IRFI4212H-117PXKMA1
Dual MOSFET, N Channel, 100 V, 100 V, 11 A, 11 A, 0.0725 ohm
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 5Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: TO-220FP
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 18W
- Power Dissipation P Channel: 18W
- Drain Source Voltage Vds N Channel: 100V
- Drain Source Voltage Vds P Channel: 100V
- Continuous Drain Current Id N Channel: 11A
- Continuous Drain Current Id P Channel: 11A
- Drain Source On State Resistance N Channel: 0.0725ohm
- Drain Source On State Resistance P Channel: 0.0725ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.593 € |
| Current stock | 500+ |
| Lead time | 30 days |
## IRFI4212H-117P ## **Features** Integrated half-bridge package Reduces the part count by half Facilitates better PCB layout Key parameters optimized for Class-D audio amplifier applications Low RDS(ON) for improved efficiency Low Qg and Qsw for better THD and improved efficiency Low Qrr for better THD and lower EMI Can delivery up to 150W per channel into 4Ω load in half-bridge configuration amplifier Lead-free package ## **Description** **Key Parameters** VDS 100 V ~~esee~~ RDS(ON) typ. @ 10V 58 m Qg typ. 12 nC ~~**es** eeec es~~ Qsw typ. 6.9 ~~ee~~ nC ~~es~~ RG(int) typ. 3.4 ~~ee~~ Ω TJ max 150 °C ~~esee~~ Oo G1 $102 Gz : S2 TO-220 Full-Pak 5 PIN **G1, G2 D1, D2 S1, S2** Gate Drain Source This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications. ## **Absolute Maximum Ratings** |~~—~~|**Parameter**|**Max.**|**Units**| |---|---|---|---| |VDS<br>~~$$~~|Drain-to-Source Voltage<br>~~a~~|100<br>~~a~~|V<br>~~|~~| |VGS<br>~~$$~~|Gate-to-Source Voltage<br>~~a~~<br>~~a~~|±20<br>~~a~~<br>~~a~~|| |ID@ TC= 25°C<br>~~$$~~<br>~~——~~|Continuous Drain Current, VGS@ 10V|11|A<br>~~|~~<br>~~=~~<br>~~a~~| |ID@ TC= 100°C<br>~~$$~~<br>~~——~~<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~a~~<br>~~a~~|6.8<br>~~a~~<br>~~a~~|| |IDM<br>~~——~~<br>~~a~~|Pulsed Drain Current<br>~~a~~|44<br>~~a~~|| |PD@TC= 25°C<br>~~——~~<br>~~a~~<br>~~a~~<br>~~Ce a~~|Power Dissipation<br>~~a~~|18<br>~~a~~|W<br>~~=~~| |PD@TC= 100°C<br>~~Ce a~~|Power Dissipation|7.0|| |~~Ce a~~|Linear DeratingFactor|0.14|W/°C| |EAS<br>~~en~~|Single Pulse Avalanche Energy<br>~~en~~|41<br>~~en~~|mJ<br>~~en~~| |TJ<br>TSTG<br>~~en~~|Operating Junction and<br>Storage Temperature Range<br>~~en~~|-55 to + 150<br>~~en~~|°C<br>~~en~~| ||Soldering Temperature, for 10 seconds<br>(1.6mm from case)|300|| |~~a~~|Mountingtorque,6-32 or M3 screw|10lb in(1.1N m)|| www.irf.com 1 08/21/06 ## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** |~~Rs~~<br>~~Rs~~|**Parameter**<br>~~Q~~|**Min.**<br>~~Q~~|**Typ.**<br><br>~~GG~~|**Max. **<br>~~(~~<br>~~GG~~|**Units**<br>~~(~~<br>~~GO~~|**Conditions**<br>~~(~~| |---|---|---|---|---|---|---| |BVDSS<br>~~Rs~~<br>~~GG~~<br>~~Rs~~|Drain-to-Source Breakdown Voltage<br>~~Q~~<br>~~GG~~|100<br>~~Q ~~<br>~~GG~~|–––<br> <br>~~GG~~<br>~~GG~~|–––<br> ~~(~~<br>~~GG~~<br>~~GG~~|V<br>~~(~~<br>~~GG~~<br>~~GO~~|VGS= 0V, ID= 250µA<br>~~(~~<br>~~GG~~| |∆ΒVDSS/∆TJ<br>~~Rs~~|Breakdown Voltage Temp. Coefficient<br>~~eG~~|–––<br>~~eG~~|0.09<br>~~GG~~<br>~~eG~~<br>~~GO~~|–––<br>~~GG~~<br>~~GO~~<br>~~GO~~|V/°C<br>~~GO~~<br>~~GO~~<br>~~GG~~|Reference to 25°C, ID= 1mA<br>~~QO~~<br>~~GG~~| |RDS(on)<br>~~Rs~~<br>~~GG~~<br>~~**e**~~|Static Drain-to-Source On-Resistance<br>~~eG~~<br>~~GG~~<br>~~**e**ee~~|–––<br>~~eG~~<br>~~GG~~<br>~~ee~~|58<br>~~GG~~<br>~~eG ~~<br>~~GG~~<br>~~GO~~<br>~~ee~~|72.5<br>~~GG ~~<br> ~~GO~~<br>~~GG~~<br>~~GO~~<br>~~ee~~|mΩ<br> ~~GO~~<br>~~GO ~~<br>~~GG~~<br>~~GG~~<br>~~ee~~|VGS= 10V, ID= 6.6A<br> ~~QO~~<br>~~GG~~<br>~~GG~~<br>~~ee~~| |VGS(th)<br>~~**e**~~<br>~~a~~|Gate Threshold Voltage<br>~~**e**ee~~<br>|3.0<br>~~ee~~<br>~~GG~~<br>|–––<br>~~GO~~<br>~~ee~~<br>~~GG~~<br>|5.0<br>~~GO ~~<br>~~ee~~<br>|V<br> ~~GG~~<br>~~ee~~<br>|VDS= VGS, ID= 250µA<br>~~GG~~<br>~~ee~~<br><br>~~ee~~| |∆VGS(th)/∆TJ<br>~~**e**~~<br>~~a~~|Gate Threshold Voltage Coefficient<br>~~**e**ee~~<br>~~C~~<br>|–––<br>~~ee~~<br>~~C~~<br>~~GG~~<br><br>~~ee ee~~|-11<br>~~ee~~<br>~~C~~<br>~~GG~~<br><br>~~ee~~|–––<br>~~ee~~<br>~~C~~<br><br>~~ee~~|mV/°C<br>~~ee~~<br>~~C~~<br><br>~~ee~~|| |IDSS<br>~~**e**~~<br>~~a ee~~|Drain-to-Source Leakage Current<br>~~**e**ee~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~GG~~<br>~~ee~~<br>~~ee ee~~|–––<br>~~ee~~<br>~~GG~~<br>~~ee~~<br>~~ee~~|20<br>~~ee~~<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDS= 100V, VGS= 0V<br>~~ee~~<br>~~ee~~<br>~~ee~~| |||–––<br>~~GG~~<br>~~ee~~<br>~~ee ee~~<br>~~a~~<br>|–––<br>~~GG~~<br>~~ee~~<br>~~ee~~|250<br>~~ee~~<br>~~ee~~||VDS= 100V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~ee~~<br>~~po~~<br>~~|~~| |IGSS<br>~~SO~~<br>~~a~~|Gate-to-Source Forward Leakage<br>~~SO~~<br>~~es~~|–––<br>~~ee ee~~<br>~~SO~~<br>|–––<br>~~ee~~<br>~~SO~~|200<br>~~ee~~<br>~~SO~~|nA<br>~~ee ~~<br>~~SO~~<br><br>~~GOO~~|VGS= 20V<br> ~~ee~~<br>~~SO~~<br>~~|~~| ||Gate-to-Source Reverse Leakage<br>~~SO~~<br>~~es~~<br>|–––<br>~~SO~~<br>~~es~~<br>|–––<br>~~SO~~<br><br>~~GOO~~|-200<br>~~SO~~<br><br>~~GOO~~||VGS= -20V<br>~~SO~~<br>~~|~~<br>~~po~~<br>| |gfs<br>~~a~~|Forward Transconductance<br>~~es ~~<br>~~es~~|11<br> ~~es~~<br>~~es~~|–––<br>~~es~~<br>~~GOO~~|–––<br>~~es~~<br>~~GOO~~|S<br>~~es~~<br>~~GOO~~|VDS= 50V, ID= 6.6A<br>~~|~~<br>~~po~~<br>~~es~~| |Qg<br>~~a ~~<br>~~Rn~~<br>~~ee~~|Total Gate Charge<br> <br> ~~es~~<br>~~Rn~~<br>~~ee~~|–––<br> ~~es~~<br>~~es~~<br>~~Rn~~<br>~~ee~~|12<br>~~es~~<br>~~GOO~~<br>~~Rn~~<br>~~ee~~|18<br>~~es~~<br>~~GOO~~<br>~~Rn~~<br>~~ee~~|nC<br>~~es~~<br>~~GOO~~<br>~~GG~~<br>~~GG~~|See Fig. 6 and 15<br>VGS= 10V<br>ID= 6.6A<br>VDS= 80V<br>~~po~~<br>~~es~~<br>~~GG~~| |Qgs1<br>~~ee~~|Pre-Vth Gate-to-Source Charge<br>~~ee~~|–––<br>~~ee~~|1.6<br>~~ee~~|–––<br>~~ee~~||| |Qgs2<br>~~ee~~<br>~~eG~~<br>~~ee~~|Post-Vth Gate-to-Source Charge<br>~~ee~~<br>~~eG~~<br>~~ee~~|–––<br>~~ee~~<br>~~eG~~<br>~~ee~~|0.71<br>~~ee~~<br>~~eG~~<br>~~ee~~|–––<br>~~ee~~<br>~~eG~~<br>~~ee~~||| |Qgd<br>~~ee~~|Gate-to-Drain Charge<br>~~ee~~|–––<br>~~ee~~|6.2<br>~~ee~~|–––<br>~~ee~~||| |Qgodr<br>~~ee~~<br>~~eG~~|Gate Charge Overdrive<br>~~ee~~<br>~~eG~~|–––<br>~~ee~~<br>~~eG~~|3.5<br>~~ee~~<br>~~eG~~|–––<br>~~ee~~<br>~~eG~~||| |Qsw<br>~~a~~<br>~~RR~~<br>~~ee~~|Switch Charge (Qgs2+ Qgd)<br>~~GG~~<br>|–––<br>~~GG~~|6.9<br>~~GG~~<br>~~GO~~|–––<br>~~GG~~<br>~~GG~~||| |RG(int)<br>~~a~~<br>~~RR~~<br>~~ee ee~~|Internal Gate Resistance<br>~~GG~~<br>~~ee~~|–––<br>~~GG~~|3.4<br>~~GG~~<br>~~GO~~|–––<br>~~GG~~<br>~~GG~~|Ω<br>~~GG~~<br>~~GG~~|~~GG~~<br>®| |td(on)<br>~~RR ~~<br>~~ee ee~~|Turn-On DelayTime<br> ~~GG~~<br>~~ee~~|–––<br>~~GG~~|4.7<br>~~GG~~<br>~~GO~~|–––<br>~~GG~~<br>~~GG~~|ns<br>~~GG~~<br>~~GG~~|RG= 2.5Ω<br>VDD= 50V, VGS= 10V<br>ID= 6.6A<br>~~GG~~<br>®| |tr<br>~~ee ee~~<br>~~eG~~<br>~~ee~~|Rise Time<br>~~ee~~<br>~~eG~~<br>~~ee~~|–––<br>~~eG~~<br>~~ee~~|8.3<br>~~GO ~~<br>~~eG~~<br>~~ee~~|–––<br> ~~GG~~<br>~~eG~~<br>~~ee~~||| |td(off)<br>~~ee~~|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~|9.5<br>~~ee~~|–––<br>~~ee~~||| |tf<br>~~ee~~<br>~~eG~~<br>~~ee~~|Fall Time<br>~~ee~~<br>~~eG~~<br>~~ee~~|–––<br>~~ee~~<br>~~eG~~<br>~~ee~~|4.3<br>~~ee~~<br>~~eG~~<br>~~ee~~|–––<br>~~ee~~<br>~~eG~~<br>~~ee~~||| |Ciss<br>~~ee~~|Input Capacitance<br>~~ee~~|–––<br>~~ee~~|490<br>~~ee~~|–––<br>~~ee~~|pF|VGS= 0V<br>VDS= 50V<br>ƒ= 1.0MHz, See Fig.5<br>~~Po~~| |Coss<br>~~ee~~<br>~~eG~~<br>~~ee~~|Output Capacitance<br>~~ee~~<br>~~eG~~<br>~~ee~~|–––<br>~~ee~~<br>~~eG~~<br>~~ee~~|64<br>~~ee~~<br>~~eG~~<br>~~ee~~|–––<br>~~ee~~<br>~~eG~~<br>~~ee~~||| |Crss<br>~~ee~~<br>~~eG~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~eG~~|–––<br>~~ee~~|34<br>~~ee~~|–––<br>~~ee~~||| |Cosseff.<br>~~ee~~<br>~~eG~~|Effective Output Capacitance<br>~~ee~~<br>~~eG~~|–––<br>~~ee~~|110<br>~~ee~~|–––<br>~~ee~~||VGS= 0V, VDS= 0V to 80V<br>~~Po~~| |LD<br>~~eG~~<br>~~eH~~|Internal Drain Inductance<br>~~eG~~<br>~~eH~~|–––<br>~~eH~~|4.5<br>~~eH~~|–––<br>~~eH~~|nH<br>~~|~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~Po~~| |LS<br>~~eH~~|Internal Source Inductance<br>~~eH~~|–––<br>~~eH~~|7.5<br>~~eH~~|–––<br>~~eH~~||| Repetitive rating; pulse width limited by max. junction temperature. > Starting TJ = 25°C, L = 1.9mH, RG = 25Ω, IAS = 6.6A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rθ is measured at Ty of approximately > Specifications refer to single MosFET. www.irf.com 2 **==> picture [211 x 433] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>VGS oa<br>TOP 15V<br>12V<br>10V<br>9.0V<br>8.0V Bee<br>7.0V y Zan<br>BOTTOM 6.0V<br>Arai i<br>10<br>6.0V<br>rt<br>≤60µs PULSE WIDTH<br>Tj = 25°C<br>1 |T ut<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1. Typical Output Characteristics<br>100<br>10 aP ht dA)a oe<br>a 4A<br>TJ = 150°C<br>ae aoe<br>TJ = 25°C<br>1<br>Wit )<br>a ss re or<br>ea VDS = 50V<br>≤60µs PULSE WIDTH<br>0.1 f/f<br>3 4 5 6 7 8 9<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig 3.** Typical Transfer Characteristics **==> picture [204 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>VGS Seeeieseit<br>TOP 15V<br>12V<br>10V<br>9.0V<br>8.0V ater<br>7.0V fr |<br>BOTTOM 6.0V<br>A 6.0V i<br>10<br>Sere comet eemrtiil<br>≤60µs PULSE WIDTH<br>Tj = 150°C<br>1 aA<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br> **Fig 2.** Typical Output Characteristics **==> picture [222 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>ID = 6.6A<br>VGS = 10V<br>2.0<br>OL [L] [E]<br>t t<br>1.5<br>L EE<br>e r<br>1.0 LH<br>BoP Gnnnnen<br>0.5 ATLL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance (Normalized)<br>**----- End of picture text -----**<br> **Fig 4.** Normalized On-Resistance vs. Temperature **==> picture [280 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>VGS = 0V, f = 1 MHZ<br>Ciss = C gs + Cgd, C ds SHORTED<br>Crss = Cgd<br>i Coss = Cds + Cgd<br>1000<br>Ciss<br>eeP|ee eeeed<br>Coss<br>100<br>eee Crss PP LTH<br>10<br>P U TT =<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br> **==> picture [212 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 12.0<br>ID= 6.6A<br>10.0 VDS= 80V<br>VDS= 50V ane<br>VDS= 20V<br>8.0<br>C<br>6.0<br>VA,<br>4.0<br>2.0<br> AEE 0.0<br>0 2 4 6 8 10 12 14<br> QG, Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br> **Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage **Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage www.irf.com 3 **==> picture [214 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>TJ = 150°CJ = 150°C= 150°C<br>10<br>Pf fF TJ = 25°CJ = 25°C= 25°C<br>1<br>VGS = 0VGS = 0V= 0V<br>0.1<br>fp<br>0.0 0.5 1.0 1.5<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br> **==> picture [453 x 670] intentionally omitted <==** **----- Start of picture text -----**<br> 100 1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>100<br>TJ = 150°CJ = 150°C= 150°C<br>10 10<br>100µsec<br>1<br>Pf fF TJ = 25°CJ = 25°C= 25°C Pe<br>1 0.1 1msec<br>10msec<br>0.01 T c = 25°C<br>Tj = 150°C<br>VGS = 0VGS = 0V= 0V Single Pulse DC<br>0.1 0.001<br>fp Si Mat<br>0.0 0.5 1.0 1.5 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br> Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area<br>12 4.5<br>10 4.0<br>| | |] P AL TELE EL<br>8 3.5<br>P SE} E S<br>ID = 250µA<br>6 w e 3.0 NE L<br>4 2.5<br>T N G ENE<br>2 2.0<br>P t tT | A B ERREEEEN<br>0 ptt | | dA 1.5 TUTE EEL<br>25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150<br> TJ , Junction Temperature (°C) TJ , Temperature ( °C )<br>Maximum Drain Current vs. Junction Temperature Fig 10. Threshold Voltage vs. Temperature<br>10<br>D = 0.50<br>Leo<br>0.20<br>1 0.10<br>C icerUT I<br>0.05<br>0.1 0.010.02 τJ τJτ1τ1 R1 R1 τ2τR22 R2 Rτ33 R τ3 3 τR4τ4R4 4 τCτ Ri (°C/W) 0.7942 0.0002081.3536 0.0014342.2345 0.100647 τi (sec)<br>| SINGLE PULSE Ci= Ciτi/Rii/Ri 2.7177 1.9398<br>0.01<br>( THERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 4 4 ) 1E-005 B f 0.0001 a v BEA 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>ID, Drain-to-Source Current (A)<br>VGS(th), Gate Threshold Voltage (V)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br> **Fig 7.** Typical Source-Drain Diode Forward Voltage **==> picture [211 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 12<br>10<br>| | |]<br>8<br>P SE}<br>6 w e<br>4<br>T N<br>2<br>P t tT | A<br>0<br>ptt | | dA<br>25 50 75 100 125 150<br> TJ , Junction Temperature (°C)<br>ID, Drain Current (A)<br>**----- End of picture text -----**<br> **Fig 9.** Maximum Drain Current vs. Junction Temperature **Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 4 **==> picture [205 x 207] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>ID = 6.6A<br>175 TELE<br>150<br>ALLELE<br>TJ = 125°C<br>125<br>HH tt<br>100<br>UL PCreHH<br>75 T J = 25°C<br>ANGE<br>50 ELLER HH<br>4 5 6 7 8 9 10 11 12 13 14 15 16<br>VGS, Gate -to -Source Voltage (V)<br>) Ω<br>RDS(on), Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br> **Fig 12.** On-Resistance vs. Gate Voltage **==> picture [147 x 98] intentionally omitted <==** **----- Start of picture text -----**<br> 15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20VVGS<br>tp 0.01Ω<br>**----- End of picture text -----**<br> **Fig 13b.** Unclamped Inductive Test Circuit **==> picture [186 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> LD<br>VDS<br>+<br>VDD -<br>D.U.T<br>VGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>Fig 14a. Switching Time Test Circuit<br>L<br>VCC<br>DUT<br>0<br>1K<br>a:<br>**----- End of picture text -----**<br> **Fig 14a.** Switching Time Test Circuit **Fig 15a.** Gate Charge Test Circuit **==> picture [209 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 175<br>ID<br>150 T TL TOP 1.2A<br>2.1A<br>125 BOTTOM 6.6A<br>\ o<br>100<br>75 G aN<br>S ENT TT<br>50<br>25<br>S OS<br>| EC PS™S<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br> **Fig 13a.** Maximum Avalanche Energy vs. Drain Current **==> picture [172 x 257] intentionally omitted <==** **----- Start of picture text -----**<br> V(BR)DSS<br>tp<br>IAS<br>Fig 13c. Unclamped Inductive Waveforms<br>V<br>DS<br>90%<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br> **Fig 13c.** Unclamped Inductive Waveforms **Fig 14b.** Switching Time Waveforms **==> picture [162 x 131] intentionally omitted <==** **----- Start of picture text -----**<br> Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br> **Fig 15b** Gate Charge Waveform www.irf.com 5 TO-220 Full-Pak 5-Pin Package Outline, Lead-Form Option 117 (Dimensions are shown in millimeters (inches)) ## TO-220 Full-Pak 5-Pin Part Marking Information Data and specifications subject to change without notice. This product has been designed for the Consumer market. Qualification Standards can be found on IR’s Web site. **IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 08/06 www.irf.com 6 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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