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IRG4PC40WPBF
IGBT, 40 A, 2.5 V, 160 W, 600 V, TO-247AC, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 160W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247AC
- Operating Temperature Max: 150°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 2.5V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.98 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
PD -95183
## IRG4PC40WPbF
## INSULATED GATE BIPOLAR TRANSISTOR
## **Features**
- Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
- Industry-benchmark switching losses improve efficiency of all power supply topologies
- 50% reduction of Eoff parameter
- Low IGBT conduction losses
- Latest-generation IGBT design and constructionoffers tighter parameters distribution, exceptional reliability • Lead-Free
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C<br>VCES = 600V<br>G VCE(on) typ. = 2.05V<br>E @VGE = 15V, IC = 20A<br>n-channel<br>**----- End of picture text -----**<br>
## **Benefits**
- Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz
- ("hard switched" mode)
- Of particular benefit to single-ended converters and boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) TO-247AC **Absolute Maximum Ratings** ~~a~~ **Parameter Max. Units** VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C ~~a~~ Continuous Collector Current 40 IC @ TC = 100°C Continuous Collector Current 20 A CO ICM Pulsed Collector Current 160 ILM ———_———— Clamped Inductive Load Current 160 ae VGE Gate-to-Emitter Voltage ± 20 V EARV © Reverse Voltage Avalanche Energy 160 mJ ~~==~~ PD @ TC = 25°C Maximum Power Dissipation 160 W PD @ TC = 100°C Maximum Power Dissipation 65 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) ~~aSS[ee]~~ Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) **Thermal Resistance Parameter Typ. Max. Units** R θ JC Junction-to-Case ––– 0.77 R θ CS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W R θ JA Junction-to-Ambient, typical socket mount ––– 40 Wt Weight 6 (0.21) ––– g (oz) www.irf.com 1 04/23/04
## IRG4PC40WPbF
## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
|**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>V(BR)CES<br>Collector-to-Emitter Breakdown Voltage<br>600<br>—<br>—<br>V<br>VGE= 0V, IC= 250µA<br>V(BR)ECS<br>Emitter-to-Collector Breakdown Voltage<br>18<br>—<br>—<br>V<br>VGE= 0V, IC= 1.0A<br>∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage<br>—<br>0.44<br>—<br>V/°C<br>VGE= 0V, IC= 1.0mA<br>—<br>2.05<br>2.5<br>IC= 20A VGE= 15V<br>VCE(ON)<br>Collector-to-Emitter Saturation Voltage<br>—<br>2.36<br>—<br>IC= 40A<br>See Fig.2, 5<br>—<br>1.90<br>—<br>IC= 20A , TJ= 150°C<br>VGE(th)<br>Gate Threshold Voltage<br>3.0<br>—<br>6.0<br>VCE= VGE, IC= 250µA<br>∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage<br>—<br>13<br>—<br>mV/°C<br>VCE= VGE, IC= 250µA<br>gfe<br>Forward Transconductance<br>18<br>28<br>—<br>S<br>VCE =100 V, IC=20A<br>—<br>—<br>250<br>VGE= 0V, VCE= 600V<br>—<br>—<br>2.0<br>VGE= 0V, VCE= 10V, TJ= 25°C<br>—<br>—<br>2500<br>VGE= 0V, VCE= 600V, TJ= 150°C<br>ICES<br>Zero Gate Voltage Collector Current<br>V<br>µA<br>es<br>es<br>Snnee<br>a<br>Rs<br>Gn<br>Q<br>|<br>||<br>|tT<br>~~| |~~<br>~~|~~<br>~~|~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~|~~——<br>ft|
|---|
|IGES<br>Gate-to-Emitter Leakage Current<br>—<br>—<br>±100<br>nA<br>VGE= ±20V<br>~~es~~|
|**Switching Characteristics @ TJ = 25°C (unless otherwise specified)**|
|**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>Qg<br>Total Gate Charge (turn-on)<br>—<br>98<br>147<br>IC= 20A<br>Qge<br>Gate - Emitter Charge (turn-on)<br>—<br>12<br>18<br>nC<br>VCC= 400V<br>See Fig.8<br>Qgc<br>Gate - Collector Charge(turn-on)<br>—<br>36<br>54<br>VGE= 15V<br>td(on)<br>Turn-On Delay Time<br>—<br>27<br>—<br>tr<br>Rise Time<br>—<br>22<br>—<br>TJ= 25°C<br>td(off)<br>Turn-Off Delay Time<br>—<br>100<br>150<br>IC= 20A, VCC= 480V<br>tf<br>Fall Time<br>—<br>74<br>110<br>VGE= 15V, RG= 10Ω<br>Eon<br>Turn-On Switching Loss<br>—<br>0.11<br>—<br>Energy losses include "tail"<br>Eoff<br>Turn-Off Switching Loss<br>—<br>0.23<br>—<br>mJ<br>See Fig. 9,10, 14<br>Ets<br>Total Switching Loss<br>—<br>0.34<br>0.45<br>td(on)<br>Turn-On Delay Time<br>—<br>25<br>—<br>TJ= 150°C,<br>tr<br>Rise Time<br>—<br>23<br>—<br>IC= 20A, VCC= 480V<br>td(off)<br>Turn-Off Delay Time<br>—<br>170<br>—<br>VGE= 15V, RG= 10Ω<br>tf<br>Fall Time<br>—<br>124<br>—<br>Energy losses include "tail"<br>Ets<br>Total Switching Loss<br>—<br>0.85<br>—<br>mJ<br>See Fig.10,11, 14<br>LE<br>Internal Emitter Inductance<br>—<br>13<br>—<br>nH<br>Measured 5mm from package<br>ns<br>ns<br>aee<br>ee<br>Re<br>a<br>~~ee~~<br>~~a~~<br>Re<br>a<br>esee<br>Rees<br>ee<br>Reff<br>ee<br>ee<br>Re<br>eess|
|Cies<br>Input Capacitance<br>—<br>1900<br>—<br>VGE= 0V<br>Coes<br>Output Capacitance<br>—<br>140<br>—<br>pF<br>VCC= 30V<br>See Fig. 7<br>Cres<br>Reverse Transfer Capacitance<br>—<br>35<br>—<br>ƒ = 1.0MHz<br>Re<br>Re|
**Notes:**
Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10 Ω , (See fig. 13a)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum junction temperature.
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## IRG4PC40WPbF
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50<br>For b oth: Trian gu lar w a ve :<br>D uty cycle : 50%<br>T = 12 5°CJ<br>40 T = 90°Cs ink<br>G at e drive as specified<br>Po w er D iss ip ation = 2 8 W C la m p vo lta g e:<br>80 % o f rate d<br>30 TM K all ST<br>S qu are wave:<br>60 % of rated<br>20 po vo lta g e Noun \<br>AE LTA NUTT LETTE<br>eh NY<br>10<br>Ideal diodes<br>es EPS SST<br>0 a ie A<br>0.1 1 10 100 1000<br>f, Frequency (kHz)<br>Fig. 1 - Typical Load Current vs. Frequency<br> (Load Current = IRMS of fundamental)<br> 1000 1000<br>a ee ee ee ee ee ee eee Ee ee ee ee es ee<br>T = 25 CJ °<br>ao ee es ee ee<br> 100 te e 100<br>| L ° T<br>T = 150 CJ ° T = 150 CJ<br>LA<br>| O L<br>|| wl |] | | | | | O YYyY| |R| | |<br> 10 A t 10 T = 25 CJ °<br>| L i<br>V = 15VGE V = 50VCC<br>80µs PULSE WIDTH 5µs PULSE WIDTH<br> 1 e e 1 es ee<br>1.0 2.0 3.0 4.0 5.0 5 7 9 11<br>V , Collector-to-Emitter Voltage (V)CE V , Gate-to-Emitter Voltage (V)GE<br>Load Current ( A )<br>I , Collector-to-Emitter Current (A)C I , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br>
**Fig. 2** - Typical Output Characteristics
**Fig. 3** - Typical Transfer Characteristics
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## IRG4PC40WPbF
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50 3.0<br>V = 15VGE<br>80 us PULSE WIDTH<br>pitt tt tt ty FE T<br>40 I = AC 40<br>titi ti | 2.5 PEE EET EE Cb<br>SSCCEL ELL fet e te<br>30<br>PEE ee e<br>TREE I = AC tT 20<br>2.0<br>20 ptt Sae ed I = AC 10<br>itiCe|ttNEINE 1.5 TPTPEL E ilRRA<br>10 TELLINGee a cee OO OTA VA OG OETA OO OU<br>0 PT EEE PET in 1.0 PEE EEE EEEEE<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T , Case Temperature ( C)C ° T , Junction Temperature ( C)J °<br>Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage<br>Temperature vs. Junction Temperature<br> 1 ee<br>SS<br>D = 0.50<br>ee rete een ns ee So Ll<br>eS Ce eee<br>| 0<br>0.20 SneeeAll<br>0.1 - 0.10 a a a<br>aS 0.05 — an eee ne PDM t 1<br>0.02 SINGLE PULSE t 2<br>o 0.01 e demeeneeel|| (THERMAL RESPONSE) edi en Notes:<br>1. Duty factor D = t / t1 2<br>0.01 Fdill a t A 1lMTll 2. Peak TJ = PDM x Z thJC + TC<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current(A) CE<br>V , Collector-to-Emitter Voltage(V)<br>thJC<br>Thermal Response (Z )<br>**----- End of picture text -----**<br>
**Fig. 6** - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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## IRG4PC40WPbF
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4000<br>VGE = 0V, f = 1MHz<br>Cies = Cge + Cgc , C SHORTEDce<br>Cres = Cgc<br>CT Coes = Cce + Cgc<br>3000 Kol<br>So Cies a e<br>2000<br>Ni LETST<br>O EE Coes anil<br>1000<br>D N Cres<br>0, P TS OCllK<br>0<br> 1 TTS 10 UT] 100<br>V , Collector-to-Emitter Voltage (V)CE<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>
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20<br>VCC = 400V<br>I C = 20A<br>C ae<br>16<br>SPP<br>EC E<br>PE<br>12 PTT<br>8<br>pp oe<br>aun —<br>4<br>7<br>0<br>0 prt 20 iti 40 60 yi y 80 t 100<br>Q , Total Gate Charge (nC)G<br>GE<br>V , Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>
**Fig. 7 -** Typical Capacitance vs. Collector-to-Emitter Voltage
**Fig. 8** - Typical Gate Charge vs. Gate-to-Emitter Voltage
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1.0 10<br>V = 480VCC R = 10OhmG 10 Ω<br>0.9 V = 15VT = 25 CJGE ° V = 15VV = 480VGECC<br>I = 20AC<br>PE EP<br>0.8 Wie sseeee BBBeeeeee<br>I = AC 40<br>0.7 P E ee e<br>i 0 a 1 eT I = A TT C 20<br>0.6<br>4 PtytPtPTyt| I = AC 10 |<br>0.5<br>HOLE TT be<br>0.4<br>PA e d<br>ee Aer<br>0.3 0.1<br>10 20 30 40 50 60 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>R , Gate Resistance (Ohm)G (Ω) T , Junction Temperature ( C )J °<br>Total Switching Losses (mJ) Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>
**Fig. 9** - Typical Switching Losses vs. Gate Resistance www.irf.com
**Fig. 10** - Typical Switching Losses vs. Junction Temperature
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## IRG4PC40WPbF
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2.0 1000<br>R = 10OhmG 10 Ω V = 20VGE<br>T = 150 CJ ° T = 125 CJ o<br>V = 480VCC<br>V = 15VGE<br>1.5<br>e e eeeh|<br>Ean ee<br>1.0 4een 100 acti<br>P| TY | SeriA A<br>Ep 4nnnen PEee eeestll eeeEH<br>0.5<br>L ||i<br>Pf] | df pod. ea) ee eee<br>SAFE OPERATING AREA<br>0.0 PPE 10 ay ell<br>5 15 25 35 45 1 10 100 1000<br>I , Collector-to-emitter Current (A)C V , Collector-to-Emitter Voltage (V)CE<br>Total Switching Losses (mJ)<br>C<br>I , Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>
**Fig. 11 -** Typical Switching Losses vs. Collector-to-Emitter Current
**Fig. 12** - Turn-Off SOA
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## IRG4PC40WPbF
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L D.U.T.<br>50V V *C 0 - 480V RL = 4 X I480VC@25°C<br>1000V 480µF<br>960V<br>* Driver same type as D.U.T.; Vc = 80% of Vce(max) ®@ tt<br>* Note: Due to the 50V pow er supply, pulse width and inductor<br> w ill increase to obtain rated Id.<br>Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector<br>Load Test Circuit Current Test Circuit<br>I C<br>L<br>D river* D.U.T. Fig. 14a - Switching Loss<br>ee TO VC — Test Circuit<br>50V<br>1000V<br>* Driver same type<br> as D.U.T., VC = 480V<br>i ;<br>90%<br>10%<br>VC<br>90% t d(o ff) Fig. 14b - Switching Loss<br>Waveforms<br>I C 5% 10%<br>t r t f<br>t d (o n) t=5µs<br>- : E o n a E o ff<br>E = (E +E )ts o n off<br>**----- End of picture text -----**<br>
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## IRG4PC40WPbF
## TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
## TO-247AC Part Marking Information
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EXAMPLE: T HIS IS AN IRFPE30<br>WITH ASSEMBLY PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30<br>LOGO 035H<br>IN THE ASSEMBLY LINE "H"<br>56 57<br>Note: "P" in assembly line a DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 0 = 2000<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>
Data and specifications subject to change without notice.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/04
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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