NRVTSAF5100ET3G

**DATA SHEET www.onsemi.com** 

## Trench Schottky Rectifier, Very Low Leakage 

## NRVTSS5100E, NRVTSAF5100E 

## **SCHOTTKY BARRIER RECTIFIERS 5 AMPERES 100 VOLTS** 

## **Features** 

- Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage 

- Fast Switching with Exceptional Temperature Stability 

- Low Power Loss and Lower Operating Temperature 

- Higher Efficiency for Achieving Regulatory Compliance 

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SMB SMA−FL<br>CASE 403A CASE 403AA<br>STYLE 6<br>**----- End of picture text -----**<br>


- High Surge Capability 

- NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These are Pb−Free and Halide−Free Devices 

## **Typical Applications** 

- Switching Power Supplies including Wireless, Smartphone and Notebook Adapters 

- High Frequency and DC−DC Converters 

- Freewheeling and OR−ing diodes 

- Reverse Battery Protection 

## **MARKING DIAGRAMS** 

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AYWW E51<br>TE51 � AYWW �<br>�<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>� = Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


- Instrumentation 

- LED Lighting 

## **ORDERING INFORMATION** 

## **Mechanical Characteristics:** 

- Case: Epoxy, Molded 

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 

- Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. 

- Lead Finish: 100% Matte Sn (Tin) 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 

- Device Meets MSL 1 Requirements 

Publication Order Number: **NRVTSS5100E/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **March, 2023 − Rev. 4** 

**NRVTSS5100E, NRVTSAF5100E** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|100|V|
|Average Rectified Forward Current<br>(TL= 100°C)|IF(AV)|5.0|A|
|Peak Repetitive Forward Current,<br>(Square Wave, 20 kHz, TL= 83°C)|IFRM|10|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|50|A|
|Storage Temperature Range|Tstg|−65 to +175|°C|
|Operating Junction Temperature|TJ|−55 to +175|°C|
|ESD Rating (Human Body Model)||1B||
|ESD Rating (Charged Device Model)||> 1000|V|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Maximum Thermal Resistance, Steady State (Note 1)|||°C/W|
|(NRVTSAF5100E)<br>Junction−to−Lead|RθJL|25||
|Junction−to−Ambient|RθJA|90||
|(NRVTSS5100E)<br>Junction−to−Lead|RθJL|13.1||
|Junction−to−Ambient|RθJA|71.1||



1. Assumes 600 mm[2] 1 oz. copper bond pad, on a FR4 board 

## **ELECTRICAL CHARACTERISTICS** 

|**ELECTRICAL CHARACTERISTICS**|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Typ**|**Max**|**Unit**|
|Instantaneous Forward Voltage (Note 2)<br>(iF= 3.0 A, TJ= 25°C)<br>(iF= 5.0 A, TJ= 25°C)<br>(iF= 3.0 A, TJ= 125°C)<br>(iF= 5.0 A, TJ= 125°C)|vF|0.56<br>0.65<br>0.50<br>0.56|−<br>0.69<br>−<br>0.62|V|
|Reverse Current (Note 2)<br>(Rated dc Voltage, TJ= 25°C)<br>(Rated dc Voltage, TJ= 125°C)|iR|2.6<br>2.2|29<br>5|�A<br>mA|
|Diode Capacitance<br>(Rated dc Voltage, TJ= 25°C, f = 1 MHz)|Cd|54.4||pF|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

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**2** 

**NRVTSS5100E, NRVTSAF5100E** 

## **TYPICAL CHARACTERISTICS** 

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100 100<br>TA = 175 ° C TA = 150 ° C TA = 175 ° C<br>10 TA = 150 ° C TA = 25 ° C 10 TA = 125 ° C TA = 25 ° C<br>TTAA = 85 = 125 ° C ° C TA = 85 ° C<br>1 1<br>TA = −55 ° C TA = −55 ° C<br>0.1 0.1<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward<br>Characteristics Characteristics<br>1.E−01 1.E−01<br>TA = 175 ° C<br>1.E−02 TTAA = 175 = 150 °° CC 1.E−02 TTAA = 150 = 125 °° CC<br>1.E−03 TA = 125 ° C 1.E−03<br>TA = 85 ° C<br>1.E−04 TA = 85 ° C 1.E−04<br>1.E−05 1.E−05<br>TA = 25 ° C<br>1.E−06 TA = 25 ° C 1.E−06<br>1.E−07 1.E−07<br>10 20 30 40 50 60 70 80 90 100 10 20 30 40 50 60 70 80 90 100<br>VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics<br>1000 9<br>TJ = 25 ° C 8 DC<br>7<br>6<br>Square Wave<br>5<br>100<br>4<br>3<br>2<br>1 R � JL  = 13.1 ° C/W<br>10 0<br>0.1 1 10 100 0 20 40 60 80 100 120 140 160<br>VR, REVERSE VOLTAGE (V) TL, LEAD TEMPERATURE ( ° C)<br>CURRENT (A) CURRENT (A)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>iF iF<br>, INSTANTANEOUS REVERSE CURRENT (A) , INSTANTANEOUS REVERSE CURRENT (A)<br>IR IR<br>C, JUNCTION CAPACITANCE (pF) , AVERAGE FORWARD CURRENT (A)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Junction Capacitance** 

**Figure 6. Current Derating per Diode for NRVTSS5100E** 

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**3** 

**NRVTSS5100E, NRVTSAF5100E** 

## **TYPICAL CHARACTERISTICS** 

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9 18<br>8 DC R � JL = 24.4 ° C/W 16 IPK = 20/IAV IPK/IAV = 10<br>7 14<br>6 Square Wave 12<br>5 10<br>4 8 IPK/IAV = 5<br>Square Wave<br>3 6<br>2 4<br>1 2 DC<br>0 0<br>0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7<br>TL, LEAD TEMPERATURE ( ° C) IF(AV), AVERAGE FORWARD CURRENT (A)<br>Figure 7. Current Derating per Diode for Figure 8. Forward Power Dissipation<br>NRVTSAF5100E<br>1000<br>100 50% Duty Cycle<br>20%<br>10%<br>10 5%<br>2%<br>1 1%<br>0.1<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, PULSE TIME (S)<br>, AVERAGE FORWARD<br>F(AV) POWER DISSIPATION (W)<br>P<br>, AVERAGE FORWARD CURRENT (A)<br>IF(AV)<br>C/W)<br>°<br>, (<br>(t)<br>R<br>**----- End of picture text -----**<br>


**Figure 9. Transient Thermal Response, Junction−to−Ambient, for NRVTSS5100E** 

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100<br>50% Duty Cycle<br>20%<br>10 10%<br>5%<br>2%<br>1<br>1%<br>0.1<br>0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, PULSE TIME (S)<br>C/W)<br>°<br>, (<br>(t)<br>R<br>**----- End of picture text -----**<br>


**Figure 10. Transient Thermal Response, Junction−to−Ambient, for NRVTSAF5100E** 

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**4** 

**NRVTSS5100E, NRVTSAF5100E** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|NRVTSAF5100ET3G|SMA−FL<br>(Pb−Free)|5000 /<br>Tape & Reel|
|NRVTSS5100ET3G|SMB<br>(Pb−Free)|2500 /<br>Tape & Reel|
|NRVTSS5100ET3G−GA01|SMB<br>(Pb−Free)|2500 /<br>Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SMB** CASE 403A−03 ISSUE J 

DATE 19 JUL 2012 

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SCALE 1:1 SCALE 1:1<br>Polarity Band Non−Polarity Band<br>HE<br>NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>E 2. CONTROLLING DIMENSION: INCH.<br>3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 1.95 2.30 2.47 0.077 0.091 0.097<br>= b D SS A1 0.05 0.10 0.20 0.002 0.004 0.008<br>b 1.96 2.03 2.20 0.077 0.080 0.087<br>c 0.15 0.23 0.31 0.006 0.009 0.012<br>D 3.30 3.56 3.95 0.130 0.140 0.156<br>E 4.06 4.32 4.60 0.160 0.170 0.181<br>as POLARITY INDICATOROPTIONAL AS NEEDED H E 5.21 5.44 5.60 0.205 0.214 0.220<br>L 0.76 1.02 1.60 0.030 0.040 0.063<br>L1 0.51 REF 0.020 REF<br>A GENERIC<br>MARKING DIAGRAM*<br>A1<br>L L1 c<br>AYWW AYWW<br>XXXXX XXXXX<br>ae Qo (Lal.<br>SOLDERING FOOTPRINT*<br>Polarity Band Non−Polarity Band<br>2.261<br>0.089 XXXXX = Specific Device Code<br>—— A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>2.743<br>(Note: Microdot may be in either location)<br>0.108<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Lrt Pb−Free indicator, “G” or microdot “ ”, |<br>2.159 may or may not be present.<br>0.085 mm<br>SCALE 8:1<br>c— (—) inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

**DOCUMENT NUMBER: 98ASB42669B DESCRIPTION: SMB** [[_ 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 1** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2019 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SMA−FL** CASE 403AA ISSUE O 

## DATE 02 MAR 2011 

**SCALE 2:1** 

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E<br>E1<br>D<br>TOP VIEW<br>A<br>c<br>SIDE VIEW C SEATING<br>PLANE<br>2X b<br>2X L<br>BOTTOM VIEW<br>**----- End of picture text -----**<br>


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NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>MILLIMETERS<br>DIM MIN MAX<br>A 0.90 1.10<br>b 1.25 1.65<br>c 0.15 0.30<br>D 2.40 2.80<br>E 4.80 5.40<br>E1 4.00 4.60<br>L 0.70 1.10<br>RECOMMENDED<br>SOLDER FOOTPRINT*<br>**----- End of picture text -----**<br>


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5.56<br>1.76<br>1.30<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the **onsemi** Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON55210E Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SMA−FL PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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