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IRGP4650DPBF
IGBT, 76 A, 1.6 V, 268 W, 600 V, TO-247AC, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 268W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AC
- Operating Temperature Max: 175°C
- Continuous Collector Current: 76A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 3.85 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**==> picture [195 x 149] intentionally omitted <==** - Industrial Motor Drive - Inverters **==> picture [305 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> ULTRAFAST SOFT RECOVERY DIODE<br>C<br>C C<br>G<br>G C [E] G C [E]<br>E<br>TO-247AC TO-247AD<br>n-channel INSULATED IRGP4650DPbF GATEBIPOLAR TRANSISTOR IRGP4650D-EP WITH<br>G C E<br>Gate Collector Emitter<br>**----- End of picture text -----**<br> - UPS - Welding ## **Features** ## **Benefits** |**Features**||**Benefits**|| |---|---|---|---| |Low VCE(ON)and Switching Losses||High efficiency in a wide range of applications and switching<br>frequencies|| |Square RBSOA and Maximum Junction Temperature 175°C||Improved reliability due to rugged hard switching performance<br>and higherpower capability|| |Positive VCE(ON)Temperature Coefficient<br>Excellent current sharing in parallel operation<br>5μs short circuit SOA<br>Enables short circuitprotection scheme<br>~~PCa~~|||| |Lead-Free,RoHS compliant<br>Environmentallyfriendly<br>~~a~~|||| |**Base part number**<br>**Package Type**|**Form**<br>**Quantity**<br>**Standard Pack**<br>**Orderable part number**||| |IRGP4650DPbF<br>TO-247AC|Tube<br>25<br>IRGP4650DPbF||| |IRGP4650D-EPbF<br>TO-247AD|Tube<br>25<br>IRGP4650D-EPbF||| **Absolute Maximum Ratings** |**Absolute Maximum Ratings**|||| |---|---|---|---| |**Absolute Maximum Ratings**|**Parameter**|**Max.**|**Units**| |VCES<br>~~a~~<br>~~SSS~~|Collector-to-Emitter Voltage<br>~~a~~<br>~~G~~<br>~~SSS~~|600<br>~~a~~|V<br>~~a~~| |IC@ TC= 25°C<br>~~a~~<br>~~a~~<br>~~SSS~~|Continuous Collector Current<br>~~SSS~~|76|A| |IC@ TC= 100°C<br>~~a~~<br>~~es~~<br>~~SSS~~|Continuous Collector Current<br>~~SSS~~|50|| |ICM<br>~~a~~<br>~~es~~<br>~~SSS~~|Pulse Collector Current,VGE= 15V<br>~~©~~<br>~~SSS~~|105|| |ILM<br>~~es~~<br>~~GO~~<br>~~SSS~~|Clamped Inductive Load Current,VGE= 20V<br>~~GO~~<br>~~©~~<br>~~SSS~~|140<br>~~GO~~|| |IF@ TC= 25°C<br>~~Qe~~<br>~~Rs~~<br>~~SSS~~|Diode Continous Forward Current<br>~~©~~<br>~~Qe~~<br>~~SSS~~|76<br>~~Qe~~|| |IF@ TC= 100°C<br>~~Rs~~<br>~~SSS~~|Diode Continous Forward Current<br>~~SSS~~|50|| |IFM<br>~~Rs~~<br>~~SSS~~|Diode Maximum Forward Current<br>~~SSS~~|140|| |VGE<br>~~SSS ~~<br>~~|~~|Continuous Gate-to-Emitter Voltage<br> ~~SSS~~<br>~~a~~<br>~~|~~|±20<br>~~a~~<br>~~|~~|V<br>~~|~~| ||Transient Gate-to-Emitter Voltage<br>~~|~~|±30<br>~~|~~|| |PD@ TC= 25°C<br>~~I~~<br>~~es~~|Emitter Voltage<br>Maximum Power Dissipation<br>~~I~~|268<br>~~I~~|W<br>~~I~~| |PD@ TC= 100°C<br>~~I~~<br>~~es~~<br>~~——~~|Maximum Power Dissipation<br>~~I~~|134<br>~~I~~|| |TJ<br>TSTG<br>~~es~~<br>~~——~~|Operating Junction and<br>Storage Temperature Range|-55 to +175|°C| |~~——~~|Soldering Temperature, for 10 sec.|300 (0.063 in. (1.6mm) from case)|| |~~——~~<br>~~Ge~~|Soldering Temperature, for 10 sec.<br>Mounting Torque, 6-32 or M3 Screw<br>~~Ge~~|10 lbf·in (1.1 N·m)<br>~~Ge~~|~~Ge~~| ## ��������������������������� **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** ||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**| |---|---|---|---|---|---|---| |V(BR)CES|Collector-to-Emitter Breakdown Voltage|600|—|—|V|VGE=0V,IC= 100μA�| |ΔV(BR)CES/ΔTJ|TemperatureCoeff. of Breakdown Voltage|—|1.3|—|mV/°C|VGE=0V,IC= 1mA(25°C-175°C)| |VCE(on)|Collector-to-Emitter Saturation Voltage|—|1.60|1.90|V|IC=35A,VGE= 15V,TJ= 25°C| |||—|1.90|—||IC=35A,VGE= 15V,TJ= 150°C| |||—|2.00|—||IC=35A,VGE= 15V,TJ= 175°C| |VGE(th)|Gate Threshold Voltage|4.0|—|6.5|V|VCE= VGE,IC= 1.0mA| |ΔVGE(th)/ΔTJ|Threshold Voltage temp. coefficient|—|-18|—|mV/°C|VCE =VGE, IC =1.0mA (25°C-175°C)| |gfe|Forward Transconductance|—|25|—|S|VCE=50V,IC=35A,PW =60μs| |ICES|Collector-to-Emitter Leakage Current|—|1.0|70|μA|VGE=0V,VCE=600V| |||—|770|—||VGE=0V,VCE=600V,TJ= 175°C| |VFM|Diode Forward Voltage Drop|—|2.0|3.0|V|IF=35A| |||—|1.4|—||IF =35A, TJ =175°C| |IGES|Gate-to-Emitter LeakageCurrent|—|—|±100|nA|VGE= ±20V| |**Switching Characteristics @ TJ = 25°C(unless otherwise specified)**||||||| ||**Parameter**|**Min.**|**Typ.**|**Max.**|**Units**|**Conditions**| |Qg|TotalGateCharge(turn-on)|—|69|104|nC|IC= 35A<br>VGE= 15V<br>VCC =400V| |Qge|Gate-to-EmitterCharge(turn-on)|—|18|27||| |Qgc|Gate-to-Collector Charge (turn-on)|—|29|44||| |Eon|Turn-OnSwitchingLoss|—|390|508|μJ|IC= 35A, VCC= 400V, VGE= 15V<br>RG= 10Ω, L = 200μH, LS= 150nH, TJ= 25°C<br>Energylosses include tail & diode reverse recovery �| |Eoff|Turn-OffSwitchingLoss|—|632|753||| |Etotal|TotalSwitchingLoss|—|1022|1261||| |td(on)|Turn-On delaytime|—|46|56|<br>ns|IC= 35A, VCC= 400V, VGE= 15V<br>RG= 10Ω, L = 200μH, LS= 150nH, TJ= 25°C| |tr|Rise time|—|33|42||| |td(off)|Turn-Off delaytime|—|105|117||| |tf|Fall time|—|44|54||| |Eon|Turn-OnSwitchingLoss|—|1013|—|<br>μJ|IC= 35A, VCC= 400V, VGE=15V<br>RG=10Ω, L=200μH, LS=150nH, TJ= 175°C<br>Energylosses include tail & diode reverse recovery �| |Eoff|Turn-OffSwitchingLoss|—|929|—||| |Etotal|Total Switching Loss|—|1942|—||| |td(on)|Turn-On delaytime|—|43|—|<br>ns|IC= 35A, VCC= 400V, VGE= 15V<br>RG= 10Ω, L = 200μH, LS= 150nH<br>TJ= 175°C| |tr|Rise time|—|35|—||| |td(off)|Turn-Off delaytime|—|127|—||| |tf|Fall time|—|61|—||| |Cies|InputCapacitance|—|2113|—|pF|VGE= 0V<br>VCC= 30V<br>f = 1.0Mhz| |Coes|OutputCapacitance|—|197|—||| |Cres|Reverse TransferCapacitance|—|65|—||| |RBSOA|Reverse Bias Safe Operating Area|FULL SQUARE||||TJ= 175°C, IC= 140A<br>VCC= 480V, Vp�600V<br>Rg= 10Ω,VGE= +20V to0V| |SCSOA|Short Circuit Safe Operating Area|5|—|—|μs|VCC= 400V, Vp�600V<br>Rg= 10Ω,VGE= +15V to0V| |Erec|Reverse RecoveryEnergyof the Diode|—|304|—|μJ|TJ= 175°C<br>VCC= 400V, IF= 35A<br>VGE= 15V,Rg= 10Ω,L =210μH,Ls= 150nH| |trr|Diode Reverse Recovery Time|—|120|—|ns|| |Irr|Peak Reverse Recovery Current|—|25|—|A|| ## **Notes:** - VCC = 80% (VCES), VGE = 20V, L = 19μH, RG = 10 Ω . - R θ is measured at TJ of approximately 90°C. - Refer to AN-1086 for guidelines for measuring V(BR)CES safely. - Pulse width limited by max. junction temperature. - ������������������������������������������������������ ��������������������������������������������������� ������������������������� ������������������������������� � **==> picture [205 x 668] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70 m|f<br>60<br>50 Nee<br>40<br>30<br>2010 PN<br>PPL [IN] \<br>0<br>es<br>25 50 75 100 125 150 175<br> TC (°C)<br>Fig. 1 - Maximum DC Collector Current vs.<br>Case Temperature<br>1000<br>100<br>100μsec<br>10μsec<br>10 aE, Sa) 1msec nell<br>aaa ee ears<br>DC<br>1<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.1<br>MEFS:<br>1 10 100 1000<br>VCE (V)<br>Fig. 3 - Forward SOA<br>TC = 25°C, TJ ≤ 175°C; VGE =15V<br>140<br>VGE = 18V<br>120 nie= V GE = 15V<br>VGE = 12V<br>100 ay/4 V GE = 10V<br>VGE = 8.0V<br>80<br>WZ<br>60<br>| ff eT<br>40 |-Vy | |<br>20<br>fA<br>0 ALE [T] T<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>IC (A)<br>IC (A)<br>**----- End of picture text -----**<br> **Fig. 5** - Typ. IGBT Output Characteristics TJ = -40°C; tp = ≤ 60μs **==> picture [205 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>250<br>200<br>~<br>150<br>100<br>CEPR<br>50 N\<br>0 ERAN<br>25 50 75 100 125 150 175<br> TC (°C)<br>Ptot (W)<br>**----- End of picture text -----**<br> **Fig. 2** - Power Dissipation vs. Case Temperature **==> picture [205 x 433] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>eal<br>po |<br>10<br>1<br>peep ee<br>10 100 1000<br>VCE (V)<br>Fig. 4 - Reverse Bias SOA<br>TJ = 175°C; VGE =20V<br>140<br>VGE = 18V<br>120 | Je VGE = 15V<br>VGE = 12V<br>100 | [A=] VGE = 10V<br>VGE = 8.0V<br>80<br>1<br>60<br>| et<br>40 |_Vyil/|<br>20<br>|<br>yt<br>0 7aa| |<br>0 2 4 6 8 10<br> VCE (V)<br>IC (A)<br>ICE (A)<br>**----- End of picture text -----**<br> **Fig. 6** - Typ. IGBT Output Characteristics TJ = 25°C; tp = ≤ 60μs Submit Datasheet Feedback November November 17, 2014 **==> picture [199 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 140<br>VGE = 18V<br>120 V GE = 15V JA<br>VGE = 12V<br>100 V GE = 10V<br>| |<br>VGE = 8.0V<br>80<br>60<br>TKS<br>40<br>Aw<br>20<br>zane<br>0<br>(AA | |<br>0 2 4 6 8 10<br> VCE (V)<br>ICE (A)<br>**----- End of picture text -----**<br> **Fig. 7** - Typ. IGBT Output Characteristics TJ = 175°C; tp = ≤ 60μs **==> picture [196 x 422] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>18 PAT Ut<br>|<br>16 PJ [tt]<br>14 2<br>12 | lt I CE = 18A<br>10 aaa ICE = 35A<br>8 | ob I CE = 70A<br>6<br>4 iata a a<br>2 a aa<br>Pr<br>0<br>5 10 15 20<br> VGE (V)<br>Fig. 9 - Typical VCE vs. VGE<br>TJ = -40°C<br>20<br>18<br>16 Th<br>ee<br>14<br>12<br>Pye ICE = 18A<br>10<br>ICE = 35A<br>8 I CE = 70A<br>6 mazeree<br>4<br>2 te<br>a<br>0<br>5 10 15 20<br> VGE (V)<br>VCE (V)<br>VCE (V)<br>**----- End of picture text -----**<br> **Fig. 11** - Typical VCE vs. VGE TJ = 175°C **==> picture [196 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 140<br>120 ie<br>100<br>pf<br>-40°C<br>80 25°C<br>175°C<br>60<br>Ay<br>40<br>es ee<br>20<br>s/o<br>0<br>PAY|<br>0.0 1.0 2.0 3.0 4.0<br> VF (V)<br>IF (A)<br>**----- End of picture text -----**<br> **Fig. 8** - Typ. Diode Forward Characteristics tp = 80μs **==> picture [209 x 421] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>18 |<br>1<br>16 itt<br>1<br>14<br>12 1<br>ICE = 18A<br>10 | [tt] I CE = 35A<br>8 nip| ICE = 70A<br>6<br>mn62<br>4<br>id aa<br>2 PLR<br>eee<br>0<br>5 10 15 20<br> VGE (V)<br>Fig. 10 - Typical VCE vs. VGE<br>TJ = 25°C<br>140<br>120<br>SEREERD/2<br>TJ = 25°C<br>100 tt<br>80<br>T VJ J = 175°C<br>60<br>Sanne )0/4 40 00<br>40<br>20 San7 Ann<br>titi<br>0 ES74RRREEE<br>4 5 6 7 8 9 10 11 12 13 14<br> VGE, Gate-to-Emitter Voltage (V)<br>VCE (V)<br>IC, Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br> **Fig. 12** - Typ. Transfer Characteristics VCE = 50V; tp = 60μs **==> picture [200 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 4000<br>3500 TILL<br>3000<br>a /<br>2500<br>een EON 4<br>2000<br>1500 | f|<br>EOFF<br>1000 Oh<br>500 4a<br>0 er<br>0 10 20 30 40 50 60 70<br>IC (A)<br>Energy (μJ)<br>**----- End of picture text -----**<br> **Fig. 13** - Typ. Energy Loss vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10 Ω ; VGE = 15V **==> picture [197 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>SS<br>P+ Pt<br>td OFF<br>PF<br>100<br>tF<br>SEBSEPP<br>SS oe<br>tdON<br>pT<br>tR<br>10 Pritt ttt<br>0 10 20 30 40 50 60 70<br>IC (A)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br> **Fig. 14** - Typ. Switching Time vs. IC TJ = 175°C; L = 200μH; VCE = 400V, RG = 10 Ω ; VGE = 15V **==> picture [476 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 3000 1000<br>2500 | | | pp<br>EON<br>2000 Ue a tdOFF<br>wa pt<br>EOFF 100 |<br>tF<br>1500<br>tdON —$S—_<br>1000 V4 tR | | |<br>J a<br> 7 pp<br>500 KL tL 10 tt<br>0 25 50 75 100 0 10 20 30 40 50<br>Rg ( Ω ) RG ( Ω )<br>Energy (μJ)<br>Swiching Time (ns)<br>**----- End of picture text -----**<br> **Fig. 15** - Typ. Energy Loss vs. RG TJ = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE = 15V **==> picture [199 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> 35<br>RG = 10 Ω<br>30<br>RQREEE<br>25 R G = 22 Ω PT yf<br>20 RG = 47 Ω =<br>=<br>a<br>15 Pr<br>RG = 100 Ω<br>TLL<br>10<br>10 20 30 40 50 60 70<br>IF (A)<br>IRR (A)<br>**----- End of picture text -----**<br> **Fig. 17** - Typ. Diode IRR vs. IF TJ = 175°C **Fig. 16** - Typ. Switching Time vs. RG TJ = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE = 15V **==> picture [201 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> 26<br>24<br>22 At | ff<br>Rw<br>20<br>Nee<br>Nee<br>18 aawe<br>16 NX<br>14 Pt} pé<br>0 20 40 60 80 100<br>RG ( Ω)<br>IRR (A)<br>**----- End of picture text -----**<br> **Fig. 18** - Typ. Diode IRR vs. RG TJ = 175°C **==> picture [201 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> 26<br>24<br>| | ere<br>22<br>ae<br>20<br>|A | |<br>18<br>Yi | | |<br>16 /| | | ft<br>14 ye} | | ff<br>200 300 400 500 600 700<br>diF /dt (A/μs)<br>IRR (A)<br>**----- End of picture text -----**<br> **Fig. 19** - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 35A; TJ = 175°C **==> picture [201 x 419] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>RG = 10 Ω<br>350<br>Pt | |<br>300 RG = 22 Ω<br>| | [E+ +<br>250<br>Pannen<br>RG = 47 Ω<br>200<br>-brit lt Ty<br>150 = RG = 100 Ω<br>Ean<br>100<br>10 20 30 40 50 60 70<br>roadiis<br>IF (A)<br>Fig. 21 - Typ. Diode ERR vs. IF<br>TJ = 175°C<br>10000<br>Iii) Cies<br>1000<br>ee<br>Pp fF<br>KF<br>100 Coes<br>Cres<br>10 SSSEE)ed ee esedee ee<br>0 100 200 300 400 500<br>VCE (V)<br>Energy (μJ)<br>Capacitance (pF)<br>**----- End of picture text -----**<br> **Fig. 23** - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz **==> picture [213 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> 2500<br>2250<br>itty 10 Ω<br>2000 35A<br>70A<br> 22 Ω<br>1750 hea<br>AA \<br> 47 Ω<br>18A<br>1500<br>MA ST<br>100 Ω<br>1250 A<br>1000 PrL L i L<br>100 200 300 400 500 600 700 800 900<br>diF /dt (A/μs)<br>QRR (nC)<br>**----- End of picture text -----**<br> **Fig. 20** - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C **==> picture [253 x 420] intentionally omitted <==** **----- Start of picture text -----**<br> 20 300<br>Isc<br>15 P| | Yl 225<br>Tsc<br>7<br>10 150<br>MZ<br>5 rN 75<br>0 aaa 0<br>8 10 12 14 16 18<br>VGE (V)<br>Fig. 22 - VGE vs. Short Circuit Time<br>VCC = 400V; TC = 25°C<br>16<br>14 V CES = 400V<br>VCES = 300V<br>12 Fly<br>10 Pp LL We<br>8 ee<br>TEL<br>6<br>4<br>2<br>0 0 A nnie<br>0 10 20 30 40 50 60 70<br>Q G, Total Gate Charge (nC)<br>Time (μs)<br>VGE, Gate-to-Emitter Voltage (V)<br>Current (A)<br>**----- End of picture text -----**<br> **Fig. 24** - Typical Gate Charge vs. VGE ICE = 35A; L = 740μH **==> picture [439 x 543] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>a er<br>D = 0.50<br>eta TT TT TTI<br>= anil mmniiill<br>0.20<br>0.1 Se ee en ati el<br>0.10<br>a a ne as? a ee eee eee<br>elar 0.05 τ J τ Jem J cme R 1R1 oie R 2R2 den R 3R3 R 4 R4 τ C τ Ri 0.01041 0.000006(°C/W) τ i (sec) CH LH<br>0.01 — 0.01 0.02 Coeee)TI | τ 1 Ci= τ Fob 1 Ci τ i / Rii / Ri τ 2 τ 2 | τ 3 τ 3 τ 4 τ 4 0.15911 0.23643 0.0020350.15465 0.000142 0.013806 i l<br>Pe oe<br>| ee Notes: 0 ee eeee<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>LZ ( THERMAL RESPONSE ) 00 ee Bani<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 Gill Ne ll<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)<br>10<br>(OO 0 0 OO OO OC OG<br>1<br>Se<br>D = 0.50<br>0.20 re<br>0.1 mn 0.10 a > gl |<br>0.05 R1R1 R2R2 R3R3 R4R4 Ri (°C/W) τ i (sec)<br>0.02 τ J τ J τ C τ 0.01716 0.000031<br>0.01 Cc 0.01 rr τ 1 τ se 1 τ 2 ee τ 2 τ 3 τ 3 τ 4 τ 4 0.35875 0.41334 0.004192 0.000517<br>Se ee TE PT<br>a a oY Ci= Ci τ i / Ri i / Ri a 0.20121 0.024392<br>Notes:<br>0.001 Per mm<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>= ( THERMAL RESPONSE ) en |<br>0.0001 PE<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br> **Fig. 26.** Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) **==> picture [249 x 54] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>DUT VCC<br>0<br>1K<br>**----- End of picture text -----**<br> **Fig.C.T.1** - Gate Charge Circuit (turn-off) **==> picture [81 x 56] intentionally omitted <==** **----- Start of picture text -----**<br> 4X<br>DC VCC<br>DUT<br>**----- End of picture text -----**<br> **==> picture [205 x 114] intentionally omitted <==** **----- Start of picture text -----**<br> L<br>80 V +<br>- DUT VCC<br>Rg<br>**----- End of picture text -----**<br> **Fig.C.T.2** - RBSOA Circuit **==> picture [216 x 131] intentionally omitted <==** **----- Start of picture text -----**<br> diode clamp /<br>DUT<br>L<br>- ) |+<br>-5V<br>DUT /<br>VCC<br>DRIVER<br>:<br>Rg<br>**----- End of picture text -----**<br> SCSOA **Fig.C.T.3** - S.C. SOA Circuit **==> picture [178 x 105] intentionally omitted <==** **----- Start of picture text -----**<br> R = [VCC]<br>ICM<br>VCC<br>DUT<br>Rg<br>**----- End of picture text -----**<br> **Fig.C.T.5** - Resistive Load Circuit **Fig.C.T.4** - Switching Loss Circuit **==> picture [235 x 204] intentionally omitted <==** **----- Start of picture text -----**<br> C force<br>100K<br>D1 22K<br>C sense<br>DUT<br>G force 0.0075μF<br>E sense<br>E force<br>**----- End of picture text -----**<br> **Fig.C.T.6** - BVCES Filter Circuit **==> picture [510 x 608] intentionally omitted <==** **----- Start of picture text -----**<br> 600 60 600 60<br>TEST<br>tf CURRENT<br>500 50 500 50<br>tr<br>400 40 400 40<br>90% ICE<br>300 —— 30 300 iE tele 30<br>90% test<br>current<br>200 20 200 20<br>5% VCE 10% test 5% V CE<br>100 Ty 10 100 = 10<br>2 5% ICE current<br>0 0 0 0<br>Eon<br>i Eoff Loss —— Loss<br>-100 -10 -100 -10<br>-0.5 0 0.5 1 1.5 2 6.4 6.6 6.8 7 7.2<br>time(μs) time (μs)<br>Fig. WF1 - Typ. Turn-off Loss Waveform Fig. WF2 - Typ. Turn-on Loss Waveform<br>@ TJ = 175°C using Fig. CT.4 @ TJ = 175°C using Fig. CT.4<br>40 700 350<br>ICE<br>QRR 600 300<br>30<br>tRR 500 rm. 250<br>20 ren a<br>400 200<br>10<br>FP |} VCE<br>300 150<br>0<br>200 100<br>10%<br>-10 Peak<br>Peak<br>IRR IRR 100 50<br>AS HP<br>-20<br>0 0<br>-30 -100 | -50<br>-0.3 -0.2 -0.1 0 0.1 0.2 -4.5 0.5 5.5 10.5<br>time (μS) Time (uS)<br> (V) (A) (V) (A)<br>VCE ICE VCE ICE<br> (V)F (A)<br>V Vce (V) ICE<br>**----- End of picture text -----**<br> **Fig. WF3** - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 **Fig. WF4** - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" **==> picture [269 x 119] intentionally omitted <==** **----- Start of picture text -----**<br> PART NUMBER<br>INTERNATIONAL<br>RECTIFIER IRFPE30<br>LOGO 135H<br>56 57<br>= DATE CODE<br>ASSEMBLY YEAR 1 = 2001<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br> TO-247AC package is not recommended for Surface Mount Application. **==> picture [461 x 105] intentionally omitted <==** **----- Start of picture text -----**<br> EXAMPLE: THIS IS AN IRGP30B120KD-E<br>WITH ASSEMBLY PART NUMBER<br>LOT CODE 5657 INTERNATIONAL DO €<br>ASSEMBLED ON WW 35, 2000 RECTIFIER<br>LOGO | IRGP30B1 20KD 035H -E |<br>IN THE ASSEMBLY LINE "H"<br>| IR 56 57<br>DATE CODE<br>ASSEMBLY YEAR 0 = 2000<br>Note: "P" in assembly line position<br>LOT CODE WEEK 35<br>indicates "Lead-Free"<br>LINE H<br>**----- End of picture text -----**<br> TO-247AD package is not recommended for Surface Mount Application. ## **Qualification Information[†]** |**Qualification Informationualification Information[†]**||| |---|---|---| |**Qualification Level**|Industrial<br>(per International Rectifier’s internal guidelines)|| |**Moisture Sensitivity Level**|TO-247AC|N/A| ||TO-247AD|N/A| |**RoHS Compliant**|Yes|| † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Highest passing voltage. ## **Revision History** |**Revision Historyy**|||| |---|---|---|---| |**Date**|||**Comments**| |11/17/2014|•Added note|Added note<br>®|IFMDiode Maximum Forward Current on page 1.| ||•Added note|Added note|switchinglosses test condition onpage 2.| **IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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