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IXFK44N80P
Power MOSFET, N Channel, 800 V, 44 A, 0.19 ohm, TO-264, Through Hole
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation P
- MSL: -
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 1.2kW
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-264
- Drain Source Voltage Vds: 800V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 44A
- Drain Source On State Resistance: 0.19ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 10.93 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## **Polar[TM]** ## **IXFK44N80P IXFX44N80P** ## **HiperFET[TM] Power MOSFET** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**| |---|---|---|---| |**VDSS**|TJ = 25C to 150C|800|V| |**VDGR**|TJ = 25C to 150C, RGS= 1M|800|V| |**VGSS**|Continuous|30|V| |**VGSM**|Transient|40|V| |**ID25**|TC = 25C|44|A| |**IDM**|TC = 25C, Pulse Width Limited by TJM|100|A| |**IA**|TC = 25C|22|A| |**EAS**|TC = 25C|3.4|J| |**dv/dt**|IS<br>IDM, VDD VDSS, TJ 150C|10|V/ns| |**PD**|TC = 25C|1040|W| |**TJ**||-55 ... +150|C| |**TJM**||150|C| |**Tstg**||-55 ... +150|C| |**TL**|Maximum Lead Temperature for Soldering 300|Maximum Lead Temperature for Soldering 300|°C| |**TSOLD**|1.6 mm (0.062in.) from Case for 10s 260|1.6 mm (0.062in.) from Case for 10s 260|°C| |**Md**|Mounting Torque (TO-264)|1.13/10|Nm/lb.in| |**FC**|Mounting Force (PLUS247) 20..120 /4.5..27 N/lb|Mounting Force (PLUS247) 20..120 /4.5..27 N/lb|Mounting Force (PLUS247) 20..120 /4.5..27 N/lb| |**Weight**|TO-264|10|g| ||PLUS247|6|6g| **V = 800V DSS I = 44A D25 R 190m DS(on)** **==> picture [106 x 79] intentionally omitted <==** **----- Start of picture text -----**<br> TO-264 (IXFK)<br>G<br>D<br>S<br>Tab<br>**----- End of picture text -----**<br> ## **PLUS247 (IXFX)** **==> picture [113 x 51] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>D<br>S Tab<br>G = Gate D = Drain<br>S = Source Tab = Drain<br>**----- End of picture text -----**<br> ## **Features** - International Standard Packages - Fast Intrinsic Diode - Avalanche Rated - Low R DS(on) - Low Package Inductance ## **Advantages** |**Symbol**<br>(T= 25C Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C Unless Otherwise Specified)**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**BVDSS**<br>VGS = 0V, ID= 800μA 800<br>~~|~~|~~|~~<br>~~|~~|V| |**VGS(th)**<br>VDS = VGS, ID= 8mA 3.0 5.0<br>~~|~~<br>~~|~~|= 8mA 3.0 5.0<br>~~|~~<br>~~|~~<br>~~|~~|= 8mA 3.0 5.0<br>V| |**IGSS**<br>VGS =30V, VDS= 0V<br>~~|~~<br>~~|~~|<br>~~|~~<br>~~|~~|200<br>nA| |**IDSS**<br>VDS = VDSS, VGS= 0V<br>TJ= 125C<br>1.5 mA<br>~~|~~|50<br>1.5 mA<br>~~|_~~|50A<br>1.5 mA| |**RDS(on)**<br>VGS = 10V, ID= 22A, Note 1|190 m<br>~~|~~|190 m| - Easy to Mount - Space Savings - High Power Density © 2018 IXYS CORPORATION, All Rights Reserved DS99478F(12/18) **==> picture [87 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> IXFK44N80P<br>IXFX44N80P<br>**----- End of picture text -----**<br> |**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**gfs**<br>VDS= 20V, ID= 22A, Note 1 27 43|= 22A, Note 1 27 43|S| |**Ciss**<br>12<br>**Coss**<br>VGS= 0V, VDS= 25V, f = 1MHz<br>910<br>**Crss**<br>30|12<br>910<br>30|nF<br>pF<br>pF| |**td(on)**<br> <br>**tr**<br>22<br>**td(off)**<br>75<br>**tf**<br>27<br>**Resistive Switching Times**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • IDSS<br>RG= 1(External)|28<br>22<br>75<br>27<br>~~_~~|ns<br>ns<br>ns<br>ns| |**Qg(on)**<br>198<br>**Qgs**<br>VGS= 10V, VDS= 0.5 • VDSS, ID= 0.5 • IDSS<br>67<br>**Qgd**<br>65|198<br>67<br>65<br>~~_~~|nC<br>nC<br>nC| |**RthJC**<br>0.12<br>**RthCS**<br>0.15|0.12<br>0.15<br>~~a~~|0.12C/W<br>C/W| ## **TO-264 Outline** **==> picture [28 x 23] intentionally omitted <==** **----- Start of picture text -----**<br> PINS:<br>1 - Gate<br>2,4 - Drain<br>3 - Source<br>**----- End of picture text -----**<br> ## **Source-Drain Diode** |**Symbol**<br>(T= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |---|---|---| |(TJ= 25C, Unless Otherwise Specified)<br>**Min. Typ. Max.**|**Min. Typ. Max.**|**Min. Typ. Max.**| |**IS**<br>VGS= 0V|44 A|44 A| |**ISM**<br>Repetitive, Pulse Width Limited by TJM|100 A|100 A| |**VSD**<br>IF= 44A, VGS= 0V, Note 1|1.5 V|1.5 V| |**trr**<br>250 ns<br>**IRM**<br>8.0 A<br>**QRM**<br>0.8 μC<br>IF= 22A, VGS= 0V<br>-di/dt = 100A/s<br>VR= 100V|250 ns<br>8.0 A<br>0.8 μC|250 ns<br>8.0 A<br>0.8 μC| Note 1. Pulse test, t 300s, duty cycle, d 2%. ## **PLUS247[TM] Outline** PINS: 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 ## **IXFK44N80P IXFX44N80P** **==> picture [538 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics @ TJ = 25 [o] C Fig. 2. Extended Output Characteristics @ TJ = 25 [o] C<br>45 100<br>40 V GS = 10V 90 VGS = 10V<br>80<br>35<br>6V 7V<br>70<br>30<br>60<br>25 6V<br>50<br>20<br>40<br>15<br>30<br>10<br>20<br>5V 5V<br>5 10<br>0 0<br>0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30<br>VDS - Volts VDS - Volts<br> - Amperes - Amperes<br>ID ID<br>**----- End of picture text -----**<br> **Fig. 3. Output Characteristics @ TJ = 125[o] C** **==> picture [265 x 400] intentionally omitted <==** **----- Start of picture text -----**<br> 45<br>V GS = 10V<br>40<br>6V<br>35<br>30<br>25<br>20<br>5V<br>15<br>10<br>5<br>0<br>0 2 4 6 8 10 12 14 16<br>VDS - Volts<br>Fig. 5. RDS(on) Normalized to ID = 22A Value vs.<br>Drain Current<br>2.4<br>2.2 VGS = 10V<br>TJ = 125 [o] C<br>2.0<br>1.8<br>1.6<br>TJ = 25 [o] C<br>1.4<br>1.2<br>1.0<br>0.8<br>0 10 20 30 40 50 60 70 80 90 100<br>ID - Amperes<br> - Amperes<br>ID<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [264 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 4. RDS(on) Normalized to ID = 22A Value vs.<br>Junction Temperature<br>2.6<br>VGS = 10V<br>2.2<br>I D = 44A<br>1.8<br>I D = 22A<br>1.4<br>1.0<br>0.6<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Degrees Centigrade<br> - Normalized<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **==> picture [265 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 6. Maximum Drain Current vs. Case Temperature<br>50<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TC - Degrees Centigrade<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved **IXFK44N80P IXFX44N80P** **==> picture [260 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 7. Input Admittance<br>80<br>70<br>60<br>50<br>40<br>TJ = 125 [o] C<br> 25 [o] C<br>30<br>- 40 [o] C<br>20<br>10<br>0<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5<br>VGS - Volts<br> - Amperes<br>ID<br>**----- End of picture text -----**<br> **==> picture [260 x 424] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 8. Transconductance<br>90<br>T J = - 40 [o] C<br>80<br>70<br>25 [o] C<br>60<br>50 125 [o] C<br>40<br>30<br>20<br>10<br>0<br>0 10 20 30 40 50 60 70 80<br>ID - Amperes<br>Fig. 10. Gate Charge<br>10<br>9 VDSDS = 400V<br> I D = 22A<br>8<br> I G G = 10mA 10mA<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>QG - NanoCoulombsG - NanoCoulombs - NanoCoulombs<br> - Siemens<br>f s<br>g<br> - Volts<br>GS<br>V<br>**----- End of picture text -----**<br> **==> picture [533 x 424] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge<br>140 10<br>9 VDSDS = 400V<br>120 I D = 22A<br>8<br> I G G = 10mA 10mA<br>100 7<br>6<br>80<br>5<br>60<br>4<br>TJ = 125 [o] C<br>40 3<br>T J = 25 [o] C<br>2<br>20<br>1<br>0 0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 40 60 80 100 120 140 160 180 200<br>VSD - Volts QG - NanoCoulombsG - NanoCoulombs - NanoCoulombs<br>Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area<br>100,000 1000<br>f = 1 MHz<br>RDS(on) Limit<br>Ciss<br>10,000 100<br>25 μs<br>Coss 100μs<br>1,000 10<br>100 1<br>TJ = 150 [o] C 1m s<br>Crss T C = 25 [o] C<br>Single Pulse 10 ms<br>DC<br>10 0.1<br>0 5 10 15 20 25 30 35 40 10 100 1,000<br>VDS - Volts VDS - Volts<br> - Volts<br> - Amperes GS<br>IS V<br> - Amperes<br>ID<br>Capacitance - PicoFarads<br>**----- End of picture text -----**<br> IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. ## **IXFK44N80P IXFX44N80P** **==> picture [538 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 13. Maximum Transient Thermal Impedance<br>1<br>0.1<br>0.01<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>Pulse Width - Seconds<br> - K / W<br>(th)JC<br>Z<br>**----- End of picture text -----**<br> © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF:F_44N80P (93-788)12-14-18-B **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 29, 2026
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