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IKY75N120CS6XKSA1
IGBT, 150 A, 1.85 V, 880 W, 1.2 kV, TO-247, 4 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:880W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pi
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Product Range: TRENCHSTOP IGBT6
- Power Dissipation: 880W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 150A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.43 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IKY75N120CS6
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High speed soft switching TRENCHSTOP TM _ IGBT 6 in Trench and Fieldstop<br>**----- End of picture text -----**<br>
## **Features:**
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**----- Start of picture text -----**<br>
1200V TRENCHSTOP TM _ IGBT6 technology offering:<br>* High efficiency in hard switching and resonant<br>¢ Easy paralleling capability due to positive<br>coefficient in V CEsat<br>« Low EMI<br>g<br>**----- End of picture text -----**<br>
http://www.infineon.com/igbt/
## **Applications:**
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKY75N120CS6|1200V|75A|1.85V|175°C|K75MCS6|PG-TO247-4-2|
Datasheet www.infineon.com
2018-08-07
IKY75N120CS6
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## Sixth�generation,�high�speed�soft�switching�series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Datasheet
IKY75N120CS6
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## Sixth�generation,�high�speed�soft�switching�series
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||1200|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||150.0<br>75.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||300.0|A|
|Turnoffsafeoperatingarea_V_CE≤1200V,_T_vj≤175°C|-||300.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||150.0<br>75.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||300.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤0.5µs,_D_<0.001)|_V_GE||±20<br>25|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||880.0<br>440.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
## **Thermal�Resistance**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.17|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.41|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
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Datasheet
IKY75N120CS6
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## Sixth�generation,�high�speed�soft�switching�series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=75.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.85<br>2.15<br>2.25|2.15<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=75.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|2.10<br>2.15|2.20<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=3.50mA,_V_CE=_V_GE|5.1|5.7|6.3|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>3500|1600<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|600|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=75.0A|-|60.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|4900|-|pF|
|Output capacitance|_C_oes||-|360|-||
|Reverse transfer capacitance|_C_res||-|225|-||
|Gate charge|_Q_G|_V_CC=960V,_I_C=75.0A,<br>_V_GE=15V|-|530.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=600V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=4.0Ω,_R_G(off)=4.0Ω,<br>_L_σ=70nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|32|-|ns|
|Rise time|_t_r||-|32|-|ns|
|Turn-off delaytime|_t_d(off)||-|300|-|ns|
|Fall time|_t_f||-|31|-|ns|
|Turn-on energy|_E_on||-|2.20|-|mJ|
|Turn-off energy|_E_off||-|2.95|-|mJ|
|Total switchingenergy|_E_ts||-|5.15|-|mJ|
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IKY75N120CS6
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## Sixth�generation,�high�speed�soft�switching�series
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=600V,<br>_I_F=75.0A,<br>_di_F_/dt_=2700A/µs,<br>_L_σ=70nH,<br>_C_σ=67pF|-|205|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|4.70|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|76.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1500|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=600V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=4.0Ω,_R_G(off)=4.0Ω,<br>_L_σ=70nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|33|-|ns|
|Rise time|_t_r||-|33|-|ns|
|Turn-off delaytime|_t_d(off)||-|370|-|ns|
|Fall time|_t_f||-|58|-|ns|
|Turn-on energy|_E_on||-|3.30|-|mJ|
|Turn-off energy|_E_off||-|5.30|-|mJ|
|Total switchingenergy|_E_ts||-|8.60|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=600V,<br>_I_F=75.0A,<br>_di_F_/dt_=2700A/µs,<br>_L_σ=70nH,<br>_C_σ=67pF|-|340|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|10.60|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|105.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1050|-|A/µs|
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Datasheet
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IKY75N120CS6
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300<br>a a ee VGE=20V /<br>17V<br>100 ee0) N00 ( NN 250 15V Nf Sh<br>not for linear use<br>13V<br>Se2 LALoe Fn TTT | 2 200 11V Sy)Hh /<br>9V<br>10 7V<br>2 SY<br>a es 150 \ ‘K<br>O PT PP<br>ee \fY<br>= ee = 100 IK/<br>1<br>se<br>50<br>0.1 eea a 0 i )££ AA<br>1 10 100 1000 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Figure 2.<br>( Forward D T vj plas safe V GE operating area h Typical ( T vj=25°C) output characteristic<br>limite by T vjmax 5°C; ) =15V, pulse widt!<br>300 300<br>VGE=20V / Tvj —— = 25°C /<br>Tvj = 175°C<br>17V<br>J Fee<br>250 15V 250<br>13V<br>~ 7 i ||<br>11V<br>200 200<br>9V<br>7V<br>PLES<br>150 150<br>OLNWMy Y leO<br>100 100<br>WE<br>50 50<br>fT |p<br>(AS LY<br>0 AT | | | | 0<br>0 1 2 3 4 5 6 2 4 6 8 10 12 14<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 3. Typical output characteristic Figure 4. Typical transfer characteristic<br>( T vj=175°C) ( V CE=20V)<br>I C I C<br>I C I C<br>**----- End of picture text -----**<br>
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Datasheet
2018-08-07
IKY75N120CS6
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**----- Start of picture text -----**<br>
3.5 a 1000<br>IICC = 37.5A = 75A aeoaon- [[_ a PONaes ee<br>IC = 150A<br>S 3.0 oer a a e ee ee ee ee<br>= ceo I td(off) Q O<br>tf<br>td(on)<br>2.5 tr<br>100<br>< -—— n _<br>” weet<br>[a 2.0 -_-— im SS SS<br>bu _—— = a ee ee ee<br>E —_-—T7 - ee ee ee<br>ui 1.5 SS eee OQee eeea ee eeeeee<br>re =<br>tL4_ 1.0 ”. 10 EEaa eea<br>Q a ee<br>a<br>0.5<br>0.0 1<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 5. Typical collector-emitter saturation voltage as Figure 6. Typical switching times as a function of<br>a function of junction temperature collector current<br>( V GE=15V) (inductive load, T vj =175°C, V CE=600V,<br>V GE =0/15V, R G=4 Ω , Dynamic test circuit in<br>Figure E)<br>td(off) td(off)<br>1000 tf 1000 tf<br>1 | td(on) (eee t td(on) a eeee<br>| —— tr a—__ee ee eee | —— tr a ee—_—<br>SS ee<br>a a eeeea ee ee eee SS a a eeeee<br>eee e e<br>wD wD<br>iS iS<br>» titi<br>100 100<br>~ a SS | tty e~ aELa| |<br>- a es ee ee ee ee ee - a<br>(5 PS Se a a lh<br>> a a ee a edie ee<br>= meee<br>f t<br>GSa fT Ft | | eee| ee| ee| ee | & LEeee, ceREft FFs Fara eee ereft we em mom<br>n<br>10 10<br>n G<br>aeea a [_—aassee<br>a ee ee ee ee ee a ee e ee<br>a a a ee ee<br>1 1<br>0 2 4 6 8 10 12 14 16 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 7. Typical switching times as a function of gate Figure 8. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =75A, Dynamic test circuit in I C =75A, R G=4 , Dynamic test circuit in Figure<br>Figure E) E)<br>t<br>CEsat<br>V<br>t t<br>**----- End of picture text -----**<br>
Datasheet
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2018-08-07
IKY75N120CS6
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**----- Start of picture text -----**<br>
8 18<br>typ. Eoff<br>min. Eon<br>max. 16 Ets<br>Lu 7 ,<br><x¢ ee2 14 e ee/<br>EF 1 =E<br>>Lu /<br>Q— 6 dp)ip) 12 Fa<br>5 ~ nes > /<br>10<br>5<br>8<br>ii 4 ~ FE 6 / \Y -<br>LU ~ = / - -_<br>q ae / 7<br>Oo . 4 , r =<br>3<br>2 rh4 /Jo 7<br>4 -<br>2 0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 9. Gate-emitter of junction ( _I_ C=3.5mA)
Figure 10.
(inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _R_ G=4 Ω , Dynamic test Figure E)
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**----- Start of picture text -----**<br>
16 10<br>Eoff Eoff<br>Eon a 9 Eon<br>14 Ets 7 Ets<br>amp) ap) 8 ra<br>12<br>Lu : Lu 7<br>Jp) Y oO oo?<br>(op) 7 (op) -<br>10<br>aa) ¢ a 6 -<br>> vv > oor<br>OP<br>8 5<br>i we} 2 ———<br>oO oO 4<br>6<br>= 7 =<br>Be anne eae<br>3<br>4<br>ef9) rere lle9) | =<br>2<br>ean 2<br>1<br>0 0<br>0 2 4 6 8 10 12 14 16 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =75A, Dynamic test circuit in I C =75A, R G=4 , Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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IKY75N120CS6
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**----- Start of picture text -----**<br>
14 4000<br>Eoff Tvj = 25°C<br>Eon Tvj = 175°C<br>Ets 3500<br>12<br>o<br>3000<br>10<br>o 7 < NY<br>2e) 7ae fe)aa 2500<br>aé 8 tt ”eT 7) \ \<br>oO o Zz<br>:~ oe imeh 2000 ON‘\<br>2 a _ te \S<br>6<br>1500<br>gp—— a] x x<br>5 -~ | 8 SS<br>4<br>5- 1000<br>--<br>= _<br>2 —_<br>500<br>0 0<br>400 450 500 550 600 650 700 750 800 0 2 4 6 8 10 12 14 16<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] R G , GATE RESISTOR [ Ω ]<br>/dt<br>F<br>E di<br>**----- End of picture text -----**<br>
Figure 13.
(inductive load, _T_ vj =175°C, _V_ GE=0/15V, _I_ C =75A, _R_ G=4 , Dynamic test circuit in Figure E)
Figure 14.
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**----- Start of picture text -----**<br>
(inductive load, V CE =600V, V GE=0/15V,<br>I C<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
16 Lt<br>V CC Cies<br>V CC 1E+4 Coes<br>14 = 1a FE Cres Lt<br>-—— / H _ |<br>7 es<br>/ a<br>im> 12 / ) / Aeea|TT<br>=1: 10 eRQa \ , | |<br>1000<br>w<br>LuE 8 PF | J Zz< ENaDn Ss se<br>o a a ee ee<br>= E a Oe i ee ee<br>i a ne<br>6<br>a) 100<br>5 ~ f | | | |<br>- 4 [_—a ss<br>a<br>aa eeee ee<br>2<br>0 10<br>0 100 200 300 400 500 600 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 15. Typical ( _I_ C=75A)
Figure 16.
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**----- Start of picture text -----**<br>
( V GE<br>**----- End of picture text -----**<br>
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Datasheet
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IKY75N120CS6
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**----- Start of picture text -----**<br>
= 0.1 nn Ges TT<br>= PE<br>Xx CoCoSear en a ee<br>Sear oe Coon) x, aie re HA<br>O SS VF D = 0.5 O 0.1 St i D = 0.5 PEE<br>z<2 SeZTa A TAH|| | 0.20.1 ll TTI TTI z Va,TETSo St—— 0.20.1 kta a|<br>aya 0.01 TT eect!A ABEtm 0.05 II 9ay COea)ay roe||| 0.05 On|<br>Z ceiPeeaeret 0.020.01 TIL 2 0.01 aesPm 0.020.01<br>w }_|_ see AY / | et mw a ameel! ——TT<br>single pulse single pulse<br>F ee UTI LL TL THN AN ec<br>2 a a a a ae 2 a cit<br>0.001<br>0.001<br>A —— Fee -- (l<br>-Z A CHEIc GHa Vie, cette ihitTTZ aSiAEEoesii oecai s ip c Yor, in cote, g = ||Hl<br>EA AE AR<br>) A { HUME i: ET 1 2 TET 3 EPP 4 5 6 TPH | pee i: 1 2 3 4 5<br>ri[K/W]: 7.4E-4 0.031224 0.033227 0.108076 5.3E-3 1.3E-3 ri[K/W]: 0.08116 0.11422 0.20483 9.7E-3 1.8E-3<br>τ i[s]: 3.4E-5 3.4E-4 2.9E-3 0.01786 0.227615 3.143017 τ i[s]: 3.2E-4 3.1E-3 0.0161 0.22001 2.7875<br>1E-4 4 a a a | 1E-4 a5) Ui ET TT |<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 17. IGBT transient thermal resistance Figure 18. Diode transient thermal impedance as a<br>( D = t p/T) function of pulse width<br>( D = t p/T)<br>900 14<br>Tvj = 25°C, IF = 75A Tvj = 25°C, IF = 75A<br>Tvj = 175°C, IF = 75A Tvj = 175°C, IF = 75A<br>800<br>12<br>\ ~ a<br>700<br>2 \ w —— —<br>lu \ 0) 10 ~~]<br>= 600 \ <<br>s5<br>i<br>a 500 ag 8<br>OO<br>¥ 400 . g<br>a ‘ ~s » 6 LL |<br>300<br>4<br>200<br>2<br>|<br>100<br>| |<br>0 0<br>1000 1500 2000 2500 3000 3500 1000 1500 2000 2500 3000 3500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>c)th(j- c)th(j-<br>Z Z<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 19.
( _V_ R=600V)
Figure 20.
( _V_ R=600V)
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Datasheet
2018-08-07
IKY75N120CS6
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140 0<br>Tvj = 25°C, IF = 75A Tvj = 25°C, IF = 75A<br>Tvj = 175°C, IF = 75A -300 Tvj = 175°C, IF = 75A<br>120 EJ) ] NESS<br>a<br>— ° -600 Nee<br><x 7 oY <><br>100<br>-900<br>Gi < < \<br>5 7 ° \,<br>1200<br>Bf7 80 eTZ| de3 PANN<br>7<br>1500<br>60<br>1800<br>o<br>2100<br>Ww 40 ZO id<br>-2400<br>Bp NN<br>20<br>-2700<br>0 -3000<br>1000 1500 2000 2500 3000 3500 1000 1500 2000 2500 3000 3500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=600V) current slope<br>( V R=600V)<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>
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6 LT 300 as /<br>Tj=25°C, IF = 75A Tvj = 25°C<br>Tj=175°C, IF = 75A Tvj = 175°C<br>Sa = /<br>a 5 | 250 || //<br>=<br>i<br><<br>Q<br>4 200<br>> WW<br>19) iad /<br>owWw oc5 /<br>Zz 3 s) 150 /;<br><x<br>OoLWu i7 m4aQ<br>O 2 — —_—_—_——_—T_| 9 100<br>;<br>S<br>1 50<br>0 0<br>1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 6<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I F<br>E<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
( _V_ R=600V)
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Datasheet
2018-08-07
IKY75N120CS6
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4.0<br>IF = 37.5A<br>IF = 75A<br>3.5 IF = 150A<br>3.0<br>Lu<br>Oo<br><x 2.5<br>Kk<br>I<br>><br>Q 2.0<br>m4<br>ef4 1.5 a<br>;<br>1.0 P| | tt<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 25.
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Datasheet
2018-08-07
IKY75N120CS6
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## Sixth�generation,�high�speed�soft�switching�series
## **PG-TO247-4-2**
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M<br>A<br>E<br>A2 E2<br>R<br>b2<br>b4<br>E3 b6 H<br>2x<br>E1<br>1 2 3 4<br>b 4 3 2 1<br>e1 A1<br>e<br>b7<br>c<br>D3<br>D1 D D2<br>D4<br>N<br>L1<br>L<br>**----- End of picture text -----**<br>
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PACKAGE SURFACE ROUTE BETWEEN PIN 1 & PIN 2 WILL BE 5.1mm MIN.
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MILLIMETERS<br>DIMENSION<br>MIN. MAX.<br>A 4.9 5.1<br>A1 2.31 2.51<br>A2 1.9 2.1<br>b 1.16 1.29<br>b2 1.36 1.49<br>b4 2.16 2.29<br>b6 1.16 1.45<br>b7 1.16 1.65<br>c 0.59 0.66<br>D 20.9 21.1<br>D1 22.3 22.5<br>D2 15.95 16.55<br>D3 1 1.35<br>D4 1.6 1.8<br>E 15.7 15.9<br>E1 3.9 4.1<br>E2 13.1 13.5<br>E3 2.58 2.78<br>e 2.54<br>e1 5.08<br>H 0.8 1<br>L 19.8 20.1<br>L1 2.55 2.85<br>M 0.97 1.57<br>N 3.24 3.44<br>R 1.9 2.1<br>**----- End of picture text -----**<br>
ALL b... AND c DIMENSIONS INCLUDING PLATING EXCEPT AREA OF CUTTING
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DOCUMENT NO.<br>Z8B00182798<br>REVISION<br>01<br>SCALE 2:1<br>0 5 10mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>23.09.2016<br>**----- End of picture text -----**<br>
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V�2.2 2018-08-07
Datasheet
IKY75N120CS6
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## Sixth�generation,�high�speed�soft�switching�series
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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V�2.2 2018-08-07
Datasheet
IKY75N120CS6
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## Sixth�generation,�high�speed�soft�switching�series
## **Revision�History**
IKY75N120CS6
## **Revision:�2018-08-07,�Rev.�2.2**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2018-05-07|Final data sheet|
|2.2|2018-08-07|Fig.5 and Fig.25 legend correction|
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V�2.2 2018-08-07
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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