Image not available
Illustrative purposes only
IXFH30N50P
Power MOSFET, PolarFET, N Channel, 500 V, 30 A, 0.2 ohm, TO-247, Through Hole
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd
- MSL: -
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 460W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-247
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 30A
- Drain Source On State Resistance: 0.2ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.28 € |
| Current stock | 50+ |
| Lead time | 30 days |
Datasheet
## **PolarHV[TM ] HiPerFET Power MOSFET** N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode **IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS** **V = 500 V DSS I = 30 A D25 R ≤ 200 m Ω DS(on) t ≤ 200 ns rr** **TO-247 AD (IXFH)** |**Symbol**|**Test Conditions**|**Maximum Ratin**|**Maximum Ratings**||||||| |---|---|---|---|---|---|---|---|---|---| |**VDSS**|TJ = 25°C to 150°C|500|V||||||| |**VDGR**|TJ = 25°C to 150°C; RGS= 1 MΩ|500|V||||D (TAB)||| |**VGSS**|Continuous|±30|V||||||| |**VGSM**|Transient|±40|V|**TO-268 (IXFT)**|||||| |**ID25**<br>TC = 25°C<br>30<br>A<br>**IDM**<br>TC = 25°C, pulse width limited by TJM<br>75<br>A<br>G<br>~~eS~~|||||||||| |**IAR**<br>**EAR**|TC = 25°C<br>TC = 25°C|30<br>40|A<br>mJ|||S|f||| |**EAS**|TC = 25°C|1.2|J||||D (TAB)||| |**dv/dt**|IS<br>≤IDM, di/dt≤100 A/µs, VDD ≤VDSS,|10|V/ns|**PLUS220 (IXFV)**|**PLUS220 (IXFV)**||||| ||TJ ≤150°C, RG= 5Ω||||||||| |**PD**|TC = 25°C|460|W||||||| |**TJ**<br>**TJM**||-55 ... +150<br>150|°C<br>°C|G<br>S<br>D|||D (TAB)||| |**Tstg**||-55 ... +150|°C||||||| |**TL**|1.6 mm (0.062 in.) from case for 10 s|300|°C|**PLUS220 SMD(IXFV..S)**|**PLUS220 SMD(IXFV..S)**||||| |**TSOLD**|Plastic body for 10 s|260|°C||||||| |**Md**|Mounting torque (TO-247, TO-3P)|1.13/10|Nm/lb.in||||||| |**FC**|Mounting force (PLUS220, PLUS220SMD) 11 65/2.5 15|Mounting force (PLUS220, PLUS220SMD) 11 65/2.5 15|Mounting force (PLUS220, PLUS220SMD) 11 65/2.5 15 N/lb.|||G|||| |**Weight**|PLUS220, PLUS220SMD|4|g|||S|D (TAB)|D (TAB)|D (TAB)| |TO-268|TO-268|5|g||||||| ||TO-247|6|g|G = Gate|G = Gate||D = Drain||| G D S D (TAB) G S D (TAB) G = Gate D = Drain S = Source TAB = Drain ## **Features** |**Symbol**<br>(TJ= 25°C, unless otherwise specified)<br>**Min. Typ.**|**Min. Typ.**|l International standard packages<br>l Unclamped Inductive Switching (UIS)<br>rated<br>l Low package inductance<br>- easy to drive and to protect<br>**Max.**<br>V<br>5.0<br>V<br>±100<br>nA<br>25<br>µA<br>750<br>µA<br>200<br>mΩ<br>**Advantages**<br>l Easy to mount<br>l Space savings<br>l High power density| |---|---|---| |**BVDSS**<br>VGS= 0 V, ID= 250µA<br>500|~~7~~|| |**VGS(th)**<br>VDS= VGS, ID= 4 mA<br>3.0|~~_~~|| |**IGSS**<br>VGS=±30 V, VDS= 0 V|~~_~~|| |**IDSS**<br>VDS= VDSS<br>VGS= 0 V<br>TJ= 125°C|~~=~~|| |**RDS(on)**<br>VGS= 10 V, ID= 0.5 ID25<br>Pulse test, t≤300µs, duty cycle d≤2 %|165|| - l International standard packages - l Unclamped Inductive Switching (UIS) rated DS99414E(04/06) © 2006 IXYS All rights reserved **IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS** |**Symbol**|**Test Conditions**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**| |---|---|---|---|---| ||(TJ= 25°C, unless otherwise specified)|||| |||**Min.**|**Typ.**|**Max.**| |**gfs**|VDS= 20 V; ID= 0.5 ID25, pulse test|17|27|S| |**Ciss**|||4150|pF| |**Coss**|VGS= 0 V, VDS= 25 V, f = 1 MHz||445|pF| |**Crss**|||28|pF| |**td(on)**|||25|ns| |**tr**|VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25||24|ns| |**td(off)**|RG= 5Ω(External)||82|ns| |**tf**|||24|ns| |**Qg(on)**|||70|nC| |**Qgs**|VGS= 10 V, VDS= 0.5 VDSS, ID= 0.5 ID25||27|nC| |**Qgd**|||22|nC| |**RthJC**||||0.27°C/W| |**RthCs**|(TO-247,PLUS220)||0.21|°C/W| |**Source-Drain**|**Diode**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**|**Characteristic Values**| |---|---|---|---|---|---| |||(TJ= 25°C, unless otherwise specified)|||| |**Symbol**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|| |**IS**|VGS= 0 V|||30|A| |**ISM**|Repetitive|||90|A| |**VSD**|IF= IS, VGS= 0 V,|||1.5|V| ||Pulse test, t≤300µs, duty|cycle d≤2 %|||| |**trr**|IF= 25 A; -di/dt = 100 A/µs|||200|ns| |**IRM**|VR= 100 V; VGS= 0 V||6||A| |**QRM**|||0.6||µC| ## **Characteristic Curves** **==> picture [221 x 214] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 1. Output Characteristics<br>@ 25ºC<br>30<br>27 VGS = 10V<br> 8V<br>24<br>21 7V<br>18<br>15<br>12<br>9 6V<br>6<br>3<br>0<br>0 1 2 3 4 5 6 7<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> **Fig. 2. Extended Output Characteristics @ 25ºC** **==> picture [206 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 70<br>VGS = 10V<br>60 8V<br>50<br>7V<br>40<br>30<br>20<br>10<br>6V<br>0<br>0 3 6 9 12 15 18 21 24 27 30<br>VD S - Volts<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 **IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS** **==> picture [500 x 667] intentionally omitted <==** **----- Start of picture text -----**<br> Fig. 3. Output Characteristics Fig. 4. RDS(on) Normalized to 0.5 ID25<br>@ 125ºC Value vs. Junction Temperature<br>30 3.4<br>27 VGS = 10V 3.1 VGS = 10VGS = 10V = 10V<br> 8V<br>24 7V 2.8<br>21 2.5<br>18 2.2<br>6V<br>15 1.9 I D = 30A 30A<br>12 1.6<br>IDD = 15A<br>9 1.3<br>6 1<br>5V<br>3 0.7<br>0 0.4<br>0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150<br>VD S - Volts TJJ - Degrees Centigrade<br>Fig. 5. RDS(on) Normalized to Fig. 6. Drain Current vs. Case<br>0.5 ID25 Value vs. ID Temperature<br>3.4 35<br>3.1 VGS = 10V TJ = 125 º C 30<br>2.8<br>25<br>2.5<br>2.2 20<br>1.9 15<br>1.6<br>10<br>1.3 T J = 25º C<br>5<br>1<br>0.7 0<br>0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125<br>I D - Amperes TCC - Degrees Centigrade<br>Fig. 7. Input Admittance Fig. 8. Transconductance<br>55 60<br>50 55<br>45 50<br>40 45 TJ = -40 º C<br>35 40 25 º C<br>30 35 125º C<br>30<br>25<br> TJ = 125º C 25<br>20 25º C 20<br>15 -40º C 15<br>10<br>10<br>5 5<br>0 0<br>3.5 4 4.5 5 5.5 6 6.5 7 7.5 0 5 10 15 20 25 30 35 40 45 50 55<br>VG S - Volts I D - Amperes<br> - Normalized<br> - Amperes<br>D<br>I<br>D S ( o n )<br>R<br> - Normalized<br> - Amperes<br>D<br>I<br>D S ( o n )<br>R<br> - Amperes - Siemens<br>I D g f s<br>**----- End of picture text -----**<br> **==> picture [234 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 3.4<br>3.1 VGS = 10VGS = 10V = 10V<br>2.8<br>2.5<br>2.2<br>1.9 I D = 30A 30A<br>1.6<br>IDD = 15A<br>1.3<br>1<br>0.7<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br>TJJ - Degrees Centigrade<br> - Normalized<br>D S ( o n )<br>R<br>**----- End of picture text -----**<br> **==> picture [235 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>-50 -25 0 25 50 75 100 125 150<br>TCC - Degrees Centigrade<br> - Amperes<br>D<br>I<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved ## **IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS** **Fig. 9. Source Current vs. Source-To-Drain Voltage** **==> picture [232 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>80<br>70<br>60<br>50<br>40<br>TJ = 125º C<br>30<br>TJ = 25º C<br>20<br>10<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1 1.1<br>VS D - Volts<br> - Amperes<br>S<br>I<br>**----- End of picture text -----**<br> **Fig. 10. Gate Charge** **==> picture [228 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 V DS = 250V<br>8 I D = 15A<br>7 IG = 10mA<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60 70<br>Q G - nanoCoulombs<br> - Volts<br>G S<br>V<br>**----- End of picture text -----**<br> **Fig. 11. Capacitance** **Fig. 12. Forward-Bias Safe Operating Area** **==> picture [499 x 398] intentionally omitted <==** **----- Start of picture text -----**<br> 10000 100<br>RDS(on) Limit<br>Ciss<br>1000 25µs<br>100µs<br>10<br>Coss<br>1ms<br>100<br>10ms<br>Crs TJ = 150ºC DC<br>f = 1MHz TC = 25ºC<br>10 1<br>0 5 10 15 20 25 30 35 40 10 100 1000<br>VD S - Volts VD S - Volts<br>Fig. 13. M axim um Transient Therm al Resistance<br>1.00<br>0.10<br>0.01<br>0.1 1 10 100 1000<br>Pulse Width - milliseconds<br> - Amperes<br>D<br>I<br>Capacitance - picoFarads<br>ºC / W<br> -<br>( t h ) J C<br>R<br>**----- End of picture text -----**<br> IXYS reserves the right to change limits, test conditions, and dimensions. **IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS** ## **Package Outline Drawings** |**TO-247 (IXFH) Outline**<br>Terminals: 1 - Gate<br>2 - Drain<br>3 - Source<br>Tab - Drain<br>1 2 3<br>t—c—|<br>edt<br>if<br>G)<br>; os<br>oth TNF<br>Lil<br>T<br>L<br>|<br>af<br>" S :<br>UE| |---| |Dim.<br>Millimeter<br>Inches<br>Min.<br>Max.<br>Min.<br>Max.| |A<br>4.7<br>5.3<br>.185<br>.209<br>A1<br>2.2<br>2.54<br>.087<br>.102<br>A2<br>2.2<br>2.6<br>.059<br>.098| |b<br>1.0<br>1.4<br>.040<br>.055<br>b1<br>1.65<br>2.13<br>.065<br>.084<br>b2<br>2.87<br>3.12<br>.113<br>.123| |C<br>.4<br>.8<br>.016<br>.031<br>D<br>20.80<br>21.46<br>.819<br>.845<br>E<br>15.75<br>16.26<br>.610<br>.640| |e<br>5.20<br>5.72<br>0.205 0.225<br>L<br>19.81<br>20.32<br>.780<br>.800<br>L1<br>4.50<br>.177| |∅P<br>3.55<br>3.65<br>.140<br>.144<br>Q<br>5.89<br>6.40<br>0.232 0.252| |R<br>4.32<br>5.49<br>.170<br>.216<br>S<br>6.15 BSC<br>242 BSC| **==> picture [93 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> TO-268 (IXFT) Outline<br>**----- End of picture text -----**<br> **==> picture [105 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> PLUS220 (IXFV) Outline<br>**----- End of picture text -----**<br> **==> picture [136 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> PLUS220SMD (IXFV_S) Outline<br>**----- End of picture text -----**<br> © 2006 IXYS All rights reserved **==> picture [157 x 46] intentionally omitted <==** Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Updated at April 29, 2026
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →