NRVTS5100ETFSWFTAG

## NRVTS5100ETFS 

## Trench Surface Mount Schottky Rectifier 

This 8FL flat lead Trench Schottky rectifier provides fast switching performance with soft recovery in a compact thermally efficient package. Its compact footprint makes it ideally suited to portable and automotive applications where board space is at a premium. Its low profile makes it a good option for flat panel display and other applications with limited vertical clearance. The device offers low leakage over temperature making it a good match for applications requiring low quiescent current. 

## **Features** 

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## **TRENCH SCHOTTKY RECTIFIER 5.0 AMPERE 100 VOLTS** 

- Fast Soft Switching for Reduced EMI and Higher Efficiency 

- Low Profile − Maximum Height of 1.1 mm 

- Small Footprint − Footprint Area of 13.5 mm[2] 

- NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Mechanical Characteristics:** 

- Case: Molded Epoxy 

- Epoxy Meets UL 94 V−0 @ 0.125 in 

- Weight: 95 mg (Approximately) 

- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds 

- MSL 1 

## **Applications** 

- Switching Power Supplies including Mini−adapters and Displays 

- Instrumentation 

- Engine Control Recirculation Diodes 

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2}<br>1<br>WDFN8<br>( 8FL)<br>CASE 511AB<br>FLAT LEAD<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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1<br>A C<br>A T510 C<br>A AYWW C<br>NC C<br>T510 = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) 

- Freewheeling Diode Where Space is at a Premium 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NRVTS5100ETFSTAG|WDFN8<br>(Pb−Free)|1500 / Tape<br>& Reel|
|NRVTS5100ETFSWFTAG|||
|NRVTS5100ETFSTWG|WDFN8<br>(Pb−Free)|5000 / Tape<br>& Reel|
|NRVTS5100ETFSWFTWG|||



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **NRVTS5100ETFS/D** 

**1** 

© Semiconductor Components Industries, LLC, 2018 **June, 2018 − Rev. 0** 

**NRVTS5100ETFS** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|100|V|
|Average Rectified Forward Current<br>(TL= TBD°C)|IO|5.0|A|
|Peak Repetitive Forward Current<br>(Rated VR, Square Wave, 20 kHz) TL= 161°C|IFRM|5.6|A|
|Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|80|A|
|Storage Temperature Range|Tstg|−65 to +175|°C|
|Operating Junction Temperature|TJ|−65 to +175|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance, Junction−to−Tab (Note 1)|�JCT|3.3|°C/W|
|Thermal Resistance, Junction−to−Ambient (Note 1)|R�JA|50.2|°C/W|



1. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board. 

## **ELECTRICAL CHARACTERISTICS** 

|**ELECTRICAL CHARACTERISTICS**|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Typ**|**Max**|**Unit**|
|Instantaneous Forward Voltage (Note 1)<br>(iF= 5 Amps, TJ= 25°C)<br>(iF= 5 Amps, TJ= 125°C)|vF|0.95<br>0.70|1.00<br>0.80|V|
|Reverse Current (Note 1)<br>(Rated dc Voltage, TJ= 25°C)<br>(Rated dc Voltage, TJ= 125°C)|iR|1.50<br>1.29|50<br>7.5|�A<br>mA|
|Diode Capacitance<br>(Rated dc Voltage, TJ= 25°C, f = 1 MHz)|Cd|26.5||pF|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

1. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. 

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**NRVTS5100ETFS** 

## **TYPICAL CHARACTERISTICS** 

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100 100<br>TA = 175 ° C TA = 175 ° C<br>10 TA = 150 ° C 10 TA = 150 ° C<br>T A  = 125 ° C TA = 125 ° C<br>1 1<br>T T A A  = 85 = 25 ° ° C C TT AA  =  = 2585 °° CC<br>0.1 TA = −55 ° C 0.1 TA = −55 ° C<br>0.1 0.3 0.5 0.7 0.9 1.1 1.3 0.1 0.3 0.5 0.7 0.9 1.1 1.3<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)<br>Figure 1. Typical Instantaneous Forward Figure 2. Maximum Instantaneous Forward<br>Characteristics Characteristics<br>1.E−01 1.E−01<br>1.E−02 TA = 175 ° C 1.E−02 T A  = 175 ° C<br>1.E−03 T A  = 150 ° C 1.E−03 TA = 150 ° C<br>TA = 125 ° C TA = 125 ° C<br>1.E−04 1.E−04<br>1.E−05 TA = 85 ° C 1.E−05 TA = 85 ° C<br>1.E−06 T A  = 25 ° C 1.E−06 TA = 25 ° C<br>1.E−07 1.E−07<br>1.E−08 T A  = −55 ° C 1.E−08 TA = −55 ° C<br>1.E−09 1.E−09<br>1.E−10 1.E−10<br>10 20 30 40 50 60 70 80 90 100 10 20 30 40 50 60 70 80 90 100<br>VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>CURRENT (A) CURRENT (A)<br>, INSTANTANEOUS FORWARD , INSTANTANEOUS FORWARD<br>iF iF<br>, INSTANTANEOUS REVERSE CURRENT (A) , INSTANTANEOUS REVERSE CURRENT (A)<br>IR IR<br>**----- End of picture text -----**<br>


**Figure 3. Typical Reverse Characteristics** 

**Figure 4. Maximum Reverse Characteristics** 

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1000<br>TJ = 25 ° C<br>100<br>10<br>1<br>0.1 1 10 100<br>VR, REVERSE VOLTAGE (V)<br>C, JUNCTION CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Junction Capacitance** 

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10<br>R � JC = 3.3 ° C/W<br>DC<br>8<br>6 Square Wave<br>4<br>2<br>0<br>0 25 50 75 100 125 150 175<br>TC, CASE TEMPERATURE ( ° C)<br>, AVERAGE FORWARD CURRENT (A)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 6. Current Derating per Diode** 

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**NRVTS5100ETFS** 

## **TYPICAL CHARACTERISTICS** 

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7<br>IPK/IAV = 10 IPK/IAV = 5<br>6<br>5 IPK/IAV = 20<br>DC<br>4<br>3<br>Square Wave<br>2<br>1<br>0<br>0 1 2 3 4 5 6 7<br>IF(AV), AVERAGE FORWARD CURRENT (A)<br>Figure 7. Forward Power Dissipation<br>100<br>50% Duty Cycle<br>20%<br>10<br>10%<br>5%<br>2%<br>1 1%<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>, AVERAGE FORWARD<br>F(AV) POWER DISSIPATION (W)<br>P<br>C/W)<br>°<br> (<br>JA<br>�<br>R<br>**----- End of picture text -----**<br>


**Figure 8. Thermal Characteristics** 

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**NRVTS5100ETFS** 

## **PACKAGE DIMENSIONS** 

**WDFN8 3.3x3.3, 0.65P** CASE 511AB ISSUE D 

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2X<br>o 0.20 l C NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH<br>L au s B 2X PROTRUSIONS OR GATE BURRS.<br>D1<br>8 7 6 5 0.20 C DIM MINMILLIMETERSNOM MAX MIN INCHESNOM MAX<br>A 0.70 0.75 0.80 0.028 0.030 0.031<br>4X A1 0.00 −−− 0.05 0.000 −−− 0.002<br>coo E1 E n ee b 0.23 0.30 0.40 0.009 0.012 0.016<br>c 0.15 0.20 0.25 0.006 0.008 0.010<br>D 3.30 BSC 0.130 BSC<br>1 2 3 4 c D1 2.95 3.05 3.15 0.116 0.120 0.124<br>— = A1 ====—= D2 1.98 2.11 2.24 0.078 0.083 0.088<br>TOP VIEW E 3.30 BSC 0.130 BSC<br>E1 2.95 3.05 3.15 0.116 0.120 0.124<br>0.10 C E2 1.47 1.60 1.73 0.058 0.063 0.068<br>ee === E3 0.23 0.30 0.40 0.009 0.012 0.016<br>A 6X C Ge 0.30 0.65 BSC0.41 0.51 0.012 0.026 BSC0.016 0.020<br>o 0.10 C r <i: e SEATINGPLANE === K 0.65 0.80 0.95 0.026 0.032 0.037<br>L 0.30 0.43 0.56 0.012 0.017 0.022<br>SIDE VIEW DETAIL A DETAIL A L1 0.06 0.13 0.20 0.002 0.005 0.008<br>. -=====— M 1.40 1.50 1.60 0.055 0.059 0.063<br>. 0  −−− 12  0  −−− 12<br>8X b<br>0.10 C A B<br>SOLDERING FOOTPRINT*<br>0.05 C<br>8X<br>4X L e/2 0.42 0.65 4X<br>eT 1 4 PITCH 0.66<br>PACKAGE<br>K OUTLINE<br>t l e, — Tae<br>E2 a e Sete<br>E3 M<br>8 E 5 e L1 | 3.60<br>G D2<br>BOTTOM VIEW 0.75 0.57 2.30<br>0.47 2.37<br>3.46<br>DIMENSION: MILLIMETERS<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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