M1MA141KT1G

## M1MA141KT1G, M1MA142KT1G 

## Single Silicon Switching Diode 

This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC--70 **http://onsemi.com** package which is designed for low power surface mount applications. CATHODE **Features** 3  Fast trr, < 3.0 ns  Low CD, < 2.0 pF  These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant **MAXIMUM RATINGS** (TA = 25C) ANODE1 NO CONNECTION2 **Rating Symbol Value Unit** Reverse Voltage VR Vdc 3 M1MA141KT1 40 **SC--70 (SOT--323)** M1MA142KT1 80 **CASE 419** Peak Reverse Voltage VRM Vdc 1 ti 2 **STYLE 2** M1MA141KT1 40 M1MA142KT1 80 Forward Current IF 100 mAdc **MARKING DIAGRAM** Peak Forward Current IFM 225 mAdc Peak Forward Surge Current IFSM 500 mAdc (Note 1) Mx M G ~~=~~ G **THERMAL CHARACTERISTICS Rating Symbol Max Unit** Power Dissipation PD 150 mW Mx = Device Code x = H for 141 Junction Temperature TJ 150 C I for 142 ~~Oo~~ Storage Temperature Tstg -- 55 ~ +150 C M G == Date Code*Pb--Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum (Note: Microdot may be in either location) Ratings are stress ratings only. Functional operation above the Recommended *Date Code orientation may vary depending upon Operating Conditions is not implied. Extended exposure to stresses above the manufacturing location. Recommended Operating Conditions may affect device reliability. 1. t = 1 sec **ORDERING INFORMATION Device Package Shipping**[†] M1MA141KT1G SC--70 3000/Tape & Reel (Pb--Free) M1MA142KT1G SC--70 3000/Tape & Reel (Pb--Free) ~~=a~~ 

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

 Semiconductor Components Industries, LLC, 2010 **October, 2010 -- Rev. 7** 

**M1MA141KT1/D** 

**M1MA141KT1G, M1MA142KT1G** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25C) 

|**ELECTRICAL CHARACTERISTICS** (TA= 25C)||||||
|---|---|---|---|---|---|
|**Characteristic**|**Condition**|**Symbol**|**Min**|**Max**|**Unit**|
|Reverse Voltage Leakage Current<br>M1MA141KT1<br>M1MA142KT1|VR= 35 V<br>VR= 75 V|IR|--|0.1|mAdc|
|Forward Voltage|IF= 100 mA|VF|--|1.2|Vdc|
|Reverse Breakdown Voltage<br>M1MA141KT1<br>M1MA142KT1|IR= 100mA|VR|40<br>80|--|Vdc|
|Diode Capacitance|VR= 0, f = 1.0 MHz|CD|--|2.0|pF|
|Reverse Recovery Time (Figure 1)|IF= 10 mA, VR= 6.0 V,<br>RL= 100Ω, Irr= 0.1 IR|trr<br>(Note 2)|--|3.0|ns|



2. trr Test Circuit 

**http://onsemi.com** 

**2** 

**M1MA141KT1G, M1MA142KT1G** 

**INPUT PULSE OUTPUT PULSE** 

## **RECOVERY TIME EQUIVALENT TEST CIRCUIT** 

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RL<br>A<br>**----- End of picture text -----**<br>


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tr tp trr<br>IF t<br>t<br>10%<br>Irr = 0.1 IR<br>90% IF = 10 mA<br>VR = 6 V<br>VR tp = 2  m s RL = 100  Ω<br>tr = 0.35 ns<br>**----- End of picture text -----**<br>


**Figure 1. Recovery Time Equivalent Test Circuit** 

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100 10<br>TA = 150C<br>TA = 85C TA = 125C<br>1.0<br>10<br>TA = -- 40C TA = 85C<br>0.1<br>1.0 TA = 25C TA = 55C<br>0.01<br>TA = 25C<br>0.1 0.001<br>0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50<br>VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)<br>Figure 2. Forward Voltage Figure 3. Reverse Current<br>0.68<br>0.64<br>0.6<br>0.56<br>0.52<br>0 2 4 6 8<br>VR, REVERSE VOLTAGE (VOLTS)<br>A)<br><br>IR, REVERSE CURRENT (<br>IF, FORWARD CURRENT (mA)<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 4. Diode Capacitance** 

**http://onsemi.com** 

**3** 

**M1MA141KT1G, M1MA142KT1G** 

## **PACKAGE DIMENSIONS** 

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SC--70 (SOT--323)<br>CASE 419--04<br>ISSUE N<br>D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>e1 2. CONTROLLING DIMENSION: INCH.<br>MILLIMETERS INCHES<br>3 DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.032 0.035 0.040<br>HE E A1 0.00 0.05 0.10 0.000 0.002 0.004<br>1 2 A2 0.70 REF 0.028 REF<br>b 0.30 0.35 0.40 0.012 0.014 0.016<br>c 0.10 0.18 0.25 0.004 0.007 0.010<br>if oraa n? .=====—— D 1.80 2.10 2.20 — 0.071 0.083 0.087<br>b E 1.15 1.24 1.35 0.045 0.049 0.053<br>e 1.20 1.30 1.40 0.047 0.051 0.055<br>e e1 0.65 BSC 0.026 BSC<br>L 0.20 0.38 0.56 0.008 0.015 0.022<br>H E 2.00 2.10 2.40 0.079 0.083 0.095<br>STYLE 2:<br>A A2 c PIN 1. ANODE<br>2. N.C.<br>3. CATHODE<br>oH, 0.05 (0.002) A1 J L<br>**----- End of picture text -----**<br>


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SOLDERING FOOTPRINT*<br>0.65<br>0.65 0.025<br>0.025<br>1.9<br>uu.<br>0.075<br>0.9<br>0.035<br>—|-<br>0.7<br>0.028 a<br>SCALE 10:1<br> inches [mm] <br>**----- End of picture text -----**<br>


*For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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## **PUBLICATION ORDERING INFORMATION** 

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