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IXTP12N65X2
Power MOSFET, X2-Class, N Channel, 650 V, 12 A, 0.3 ohm, TO-220AB, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Po
- MSL: MSL 1 - Unlimited
- SVHC: Lead (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 180W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220AB
- Drain Source Voltage Vds: 650V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 12A
- Drain Source On State Resistance: 0.3ohm
- Gate Source Threshold Voltage Max: 4.5V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.52 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **X2-Class IXTA12N65X2 Power MOSFET IXTP12N65X2 IXTH12N65X2** **V = 650V DSS I = 12A D25** > **R 300m DS(on)** N-Channel Enhancement Mode |N-Channel Enhancement Mode<br>**Symbol**|N-Channel Enhancement Mode<br>**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**<br>2|G<br>S<br>**TO-263 (IXTA)**<br>~~»~~|G<br>S<br>**TO-263 (IXTA)**<br>~~»~~|G<br>S<br>**TO-263 (IXTA)**<br>~~»~~|G<br>S<br>**TO-263 (IXTA)**<br>~~»~~| |---|---|---|---|---|---|---|---| |**VDSS**|TJ = 25C to 150C|650|V|**TO-220 (IXTP)**|D (Tab)||| |**VDGR**|TJ = 25C to 150C, RGS= 1M|650|V||||| |**VGSS**|Continuous|30|V||||| |**VGSM**<br>Transient<br>40<br>V<br>~~So~~|||||||| |**ID25**<br>**IDM**|TC = 25C<br>TC = 25C, Pulse Width Limited by TJM|12<br>24|A<br>A|S<br>G<br>D|D (Tab)||| |**IA**|TC = 25C|6|A|**TO-247 (IXTH)**|||| |**EAS**|TC = 25C|300|mJ||||| |**dv/dt**I|IS IDM, VDD VDSS, TJ 150°C 15 V/ns|150°C 15 V/ns|150°C 15 V/ns||||| |**PD**<br>**TJ**<br>**TJM**<br>**Tstg**|TC = 25C|180<br>-55 ... +150<br>150<br>-55 ... +150|W<br>C<br>C<br>C|G = Gate D = Drain<br>S = Source Tab = Drain<br>G<br>S<br>D(Tab)<br>D|||| |**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300|°C||||| |**TSOLD**|1.6 mm (0.062in.) from Case for 10s 260|1.6 mm (0.062in.) from Case for 10s 260|°C|**Features**|||| |**FC**|Mounting Force (TO-263) 10.65 / 2.2..14.6 N/lb|Mounting Force (TO-263) 10.65 / 2.2..14.6 N/lb|Mounting Force (TO-263) 10.65 / 2.2..14.6 N/lb||||| |**Md**|Mounting Torque (TO-220 & TO-247)|1.13 / 10 Nm/lb.in|1.13 / 10 Nm/lb.in|International Standard Packages|||International Standard Packages| |**Weight**|TO-263<br>2.5|2.5|g|International Standard Packages<br>Low RDS(ON)and QG||International Standard Packages|International Standard Packages| |TO-220|TO-220<br>3.0|3.0|g|Avalanche Rated|||| |TO-247|TO-247|6.0 g|6.0 g|Low Package Inductance|||| G = Gate D = Drain S = Source Tab = Drain - International Standard Packages - Low RDS(ON) and QG ## **Advantages** |**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 250μA<br>650|~~7~~|V| |**VGS(th)**<br>VDS = VGS, ID= 250μA<br>2.5 4.5 V|4.5 V<br>~~7~~<br>~~_~~|4.5 V| |**IGSS**<br>VGS =30V, VDS= 0V<br>|<br>~~_~~<br>~~_~~|100 nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>50|5<br>50<br>~~__~~|5A<br>50A| |**RDS(on)**<br>VGS = 10V, ID= 0.5**•**ID25, Note 1|300 m<br>~~_~~|300 m| - High Power Density - Easy to Mount - Space Savings ## **Applications** - Switch-Mode and Resonant-Mode - Power Supplies DC-DC Converters - PFC Circuits - AC and DC Motor Drives - Robotics and Servo Controls DS100670C(6/18) © 2018 IXYS CORPORATION, All Rights Reserved ## **IXTA12N65X2 IXTP12N65X2 IXTH12N65X2** |**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>|**Symbol**<br>**Test Conditions Characteristic Values**<br>| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**| |**gfs**<br>VDS= 10V, ID= 0.5 • ID25, Note 1 6.6|11.0|S| |**RGi**<br>Gate Input Resistance<br>|4|| |**Ciss**<br> <br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br> <br>**Crss**<br>|1100<br>830<br>1.5|pF<br>pF<br>pF| |**Co(er)**<br> <br>**Co(tr)**<br> <br>**Effective Output Capacitance**<br>Energy related<br>Time related<br>VGS= 0V<br>VDS= 0.8 • VDSS|53<br>190|pF<br>pF| |**td(on)**<br> <br>**tr**<br> <br>**td(off)**<br> <br>**tf**<br> <br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • ID25<br>RG= 20(External)|23<br>24<br>52<br>16|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br> <br>**Qgs**<br>VGS= 10V, VDS= 0.5**•**VDSS, ID= 0.5**•**ID25<br> <br>**Qgd**<br>|17.7<br>5.5<br>5.5|nC<br>nC<br>nC| |**RthJC**<br> <br>**RthCS**<br>TO-220<br>TO-247|<br>0.50<br>0.21|0.69C/W<br> C/W<br> C/W| ## **Source-Drain Diode** |**Symbol**<br>**Test Conditions Characteristic Values**|**Symbol**<br>**Test Conditions Characteristic Values**|**Symbol**<br>**Test Conditions Characteristic Values**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)**Min.**|**Typ.**|**Max**| |**IS**<br>VGS= 0V||12 A| |**ISM**<br>Repetitive, pulse Width Limited by TJM||48 A| |**VSD**<br>IF= IS, VGS= 0V, Note 1||1.4 V| |**trr**<br> <br>**QRM**<br> <br>**IRM**<br> <br>IF= 6A, -di/dt = 100A/μs<br>VR= 100V|270<br>2.5<br>18.5|ns<br>μC<br>A| Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 ## **IXTA12N65X2 IXTP12N65X2 IXTH12N65X2** **==> picture [264 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25 [o] C<br>12<br>VGS = 10V<br> 7V<br>10<br>6V<br>8<br>6<br>4<br>5V<br>2<br>4V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [265 x 443] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 3. Output Characteristics @ TJ = 125 [o] C<br>12<br>VGS = 10V<br> 7V<br>10<br>6V<br>8<br>6<br>5V<br>4<br>2<br>4V<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 6A Value vs.<br> Drain Current<br>4.0<br>VGS = 10V<br>3.5<br>TJ = 125 [o] C<br>3.0<br>2.5<br>2.0<br>T J = 25 [o] C<br>1.5<br>1.0<br>0.5<br>0 4 8 12 16 20 24<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [263 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>28<br>VGS = 10V<br> 8V<br>24<br>7V<br>20<br>16<br>6V<br>12<br>8<br>4 5V<br>0<br>0 5 10 15 20 25 30<br>VDS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **Fig. 4. RDS(on) Normalized to ID = 6A Value vs. Junction Temperature** **==> picture [254 x 182] intentionally omitted <==** **----- Start of picture text -----**<br> 4.0<br>3.5 VGS = 10V<br>3.0<br>2.5 I D = 12A<br>2.0<br>I D = 6A<br>1.5<br>1.0<br>0.5<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature** **==> picture [255 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 1.2<br>1.1 BV DSS<br>1.0<br>0.9<br>0.8 VGS(th)<br>0.7<br>0.6<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ - Degrees Centigrade<br> - Normalized<br>GS(th)<br> / V<br>DSS<br>BV<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved ## **IXTA12N65X2 IXTP12N65X2 IXTH12N65X2** **==> picture [265 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Maximum Drain Current vs. Case Temperature<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [264 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Input Admittance<br>18<br>16<br>14<br>12<br>T J = 125 [o] C<br>10 25 [o] C<br> - 40 [o] C<br>8<br>6<br>4<br>2<br>0<br>3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [538 x 441] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode<br>20 40<br>T J = - 40 [o] C<br>18<br>35<br>16<br>30<br>14 25 [o] C<br>25<br>12<br>10 125 [o] C 20<br>TJ = 125 [o] C<br>8<br>15<br>6 TJ = 25 [o] C<br>10<br>4<br>5<br>2<br>0 0<br>0 2 4 6 8 10 12 14 16 18 20 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>ID - Amperes VSD - Volts<br>Fig. 11. Gate Charge Fig. 12. Capacitance<br>10 10000<br> V DS = 325V<br>8 I D = 6A C iss<br> I G = 10mA 1000<br>6<br>100<br>Coss<br>4<br>10<br>2<br>f = 1 MHz<br>C rss<br>0 1<br>0 2 4 6 8 10 12 14 16 18 1 10 100 1000<br>IXYS Reserves the Right to ChanQGg - NanoCoulombse Limits, Test Conditions, and Dimensions. VDS - Volts<br> - Siemens<br>gf s - AmperesIS<br> - Volts<br>GS<br>V<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> ## **IXTA12N65X2 IXTP12N65X2 IXTH12N65X2** **==> picture [534 x 215] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area<br>11 100<br>10 RDS(on) Limit<br>9 25μs<br>10<br>8<br>100μs<br>7<br>6<br>1<br>5<br>4<br>1ms<br>3 0.1<br> TJ = 150 [o] C 10ms<br>2 TC = 25 [o] C<br> Single Pulse<br>1<br>0.01<br>0<br>10 100 1,000<br>0 100 200 300 400 500 600<br>VDS - Volts VDS - Volts<br> - MicroJoulesOSS - AmperesID<br>E<br>**----- End of picture text -----**<br> **Fig. 15. Maximum Transient Thermal Impedance** **==> picture [524 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: T_12N65X2 (X3-S602) 1-06-16 ## **IXTA12N65X2 IXTP12N65X2 IXTH12N65X2** **==> picture [65 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> TO-263 Outline<br>Pa<br>/ |<br>=<br>tah<br>eri<br>i Wl<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> **==> picture [137 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220 Outline<br>[— ; oP =n<br>a in<br>]<br>o A}<br>1 23<br>a |<br>u<br>L<br>fel cle xb3x b2<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> **==> picture [161 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247 Outline<br>= .<br>te pr *, we<br>Looil| OntTT 02<br>ot IT<br>1<br>ws oro<br>tT<br>a<br>‘<br>=<br>ce Vu 1 - Gate<br>v 2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 27, 2026
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