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IKD10N60RATMA1
IGBT, 20 A, 1.65 V, 150 W, 600 V, TO-252 (DPAK), 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:20A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:150W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-252; No. of Pins
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP RC
- Power Dissipation: 150W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-252 (DPAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 20A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 2500 |
| Price | 0.38 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT
## IKD10N60R
TM
IKD10N60R
## TRENCHSTOP[TM]
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Features:<br>TRENCHSTOP [TM] Reverse Conducting (RC)<br>applications offering<br>¢ Optimised V CEsat and V_ F for low conduction losses<br>* Smooth switching performance leading to low EMI<br>* Very tight parameter distribution<br>¢ Operating range of 1 to 20kHz<br>* Maximum junction temperature 175°C<br>¢ Short circuit capability of 5us<br>¢ Best in class current versus package size<br>* Qualified according to JEDEC for target<br>¢ Pb-free lead plating; ROHS compliant (for<br>temperature 260°C, MSL1)<br>* Complete product spectrum and PSpice Models:<br>http://www.infineon.com/igbt/<br>Applications:<br>* Consumer motor drives<br>**----- End of picture text -----**<br>
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C<br>G<br>E<br>C<br>pn<br>“Cp heap<br>“<52.9<br>Pa<br>G<br>ao<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKD10N60R|600V|10A|1.65V|175°C|K10R60|PG-TO252-3|
Datasheet www.infineon.com
2014-03-12
IKD10N60R
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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
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IKD10N60R
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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||20.0<br>10.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||30.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||30.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||20.0<br>10.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||30.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_c=25°C|_P_tot||150.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,1)<br>junction - case|_R_th(j-c)||-|-|1.00|K/W|
|Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|2.60|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|75|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|50|K/W|
1) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.
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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=10.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.65<br>1.85|2.10<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=10.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.70<br>1.70|2.10<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.17mA,_V_CE=_V_GE|4.3|5.0|5.7|V|
|Zero gate voltage collector current1)|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40<br>1000|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=10.0A|-|6.1|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|655|-|pF|
|Output capacitance|_C_oes||-|37|-||
|Reverse transfer capacitance|_C_res||-|22|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=10.0A,<br>_V_GE=15V|-|64.0|-|nC|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=25°C|-|74|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=60nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E|-|14|-|ns|
|Rise time|_t_r||-|10|-|ns|
|Turn-off delaytime|_t_d(off)||-|192|-|ns|
|Fall time|_t_f||-|139|-|ns|
|Turn-on energy|_E_on||-|0.21|-|mJ|
|Turn-off energy|_E_off||-|0.38|-|mJ|
|Total switchingenergy|_E_ts||-|0.59|-|mJ|
1) Not subject to production test - verified by design/characterization
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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=1000A/µs|-|62|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.56|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|20.3|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-260|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=60nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E|-|13|-|ns|
|Rise time|_t_r||-|11|-|ns|
|Turn-off delaytime|_t_d(off)||-|217|-|ns|
|Fall time|_t_f||-|211|-|ns|
|Turn-on energy|_E_on||-|0.35|-|mJ|
|Turn-off energy|_E_off||-|0.58|-|mJ|
|Total switchingenergy|_E_ts||-|0.93|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=1000A/µs|-|98|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.22|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|20.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-259|-|A/µs|
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Datasheet
IKD10N60R
## TRENCHSTOP[TM]
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11<br>10 UI<br>— ELI EU FAST<br>CERAM PL ANIN ENTAIL<br>9<br>10<br>OUI\ TUTE ETTATI or bperbers<br><x 8 Qo aepf eeNeaNNe<br>Zz| 7 COIR\ zZ§ poRSH tp=1µs er NN NT<br>WW WW pe er ONT<br>10µs<br>6<br>ST LAM TUINTE LUM & Eee ee inESA<br>20µs<br>ae a i | LA | NII<br>5<br>2 2 50µs rT<br>p L a<br>1<br>= 4 TVR PTT & 100µs cn<br>e) mel SF Re SS ttt<br>8 3 OMI CTIINCI\ | IN e)& 500µs aFRESE<br>> SS Se<br>2 COI > DC rereSot TEttET TN4ENTI I<br>A) = ESSERE<br>1<br>TTTTIN Ptot=8,6W,Rthja=8,4K/W TATE TAT =| Fi<br>\<br>rome o)<br>0 0.1<br>0.1 ooo 1 10 TR 100 | 1 LUI 10 CII 100 E T 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T vj 175°C; V GE=15V)<br>(Tvj ≤ 175°C, Ta=55°C, D=0.5, VCE=400V,<br>VGE=15/0V, rG=23 Ω , PCB mounting with<br>thermal vias and heatsink, see Appnote:<br>www.infineon.com/igbt)<br>160<br>20<br>140<br>INCU 120 EXEEEE<br>z e K<br>15<br>100<br>a =)<br>SeeNEEEEQ 80 oO<br>\ sto 10<br>60 \ i N<br>aN<br>40<br>[Pr]<br>5<br>SE TT [TRE]<br>20<br>Santa pt ey<br>0 0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 3. Power dissipation as a function of case Figure 4. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br>
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IKD10N60R
## TRENCHSTOP[TM]
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30 30<br>VGE=20V VGE=20V<br>17V 17V<br>25 15V — Jae 25 15V<br>13V Sy va 13V Sy, /<br>2) 11V SY 11V<br>20 20<br>9V le 9V ey<br>7V 7V<br>15 15<br>&<br>SOE SS<br>10 10<br>5 5<br>px fas<br>0 | 0 |<br>0 1 2 3 4 0 1 2 3 4<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _T_ vj=25°C)
Figure 6. Typical ( _T_ vj=175°C)
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30 3.5<br>Tj=25°C IC=5A<br>Tj=175°C IC=10A<br>IC=20A<br>3.0<br>esi, Et<br>25<br>/ 5 eet<br>2.5<br>EbSein 20 [ =) geeeeeceaa<br>2.0<br>PUP AER<br>15<br>1.5<br>COP Be<br>10<br>1.0<br>O<br>5<br>0.5<br>0 0.0<br>4 6 8 10 12 14 0 25 50 75 100 125 150 175<br>- V GE GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 7. Figure 8.<br>( Typical V CE=10V) transfer characteristic rypicat on of junction tompersture voltage as<br>( V GE=15V)<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>
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IKD10N60R
## TRENCHSTOP[TM]
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1000 a SS ES ES ES 1000 a a a<br>a | td(off) a a ee ee es<br>tf<br>pooN Sa 1I td(on) aeea aee ee ee ee<br>tr<br>poeaNP— | p eeeote| | eee<br>a= 100 e t td(off) a e = 100 a ae<br>tf<br>ip)im 11|| td(on) aaeeaee ee ee ee ip)| aaa aeees<br>tr<br>= = == ===— = aee<br>- Se I es a<br>OQ a e eee a ee ee ee ee ee<br>=<br>E E oo ae<br>Bt ee Bo Leppert<br>2) 10 a ee 2) 10 oe SE Ee<br>7 po 7 Se A OO<br>a ee es po<br>a<br>aa caa eeee eeeeee ee a e eeee ee<br>pert ee ee ee ee ee ee<br>1 1<br>0 5 10 15 20 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =175°C, V CE=400V,=400V, (inductive load, T vj =175°C, V CE=400V,=400V,<br>V GE =15/0V, r G=23=23 Ω , Dynamic test circuit in V GE =15/0V, I C =10A, Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>
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(inductive load, T vj =175°C, V CE=400V,=400V, (inductive load, T vj =175°C, V CE=400V,=400V,<br>V GE =15/0V, r G=23=23 Ω , Dynamic test circuit in V GE =15/0V, I C =10A, Dynamic test circuit in<br>Figure E) Figure E)<br>1000 aa 7<br>| 1 td(off) a aee ee ee typ.<br>I tf p o — min.<br>td(on) max.<br>tr<br>F he S =<br>| a ee ee ee ee Ww 6<br>_ =<br>—_—<br>_— (oe) ys<br>— 100 a eS a 7s<br>ip)uw porraa a (oe)a< 5 ~~ssPf<br>= a a NS _<br>- a Wy ae<br>Q ee ee ee :: os<br>ee ee~~<br>E = 4 = —<br>§ 10 bocce] E < —<br>. a es Ww ~~<br>a es 7 ~~<br>po wi<br>ee ~L<br>a ee se x ~~<br>a eseo) 3 ~<br>1 2<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 11.
Figure 12. Gate-emitter of junction ( _I_ C=0.17mA)
(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =10A, _r_ G=23 , Dynamic test circuit in Figure E)
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IKD10N60R
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
2.00 1.5<br>Eoff Eoff<br>Eon Eon<br>1.75 Ets Ets<br>5 vc 5 ea<br>& 1.50 Z = L “7<br>Lu 7 Lu ra<br>7)n 7 4 (op)7) 1.0 pra -<br>fo) 1.25 Z fe) Lec<br>pa) 7 aa) wee<br>> 7 > Dred<br>oO / oO<br>1.00<br>ff ff<br>g: 7 | a eep<br>0.75<br>: Z ye—|) 2 - _a<br>zZ Oe 0.5<br>FE y/o FE oa<br>ew eer TE :<br>. 0.50 7 ol ie a<br>on<br>0.25 Uey Ua = : | ok<br>- [—]<br>_<br>0.00 0.0<br>0 5 10 15 20 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =15/0V, r G=23 Ω , Dynamic test circuit in V GE =15/0V, I C =10A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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1.0 1.2<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>1.0<br>0.8<br>Ww > Ww ooo<br>7)o “7a 7)o 0.8 =o ec<br>>—! 0.6 - ee —!> -<br>rd oo ra 0.6 ee<br>ofZeT 0.4 oT|eye|eZ | [tev] [—pep<br>OSpe pe -—— O 0.4 ee<br>0.2<br>0.2<br>ie ee ee<br>0.0 0.0<br>25 50 75 100 125 150 175 300 350 400 450<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>
Figure 15.
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**----- Start of picture text -----**<br>
I C =10A, r G=23<br>Figure E)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
V CE =400V, V GE=15/0V,<br>**----- End of picture text -----**<br>
Figure 16.
(inductive load, _T_ vj =175°C, _V_ GE=15/0V, _I_ C =10A, _r_ G=23 , Dynamic test circuit in Figure E)
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Datasheet
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IKD10N60R
## TRENCHSTOP[TM]
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16 1000 a a<br>120V480V / / [a aeeee es eeee<br>14 7 Po<br>Cies<br>12 Coes<br>WW Cres<br>S 7 / = + ++<br>: et e<br>H 10 & fl<br>Ii 8 P| z= 100 A|i a<br>E= 9 Eeeeee<br>< a ee<br>ul a a Ne ee<br>6<br>b ° PONSRee ee<br>4<br>2<br>0 10<br>0 10 20 30 40 50 60 70 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of<br>( I C=10A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>150 14<br><<br>12<br>PaWw 8—<br>ia uw<br>ac© =a 10<br>or 100 Zz<br>e <<br>g 2 8<br>= E<br>fe) =<br>O EK<br>a)E a)O 6<br>O wa<br>aO<br>O 50<br>kK adkK 4<br>o (e)<br>(e) x<br>L 7p)<br>7) ~<br>2<br>0 0<br>12 14 16 18 20 10 11 12 13 14 15<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 19. Typical short circuit collector current as a Figure 20. Short circuit withstand time as a function<br>function of gate-emitter voltage gate-emitter voltage<br>( V CE 400V, start at T vj=25°C) ( V CE 400V, start at T vj ≤ 150°C)<br>C<br>GE<br>V<br>I C(SC) t SC<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM]
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1 SaTiee Ti Ly<br>= e e<br>Q | 1 sl /|<br>aT E L D=0.5 TN I<br>Hee ECCT AT AS |<br>9 ¢ 0.2 YT TT SST TT D=0.5<br>a TT TT LA LT UT 9 A CCT<br>0.1 0.2<br>a em aea<br>0.1 oe i 0.05 0.1<br>a! eeer re re|| 0.020.01 | a! nia <= Hf wei] 0.050.02 Alli<br>. Aeee single pulse ee Ss CTY 0.01<br>id a CIC ie<br>0.1 single pulse<br>5 ut LA <a a<br>LA , w eateee<br>0.01<br>2 a afl Y o2 ee a<br>| | || -- {i f | --<br>$F- PTAI 13 APPA<br>a Mc Ar, Coane, = (il - meant r ll C14 /R; Co=telRe<br>aaaea e a ed S/ LAHE Ta<br>i: 1 2 3 4 i: 1 2 3 4<br>ri[K/W]: 0.0972 0.4393 0.3919 0.0443 ri[K/W]: 0.3192 1.604 0.6161 0.0732<br>τ i[s]: 1.1E-4 4.5E-4 2.0E-3 0.03487 τ i[s]: 6.4E-5 2.6E-4 1.6E-3 0.0218066<br>li a L TT TTT Te Ter Se TT T<br>0.001 0.01<br>OO el O00<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 21. IGBT transient thermal impedance as a Figure 22. Diode transient thermal impedance as a<br>function of pulse width (see page 4) function of pulse width (see page 4)<br>( D = t p/T) ( D = t p/T)<br>150 1.50<br>Tj=175°C, IF = 10A Tj=175°C, IF = 10A<br>Tj=25°C, IF = 10A Tj=25°C, IF = 10A<br>125<br>Ea Eee<br>: e 1.25 | rT] | [fl<br>> 100 om t<br>- —— r<br>>O<br>1.00<br>: — f | | | |<br>><br>e): 75 >wi:<br>Wwep) i eee ee _ inauw 0.75<br>a 50 . | Bf<br>: Bf<br>° oo<br>0.50<br>: 2 re<br>25<br>0 0.25<br>900 1000 1100 1200 900 1000 1100 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>c)th(j- c)th(j-<br>Z Z<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 23. Typical of diode ( _V_ R=400V)
Figure 24.
( _V_ R=400V)
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IKD10N60R
## TRENCHSTOP[TM]
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22<br>Tj=175°C, IF = 10A<br>Tj=25°C, IF = 10A<br>— 4<br>- y v|<br>Ww 7<br>21<br>y<br>Ww<br>5<br>WwW “<br>crBf OU<br>20<br>oraaao<br>19<br>900 1000 1100 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>**----- End of picture text -----**<br>
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Figure 25. Typical<br>function<br>( V R=400V)<br>**----- End of picture text -----**<br>
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0<br>Tj=175°C, IF = 10A<br>Tj=25°C, IF = 10A<br>-100<br>2<br>x<br>re)<br>©<br>6 -200<br>©<br>PRa |<br>aS) |<br>* -300 So| |—_——|— *<br>-400<br>900 1000 1100 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 26.
( _V_ R=400V)
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**----- Start of picture text -----**<br>
30 2.5<br>Tj=25°C, UG=0V IF=5A<br>Tj=175°C, UG=0V IF=10A<br>IF=20A<br>aa a<br>= 20 Ww 2.0<br>“ EF<br>wI<br>5a // y<br>Oo // QO<br>9 rd<br>x <<br>$ =<br>=a x<br>10 1.5<br>0 1.0<br>0 1 2 3 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 27.
Figure 28.
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**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications
## Package Drawing PG-TO252-3
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|**A**<br>**DIM**<br>**b**<br>**A1**|**MILLIMETERS**|**MILLIMETERS**|
|---|---|---|
||MIN<br>2.16<br>064<br>0.00|MAX<br>2.41<br>0.15<br>089|
|**b3**<br>**b2**<br>**c**<br>|4,95<br>.<br>0.46<br>0.65|5.50<br>1.15<br>0.61<br>.|
|**c2**|0.40|0.98|
|**D**|5.97|6.22|
|**D1**|5.02|5.84|
|**E**|6.35|6.73|
|**E1**|4.32|5.21|
|**e**|2.29 (BSC)||
|**e1**|4.57 (BSC)||
|**N**|3||
|**H**|9.40|10.48|
|**L**|1.18|1.78|
|**L3**|0.89|1.27|
|**L4**|0.51|1.02|
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DOCUMENT NO.<br>Z8B00003328<br>SCALE 0<br>2.5<br>0 2.5<br>5mm<br>EUROPEAN PROJECTION<br>ISSUE DATE<br>05-02-2016<br>REVISION<br>06<br>**----- End of picture text -----**<br>
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IKD10N60R
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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications
## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## TRENCHSTOP[TM] �RC-Series�for�hard�switching�applications
## **Revision�History**
IKD10N60R
## **Revision:�2014-03-12,�Rev.�2.5**
Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.1|2010-01-12|-|
|2.1|2011-01-17|Release of final datasheet|
|2.2|2013-02-19|Changepackage|
|2.3|2013-12-10|New value ICES max limit at 175°C|
|2.4|2014-02-26|Without PB free logo|
|2.5|2014-03-12|Storage temp-55...+150°C|
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V�2.5 2014-03-12
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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