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MCR8DCMT4G
Thyristor, 600 V, 15 mA, 5.1 A, 8 A, TO-252 (DPAK), 4 Pins
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- Manufacturer: LITTELFUSE
- Product type: Thyristors - SCRs
- Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max, Igt:15mA; Current It av:5.1A; On State RMS Current IT(rms):8A; Thyristor Case Style:TO-252; No. of Pins:4Pins; Peak
- MSL: MSL 1 - Unlimited
- SVHC: To Be Advised
- No. of Pins: 4Pins
- Product Range: MCR8DCx
- Thyristor Mounting: Surface Mount
- Holding Current Max: 30mA
- On State RMS Current: 8A
- Thyristor Case Style: TO-252 (DPAK)
- Average On State Current: 5.1A
- Gate Trigger Current Max: 15mA
- Gate Trigger Voltage Max: 1V
- Operating Temperature Max: 125°C
- Peak Non Repetitive Surge Current: -
- Peak Repetitive Off State Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.559 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
- **Thyristors** - Expertise Applied | Answers Delivered Surface Mount – 600V - 800V > MCR8DCM, MCR8DCN ~~Pb~~ - MCR8DCM, MCR8DCN ~~@~~ **Description** Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. **Features** - • Small Size Body Model, 3B > 8000 V • Passivated Die for Machine Model, C > 400 V Reliability and Uniformity • Pb−Free Packages are - • Low Level Triggering and Available Holding Characteristics - • Available in Two Package Styles Surface Mount Lead Form − Case 369C - • Epoxy Meets UL 94 V−0 @ 0.125 in - my ~~a~~ • ESD Ratings: Human - **Pin Out Functional Diagram** - 7, 4 **G** - **A K** - 1 2 3 - 2» he **Additional Information** = - **Datasheet Resources Samples** © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19 **Thyristors** Surface Mount – 600V - 800V > MCR8DCM, MCR8DCN **==> picture [93 x 32] intentionally omitted <==** **==> picture [506 x 633] intentionally omitted <==** **----- Start of picture text -----**<br> Maximum Ratings (TJ = 25°C unless otherwise noted)<br>Rating Symbol Value Unit<br>Peak Repetitive Off−State Voltage (Note 1) MCR8DCM VDRM, 600 V<br>(− 40 to 1125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR8DCN VRRM 800<br>On-State RMS Current (180ºConduction Angles; TC = 105°C) IT (RMS) 8.0 A<br>Average On−State Current (180° Conduction Angles; TC = 105°C) IT(AV) 5.1 A<br>Peak Non-Repetitive Surge Current(1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C) ITSM 80 A<br>Circuit Fusing Consideration (t = 8.3 ms) I [2] t 26 A²sec<br>Forward Peak Gate Power (Pulse Width ≤ 10 µsec,TC = 105°C) PGM 5.0 W<br>Forward Average Gate Power (t = 8.3 msec, TC = 105°C) PGM (AV) 0.5 W<br>Forward Peak Gate Current (Pulse Width ≤ 1.0 µsec, TC= 105°C) IGM 2.0 A<br>Operating Junction Temperature Range TJ -40 to 125 °C<br>Storage Temperature Range Tstg -40 to 150 °C<br>Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is<br>not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.<br>1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent<br>with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.<br>Thermal Characteristics<br>Rating Symbol Value Unit<br>Thermal Resistance, Junction−to−Case R Ɵ JC 2.2<br>°C/W<br>Thermal Resistance, Junction−to−Ambient R Ɵ JA 88<br>Thermal Resistance, Junction−to−Ambient (Note 2) R Ɵ JA 80<br>Maximum Device Temperature for Soldering Purposes (Note 3) TL 260 °C<br>Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted)<br>Characteristic Symbol Min Typ Max Unit<br>Peak Repetitive Forward or Reverse Blocking Current (Note 3) TJ = 25°C IDRM, - - 0.01 mA<br>(VAK = Rated VDRM or VRRM, RGK = 1.0 kΩ TJ = 125°C IRRM - - 5.0<br>Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)<br>Characteristic Symbol Min Typ Max Unit<br>Peak On−State Voltage (Note 4) (ITM = 16 A) VTM – 1.4 1.8 V<br>Gate Trigger Current (Continuous dc) (Note 5) (VAK = 12 Vdc, RL = 100 Ω) (T(TJ J = −40°C)= 25°C) IGT 2.0_ 7.0_ 3015 µA<br>Gate Trigger Voltage (Continuous dc) ( TJ = 25°C) 0.5 0.65 1.0<br>(VD = 12 V, RL = 100 Ω) (TJ = −40°C) VGT _ _ 2.0 V<br>(VD = 12 V, RL = 100 Ω) (Note 5) (TJ = 125°C) 0.2 _ _<br>Holding Current ( TJ = 25°C) 4.0 22 30 mA<br>(VD = 12 V, Initiating Current = 200 mA, RGK = 1 kΩ) (TJ = −40°C) IH _ _ 60<br>Latching Current(VD = 12 V, IG = 2.0 mA, RGK = 1 kΩ) (T(TJ = −40°C)J = 25°C) IL 4.0− 22_ 3060 mA<br>Dynamic Characteristics<br>Characteristic Symbol Min Typ Max Unit<br>Critical Rate of Rise of Off−State Voltage(VAK = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125ºC) dv/dt 50 200 − V/µs<br>Critical Rate of Rise of On−State Current di/dt − − 50 A/ms<br>(IPK = 50 A, Pw = 40 sec, diG/dt = 1 A/sec, Igt = 50 mA<br>**----- End of picture text -----**<br> 2. Surface mounted on minimum recommended pad size. - 3 1/8" from case for 10 seconds. 4. Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19 **Thyristors** Surface Mount – 600V - 800V > MCR8DCM, MCR8DCN **==> picture [93 x 32] intentionally omitted <==** ## **Voltage Current Characteristic of SCR** **==> picture [245 x 103] intentionally omitted <==** **----- Start of picture text -----**<br> Symbol Parameter<br>VDRM Peak Repetitive Forward Off State Voltage<br>IDRM Peak Forward Blocking Current<br>VRRM Peak Repetitive Reverse Off State Voltage<br>IRRM Peak Reverse Blocking Current<br>VTM Maximum On State Voltage<br>IH Holding Current<br>**----- End of picture text -----**<br> **==> picture [243 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 1. Average Current Derating<br>**----- End of picture text -----**<br> **==> picture [244 x 171] intentionally omitted <==** **Figure 3. On−State Characteristics** **==> picture [244 x 171] intentionally omitted <==** **==> picture [244 x 539] intentionally omitted <==** **----- Start of picture text -----**<br> +Current<br>VTM Quadrant 1Main Terminal 2+<br>On State<br>IRRM at VRRM IH<br>Off State +Voltage<br>IH IDRM at VDRM<br>Quadrant 3Main Terminal 2- VTM<br>Figure 2. On−State Power Dissipation<br>12<br>10<br>180°<br>8.0 = Conduction 90° 120°<br>Angle dc<br>6.0 60°<br> = 30°<br>4.0<br>2.0<br>0<br>0 0.1 0.2 0.3 4.0 5.0 0.6<br>IT(AV), AVERAGE ON-STATE CURRENT (AMPS)<br>Figure 4. Transient Thermal Response<br>1.0<br>0.1<br>Z JC(t) [ = R] JC(t) [r(t)]<br>0.01<br>0.1 1.0 10 100 1000 10 K<br>t, TIME (ms)<br>, AVERAGE POWER DISSI PATION (WATTS)<br>(AV)<br>P<br>(NORMALIZED)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19 **Thyristors** Surface Mount – 600V - 800V > MCR8DCM, MCR8DCN **==> picture [93 x 32] intentionally omitted <==** **==> picture [243 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 5. Typical Gate Trigger Current vs Junction Temperature<br>**----- End of picture text -----**<br> **==> picture [244 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 6. Typical Gate Trigger Voltage vs Junction Temperature<br>**----- End of picture text -----**<br> **==> picture [504 x 172] intentionally omitted <==** **Figure 7. Typical Holding Current vs Junction Temperature** **==> picture [244 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 8. Typical Latching Current vs Junction Temperature<br>**----- End of picture text -----**<br> **==> picture [504 x 171] intentionally omitted <==** **Figure 9. Exponential Static dv/dt vs Gate−Cathode Resistance** **==> picture [243 x 171] intentionally omitted <==** © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19 **Thyristors** Surface Mount – 600V - 800V > MCR8DCM, MCR8DCN **==> picture [93 x 32] intentionally omitted <==** **==> picture [244 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Dimensions<br>**----- End of picture text -----**<br> **==> picture [242 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>E C<br>A<br>b3 B c2<br>4<br>L3 Z Z<br>D Detail A H<br>12 3<br>L4 NOTE 7<br>b2 c Bottom View Bottom View<br>e Side View Alternate<br>b Construction<br>Top View 0.005 (0).13 M C H<br>L2 GAUGEPLANE C Seating<br>Plane<br>L<br>A1<br>L1<br>Detail A<br>Rotated 90°C W<br>**----- End of picture text -----**<br> **==> picture [245 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> Inches Millimeters<br>Dim<br>Min Max Min Max<br>A 0.087 0.094 2.20 2.40<br>A1 0.000 0.005 0.00 0.12<br>b 0.022 0.030 0.55 0.75<br>b2 0.026 0.033 0.65 0.85<br>b3 0.209 0.217 5.30 5.50<br>c 0.019 0.023 0.49 0.59<br>c2 0.019 0.023 0.49 0.59<br>D 0.213 0.224 5.40 5.70<br>E 0.252 0.260 6.40 6.60<br>e 0.091 2.30<br>H 0.374 0.406 9.50 10.30<br>L 0.058 0.070 1.47 1.78<br>L1 0.114 2.90<br>L2 0.019 0.023 0.49 0.59<br>L3 0.053 0.065 1.35 1.65<br>L4 0.028 0.039 0.70 1.00<br>Z 0.154 - 3.90 -<br>**----- End of picture text -----**<br> 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ## **Soldering Footprint** **==> picture [184 x 112] intentionally omitted <==** **----- Start of picture text -----**<br> 6.20 3.00<br>0.244 0.118<br>2.58<br>0.102<br>5.80<br>1.60 6.17<br>0.228<br>0.063 0.243<br>SCALE 3: 1 mm<br>inches<br>**----- End of picture text -----**<br> ## **Part Marking System** **==> picture [176 x 92] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>DPAK-3 CR<br>Case 369C 8DCxG<br>1 [2] Style 4 YMAXX<br>3<br>Y =Year<br>M =Month<br>A =Assembly Site<br>AKA =Diode Polarity<br>G =Pb-Free Package<br>**----- End of picture text -----**<br> |||**Pin Assignment**| |---|---|---| ||1|Cathode| ||2|Anode| ||3|Gate| ||4|Anode| ||**Ordering Information**|**Ordering Information**|| |---|---|---|---| ||**Device**|**Package**|**Shipping**| ||MCR8DSMT4|DPAK|| ||MCR8DCMT4G|DPAK<br>(Pb−Free)|2500 /| ||MCR8DCNT4|DPAK|Tape & Reel| ||MCR8DCNT4G|DPAK<br>(Pb−Free)|| **Disclaimer Notice** - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19
Updated at June 10, 2026
Founded in 1927 and headquartered in Chicago, Illinois, Littelfuse is a premier global manufacturer of circuit protection, power control, and sensing technologies. Widely recognized for pioneering the first small, fast-acting protective fuse, the company has grown into an industry leader whose highly reliable components are essential to modern industrial, transportation, and consumer electronics applications worldwide. At the core of the Littelfuse portfolio is an expansive and industry-leading range of circuit protection solutions. This encompasses a massive selection of traditional fuses, fuse holders, and resettable PTC thermistor fuses designed to safely interrupt overcurrent conditions. To defend against electrical overstress, Littelfuse also provides advanced transient voltage suppression (TVS) technologies, including thousands of specialized TVS diodes, TVS varistors, and gas discharge tubes (GDTs) that ensure robust defense against voltage spikes and environmental hazards. Beyond its foundational protection components, Littelfuse manufactures a diverse array of discrete semiconductors, sensors, and switching devices. Engineers rely on their high-performance thyristors, including TRIACs and SCRs, alongside power-efficient Schottky diodes and MOSFETs for demanding power control applications. Complemented by precision proximity sensors and highly reliable reed and solid-state relays, Littelfuse delivers the critical building blocks required for secure, efficient, and complete system design.
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