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MRF6S20010GNR1
RF FET Transistor, 68 V, 2.2 GHz, 1.6 GHz, TO-270G
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: NXP
- Product type: RF FETs
- Channel Type: N Channel
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-270G
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 37.83 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Freescale Semiconductor**
Document Number: MRF6S20010N Rev. 4, 1/2014
Technical Data
## **RF Power Field Effect Transistors**
## N--Channel Enhancement--Mode Lateral MOSFETs
Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications.
- Typical Two--Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEP Power Gain — 15.5 dB Drain Efficiency — 36% IMD — --34 dBc
- Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band (2130--2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 8.5 dB @ 0.01% Probability Power Gain — 15.5 dB
## **MRF6S20010NR1 MRF6S20010GNR1**
**1600--2200 MHz, 10 W, 28 V GSM, GSM EDGE SINGLE N--CDMA 2 x W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs**
Drain Efficiency — 15%
- IM3 @ 10 MHz Offset — --47 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — --49 dBc in 3.84 MHz Channel Bandwidth
- Typical Single--Carrier N--CDMA Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., Full Frequency Band (1930--1990 MHz), IS--95 (Pilot, Sync, Paging, Traffic Codes 8 through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB
Drain Efficiency — 16%
ACPR @ 885 kHz Offset = --60 dBc in 30 kHz Bandwidth
- Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 130 mA, Pout = 4 Watts Avg., Full Frequency Band (1805--1880 MHz) Power Gain — 16 dB Drain Efficiency — 33% EVM — 1.3% rms
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TO--270--2<br>PLASTIC<br>MRF6S20010NR1<br>TO--270G--2<br>PLASTIC<br>MRF6S20010GNR1<br>**----- End of picture text -----**<br>
- Capable of Handling 5:1 VSWR, @ 28 Vdc, 2000 MHz, 10 Watts CW Output Power
## **Features**
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- 225C Capable Plastic Package
- In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.
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RFin/VGS 2 1 RFout/VDS<br>HH H<br>(Top View)<br>Note: The backside of the package is the<br>source terminal for the transistor.<br>**----- End of picture text -----**<br>
**Figure 1. Pin Connections**
**Table 1. Maximum Ratings**
|**Table 1. Maximum Ratings**||**Figure 1. Pin Connections**|**Figure 1. Pin Connections**|
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Drain--Source Voltage|VDSS|--0.5, +68|Vdc|
|Gate--Source Voltage|VGS|--0.5, +12|Vdc|
|Storage Temperature Range|Tstg|--65 to +150|C|
|Case Operating Temperature|TC|150|C|
|Operating Junction Temperature **(1,2)**|TJ|225|C|
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Freescale Semiconductor, Inc., 2005--2006, 2008--2009, 2014. All rights reserved.
RF Device Data Freescale Semiconductor
1
**Table 2. Thermal Characteristics**
**Characteristic Symbol Value[(1,2)] Unit** Thermal Resistance, Junction to Case RJC C/W Case Temperature 78C, 1 W CW 2.3 Case Temperature 79C, 10 W PEP, Two--Tone Test 2.9 ~~a~~ **Table 3. ESD Protection Characteristics Test Methodology Class** Human Body Model (per JESD22--A114) 1A Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV **Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit** Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C ~~——s~~ **Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted) **Characteristic Symbol Min Typ Max Unit Off Characteristics** Zero Gate Voltage Drain Leakage Current IDSS — — 10 Adc (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current IDSS — — 1 Adc (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current IGSS — — 500 Adc (VGS = 5 Vdc, VDS = 0 Vdc) ~~—~~ **On Characteristics** Gate Threshold Voltage VGS(th) 1.5 2.2 3.5 Vdc (VDS = 10 Vdc, ID = 40 Adc) Gate Quiescent Voltage VGS(Q) 2 2.8 4 Vdc (VDD = 28 Vdc, ID = 130 mAdc, Measured in Functional Test) Drain--Source On--Voltage VDS(on) — 0.33 0.4 Vdc (VGS = 10 Vdc, ID = 0.4 Adc) ~~—~~ **Dynamic Characteristics[(3)]** Output Capacitance Coss — 20 — pF (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance Crss — 11.6 — pF (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance Ciss — 120 — pF (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) ~~EE~~ **Functional Tests[(4)]** (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 10 W PEP, f1 = 2170 MHz, f2 = 2170.1 MHz, Two--Tone Test Power Gain Gps 14 15.5 17 dB Drain Efficiency D 33 36 — % Intermodulation Distortion IMD — --34 --28 dBc Input Return Loss IRL — --15 --9 dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access ~~—a~~ MTTF calculators by product. ~~a~~ 2. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
3. Part internally matched on input.
4. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts.
(continued)
**MRF6S20010NR1 MRF6S20010GNR1**
RF Device Data Freescale Semiconductor
2
**Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted) **(continued)**
**Characteristic Symbol Min Typ Max Unit Typical 2--Carrier W--CDMA Performances** (In Freescale CDMA Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps — 15.5 — dB Drain Efficiency D — 15 — % Gain Flatness in 30 MHz Bandwidth @ Pout = 1 W CW GF — 0.3 — dB Intermodulation Distortion IM3 — --47 — dBc Adjacent Channel Power Ratio ACPR — --49 — dBc ~~=~~ **Typical N--CDMA Performances** (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg., 1930 MHz<Frequency<1990 MHz, Single--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Gps — 15.5 — dB Drain Efficiency D — 16 — % Gain Flatness in 30 MHz Bandwidth @ Pout = 1 W CW GF — 0.3 — dB Adjacent Channel Power Ratio ACPR — --60 — dBc ~~reas~~ **Typical GSM EDGE Performances** (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 130 mA, Pout = 4 W Avg., 1805--1880 MHz, EDGE Modulation Power Gain Gps — 16 — dB Drain Efficiency D — 33 — % Gain Flatness in 30 MHz Bandwidth @ Pout = 4 W CW GF — 0.3 — dB Error Vector Magnitude EVM — 1.3 — % rms Spectral Regrowth at 400 kHz Offset SR1 — --60 — dBc Spectral Regrowth at 600 kHz Offset SR2 — --70 — dBc ~~enneee~~
**MRF6S20010NR1 MRF6S20010GNR1**
RF Device Data Freescale Semiconductor
3
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R1<br>VBIAS VSUPPLY<br>+<br>R2 Z9<br>C11 C1 C7 C3 C4 C5<br>Z16<br>R3<br>Z10<br>RF RF<br>INPUT OUTPUT<br>Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z11 Z12 Z13 Z14 Z15<br>C2 C6<br>DUT<br>Z17<br>IT] C8 C9 C10<br>Z1, Z15 0.066 x 0.480 Microstrip Z10 0.930 x 0.350 Microstrip<br>Z2 0.066 x 0.765 Microstrip Z11 0.930 x 0.400 Microstrip<br>Z3, Z5 0.066 x 0.340 x 0.050 Taper Z12 0.050 x 0.105 Microstrip<br>Z4 0.340 x 0.295 Microstrip Z13 0.405 x 0.242 Microstrip<br>Z6 0.020 x 0.060 Microstrip Z14 0.066 x 0.740 Microstrip<br>Z7 0.0905 x 0.280 Microstrip Z16, Z17 0.050 x 1.250 Microstrip<br>Z8 0.0905 x 0.330 Microstrip PCB Taconic RF--35, 0.030, r = 3.5<br>Z9 0.050 x 0.980 Microstrip<br>**----- End of picture text -----**<br>
**Figure 2. MRF6S20010NR1 Test Circuit Schematic — 2110--2170 MHz**
**Table 6. MRF6S20010NR1 Test Circuit Component Designations and Values — 2110--2170 MHz**
|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|C1|100 nF Chip Capacitor|CDR33BX104AKYS|Kemet|
|C2, C6|4.7 pF Chip Capacitors|ATC100B4R7CT500XT|ATC|
|C3, C7, C8|9.1 pF Chip Capacitors|ATC100B9R1CT500XT|ATC|
|C4, C5, C9, C10|10F, 50 V Chip Capacitors|GRM55DR61H106KA88B|Murata|
|C11|10F, 35 V Tantalum Chip Capacitor|T490D106K035AT|Kemet|
|R1|1 k, 1/4 W Chip Resistor|CRCW12061001FKEA|Vishay|
|R2|10 k, 1/4 W Chip Resistor|CRCW12061002FKEA|Vishay|
|R3|10, 1/4 W ChipResistor|CRCW120610R0FKEA|Vishay|
**MRF6S20010NR1 MRF6S20010GNR1**
RF Device Data Freescale Semiconductor
4
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R2 C1<br>fe) C3 fe} o O°<br>C11<br>(TT) G E rl coGag 0 0 CO CCC P CCPH POPC COCO CCC OC BP CO C4 C5 5 (OO<br>i |_| —— ||, 0<br>R1 C7 | o°<br>R3<br>- ° i ° ood °<br>0o00000oo oe O Ofe) = o @ ) oOoO00000 G o<br>C2 C6<br>: _ _<br>0000000000 fe) 0000000 Oo<br>@ °O ® —— —©<br>5<br>© oof i b fe)<br>5 n ——— C9 C10 — 5 (O<br>o©0000000005° 000000000000° C8 000° oo °°O<br>[e) MRF6S20010N, Rev. 2<br>CUT OUT AREA<br>**----- End of picture text -----**<br>
**Figure 3. MRF6S20010NR1 Test Circuit Component Layout — 2110--2170 MHz**
**MRF6S20010NR1 MRF6S20010GNR1**
RF Device Data Freescale Semiconductor
5
## **TYPICAL CHARACTERISTICS — 2110--2170 MHz**
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--5<br>40<br>D<br>Pett --10<br>36<br>IRL --15<br>32 po<br>ee e e --20<br>28 VDD = 28 Vdc, Pout = 10 W (PEP)<br>IDQ = 130 mA, 100 kHz Tone Spacing | --25<br>24 a ee ee ee ffee --30<br>20 sean IMD ===<br>= See Seoo = --35<br>16 Gps<br>es<br>a eee --40<br>2050 2090 2130 2170 2210<br>f, FREQUENCY (MHz)<br>Figure 4. Two--Tone Wideband Performance<br>@ Pout = 10 Watts (PEP)<br>18 --10<br>17 IDQ = 195 mA VTwo--Tone MeasurementsDD = 28 Vdc, f = 2170 MHz<br>TE TI ins<br>--20 100 kHz Tone Spacing<br>16 162.5 mA<br>130 mA --30 IDQ = 65 mA<br>15<br>195 mA<br>97.5 mA<br>14<br>--40<br>SSN ee<br>13 | 65 mA<br>162.5 mA<br>VDD = 28 Vdc, f = 2170 MHz --50<br>12 iT Two--Tone Measurements II pay 97.5 mA 130 mA ine<br>100 kHz Tone Spacing<br>11 aii ons Sti --60 CA goll<br>0.1 1 10 30 0.1 1 10 30<br>Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP<br>Figure 5. Two--Tone Power Gain versus Figure 6. Third Order Intermodulation<br>Output Power Distortion versus Output Power<br>--10 --20<br>VDD = 28 Vdc, IDQ = 130 mA<br>--20 f1 = 2170 MHz, f2 = 2170.1 MHz 3rd Order<br>Two--Tone Measurements 3rd Order --30<br>a TE NL<br>--30<br>--40 VDD = 28 Vdc, P F out = 10 W (PEP) i r<br>IDQ = 130 mA, Two--Tone Measurements<br>--40 (f1 + f2)/2 = Center Frequency of 2170 MHz<br>--50<br>--50 P|0>nt sad 7th Order =a TTTT=< Fhval<br>5th Order 5th Order<br>--60 eer --60<br>7th Order<br>--70 TT | --70 ESlM CLANM| LI<br>0.1 1 10 30 0.1 1 10 100<br>Pout, OUTPUT POWER (WATTS) PEP TWO--TONE SPACING (MHz)<br>Figure 7. Intermodulation Distortion Products Figure 8. Intermodulation Distortion Products<br>versus Output Power versus Tone Spacing<br>, POWER GAIN (dB)<br>ps<br>IRL, INPUT RETURN LOSS (dB)<br>IMD, INTERMODULATION DISTORTION (dBc)<br>, DRAIN EFFICIENCY (%), G<br>D<br><br>, POWER GAIN (dB)<br>ps IMD, THIRD ORDER<br>G<br>INTERMODULATION DISTORTION (dBc)<br>IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc)<br>**----- End of picture text -----**<br>
**MRF6S20010NR1 MRF6S20010GNR1**
RF Device Data Freescale Semiconductor
6
## **TYPICAL CHARACTERISTICS — 2110--2170 MHz**
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18 70<br>47 eee<br>P3dB = 41.5 dBm (14.2 W) Ideal 17 T C = --30 _ C Gps --30 _ C 60<br>45 16 25 _ C 25 _ C 50<br>Fees osterae ) LA EI ip<br>43 P1dB = 40.9 dBm (12.26 W) 15 85 _ C 85 _ C 40<br>41 aHew eS Actual 14 LITT| 30<br>ee a eA<br>VDD = 28 Vdc D<br>39 a 13 IDQ = 130 mA > 20<br>| | Le VDD = 28 Vdc, IDQ = 130 mA f = 2170 MHz CHCAAAA<br>37 Pulsed CW, 8 sec(on), 1 msec(off) 12 10<br>f = 2170 MHz<br>35 peeAn 11 tT ee a | ETT 0<br>20 22 24 26 28 30 0.1 1 10 30<br>Pin, INPUT POWER (dBm) Pout, OUTPUT POWER (WATTS) CW<br>Figure 9. Pulsed CW Output Power versus Figure 10. Power Gain and Drain Efficiency<br>Input Power versus CW Output Power<br>16 27 6<br>VDD = 28 Vdc<br>18 Pout = 10 W (PEP) S21 3<br>15<br>IDQ = 130 mA<br>SSS ee 9 PE LE 0<br>14 PN NAL OK aN<br>0 --3<br>13 PINAR PSA H E<br>32 V --9 --6<br>28 V<br>12 VDD = 24 V<br>--18 --9<br>11 IDQ = 130 mA --27 S11 --12<br>f = 2170 MHz<br>10 i --36 po AN --15<br>ee ee<br>0 3 6 9 12 15 18 21 400 800 1200 1600 2000 2400 2800 3200<br>Pout, OUTPUT POWER (WATTS) CW f, FREQUENCY (MHz)<br>, POWER GAIN (dB)<br>, OUTPUT POWER (dBm)out Gps DRAIN EFFICIENCY (%)D<br>P<br>S21 (dB) S11 (dB)<br>, POWER GAIN (dB)<br>ps<br>G<br>**----- End of picture text -----**<br>
**Figure 11. Power Gain versus Output Power**
**Figure 12. Broadband Frequency Response**
**MRF6S20010NR1 MRF6S20010GNR1**
RF Device Data Freescale Semiconductor
7
## **W--CDMA TYPICAL CHARACTERISTICS — 2110--2170 MHz**
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16 18<br>15.8 | [|petit| | | | 17<br>15.6 16<br>Gps<br>15.4 pL 15<br>VDD = 28 Vdc, Pout = 1 W (Avg.), IDQ = 130 mA D<br>15.2 2--Carrier W--CDMA, 10 MHz Carrier Spacing | 14<br>3.84 MHz Channel Bandwidth, PAR = 8.5 dB<br>15 @ 0.01% Probability (CCDF) | [|] --45 --10<br>14.8 — | [|] --47 --12<br>14.6 IM3 --49<br>--14<br>14.4 ACPR --51<br>--16<br>14.2 Pot | --53<br>IRL<br>14 a ee ee ee --55 --18<br>2060 2080 2100 2120 2140 2160 2180 2200 2220<br>f, FREQUENCY (MHz)<br>Figure 13. 2--Carrier W--CDMA Broadband Performance<br>@ Pout = 1 Watt Avg.<br>49 --20<br>VDD = 28 Vdc, IDQ = 130 mA<br>42 f1 = 2165 MHz, f2 = 2175 MHz LI --25<br>2--Carrier W--CDMA, 10 MHz Carrier<br>Spacing, 3.84 MHz Channel<br>35 Bandwidth, PAR = 8.5 dB Alm --30<br>@ 0.01% Probability (CCDF)<br>28 w/a --35<br>D<br>21 --40<br>Gps TC = 25 _ C<br>Spo n<br>14 --45<br>IM3<br>ACPR<br>ea<br>7 --50<br>Pe<br>0 TU M --55<br>| ET<br>0.1 1 10 20<br>Pout, OUTPUT POWER (WATTS) AVG.<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>IM3 (dBc), ACPR (dBc)<br>IRL, INPUT RETURN LOSS (dB)<br>, POWER GAIN (dB)<br>ps<br>IM3 (dBc), ACPR (dBc)<br>, DRAIN EFFICIENCY (%), G<br>D<br><br>**----- End of picture text -----**<br>
**Figure 14. 2--Carrier W--CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power**
**MRF6S20010NR1 MRF6S20010GNR1**
RF Device Data Freescale Semiconductor
8
## **W--CDMA TEST SIGNAL**
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100 +20<br>3.84 MHz<br>10 ee— ff] eee +30 eee Channel BW<br>0<br>1 PS --10 eee<br>--20<br>0.1 XL --30 ce<br>W--CDMA. ACPR Measured in 3.84 MHz Channel<br>Bandwidth @ 5 MHz Offset. IM3 Measured in --40 CaO<br>0.01 \ ee<br>3.84 MHz Bandwidth @ 10 MHz Offset. PAR = --50<br>8.5 dB @ 0.01% Probability on CCDF --ACPR in +ACPR in<br>--60 --IM3 in 3.84 MHz BW 3.84 MHz BW +IM3 in<br>0.001<br>3.84 MHz BW 3.84 MHz BW<br>--70<br>0.0001 ft ft | fl\- --80 ASINAE<br>0 2 4 6 8 10 --25 --20 --15 --10 --5 0 5 10 15 20 25<br>PEAK--TO--AVERAGE (dB) f, FREQUENCY (MHz)<br>(dB)<br>PROBABILITY (%)<br>**----- End of picture text -----**<br>
**Figure 15. CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single--Carrier Test Signal**
**Figure 16. 2-Carrier W-CDMA Spectrum**
**MRF6S20010NR1 MRF6S20010GNR1**
RF Device Data Freescale Semiconductor
9
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N--CDMA TYPICAL CHARACTERISTICS — 1930--1990 MHz<br>R1<br>VBIAS VSUPPLY<br>+<br>R2 Z7<br>C11 C1 C7 C3 C4 C5<br>Z17<br>R3<br>Z8<br>RF RF<br>INPUT OUTPUT<br>Z1 Z2 Z3 Z4 Z5 Z6 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16<br>C2 C6<br>DUT<br>Z18<br>oe<br>Ill C8 C9 C10<br>Z1 0.066 x 0.480 Microstrip Z11 0.244 x 0.423 Microstrip<br>Z2 0.066 x 0.728 Microstrip Z12 0.244 x 0.066 x 0.089 Taper<br>Z3 0.354 x 0.512 Microstrip Z13 0.066 x 0.182 Microstrip<br>Z4 0.066 x 0.079 Microstrip Z14 0.066 x 0.263 Microstrip<br>Z5, Z6 0.591 x 0.335 Microstrip Z15 0.236 x 0.118 Microstrip<br>Z7 0.050 x 0.980 Microstrip Z16 0.066 x 0.099 Microstrip<br>Z8 1.142 x 0.350 Microstrip Z17, Z18 0.050 x 1.250 Microstrip<br>Z9 1.142 x 0.516 Microstrip PCB Taconic RF--35, 0.030, r = 3.5<br>Z10 0.433 x 0.276 Microstrip<br>**----- End of picture text -----**<br>
**Figure 17. MRF6S20010NR1 Test Circuit Schematic — 1930--1990 MHz**
**Table 7. MRF6S20010NR1 Test Circuit Component Designations and Values — 1930--1990 MHz**
|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|C1|100 nF Chip Capacitor|12065C104KAT|AVX|
|C2, C6|4.7 pF Chip Capacitors|ATC100B4R7BT500XT|ATC|
|C3, C7, C8|9.1 pF Chip Capacitors|ATC100B9R1BT500XT|ATC|
|C4, C5, C9, C10|10F Chip Capacitors|C5750X5R1H106MT|TDK|
|C11|10F, 35 V Tantalum Chip Capacitor|TAJD106K035R|AVX|
|R1, R2|10 k, 1/4 W Chip Resistors|CRCW12061002FKEA|Vishay|
|R3|10, 1/4 W ChipResistor|CRCW120610R0FKEA|Vishay|
**MRF6S20010NR1 MRF6S20010GNR1**
RF Device Data Freescale Semiconductor
10
## **N--CDMA TYPICAL CHARACTERISTICS — 1930--1990 MHz**
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° 6 fo)° C11VDD ° } R2 C1 fo)° 0000000| | VGS o° ©<br>fo)6 °O cae a aTPATJ pGqoooo sooo oo00 0° C3 — C4 + C5 — 56°o (°<br>C7<br>R1<br>°0 @ om 00000009 9 00 R3 | fe)0 ® oo°00000000 ® °o<br>=<br>ee | | co<br>C2 C6<br>CT] : : ——<br>ee| | ||<br>5292000000000 |<br>fo) a ) @ °2 G M 09029°°—— @ ©<br>° Ooo 4g D 1e}<br>eS |e| | C8 L o O<br>C9 C10<br>“ey — 6<br>o F I oo0000000005 eo 0 coccocdooo| iO<br>reescale fs) ° [1 o °<br>O o 8 = oO<br>O [o] 8<br>°° ® MRF6S20010N ® ® oO 5 ° ® 00000000R ®0 0000000 O m°<br>° Rev 0 00000000000 22000000000 0000000000000<br>CUT OUT AREA<br>**----- End of picture text -----**<br>
**Figure 18. MRF6S20010NR1 Test Circuit Component Layout — 1930--1990 MHz**
**MRF6S20010NR1 MRF6S20010GNR1**
RF Device Data Freescale Semiconductor
11
## **N--CDMA TYPICAL CHARACTERISTICS — 1930--1990 MHz**
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15.9 19<br>15.8 V DD = 28 Vdc, P out = 1 W (Avg.), I DQ = 500 mA 18<br>15.7 N--CDMA IS--95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) || 17<br>15.6 PE| D 16<br>15.5 | | | pe | 15<br>15.4 Gps --59<br>15.3 --59.4 --8<br>15.2 --59.8 --11<br>ACPR<br>15.1 Lf | | |] | | | --60.2 --14<br>15 ne --60.6 --17<br>IRL<br>14.9 --61 --20<br>| ot | | | |<br>1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000<br>f, FREQUENCY (MHz)<br>Figure 19. Single--Carrier N--CDMA Broadband Performance<br>@ Pout = 1 Watt Avg.<br>50 --40<br>VDD = 28 Vdc, IDQ = 130 mA<br>f = 1960 MHz, N--CDMA IS--95<br>40 (Pilot, Sync, Paging, Traffic Codes --45<br>8 Through 13)<br>30 --50<br>D<br>20 a PZallil --55<br>a l<br>ACPR<br>10 --60<br>Tce ”<br>0 et ll --65<br>0.1 1 10<br>Pout, OUTPUT POWER (WATTS) AVG.<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>ACPR (dBc)<br>IRL, INPUT RETURN LOSS (dB)<br>ACPR (dBc)<br>, DRAIN EFFICIENCY (%)<br>D<br><br>**----- End of picture text -----**<br>
**Figure 20. Single--Carrier N--CDMA ACPR and Drain Efficiency versus Output Power**
**MRF6S20010NR1 MRF6S20010GNR1**
RF Device Data Freescale Semiconductor
12
## **N--CDMA TEST SIGNAL**
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**----- Start of picture text -----**<br>
100 --10<br>1.2288 MHz<br>--20 Channel BW<br>10 ———|—S --30 fora . ... [..] [.] [.] .... [.. ] .. [.][.] [.] . [.] .. [.][.] ..... [.][..][.][.........][.] ... ..... [.][.] .... .... [.][..] ... ... a<br>1 --40 ..... ....<br>Se eee . [..] [...] .<br>. [.] [.] .<br>0.1 Se --50 .... .....<br>0.0010.01 IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8ThrouCarriers. ACPR Measured in 30 kHz Bandwidth @on CCDF.885 kHz Offset. PAR = 9.8 dB @ 0.01% Probabilitygh 13) 1.2288 MHz Channel Bandwidth 7 NO \ ee --60--70--80 PT . ......... .. . [.] .. [..] [. .] [.] . [..] | . [.][.] [.] . [.][..] .. [..] ........ --ACPR in 30 kHz .... [..] .... [.] ..... .. ...... [.][.] . . [....] Le [.] ............ ..... [.] ...... [.] ......................... [..] +ACPR in 30 kHz Te . ........ [. ] .. [.] ............. .......... .......... [.] .... ... [.] [..] . ........ .......... [.] . [.] [..] ... [.][.] ................. .... . aa ... ....... [.] . ....... .. .<br>0.0001 0 2 4 6 8 oy 10 --100--90 ... .... . aa ............ [. ..][.] . [.] . ...... [..] .. [...][.][.][..] ................... Integrated BW Integrated BW a TL ............... .......... ....... [.] .... [.] ....................<br>PEAK--TO--AVERAGE (dB) TOE<br>--110<br>Figure 21. Single--Carrier CCDF N--CDMA --3.6 --2.9 --2.2 --1.5 --0.7 0 0.7 1.5 2.2 2.9 3.6<br>f, FREQUENCY (MHz)<br>(dB)<br>PROBABILITY (%)<br>**----- End of picture text -----**<br>
**Figure 22. Single--Carrier N--CDMA Spectrum**
**MRF6S20010NR1 MRF6S20010GNR1**
RF Device Data Freescale Semiconductor
13
## **GSM EDGE TYPICAL CHARACTERISTICS — 1805--1880 MHz**
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R1<br>VBIAS VSUPPLY<br>+<br>R2 Z9<br>C11 C1 C7 C3 C4 C5<br>Z17<br>R3<br>Z10<br>RF RF<br>INPUT OUTPUT<br>Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z11 Z12 Z13 Z14 Z15 Z16<br>C2 C6<br>DUT<br>2 Z18<br>[ll C8 C9 C10<br>Z1, Z16 0.066 x 0.480 Microstrip Z10 1.142 x 0.350 Microstrip<br>Z2 0.066 x 0.137 Microstrip Z11 1.142 x 0.516 Microstrip<br>Z3 0.236 x 0.236 Microstrip Z12 0.433 x 0.276 Microstrip<br>Z4 0.066 x 0.354 Microstrip Z13 0.276 x 0.157 Microstrip<br>Z5 0.551 x 0.512 Microstrip Z14 0.236 x 0.433 Microstrip<br>Z6 0.066 x 0.079 Microstrip Z15 0.066 x 0.104 Microstrip<br>Z7 0.591 x 0.189 Microstrip Z17, Z18 0.050 x 1.250 Microstrip<br>Z8 0.591 x 0.334 Microstrip PCB Taconic RF--35, 0.030, r = 3.5<br>Z9 0.050 x 0.980 Microstrip<br>**----- End of picture text -----**<br>
**Figure 23. MRF6S20010NR1 Test Circuit Schematic — 1805--1880 MHz**
**Table 8. MRF6S20010NR1 Test Circuit Component Designations and Values —1805--1880 MHz**
|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|C1|100 nF Chip Capacitor|12065C104KAT|AVX|
|C2, C6|4.7 pF Chip Capacitors|ATC100B4R7BT500XT|ATC|
|C3, C7, C8|9.1 pF Chip Capacitors|ATC100B9R1BT500XT|ATC|
|C4, C5, C9, C10|10F Chip Capacitors|C5750X5R1H106MT|TDK|
|C11|10F, 35 V Tantalum Chip Capacitor|TAJD106K035R|AVX|
|R1, R2|10 k, 1/4 W Chip Resistors|CRCW12061001FKEA|Vishay|
|R3|10, 1/4 W ChipResistor|CRCW120610R0FKEA|Vishay|
**MRF6S20010NR1 MRF6S20010GNR1**
RF Device Data Freescale Semiconductor
14
## **GSM EDGE TYPICAL CHARACTERISTICS — 1805--1880 MHz**
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°° e) VDD fe)Oo R2 C1 O —_|| VGS<br>6 ° C11 fo) 0000000<br>o 0 || ee qo &A2900000000000000 C4 C5<br>6 (fe PA C3 ———<br>C7<br>m8 R1 | | ot |<br>R3<br>°0° @ ome0000000_ 0000 G H L °0 ® 000000000 OBS<br>Ce EE LC)<br>C_]<br>C2 C6<br>CT J |<br>|<br>500000000000hk |<br>° @ @ 1 _JI C L 2 @ 2°90°°9°°@<br>fe) 00 FS<br>° eS |e| | L<br>C8<br>te C9 C10<br>f f fi 0000000000, co 8 coccccc o oo|<br>reescale °O o °8 a—<br>O o 8<br>ie)6 ) MRF6S20010N @ ) ® Oo 5oO ) 00000000A@R ) 00000000<br>° Rev. 0 00000000000 22000000000<br>CUT OUT AREA<br>**----- End of picture text -----**<br>
**Figure 24. MRF6S20010NR1 Test Circuit Component Layout — 1805--1880 MHz**
**MRF6S20010NR1 MRF6S20010GNR1**
RF Device Data Freescale Semiconductor
15
## **GSM EDGE TYPICAL CHARACTERISTICS — 1805--1880 MHz**
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17 50 0<br>Gps<br>16 40 --10<br>= +t<br>D<br>15 S C O OT 30 --20<br>IRL<br>14 EL A 20 --30<br>VDD = 28 Vdc<br>IDQ = 130 mA<br>13 P o e 10 --40<br>1800 1810 1820 1830 1840 1850 1860 1870 1880 1890 1900<br>f, FREQUENCY (MHz)<br>Figure 25. Power Gain, Input Return Loss and Drain<br>Efficiency versus Frequency @ Pout = 4 Watts<br>6 60<br>VDD = 28 Vdc<br>5 IDQ = 130 mA 50<br>f = 1840 MHz<br>4 pe nf 40<br>A Td<br>3 D 30<br>A<br>2 20<br>ev i l<br>EVM<br>1 10<br>a e ill<br>0 es 0<br>TL L E<br>0.1 1 10<br>Pout, OUTPUT POWER (WATTS) AVG.<br>, POWER GAIN (dB)<br>ps<br>G , DRAIN EFFICIENCY (%)<br>D<br><br>IRL, INPUT RETURN LOSS (dB)<br>, DRAIN EFFICIENCY (%)<br>D<br><br>EVM, ERROR VECTOR MAGNITUDE (% ms)<br>**----- End of picture text -----**<br>
**Figure 26. Error Vector Magnitude and Drain Efficiency versus Output Power**
## **GSM EDGE TEST SIGNAL**
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--50 --10<br>Reference Power<br>VDD = 28 Vdc --20 VBW = 30 kHz<br>--55 IDQ = 130 mA --30 Sweep Time = 70 ms<br>f = 1840 MHz RBW = 30 kHz<br>UT --40 aA<br>--60<br>--50<br>TMi SR @ 400 kHz = PEER<br>--65 --60<br>ee en tll|) i<br>400 kHz<br>--70 400 kHz<br>--70 ES --80 600 kHz 600 kHz<br>i) --90 Pe<br>--75 SR @ 600 kHz<br>--100<br>--80 --110<br>eee SO ill i<br>0.1 1 10 Center 1.96 GHz 200 kHz Span 2 MHz<br>Pout, OUTPUT POWER (WATTS)<br>Figure 27. Spectral Regrowth at 400 kHz and Figure 28. EDGE Spectrum<br>(dB)<br>SPECTRAL REGROWTH (dBc)<br>**----- End of picture text -----**<br>
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Figure 27. Spectral Regrowth at 400 kHz and<br>600 kHz versus Output Power<br>**----- End of picture text -----**<br>
**MRF6S20010NR1 MRF6S20010GNR1**
RF Device Data Freescale Semiconductor
16
**2170 MHz**
**==> picture [477 x 635] intentionally omitted <==**
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StMT LTERRA Zo = 25 BREROK VDD = 28 Vdc, IDQ = 130 mA, Pout = 10 W PEP<br>fel | BLISODLITER LORS f Zsource Zload<br>BPI FLTLOEELILOREELRRO BRIKEN MHz <br>ef bee LRT SOILD<br>1 HyEBSRNSPAT ITIL f = 2170 MHz ARETPTILKILKOLO KON 2110 3.619 + j0.792 2.544 + j3.068<br>{ ste POTEET LILI PLE?<br>Zload 2140 3.918 + j0.797 2.673 + j3.291<br>f = 2110 MHz 2170 4.087 + j0.558 2.818 + j3.406<br>Rade te aae<br>f = 2170 MHz<br>Ri MOM i fi peePererics<br>ora] feee f = 2110 MHz STANCE Zsource <oumonent( fi.) of SONDucTANGE COMP (-) if<br>So f VP KOM ER<br>LS PL [RERRR] ERD SOS<br>Zo = 25 <br>WTYI LYLEOLS SOS 1900 MHz<br>A LI ERLE EEO, KKKROS<br>ete gy LDIF ERLE LEE VDD = 28 Vdc, IDQ = 130 mA, Pout = 1 W Avg.<br>f Zsource Zload<br>MHz <br>SOY f = 1990 MHz Le<br>Zload 1930 9.237 + j1.849 2.770 + j3.497<br>e] = fayEEgSee, Pipher f = 1930 MHz ats pet ELTetaenneses, LT AEARRR 1960 9.521 + j2.144 2.754 + j3.668<br>f = 1990 MHz<br>fanart: ence Oy LT PATE<br>Rerieeaeer f = 1930 MHz Zsource 1990 9.889 + j2.434 2.772 + j3.833<br>Summeeessessssaszseueaverseseesssiers EEScgasy o t CEPAHyHd<br> ia Wiwecirmesrirere<br>BESSo f VPPERKOM ERRE ER xen<br>BE RKKKNS cs 1800 MHz<br>VDD = 28 Vdc, IDQ = 130 mA, Pout = 4 W Avg.<br>Zo = 25 <br>|ME TTEAREO O O S f Zsource Zload<br>BLISTER LR [RS] MHz <br>/8 LY & ly LAIR L> 1805 13.237 + j5.810 2.445 + j3.698<br>f = 1880 MHz<br>Zload 1840 13.953 + j6.084 2.542 + j3.942<br>f = 1805 MHz Zsource<br>ef Risto f = 1805 MHz EEE wae 1880 14.858 + j6.279 2.695 + j4.170<br>eupesscetessssciss::MMnan eeemaetee f = 1880 MHz am<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Ceesstti tee eemec eens fie ME MECRE SL oc Zload = Test circuit impedance as measured<br>from drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>Zsource Zload<br>**----- End of picture text -----**<br>
**Figure 29. Series Equivalent Source and Load Impedance**
**MRF6S20010NR1 MRF6S20010GNR1**
RF Device Data Freescale Semiconductor
17
**Table 9. Common Source Scattering Parameters** (VDD = 28 V, IDQ = 126 mA, TA = 25C, 50 ohm system)
|**f**<br>**MHz**<br>~~ee~~|**S11**<br>~~eeeee~~|**S11**<br>~~eeeee~~|**S21**<br>~~cececee~~|**S21**<br>~~cececee~~|**S12**<br>~~eeeeee~~|**S12**<br>~~eeeeee~~|**S22**<br>~~eeeee~~|**S22**<br>~~eeeee~~|
|---|---|---|---|---|---|---|---|---|
||**|S11|**<br>~~ee~~|<br>~~eee~~|**|S21|**<br>~~cece~~|<br>~~cee~~|**|S12|**<br>~~eee~~|<br>~~eee~~|**|S22|**<br>~~eee~~|<br>~~ee~~|
|500<br>~~ee~~<br>~~a~~|0.984<br>~~ee ~~|--178.1<br> ~~eee ~~|1.195<br> ~~cece ~~|42.42<br> ~~cee ~~|0.001<br> ~~eee ~~|--129.1<br> ~~eee ~~|0.875<br> ~~eee ~~|--116.3<br> ~~ee~~|
|550<br>~~a~~|0.986|--179.0|0.947|40.48|0.001|--159.2|0.892|--121.6|
|600<br>~~a~~|0.985|179.9|0.747|39.66|0.001|147.4|0.905|--125.9|
|650<br>~~a~~|0.986|178.9|0.581|39.89|0.001|119.1|0.913|--129.9|
|700<br>~~a~~|0.982|177.9|0.446|41.80|0.001|108.1|0.927|--133.4|
|750<br>~~a~~<br>~~a~~<br>~~Re~~|0.983<br>~~Re~~|177.2<br>~~Ge~~|0.336<br>~~GG~~|46.70<br>~~GG~~|0.002<br>~~GG~~|102.9<br>~~GO~~|0.935<br>~~GO~~|--136.4|
|800<br>~~Re~~|0.983<br>~~Re~~|176.5<br>~~Ge~~|0.248<br>~~GG~~|56.02<br>~~GG~~|0.002<br>~~GG~~|96.99<br>~~GO~~|0.941<br>~~GO~~|--139.5|
|850<br>~~Re~~<br>~~a~~|0.979<br>~~Re~~|175.5<br>~~Ge ~~|0.188<br> ~~GG~~|72.74<br>~~GG~~|0.003<br>~~GG~~|97.40<br>~~GO~~|0.947<br>~~GO~~|--141.9|
|900<br>~~a~~|0.980|174.8|0.168|96.69|0.003|94.63|0.951|--144.4|
|950<br>~~a~~|0.977|174.0|0.183|119.3|0.004|91.92|0.955|--146.6|
|1000<br>~~a~~|0.978|173.2|0.223|134.3|0.004|92.80|0.960|--148.6|
|1050<br>~~a~~|0.972|172.4|0.276|142.2|0.004|89.92|0.962|--150.5|
|1100<br>~~a~~<br>~~a~~<br>~~Re~~|0.972<br>~~Re~~|171.4<br>~~Ge~~|0.335<br>~~GG~~|146.4<br>~~GG~~|0.005<br>~~GG~~|89.90<br>~~GO~~|0.966<br>~~GO~~|--152.2|
|1150<br>~~Re~~<br>~~a~~|0.963<br>~~Re~~<br>|170.8<br>~~Ge~~<br>|0.396<br>~~GG~~<br>|148.5<br>~~GG~~<br>|0.005<br>~~GG~~<br>|87.51<br>~~GO~~<br>|0.977<br>~~GO~~<br>|--153.7<br>|
|1200<br>~~Re~~<br>~~a~~|0.964<br>~~Re~~<br>|169.9<br>~~Ge ~~<br>|0.461<br> ~~GG~~<br>|148.8<br>~~GG~~<br>|0.006<br>~~GG~~<br>|89.25<br>~~GO~~<br>|0.971<br>~~GO~~<br>|--155.2<br>|
|1250<br>~~aee~~|0.956<br>~~ee~~|169.0<br>~~ee~~|0.531<br>~~ee~~|148.2<br>~~ee~~|0.007<br>~~ee~~|86.98<br>~~ee~~|0.977<br>~~ee~~|--156.8<br>~~ee~~|
|1300<br>~~a~~|0.948|167.8|0.604|146.9|0.007|85.08|0.982|--157.9|
|1350<br>~~a~~|0.939|167.0|0.685|144.8|0.008|82.40|0.986|--159.5|
|1400<br>~~a~~|0.927|165.7|0.772|142.2|0.008|79.69|0.988|--160.7|
|1450<br>~~a~~<br>~~aRe~~|0.910<br>~~Re~~|164.5<br>~~Ge~~|0.869<br>~~GG~~|138.7<br>~~GG~~|0.009<br>~~GG~~|77.79<br>~~GO~~|0.994<br>~~GO~~|--162.1|
|1500<br>~~Re~~|0.889<br>~~Re~~|163.2<br>~~Ge~~|0.975<br>~~GG~~|134.7<br>~~GG~~|0.010<br>~~GG~~|75.79<br>~~GO~~|0.991<br>~~GO~~|--163.4|
|1550<br>~~Re~~<br>~~i~~<br>~~a~~|0.861<br>~~Re~~<br>~~i~~|161.9<br>~~Ge ~~<br>~~i~~|1.093<br> ~~GG~~<br>~~i~~|129.7<br>~~GG~~<br>~~i~~|0.010<br>~~GG~~<br>~~i~~|72.86<br>~~GO~~<br>~~i~~|0.993<br>~~GO~~<br>~~i~~|--164.7<br>~~i~~|
|1600<br>~~i~~<br>~~a~~|0.821<br>~~i~~|160.9<br>~~i~~|1.221<br>~~i~~|123.8<br>~~i~~|0.011<br>~~i~~|69.89<br>~~i~~|0.996<br>~~i~~|--166.0<br>~~i~~|
|1650<br>~~aa~~|0.780|160.1|1.356|116.7|0.012|63.71|0.984|--167.4|
|1700<br>~~a~~<br>~~a~~|0.722|160.6|1.491|108.3|0.013|57.70|0.985|--168.5|
|1750<br>~~a~~|0.666|162.5|1.606|98.77|0.014|49.85|0.977|--169.6|
|1800<br>~~a~~<br>~~aRe~~|0.618<br>~~Re~~|167.0<br>~~Ge~~|1.687<br>~~GG~~|88.09<br>~~GG~~|0.014<br>~~GG~~|41.19<br>~~GO~~|0.970<br>~~GO~~|--170.8|
|1850<br>~~Re~~|0.603<br>~~Re~~|173.3<br>~~Ge~~|1.706<br>~~GG~~|76.98<br>~~GG~~|0.013<br>~~GG~~|32.65<br>~~GO~~|0.958<br>~~GO~~|--171.3|
|1900<br>~~Re~~<br>~~a~~|0.614<br>~~Re~~|179.7<br>~~Ge ~~|1.673<br> ~~GG~~|66.08<br>~~GG~~|0.012<br>~~GG~~|25.40<br>~~GO~~|0.954<br>~~GO~~|--171.9|
|1950<br>~~a~~|0.654|--175.6|1.591|55.96|0.011|20.73|0.945|--172.3|
|2000<br>~~a~~|0.701|--173.5|1.484|47.04|0.010|15.11|0.947|--172.6|
|2050<br>~~a~~<br>~~a~~|0.747<br><br>|--172.7<br><br>|1.364<br><br>~~GG~~<br>|39.29<br><br>~~GG~~<br>|0.008<br><br>~~GG~~<br>|10.13<br><br>~~CO~~|0.947<br><br>~~CO~~|--173.0<br>|
|2100<br>~~ee~~<br>~~a~~|0.783<br>~~ee~~<br>|--172.6<br>~~ee~~<br>|1.242<br>~~ee~~<br>~~GG~~<br>|32.87<br>~~ee~~<br>~~GG~~<br>|0.006<br>~~ee~~<br>~~GG~~<br>|6.333<br>~~ee~~<br>~~CO~~|0.945<br>~~ee~~<br>~~CO~~|--173.6<br>~~ee~~|
|2150<br>~~ee~~<br>~~aRe~~|0.816<br>~~ee~~<br>~~Re~~|--172.9<br>~~ee~~<br>~~Ge~~|1.136<br>~~ee~~<br>~~GG~~<br>~~GG~~|27.69<br>~~ee~~<br>~~GG~~<br>~~GG~~|0.004<br>~~ee~~<br>~~GG~~<br>~~GG~~|15.63<br>~~ee~~<br>~~CO~~<br>~~GO~~|0.944<br>~~ee~~<br>~~CO~~<br>~~GO~~|--173.9<br>~~ee~~|
|2200<br>~~Re~~|0.842<br>~~Re~~|--173.6<br>~~Ge~~|1.042<br>~~GG~~|23.26<br>~~GG~~|0.004<br>~~GG~~|42.20<br>~~GO~~|0.944<br>~~GO~~|--174.2|
|2250<br>~~Re~~<br>~~i~~|0.864<br>~~Re~~<br>~~i~~|--174.2<br>~~Ge ~~<br>~~i~~|0.961<br> ~~GG~~<br>~~i~~|19.26<br>~~GG~~<br>~~i~~|0.005<br>~~GG~~<br>~~i~~|57.76<br>~~GO~~<br>~~i~~|0.948<br>~~GO~~<br>~~i~~|--174.6<br>~~i~~|
|2300<br>~~a~~|0.882<br>~~a~~|--175.0<br>~~a~~|0.888<br>~~a~~|15.75<br>~~a~~|0.006<br>~~a~~|62.56<br>~~a~~|0.948<br>~~a~~|--175.2<br>~~a~~|
|2350<br>~~a~~|0.894<br>~~a~~|--175.7<br>~~a~~|0.822<br>~~a~~|12.69<br>~~a~~|0.008<br>~~a~~|59.72<br>~~a~~|0.949<br>~~a~~|--175.7<br>~~a~~|
|2400<br>~~a~~|0.906<br>~~a~~|--176.4<br>~~a~~|0.764<br>~~a~~|9.857<br>~~a~~|0.009<br>~~a~~|49.09<br>~~a~~|0.951<br>~~a~~|--176.1<br>~~a~~|
|2450<br>~~a~~|0.910<br>~~a~~<br>~~a~~|--176.9<br>~~a~~|0.712<br>~~a~~|7.587<br>~~a~~|0.008<br>~~a~~|39.24<br>~~a~~|0.955<br>~~a~~|--176.5<br>~~a~~|
(continued)
**MRF6S20010NR1 MRF6S20010GNR1**
RF Device Data Freescale Semiconductor
18
|**f**<br>**MHz**<br>~~ee~~|**S11**<br>~~eecee~~|**S11**<br>~~eecee~~|**S21**<br>~~ceeeee~~|**S21**<br>~~ceeeee~~|**S12**<br>~~eeeee~~|**S12**<br>~~eeeee~~|**S22**<br>~~ee~~|**S22**<br>~~ee~~|
|---|---|---|---|---|---|---|---|---|
||**|S11|**<br>~~ee~~|<br>~~cee~~|**|S21|**<br>~~cee~~|<br>~~eee~~|**|S12|**<br>~~eee~~|<br>~~ee~~|**|S22|**<br>~~ee~~||
|2500<br>~~ee~~<br>~~a~~<br>~~a~~|0.923<br>~~ee ~~|--177.5<br> ~~cee ~~|0.666<br> ~~cee ~~|5.462<br> ~~eee ~~|0.006<br> ~~eee ~~|42.56<br> ~~ee ~~|0.957<br> ~~ee~~|--177.2|
|2550<br>~~a~~|0.927|--178.0|0.625|3.680|0.006|52.25|0.962|--177.8|
|2600<br>~~aa~~|0.937|--178.8|0.591|1.864|0.006|60.26|0.961|--178.4|
|2650<br>~~a~~|0.937|--179.0|0.559|0.237|0.007|64.14|0.964|--179.1|
|2700<br>~~a~~|0.942|--179.8|0.529|--1.378|0.007|65.62|0.964|--179.6|
|2750<br>~~a~~<br>~~a~~<br>~~po~~|0.945|--179.9|0.504|--2.768|0.007|64.71|0.964|179.7|
|2800<br>~~po~~|0.946|179.5|0.479|--4.088|0.007|67.58|0.966|179.4|
|2850<br>~~po~~<br>~~a~~<br>~~a~~|0.950|179.3|0.456|--5.412|0.007|75.44|0.966|178.8|
|2900<br>~~a~~|0.949|178.8|0.436|--6.305|0.008|82.04|0.964|178.3|
|2950<br>~~aa~~|0.952|178.5|0.419|--7.279|0.009|83.60|0.967|177.9|
|3000<br>~~a~~|0.950|178.4|0.402|--8.087|0.011|83.41|0.968|177.4|
|3050<br>~~a~~|0.958|177.9|0.387|--9.138|0.012|81.35|0.964|176.8|
|3100<br>~~a~~<br>~~a~~<br>~~po~~|0.953|177.7|0.373|--9.904|0.013|77.45|0.969|176.4|
|3150<br>~~po~~|0.957|177.2|0.362|--10.86|0.014|70.98|0.970|176.2|
|3200<br>~~po~~<br>~~a~~|0.960<br>~~a~~|177.4|0.350|--11.79|0.013|67.00|0.970|175.5|
**MRF6S20010NR1 MRF6S20010GNR1**
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## **PACKAGE DIMENSIONS**
**MRF6S20010NR1 MRF6S20010GNR1**
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**MRF6S20010NR1 MRF6S20010GNR1**
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**MRF6S20010NR1 MRF6S20010GNR1**
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**MRF6S20010NR1 MRF6S20010GNR1**
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**MRF6S20010NR1 MRF6S20010GNR1**
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**MRF6S20010NR1 MRF6S20010GNR1**
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## **PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE**
Refer to the following documents to aid your design process.
## **Application Notes**
- AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers
- AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
## **Engineering Bulletins**
- EB212: Using Data Sheet Impedances for RF LDMOS Devices
## **Software**
- Electromigration MTTF Calculator
- RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.
## **REVISION HISTORY**
The following table summarizes revisions to this document.
|**Revision**|**Date**|**Description**|
|---|---|---|
|2|Dec. 2008|<br>Changed Storage Temperature Range in Max Ratings table from --65 to +175 to --65 to +150 for<br>standardization across products, p. 1<br><br>Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150C, p. 1<br><br>Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table, related<br>“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200C to 225C<br>in Capable Plastic Package bullet, p. 1<br><br>Corrected VDSto VDDin the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2<br><br>Corrected Cisstest condition to indicate AC stimulus on the VGSconnection versus the VDSconnection,<br>Dynamic Characteristics table, p. 2<br><br>Updated Part Numbers in Tables 6, 7, 8, Component Designations and Values, to RoHS compliant part<br>numbers, p. 4, 10, 14<br><br>Adjusted scale for Fig. 7, Intermodulation Distortion Products versus Tone Spacing, to better match the<br>device’s capabilities, p. 6<br><br>Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture<br>limitations, p. 7<br><br>Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed<br>operating characteristics and location of MTTF calculator for device, p. 7<br><br>Removed ALT1 definition from Fig. 21, Single--Carrier CCDF N--CDMA, given no supporting performance<br>information provided, p. 13<br><br>Replaced Case Outline 1265--08 with 1265--09, Issue K, p. 1, 20--22. Corrected cross hatch pattern in<br>bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed<br>from Min--Max .290--.320 to .290 Min; E3 changed from Min--Max .150--.180 to .150 Min). Added JEDEC<br>Standard Package Number.<br><br>Replaced Case Outline 1265A--02 with 1265A--03, Issue C, p. 1, 23--25. Corrected cross hatch pattern<br>and its dimensions (D2 and E2) on source contact (D2 changed from Min--Max .290--.320 to .290 Min; E3<br>changed from Min--Max .150--.180 to .150 Min). Added pin numbers. Corrected mm dimension L for<br>gull--wing foot from 4.90--5.06 Min--Max to 0.46--0.61 Min--Max. Added JEDEC Standard Package<br>Number.<br><br>Added Product Documentation and Revision History, p. 26|
|3|June 2009|<br>Corrected decimal placement for Ciss(changed 0.12 pF to 120 pF) and Coss(changed 0.02 pF to 20 pF),<br>Dynamic Characteristics table, p. 2<br><br>Added footnote, Measurement made with device in straight lead configuration before any lead forming<br>operation is applied, to Functional Tests table, p. 2.<br><br>Added AN3789, Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages to<br>Product Documentation, Application Notes, p. 26<br><br>Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 26|
(continued)
**MRF6S20010NR1 MRF6S20010GNR1**
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## **REVISION HISTORY (cont.)**
|||**REVISION HISTORY (cont.)**|
|---|---|---|
|**Revision**|**Date**|**Description**|
|4|Jan. 2014|<br>Table 2. Thermal Characteristics: CW thermal value changed from 2.5 to 2.3C/W to reflect recent thermal<br>test results; two--tone test W PEP thermal value changed from 5.9 to 2.9C/W to reflect recent thermal test<br>results. Thermal value changes are based on an improvement in the RF feedback resistor design, p. 2<br><br>Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD<br>ratings are characterized during new product development but are not 100% tested during production.<br>ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD<br>sensitive devices, p. 2<br><br>Fig. 12, MTTF versus Junction Temperature removed, p. 7. Refer to the device’s MTTF Calculator<br>available at freescale.com/RFpower. Go to Design Resources > Software and Tools.|
**MRF6S20010NR1 MRF6S20010GNR1**
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## _**How to Reach Us:**_
**Home Page:** freescale.com
**Web Support:** freescale.com/support
Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document.
Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions.
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners.
E 2005--2006, 2008--2009, 2014 Freescale Semiconductor, Inc.
**MRF6S20010NR1 MRF6S20010GNR1**
RF Device Data Freescale Semiconductor
Document Number: MRF6S20010N 28Rev. 4, 1/2014
Updated at February 9, 2023
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