MJ2955

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## COMPLEMENTARY SILICON POWER TRANSISTORS 

. designed for use in general-purpose amplifier and switching applications 

NPN PNP 2N3055 MJ2955 

## FEATURES: 

* Power Dissipation - Py, = 115W @ T,. = 25°C 

* DC Current Gain hFE = 20~ 70@1,=4.0A 

## MAXIMUM RATINGS 

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||||||||
|---|---|---|---|---|---|---|
|Characteristic|Symbol|Rating|||unit ||
|Collector-Emitter|Voltage|60|
|an|
|Collector Current-Continucus|le|15|
|Base Current|lp|7.0|
|Total|Power|Dissipation|@T,=25°C|Py|115|WwW|
|Derate|above|25°C|0.657|wc|
|Operating|and|Storage|Junction|Ty .Tst¢|°C|
|Temperature Range|- 65 to +200|

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## THERMAL CHARACTERISTICS 

COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 115 WATTS 

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COLLECTOR(CASE)<br>aFIGURE -1 POWER DERATING ] bm| MMT<br>yaoi} | | [| | | | | a | 3875 | 3086<br>Fa8 00ptt tt tt BB | 19.281928 || 22.2372.23<br>sot + tw | ft ft tf D | 1118 | 1219<br>WYSSogop | |[ft[| E | 2520 | 2667<br>oe) pecfocpa pepe af | c | 138 | 162<br>fo4 | | [| | | KT HH | 28.80; | 20.40;<br>ett | [ TT T T RY J | 388 | 436<br>0 25 50 75 100 125 150 175 200 K 10.67 | 11.18<br>T ¢, TEMPERATURE(*C) :<br>**----- End of picture text -----**<br>


## 2N3055 NPN / MJ2955 PNP a ELECTRICAL CHARACTERISTICS ( T, = 25°C unless otherwise noted ) 

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OFF CHARACTERISTICS<br>Collector - Emitter Sustaining Voltage (1) Vceo(sus) V<br>(I, = 200 mA, |, = 0)<br>Collector-Emitter Sustaining Voltage (1) Veerisus) v<br>(lq = 200 mA, Roe = 100 Ohms) 70<br>Collector Cutoff Current loco mA<br>( Veg = 30 V, I, = 0) 0.7<br>Collector Cutoff Current mA<br>(Veg(Veg == 100100 V, V, ViaggioVaciom = 1.5 V  )Te. = 150°C ) 51 .0<br>Emitter Cutoff Current mA<br>(Veg= 7.0V,1,=0 )<br>ON CHARACTERISTICS (1)<br>DC Current Gain hFE<br>(Ig =4.0A, Veg = 4.0V) 70<br>(lp=10A,VQ,- =4.0V)<br>Collector - Emitter Saturation Voltage Vee;sat Vv<br>(1, =4.0A, 1, =0.4A) 1.1<br>(Ig =10A, 1, =3.3A) 3.0<br>Base - Emitter On Voltage Vee(on) V<br>(io = 4.04, Veg = 4.0 V ) 1.5<br>DYNAMIC CHARACTERISTICS<br>Current Gain - Bandwidth Product (2) f, MHz<br>(Ig = 500 mA, Vo, = 10 V , f = 1.0 MHz ) 25<br>Smail-Signal Current Gain<br>(1g = 1.0A, Voge = 4.0 V, f = 1 KHz) 15 120<br>(1) Pulse Test: Pulse width = 300 ps , Duty Cycle = 2.0%<br>(2) f= [Pye] °F soe<br>2N3055,MJ2955<br>ACTIVE REGION SAFE OPERATING AREA(SOA)<br>20 we ee ee -—+- There are two limitation on the power handling<br>0 —— ~~: DN 00s \ 250u8 \ 58 ofbreakdownabreakdownaa transistor:safeaverageoperatingjunctionareasafeaverageoperatingjunctionareaaverageoperatingjunctionareaoperatingjunctionareajunctionareaarea curvestemperatureindicateandtemperatureindicateandindicateandand<br>_foNS SO A RESSSSS C S EN limits of the transistor that must be observed for<br>S yt = SSS operation i.e., the transistor must not be subjected<br>G to PRS) greater dissipation than curves dissipation than curves than curves indicate.<br>© 2 Bae XS SI The data of SOA SOA curve is base on Tyeq=200 °C:Tc on Tyeq=200 °C:Tc Tyeq=200 °C:Tc °C:Tc<br>zZ PTT) EE NS variable depending on conditions. second<br>5 SO ee Ge COE Oe ATS A ae en SA ST pulse limits are valid for duty cycles to 10%<br>G8 reee~~ —Thermaly|SOA UnitedaitT.=25°C_——— (Single Paise) tt tionTue$200°C,willTue$200°C,willwill reduceAtthehighpowercasethat temperatures,canAtthehighpowercasethat temperatures,canthehighpowercasethat temperatures,canhighpowercasethat temperatures,canpowercasethat temperatures,cancasethat temperatures,canthat temperatures,can temperatures,cancan be handlthth e rmaldd to<br>2 04aon Second Breakdoowes Limit 4 less than the limitations imposed by second breakdown. the limitations imposed by second breakdown. limitations imposed by second breakdown. imposed by second breakdown. by second breakdown. second breakdown. breakdown.<br>a2, 10 20 40 80<br>Vee , COLLECTOR EMITTER VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


There are two limitation on the power handling ability ofbreakdownabreakdownaa transistor:safeaverageoperatingjunctionareasafeaverageoperatingjunctionareaaverageoperatingjunctionareaoperatingjunctionareajunctionareaarea curvestemperatureindicateandtemperatureindicateandindicateandand second Ie-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves dissipation than curves than curves indicate. The data of SOA SOA curve is base on Tyeq=200 °C:Tc on Tyeq=200 °C:Tc Tyeq=200 °C:Tc °C:Tc is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided tionTue$200°C,willTue$200°C,willwill reduceAtthehighpowercasethat temperatures,canAtthehighpowercasethat temperatures,canthehighpowercasethat temperatures,canhighpowercasethat temperatures,canpowercasethat temperatures,cancasethat temperatures,canthat temperatures,can temperatures,cancan be handlthth **e** rmaldd to valueslimitaless than the limitations imposed by second breakdown. the limitations imposed by second breakdown. limitations imposed by second breakdown. imposed by second breakdown. by second breakdown. second breakdown. breakdown. | 

2N3055 NPN / MJ2955 PNP 

| : 

Re eee eee eeeerence NPN 2N3055 

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