Image not available
Illustrative purposes only
NP75N04YLG-E1-AY
Power MOSFET, N Channel, 40 V, 75 A, 4800 µohm, HSON, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: RENESAS
- Product type:
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: NP75N04YLG Series
- Qualification: AEC-Q101
- Power Dissipation: 138W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: HSON
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 75A
- Drain Source On State Resistance: 4800µohm
- Gate Source Threshold Voltage Max: 2.5V
| Delivery and price | |
|---|---|
| Units per pack | 2500 |
| Price | 0.682 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
Preliminary Data Sheet ## **NP75N04YLG** 40 V – 75 A – N-channel Power MOS FET A lication: Automotive pp R07DS1247EJ0100 Rev.1.00 Mar 02, 2015 ## **Description** The NP75N04YLG is N-channel MOS Field Effect Transistors designed for high current switching applications. ## **Features** - Super low on-state resistance - RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 38 A) - RDS(on) = 8.3 mΩ MAX. (VGS = 4.5 V, ID = 38 A) - Logic level drive type - Gate to Source ESD protection diode built in - Designed for automotive application and AEC-Q101 qualified ## **Ordering Information** |**Part No.**|**Lead Plating**|**Packing**|**Packing**|**Package **| |---|---|---|---|---| |NP75N04YLG-E1-AY*1|Pure Sn (Tin)|Tape 2500 p/reel|Taping (E1 type)|8-pin HSON| |NP75N04YLG-E2-AY*1|||Taping (E2 type)|| Note: * 1 Pb-free (This product does not contain Pb in the external electrode) ## **Absolute Maximum Ratings** (TA = 25°C) |**Item**|**Symbol**|**Ratings **|**Unit**| |---|---|---|---| |Drain to Source Voltage(VGS= 0 V)|VDSS|40|V| |Gate to Source Voltage(VDS= 0 V)|VGSS|±20|V| |Drain Current(DC) (TC= 25°C)|ID(DC)|±75|A| |Drain Current(pulse) *1|ID(pulse)|±225|A| |Total Power Dissipation(TC= 25°C)|PT1|138|W| |Total Power Dissipation(TA= 25°C) *2|PT2|1.0|W| |Channel Temperature|Tch|175|°C| |Storage Temperature|Tstg|–55 to +175|°C| |Repetitive Avalanche Current*3|IAR|35|A| |Repetitive Avalanche Energy *3|EAR|123|mJ| Notes: * 1 TC = 25°C, PW ≤ 10 μ s, Duty Cycle ≤ 1% - 2 Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt with 4% Copper area (35 μ m) - 3 Tch(peak) ≤ 150°C, RG = 25 Ω ## **Thermal Resistance** Channel to Case Thermal Resistance Rth(ch-C) 1.09 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 150 °C/W R07DS1247EJ0100 Rev.1.00 Mar 02, 2015 Page 1 of 6 **NP75N04YLG** **Preliminary** ## **Electrical Characteristics** (TA = 25°C) |**Item**|**Symbol**|**MIN.**|**TYP.**|**MAX.**|**Unit**|**Test Conditions**| |---|---|---|---|---|---|---| |Zero Gate Voltage Drain Current|IDSS|—|—|1|μA|VDS= 40 V, VGS= 0 V| |Gate Leakage Current|IGSS|—|—|±10|μA|VGS=±20 V, VDS= 0 V| |Gate to Source Threshold Voltage|VGS(th)|1.5|2.0|2.5|V|VDS= VGS, ID= 250μA| |Forward Transfer Admittance*1|| yfs ||40|46|—|S|VDS= 5 V, ID= 38 A| |Drain to Source On-state Resistance*1|RDS(on)|—|3.8|4.8|mΩ|VGS= 10 V, ID= 38 A| |||—|4.5|8.3|mΩ|VGS= 4.5 V, ID= 38 A| |Input Capacitance|Ciss|—|4300|6450|pF|VDS= 25 V<br>VGS= 0 V<br>f = 1 MHz| |Output Capacitance|Coss|—|400|600|pF|| |Reverse Transfer Capacitance|Crss|—|250|450|pF|| |Turn-on DelayTime|td(on)|—|22|44|ns|VDD= 20 V, ID= 38 A<br>VGS= 10 V<br>RG= 0Ω| |Rise Time|tr|—|17|41|ns|| |Turn-off DelayTime|td(off)|—|40|140|ns|| |Fall Time|tf|—|11|27|ns|| |Total Gate Charge|QG|—|77|116|nC|VDD= 32 V<br>VGS= 10 V<br>ID= 75 A| |Gate to Source Charge|QGS|—|20|—|nC|| |Gate to Drain Charge|QGD|—|25|—|nC|| |BodyDiode Forward Voltage*1|VF(S-D)|—|0.9|1.5|V|IF= 75 A, VGS= 0 V| |Reverse RecoveryTime|trr|—|34|—|ns|IF= 75 A, VGS= 0 V<br>di/dt = 100 A/μs| |Reverse RecoveryCharge|Qrr|—|34|—|nC|| Note: * 1 Pulsed test ## **TEST CIRCUIT 1 AVALANCHE CAPABILITY** ## **TEST CIRCUIT 2 SWITCHING TIME** **==> picture [164 x 137] intentionally omitted <==** **----- Start of picture text -----**<br> D.U.T.<br>RG = 25 Ω L<br>PG.<br>50 Ω VDD<br>VGS = 20 → 0 V<br>BVDSS<br>ID IAS VDS<br>VDD<br>Starting Tch<br>**----- End of picture text -----**<br> **==> picture [274 x 132] intentionally omitted <==** **----- Start of picture text -----**<br> D.U.T.<br>VGS<br>PG. RG RL Wave FormVGS 0 10% VGS 90%<br>VDD<br>VDS<br>90% 90%<br>VGS VDS<br>0 VDS 0 1 0% 10%<br>Wave Form<br>τ td(on) tr td(off) tf<br>τ = 1 μs ton toff<br>Duty Cycle ≤ 1%<br>**----- End of picture text -----**<br> ## **TEST CIRCUIT 3 GATE CHARGE** **==> picture [123 x 57] intentionally omitted <==** **----- Start of picture text -----**<br> D.U.T.<br>IG = 2 mA RL<br>PG.<br>50 Ω VDD<br>**----- End of picture text -----**<br> R07DS1247EJ0100 Rev.1.00 Mar 02, 2015 Page 2 of 6 **NP75N04YLG** **Preliminary** ## **Typical Characteristics** (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA **==> picture [200 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 25 50 75 100 125 150 175<br>TC - Case Temperature - °C<br>dT - Percentage of Rated Power - %<br>**----- End of picture text -----**<br> TOTAL POWER DISSIPATION vs. CASE TEMPERATURE **==> picture [200 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 25 50 75 100 125 150 175<br>TC - Case Temperature - °C<br> - Total Power Disslpation - W<br>T<br>P<br>**----- End of picture text -----**<br> FORWARD BIAS SAFE OPERATING AREA **==> picture [200 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>ID(Pulse) = 225 A<br>RDS(ON) Limited<br>100 (V GS =10 V)<br>10 Power Dissipation Limited<br>Secondary Breakdown Limited<br>1<br>TC = 25 ° C<br>Single Pulse<br>0.1<br>0.1 1 10 100<br>VDS - Drain to Source Voltage - V<br>PW = 100<br>μs<br>PW = 1 ms<br>PW = 10 ms<br> - Drain Current - A<br>ID<br>**----- End of picture text -----**<br> TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH **==> picture [330 x 204] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>R = 150°C/W<br>th(ch-A)<br>100<br>10<br>R = 1.09°C/W<br>th(ch-C)<br>1<br>0.1<br>Single pulse<br>Mounted on glass epoxy substrate of 40 mm × 40 mm × 1.6 mmt<br>with 4% copper area (35 μ m)<br>0.01<br>100 μ 1 m 10 m 100 m 1 10 100 1000<br>PW - Pulse Width - s<br> - Transient Thermal Resistance - °C/W<br>th(t)<br>R<br>**----- End of picture text -----**<br> R07DS1247EJ0100 Rev.1.00 Mar 02, 2015 Page 3 of 6 **NP75N04YLG** **Preliminary** DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE **==> picture [198 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>200<br>150<br>100<br>50<br>VGS = 10 V<br>Pulsed<br>0<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>VDS - Drain to Source Voltage - V<br> - Drain Current - A<br>ID<br>**----- End of picture text -----**<br> GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE **==> picture [199 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>2<br>1<br>V DS = V GS<br>ID = 250 μA<br>0<br>–100 –50 0 50 100 150 200<br>Tch - Channel Temperature - °C<br> - Gate to Source Threshold Voltage - V<br>GS(th)<br>V<br>**----- End of picture text -----**<br> **==> picture [206 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> DRAIN TO SOURCE ON-STATE RESISTANCE vs.<br>DRAIN CURRENT<br>10<br>9<br>8<br>7<br>VGS = 10V<br>6 4.5V<br>5<br>4<br>3<br>2<br>1<br>Pulsed<br>0<br>1 10 100 1000<br>ID - Drain Current - A<br>Ω<br> - Drain to Source On-State Resistance - m<br>DS(on)<br>R<br>**----- End of picture text -----**<br> ## FORWARD TRANSFER CHARACTERISTICS **==> picture [199 x 387] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>TA = –55 ° C<br>10 –25 ° C<br>25°C<br>75°C<br>1 125 175 ° ° C C<br>0.1<br>0.01<br>VDS = 10 V<br>Pulsed<br>0.001<br>0 1 2 3 4 5<br>VGS - Gate to Source Voltage - V<br>FORWARD TRANSFER ADMITTANCE vs.<br>DRAIN CURRENT<br>100<br>T A = –55°C<br>–25°C<br>25°C<br>75°C<br>125°C<br>175°C<br>10<br>V DS = 5 V<br>Pulsed<br>1<br>0.1 1 10 100<br>ID - Drain Current - A<br> - Drain Curent - A<br>ID<br>| - Forward Transfer Admittance - S<br>fs<br>|y<br>**----- End of picture text -----**<br> DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE **==> picture [197 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> GATE TO SOURCE VOLTAGE<br>10<br>9<br>8 ID = 15A38A<br>75A<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>Pulsed<br>0<br>0 5 10 15 20<br>VGS - Gate to Source Voltage - V<br>Ω<br> - Drain to Source On-State Resistance - m<br>DS(on)<br>R<br>**----- End of picture text -----**<br> R07DS1247EJ0100 Rev.1.00 Mar 02, 2015 Page 4 of 6 **NP75N04YLG** **Preliminary** DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE **==> picture [200 x 625] intentionally omitted <==** **----- Start of picture text -----**<br> CHANNEL TEMPERATURE<br>10<br>9<br>8 VGS = 10V<br>4.5V<br>7<br>6<br>5<br>4<br>3<br>2<br>1 ID = 38 A<br>Pulsed<br>0<br>–100 –50 0 50 100 150 200<br>Tch - Channel Temperature - °C<br>SWITCHING CHARACTERISTICS<br>1000<br>100 td(off)<br>tr t d(on)<br>10<br>VDD = 20 V t f<br>V GS = 10 V<br>R G = 0 Ω<br>1<br>0.1 1 10 100<br>ID - Drain Current - A<br>SOURCE TO DRAIN DIODE FORWARD VOLTAGE<br>1000<br>VGS = 10 V<br>100<br>VGS = 0 V<br>10<br>1<br>Pulsed<br>0.1<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>VF(S-D) - Source to Drain Voltage - V<br>Ω<br> - Drain to Source On-State Resistance - m<br>DS(on)<br>R<br> - Switching Time - ns, tf<br>d(off)<br>, t, tr<br>td(on)<br> - Diode Forward Current - A<br>IF<br>**----- End of picture text -----**<br> SOURCE TO DRAIN DIODE FORWARD VOLTAGE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE **==> picture [199 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>Ciss<br>1000<br>C oss<br>V GS = 0 V Crss<br>f = 1 MHz<br>100<br>0.01 0.1 1 10 100<br>VDS - Drain to Source Voltage - V<br> - Capacitance -pF<br>rss<br>, C<br>oss<br>, C<br>iss<br>C<br>**----- End of picture text -----**<br> DYNAMIC INPUT/OUTPUT CHARACTERISTICS **==> picture [225 x 387] intentionally omitted <==** **----- Start of picture text -----**<br> 35 14<br>30 12<br>VDD = 32 V<br>25 20 V 10<br>8 V<br>20 8<br>15 6<br>10 4<br>VGS<br>5 V DS 2<br>ID = 75 A<br>0 0<br>0 10 20 30 40 50 60 70 80<br>QG- Gate Charge - nC<br>REVERSE RECOVERY TIME vs.<br>DRAIN CURRENT<br>100<br>10<br>di/dt = 100 A/μs<br>VGS = 0 V<br>1<br>0.1 1 10 100<br>IF - Drain Current - A<br> - Drain to Source Voltage - V - Gate to Source Voltage - V<br>DS GS<br>V V<br> - Reverse Recovery Time - ns<br>trr<br>**----- End of picture text -----**<br> R07DS1247EJ0100 Rev.1.00 Mar 02, 2015 Page 5 of 6 **NP75N04YLG** **Preliminary** ## **Package Drawing** (Unit: mm) ## **8-pin HSON (Mass: 0.128 g TYP.)** ## Renesas Code: PLSN0008KA-A **==> picture [70 x 30] intentionally omitted <==** **----- Start of picture text -----**<br> 1, 2, 3 : Source<br>4 : Gate<br>5, 6, 7, 8 : Drain<br>**----- End of picture text -----**<br> ## **Equivalent Circuit** **==> picture [103 x 94] intentionally omitted <==** **----- Start of picture text -----**<br> Drain<br>Body<br>Gate Diode<br>Gate<br>Protection<br>Source<br>Diode<br>**----- End of picture text -----**<br> Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. R07DS1247EJ0100 Rev.1.00 Mar 02, 2015 Page 6 of 6 |**Revision History**|**Revision History**|**Revision History**||**NP75N04YLG Data Sheet**| |---|---|---|---|---| |||||| |**Rev.**|**Date**|||**Description**| |||**Page **||**Summary**| |1.00|Mar 02, 2015|—||First Edition Issued| All trademarks and registered trademarks are the property of their respective owners. C - 1 **==> picture [430 x 357] intentionally omitted <==** **----- Start of picture text -----**<br> Notice<br>1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for<br>the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the<br>use of these circuits, software, or information.<br>2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics<br>assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.<br>3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or<br>technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or<br>others.<br>4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or<br>third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product.<br>5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on<br>the product's quality grade, as indicated below.<br>"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic<br>equipment; and industrial robots etc.<br>"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc.<br>Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical<br>implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it<br>in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses<br>incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics.<br>6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage<br>range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the<br>use of Renesas Electronics products beyond such specified ranges.<br>7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and<br>malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the<br>possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to<br>redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,<br>please evaluate the safety of the final products or systems manufactured by you.<br>8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics<br>products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes<br>no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.<br>9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or<br>regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the<br>development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and<br>regulations and follow the procedures required by such laws and regulations.<br>10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the<br>contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics<br>products.<br>11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.<br>12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.<br>(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.<br>(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.<br>**----- End of picture text -----**<br> ## **SALES OFFICES** http://www.renesas.com Refer to "http://www.renesas.com/" for the latest and detailed information. **Renesas Electronics America Inc.** 2801 Scott Boulevard Santa Clara, CA 95050-2549, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 **Renesas Electronics Canada Limited** 9251 Yonge Street, Suite 8309 Richmond Hill, Ontario Canada L4C 9T3 Tel: +1-905-237-2004 **Renesas Electronics Europe Limited** Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 **Renesas Electronics Europe GmbH** Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-6503-0, Fax: +49-211-6503-1327 **Renesas Electronics (China) Co., Ltd.** Room 1709, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100191, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 **Renesas Electronics (Shanghai) Co., Ltd.** Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, P. R. China 200333 Tel: +86-21-2226-0888, Fax: +86-21-2226-0999 **Renesas Electronics Hong Kong Limited** Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2265-6688, Fax: +852 2886-9022 **Renesas Electronics Taiwan Co., Ltd.** 13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 **Renesas Electronics Singapore Pte. Ltd.** 80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 **Renesas Electronics Malaysia Sdn.Bhd.** Unit 1207, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 **Renesas Electronics India Pvt. Ltd.** No.777C, 100 Feet Road, HAL II Stage, Indiranagar, Bangalore, India Tel: +91-80-67208700, Fax: +91-80-67208777 **Renesas Electronics Korea Co., Ltd.** 12F., 234 Teheran-ro, Gangnam-Gu, Seoul, 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2015 Renesas Electronics Corporation. All rights reserved. Colophon 5.0
Updated at March 31, 2026
Renesas Electronics is a premier global supplier of advanced semiconductor solutions, driving innovation across automotive, industrial, infrastructure, and Internet of Things (IoT) applications. Recognized for a comprehensive portfolio that spans the entire signal chain, Renesas empowers engineers to design secure, intelligent, and highly efficient embedded systems for a rapidly evolving technological landscape. Our selection of Renesas components features a strong emphasis on precision timing and frequency management solutions. We offer a robust range of standard oscillators, timers, and pulse generators engineered to deliver exceptional accuracy and stability. These reliable clocking devices are essential for synchronizing complex digital operations and ensuring optimal performance in demanding circuit designs. In addition to timing components, our inventory includes essential discrete semiconductors and interface solutions. This encompasses high-performance single MOSFETs and bipolar transistors for efficient power routing, alongside versatile I/O expanders that simplify system connectivity. To support modern wireless integration, we also provide select Renesas RF transceivers, WLAN adaptors, and Bluetooth modules, equipping developers with the critical building blocks needed for advanced communication systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →