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MMIX1F520N075T2
Power MOSFET, N Channel, 75 V, 500 A, 1600 µohm, SMT, Surface Mount
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:500A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Pow
- MSL: MSL 1 - Unlimited
- No. of Pins: 21Pins
- Channel Type: N Channel
- Product Range: TrenchT2 GigaMOS HiperFET
- Qualification: -
- Power Dissipation: 830W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SMT
- Drain Source Voltage Vds: 75V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 500A
- Drain Source On State Resistance: 1600µohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 11.89 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **TrenchT2[TM] GigaMOS[TM] HiperFET[TM] Power MOSFET** ## **MMIX1F520N075T2** **V = 75V DSS I = 500A D25 R 1.6m DS(on)** ## **(Electrically Isolated Tab)** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode |**Symbol**|**Test Conditions**|**Maximum Ratings**|**Maximum Ratings**|| |---|---|---|---|---| |**VDSS**|TJ = 25C to 175C||75|V| |**VDGR**|TJ = 25C to 175C, RGS= 1M||75|V| |**VGSS**|Continuous||20|V| |**VGSM**|Transient||30|V| |**ID25**|TC = 25C|500|500|A| |**IDM**|TC = 25C, Pulse Width Limited by TJM||1700|A| |**IA**|TC = 25C||200|A| |**EAS**|TC = 25C||3|J| |**PD**|TC = 25C||830|W| |**TJ**||-55 ... +175||C| |**TJM**|||175|C| |**Tstg**||-55 ... +175||C| |**TL**|Maximum Lead Temperature for Soldering 300||Maximum Lead Temperature for Soldering 300|°C| |**TSOLD**|Plastic Body for 10s||260|C| |**VISOL**|50/60 Hz, 1 Minute 2500|50/60 Hz, 1 Minute 2500|50/60 Hz, 1 Minute 2500|V~| |**FC**|Mounting Force<br>50..200 / 11..45 N/lb.|50..200 / 11..45 N/lb.|50..200 / 11..45 N/lb.|50..200 / 11..45 N/lb.| |**Weight**|8 g|8 g|8 g|8 g| **==> picture [111 x 66] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>G<br>S<br>**----- End of picture text -----**<br> **==> picture [95 x 98] intentionally omitted <==** **----- Start of picture text -----**<br> Isolated Tab<br>D<br>S<br>G<br>**----- End of picture text -----**<br> G = Gate D = Drain S = Source ## **Features** - Silicon Chip on Direct-Copper Bond (DCB) Substrate - Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power - Cycling Capability - High Isolation Voltage (2500V~) - 175°C Operating Temperature - Very High Current Handling - Capability Fast Intrinsic Diode - Avalanche Rated - Very Low RDS(on) |**Symbol**<br>(T= 25C, Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 3mA<br>75|~~=~~|V| |**VGS(th)**<br>VDS = VGS, ID= 8mA<br>2.5 5.0 V|2.5 5.0 V<br>~~=~~<br>~~—~~|2.5 5.0 V| |**IGSS**<br>VGS =20V, VDS= 0V<br>|<br>~~—~~|200 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>25<br>TJ= 150C<br>2.0 mA|25<br>2.0 mA<br>~~_~~|25A<br>2.0 mA| |**RDS(on)**<br>VGS = 10V, ID= 100A, Note 1<br>1.6 m|1.6 m<br>~~—~~|1.6 m| ## **Advantages** - Easy to Mount - Space Savings - High Power Density ## **Applications** - DC-DC Converters and Off-Line UPS - Primary-Side Switch High Speed Power Switching Applications DS100269B(12/15) © 2015 IXYS CORPORATION, All Rights Reserved **MMIX1F520N075T2** |**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>|**Symbol**<br>**Test Conditions Characteristic Values**<br> <br>| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min.**|**Typ.**|**Max.**| |**gfs**<br>VDS= 10V, ID= 60A, Note 1 95|155|S| |**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|41<br>4150<br>530|nF<br>pF<br>pF| |**RGI**Gate Input Resistance|1.36|| |**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 200A<br>RG= 1 (External)|48<br>36<br>80<br>35|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 260A<br> <br>**Qgd**<br>|545<br>177<br>135|nC<br>nC<br>nC| |**RthJC**<br> <br>**RthCS**<br>|<br>0.05|0.18C/W<br>C/W| ## **Source-Drain Diode** **Symbol Test Conditions Characteristic Values** (TJ = 25C, Unless Otherwise Specified) **Min. Typ. Max.** |<br>||| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min.**|**Typ.**|**Max.**| |||| |**IS**<br>VGS= 0V||520 A| |**ISM**<br>Repetitive, Pulse Width Limited by TJM||1600 A| |**VSD**<br>IF= 100A, VGS= 0V, Note 1||1.25 V| |**trr**<br> <br>**IRM**<br> <br>**QRM**<br> <br>IF= 150A, VGS= 0V<br>-di/dt = 100A/s<br>VR= 37.5V|<br>7<br>357|150 ns<br>A<br>nC| |||| Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 ## **MMIX1F520N075T2** **==> picture [264 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25ºC<br>400<br>VGS = 15V<br>350 10V<br> 8V<br>7V<br>300<br>250<br>6V<br>200<br>150<br>100 5V<br>50<br>4V<br>0<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [265 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Output Characteristics @ TJ = 150ºC<br>400<br>V GS = 15V<br> 10V<br>350<br> 8V<br> 7V<br>300<br>250 6V<br>200<br>150<br>5V<br>100<br>50 4V<br>3V<br>0<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [535 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 3. Normalized RDS(on) vs. Junction Temperature Fig. 4. Normalized RDS(on) vs. Drain Current<br>2.2 2.2<br>V GS = 10V<br>2.0 I D < 520A 2.0<br>1.8 TJ = 175ºC<br>1.8<br>1.6<br>1.6<br> VGS = 10V<br>1.4 15V<br>1.4<br>1.2<br>1.2<br>1.0<br>T J = 25ºC<br>0.8 1.0<br>0.6 0.8<br>-50 -25 0 25 50 75 100 125 150 175 0 50 100 150 200 250 300 350<br>TJ - Degrees Centigrade ID - Amperes<br> - Normalized - Normalized<br>DS(on) DS(on)<br>R R<br>**----- End of picture text -----**<br> **Fig. 5. Drain Current vs. Case Temperature** **==> picture [256 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 600<br>500<br>400<br>300<br>200<br>100<br>0<br>-50 -25 0 25 50 75 100 125 150 175<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> ## **Fig. 6. Input Admittance** **==> picture [253 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>225<br>200 T J = 150ºC<br> 25ºC<br>175 - 40ºC<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2015 IXYS CORPORATION, All Rights Reserved **MMIX1F520N075T2** **==> picture [537 x 434] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode<br>300 350<br>TJ = - 40ºC<br>300<br>250<br>25ºC 250<br>200<br>150ºC 200<br>150<br>150<br>100 TJ = 150ºC<br>100<br>TJ = 25 º C<br>50<br>50<br>0 0<br>0 50 100 150 200 250 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>ID - Amperes VSD - Volts<br>Fig. 9. Gate Charge Fig. 10. Capacitance<br>10 100<br>9 VDS = 37.5V<br> I D = 260A<br>8 I G = 10mA C iss<br>7<br>10<br>6<br>5<br>Coss<br>4<br>1<br>3<br>2<br>Crss<br>1 f = 1 MHz<br>0 0.1<br>0 100 200 300 400 500 600 0 5 10 15 20 25 30 35 40<br>QG - NanoCoulombs VDS - Volts<br> - Siemens<br>gf s - AmperesIS<br> - Volts<br>GS<br>V<br>Capacitance - NanoFarads<br>**----- End of picture text -----**<br> **==> picture [538 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 11. Forward-Bias Safe Operating Area Fig. 12. Maximum Transient Thermal Impedance<br>10,000 1<br>R DS(on) Limit<br>25µs<br>1,000 0.1<br>100µ s<br>100 0.01<br>1ms<br>10 TJ = 175ºC 10m s 0.001<br>TC = 25ºC 100m s<br>Single Pulse DC<br>1 0.0001<br>1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10<br>VDS - Volts Pulse Width - Seconds<br> - Amperes ID - K / W Z(th)JC<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **MMIX1F520N075T2** **==> picture [260 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Resistive Turn-on Rise Time<br>vs. Junction Temperature<br>180<br>160 RG = 1Ω , VGS = 10V<br> V DS = 37.5V<br>140<br>120<br>I D = 200A<br>100<br>80<br>60<br>I D = 100A<br>40<br>20<br>0<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br> - Nanosecondsr<br>t<br>**----- End of picture text -----**<br> ## **Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance** **==> picture [255 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 600 240<br> t r t d(on) - - - -<br>500 T J = 125ºC, V GS = 10V I D = 200A 200<br> VDS = 37.5V<br>400 160<br>300 120<br>I D = 100A<br>200 80<br>100 40<br>0 0<br>1 2 3 4 5 6 7 8 9 10<br>RG - Ohms<br> - Nanosecondsr d(on)t<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br> ## **Fig. 17. Resistive Turn-off Switching Times vs. Drain Current** **==> picture [255 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 46 180<br> t f td(off) - - - -<br>44 160<br> RG = 1Ω, VGS = 10V<br> VDS = 37.5V<br>42 140<br>40 120<br>38 T J = 125ºC 100<br>TJ = 25ºC<br>36 80<br>34 60<br>32 40<br>40 60 80 100 120 140 160 180 200<br>ID - Amperes<br> d(off)t<br> - Nanosecondsf<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br> **==> picture [263 x 639] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 14. Resistive Turn-on Rise Time<br>vs. Drain Current<br>180<br>160 RG = 1Ω , VGS = 10V<br> V DS = 37.5V<br>140<br>120 TJ = 125ºC<br>100<br>80<br>60<br>40<br>20 TJ = 25ºC<br>0<br>40 60 80 100 120 140 160 180 200<br>ID - Amperes<br>Fig. 16. Resistive Turn-off Switching Times<br>vs. Junction Temperature<br>44 140<br> t f td(off) - - - -<br>42 130<br> RG = 1Ω, VGS = 10V<br> VDS = 37.5V<br>40 120<br>38 110<br>I D = 100A<br>36 100<br>I D = 200A<br>34 90<br>32 80<br>30 70<br>25 35 45 55 65 75 85 95 105 115 125<br>TJ - Degrees Centigrade<br>Fig. 18. Resistive Turn-off Switching Times<br>vs. Gate Resistance<br>600 600<br> t f t d(off) - - - -<br>500 TJ = 125ºC, VGS = 10V 500<br> V DS = 37.5V<br>400 I D = 200A, 100A 400<br>300 300<br>200 200<br>100 100<br>0 0<br>1 2 3 4 5 6 7 8 9 10<br>RG - Ohms<br> - Nanosecondsr<br>t<br> d(off)t<br> - Nanosecondsf<br>t<br> - Nanoseconds<br> d(off)t<br> - Nanosecondsf<br>t<br> - Nanoseconds<br>**----- End of picture text -----**<br> © 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: IXFZ520N075T2 (V9)3-03-10 **MMIX1F520N075T2** ## **Package Outline** **PIN: 1 = Gate 5-12 = Source 13-24 = Drain** IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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