IRGP4790PBF
IGBT, N-CH, 140 A, 1.7 V, 455 W, 650 V, TO-247AC, 3 Pins
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 455W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AC
- Operating Temperature Max: 175°C
- Continuous Collector Current: 140A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 2.33 € |
| Current stock | 10+ |
| Lead time | 30 days |
International
IRGP4790PbF IRGP4790-EPbF
## _**Insulated Gate Bipolar Transistor**_
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VCES = 650V<br>C<br>IC = 90A, TC =100°C<br>tSC 5.5µs, TJ(max) = 175°C E<br>G E<br>C<br>G<br>VCE(ON) typ. = 1.7V @ IC = 75A E G [C ]<br>n-channel IRGP4790PbF IRGP4790‐EPbF<br>Applications TO‐247AC TO‐247AD<br>Industrial Motor Drive<br>G C E<br>UPS<br>Gate Collector Emitter<br>Solar Inverters<br>[[_ ><br>**----- End of picture text -----**<br>
## **Applications**
- Industrial Motor Drive
- UPS
- Solar Inverters Welding
## **Features Benefits** ~~gO~~ Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 5.5µs Short Circuit SOA Rugged Transient Performance
Square RBSOA
~~I~~ Maximum Junction Temperature 175°C Increased Reliability ~~a~~ Positive VCE (ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation ~~a~~ Lead-Free, RoHs compliant Environmentally friendly
|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRGP4790PbF|TO-247AC|Tube|25|IRGP4790PbF|
|IRGP4790-EPbF|TO-247AD|Tube|25|IRGP4790-EPbF|
## **Absolute Maximum Ratings**
|**Absolute Maximum Ratings**|**Absolute Maximum Ratings**|||
|---|---|---|---|
||**Parameter**|**Max.**|**Units**|
|VCES|Collector-to-Emitter Voltage|650|V|
|IC @TC= 25°C|Continuous Collector Current|140|A<br>V|
|IC @TC= 100°C|Continuous Collector Current|90||
|ICM|Pulse Collector Current, VGE=15V|225||
|ILM|Clamped Inductive Load Current, VGE=20V|300||
|VGE|Continuous Gate-to-Emitter Voltage|±20||
|PD @TC= 25°C|Maximum Power Dissipation|455|W|
|PD@ TC =100°C|Maximum Power Dissipation|230||
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-40 to +175|C|
||Soldering Temperature, for 10 sec.|300 (0.063 in. (1.6mm) from case)||
||Mounting Torque, 6-32 or M3 Screw|10 lbf·in (1.1 N·m)||
## **Thermal Resistance**
||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|---|
|RJC|Thermal Resistance Junction-to-Case|–––|–––|0.33|°C/W|
|RCS|Thermal Resistance,Case-to-Sink(flat, greased surface)|–––|0.24|–––||
|RJA|Thermal Resistance,Junction-to-Ambient(typical socket mount)|–––|40|–––||
RJA
1 ~~ys~~
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## IRGP4790PbF/IRGP4790-EPbF ~~[CF~~
## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
|~~—~~|**Parameter**<br>~~eee~~|**Min.**<br>~~eee~~|**Typ. **<br>~~eee~~|**Max****Units**<br>~~eee~~|**Units**<br>~~Oe~~|**Conditions**<br>~~Oe~~|
|---|---|---|---|---|---|---|
|Qg<br>~~—~~|Total Gate Charge (turn-on)<br>~~eee~~|—<br>~~eee~~|140<br>~~eee~~|210<br>~~eee~~|nC<br>~~Oe~~|IC= 75A<br>VGE= 15V<br>VCC= 400V<br>~~Oe~~|
|g<br>Qge<br>~~—~~|Gate-to-Emitter Charge (turn-on)<br>~~eee~~|—<br>~~eee~~|50<br>~~eee~~|80<br>~~eee~~|||
|ge<br>Qgc<br>~~—~~|Gate-to-Collector Charge (turn-on)<br>~~eee~~|—<br>~~eee~~|60<br>~~eee~~|90<br>~~eee~~|||
|gc<br>Eon<br>~~—~~<br>~~—————~~|Turn-OnSwitchingLoss<br>~~eee~~<br>~~—————~~|—<br>~~eee~~<br>~~—————~~|2.5<br>~~eee~~<br>~~—————~~|3.4<br>~~eee ~~<br>~~—————~~|mJ <br> ~~Oe~~<br>~~—————~~<br>|IC= 75A, VCC= 400V, VGE=15V<br>RG= 10, L = 200µH, TJ= 25°C<br>Energy losses include tail & diode<br>reverse recovery<br>~~Oe~~|
|Eoff<br>~~—————~~|Turn-OffSwitchingLoss<br>~~—————~~|—<br>~~—————~~|2.2<br>~~—————~~|3.0<br>~~—————~~|||
|Etotal<br>~~—————~~<br>~~——~~<br>~~——~~|Total SwitchingLoss<br>~~—————~~<br>~~——~~<br>|—<br>~~—————~~<br>~~——~~<br>~~Gs~~<br>|4.7<br>~~—————~~<br>~~——~~<br>|6.4<br>~~—————~~<br>~~——~~<br>|||
|td(on)<br>~~——~~<br>~~es~~<br>~~——~~|Turn-On delay time<br>~~——~~<br>~~es~~<br>~~ae~~|—<br>~~——~~<br>~~es~~<br>~~Gs~~<br>~~ae~~|50<br>~~——~~<br>~~es~~<br>~~ae~~|70<br>~~——~~<br>~~es~~<br>~~ae~~|ns<br>~~ae~~||
|d(on)<br>tr<br>~~——~~<br>~~es~~<br>~~——~~|Rise time<br>~~——~~<br>~~es~~<br>~~ae~~|—<br>~~——~~<br>~~es~~<br>~~Gs~~<br>~~ae~~|70<br>~~——~~<br>~~es~~<br>~~ae~~|90<br>~~——~~<br>~~es~~<br>~~ae~~|||
|td(off)<br>~~es~~<br>~~——~~|Turn-Off delay time<br>~~es~~<br>~~ae~~|—<br>~~es~~<br>~~Gs~~<br>~~ae~~|200<br>~~es~~<br>~~ae~~|225<br>~~es~~<br>~~ae~~|||
|d(off)<br>tf<br>~~——~~<br>~~—~~|Fall time<br>~~ae~~<br>~~ee~~|—<br>~~Gs~~<br>~~ae~~<br>~~oo~~|60<br>~~ae~~<br>~~oo~~|80<br>~~ae~~<br>~~oo~~|||
|Eon<br>~~——~~<br>~~—~~|Turn-On Switching Loss<br><br>~~ee~~|—<br>~~Gs~~<br><br>~~oo~~|3.9<br><br>~~oo~~|—<br><br>~~oo~~|mJ<br>|IC= 75A, VCC= 400V, VGE=15V<br>RG= 10, L = 200µH, TJ= 175°C<br>Energy losses include tail & diode<br>reverse recovery<br>~~oe~~|
|Eoff<br>~~—~~<br>~~ee~~|Turn-Off SwitchingLoss<br>~~ee~~|—<br>~~oo~~|2.8<br>~~oo~~|—<br>~~oo~~|||
|Etotal<br>~~—~~<br>~~ee~~<br>~~ee~~|Total SwitchingLoss<br>~~ee~~|—<br>~~oo~~|6.7<br>~~oo~~|—<br>~~oo~~|||
|td(on)<br>~~—~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-On delaytime<br>~~ee ~~|—<br> ~~oo~~|50<br>~~oo ~~|—<br> ~~oo~~|ns<br>~~Tian oe~~||
|tr<br>~~ee~~<br>~~ee~~|Rise time|—|70|—|||
|td(off)<br>~~ee~~<br>~~—~~|Turn-Off delaytime|—|240|—|||
|tf<br>~~—~~<br>~~esa~~|Fall time<br>~~Tian~~|—<br>~~Tian~~|70<br>~~Tian~~|—<br>~~Tian~~|||
|Cies<br>~~esa~~|Input Capacitance<br>~~Tian~~|—<br>~~Tian~~|4300<br>~~Tian~~|—<br>~~Tian~~|pF<br>~~Tian oe~~|VGE= 0V<br>VCC= 30V<br>f = 1.0MHz<br>~~oe~~|
|Coes<br>~~esa~~|Output Capacitance<br>~~Tian~~|—<br>~~Tian~~|230<br>~~Tian~~|—<br>~~Tian~~|||
|Cres<br>~~a~~|Reverse Transfer Capacitance<br>~~Tian~~|—<br>~~Tian~~|120<br>~~Tian~~|—<br>~~Tian~~|||
|RBSOA<br>~~a~~<br>~~pf~~|Reverse Bias Safe Operating Area<br>~~Tian~~<br>~~pf~~|FULL SQUARE<br>~~Tian~~|||~~Tian oe~~|TJ= 175°C, IC= 300A<br>VCC= 520V, Vp ≤ 650V<br>VGE= +20V to 0V<br>~~oe~~|
|SCSOA<br>~~a~~<br>~~pf~~|Short Circuit Safe Operating Area<br>~~Tian~~<br>~~pf~~|5.5<br>~~Tian~~|—<br>~~Tian~~|—<br>~~Tian~~|µs <br>~~Tian oe~~|TJ= 150°C,VCC= 400V, Vp ≤ 650V<br>VGE= +15V to 0V<br>~~oe~~|
## **Notes:**
- VCC = 80% (VCES), VGE = 20V.
- R is measured at TJ of approximately 90°C.
- Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
- Maximum limits are based on statistical sample size characterization.
- Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
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~~IGR~~
IRGP4790PbF/IRGP4790-EPbF ~~(nnn~~
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140<br>For both:<br>Duty cycle : 50%<br>| ill<br>120 Tj = 175°C<br>Tcase = 100°C<br>Gate drive as specified<br>100 Power Dissipation = 208.3W<br>a Square Wave: AS<br>80<br>VCC<br>60 I<br>eo lll<br>40 Diode as specified<br>HETTT<br>PSH<br>20 FT EE<br>0.1 1 10 100<br>f , Frequency ( kHz )<br>Fig. 1 - Typical Load Current vs. Frequency<br> (Load Current = IRMS of fundamental)<br>160<br>500<br>140<br>120 aSEE 400 TTTN TT<br>100<br>300<br>80 PPR BNE<br>60 HEE NS ; 200 oNNONO<br>40<br>tt IN 100 EREANE<br>20 ee<br>0<br>0<br>HEE EEN PLE TERK<br>25 50 75 100 125 150 175<br>25 50 75 100 125 150<br> TC (°C)<br> TC (°C)<br>Fig. 2 - Maximum DC Collector Current vs. Fig. 3 - Power Dissipation vs.<br>Case Temperature Case Temperature<br>1000 1000<br>100<br>as 10µsec 100<br>10 100µsec<br>1msec 10<br>1 QI<br>Tc = 25°C DC<br>Tj = 175°C<br>Single Pulse<br>aie<br>0.1 1<br>1 10 100 1000 10000 10 100<br>VCE (V) VCE (V)<br>IC (A)<br>IC (A) IC (A)<br>Ptot (W)<br>Load Current ( A )<br>**----- End of picture text -----**<br>
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500<br>400 N<br>300<br>BNE<br>200 oNNONO<br>100 EREANE<br>0<br>PLE TERK<br>25 50 75 100 125 150 175<br> TC (°C)<br>Fig. 3 - Power Dissipation vs.<br>Case Temperature<br>1000<br>100<br>10<br>1<br>10 100 1000<br>VCE (V)<br>IC (A)<br>Ptot (W)<br>**----- End of picture text -----**<br>
**Fig. 2** - Maximum DC Collector Current vs.
**Fig. 4** - Forward SOA TC = 25°C; TJ ≤ 175°C; VGE = 15V
**Fig. 5** - Reverse Bias SOA
TJ = 175°C; VGE = 20V
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IRGP4790PbF/IRGP4790-EPbF ~~[~~
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300<br>VGE = 18V<br>250 V GE = 15V<br>| fE<br>VGE = 12V<br>200 V GE = 10V<br>| ery VGE = 8.0V<br>150<br>| Wer A<br>100<br>VA |<br>50<br>ft Ae | |<br>TI<br>0 FELL<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
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300<br>VGE = 18V<br>250 V GE = 15V<br>| |<br>VGE = 12V<br>200 V GE = 10V<br>| A VGE = 8.0V<br>150<br>[fy7a<br>100<br>VV<br>50<br>FALL|<br>JLA<br>0 | | |<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br>
**Fig. 6** - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs
**Fig. 7** - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs
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300 12<br>VGE = 18V<br>250 VGE = 15V 10<br>VGE = 12V t/ {| Pt ICE = 38A<br>200 V GE = 10V 8 I CE = 75A<br>VGE = 8.0V TY{ | pH ICE = 150A<br>150 6<br>KN | als<br>100 LARS | 4 |e<br>50 | YR‘ 2 |<br>0 Van 0 i eee<br>0 2 4 6 8 10 5 10 15 20<br> VCE (V) VGE (V)<br>Fig. 8 - Typ. IGBT Output Characteristics Fig. 9 - Typical VCE vs. VGE<br>TJ = 175°C; tp = 20µs TJ = -40°C<br>12 12<br>10 Pty 10 Pitt ft<br>ICE = 38A ICE = 38A<br>8 I CE = 75A 8 ICE = 75A<br>ICE = 150A ICE = 150A<br>64 He]alatt 64 |Elbe+e<br>2 2<br>a ieee<br>0 ee 0 |PEE|tf<br>5 10 15 20 5 10 15 20<br> VGE (V) VGE (V)<br>Fig. 10 - Typical VCE vs. VGE Fig. 11 - Typical VCE vs. VGE<br>TJ = 25°C TJ = 175°C<br>ICE (A)<br>VCE (V)<br>VCE (V)<br>VCE (V)<br>**----- End of picture text -----**<br>
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IRGP4790PbF/IRGP4790-EPbF
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IRGP4790PbF/IRGP4790-EPbF<br>IcR sc(s<br>225 12<br>180 See 10<br>8<br>135<br>EON<br>6<br>90<br>TJ = 25°C<br>4<br>TJ = 175°C EOFF<br>45<br>2<br>0 Bae 0<br>2 Sf 4 6 8 10 12 14 16 0 YW 25 50 75 100 125 150<br> VGE (V)<br>IC (A)<br>Fig. 12 - Typ. Transfer Characteristics Fig. 13 - Typ. Energy Loss vs. IC<br>VCE = 50V; tp = 20µs TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V<br>1000 11<br>10<br>td OFF 9<br>8<br>7<br>tF<br>100<br>6<br>E ON<br>5<br>td<br>ON 4<br>EOFF<br>tR 3<br>2<br>10 0 25 50 75 100<br>0 Ci 50 100 150 Ae Rg ()<br>IC (A)<br>Fig. 14 - Typ. Switching Time vs. IC Fig. 15 - Typ. Energy Loss vs. RG<br>TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V<br>10000 24 400<br>T<br>20 sc I 330<br>sc<br>1000<br>To tdOFF 16 AoE 260<br>t F<br>12 190<br>tR<br>100<br>8 120<br>tdON<br>Ty 4 Ges 50<br>10<br>8 10 12 14 16 18<br>0 20 40 60 80 100 120<br>VGE (V)<br>RG ()<br>Swiching Time (ns)<br>Swiching Time (ns)<br>ICE (A)<br>Time (µs)<br>Energy (mJ)<br>Energy (mJ)<br>Current (A)<br>**----- End of picture text -----**<br>
**Fig. 16** - Typ. Switching Time vs. RG TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V
**Fig. 17** - VGE vs. Short Circuit Time VCC = 400V; TC = 150°C
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IRGP4790PbF/IRGP4790-EPbF ~~(nnn~~
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16<br>14 VCES = 400V<br>TT Yy<br>VCES = 300V<br>12<br>A<br>aeney4e<br>10<br>8<br>CELE<br>6<br>722" 400<br>4<br>DAnnnEnn<br>2<br>A<br>0<br>0 20 40 60 80 100 120 140 160<br>Q G, Total Gate Charge (nC)<br>VGE, Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>
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10000<br>Cies<br>TT —<br>1000 re<br>Coes<br>100 \<br>Cres<br>a<br>10<br>0 100 200 300 400 500<br>VCE (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>
**Fig. 19** - Typical Gate Charge vs. VGE
**Fig. 18** - Typ. Capacitance vs. VCE **Fig. 19** VGE= 0V; f = 1MHz ICE = 75A
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1<br>D = 0.50<br>0.1 TILTee<br>0.200.10 To oe °<br>Ri ( C/W) i (sec)<br>0.05 R 1 R1 R 2 R2 R 3 R3 R 4R4 0.0125052 0.000036<br>0.01 0.020.01 iTo J J1 See 1 2 2 3 3 4 4 CC ee 0.0722526 0.000151<br>0.1389474 0.005683<br>Ci= iRi<br>Ci= iRi<br>0.001 dll 0.1056000 0.029339<br>SINGLE PULSE<br>Notes:<br>( THERMAL RESPONSE )<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001 CemRT<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>
**Fig. 20 -** Maximum Transient Thermal Impedance, Junction-to-Case
**Fig. 27 -** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRGP4790PbF/IRGP4790-EPbF<br>L<br>L<br>80 V +<br>DUT VCC - DUT VCC<br>0<br>1K Rg<br>Pen<br>Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit<br>diode clamp /<br>DUT<br>L<br>4X<br>DC VCC<br>DUT DUT /<br>VCC<br>DRIVER<br>Rg<br>**----- End of picture text -----**<br>
**Fig.C.T.3** - S.C. SOA Circuit
**Fig.C.T.4** - Switching Loss Circuit
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4X<br>DC VCC<br>DUT<br>**----- End of picture text -----**<br>
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C force<br>100K<br>D1 22K<br>C sense<br>DUT<br>G force 0.0075µF<br>E sense<br>E force<br>**----- End of picture text -----**<br>
**Fig.C.T.5** - Resistive Load Circuit
**Fig.C.T.6** - BVCES Filter Circuit
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~~LR~~
IRGP4790PbF/IRGP4790-EPbF ~~#£4x45zZzZ»»_ 777~~
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600 120 600 120<br>tf tr<br>TEST<br>500 100 500 CURRENT 100<br>400 | co 80 400 he 80<br>90% ICE<br>300 jy 60 300 Ae 60<br>90% ICE<br>200 a 40 200 pS 40<br>10% VCE<br>100 ie on 20 100 Pd 20<br>10% ICE 10% ICE 10% VCE<br>0 0 0 0<br>Eoff Loss Eon Loss<br>aioe<br>-100 -20 -100 -20<br>-0.5 0 0.5 1 -0.5 0 0.5<br>time(µs) time (µs)<br>Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform<br>@ TJ = 175°C using Fig. CT.4 @ TJ = 175°C using Fig. CT.4<br>600 600<br>a<br>500 500<br>VCE<br>400 400<br>~ ~<br>300 300<br>ICE<br>200 ey yO 200<br>ef<br>100 100<br>|<br>0 0<br>—o<br>-100 -100<br>-5 0 5 10<br>time (µs)<br> (V) (A) (V) (A)<br>VCE ICE VCE ICE<br>Ice (A)<br>Vce (V)<br>**----- End of picture text -----**<br>
**Fig. WF3** - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
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IRGP4790PbF/IRGP4790-EPbF ~~[CF~~
## TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
## TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
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EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30<br>LOGO Po 135H d<br>IN THE ASSEMBLY LINE "H"<br>_ —- 56 57<br>DATE CODE<br>ASSEMBLY YEAR 1 = 2001<br>Note: "P" in assembly line position<br>LOT CODE WEEK 35<br>indicates "Lead-Free"<br>LINE H<br>**----- End of picture text -----**<br>
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRGP4790PbF/IRGP4790-EPbF ~~[CF~~
## ~~IeaR~~
## TO-247AD Package Outline (Dimensions are shown in millimeters (inches))
## TO-247AD Part Marking Information
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E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E<br>W IT H A S S E M B L Y P A R T N U M B E R<br>L O T C O D E 5 6 5 7 IN T E R N A T IO N A L Dog<br>A S S E M B L E D O N W W 3 5 , 2 0 0 0 R E C T IF IE R<br>L O G O IRGP30B1IeaR 20KD 0 3 5 H -E |<br>IN T H E A S S E M B L Y L IN E "H "<br>5 6 5 7<br>D A T E C O D E<br>A S S E M B L Y YE A R 0 = 2 0 0 0<br>N o te : "P " in a s s e m b ly lin e p o s itio n<br>L O T C O D E W E E K 3 5<br>in d ic a te s "L e a d -F re e "<br>L IN E H<br>**----- End of picture text -----**<br>
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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~~I6aR~~
IRGP4790PbF/IRGP4790-EPbF ~~[CF~~
## **Qualification Information[† ]**
|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-247AC|N/A|
||TO-247AD|N/A|
|**RoHS Compliant**|Yes||
- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
- †† Applicable version of JEDEC standard at the time of product release.
## **Revision History**
|**Revision Historyevision Historyvision Historysion Historyion Historyon Historyn Historystoryryy**||
|---|---|
|**Date**|**Comments**|
|8/22/2014|Updated Temperature Coeff. of Breakdown Voltage from “0.11V/C” to “0.65 V/C” onpage 2 .|
||Updated ICvs. TC graph Fig.2 to matchpage1 spec data onpage 3.|
**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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11 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback August 22, 2014
Updated at February 9, 2023
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