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IKFW75N60ETXKSA1
IGBT, 80 A, 1.5 V, 178 W, 600 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 178W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.91 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IKFW75N60ET
## TRENCHSTOP[TM]
## TRENCHSTOP[TM]
## **Features:**
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CE(sat)<br>¢ Short circuit withstand time 5us at T vj =<br>¢ Positive temperature coefficient in V CE(sat)<br>« Low EMI<br>* Very soft, fast recovery anti-parallel diode<br>* Maximum junction temperature 175°C<br>*2500V RMS — electrical isolation, 50/60 Hz, t<br>**----- End of picture text -----**<br>
http://www.infineon.com/igbt
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C<br>G<br>E<br>of 7<br>Fully isolated package TO-247<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKFW75N60ET|600V|75A|1.5V|175°C|K75DET|PG-TO247-3-AI|
Datasheet www.infineon.com
2017-09-21
IKFW75N60ET
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## TRENCHSTOP[TM] �Advanced�Isolation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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IKFW75N60ET
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## TRENCHSTOP[TM] �Advanced�Isolation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_h=25°C<br>_T_h=65°C<br>_T_h=65°C|_I_C||80.0<br>72.0<br>95.01)|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||225.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||225.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_h=25°Cvaluelimitedbybondwire<br>_T_h=65°C|_I_F||80.0<br>72.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||225.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_h=25°C<br>Powerdissipation_T_h=65°C|_P_tot||178.0<br>130.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|IsolationvoltageRMS,_f_=50/60Hz,_t_=1min2)|_V_isol||2500|V|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|0.71|0.84|K/W|
|Diode thermal resistance,3)<br>junction - heatsink|_R_th(j-h)||-|1.00|1.10|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
> 1) Equivalent current rating in TO-247-3 at Th = 65°C using reference insulation material: 152µm, 1.3 W/mK, standard polyimide based reinforced carrier insulator
> 2) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.
> 3) At force on body F = 500N, Ta = 25ºC
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## TRENCHSTOP[TM] �Advanced�Isolation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=75.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.50<br>1.90|2.00<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=75.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.45<br>1.40|1.75<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.20mA,_V_CE=_V_GE|4.1|4.9|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1200|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=75.0A|-|34.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|4726|-|pF|
|Output capacitance|_C_oes||-|215|-||
|Reverse transfer capacitance|_C_res||-|127|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=50.0A,<br>_V_GE=15V|-|440.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|690|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=5.0Ω,_R_G(off)=5.0Ω,<br>_L_σ=75nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|33|-|ns|
|Rise time|_t_r||-|45|-|ns|
|Turn-off delaytime|_t_d(off)||-|340|-|ns|
|Fall time|_t_f||-|35|-|ns|
|Turn-on energy|_E_on||-|2.70|-|mJ|
|Turn-off energy|_E_off||-|2.35|-|mJ|
|Total switchingenergy|_E_ts||-|5.05|-|mJ|
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## TRENCHSTOP[TM] �Advanced�Isolation
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=75.0A,<br>_di_F_/dt_=1000A/µs|-|107|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.94|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|23.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1687|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=5.0Ω,_R_G(off)=5.0Ω,<br>_L_σ=75nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|32|-|ns|
|Rise time|_t_r||-|47|-|ns|
|Turn-off delaytime|_t_d(off)||-|377|-|ns|
|Fall time|_t_f||-|40|-|ns|
|Turn-on energy|_E_on||-|3.96|-|mJ|
|Turn-off energy|_E_off||-|3.12|-|mJ|
|Total switchingenergy|_E_ts||-|7.08|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=75.0A,<br>_di_F_/dt_=1000A/µs|-|170|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|4.93|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|39.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1704|-|A/µs|
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IKFW75N60ET
## TRENCHSTOP[TM]
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180<br>160<br>6S<br>\<br>140<br>120<br>2<br> oexx 100<br>\<br>or 80<br>60<br>><br>40<br>\<br>20<br>Po) ff tL YY<br>0<br>= LIN LIN 25 50 75 100 125 150 175<br>T h , HEATSINK TEMPERATURE TEMPERATURE [°C]<br>Figure 2. Power dissipation as a function of heatsink<br>temperature<br>( T j ≤ 175°C)<br>tot<br>P<br>**----- End of picture text -----**<br>
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100<br>Yr f7T [ CeT T 140<br>not for linear use<br>120<br>6 Wi ioe co il 2<br>eex 10 | eee oexx 100<br>oc a0<br>oO a a ee) \<br>5 Pt TE or 80<br>eg<br>60<br>SE 1<br>oO EU LIN ><br>a 40<br>a<br>ee | \<br>20<br>Coo ee ee Po) ff tL YY<br>0.1 0<br>1 10 en 100 1000 = LIN LIN 25 50 75 100 125 150<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T h , HEATSINK TEMPERATURE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of heatsink<br>( D =0, T h =25°C, T j 175°C, V GE =15V, t p ≤ 1µs) temperature<br>( T j ≤ 175°C)<br>90 225<br>TO247 Advanced Isolation<br>TO247 with insulator film (using same chip)<br>80 200 VGE=20V<br>| ff<br>17V<br>B N E ff/<br>70 175<br>lll [<br>15V<br>ae5 60 eeN 150 13V L— WH|ee<br>Wu<br>Wu \ Z 11V |<br>eX 50 2 125 ‘aoe<br>9V<br>ee FEL 7V EE<br>40 100<br>fe)O SS \ o eeMY ] aee<br>mnPp 30 NAXN Omn 75 EA 5V \Ay<br>XN -<br>- PNASL LR<br>20 50<br>10 25<br>ee NG ee<br>PEN LASSJ<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5<br>T h , HEATSINK TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of heatsink Figure 4. Typical output characteristic<br>temperature ( T j=25°C)<br>( V GE ≥ 15V, T j ≤ 175°C, insulator film: 152yum,<br>1.3W/mK)<br>I C P tot<br>I C I C<br>**----- End of picture text -----**<br>
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IKFW75N60ET
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
225 225<br>Tvj = 25°C<br>Tvj = 175°C<br>200 VGE=20V 200<br>17V<br>175 ae =)ee air, a 175 EJ ffsJfj<br>15V<br>Zzb 150 13V 17/ bZz 150<br>WW WW /<br>ia 11V ia<br>125 125<br>O 9V HH | O<br>e 100 7V ae 100<br>O<br>5V Ww<br>Ww: [.—YL ee _e es)|}<br>oO 75 Wy) Z| oO 75<br>LOK<br>50 50<br>~ /<br>25 25<br>AX Y§<br>F o NN -2<br>0 0<br>0 1 2 3 4 5 6 4 6 8 10 12 14<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ j=175°C)
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**----- Start of picture text -----**<br>
Figure 6. Typical<br>( V CE=20V)<br>**----- End of picture text -----**<br>
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3.5<br>IC = 37.5A td(off)<br>IC = 75A 1000 tf<br>>a 3.0 | IC = 150A (F iz| ttd(on)r aa eeee LL |eeee<br>z a SS a<br>re) __ a ee ee ee eee<br>E ae rr ee<br>2.5<br>© ~ - | | | |<br>keEe =Cc<br>Er yy.<br>100<br>Lu 2.0 = a eS<br>= = poe<br>= a ee,<br>S oS) ee ee ee ee eee<br>rT = a ea ee<br>e 1.5 5 pee<br>se [| | i 5<br>: ft 10<br>1.0<br>Q | | 2 es<br>oO a<br>a<br>0.5<br>0.0 1<br>25 50 75 100 125 150 175 0 30 60 90 120 150<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>t<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
Figure 8.
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**----- Start of picture text -----**<br>
T j =175°C, V CE =400V, V GE=0/15V,<br>**----- End of picture text -----**<br>
_R_ G=5
Datasheet
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## IKFW75N60ET
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
ttd(off)f pe 1000 ttd(off)f<br>td(on) td(on)<br>1000 tr tr<br>ee -—-«£————————— SSE 1 a a ee<br>_ [$< oo _<br>- a - rs ee ee ee ee<br>ee ee 100 eee<br>Sf 100 ees_— BO a<br>Cn er<br>Zz es Oeeee eee<br>= a—e areOZ oe e eee<br>Bp<br>n n<br>Ss 10 ee 10<br>EE a a a<br>a a eessee<br>a a a<br>+} — ee<br>a aee<br>1 1<br>0 10 20 30 40 50 60 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(ind. load, T j =175°C, V CE =400V, V GE=0/15V, (ind. load, V CE =400V, V GE =0/15V, I C=75A,<br>I C =75A, test circuit in Fig. E) r G=5 , test circuit in Fig. E)<br>t t<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
6 20<br>typ. Eoff<br>oc are min. 18 Eon /<br>max. Ets<br>Ww ae /<br>16<br>— 5 _ /<br>oO “AQ op)<br>14<br>a ‘ /<br>aa] 12 vA<br>oc a /<br>+ 4 —™ 1 10 : /<br>- ~ Zz<br>8<br>pepo NB LZ<br>F ~~ Zz 7 : 7<br>Ww ~~ E 6 4 / Z|<br>3<br>°<br>5 (op) 4 a:<br>2 ?a<br>ee ee eeo _—<br>2 0<br>25 50 75 100 125 150 0 30 60 90 120 150<br>T j , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>of junction temperature function of collector current<br>( I C=1.2mA) (ind. load, T j =175°C, V CE =400V, V GE=0/15V,<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
R G=5<br>**----- End of picture text -----**<br>
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## IKFW75N60ET
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
27 8<br>Eoff / Eoff<br>Eon Y Eon<br>24 Ets ¢ 7 Ets<br>v . [“7]<br>yz 21 “ Zz . ae<br>6<br>my) re my)<br>io)&7) 18 P| | | ¢ft| &7)io) -<br>e) YY e) 5<br>pa v2 pa<br>>“><br>o~WwO 15 Fa Oo~ 4<br>Zz ¢ Ww =<br>WwO 12 ; /co 7wa aA| Wwz3 Leereo =_\— -<br>3<br>x== 9 7a“ “a x== nen ee — — ae<br>5 : <f S$ Pot]<br>” A | ” 2<br>Sf~ 6 > 5~ {| [—]<br>eT 1<br>3<br>0 0<br>0 10 20 30 40 50 60 25 50 75 100 125 150 175<br>R G , GATE RESISTOR [ Ω ] T j , JUNCTION TEMPERATURE [°C]<br>E E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Figure 13.<br>**----- End of picture text -----**<br>
Figure 14.
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**----- Start of picture text -----**<br>
(ind. load, T j =175°C, V CE =400V, V GE=0/15V, (indload, V CE =400V, V GE =0/15V, I C=75A,<br>I C =75A, test circuit in Fig. E) R G=5 , test circuit in Fig. E)<br>10 16<br>Eoff V CC<br>—_— = 120V /<br>9 EEonts ] 14 —- V CC =480V /<br>xa<br>> 8 [/]<br>E a“ S 12 /<br>” 7 Le? im /<br>io) 1S) 7<br>ro) a < 7<br>fe) “ a 10<br>6<br>o 5 ; [a] “| iw 8 oS<br>i “ “ E<br>OoZz 4 ” 7 oo =1 6<br>BL UT FE<br>re 3 ? a | a S<br>4<br>Zn- 2 eeo> am<br>| oo”<br>2<br>1 eT<br>0 0<br>200 250 300 350 400 450 500 0 100 200 300 400 500<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] Q GE , GATE CHARGE [nC]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical gate charge<br>function of collector emitter voltage ( I C=75A)<br>(ind. load, T j =175°C, V GE =0/15V, I C=75A,<br>R G=5 , test circuit in Fig. E)<br>GE<br>V<br>E<br>**----- End of picture text -----**<br>
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Datasheet
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## IKFW75N60ET
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
1200<br>Cies<br>1E+4 Coes 1100<br>Cres<br>FE j e < V4<br> OOSdSC eC 1000<br>ee es 4<br>ee es ee aee 900<br>en oO Wi<br>oO<br>& 1000 2 800<br><x a ee<br>E aNs a 700<br>g P\CN O 4<br>PN EE LY<br>eeee oe Kk 600<br>G<br>100 500<br>ee nyeee<br>E es eees ee 7p)I 400 J, ee<br>ee (ies 300 OO Oe<br>10 200<br>0 10 20 30 10 12 14 16 18 20<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical capacitance as a function of Figure 18. Typical short circuit collector current as a<br>C<br>I C(SC)<br>**----- End of picture text -----**<br>
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( V GE =0V, f=1MHz) ( V CE 400V, start at T j=25°C)<br>14 1<br>rt f | ff dd dy | TTT SS A naa a eee<br>a TT erin TTT<br>ry 12 Ff ff ff fl} yy | >S fT0 ec |eeATWV<br>D = 0.5<br>ENCOCCCCC S EE a co AM<br>0.2<br>: Ss = TIT i<br>PF Z iS, 0.1 Ll<br>Zz 10 EINE EEE Ee 0.1 |aea 48 BEE rT tT a<br>x- N a= = 7eeA Teee ee 0.05 EtCOT TT<br>2) r ttt A 0.02 |<br>0.01<br>E 8 Pt ff |X] Ly | z TIA emer TT<br>= NI rd Hh} A single pulse AM TTT<br>O Ly<br>eto dL NN ee<br>:en eeNOE it a|!<br>6 0.01<br>ag z TT TAT i Ry R Li<br>- i D i ee<br>oOI 4 PT ty yy) dddIN FEa TnIAT T TT)T T TT --> TMHil]<br>Hh<br>Se) i: ERE 1 2 nny 3 4 5 6 7<br>ri[K/W]: 1.5E-3 0.051315 0.060335 0.091839 0.31119 0.30371 0.02354<br>τ i[s]: 1.9E-5 2.5E-4 2.1E-3 0.019729 0.207847 0.931092 15.99232<br>2 0.001<br>10 11 12 13 14 15 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10<br>V GE , GATE-EMITTER VOLTAGE [V] t p , PULSE WIDTH [s]<br>Figure 19. Short circuit withstand time as a function of Figure 20. IGBT transient thermal impedance as a<br>gate-emitter voltage function of pulse width<br>( V CE 400V, start at T j 150°C) ( D = t p/T)<br>t SC h)th(j-<br>Z<br>**----- End of picture text -----**<br>
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TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
400<br>Tvj = 25°C, IF = 75A<br>1 Tvj = 175°C, IF = 75A<br>a 350 oe<br>Z Smee ewe ee<br>D = 0.5<br>Ww egy _ 300 \<br>S) Pe eee Ebel 0.2 | ee<br>Z eeecera’al A 0.1 =<br>eR lime 0 a \<br>0.1 Agi 0.05 250 .<br>a<x ee iSite|Ae 0.02 CT LU> ~N<br>=S e rme rt AU ee|Free| 0.01 CM Tn a= G |\ ‘“<br>wa ST Art Oo 200 .<br>single pulse<br>ui BEL A a til oe NN —<br>FSZC 0.01 Ne ceae)/ Aec)IPA 150 ~ NN ~~<br>© Conon Ry Re IT 100<br>PI I TT ATT Il<br>ke- CTEPAI TCICPATATTI TT) +cA1}imComtelRenm t-- i}_|ll ™ S——<br>CULT ATM TV TT Tm To<br>| WTA i: 1 2 CTC 3 4 CU 5 6 50<br>ri[K/W]: 0.023958 0.20273 0.18183 0.35024 0.31834 0.023474<br>τ i[s]: 3.2E-4 2.2E-3 0.016794 0.189957 0.886519 15.81528<br>0.001 0<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 400 500 600 700 800 900 1000 1100 1200<br>t p , PULSE WIDTH [s] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>h)th(j-<br>Z<br>**----- End of picture text -----**<br>
Figure 21.
( _D_ = _t_ p/T)
Figure 22.
( _V_ R=400V)
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6 45<br>Tvj = 25°C, IF = 75A Tvj = 25°C, IF = 75A<br>Tvj = 175°C, IF = 75A Tvj = 175°C, IF = 75A<br>EO<br>Sa 40 se<br>5<br>2 --T7 < 35<br>q ae 5 4<br>a4 Ww 7<br>< 4 or 30<br>)<br>uwzxin 25 c ea<br>3<br>5 S 7 4<br>20<br>e) S = an<br>or ow<br>ey 2 :D 15 a e<br>uw mf<br>10<br>g 1 TTT pial iti td<br>; Rae<br>5<br>0 0<br>400 500 600 700 800 900 1000 1100 1200 400 500 600 700 800 900 1000 1100 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Q rr I rr<br>**----- End of picture text -----**<br>
Figure 23. Typical function ( _V_ R=400V)
Figure 24.
( _V_ R=400V)
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IKFW75N60ET
## TRENCHSTOP[TM]
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0 ss 225 Le<br>Tvj = 25°C, IF = 75A Tvj = 25°C<br>-300 NE) SS Tvj = 175°C, IF = 75A 200 fe Tvj = 175°C fs<br>g /<br>-600<br>ELEN TT T 175 /<br>z NX ee e<br>sto -900 /<br>|eeN On:de 150 P T<br>a \ Lu<br>m -1200 a<br>125<br>PN<br>-1500<br>a om 100<br>-1800<br>a : J}<br>oO O 75<br>Wwraoe -2100 | uLNe:_<br>50<br>Oo -2400 \<br>-2700 25<br>eee eee eee<br>-3000 0<br>400 500 600 700 800 900 1000 1100 1200 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>di F /dt , DIODE CURRENT SLOPE [A/us] V F , FORWARD VOLTAGE [V]<br>I rr<br>I F<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 25.
Figure 26.
( _V_ R=400V)
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2.50<br>IF = 37.5A<br>IF = 75A<br>2.25 IF = 150A<br>2.00<br>Ww<br>4 1.75<br>ke<br>I<br>><br>Q 1.50<br>aa<br><x<br>1.25<br>1.00<br>ce<br>0.75<br>0.50<br>25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C]<br>F<br>V<br>**----- End of picture text -----**<br>
Figure 27.
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Datasheet
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## TRENCHSTOP[TM] �Advanced�Isolation
## **PG-TO247-3-AI (PGHSIP2473)**
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MILLIMETERS<br>DIMENSIONS<br>MIN. MAX.<br>A - 5.18 DOCUMENT NO.<br>A1 4.70 4.90 Z8B00186434<br>A2 2.23 2.59 REVISION<br>A3 0.20 0.28 02<br>b 1.10 1.30<br>c 0.50 0.70 SCALE 3:1<br>D 22.20 22.40 0 1 2 3 4 5 6 7 8mm<br>D1 16.96 17.16<br>E 15.70 15.90<br>E1 13.68 13.88 EUROPEAN PROJECTION<br>e 5.44<br>L 18.31 18.91<br>L1 2.76 2.96<br>øP 3.50 3.70<br>øP1 5.70 5.90 ISSUE DATE<br>Q 5.96 6.36 05.06.2018<br>**----- End of picture text -----**<br>
Note: For a proper handling and assembly of the advanced isolation device in the application the isolation layer must not be exposed to potential penetration via sharp implements or mechanical impacts/shocks, which exceed levels indicated in International Standard (IEC6006826 and IEC60068227). The advanced isolation device is intended only to be used assembled on an appropriate heatsink with recommended flatness of <20µm per 100mm and roughness of <10µm.
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## TRENCHSTOP[TM] �Advanced�Isolation
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## TRENCHSTOP[TM] �Advanced�Isolation
## **Revision�History**
IKFW75N60ET
## **Revision:�2017-09-21,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2017-09-21|Final data sheet|
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Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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