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IKW75N65RH5XKSA1
IGBT, 650 V, 80 A, 395W, To-247, 1.65 Vsat
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5 H5 CoolSiC Gen VI
- Power Dissipation: 395W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.49 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
## IKW75N65RH5
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TM<br>**----- End of picture text -----**<br>
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TRENCHSTOP [TM] 5 H5 IGBT co-packed with half-rated 6 th generation<br>CoolSiC [TM] Schottky barrier diode<br>Features and Benefits: C<br>¢ Ultra-low switching losses due to the combination of<br>TRENCHSTOP 5 and CoolSiC technology<br>¢ Benchmark efficiency in hard switching topologies<br>¢ Plug-and-play replacement of pure silicon devices<br>G<br>* Maximum junction temperature 175°C<br>E<br>* Qualified according to JEDEC for target applications<br>¢ Pb-free lead plating; ROHS compliant<br>* Complete product spectrum and PSpice models:<br>http://www.infineon.com/igbt/<br>—<br>Potential Applications: 7 ineop<br>¢ Industrial Power Supplies<br>-- IndustrialIndustrial SMPSUPS 7 4 £<br>* Energy Generation<br>- Solar String Inverter<br>* Energy Distribution<br>- Energy Storage 1<br>¢ Infrastructure — Charge 2<br>3<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKW75N65RH5|650V|75A|1.65V|175°C|K75ERH5|PG-TO247-3|
Datasheet www.infineon.com
2020-07-27
IKW75N65RH5
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## Hybrid�CoolSiC[TM] �IGBT
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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## Hybrid�CoolSiC[TM] �IGBT
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_C||80.0<br>75.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||300.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||300.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||45.7<br>30.7|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||112.5|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||395.0<br>198.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.38|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.20|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) Pulse current level depends on Tvj of diode chip, see also Fig. "Maximum pulse current as a function of junction temperature"
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## Hybrid�CoolSiC[TM] �IGBT
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=75.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.35<br>1.55<br>1.65|1.50<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.75mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>2500|1000<br>-|µA|
|Zero gate voltage collector current|_I_CES|_V_CE=480V,_V_GE=0V<br>_T_vj=25°C|-|-|30|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=75.0A|-|105.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V<br>_f_=250kHz|-|4000|-|pF|
|Output capacitance|_C_oes||-|460|-||
|Reverse transfer capacitance|_C_res||-|15|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=75.0A,<br>_V_GE=15V|-|168.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=37.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|26|-|ns|
|Rise time|_t_r||-|9|-|ns|
|Turn-off delaytime|_t_d(off)||-|180|-|ns|
|Fall time|_t_f||-|15|-|ns|
|Turn-on energy|_E_on||-|0.36|-|mJ|
|Turn-off energy|_E_off||-|0.30|-|mJ|
|Total switchingenergy|_E_ts||-|0.66|-|mJ|
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## Hybrid�CoolSiC[TM] �IGBT
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=7.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|26|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|3|-|ns|
|Turn-off delaytime|_t_d(off)||-|220|-|ns|
|Fall time|_t_f||-|35|-|ns|
|Turn-on energy|_E_on||-|0.07|-|mJ|
|Turn-off energy|_E_off||-|0.08|-|mJ|
|Total switchingenergy|_E_ts||-|0.15|-|mJ|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=37.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|24|-|ns|
|Rise time|_t_r||-|12|-|ns|
|Turn-off delaytime|_t_d(off)||-|205|-|ns|
|Fall time|_t_f||-|18|-|ns|
|Turn-on energy|_E_on||-|0.45|-|mJ|
|Turn-off energy|_E_off||-|0.40|-|mJ|
|Total switchingenergy|_E_ts||-|0.85|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=7.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=9.0Ω,_R_G(off)=9.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|240|-|ns|
|Fall time|_t_f||-|40|-|ns|
|Turn-on energy|_E_on||-|0.09|-|mJ|
|Turn-off energy|_E_off||-|0.11|-|mJ|
|Total switchingenergy|_E_ts||-|0.20|-|mJ|
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IKW75N65RH5
## TM Hybrid CoolSiC IGBT
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400 90<br>360 Nae 80<br>320 PN 70 TQ<br>280<br>ef \Je 60 |<br>pg) 240 NE<br>50<br>PP 200 \ 8 a<br>40<br>Pp Ng 160 ooN ]8 FA:<br>30<br>PIN de Fe<br>120<br>fee ee 20<br>8040 ee 10 en<br>Ne<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Figure 2.<br>temperature temperature<br>( Power T vj ≤ 175°C) dissipation as a function of case ( i V GE ≥ T vj ≤ 175°C) as a function of case<br>300 300<br>270 270<br>SRRnn) Seen<br>240 240<br>VGE=20V VGE=20V<br>eA) eZre<br>18V 18V<br>210 210<br>15V 15V<br>| 4s 180 180 |<br>eo) 12V Se 12V ee<br>150 10V 150 10V<br>8V 8V<br>120 120<br>as 7V | 7V eer<br>90 6V 90 6V<br>5V 5V<br>: i’ arn : i" Za<br>60 60<br>30 30<br>Gn) ANeneen neZennne<br>AN ||lCOL_LA<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Typical ( _T_ vj=25°C)
Figure 4. Typical ( _T_ vj=150°C)
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TM
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300 Lt n<br>Tj=25°C<br>270 Tj=150°C<br>Ed LH<br>240<br>e ee<br>Co<br>< 210<br>im<br>pf<br>& 180 |<br>.3s | lf<br>w 150<br>ee<br>120<br>|<br>ui |<br>oe) ee<br>90<br>°. /<br>60<br>30<br>AL<br>0<br>4<br>2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5<br>V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical transfer characteristic<br>( V CE=20V)<br>I C<br>**----- End of picture text -----**<br>
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2.50 Ld<br>IC=18.75A<br>IC=37.5A<br>2.25 IE IC=75A<br>z<br>OoEe 2.00 — a 1<br>ra<br><x 1.75<br>2<br>EIE<br>oa 1.50<br>© 1.25<br>ee<br>3 1.00<br>2_ f | | i] [|]<br>0.75<br>0.50<br>eeeee<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 6. Typical a function ( _V_ GE=15V)
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1000 a SS SS SS 1000 a SS SS ES ES<br>|1 td(off) a ee ee | td(off) Ee ee<br>I tf eS i tf a a<br>td(on) td(on)<br>tr tr<br>FE | a fs ee ee | FE es b e e ee e ee eee<br>f p | | CT | a ae<br>p t t | | | | | of oe TT |<br>[Litt<br>100 100<br>ip) a PeT erry:Ll L poettit ee|<br>uw poea aOP ip) aa aeselee<br>= a a ee ee = a ee ee es ee eee<br>-Q= a [ee] eeotee ee ee= = a Ea -aeeeeee e eeee<br>= ee aae~<br>= .<br>eft = ee<br>2)- 10 Se)2) 10 a a<br>aa ee ss es a a<br>aa a ee ee ee aeeee ee<br>ee a Deee<br>PF | | | | rt dT | Pf ft | hc] |<br>1 1<br>0 25 50 75 100 125 150 175 200 225 0 5 10 15 20 25 30 35 40<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>t t<br>**----- End of picture text -----**<br>
Figure 7.
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Datasheet<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, R G=9 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
Figure 8. Typical **resistor**
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, I C =37.5A, Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
1000 aa 5.5<br>1 H td(off) a aa a I— typ. |<br>I tf a ee ee ee eee _<br>td(on) 5.0<br>I a eeee<br>tr<br>p od <x 4.5<br>e)<br>-f [||]:<br>iFip) 100 aa es Qi 4.0 ee<br>im poa a a (e)<br>a<br>3.5<br>- ee eee<br>-<br><= a Wy a<br>3.0<br>a ee ee —<br>=<br>3<br>2)7 10 poREa hake Ww== 2.5 ™<br>ee<br>a eseo) 2.0<br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a function<br>junction temperature of junction temperature<br>(inductive load, V CE =400V, V GE=15/0V, ( I C=0.75mA)<br>I C =37.5A, R G=9 , Dynamic test circuit in<br>Figure E)<br>14 2.50<br>Eoff Eoff<br>Eon 2.25 Eon<br>Ets 7 Ets<br>12<br>7<br>z , z 2.00<br>(ep) 10 / (¢p) “<br>nm 7 Ww 1.75<br>2p) / ” :<br>—! uA a] 1.50<br>8<br>ow J/ w ra<br>2 / Wi 1.25<br>6<br>g / (ec g 1.00 if<br>E / 4 E 0.75 : <<br>4<br>¢<br>; 4 Bf ee<br>0.50<br>- ra ,J ° = = Pa<br>2 4<br>Ae aa<br>0.25<br>0 0.00<br>[aa] o*ae pt ey te<br>0 25 50 75 100 125 150 175 200 225 0 5 10 15 20 25 30 35 40<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>t<br>GE(th)<br>V<br>E E<br>**----- End of picture text -----**<br>
Figure 11.
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Datasheet<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, R G=9 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
Figure 12.
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, I C =37.5A, Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
1.2 1.2<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>1.0 1.0<br>z z a<br>E 4 o£ es<br>tt 0.8 poe if 0.8 jena<br>o o 7<br>O (e) 7<br>aa] a] ra<br>O O<br>om ow “7<br>Ww 0.6 Ww 0.6<br>Zz Zz we<br>Lu Ww Pa<br>oO iV) on _ -_<br>= _-— = -_—<br>0.4 0.4<br>E= >. F= ot<br>a in aaa<br>0.2 0.2<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,<br>I C =37.5A,37.5A R G=9 , DDynamicictesttest circuitcircuit iin I C = 3 7.5A,7.5A R G=9 , D Dynamicictesttest circuitcircuit iin<br>Figure E) Figure E)<br>0.1 —————————————— eee 16 |<br>Tvj=175°C 130V<br>x ————————————— 520V<br>Tvj=150°C 14 —<br>ima 0.01 a Tvj=100°C ss = 7 4<br>~ poeeeNNNeee ee<br>Tvj=25°C 12<br>0.001<br>oOFe ee ee eeeee LO)<br>Oo poeeNN eee el1 en a< 10 y, y/,<br>1E-4<br>O es | ee ee ee ay Lay Ae i 8<br>uw ee ee ee ee ee) 2 eee E<br>1E-5<br>e¢ {fou i|\\i “77 || 5s L<br>6<br>> ee Cs A x<br>1E-6<br>\W<xoO SSSaPhSneEEE EEE ee). 4 /<br>i) —————————————EEE<br>i 1E-7 aEEaa eee 2<br>ee es<br>a ee<br>1E-8 ee ee 0<br>100 200 300 400 500 600 700 0 20 40 60 80 100 120 140 160 180<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>E E<br>GE<br>V<br>I CES<br>**----- End of picture text -----**<br>
Figure 15.
Figure 16. Typical ( _I_ C=75A)
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TM
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Cies<br>1E+4 fr Coes | fT TT rr i a<br>I| Cres en a fi! a eeeyyy mnt<br>—— — —— MTA Tt |<br>D=0.5<br>ee 0.1 | ai 0.2 |<br>1000<br>0.1<br>0.05<br>SSS<br>Ww 8 He 0.02<br>a w |_| vey A HM pe anil<br>z a es es es ees fe" es0240S0 0.01<br>100 single pulse<br>eeees Mei |TP Hil<br>oO a a fl.<br>ee A aml<br>0.01<br>a i ee ee ee ee A eT<br>10<br>P|eneen gsi P ATNI)A s oie, yt ote ic a|<br>—————————a TAU UN CU ETT TI FT<br>i: 1 2 3 4 5 6<br>ri[K/W]: 0.03677099 0.03468995 0.033681 0.087894 0.085504 0.10146<br>τ i[s]: 5.2E-5 3.7E-4 3.7E-4 3.3E-3 0.021173 0.107752<br>1 fF | | fl tl 0.001 A<br>0 ee 5 10 15 20 25 30 ee 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 17. Typical capacitance as a function of Figure 18. IGBT transient thermal resistance<br>collector-emitter voltage ( D = t p/T)<br>( V GE =0V, f=250kHz)<br>C<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
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350<br>1<br>> Woe Ty.<br>=x PEEeee Nesrtoe 300<br>aT ee ae D=0.5<br>| ae ey ci e l<br>r 0.2 .<br>250<br>5 O N |”<br>0.1<br>; Te )<br>0.05<br>ti~ 0.1 mmmyfANce)c<br>2 SeeSeareeaen a 0.02 a eo) 200 \<br>S A 0.01 a ja)<br>e ECT ae aa single pulse TT W \<br>maF Be aa Se HIMGtlI MOLI MIIil) 02 150 X<br>a ATML)<br>ulZz 0.01 eR ,Ne mR tL 8© 100<br>a CE core, Conteris il<br>AU TTT TT Pot ool 50<br>i: 1 2 3<br>ri[K/W]: 0.386101 0.480029 0.33387<br>τ i[s]: 3.6E-4 2.4E-3 0.01997<br>0.001 a i| 0 Py yy} yl<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 25 50 75 100 125 150 175<br>t p ,PULSE WIDTH [s] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 19. Diode transient thermal impedance as a Figure 20. Maximum pulse current as a function of<br>function of pulse width junction temperature<br>( D = t p/T)<br>I Fpuls<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
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Datasheet
2020-07-27
IKW75N65RH5
TM
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120 LY 3.0<br>Tj=25°C IF=15A<br>= Tj=150°C | ‘ / IIFF=30A=60A<br>100 2.5<br>/ ee -<br>£ =. cae<br>=i 80 / oy uwx4 2.0<br>e / 5<br>as)S) 60 / oO> 1.5 _<br>:<br></ KS<br>=a a<br>O. 40 /Oo- 1.0 ————_— |<br>/<br>20 0.5<br>WA4<br>0 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 21. Typical diode forward current as a function Figure 22. Typical diode forward voltage as a function<br>I F V F<br>**----- End of picture text -----**<br>
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Datasheet
2020-07-27
IKW75N65RH5
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## Hybrid�CoolSiC[TM] �IGBT
## **Package Drawing PG-TO247-3**
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MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A 4.70 5.30<br>A1 2.20 2.60<br>A2 1.50 2.50<br>b 1.00 1.40<br>b1 1.60 2.41 DOCUMENT NO.<br>b2 2.57 3.43 Z8B00003327<br>c 0.38 0.89 REVISION<br>D 20.70 21.50 06<br>D1 13.08 17.65<br>D2 0.51 1.35 SCALE 3:1<br>E 15.50 16.30 0 1 2 3 4 5mm<br>E1 12.38 14.15<br>E2 3.40 5.10<br>E3 1.00 2.60 EUROPEAN PROJECTION<br>e 5.44<br>L 19.80 20.40<br>L1 3.85 4.50<br>P 3.50 3.70<br>Q 5.35 6.25 ISSUE DATE<br>S 6.04 6.30 25.07.2018<br>**----- End of picture text -----**<br>
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V�2.1 2020-07-27
Datasheet
IKW75N65RH5
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## Hybrid�CoolSiC[TM] �IGBT
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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V�2.1 2020-07-27
Datasheet
IKW75N65RH5
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## Hybrid�CoolSiC[TM] �IGBT
## **Revision�History**
IKW75N65RH5
## **Revision:�2020-07-27,�Rev.�2.1**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.1|2020-03-20|PreliminaryData Sheet|
|2.1|2020-07-27|Final Data Sheet|
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V�2.1 2020-07-27
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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