LND150N8-G

## **LND150/LND250** 

## **N-Channel Depletion-Mode DMOS FETs** 

## **Features** 

- Free from Secondary Breakdown 

- Low-Power Drive Requirement 

- Ease of Paralleling 

- Excellent Thermal Stability 

- Integral Source-Drain Diode 

- High Input Impedance and Low CISS 

## **General Description** 

The LND150 and LND250 are high-voltage N-channel Depletion-mode (normally-on) transistors utilizing lateral DMOS technology. The gate is ESD protected. 

The LND150/LND250 are ideal for high-voltage applications, such as normally-on switches, precision constant-current sources, voltage-ramp generation and amplification. 

- ESD Gate Protection 

## **Applications** 

- Solid-State Relays 

- Normally-On Switches 

- Converters 

- Power Supply Circuits 

- Constant-Current Sources 

- Input Protection Circuits 

## **Package Types** 

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**----- Start of picture text -----**<br>
3-lead TO-92 3-lead SOT-23  3-lead SOT-89<br>(Top view) (Top view) (Top view)<br>SOURCE SOURCE<br>DRAIN DRAIN DRAIN<br>SOURCE<br>SOURCE<br>GATE GATE<br>GATE<br>**----- End of picture text -----**<br>


See Table 3-1, Table 3-2 and Table 3-3 for pin information. 

DS20005454A-page  1 

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**LND150/LND250** 

## **1.0 ELECTRICAL CHARACTERISTICS** 

## **ABSOLUTE MAXIMUM RATINGS[†]** 

Drain-to-Source Voltage ...................................................................................................................................... BVDSX Drain-to-Gate Voltage .......................................................................................................................................... BVDGX Gate-to-Source Voltage .........................................................................................................................................  ±20V Operating Ambient Temperature, TA ...................................................................................................... –55°C to 150°C Storage Temperature, TS ....................................................................................................................... –55°C to 150°C 

**† Notice:** Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. 

## **DC ELECTRICAL CHARACTERISTICS** 

**Electrical Specifications:** TA = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle 

|**DC ELECTRICAL CHARACTERISTICS**|**DC ELECTRICAL CHARACTERISTICS**|**DC ELECTRICAL CHARACTERISTICS**|**DC ELECTRICAL CHARACTERISTICS**|**DC ELECTRICAL CHARACTERISTICS**|**DC ELECTRICAL CHARACTERISTICS**|**DC ELECTRICAL CHARACTERISTICS**|
|---|---|---|---|---|---|---|
|**Electrical Specifications:**TA= 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless<br>otherwise stated. Pulse test: 300µspulse, 2% dutycycle|||||||
|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|Drain-to-Source Breakdown Voltage|BVDSX|500|—|—|V|VGS= –10V, ID= 1 mA|
|Gate-to-Source Off Voltage|VGS(OFF)|–1|—|–3|V|VGS = 25V, ID= 100 nA|
|Change in VGS(OFF)with Temperature|∆VGS(OFF)|—|—|5|mV/°C|VGS= 25V, ID= 100 nA<br>(**Note 1**)|
|Gate BodyLeakage Current|IGSS|—|—|100|nA|VGS= ±20V, VDS = 0V|
|Drain-to-Source Leakage Current|ID(OFF)|—|—|100|nA|VGS= –10V, VDS= 450V|
|||—|—|100|µA|VDS= 0.8V Maximum rating,<br>VGS= –10V, TA= 125°C<br>(**Note 1**)|
|Saturated Drain-to-Source Current|IDSS|1|—|3|mA|VGS= 0V, VDS= 25V|
|Static Drain-to-Source On-State Resistance|RDS(ON)|—|850|1000|Ω|VGS= 0V, ID= 0.5 mA|
|Change in RDS(ON)with Temperature|∆RDS(ON)|—|—|1.2|%/°C|VGS= 0V, ID= 0.5 mA<br>(**Note 1**)|



**Note 1:** Specification is obtained by characterization and is not 100% tested. 

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**LND150/LND250** 

## **AC ELECTRICAL CHARACTERISTICS** 

**Electrical Specifications:** TA = 25°C unless otherwise specified. Specification is obtained by characterization and is not 100% tested. 

|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|**AC ELECTRICAL CHARACTERISTICS**|
|---|---|---|---|---|---|---|
|**Electrical Specifications:**TA= 25°C unless otherwise specified. Specification is obtained by characterization and is<br>not 100% tested.|||||||
|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|Forward Transconductance|GFS|1|2|—|mmho|VDS= 0V, ID= 1 mA|
|Input Capacitance|CISS|—|7.5|10|pF|VGS= –10V,<br>VDS= 25V,<br>f = 1 MHz|
|Common Source Output Capacitance|COSS|—|2|3.5|pF||
|Reverse Transfer Capacitance|CRSS|—|0.5|1|pF||
|Turn-On DelayTime|td(ON)|—|0.09|—|ns|VDD= 25V,<br>ID= 1 mA,<br>RGEN= 25Ω|
|Rise Time|tr|—|0.45|—|ns||
|Turn-Off DelayTime|td(OFF)|—|0.1|—|ns||
|Fall Time|tf|—|1.3|—|ns||
|**DIODE PARAMETER**|||||||
|Diode Forward Voltage Drop|VSD|—|—|0.9|V|VGS= –10V, ISD= 1 mA(**Note 1**)|
|Reverse RecoveryTime|trr|—|200|—|ns|VGS= –10V, ISD= 1 mA|



**Note 1:** Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty cycle. 

## **TEMPERATURE SPECIFICATIONS** 

|**Parameter**|**Sym.**|**Min.**|**Typ.**|**Max.**|**Unit**|**Conditions**|
|---|---|---|---|---|---|---|
|**TEMPERATURE RANGE**|||||||
|OperatingAmbient Temperature|TA|–55|—|+150|°C||
|Storage Temperature|TS|–55|—|+150|°C||
|**PACKAGE THERMAL RESISTANCE**|||||||
|3-lead TO-92|JA|—|132|—|°C/W||
|3-lead SOT-23|JA|—|203|—|°C/W||
|3-lead SOT-89|JA|—|133|—|°C/W||



## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||||
|---|---|---|---|---|---|
|**Package**|**ID (Note 1)**<br>**(Continuous)**<br>**(mA)**|**ID**<br>**(Pulsed)**<br>**(A)**|**Power Dissipation**<br>**at TA = 25°C**<br>**(W)**|**IDR**<br>**(mA)**|**IDRM**<br>**(Note 1)**<br>**(A)**|
|3-lead TO-92|30|30|0.74|30|30|
|3-lead SOT-23|13|30|0.36|13|30|
|3-lead SOT-89|30|30|1.6(**Note 2**)|30|30|



**Note 1:** ID (continuous) is limited by maximum rated TJ. 

**2:** TA = 25°C. Mounted on an FR4 Board, 25 mm x 25 mm x 1.57 mm. 

DS20005454A-page  3 

 2018 Microchip Technology Inc. 

## **LND150/LND250** 

## **2.0 TYPICAL PERFORMANCE CURVES** 

**Note:** The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g. outside specified power supply range) and therefore outside the warranted range. 

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6<br>VGS = 1.0V<br>5<br>4<br>0.5V<br>3<br>2<br>0V<br>1<br>-0.5V<br>0 0                  1                  2                  3                                       54 -1.0V<br>VDS (V)<br>(milliamps)<br>ID<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
6<br>VGS = 1.0V<br>5<br>4<br>0.5V<br>3<br>2<br>0V<br>1<br>-0.5V<br>0 -1.0V<br>0                                               250                                            500<br>VDS (V)<br>(milliamps)<br>ID<br>**----- End of picture text -----**<br>


_**FIGURE 2-1:** Output  Characteristics._ 

**==> picture [209 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
FIGURE 2-4: Saturation Characteristics.<br>**----- End of picture text -----**<br>


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10 2<br>VDS = 400V<br>SOT-89<br>8<br>TA = -55°C<br>6<br>25°C<br>1<br>4 125°C TO-92<br>2 SOT-23<br>0 0 2                  4                   6 8 10 00                                                                                                 15050 100<br>ID (milliamps) TA (°C)<br>FIGURE 2-2: Transconductance vs. Drain  FIGURE 2-5: Power Dissipation vs.<br>Current. Ambient Temperature.<br>100 1.0<br>SOT-89 (DC)<br>Pulsed<br>0.8 SOT-89<br>TO-92 (DC) TA = 25°C<br>10 PD = 1.2W<br>SOT-23 (DC)<br>0.6<br>0.4<br>1<br>TO-92<br>300 T A  = 25°C μs pulse 0.2 PTC D = 25°C= 1.0W<br>2% duty cycle<br>0.1 0<br>1                                                                                               100010 100 0.001                                                                                              100.01 0.1 1.0<br>VDS (V) tP (seconds)<br>FIGURE 2-3: Maximum Rated Safe  FIGURE 2-6: Thermal Response<br>Characteristics.<br>(Watts)<br>D<br>(millisiemens) P<br>FS<br>G<br>(milliamps)<br>ID<br>Thermal Resistance (normalized)<br>**----- End of picture text -----**<br>


_**FIGURE 2-3:** Maximum Rated Safe Operating Area._ 

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**LND150/LND250** 

**==> picture [216 x 582] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.1 VGS = -5.0V<br>1.0<br>0.9<br>-50                    0                     50                   100                 150<br>Tj ( [O] C)<br>FIGURE 2-7: BVDSS Variation with<br>Temperature.<br>10<br>VDS = 400V<br>5<br>0<br>-1                 0                 1                 2                 3<br>VGS (V)<br>FIGURE 2-8: Transfer Characteristics.<br>10<br>VGS = -10V<br>CISS<br>5<br>COSS<br>CRSS<br>0<br>0                     10                    20                    30                   40<br>VDS (V)<br>FIGURE 2-9: Capacitance vs. Drain-to-<br>Source Voltage.<br>TA = -55°C<br>25°C<br>125°C<br> (normalized)<br>DSS<br>BV<br>(milliamps)<br>ID<br>C (picofarads)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1.4<br>1.2 25°C ILND1↓D<br>125°C<br>1.0<br>0.8 RSOURCE<br>0.6<br>0.4<br>0.2<br>0.0<br>10 100                    1K                  10K 100K<br>RSOURCE (Ω)<br>FIGURE 2-10:  Drain Current vs. RSOURCE.SOURCE..<br>1.8<br>2.0<br>1.6<br>RDS(ON) @ ID = 1.0mA<br>1.6<br>1.4<br>1.2<br>1.2<br>0.8<br>VGS(OFF) @ 100nA<br>1.0<br>0.4<br>0.8-50                     0                    50                   100                 150<br>Tj ( [O] C)<br>(milliamps)<br>ID<br>(normalized) (normalized)<br>DS(ON)<br>GS(OFF)  R<br>V<br>**----- End of picture text -----**<br>


_**FIGURE 2-10:** Drain Current vs. RSOURCE.SOURCE.._ 

_**FIGURE 2-11:** VGS(OFF) and RDS Variation with Temperature._ 

**==> picture [216 x 192] intentionally omitted <==**

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10<br>8.7pF<br>VDS = 20V 40V 60V<br>5<br>0<br>-50                            0.1                           0.2                           0.3<br>QC (nanocoulombs)<br>FIGURE 2-12: Gate Drive Dynamic<br>Characteristics.<br>(V)<br>GS<br>V<br>**----- End of picture text -----**<br>


DS20005454A-page  5 

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## **LND150/LND250** 

## **3.0 PIN DESCRIPTION** 

The details on the pins of LND150/LND250 are listed on Table 3-1, Table 3-2 and Table 3-3. Refer to **Package Types** for the location of pins. 

**TABLE 3-1: TO-92 PIN FUNCTION TABLE** 

|**Pin Number**|**Pin Name**|**Description**|
|---|---|---|
|1|SOURCE|SOURCE|
|2|GATE|GATE|
|3|DRAIN|DRAIN|



## **TABLE 3-2: SOT-23 PIN FUNCTION TABLE** 

|**Pin Number**|**Pin Name**|**Description**|
|---|---|---|
|1|GATE|GATE|
|2|DRAIN|DRAIN|
|3|SOURCE|SOURCE|



## **TABLE 3-3: SOT-89 PIN FUNCTION TABLE** 

|**Pin Number**|**Pin Name**|**Description**|
|---|---|---|
|1|GATE|GATE|
|2, 4|SOURCE|SOURCE|
|3|DRAIN|DRAIN|



DS20005454A-page  6 

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**LND150/LND250** 

## **4.0 FUNCTIONAL DESCRIPTION** 

Figure 4-1 illustrates the switching waveforms and test circuit for LND150/LND250. 

**==> picture [454 x 123] intentionally omitted <==**

**----- Start of picture text -----**<br>
0V 90% VDD<br>INPUT 10% GeneratorPulse RL<br>-10V OUTPUT<br>t t<br>(ON) (OFF) RGEN<br>td(ON) tr td(OFF) tf<br>VDD INPUT D.U.T.<br>10% 10%<br>OUTPUT<br>0V 90% 90%<br>**----- End of picture text -----**<br>


_**FIGURE 4-1:** Switching Waveforms and Test Circuit._ 

## **TABLE 4-1: PRODUCT SUMMARY** 

|**BVDSX/BVDGX**<br>**(V)**|**RDS(ON)**<br>**(Maximum)**<br>**(Ω)**|**IDSS(ON)**<br>**(Minimum)**<br>**(mA)**|
|---|---|---|
|500|1000|1|



DS20005454A-page  7 

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**LND150/LND250** 

## **5.0 PACKAGING INFORMATION** 

## **5.1 Package Marking Information** 

3-lead TO-92 Example 

**==> picture [354 x 528] intentionally omitted <==**

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XXXXXX LND150<br>XX [e] 3 N3 [e] 3<br>YWWNNN 802343<br>3-lead SOT-23  Example<br>XXXNNN NDE343<br>3-lead SOT-89 Example<br>XXXXYWW LN1E802<br>NNN 343<br>Legend: XX...X Product Code or Customer-specific information<br>Y Year code (last digit of calendar year)<br>YY Year code (last 2 digits of calendar year)<br>WW Week code (week of January 1 is week ‘01’)<br>NNN Alphanumeric traceability code<br>e3 Pb-free JEDEC [®]  designator for Matte Tin (Sn)<br>* This package is Pb-free. The Pb-free JEDEC designator (     ) e3<br>can be found on the outer packaging for this package.<br>Note : In the event the full Microchip part number cannot be marked on one line, it will<br>be carried over to the next line, thus limiting the number of available<br>characters for product code or customer-specific information. Package may or<br>not include the corporate logo.<br>**----- End of picture text -----**<br>


DS20005454A-page  8 

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**LND150/LND250** 

Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging. 

DS20005454A-page  9 

 2018 Microchip Technology Inc. 

## **LND150/LND250** 

## **3-Lead TO-236AB (SOT-23) Package Outline (K1/T)** _**2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch**_ 

**==> picture [360 x 242] intentionally omitted <==**

**----- Start of picture text -----**<br>
D<br>3<br>E1 E<br>0.25 Gauge<br>Plane<br>1 2 L Seating<br>Plane<br>L1<br>e b<br>e1<br>Top View View B<br>A View B<br>A2<br>A<br>Seating<br>Plane<br>A1<br>Side View A View A - A<br>**----- End of picture text -----**<br>


**Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.** 

|**Symbol**|**Symbol**|**A**|**A1**|**A2**|**b**|**D**|**E**|**E1**|**e**|**e1**|**L**|**L1**|**�**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||MIN|0.89|0.01|0.88|0.30|2.80|2.10|1.20|||0.20_†_||0O|
|Dimension<br>(mm)|NOM|-|-|0.95|-|2.90|-|1.30|0.9<br>BS|5<br>C<br>1.90<br>BSC|0.50|0.54<br>REF|-|
||MAX|1.12|0.10|1.02|0.50|3.04|2.64|1.40|||0.60||8O|
|_JEDEC Registration TO-236, Variation AB, Issue H, Jan._<br>_† This dimension differs from the JEDEC drawing._<br>**_Drawings not to scale._**|||||_1999._|||||||||



DS20005454A-page  10 

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**LND150/LND250** 

## **3-Lead TO-243AA (SOT-89) Package Outline (N8)** 

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**----- Start of picture text -----**<br>
D<br>D1 C<br>E H E1<br>1 2 3<br>L<br>b b1 A<br>e<br>e1<br>Top View Side View<br>**----- End of picture text -----**<br>


**Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.** 

**==> picture [405 x 55] intentionally omitted <==**

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Symbol A b b1 C D D1 E E1 e e1 H L<br>MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00 [†] 3.94 0.73 [†]<br>Dimensions NOM - - - - - - - - 1.50 3.00 - -<br>(mm) BSC BSC<br>MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20<br>**----- End of picture text -----**<br>


_JEDEC Registration TO-243, Variation AA, Issue C, July 1986._ _**†** This dimension differs from the JEDEC drawing_ _**Drawings not to scale** ._ 

DS20005454A-page  11 

 2018 Microchip Technology Inc. 

**LND150/LND250** 

## **NOTES:** 

DS20005454A-page  12 

 2018 Microchip Technology Inc. 

**LND150/LND250** 

## **APPENDIX A: REVISION HISTORY** 

## **Revision A (August 2018)** 

- Converted and merged Supertex Doc#s DSFP-LND150 and DSFP-LND250 to Microchip DS20005454 

- Changed the package marking format 

- Removed the TO-92 N3 P005 media type 

- Added some sections to comply with the standard Microchip Technology Inc. documentation format 

- Made minor text changes throughout the document 

DS20005454A-page  13 

 2018 Microchip Technology Inc. 

**LND150/LND250** 

## **PRODUCT IDENTIFICATION SYSTEM** 

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. 

|Devices:<br>LND150 = N-Channel Depletion-Mode DMOS FET<br>LND250 = N-Channel Depletion-Mode DMOS FET<br>Packages:<br>N3<br>= 3-lead TO-92<br>K1<br>= 3-lead SOT-23<br>N8<br>= 3-lead SOT-89<br>Environmental:<br>G<br>= Lead (Pb)-free/ROHS-compliant package<br>Media Types:<br>(blank)<br>= 1000/Bag for an N3 package<br>= 3000/Reel for a K1 package<br>= 2000/Reel for an N8 package<br>P002<br>= 2000/Reel for an N3 package<br>P003<br>= 2000/Reel for an N3 package<br>P013<br>= 2000/AMMO Pack for an N3 package<br>P014<br>= 2000/AMMO Pack for an N3 package<br>**Note: LND250 is only offered in 3-lead SOT-23 package.**<br>**PART NO.**<br>**X**<br>**Device**<br>**X**<br>**Environmental**<br>**XX**<br>**Package**<br>**Options**<br>**Media**<br>**-**<br>**-**<br>**Type**|**Examples:**<br>a)<br>LND150N3-G:<br>N-Channel Depletion-Mode<br>DMOS FET, 3-lead TO-92,<br>1000/Bag<br>b) LND150K1-G:<br>N-Channel Depletion-Mode<br>DMOS FET, 3-lead SOT-23,<br>3000/Reel<br>c)<br>LND150N8-G:<br>N-Channel Depletion-Mode<br>DMOS FET, 3-lead TO-92,<br>2000/Reel<br>d) LND150N3-G-P002:<br>N-Channel Depletion-Mode<br>DMOS FET, 3-lead TO-92,<br>2000/Reel|
|---|---|



DS20005454A-page  14 

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## **Note the following details of the code protection feature on Microchip devices:** 

- Microchip products meet the specification contained in their particular Microchip Data Sheet. 

- Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. 

- There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. 

- Microchip is willing to work with the customer who is concerned about the integrity of their code. 

- Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” 

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. 

Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE **.** Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. 

_Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC[®] MCUs and dsPIC[®] DSCs, KEELOQ[®] code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified._ 

## **QUALITY MANAGEMENT  SYSTEM** 

## **CERTIFIED BY DNV** 

## **Trademarks** 

The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BitCloud, chipKIT, chipKIT logo, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq, Kleer, LANCheck, LINK MD, maXStylus, maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip Designer, QTouch, SAM-BA, SpyNIC, SST, SST Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. 

ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, CodeGuard, CryptoAuthentication, CryptoAutomotive, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, INICnet, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, memBrain, Mindi, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. 

Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. 

GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. 

All other trademarks mentioned herein are property of their respective companies. 

- © 2018, Microchip Technology Incorporated, All Rights Reserved. ISBN: 978-1-5224-3438-2 

## == == **ISO/TS 16949** 

DS20005454A-page  15 

 2018 Microchip Technology Inc. 

## **Worldwide Sales and Service** 

## **AMERICAS** 

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**Austin, TX** Tel: 512-257-3370 

**Boston** Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 

**Chicago** Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 

**Dallas** Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 

**Detroit** Novi, MI Tel: 248-848-4000 

**Houston, TX** Tel: 281-894-5983 

**Indianapolis** Noblesville, IN Tel: 317-773-8323 Fax: 317-773-5453 Tel: 317-536-2380 

**Los Angeles** Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Tel: 951-273-7800 

**Raleigh, NC** Tel: 919-844-7510 

**New York, NY** Tel: 631-435-6000 

**San Jose, CA** Tel: 408-735-9110 Tel: 408-436-4270 

**Canada - Toronto** Tel: 905-695-1980 Fax: 905-695-2078 

## **ASIA/PACIFIC** 

**Australia - Sydney** Tel: 61-2-9868-6733 **China - Beijing** Tel: 86-10-8569-7000 

**China - Chengdu** Tel: 86-28-8665-5511 

**China - Chongqing** Tel: 86-23-8980-9588 **China - Dongguan** Tel: 86-769-8702-9880 

**China - Guangzhou** Tel: 86-20-8755-8029 

**China - Hangzhou** Tel: 86-571-8792-8115 

**China - Hong Kong SAR** Tel: 852-2943-5100 

**China - Nanjing** Tel: 86-25-8473-2460 

**China - Qingdao** Tel: 86-532-8502-7355 

**China - Shanghai** Tel: 86-21-3326-8000 

**China - Shenyang** Tel: 86-24-2334-2829 

**China - Shenzhen** Tel: 86-755-8864-2200 

**China - Suzhou** Tel: 86-186-6233-1526 

**China - Wuhan** Tel: 86-27-5980-5300 

**China - Xian** Tel: 86-29-8833-7252 

**China - Xiamen** Tel: 86-592-2388138 

**China - Zhuhai** Tel: 86-756-3210040 

## **ASIA/PACIFIC** 

**India - Bangalore** Tel: 91-80-3090-4444 **India - New Delhi** Tel: 91-11-4160-8631 

**India - Pune** Tel: 91-20-4121-0141 **Japan - Osaka** Tel: 81-6-6152-7160 

**Japan - Tokyo** Tel: 81-3-6880- 3770 

**Korea - Daegu** Tel: 82-53-744-4301 

**Korea - Seoul** Tel: 82-2-554-7200 

**Malaysia - Kuala Lumpur** Tel: 60-3-7651-7906 

**Malaysia - Penang** Tel: 60-4-227-8870 **Philippines - Manila** Tel: 63-2-634-9065 

**Singapore** Tel: 65-6334-8870 **Taiwan - Hsin Chu** Tel: 886-3-577-8366 

**Taiwan - Kaohsiung** Tel: 886-7-213-7830 

**Taiwan - Taipei** Tel: 886-2-2508-8600 

**Thailand - Bangkok** Tel: 66-2-694-1351 

**Vietnam - Ho Chi Minh** Tel: 84-28-5448-2100 

## **EUROPE** 

**Austria - Wels** Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 

**Denmark - Copenhagen** Tel: 45-4450-2828 Fax: 45-4485-2829 

**Finland - Espoo** Tel: 358-9-4520-820 

**France - Paris** Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 

**Germany - Garching** Tel: 49-8931-9700 

**Germany - Haan** Tel: 49-2129-3766400 **Germany - Heilbronn** Tel: 49-7131-67-3636 

**Germany - Karlsruhe** Tel: 49-721-625370 

**Germany - Munich** Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 **Germany - Rosenheim** Tel: 49-8031-354-560 

**Israel - Ra’anana** Tel: 972-9-744-7705 

**Italy - Milan** Tel: 39-0331-742611 Fax: 39-0331-466781 

**Italy - Padova** Tel: 39-049-7625286 

**Netherlands - Drunen** Tel: 31-416-690399 Fax: 31-416-690340 

**Norway - Trondheim** Tel: 47-7288-4388 

**Poland - Warsaw** Tel: 48-22-3325737 

**Romania - Bucharest** Tel: 40-21-407-87-50 

**Spain - Madrid** Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 

**Sweden - Gothenberg** Tel: 46-31-704-60-40 

**Sweden - Stockholm** Tel: 46-8-5090-4654 

**UK - Wokingham** Tel: 44-118-921-5800 

Fax: 44-118-921-5820 

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 2018 Microchip Technology Inc. 

08/15/18