IRF7341TRPBF
Dual MOSFET, N Channel, 55 V, 55 V, 4.7 A, 4.7 A, 0.043 ohm
- Manufacturer: INFINEON
- Product type: Dual MOSFETs
- Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4.7A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg
- MSL: -
- SVHC: No SVHC (17-Jan-2023)
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Drain Source Voltage Vds N Channel: 55V
- Drain Source Voltage Vds P Channel: 55V
- Continuous Drain Current Id N Channel: 4.7A
- Continuous Drain Current Id P Channel: 4.7A
- Drain Source On State Resistance N Channel: 0.043ohm
- Drain Source On State Resistance P Channel: 0.043ohm
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.555 € |
| Current stock | 50+ |
| Lead time | 7 days |
## IRF7341QPbF
## **Typical Applications**
HEXFET[®] Power MOSFET
- Anti-lock Braking Systems (ABS)
- lectronic Fuel Injection
- Air bag
## **Benefits**
- Advanced Process Technology
|**VDSS**<br>**55V**|**RDS(on) max**<br>0.050@VGS= 10V|**ID**<br>5.1A|
|---|---|---|
||0.065@VGS= 4.5V|4.42A|
- ual N-Channel MOSFET
- ltra Low On-Resistance
- 75°C Operating Temperature
- epetitive Avalanche Allowed up to Tjmax
- utomotive [Q101] Qualified
- ead-Free
## **Description**
Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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S1 1 8 D1<br>G1 2 7 D1<br>S2 3 6 D2<br>G2 4 5 D2<br>SO-8<br>Top View<br>**----- End of picture text -----**<br>
The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
## **Absolute Maximum Ratings**
(OT **Parameter Max. Units** ~~ee~~ VDS Drain-Source Voltage 55 V ~~a~~ ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 5.1 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 4.2 A ~~Oo~~ IDM Pulsed Drain Current 42 ~~a~~ PD @TA = 25°C ~~ee~~ Maximum Power Dissipation 2.4 W ~~ee~~ PD @TA = 70°C Maximum Power Dissipation 1.7 W Linear Derating Factor 16 mW/°C ~~>~~ VGS Gate-to-Source Voltage ± 20 ~~=~~ V ~~i~~ EAS Single Pulse Avalanche Energy 140 mJ IAR Avalanche Current 5.1 A ~~oo~~ EAR Repetitive Avalanche Ener ~~Oh~~ gy See Fig. 14, 15, 16 mJ ~~a~~ TJ , TSTG Junction and Storage Temperature Range -55 to + 175 °C **Thermal Resistance Parameter Max. Units** ~~SE~~ RθJA Maximum Junction-to-Ambient 62.5 °C/W
**Thermal Resistance**
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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**
||**Parameter**<br>rs|**Min. **<br>rs<br>~~rd~~<br>~~Ors~~|**Typ. **<br>rs<br>~~de~~<br>~~GG~~|**Max.**<br>rs<br>~~de~~<br>~~GG~~|**Units**<br>rs<br>~~GG~~|**Conditions**<br>rs|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~Bo~~|Drain-to-Source Breakdown Voltage<br>~~rs~~<br>~~Bo~~|55<br>~~rd ~~<br>~~rs~~<br>~~Ors~~<br>rs|–––<br> ~~de~~<br>~~rs~~<br>~~GG~~<br>rs|–––<br>~~de~~<br>~~rs~~<br>~~GG~~<br>es|V<br>~~rs~~<br>~~GG~~|VGS= 0V, ID= 250µA<br>~~rs~~|
|∆V(BR)DSS/∆TJ<br>~~Bo~~|Breakdown Voltage Temp. Coefficient<br>~~rs~~<br>~~Bo~~|––– <br>~~Ors~~<br>~~rs~~<br>rs<br>~~REY~~|0.052<br>~~GG~~<br>~~rs~~<br>rs<br>~~REY~~|–––<br>~~GG~~<br>~~rs~~<br>es<br>~~REY~~|V/°C<br>~~GG~~<br>~~rs~~|Reference to 25°C, ID= 1mA<br>~~rs~~<br>RHR<br>—2,~~—~~|
|RDS(on)<br>~~Bo~~|Static Drain-to-Source On-Resistance<br>~~Bo~~|––– <br>rs<br>~~REY~~|0.043 <br>rs<br>~~REY~~<br>||0.050<br>es<br>~~REY~~<br>|||Ω<br>|<br>~~ss~~|VGS= 10V, ID= 5.1A<br>RHR<br>—2,~~—~~|
|||rs<br>~~REY~~<br>I—|<br>~~Gs~~|0.056 <br>rs<br>~~REY~~<br>I—|<br>|<br>~~rr~~|0.065<br>es<br>~~REY~~<br>I—|<br>||<br>~~ss~~||VGS= 4.5V, ID= 4.42A<br>RHR<br>—2,~~—~~|
|VGS(th)<br>~~Bo~~|Gate Threshold Voltage<br>~~Bo~~<br>~~rs~~|1.0<br>rs <br>~~REY~~<br>~~rs~~<br>~~Gs~~<br>~~Gre~~|–––<br> rs <br>~~REY~~<br>|<br>~~rs~~<br>~~rr~~<br>~~Gr~~|–––<br> es<br>~~REY~~<br>| |<br>~~rs~~<br>~~ss~~|V<br>|<br>~~rs~~<br>~~ss~~|VDS= VGS, ID= 250µA<br>RHR<br>—2,~~—~~<br>~~rs~~|
|gfs|Forward Transconductance<br>~~rs~~<br>~~tk~~|10.4<br>~~Gs ~~<br>~~rs~~<br>~~Gre~~<br>~~tk~~|–––<br> ~~rr ~~<br>~~rs~~<br>~~Gr~~<br>~~tk~~|–––<br> ~~ss~~<br>~~rs~~<br>~~tk~~|S<br>~~ss~~<br>~~rs~~<br>~~tk~~|VDS= 10V, ID= 5.2A<br>~~rs~~|
|IDSS|Drain-to-Source Leakage Current<br>~~tk~~<br>~~ee~~|–––<br>~~Gre ~~<br>~~tk~~|–––<br> ~~Gr~~<br>~~tk~~|2.0<br>~~tk~~|~~tk~~<br>~~a~~<br>~~ot~~|VDS= 44V, VGS= 0V|
|||–––<br>~~tk~~<br>~~a~~<br>|–––<br>~~tk~~<br>~~a~~|25<br>~~tk~~<br>~~a~~||VDS= 44V, VGS= 0V, TJ= 150°C<br>~~a~~<br>~~|~~|
||Gate-to-Source Forward Leakage<br>~~tk~~<br>~~a~~<br>~~ee~~|–––<br>~~tk~~<br>~~a~~<br>~~ee~~|–––<br>~~tk~~<br>~~a~~|100<br>~~tk~~<br>~~a~~|~~tk~~<br>~~ot~~<br>~~PO~~|VGS= 20V<br>~~|~~<br>~~PO~~|
||Gate-to-Source Reverse Leakage<br>~~a~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~|–––<br>~~a~~|-100<br>~~a~~||VGS= -20V<br>~~|~~<br>~~PO~~|
|Qg|Total Gate Charge<br>~~ee ~~<br>~~i~~|–––<br> ~~ee~~<br>~~i~~<br>ee|29<br>~~i~~|44<br>~~i~~|nC<br>~~ot ~~<br>~~PO~~|ID= 5.2A<br>VDS= 44V<br>VGS= 10V<br> ~~|~~<br>~~PO~~|
|Qgs|Gate-to-Source Charge<br>~~i~~<br>~~ee~~|–––<br>~~i~~<br>~~ee~~<br>ee|2.9<br>~~i~~<br>~~ee~~|4.4<br>~~i~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>ee<br>~~ee~~<br>ee|7.3<br>~~ee~~|11<br>~~ee~~|||
|td(on)|Turn-On Delay Time<br>~~es~~|–––<br>~~es~~<br>ee<br>ee|9.2<br>~~es~~|–––||VDD= 28V<br>ID= 1.0A<br>RG= 6.0Ω<br>VGS= 10V<br>~~@~~|
|tr|Rise Time<br>~~ee~~<br>~~ee~~|–––<br>ee<br>~~ee~~<br>ee<br>~~e~~~~**e**~~<br>|7.7<br>~~ee~~|–––|||
|td(off)|Turn-Off Delay Time<br>~~ee~~<br>~~ee~~|–––<br>ee<br>~~ee~~<br>~~e~~~~**e**~~<br>~~e~~|31<br>~~ee~~|–––|||
|tf|Fall Time<br>~~ee~~|–––<br>~~e~~~~**e**~~<br>~~e~~<br>ee|12.5|–––|||
|Ciss|Input Capacitance<br>~~ee ~~<br>~~ee~~|–––<br>~~e~~~~**e**~~<br> ~~e~~<br>~~ee~~<br>ee<br>ee|780<br>~~ee~~|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz<br>~~@~~|
|Coss|Output Capacitance<br>~~ee~~|–––<br>ee<br>~~ee~~<br>ee|190<br>~~ee~~|–––|||
|Crss|Reverse Transfer Capacitance|–––<br>ee|66|–––|||
## **Source-Drain Ratings and Characteristics**
|||~~Gs~~|||||
|---|---|---|---|---|---|---|
|es|**Parameter**<br>es|**Min. **<br>es<br>~~Gs~~|**Typ. **<br>es|**Max.**<br>es|**Units**<br>es|**Conditions**<br>es|
|IS|Continuous Source Current<br>(Body Diode)|~~Gs~~||2.4|~~es~~|MOSFET symbol<br>showing the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G<br>~~es~~|
|ISM<br>~~Rses~~|Pulsed Source Current<br>(BodyDiode)<br>~~es~~|~~es~~|~~es~~|42<br>~~es~~|||
|VSD<br>~~Rses~~<br>~~$$~~|Diode Forward Voltage<br>~~es~~<br>~~$$~~<br>~~ttt~~|–––<br>~~es~~<br>~~ttt~~|–––<br>~~es~~<br>~~ttt~~|1.2<br>~~es~~<br>~~ttt~~|V<br>~~es~~|TJ= 25°C, IS= 2.6A, VGS= 0V<br>~~es~~<br>~~lis~~|
|trr<br>~~Rses~~<br>~~$$~~<br>~~es~~|Reverse Recovery Time<br>~~es~~<br>~~$$~~<br>~~ttt~~<br>~~es~~|–––<br>~~es~~<br>~~ttt~~|51<br>~~es~~<br>~~ttt~~|77<br>~~es~~<br>~~ttt~~|ns<br>~~es~~|TJ= 25°C, IF= 2.6A<br>di/dt = 100A/µs<br>~~es~~<br>~~lis~~<br>@|
|Qrr<br>~~$$~~<br>~~es~~|Reverse Recovery Charge<br>~~$$~~<br>~~ttt~~<br>~~es~~|–––<br>~~ttt~~|76<br>~~ttt~~|114<br>~~ttt~~|nC||
Repetitive rating; pulse width limited by max. junction temperature.
Surface mounted on FR-4 board, ≤ 10sec
Pulse width ≤ 300µs duty cycle ≤
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100 100<br>VGS VGS<br>TOP 15.0V TOP 15.0V<br> 10.0V 10.0V<br> 7.0V 7.0V<br> 5.5V 5.5V<br> 4.5V 4.5V<br> 4.0V 4.0V<br>10 3.5V 10 3.5V<br>BOTTOM 2.7V BOTTOM 2.7V<br>2.7V<br>2.7V<br>FA A PET | MoETT<br>1 7G en ee 1 ” AGU AN<br>4 ee ae eS ee Seer Jose et eee eri<br>20µs PULSE WIDTH 20µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>0.1 SaP| LH are| nHil 0.1 PHlll |nl<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br> 100 2.5<br>ee ID = 5.2A<br>EEEEESESES T = 25 CJJ ° 2.0 THIMETIHETL<br>o44 oaeae PELE EET et<br>A T = 175 CJJ ° 1.5 PELE ee<br> 10<br>a a ee es ee es ee ee ee<br>1.0<br>==ASAS rTEELEPPTTTCELT ELTIIL<br>TTL ELLE EEL<br>0.5<br>4 Ler<br>PALLET<br>V = 25VDSDS<br> 1 PEE E E) 20µs PULSE WIDTH 0.0 PeEEE c VGS EE = 10V<br>2.0 3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V , Gate-to-Source Voltage (V)GS T , Junction TemperatureJ ( C)°<br>(Normalized)<br>D<br>I , Drain-to-Source Current (A)<br>DS(on)<br>R , Drain-to-Source On Resistance<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
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100 ee<br>EEEEESESES °<br>T = 25 CJJ<br>o44 oaeae<br>A T = 175 CJJ °<br> 10<br>a ==ASAS a ee es ee es ee ee ee<br>4<br>V = 25VDSDS<br>E E) 20µs PULSE WIDTH<br> 1 PEE<br>2.0 3.0 4.0 5.0 6.0 7.0<br>V , Gate-to-Source Voltage (V)GS<br>D<br>I , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>
**Fig 3.** Typical Transfer Characteristics
**Fig 4.** Normalized On-Resistance Vs. Temperature
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1400<br>VGS = 0V, f = 1 MHZ<br>C iss = Cgs + Cgd , Cds<br>1200 SHORTED<br>FT]<br>== Crss = Cgd<br>1000 po C oss = C ds + C gd<br>800 Ciss<br>600<br>ESSE EEE HH<br>400<br>Coss<br>200<br>Crss<br>SEE ee Htth<br>0 pf fe tt<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>
## **Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage
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100<br>T = 175 CJ °<br>ee<br> 10 SSS SSS<br>T = 25 CJ °<br> 1 pp YT A<br>V = 0 V GS<br>0.1 | i7/] et |<br>0.2 0.5 0.8 1.1 1.4<br>V ,Source-to-Drain Voltage (V)SD<br>I , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>
**Fig 7.** Typical Source-Drain Diode Forward Voltage
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20<br>ID = 5.2A VDS = 44V<br>VDS = 27V<br>S++ VDS = 11V<br>16<br>PT Nam<br>S e ean<br>12<br>8 SaReY AGREE<br>4 pA tt Et<br>0 Vi | | tt dtd<br>0 10 20 30 40 50<br>Q , Total Gate Charge (nC)G<br>Fig 6. Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br> 1000<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br> 100 = : itt - i<br>10us<br>EASrC ant<br>100us<br> 10<br>1ms<br>ecestileemaiiiiincsett email<br> 1 10ms<br> T TCJ = 25 C= 175 C° °<br> Single Pulse<br>0.1 aan<br>0.1 1 10 100 1000<br>V , Drain-to-Source Voltage (V)DS<br>GS<br>V , Gate-to-Source Voltage (V)<br>I , Drain Current (A) D<br>**----- End of picture text -----**<br>
**Fig 8.** Maximum Safe Operating Area
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6.0 Ft ttt tet tt yy Vos >—— Re<br>5.0 Pi tT TTT tT TTT tT y |<br>PE EE ; y D.U.T. +<br>4.0 PT TN eT GL . - Von<br>Pt tT | ENE EEL LI<br>3.0 Ft tT | ET EAE EL LI }y 10V ≤ 1<br>BREN Pulse Widths ≤ 0.1 %<br>2.0 Ft tt} tEt_ tte tLN | :<br>Pt | tT tt ett TIN Fig 10a. Switching Time Test Circuit<br>1.0 Fit |tite<br>VDS<br>CCECEC ttt A<br>90%<br>0.0 fi Eee -——<br>25 50 75 100 125 150 175<br>T , Case TemperatureC ( C)°<br>ttf? ttt tf fy 10% /\_\\ ON<br>Fig 9. Maximum Drain Current Vs. VGS<br>Case Temperature td(on) tr td(off) tf<br>Fig 10b. Switching Time Waveforms<br> 100<br>a D = 0.50 a<br>0.20<br> 10<br>0.10<br>0.05<br>= Po ee CI<br>0.02<br> 1<br>0.01<br>PDM<br>SINGLE PULSE t1<br>0.1 reer (THERMAL RESPONSE) I t 2<br>Notes:<br>1. Duty factor D = t / t1 2<br>aee 2. Peak T J = P DM x Z thJA + TA<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>t , Rectangular Pulse Duration (sec)1<br>I , Drain Current (A)D<br>thJA<br>(Z )<br>Thermal Response<br>**----- End of picture text -----**<br>
**Fig 10.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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0.070 a 0.100 n e a<br>0.060<br>0.080<br>y e<br>PELE) ee eee ee<br>0.050<br>0.060<br>PEPE) ee<br>0.040<br>VGS = 4.5V<br>ID = 7.1A 0.040<br>0.030<br>PET van e<br>VGS = 10V<br>PSHE} Ee<br>0.020 0.020<br>= (EL<br>2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 0 10 20 30 40 50 60<br>VGS, Gate -to -Source Voltage (V) ID , Drain Current ( A )<br>Fig 11. Typical On-Resistance Vs. Fig 12. Typical On-Resistance Vs.<br>Gate Voltage Drain Current<br>QGG<br>400<br>QGSGS QGDGD I D<br>TOP 2.1A<br>4.3A<br>Gaaeenn<br>VGG 320 Naan BOTTOM 5.1A<br>Fig 13a. Basic Gate Charge WaveformCharge — 240 PAPEEaNSGeneene<br>o Current Regulator e 160 PONE<br>Same Type as D.U.T.<br>50KΩΩ<br>12V .2µFµFF 80<br>The .3µFµFF : NGH SEES<br>—LLit D.U.T. | +-VDS-VDSVDSDS PSS ENE<br>0<br>VGSGS 25 50 75 100 125 150 175<br>°<br>3mA @ P| Starting Tj, Junction Temperature SSA ( C)<br>Onl.| Ee SSS<br>AS<br>E , Single Pulse Avalanche Energy (mJ)<br> )<br>) ΩRDS ( on ) , Drain-to-Source On Resistance (<br>ΩRDS(on), Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>
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QGG<br>QGSGS QGDGD<br>VGG<br>Charge —<br>Fig 13a. Basic Gate Charge WaveformCharge<br>o Current Regulator e<br>Same Type as D.U.T.<br>50KΩΩ<br>12V .2µFµFF<br>The .3µFµFF :<br>—LLit |<br>D.U.T. +-VDS-VDSVDSDS<br>VGSGS<br>@<br>3mA<br>Onl.| IG ID |<br>Current Sampling Resistors<br>Fig 13b. Gate Charge Test Circuit<br>**----- End of picture text -----**<br>
**Fig 14.** Maximum Avalanche Energy Vs. Drain Current
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100<br>Duty Cycle = Single Pulse<br>10<br>Allowed avalanche Current vs<br>avalanche pulsewidth, tav<br>1 0.01 assuming ∆ Tj = 25°C due to<br>avalanche losses<br>0.05<br>0.1 0.10<br>0.01<br>0.001<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02<br>tav (sec)<br>Fig 15. Typical Avalanche Current Vs.Pulsewidth<br>140 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP Single Pulse (For further info, see AN-1005 at www.irf.com)<br>120 BOTTOM 10% Duty Cycle 1. Avalanche failures assumption:<br>ID = 5.1A Purely a thermal phenomenon and failure occurs at a<br>= temperature far in excess of Tjmax. This is validated for<br>100 R NG eee every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>80 P IN EET not exceeded.<br>3. Equation below based on circuit and waveforms shown in<br>PUN EET Figures 12a, 12b.<br>60 4. PD (ave) = Average power dissipation per single<br> avalanche pulse.<br>40 P LETEING EEE 5. BV = Rated breakdown voltage (1.3 factor accounts for<br> voltage increase during avalanche).<br>20 6. Iav = Allowable avalanche current.<br>t it PN 7. ∆T = Allowable rise in junction temperature, not to exceed<br> Tjmax (assumed as 25°C in Figure 15, 16).<br>0 Pope LEAL | tav = Average time in avalanche.<br>25 50 75 100 125 150 175 D = Duty cycle in avalanche = tav ·f<br>Starting TJ , Junction Temperature (°C) ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>
**Fig 16.** Maximum Avalanche Energy Vs. Temperature
**PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth]**
**EAS (AR) = PD (ave)·tav**
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## **SO-8 Package Outline**
Dimensions are shown in millimeters (inches)
## **SO-8 Part Marking**
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## **SO-8 Tape and Reel**
Dimensions are shown in millimeters (inches)
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TERMINAL NUMBER 1<br>e¢oeoo) |<br>12.3 ( .484 )<br>11.7 ( .461 )<br>8.1 ( .318 )<br>7.9 ( .312 ) FEED DIRECTION<br>**----- End of picture text -----**<br>
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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330.00<br>(12.992)<br> MAX.<br>14.40 ( .566 )<br>12.40 ( .488 )<br>mw<br>**----- End of picture text -----**<br>
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice. This product has been designed and qualified for the Autyomotive [Q101] market. Qualification Standards can be found on IR’s Web site.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/2007
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Updated at March 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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