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MCR69-3G
Thyristor, 100 V, 30 mA, 25 A, 25 A, TO-220AB, 3 Pins
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- Manufacturer: LITTELFUSE
- Product type: Thyristors - SCRs
- Peak Repetitive Off-State Voltage, Vdrm:100V; Gate Trigger Current Max, Igt:30mA; Current It av:25A; On State RMS Current IT(rms):25A; Thyristor Case Style:TO-220AB; No. of Pins:3Pins; Peak Non Rep Sur
- MSL: -
- SVHC: No SVHC (17-Dec-2014)
- No. of Pins: 3Pins
- Product Range: -
- Thyristor Mounting: Through Hole
- Holding Current Max: 50mA
- On State RMS Current: 25A
- Thyristor Case Style: TO-220AB
- Average On State Current: 25A
- Gate Trigger Current Max: 30mA
- Gate Trigger Voltage Max: 1.5V
- Operating Temperature Max: 125°C
- Peak Non Repetitive Surge Current: 300A
- Peak Repetitive Off State Voltage: 100V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.15 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
Thyristors **Datasheet** ## **MCR69-2, MCR69-3** Silicon Controlled Rectifiers – 400V - 800V **==> picture [9 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> Pb<br>**----- End of picture text -----**<br> ## **Description** Designed for overvoltage protection in crowbar circuits. ## **Features & Benefits** - Glass-Passivated Junctions ■ High Capacitor Discharge for Greater Parameter Current, 750 Amps Stability and Reliability ■ Pb−Free Packages are - ■ Center-Gate Geometry for Available Uniform Current Spreading Enabling High Discharge Current ## **Additional Information** - Small Rugged, Thermowatt Package Constructed for Low Thermal Resistance and Maximum Power Dissipation and Durability **==> picture [33 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Pin Out<br>**----- End of picture text -----**<br> **==> picture [198 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Resources Accessories Samples<br>**----- End of picture text -----**<br> **==> picture [136 x 43] intentionally omitted <==** **----- Start of picture text -----**<br> Functional Diagram<br>G<br>A K<br>**----- End of picture text -----**<br> **==> picture [103 x 88] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>TO-220AB<br>Case 221A<br>Style 3<br>1<br>2<br>3<br>**----- End of picture text -----**<br> © 2021 Littelfuse, Inc. **1** Specifications are subject to change without notice. ~~~SCSCt~~ © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 05/21/21 Thyristors **Datasheet** **MCR69-2, MCR69-3** Silicon Controlled Rectifiers – 400V - 800V **Maximum Ratings** (TJ = 25°C unless otherwise noted) |**Rating**<br>Peak Repetitive Off-State Voltage (Note 1)<br>(TJ= -40 to +125°C, Gate Open)|**Part Number**<br>MCR169-2<br>MCR69-3|**Symbol**<br>VDRM,<br>VRRM|**Value**<br>50<br>100|**Unit**<br>V| |---|---|---|---|---| |Peak Discharge Current (Note 2)||ITM|750|A| |On-State RMS Current (180° Conduction Angles; TC= 85°C)||IT (RMS)|25|A| |Average On-State Current (180° Conduction Angles; TC= 80°C)||IT(AV)|16|A| |Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ= 125°C)||ITSM|300|A| |Circuit Fusing Considerations (t = 8.3 ms)||I2t|375|A2sec| |Forward Peak Gate Current (t ≤ 1.0 µs, TC= 85°C)||IGM|2.0|A| |Forward Peak Gate Power (t ≤ 1.0μs, TC= 85°C)||PGM|20|W| |Operating Junction Temperature Range||TJ|-40 to +125|°C| |Storage Temperature Range||Tstg|-40 to +150|°C| |Mounting Torque||–|8.0|in. lb.| Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limitsare exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall - not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. - 2. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various duration of an exponentially decaying current waveform, tw is defined as 5 time constants of an exponentially decaying current pulse. 3. Test Conditions: IG = 150 mA, VD = Rated VDRM, ITM = Rated Value, TJ = 125°C. ## **Thermal Characteristics** |**Characterstic**<br>Thermal Resistance, Junction-to-Case|**Symbol**<br>RƟJC|**Value**<br>1.5|**Unit**<br>°C/W| |---|---|---|---| |Thermal Resistance, Junction-to-Ambient|RƟJA|60|| |Maximum Lead Temperature for Soldering Purposes, 1/8” from<br>case for 10 seconds|TL|260|°C| **Electrical Characteristics - OFF** (TJ = 25°C unless otherwise noted) |**Characteristic**<br>Peak Repetitive Forward or Reverse Blocking Current<br>(VAK= VDRM= VRRM; Gate Open)<br>TJ= 25°C<br>TJ= 125°C|**Characteristic**<br>Peak Repetitive Forward or Reverse Blocking Current<br>(VAK= VDRM= VRRM; Gate Open)<br>TJ= 25°C<br>TJ= 125°C|**Symbol**<br>IDRM<br>IRRM|**Min**<br>-|**Typ**<br>-|**Max**<br>10|**Unit**<br>µA| |---|---|---|---|---|---|---| ||TJ= 125°C||-|-|2.0|mA| ## **Electrical Characteristics - ON** |**Characteristic**<br>Peak Forward On−State Voltage<br>(Note 4) (ITM= 50 A)<br>(ITM= 750 A, tw = 1 ms)<br>(Note 5)|**Characteristic**<br>Peak Forward On−State Voltage<br>(Note 4) (ITM= 50 A)<br>(ITM= 750 A, tw = 1 ms)<br>(Note 5)|**Symbol**<br>VTM|**Min**<br>−|**Typ**<br>–|**Max**<br>1.8|**Unit**<br>V| |---|---|---|---|---|---|---| ||(ITM= 750 A, tw = 1 ms)<br>(Note 5)||−|6.0|−|| |Gate Trigger Current (Continuous dc) (VD= 12 V, RL= 100 Ω)||IGT|2.0|7.0|30|mA| |Gate Trigger Voltage (Continuous dc) (VD= 12 Vdc, RL= 100 Ω)||VGT|−|0.65|1.5|V| |Gate Non-Trigger Voltage (Continuous dc) (VD= 12 Vdc, RL= 100 Ω, TJ= 125ºC)||VGD|0.2|0.40|–|V| |Holding Current (VD= 12 Vdc, Initiating Current = 200 mA, Gate Open)||IH|3.0|15|50|mA| |Latch Current (VD= 12 VDC, IG= 150 mA)||IL|–|–|60|mA| |Gate Controlled Turn-On Time (Note 6) (VD= Rated VDRM, IG= 150 mA)<br>(ITM= 50 A Peak)||tgt|–|1.0|–|µs| © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 05/21/21 **2** Thyristors **Datasheet** **MCR69-2, MCR69-3** Silicon Controlled Rectifiers – 400V - 800V ## **Dynamic Characteristics** |**Characteristic**<br>Critical Rate−of−Rise of Off-State Voltage (VD= Rated VDRM, Exponential Waveform, Gate Open, TJ= 125°C)|**Symbol**<br>= 125°C)<br>dv/dt|**Symbol**<br>**Min**<br>10|**Typ**<br>–|**Typ**<br>**Max**<br>−|**Unit**<br>V/µs| |---|---|---|---|---|---| |Critical Rate of Rise of On−State Current IG= 150 mA , TJ= 125°C|di/dt|–|–|100|A/µs| 4. Pulse duration ≤ 300 µs, duty cycle ≤ 2%. 5. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various durations of an exponentially decaying current waveform. tw is defined as 5 time constants of an exponentially decaying current pulse. 6. The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance. ## **Voltage Current Characteristic of SCR** |**Symbol**<br>VDRM|**Parameter**<br>Peak Repetitive Forward Off State Voltage| |---|---| |IDRM|Peak Forward Blocking Current| |VRRM|Peak Repetitive Reverse Off State Voltage| |IRRM|Peak Reverse Blocking Current| |VTM|Maximum On State Voltage| |IH|Holding Current| **Figure 1.** Typical RMS Current Derating **Figure 2.** Peak Capacitor Discharge Current Derating **Figure 3.** Current Derating **Figure 4.** Maximum Power Dissipation © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 05/21/21 **3** Thyristors **Datasheet** ## **MCR69-2, MCR69-3** Silicon Controlled Rectifiers – 400V - 800V **Figure 5.** Thermal Response **==> picture [464 x 155] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.7<br>0.5 aa<br>0.20.3 aPT a aeeeer ee<br>a TTT Teer PT TET ET ET<br>Z JC(t) [ = R] JC [ • r(t][)]<br>0.1<br>pt fta |ea ce gg e e eee<br>0.07 a ee<br>0.05 poof>tom TT Tte ee eee ee<br>0.03 Lat ft tT Pitty<br>0.02 Pty eye<br>0.01 || ft tT TtT P T Petit?T TTPPTTTPTytET TTT PT TTT<br>TT TUT FT PTY PE EE EE ET EE<br>0.1 0.2 05. 3 01. 23 5 10 20 3 0 50 1 0 2 0 3 0 50 1 k 2 k k 3k 5 10 k<br>t, TIME (ms)<br>)r(t), TRANSIENT THERMAL RESISTANCE( NORMALIZED<br>**----- End of picture text -----**<br> **Figure 6.** Gate Trigger Current **Figure 7.** Gate Trigger Voltage **Figure 8.** Holding Current © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 05/21/21 **4** Thyristors **Datasheet** ## **MCR69-2, MCR69-3** Silicon Controlled Rectifiers – 400V - 800V ## **Dimensions** ## **Part Marking System** **==> picture [434 x 147] intentionally omitted <==** **----- Start of picture text -----**<br> B F C<br>T<br>S<br>4<br>4<br>Q A<br>12 3 U TO-220AB<br>Case 221A YMAXX<br>H K Style 3 MCR69xAKA<br>Z<br>1<br>L R 2 3<br>V Lo I J i MCR69Y =Device Code=Year mn<br>G M =Month<br>D A =Assembly Site<br>AKA =Diode Polarity<br>PE N G =Pb-Free Package<br>**----- End of picture text -----**<br> |**Dim**<br>**A**|**Inches**|**Inches**|**Millimeters**|**Millimeters**| |---|---|---|---|---| ||**Min**<br>0.590|**Max**<br>0.620|**Min**<br>14.99|**Max**<br>15.75| |**B**|0.380|0.420|9.65|10.67| |**C**|0.178|0.188|4.52|4.78| |**D**|0.025|0.035|0.64|0.89| |**F**|0.142|0.147|3.61|3.73| |**G**|0.095|0.105|2.41|2.67| |**H**|0.110|0.130|2.79|3.30| |**J**|0.018|0.024|0.46|0.61| |**K**|0.540|0.575|13.72|14.61| |**L**|0.060|0.075|1.52|1.91| |**N**|0.195|0.205|4.95|5.21| |**Q**|0.105|0.115|2.67|2.92| |**R**|0.085|0.095|2.16|2.41| |**S**|0.045|0.060|1.14|1.52| |**T**|0.235|0.255|5.97|6.47| |**U**|0.000|0.050|0.00|1.27| |**V**|0.045|---|1.15|---| |**Z**|---|0.080|---|2.04| ||**Pin Assignment**| |---|---| |1|Cathode| |2|Anode| |3|Gate| |4|Anode| ## **Ordering Information** |**Device**<br>MCR69-2|**Package**<br>TO-220AB|**Shipping**<br>1000 / Box| |---|---|---| |MCR69-2G|TO-220AB<br>(Lead-Free)|| |MCR69-3|TO-220AB|| |MCR69-3G|TO-220AB<br>(Lead-Free)|| 1. Dimensioning and tolerancing per ansi y14.5m, 1982. 2. Controlling dimension: inch. 3. Dimension z defines a zone where all body and lead irregularities are allowed. **Disclaimer Notice** - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc. Specifications are subject to change without notice. Revised: GD. 05/21/21 **5**
Updated at June 10, 2026
Founded in 1927 and headquartered in Chicago, Illinois, Littelfuse is a premier global manufacturer of circuit protection, power control, and sensing technologies. Widely recognized for pioneering the first small, fast-acting protective fuse, the company has grown into an industry leader whose highly reliable components are essential to modern industrial, transportation, and consumer electronics applications worldwide. At the core of the Littelfuse portfolio is an expansive and industry-leading range of circuit protection solutions. This encompasses a massive selection of traditional fuses, fuse holders, and resettable PTC thermistor fuses designed to safely interrupt overcurrent conditions. To defend against electrical overstress, Littelfuse also provides advanced transient voltage suppression (TVS) technologies, including thousands of specialized TVS diodes, TVS varistors, and gas discharge tubes (GDTs) that ensure robust defense against voltage spikes and environmental hazards. Beyond its foundational protection components, Littelfuse manufactures a diverse array of discrete semiconductors, sensors, and switching devices. Engineers rely on their high-performance thyristors, including TRIACs and SCRs, alongside power-efficient Schottky diodes and MOSFETs for demanding power control applications. Complemented by precision proximity sensors and highly reliable reed and solid-state relays, Littelfuse delivers the critical building blocks required for secure, efficient, and complete system design.
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