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MBRF2045CTG
Schottky Rectifier, 45 V, 20 A, Dual Common Cathode, TO-220FP, 3 Pins, 840 mV
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- Manufacturer: ONSEMI
- Product type: Schottky Rectifier Diodes
- No. of Pins: 3Pins
- Diode Mounting: Through Hole
- Diode Case Style: TO-220FP
- Diode Configuration: Dual Common Cathode
- Forward Voltage Max: 840mV
- Forward Surge Current: 150A
- Average Forward Current: 20A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 45V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 0.827 € |
| Current stock | 200+ |
| Lead time | 7 days |
Datasheet
## MBR2045CTG, MBRF2045CTG ## Switch-mode Power Rectifier ## **Features and Benefits** **www.onsemi.com** - Low Forward Voltage - Low Power Loss / High Efficiency - High Surge Capacity - 175°C Operating Junction Temperature - 20 A Total (10 A Per Diode Leg) ## **SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 45 VOLTS** - These Devices are Pb−Free and are RoHS Compliant ## **Applications** - Power Supply − Output Rectification - Power Management - Instrumentation ## **Mechanical Characteristics** - Case: Epoxy, Molded - Epoxy Meets UL 94, V−0 @ 0.125 in - Weight: 1.9 Grams (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - ESD Rating: Human Body Model = 3B Machine Model = C **==> picture [125 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>2, 4<br>3<br>4<br>1 1<br>2 2<br>3 3<br>**----- End of picture text -----**<br> **==> picture [140 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> TO−220AB TO−220<br>CASE 221A FULLPAK<br>STYLE 6 CASE 221AH<br>**----- End of picture text -----**<br> ## **DEVICE MARKING INFORMATION** See general marking information in the device marking section on page 2 of this data sheet. ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 3 of this data sheet. Publication Order Number: **MBR2045CT/D** **1** © Semiconductor Components Industries, LLC, 2016 **July, 2016 − Rev. 12** **MBR2045CTG, MBRF2045CTG** **==> picture [221 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> AYWW AYWW<br>MBR2045CTG B2045G<br>AKA AKA<br>TO−220AB TO−220 FULLPAK<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>AKA = Diode Polarity<br>**----- End of picture text -----**<br> ## **Figure 1. Marking Diagrams** ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|45|V| |Average Rectified Forward Current<br>Per Device<br>Per Diode (TC= 165°C)|IF(AV)|20<br>10|A| |Peak Repetitive Forward Current<br>per Diode Leg (Square Wave, 20 kHz, TC= 163°C)|IFRM|20|A| |Non−Repetitive Peak Surge Current<br>(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)|IFSM|150|A| |Peak Repetitive Reverse Surge Current (2.0�s, 1.0 kHz)<br>See Figure 13|IRRM|1.0|A| |Storage Temperature Range|Tstg|−65 to +175|°C| |Operating Junction Temperature (Note 1)|TJ|−65 to +175|°C| |Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R � JA. ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Maximum Thermal Resistance<br>(MBR2045CTG)<br>− Junction−to−Case<br>− Junction−to−Ambient<br>(MBRF2045CTG)<br>− Junction−to−Case<br>− Junction−to−Ambient|R�JC<br>R�JA<br>R�JC<br>R�JA|2.0<br>60<br>4.75<br>75|°C/W| **www.onsemi.com** **2** **MBR2045CTG, MBRF2045CTG** ## **ELECTRICAL CHARACTERISTICS** |**ELECTRICAL CHARACTERISTICS**|||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |Instantaneous Forward Voltage (Note 2)<br>(iF= 10 A, TJ= 125°C)<br>(iF= 20 A, TJ= 125°C)<br>(iF= 20 A, TJ= 25°C)|vF|−<br>−<br>−|0.50<br>0.67<br>0.71|0.57<br>0.72<br>0.84|V| |Instantaneous Reverse Current (Note 2)<br>(Rated dc Voltage, TJ= 125°C)<br>(Rated dc Voltage, TJ= 25°C)|iR|−<br>−|10.4<br>0.02|15<br>0.1|mA| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 � s, Duty Cycle ≤ 2.0%. ## **ORDERING INFORMATION** **==> picture [494 x 494] intentionally omitted <==** **----- Start of picture text -----**<br> Device Order Number Package Type Shipping [†]<br>MBR2045CTG TO−220 50 Units / Rail<br>(Pb−Free)<br>MBRF2045CTG TO−220FP 50 Units / Rail<br>(Pb−Free)<br>100 100<br>70 70 TJ = 150°C 125°C<br>50 50 25°C<br>30 30<br>20 TJ = 150°C 20<br>10 10<br>7.0 7.0<br>5.0 5.0<br>125°C<br>25°C<br>3.0 3.0<br>2.0 2.0<br>1.0 1.0<br>0.7 0.7<br>0.5 0.5<br>0.3 0.3<br>0.2 0.2<br>0.1 0.1<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>vF, INSTANTANEOUS VOLTAGE (VOLTS) vF, INSTANTANEOUS VOLTAGE (VOLTS)<br>iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS)<br>**----- End of picture text -----**<br> **Figure 1. Typical Forward Voltage** **Figure 2. Maximum Forward Voltage** **www.onsemi.com** **3** **MBR2045CTG, MBRF2045CTG** **==> picture [240 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>TJ = 150°C<br>10<br>125°C<br>1.0<br>100°C<br>0.1<br>0.01<br>25°C<br>0.001<br>0.0001<br>0 5.0 10 15 20 25 30 35 40 45 50<br>VR, REVERSE VOLTAGE (VOLTS)<br>, REVERSE CURRENT (mA)<br>IR<br>**----- End of picture text -----**<br> **Figure 3. Typical Reverse Current** **==> picture [240 x 398] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>100<br>70<br>50<br>30<br>20<br>1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100<br>NUMBER OF CYCLES AT 60 Hz<br>Figure 5. Maximum Surge Capability<br>20<br>18 R�JA = 16°C/W<br>dc (With TO-220 Heat Sink)<br>16 R�JA = 60°C/W<br>14 (No Heat Sink)<br>12 SQUARE WAVE<br>10<br>8.0<br>dc<br>6.0<br>4.0<br>2.0<br>0<br>0 25 50 75 100 125 150 175<br>TA, AMBIENT TEMPERATURE (°C)<br>IFSM, PEAK HALF-WAVE CURRENT (AMPS)<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>**----- End of picture text -----**<br> **Figure 7. Current Derating, Ambient, Per Leg** **==> picture [240 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>TJ = 150°C<br>10 125°C<br>100°C<br>1.0<br>75°C<br>0.1<br>25°C<br>0.01<br>0.001<br>0 5.0 10 15 20 25 30 35 40 45 50<br>VR, REVERSE VOLTAGE (VOLTS)<br>, REVERSE CURRENT (mA)<br>IR<br>**----- End of picture text -----**<br> **Figure 4. Maximum Reverse Current** **==> picture [237 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 18<br>dc<br>16<br>14<br>12<br>10 SQUARE<br>WAVE<br>8.0<br>6.0<br>4.0<br>2.0<br>0<br>140 145 150 155 160 165 170 175 180<br>TC, CASE TEMPERATURE (°C)<br>, AVERAGE FORWARD CURRENT (AMPS)<br>IF(AV)<br>**----- End of picture text -----**<br> **Figure 6. Current Derating, Case, Per Leg** **==> picture [238 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> 28<br>26 T J = 175°C<br>24<br>22<br>20<br>18<br>16 SQUARE dc<br>14 WAVE<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30<br>IF(AV), AVERAGE FORWARD CURRENT (AMPS)<br>, AVERAGE FORWARD POWER DISSIPATION (WATTS)<br>PF(AV)<br>**----- End of picture text -----**<br> **Figure 8. Forward Power Dissipation** **www.onsemi.com** **4** **MBR2045CTG, MBRF2045CTG** **==> picture [491 x 363] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>0.7<br>0.5<br>0.3<br>0.2 t Ppk Ppk DUTY CYCLE, D = tp/t1<br>0.1 p TIME PEAK POWER, Ppk, is peak of an<br>0.07 t1 equivalent square power pulse.<br>0.05 �T JL = P pk • R� JL [D + (1 - D) • r(t 1 + t p ) + r(t p ) - r(t 1 )] where:<br>�TJL = the increase in junction temperature above the lead temperature.<br>0.03 r(t) = normalized value of transient thermal resistance at time, t, i.e.:<br>0.02 r(t 1 + t p ) = normalized value of transient thermal resistance at time,<br>t1 + tp, etc.<br>0.01<br>0.01 0.1 1.0 10 100 1000<br>t, TIME (ms)<br>Figure 9. Thermal Response for MBR2045CT<br>100<br>D = 0.5<br>0.2<br>10 0.1<br>0.05<br>0.02<br>1.0<br>0.01<br>0.1<br>P(pk)(pk)<br>t11<br>0.01 SINGLE PULSE<br>t22<br>DUTY CYCLE, D = t1/t21/t2/t22<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>(NORMALIZED)<br>r(t), TRANSIENT THERMAL RESISTANCE<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> **==> picture [472 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>D = 0.5<br>0.2<br>10 0.1<br>0.05<br>0.02<br>1.0<br>0.01<br>0.1<br>P(pk)(pk)<br>t11<br>0.01 SINGLE PULSE<br>t22<br>DUTY CYCLE, D = t1/t21/t2/t22<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t1, TIME (sec)<br>**----- End of picture text -----**<br> **Figure 10. Thermal Response Junction−to−Ambient for MBRF2045CT** **==> picture [489 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>D = 0.5<br>1.0 0.2<br>0.1<br>0.05<br>0.02<br>0.1<br>0.01<br>P (pk)<br>0.01 SINGLE PULSE t1<br>t2<br>DUTY CYCLE, D = t1/t2<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t1, TIME (sec)<br>R(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br> **Figure 11. Thermal Response Junction−to−Case for MBRF2045CT** **www.onsemi.com** **5** **MBR2045CTG, MBRF2045CTG** ## **HIGH FREQUENCY OPERATION** **==> picture [239 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>900 TJ = 25°C<br>f = 1 MHz<br>800<br>700<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>0 10 20 30 40 50<br>VR, REVERSE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 12.) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2.0 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss; it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. **Figure 12. Typical Capacitance** **==> picture [256 x 260] intentionally omitted <==** **----- Start of picture text -----**<br> +150 V, 10 mAdc<br>2.0 k�<br>VCC 12 Vdc<br>D.U.T. +<br>12 V 100 4.0 �F<br>2N2222<br>2.0 �s<br>1.0 kHz<br>CURRENT<br>2N6277<br>AMPLITUDE<br>100<br>ADJUST<br>CARBON<br>0-10 AMPS<br>1.0 CARBON<br>1N5817<br>**----- End of picture text -----**<br> **Figure 13. Test Circuit for dv/dt and Reverse Surge Current** **www.onsemi.com** **6** **MBR2045CTG, MBRF2045CTG** ## **PACKAGE DIMENSIONS** ## **TO−220** CASE 221A−09 ISSUE AH NOTES: **==> picture [234 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> SEATING<br>−T− PLANE<br>B F C<br>T S<br>4<br>Q A<br>1 2 3 U<br>H<br>K<br>Z<br>L R<br>V J<br>G<br>D<br>N<br>**----- End of picture text -----**<br> 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. |**DIM**|**INCHES**|**INCHES**|**MILLIMETERS**|**MILLIMETERS**| |---|---|---|---|---| ||**MIN**<br>|**MAX**<br>|**MIN**<br>|**MAX**<br>| |**A**|0.570|0.620|14.48|15.75| |**B**|0380|0415|966|1053| |**C**|.<br>0.160|.<br>0.190|.<br>4.07|.<br>4.83| |**D**|0.025|0.038|0.64|0.96| |**F**|0.142|0.161|3.61|4.09| |**G**|0.095|0.105|2.42|2.66| |**H**|0.110|0.161|2.80|4.10| |**J**|0.014|0.024|0.36|0.61| |**K**|0.500|0.562|12.70|14.27| |**L**|0.045|0.060|1.15|1.52| |**N**|0.190|0.210|4.83|5.33| |**Q**|0100|0120|254|304| |**R**|.<br>0.080|.<br>0.110|.<br>2.04|.<br>2.79| |**S**|0.045|0.055|1.15|1.39| |**T**|0.235|0.255|5.97|6.47| |**U**|0.000|0.050|0.00|1.27| |**V**|0.045|---|1.15|---| |**Z**|---|0.080|---|2.04| |STYL<br>PI|E 6:<br>N 1.<br>ANODE<br>2.<br>CATHODE<br>3.<br>ANODE<br>4.<br>CATHODE|||| **www.onsemi.com** **7** **MBR2045CTG, MBRF2045CTG** ## **PACKAGE DIMENSIONS** **TO−220 FULLPACK, 3−LEAD** CASE 221AH ISSUE F **==> picture [444 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> A B SEATINGPLANE NOTES:1. DIMENSIONING AND TOLERANCING PER ASME<br>E Y14.5M, 1994.<br>E/2 P A 2. CONTROLLING DIMENSION: MILLIMETERS.<br>0.14 M B A M H1 A1 3.4. CONTOUR UNCONTROLLED IN THIS AREA.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE<br>PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO<br>EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE<br>Q MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.<br>D C 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.<br>LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.<br>1 2 3 NOTE 3 6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY<br>MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1<br>AND H1 FOR MANUFACTURING PURPOSES.<br>L L1 MILLIMETERS<br>DIM MIN MAX<br>A 4.30 4.70<br>A1 2.50 2.90<br>+ Le 3X b c —>| A2 2.50 2.90<br>3X b2 0.25 M B A M C A2 b2b 0.541.10 0.841.40<br>c 0.49 0.79<br>e SIDE VIEW D 14.70 15.30<br>FRONT VIEW E 9.70 10.30<br>e 2.54 BSC<br>H1 6.60 7.10<br>L 12.50 14.73<br>L1 --- 2.80<br>P 3.00 3.40<br>SECTION D−D Q 2.80 3.20<br>**----- End of picture text -----**<br> **==> picture [226 x 126] intentionally omitted <==** **----- Start of picture text -----**<br> A<br>NOTE 6<br>NOTE 6<br>H1<br>D D<br>A SECTION A−A<br>ALTERNATE CONSTRUCTION<br>**----- End of picture text -----**<br> FULLPAK is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative **www.onsemi.com MBR2045CT/D** ## **LITERATURE FULFILLMENT** : **8**
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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