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IKQ40N120CT2XKSA1
IGBT, 80 A, 1.75 V, 500 W, 1.2 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 2
- Power Dissipation: 500W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.05 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## IKQ40N120CT2
## TRENCHSTOP[TM]
ce(sat)
ce(sat)
## **Features:**
CE(sat) circuit withstand time at T vj=175°C capability due to positive V CE(sat)
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*« Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt<br>Applications:<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKQ40N120CT2|1200V|40A|1.75V|175°C|K40MCT2|PG-TO247-3-46|
Datasheet www.infineon.com
2017-06-09
IKQ40N120CT2
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## TRENCHSTOP[TM] �2�low�Vce(sat)�second�generation�IGBT
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Datasheet
IKQ40N120CT2
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## TRENCHSTOP[TM] �2�low�Vce(sat)�second�generation�IGBT
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||1200|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=135°C|_I_C||80.0<br>40.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||160.0|A|
|Turn off safe operating area<br>_V_CE≤1200V,_T_vj≤175°C,_t_p=1µs|-||160.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_F||80.0<br>40.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||160.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤600V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=175°C|_t_SC||10|µs|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=135°C|_P_tot||500.0<br>133.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-C)||-|-|0.30|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-C)||-|-|0.50|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
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IKQ40N120CT2
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## TRENCHSTOP[TM] �2�low�Vce(sat)�second�generation�IGBT
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.75<br>2.30|2.15<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.90<br>1.85|2.30<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.00mA,_V_CE=_V_GE|5.1|5.8|6.5|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>3000|250<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|15.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2385|-|pF|
|Output capacitance|_C_oes||-|235|-||
|Reverse transfer capacitance|_C_res||-|132|-||
|Gate charge|_Q_G|_V_CC=960V,_I_C=40.0A,<br>_V_GE=15V|-|190.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=90nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|32|-|ns|
|Rise time|_t_r||-|43|-|ns|
|Turn-off delaytime|_t_d(off)||-|328|-|ns|
|Fall time|_t_f||-|51|-|ns|
|Turn-on energy|_E_on||-|3.10|-|mJ|
|Turn-off energy|_E_off||-|2.90|-|mJ|
|Total switchingenergy|_E_ts||-|6.00|-|mJ|
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IKQ40N120CT2
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## TRENCHSTOP[TM] �2�low�Vce(sat)�second�generation�IGBT
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=600V,<br>_I_F=40.0A,<br>_di_F_/dt_=1000A/µs|-|298|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|3.10|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|18.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-120|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=90nH,_C_σ=67pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|30|-|ns|
|Rise time|_t_r||-|44|-|ns|
|Turn-off delaytime|_t_d(off)||-|420|-|ns|
|Fall time|_t_f||-|110|-|ns|
|Turn-on energy|_E_on||-|5.10|-|mJ|
|Turn-off energy|_E_off||-|4.70|-|mJ|
|Total switchingenergy|_E_ts||-|9.80|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=600V,<br>_I_F=40.0A,<br>_di_F_/dt_=1000A/µs|-|488|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|7.40|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|27.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-103|-|A/µs|
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Datasheet
5
IKQ40N120CT2
ce(sat)
## TRENCHSTOP[TM]
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100 | |) | 500<br>AH 7 th<br>P| ATT TE ETT TTT 400<br>_ Aee ee<br>< {A not for linear use U<br>5 TI Ti =<br>[— Z<br>10 300<br>CO Fee S g<br>O88 Reet eet<br>oc a<br>O a eel o<br>200<br>BF I<br>a O<br>SLO 1 TON | &<br>0 EEE EHRSE<br>pT TE TTTTTT<br>aeeeeeel| 100<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE=15V) temperature<br>( T vj ≤ 175°C)<br>80 160<br>VGE=20V<br>70 NN ™ 140 17V »~<br>15V<br>60 \ _ 120 13V<br>_x PP IN | x W/EiN J<br>11V<br>eto LIN ye Lae<br>50 100 9V<br>si si Th A<br>7V<br>eee eee), ae<br>© 40 © 80 UY<br>Oef O 5V x /<br>30 60<br>A ye LAY<br>PE La<br>20 40<br>PA XE<br>10 20<br>pit A C CS<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5 6<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>
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Datasheet
2017-06-09
IKQ40N120CT2
ce(sat)
## TRENCHSTOP[TM]
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160 160<br>VGE=20V Tvj = 25°C<br>Tvj = 175°C<br>140 PNY! 17V | 140 —LY<br>a Ed<br>15V<br>120 13V 120<br>x a ee ae |<br>11V NIN SS = /<br>5 100 9V NOES LA] 100 /<br>oe 7V \ N\/ rw oe<br>3 \ KE 3<br>80 80<br>5V<br>O<br>u 60 60<br>8 We u [<br>~ Wx XK| 8<br>[KX<br>40 40<br>ANNE eee eee<br>20 20<br>Ze A<br>0 0<br>0 1 2 3 4 5 6 2 4 6 8 10 12 14 16 18<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical transfer characteristic<br>( T vj=175°C) ( V CE=20V)<br>I C I C<br>**----- End of picture text -----**<br>
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4.5 1000<br>a<br>IC = 20A a<br>a ee es ee es<br>IC = 40A<br>4.0 IC = 80A<br>_ = a a i es ee<br>td(off)<br>ef 3.5 e R tf<br>E ee ttd(on)r<br>: = = fo<br>ee ee<br>3.0 100<br>= - = — a<br>o ues uw a a<br>tut 2.5 “7 -= a eea ee ee<br>2.0<br>a) ja = eee ee ee<br>re =<br>Oen 1.5 aeee—$ (7p) 10<br>Ww i ee ee . a<br>4 po<br>Ss}. 1.0 FT ] ff yd a aa ee ee<br>0.5<br>0.0 1<br>25 50 75 100 125 150 175 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
(inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =15/0V, _r_ G=12 Ω , Dynamic test Figure E)
Datasheet
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2017-06-09
IKQ40N120CT2
ce(sat)
## TRENCHSTOP[TM]
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1000 1000<br>a<br>a ee eee pT<br>a a a a es a a<br>a ee ee ee ee a<br>eee eee td(off) | | a es ee<br>tf<br>td(on)<br>4 tr | | NS td(off) e es eee ee ee<br>tf<br>td(on)<br>e= 100 a ee) e Pe = 100 t tr al<br>ip) a es {_ oo eT<br>im a ee ee ee ee ip) a es ee ee ee<br>= a a a Sees ee | a i<br>- po ee = ee ee<br>OQ aa eaeee aeeeee eeeee ee P ee ee eefee eeed e eeed<br>a cee e e<br>E E<br>=<br>2)7 10 a =2) 10 a eS<br>a es 7<br>a ss es a ee es<br>aaee ee ee ee a ee<br>De De a<br>Pf; ft | hm] | || a a<br>1 1<br>0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=15/0V,<br>V GE =15/0V, I C =40A, Dynamic test circuit in I C =40A, r G=12 , Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>
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7.0 Ld 27<br>typ. Eoff<br>cc 6.5 min.max. 24 EEonts //<br>Ww AL /<br>g fo |<br>6.0 7 21<br>FEe -| 7)ii)<br>fe)> 5.5 Pwnil~SL Ff | ie& //<br>18<br>Soe SL HM /<br>o 5.0 Oe ~ = ‘s a / J<br>15<br>4.5 NN N<br>12<br>: 4.0 a<br>L a \ = y<br>NO 9<br>f1 3.5 Ee 7<br>ee ee: : _<br><x \ no 6 ra L id<br>: 3.0 2ezZeae<br>2.5 3<br>2.0 0<br>25 50 75 100 125 150 175 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11. of ( _I_ C=1mA)
Figure 12.
(inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =15/0V, _r_ G=12 Ω , Dynamic test Figure E)
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Datasheet
2017-06-09
IKQ40N120CT2
## TRENCHSTOP[TM]
## ce(sat)
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15.0 10<br>Eoff Eoff<br>13.5 Eon 9 Eon<br>Ets Ets<br>y 12.0 S y 8 a<br>op) a n Le<br>10.5 7 7 —<br>e) “7 @) a<br>pa)5 9.0 | a7 | pa)3 6<br>7.5 b= “| § 5 4<br>ee =><br>9 6.0 ee< 9 4 1<br>ae ee ee<br>4.5 3<br>nn<br>3.0 2<br>1.5 1<br>0.0 0<br>0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=15/0V,<br>V GE =15/0V, I C =40A, Dynamic test circuit in I C =40A, r G=12 , Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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15.0 16<br>Eoff V CC<br>13.5 Eon _- V CC = 960V<br>Ets 14 VA<br>_ 12.0 7 /<br>¢ —a a => 12<br>10.5<br>oo <x<br>no “ i) 4 /<br>(e) oa 4 10 -—<br>a 9.0 fe)<br>> oc ><br>Zzi 7.5 “7 Uo] £ 8<br>woe - s<br>Zz 6.0 i — Ww| 6<br>ee<br>S B 4.5 ] a<br>a _—ae $<br>4<br>aT<br>3.0<br>° ee 2 yf ><br>1.5<br>0.0 0<br>400 450 500 550 600 650 700 750 800 0 50 100 150 200 250<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical gate charge<br>function of collector emitter voltage ( I C=40A)<br>(inductive load, T vj =175°C, V GE=15/0V,<br>I C =40A, r G=12 , Dynamic test circuit in<br>Figure E)<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
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Datasheet
2017-06-09
IKQ40N120CT2
## TRENCHSTOP[TM]
ce(sat)
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**----- Start of picture text -----**<br>
1E+4 aa 300<br>H Cies<br>1 e ae eeaee<br>I Coes a ee ee ee =<br>Cres<br>a ——_—=<_—— x 250 /|<br>= | id /<br>ee ee ee: /<br>LL 1000 a w 200<br>& se<br>Ww ee ee [ro /<br>oO1. PRONa a Oo<br>e ===——=_ 150 nena<br>Ww ee eee 9 J<br>. 100 100<br>a ee eee A<br>po ke<br>ie<br>a eS oO A<br>a ee se O<br>50<br>10 0<br>0 5 10 15 20 25 30 10 11 12 13 14 15 16 17 18<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>C<br>I C(SC)<br>**----- End of picture text -----**<br>
Figure 17.
Figure 18.
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**----- Start of picture text -----**<br>
( V GE =0V, f=1MHz) ( V CE 600V, T vj 175°C)<br>4540 Pf fo ff pe a ll<br>eh : HTT eT<br>fi 35 | | | | wTce 0.1 eAIMMicone D = 0.5 ||||]<br>=F 12)Zz< |eemE bosee2|A| a a 0.20.1 |<br>30<br>D 2) HM Lege CECI<br>0.05<br>< i} ST a | BE<br>0.02<br>D 25 a St ne<br>0.01<br>: SLUT ee I<br>single pulse<br>20<br>| a<br>0.01<br>S 2 CHS<br>5 [gf] 0 15 \ | | ft Lude TaAYi I<br>bYO XQ Zz7) cePEI| AA TATEA Te R. |||<br>= 10 Dm a SN A -- |||<br>2 5 Py | CLSS F SLUMa aAvan aIM ITMfy i CT Gt CTT|<br>i: 1 2 3 4 5<br>ri[K/W]: 0.016055 0.117494 0.15756 3.3E-3 3.4E-4<br>τ i[s]: 4.1E-4 2.8E-3 0.018313 0.491884 12.38553<br>0 0.001<br>10 12 14 16 18 20 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>t SC c)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 19.
Figure 20. IGBT ( _D_ = _t_ p/T)
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( V CE 600V, start at T vj ≤ 175°C)<br>**----- End of picture text -----**<br>
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Datasheet
2017-06-09
IKQ40N120CT2
ce(sat)
## TRENCHSTOP[TM]
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1 800<br>a NH -—__|__<br>PTATT TT PTT Tvj = 25°C, IF = 40A<br>Tvj = 175°C, IF = 40A<br>700<br>= TTCC CCC erin . es Eo)<br>TheC aTwi |Z D = 0.5 \\<br>uloO 80 ow Yh7| 7an 600 \<br>0.2<br>Zz | YZ £<br>a 0.1<br>0.1<br>” al r ,<br>op)Ww [JOeeSee 8 A a 0.05 aPT kb_> 500 N ~ =<br>ing CT riteeery 0.02 COO on (a ~~ _]| —<br><x HI vad | iH<br>0.01<br>=2 Pil)AM et Earern ttUUM TM 68 400 | ~~<br>or er ATI 7 single pulse O<br>ul AA op pee oH w N<br>F ip | Ww 300 ><br>Wu 0.01 a dE Ww<br>(dp) PO ACTA ><br>Zz A Rp Mat Lu<br>s |Cn|A -- [i]Nt - 200<br>° [| A Sooo oo<br>© EVi U ale te HY] ||]<br>100<br>P LETALTTT VINE ETE UT<br>i: 1 2 3 4 5<br>ri[K/W]: 0.02668 0.22581 0.24167 5.3E-3 3.9E-4<br>τ i[s]: 3.3E-4 2.7E-3 0.01549 0.40258 11.77304<br>0.001 Hill eeTT 0 ee<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 500 700 900 1100 1300 1500<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Diode transient thermal impedance as a Figure 22. Typical reverse recovery time as a function<br>function of pulse width of diode current slope<br>( D = t p/T) ( V R=600V)<br>8 35<br>Tvj = 25°C, IF = 40A Tvj = 25°C, IF = 40A<br>Tvj = 175°C, IF = 40A Tvj = 175°C, IF = 40A<br>7 a |<br>30<br>Wu 6 —_-a |<br>25<br>a oc<br>Li > a<br>Oo 5 ) 7<br>: : Za<br>a, > 20 J 7 | ——_]<br>4<br>mt a 15 Z|<br>teWua 3 po owWwWWw 10 Wa<br>i ee<br>2<br>5<br>1 Pt | ff Pet tT |<br>0 0<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>c)th(j-<br>Z<br>Q rr I rr<br>**----- End of picture text -----**<br>
Figure 23.
( _V_ R=600V)
Figure 24.
( _V_ R=600V)
11
Datasheet
2017-06-09
IKQ40N120CT2
## TRENCHSTOP[TM]
ce(sat)
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**----- Start of picture text -----**<br>
0 LE 160 es V<br>Tvj = 25°C, IF = 40A Tvj = 25°C / }<br>Tvj = 175°C, IF = 40A Tvj = 175°C<br>-20 | 140 es / /<br>/<br>wD<br>x,a -40 x 120 / /<br>5<br>=: -60 Lu 100 /<br>23° MP~ \ =S: ) fi] YAEL<br>2 -80 Q a 80<br>4N<br>g<br>-100 |~~ S 60<br>(e) - : /<br>i). -120 —_ h~ ~~. IN rs~ 40 f<br>-140 20<br>-160 0 =_<br>500 700 900 1100 1300 1500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>/dt I F<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 25.
Figure 26.
( _V_ R=600V)
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3.0<br>IF = 20A<br>IF = 40A<br>IF = 80A<br>2.5<br>2.0<br>ke<br>I<br>e)<br>><br>Ww Tyr<br>Qg 1.5 ee ——<br>x<br>(e)<br>1.0<br>0.5<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 27.
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Datasheet
2017-06-09
IKQ40N120CT2
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �2�low�Vce(sat)�second�generation�IGBT
## **Package Drawing PG-TO247-3-46**
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MILLIMETERS INCHES<br>DIM<br>MIN MAX MIN MAX<br>A 4.90 5.10 0.193 0.201 DOCUMENT NO.<br>A1 2.31 2.51 0.091 0.099 Z8B00174295<br>A2 1.90 2.10 0.075 0.083<br>b 1.16 1.26 0.046 0.050 SCALE 0<br>b1 1.96 2.25 0.077 0.089<br>b2 1.96 2.06 0.077 0.081<br>0 5 5<br>c 0.59 0.66 0.023 0.026 7.5mm<br>D 20.90 21.10 0.823 0.831<br>D1 16.25 16.85 0.640 0.663<br>EUROPEAN PROJECTION<br>D2 1.05 1.35 0.041 0.053<br>D3 0.58 0.78 0.023 0.031<br>E 15.70 15.90 0.618 0.626<br>E1 13.10 13.50 0.516 0.531<br>E3 1.35 1.55 0.053 0.061<br>e 5.44 (BSC) 0.214 (BSC) ISSUE DATE<br>N 3 3 13-08-2014<br>L 19.80 20.10 0.780 0.791<br>L1 - 4.30 - 0.169 REVISION<br>R 1.90 2.10 0.075 0.083 01<br>**----- End of picture text -----**<br>
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V�2.2 2017-06-09
Datasheet
IKQ40N120CT2
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## TRENCHSTOP[TM] �2�low�Vce(sat)�second�generation�IGBT
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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V�2.2 2017-06-09
Datasheet
IKQ40N120CT2
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## TRENCHSTOP[TM] �2�low�Vce(sat)�second�generation�IGBT
## **Revision�History**
IKQ40N120CT2
## **Revision:�2017-06-09,�Rev.�2.2**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2017-05-12|Final data sheet|
|2.2|2017-06-09|Update Figure 26|
15
V�2.2 2017-06-09
Datasheet
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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