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MCR8DSMT4G
Thyristor, 600 V, 12 µA, 8 A, 8 A, TO-252 (DPAK), 3 Pins
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- Manufacturer: LITTELFUSE
- Product type: Thyristors - SCRs
- Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max, Igt:12µA; Current It av:8A; On State RMS Current IT(rms):8A; Thyristor Case Style:TO-252; No. of Pins:3Pins; Peak Non Rep Surge Current I
- MSL: -
- SVHC: No SVHC (17-Dec-2014)
- No. of Pins: 3Pins
- Product Range: -
- Thyristor Mounting: Surface Mount
- Holding Current Max: 6mA
- On State RMS Current: 8A
- Thyristor Case Style: TO-252 (DPAK)
- Average On State Current: 8A
- Gate Trigger Current Max: 12µA
- Gate Trigger Voltage Max: 650mV
- Operating Temperature Max: 110°C
- Peak Non Repetitive Surge Current: 90A
- Peak Repetitive Off State Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.559 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Thyristors** Surface Mount – 600V - 800V > MCR8DSM, MCR8DSN ~~Pb ©~~ ~~MCR8DSM, MCR8DSN~~ - **Description** Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. **Features** - [Po • Small Size • Epoxy Meets UL 94 V−0 • Passivated Die for @ 0.125 in Reliability and Uniformity • ESD Ratings: Human - • Low Level Triggering and Body Model, 3B > 8000 V Holding Characteristics Machine Model, C > 400V - • Available in Two Package • Pb−Free Packages are Styles Surface Mount Available Lead Form − Case 369C - ~~[Po~~ Miniature Plastic Package − Straight Leads − Case 369 **==> picture [504 x 117] intentionally omitted <==** **----- Start of picture text -----**<br> Pin Out Functional Diagram<br>eee<br>G<br>A K<br>4 re<br>1 [2]<br>3<br>**----- End of picture text -----**<br> **==> picture [244 x 71] intentionally omitted <==** **----- Start of picture text -----**<br> Additional Information<br>Po<br>S<br>Datasheet Resources Samples<br>**----- End of picture text -----**<br> © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/23/19 **Thyristors** Surface Mount – 600V - 800V > MCR8DSM, MCR8DSN **==> picture [93 x 32] intentionally omitted <==** **==> picture [506 x 448] intentionally omitted <==** **----- Start of picture text -----**<br> Maximum Ratings (TJ = 25°C unless otherwise noted)<br>Rating Symbol Value Unit<br>Peak Repetitive Off−State Voltage (Note 1) MCR8DSM VDRM, 600 V<br>(TJ=-40 to 110ºC, Sine Wave, 50 to 60 Hz) MCR8DSN VRRM 800<br>On-State RMS Current (180° Conduction Angles; TC = 90°C) IT (RMS) 8.0 A<br>Average On−State Current (180° Conduction Angles; TC = 90°C) IT(AV) 5.1 A<br>Peak Non-Repetitive Surge Current(1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C) ITSM 90 A<br>Circuit Fusing Consideration (t = 8.3 ms) I [2] t 34 A²sec<br>Forward Peak Gate Power (Pulse Width ≤ 10 µsec,TC = 90°C) PGM 5.0 W<br>Forward Average Gate Power (t = 8.3 msec, TC = 90°C) PGM (AV) 0.5 W<br>Forward Peak Gate Current (Pulse Width ≤ 10 µsec, TC= 90°C) IGM 2.0 A<br>Operating Junction Temperature Range TJ -40 to 110 °C<br>Storage Temperature Range Tstg -40 to 150 °C<br>Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is<br>not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.<br>1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent<br>with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.<br>Thermal Characteristics<br>Rating Symbol Value Unit<br>Thermal Resistance, Junction−to−Case R Ɵ JC 2.2<br>°C/W<br>Thermal Resistance, Junction−to−Ambient R Ɵ JA 88<br>Thermal Resistance, Junction−to−Ambient (Note 2) R Ɵ JA 80<br>Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds TL 260 °C<br>Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted)<br>Characteristic Symbol Min Typ Max Unit<br>Peak Repetitive Forward or Reverse Blocking Current (Note 3) (VAK = Rated VDRM or VRRM, RGK = 1.0 kΩ TTJJ = 110°C = 25°C IIDRMRRM, -- -- 50010 µA<br>Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)<br>**----- End of picture text -----**<br> **==> picture [505 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> Characteristic Symbol Min Typ Max Unit<br>Peak Reverse Gate Blocking Voltage (IGR = 10 µA) VGRM 10 12.5 18 V<br>Peak Reverse Gate Blocking Current (VGR = 10 V) IRGM − − 1.2 µA<br>Peak Forward On−State Voltage (Note 4) (ITM = 16 A) VTM − 1.4 1.8 V<br>Gate Trigger Current (Continuous dc) (Note 5) (VAK = 12 Vdc, RL = 100 Ω) (T (TJ = −40°C)J = 25°C) IGT 5.0_ 12_ 200300 µA<br>Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) (Note 5) (T ( T(TJ J = −40°C)J = 110°C)= 25°C) VGT 0.450.2_ 0.65__ 1.01.5_ V<br>Holding Current (VD = 12 V, Initiating Current = 200 mA, RGK = 1 kΩ) (T( TJ J = −40°C)= 25°C) IH 0.5_ 1.0_ 6.010 mA<br>Latching Current(VD = 12 V, IG = 2.0 mA, RGK = 1 kΩ) (T (TJ = −40°C)J = 25°C) IL 0.5− 1.0_ 6.010 mA<br>Total Turn−On Time<br>(Source Voltage = 12 V, RS = 6.0 kΩ, IT = 16 A(pk), RGK = 1.0 kΩ) (VD = Rated VDRM, tgt _ 2.0 5.0 µs<br>Rise Time = 20 ns, Pulse Width = 10 µs)<br>**----- End of picture text -----**<br> © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/23/19 **Thyristors** Surface Mount – 600V - 800V > MCR8DSM, MCR8DSN **==> picture [93 x 32] intentionally omitted <==** |**Dynamic Characteristics**|||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |Critical Rate of Rise of Off−State Voltage<br>(VD= 0.67 X Rated VDRM, Exponential Waveform, RGK= 1.0 kΩ, TJ= 110°C)|dv/dt|2.0|10|−|V/µs| 2. Surface mounted on minimum recommended pad size. 3. Ratings apply for negative gate voltage or RGK = 1.0 kQ. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 4. Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. 5. RGK current not included in measurements. ## **Voltage Current Characteristic of SCR** **==> picture [244 x 103] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Parameter<br>VDRM Peak Repetitive Forward Off State Voltage<br>IDRM Peak Forward Blocking Current<br>VRRM Peak Repetitive Reverse Off State Voltage<br>IRRM Peak Reverse Blocking Current<br>VTM Maximum On State Voltage<br>IH Holding Current<br>**----- End of picture text -----**<br> **==> picture [243 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 1. Average Current Derating<br>**----- End of picture text -----**<br> **==> picture [244 x 170] intentionally omitted <==** **==> picture [244 x 373] intentionally omitted <==** **----- Start of picture text -----**<br> +C urrent<br>Anode +<br>VTM<br>on state<br>IRRM at VRRM IH<br>+V oltage<br>Reverse Blocking Region IDRM at VDRM<br>(off state) Forward Blocking Region<br>Reverse Avalanche Region (off state)<br>Anode<br>Figure 2. On−State Power Dissipation<br>12<br>10<br>180°<br>8.0 = Conduction 90° 120°<br>Angle dc<br>6.0 60°<br> = 30°<br>4.0<br>2.0<br>0<br>0 1.0 2.0 3.0 4.0 5.0 6.0<br>IT(AV), AVERAGE ON-STATE CURRENT (AMPS)<br>)AVERAGE POWER DISSI PATION (WATTS(AV),<br>P<br>**----- End of picture text -----**<br> © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/23/19 **Thyristors** Surface Mount – 600V - 800V > MCR8DSM, MCR8DSN **==> picture [93 x 32] intentionally omitted <==** **==> picture [243 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 3. On−State Characteristics<br>**----- End of picture text -----**<br> **==> picture [244 x 170] intentionally omitted <==** **==> picture [244 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 4. Transient Thermal Response<br>1.0<br>0.1<br>Z JC(t) [ = R] JC(t) [r(t)]<br>0.01<br>0.1 1.0 10 100 1000 10 K<br>t, TIME (ms)<br>(NORMALIZED)<br>TRANSIENT THERMAL RESISTANCE<br>r(t),<br>**----- End of picture text -----**<br> **Figure 5. Typical Gate Trigger Current vs Junction Temperature** **==> picture [244 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 6. Typical Gate Trigger Voltage vs Junction Temperature<br>**----- End of picture text -----**<br> **==> picture [505 x 171] intentionally omitted <==** **Figure 7. Typical Holding Current vs Junction Temperature** **Figure 8. Typical Latching Current vs Junction Temperature** **==> picture [505 x 170] intentionally omitted <==** © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/23/19 **Thyristors** Surface Mount – 600V - 800V > MCR8DSM, MCR8DSN **==> picture [93 x 32] intentionally omitted <==** **==> picture [244 x 430] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 9. Holding Current versus Gate−Cathode Resistance<br>10<br>TJ = 25°C<br>8.0<br>6.0<br>IGT = 25 A<br>4.0<br>2.0 IGT = 10 A<br>0<br>100 1000 10 K<br>RGK, GATE-CATHODE RESISTANCE (OHMS)<br>Figure 11. Exponential Static dv/dt vs Gate−Cathode<br> Resistance and Peak Voltage<br>1000<br>TJ = 110°C<br>400 V<br>100<br>600 V<br>VPK = 800 V<br>10<br>1.0<br>100 1000<br>R , GATE-CATHODE RESISTANCE (OHMS)<br>, HOLDING CURRENT (mA)<br>H<br>I<br>STATIC dv/dt (V/ s)<br>**----- End of picture text -----**<br> **==> picture [244 x 430] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 10. Exponential Static dv/dt vs Gate−Cathode<br> Resistance and Junction Temperature<br>1000<br>70°C<br>100<br>90°C<br>TJ = 110°C<br>10<br>1.0<br>100 1000<br>RGK, GATE-CATHODE RESISTANCE (OHMS)<br>Figure 12. Exponential Static dv/dt vs Gate−Cathode<br> Resistance and Gate Trigger Current Sensitivity<br>1000<br>VD = 800 V<br>TJ = 110°C<br>100<br>IGT = 25 A<br>IGT = 10 A<br>10<br>1.0<br>100 1000<br>RGK, GATE-CATHODE RESISTANCE (OHMS)<br>STATIC dv/dt (V/ s)<br>STATIC dv/dt (V/ s)<br>**----- End of picture text -----**<br> © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/23/19 **Thyristors** Surface Mount – 600V - 800V > MCR8DSM, MCR8DSN **==> picture [93 x 32] intentionally omitted <==** **==> picture [245 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Dimensions<br>**----- End of picture text -----**<br> **==> picture [242 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>E C<br>A<br>b3 B c2<br>4<br>L3 Z Z<br>D Detail A H<br>12 3<br>L4 NOTE 7<br>b2 c Bottom View Bottom View<br>e Side View Alternate<br>b Construction<br>Top View 0.005 (0).13 M C H<br>L2 GAUGEPLANE C Seating<br>Plane<br>L<br>A1<br>L1<br>Detail A<br>Rotated 90°C W<br>**----- End of picture text -----**<br> **==> picture [245 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> Inches Millimeters<br>Dim<br>Min Max Min Max<br>A 0.087 0.094 2.20 2.40<br>A1 0.000 0.005 0.00 0.12<br>b 0.022 0.030 0.55 0.75<br>b2 0.026 0.033 0.65 0.85<br>b3 0.209 0.217 5.30 5.50<br>c 0.019 0.023 0.49 0.59<br>c2 0.019 0.023 0.49 0.59<br>D 0.213 0.224 5.40 5.70<br>E 0.252 0.260 6.40 6.60<br>e 0.091 2.30<br>H 0.374 0.406 9.50 10.30<br>L 0.058 0.070 1.47 1.78<br>L1 0.114 2.90<br>L2 0.020 0.51<br>L3 0.053 0.065 1.35 1.65<br>L4 0.028 0.039 0.70 1.00<br>Z 0.154 - 3.90 -<br>**----- End of picture text -----**<br> 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 **==> picture [245 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Soldering Footprint<br>**----- End of picture text -----**<br> **==> picture [244 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> 6.20 3.00<br>0.244 0.118<br>2.58<br>0.102<br>5.80<br>1.60 6.17<br>0.228<br>0.063 0.243<br>SCALE 3: 1 mm<br>inches<br>Part Marking System<br>**----- End of picture text -----**<br> **==> picture [176 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>DPAK-3 CR<br>Case 369C 8DSxG<br>1 [2] Style 6 YMAXX<br>3<br>CR8DSx =Device Code<br>x =D, M, or N<br>Y =Year<br>M =Month<br>A =Assembly Site<br>XX =Lot Serial Code<br>G =Pb-Free Package<br>**----- End of picture text -----**<br> |||**Pin Assignment**| |---|---|---| ||1|Cathode| ||2|Anode| ||3|Gate| ||4|Anode| ## **Ordering Information** **==> picture [244 x 89] intentionally omitted <==** **----- Start of picture text -----**<br> Device Package Shipping<br>MCR8DSMT4 DPAK<br>DPAK<br>MCR8DSMT4G<br>(Pb−Free)<br>2500/Tape & Reel<br>MCR8DSNT4 DPAK<br>DPAK<br>MCR8DSNT4G<br>(Pb−Free)<br>**----- End of picture text -----**<br> **Disclaimer Notice -** Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/23/19
Updated at June 10, 2026
Founded in 1927 and headquartered in Chicago, Illinois, Littelfuse is a premier global manufacturer of circuit protection, power control, and sensing technologies. Widely recognized for pioneering the first small, fast-acting protective fuse, the company has grown into an industry leader whose highly reliable components are essential to modern industrial, transportation, and consumer electronics applications worldwide. At the core of the Littelfuse portfolio is an expansive and industry-leading range of circuit protection solutions. This encompasses a massive selection of traditional fuses, fuse holders, and resettable PTC thermistor fuses designed to safely interrupt overcurrent conditions. To defend against electrical overstress, Littelfuse also provides advanced transient voltage suppression (TVS) technologies, including thousands of specialized TVS diodes, TVS varistors, and gas discharge tubes (GDTs) that ensure robust defense against voltage spikes and environmental hazards. Beyond its foundational protection components, Littelfuse manufactures a diverse array of discrete semiconductors, sensors, and switching devices. Engineers rely on their high-performance thyristors, including TRIACs and SCRs, alongside power-efficient Schottky diodes and MOSFETs for demanding power control applications. Complemented by precision proximity sensors and highly reliable reed and solid-state relays, Littelfuse delivers the critical building blocks required for secure, efficient, and complete system design.
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