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IKB20N65EH5ATMA1
IGBT, 38 A, 1.65 V, 125 W, 650 V, TO-263 (D2PAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:38A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-263; No. of Pins:3
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 125W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-263 (D2PAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 38A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 1.07 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
IKB20N65EH5
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## TRENCHSTOP[TM]
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Features and Benefits: C<br>High speed H5d technology offering<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>* 650V breakdown voltage<br>G<br>«Low Q G E<br>¢ IGBT copacked with full rated current RAPID 1 fast antiparallel<br>diode<br>* Maximum junction temperature 175°C C<br>¢ Pb-free lead plating; ROHS compliant<br>http://www.infineon.com/igbt/ *« Complete product spectrum and PSpice Models: G) y<br>7026 On<br>Potential Applications: K9<br>« Energy Generation fe, /- Tt<br>- Solar String Inverter A f \<br>- Solar Micro Inverter Pe<br>G<br>¢ Industrial Power Supplies f<br>- Industrial SMPS<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IKB20N65EH5|650V|20A|1.65V|175°C|K20EEH5|PG-TO263-3|
Datasheet www.infineon.com
2018-01-11
IKB20N65EH5
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## High�speed�switching�series�5[th] �generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Datasheet
IKB20N65EH5
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## High�speed�switching�series�5[th] �generation
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||38.0<br>25.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||60.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs|-||60.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_F||40.0<br>27.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||60.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||125.0<br>62.5|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.20|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.50|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
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Datasheet
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## High�speed�switching�series�5[th] �generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.42<br>1.39|1.70<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.20mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1400|50<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=20.0A|-|24.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1200|-|pF|
|Output capacitance|_C_oes||-|30|-||
|Reverse transfer capacitance|_C_res||-|5|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=20.0A,<br>_V_GE=15V|-|48.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=32.0Ω,_R_G(off)=32.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|21|-|ns|
|Turn-off delaytime|_t_d(off)||-|160|-|ns|
|Fall time|_t_f||-|23|-|ns|
|Turn-on energy|_E_on||-|0.56|-|mJ|
|Turn-off energy|_E_off||-|0.13|-|mJ|
|Total switchingenergy|_E_ts||-|0.69|-|mJ|
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## High�speed�switching�series�5[th] �generation
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=32.0Ω,_R_G(off)=32.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|11|-|ns|
|Turn-off delaytime|_t_d(off)||-|160|-|ns|
|Fall time|_t_f||-|27|-|ns|
|Turn-on energy|_E_on||-|0.23|-|mJ|
|Turn-off energy|_E_off||-|0.05|-|mJ|
|Total switchingenergy|_E_ts||-|0.28|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=800A/µs|-|80|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.50|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|8.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-750|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=860A/µs|-|56|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.36|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|10.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-500|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=32.0Ω,_R_G(off)=32.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|22|-|ns|
|Turn-off delaytime|_t_d(off)||-|180|-|ns|
|Fall time|_t_f||-|19|-|ns|
|Turn-on energy|_E_on||-|0.70|-|mJ|
|Turn-off energy|_E_off||-|0.15|-|mJ|
|Total switchingenergy|_E_ts||-|0.85|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=10.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=32.0Ω,_R_G(off)=32.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns|
|Rise time|_t_r||-|12|-|ns|
|Turn-off delaytime|_t_d(off)||-|180|-|ns|
|Fall time|_t_f||-|23|-|ns|
|Turn-on energy|_E_on||-|0.34|-|mJ|
|Turn-off energy|_E_off||-|0.06|-|mJ|
|Total switchingenergy|_E_ts||-|0.40|-|mJ|
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## High�speed�switching�series�5[th] �generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=800A/µs|-|108|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.08|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|13.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-620|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=10.0A,<br>_di_F_/dt_=750A/µs|-|80|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.77|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|13.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-650|-|A/µs|
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IKB20N65EH5
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130 40<br>120<br>LTTTTT) 35 Roy fd).<br>110 es |<br>100 PNR 30<br>90<br>re 80 ee: 25 |<br>70<br>PORE EDEN<br>20<br>BN 60 ,<br>ee 50 15 ee<br>40<br>ef Nd NS<br>10<br>30 Se \<br>a<br>20<br>5<br>a<br>10<br>OS<br>0 Se 0 \<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>P tot I C<br>**----- End of picture text -----**<br>
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60 60<br>55 55<br>SRE ee Pp EAL |<br>50 50<br>PLL gp | pe pL |ea| |<br>VGE=18V VGE=18V<br>45 45<br>iL ceaUo | Lc<br>15V 15V<br>SL 40 12V a7 EOL 40 12V eeELTI |<br>e 35 | 10V Aa BL 35 10V Dea OK<br>30 8V 30 8V<br>3 ZW 8 || tLyy<br>7V 7V<br>25 25<br>Bee |<br>6V 6V<br>20 20<br>° e/a 5V AIA 5V<br>15 15<br>EEC) 4a a ey, 4V<br>10 10<br>a. | 2 ONS<br>5 5<br>LYN OLB<br>0 Pi Aa 0 | A NY<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Typical ( _T_ vj=25°C)
Figure 4. Typical ( _T_ vj=150°C)
Datasheet
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60 2.00<br>Tj=25°C IC=5A<br>55 Tj=150°C IC=10A<br>IC=20A<br>a ee<br>50 1.75<br>ft Pe Fe|<br>Se 45 PPP eBll= L = = ee_<br>40 1.50<br>Pa ttt titi ia) & fF |] ft |<br>Ww rE<br>ett 35 ee<x |<br>So) / / FE —_<br>owgs 30 fo | TeE 1.25 os<br>ee=e 25 eea es —_____]<br>a FE<br>fe) 20 / O 1.00<br>i: 15 ee fe)<br>| |<br>10 0.75<br>Pi ti ty [yy]<br>PEt yy<br>5<br>0 —— | 0.50<br>pp ttt TE CEE<br>3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 6. Typical a function ( _V_ GE=15V)
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1000<br>aSE td(off)d(off) SS ——SS ES SS<br>tff<br>i td(on)d(on) a<br>trr<br>F f.. ee<br>—<br>a<br>AE<br>&<br>100 L eeeeee<br>” —— a<br>So-- ppaa eekeeerekeeereeerere<br>Esese 10 eT]eae<br>a a<br>ee<br>1<br>10 20 30 40 50 60 70 80 90 100<br>R G , GATE RESISTOR [ Ω ]<br>Figure 8. Typical switching times as a function of<br>resistor<br>(inductive load, T vj =150°C, V CE=400V,<br>t<br>**----- End of picture text -----**<br>
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td(off)d(off)<br>tff<br>PEPE i a<br>td(on)d(on)<br>trr<br>>—t—__+—__ +__ F f.. ee<br>td(off)<br>Ee tf TT —<br>100<br>| td(on) a<br>1 tr he ee ee ee<br>eeL L AE<br>, a ec &<br>= a Se eeseee ed ee 100 L eeeeee<br>” Ne ee ee ” —— a<br>=- pt ft | Peet | So-- ppaa eekeeerekeeereeerere<br>E 10 eae<br>po epeseseseesst Esese 10 eT]eae<br>pt tT ft tT tt a a<br>Pt ite et ee<br>1 1<br>0 5 10 15 20 25 30 35 40 45 50 55 60 10 20 30 40 50 60 70 80 90<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>t t<br>**----- End of picture text -----**<br>
Figure 7.
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, R G=32 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
_V_ GE =0/15V, _I_ C Figure E)
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6.0<br>typ.<br>5.5<br>100 e t| ttd(off)f aa eeee e Q= 5.0<br>I td(on) a<br>a SSS tr ae es ee 4.5<br>9 ~; | | | | |g 4.0<br>2 foo POR<br>3.5<br><= -<br>aa ow<br>E 10 a kK 3.0 ——]<br>= a =<br>pop 2.5<br>2.0<br>1.5<br>1 1.0<br>25 50 75 100 125 150 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 9.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =20A, _R_ G=32 , Dynamic test circuit Figure E)
Figure 10.
( _I_ C=0.2mA)
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3.5 1.6<br>Eoff / Eoff<br>Eon Eon<br>3.0 Ets / 1.4 Ets 7 <<br>1.2<br>rm) 2.5 / ] 7<br>uw Y ‘ rm)uw a a .<br>O / O 1.0 s 4<br>— / J — , —<br>2.0<br>nm / nm 0.8 s<br>Zz / 7 Zz 7<br>1.5<br>Z ) Z 0.6 7 <<br>I|7r7<br>Oy O<br>1.0<br>; 0.4<br>C<br>0.5 7 A aM<br>0.2 |__ |<br>ea [=]<br>0.0 0.0<br>0 5 10 15 20 25 30 35 40 45 50 55 60 10 20 30 40 50 60 70 80 90 100<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, R G=32 Ω , Dynamic test circuit in V GE =0/15V, I C =20A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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High speed switching series 5 th generation<br>1.2 1.2<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>== == yo<br>Yo<br>1.0 1.0<br>F<br>& = “ L<br>+ 4<br>0.8 0.8<br>ae 7 4<br>> ae — > “ 4<br>O —_— O “ 7<br>x —_—— x 7 Za<br>Ww 0.6 = Ww 0.6 z 4<br>Zz -_—— Zz “ 4<br>uw uw “ a<br>Z Z “| 2<br>: 0.4 0.4<br>E= E= a<br>nn<br>0.2 0.2<br>0.0 0.0<br>25 50 75 100 125 150 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
Figure 14.
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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=0/15V, (inductive load, T vj =150°C, V GE=0/15V,<br>I C =20A, R G=32 , Dynamic test circuit in I C =20A, R G=32 , Dynamic test circuit in<br>Figure E) Figure E)<br>16 1E+4<br>— oe<br>1 | a es<br>130V 1 | Cies a ee<br>520V | Coes a ee ee ee ee<br>14 = Cres ———<br>— an | ee<br>i a e e ee eeee eeee<br>>.= 12 !J) 1000 ee r s rr re ee ee<br>oO — a es<br><x WL Ca es es<br>10 ] 2 PR<br>; 8 ) Zz2 100 heey\<br>= ~? Ce es<br>Lu= o pCNT<br>6 fj O ee<br>ul r— = a ee<br>Oey pNP<br>4 10<br>a i ee<br>po<br>2 a eeee<br>0 1<br>0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=20A) collector-emitter voltage<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
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( V GE<br>**----- End of picture text -----**<br>
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1 1<br>= Fr eA = FP Co Coo<br>N4 a| |<br>aT} D=0.5 4 D=0.5 |<br>Sg AIT PAI 0.2 CTH aT! HTH eA 0.2 CCT<br>< oomSe Re irr 0.1 EAty 0.1<br>0.05 0.05<br>Sm= 0.1 ST AA004 M0 =Samm 0.1 amn nt6200eee eet ee ee|<br>a ee | 0.02 | | | 0.02 |<br><x eeSeat sat 7ay Ail| ee | 0 oea SSSPT TTrr AVAPA TT 0<br>S 0.01 0.01 |<br>o¢ on Ae i on S EC Ae Co<br>single pulse single pulse<br>W PATI CEN ceecemn |e i a2 PT ete HII<br>a iP po Hill<br>F erm ern aeUT) PM raLH TIE TT EI UI<br>o 0.01 aerial il UUMEM 0.01<br>ZzGTee et ILI) dR, ELIR ti = coonFtmali AllTT II Hs 0 Re il<br>o |EC er --{i]tT & ee| -- LatIll<br>=- MEPT 7AT cGH ehie, G contre + i)ill - P TTI A LT ITT G chi, HG costes _ Mtlll<br>MT ALM EM | oot To a A |<br>| LU PET CPP A E<br>i: 1 2 3 4 5 6 i: 1 2 3 4 5 6<br>ri[K/W]: 0.014628 0.379807 0.573028 0.211451 0.018267 2.3E-3 ri[K/W]: 0.024075 0.499909 0.710519 0.239699 0.020917 2.5E-3<br>τ i[s]: 1.5E-5 3.4E-4 2.4E-3 0.013923 0.197253 2.48511 τ i[s]: 1.6E-5 3.4E-4 2.3E-3 0.014107 0.195819 2.379491<br>0.001 0.001<br>1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
> Figure 17. IGBT ( _D_ = _t_ p/T)
Figure 18. Diode function ( _D_ = _t_ p/T)
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130 1.4<br>Tj=25°C, IF = 20A Tj=25°C, IF = 20A<br>Tj=150°C, IF = 20A Tj=150°C, IF = 20A<br>120<br>1.2<br>\ ral<br>= 110 ~<br>eis | | fg 1.0 [op t t<br>F~~ x<br>> 100 Oo<br>0.8<br>WW> >o<br>oO 90 Oo<br>Boy g<br>0.6<br>80<br>:mf e 0.4 ft<br>foe TT<br>70<br>0.2<br>60 P| ff dL Pt tT | |<br>50 0.0<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 19. Typical reverse recovery time as a function Figure 20. Typical reverse recovery charge as a<br>of diode current slope function of diode current slope<br>( V R=400V) ( V R=400V)<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
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18 0<br>Tj=25°C, IF = 20A Tj=25°C, IF = 20A<br>Tj=150°C, IF = 20A Tj=150°C, IF = 20A<br>16 EJ -100<br>LE<br>-200<br>; 14 n<br>ocWW - x=ef -300 oo |<br>oa 12 a<br>o cs -400<br>ae eee<br>10<br>oO<br>-500<br>: en ee<br>aWw 8 L— ®a -600<br>aa 6 °<br>i BLN<br>-700<br>WW ne}<br>eeis 4 e e<br>-800<br>2 -900<br>0 -1000<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical peak reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>60 2.00<br>Tj=25°C<br>Tj=150°C<br>50<br>1.75<br>IF=10A<br>IF=20A<br>IF=40A<br>= 40 Ww<br>1.50<br>5 O i ee<br>: $0 poopopapada--~<br>° 30 0<br>a nd<br>S S 1.25<br>: 6o +<br>20<br>1.00<br>10<br>0 0.75<br>E v an pt | tf<br>0.0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I rr<br>/dt<br>rr<br>dI<br>I rrm<br>I F V F<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
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## High�speed�switching�series�5[th] �generation
## **Package Drawing PG-TO263-3**
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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||
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Datasheet<br>**----- End of picture text -----**<br>
V�2.1 2018-01-11
IKB20N65EH5
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## High�speed�switching�series�5[th] �generation
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## High�speed�switching�series�5[th] �generation
## **Revision�History**
IKB20N65EH5
## **Revision:�2018-01-11,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2018-01-11|Final data sheet|
15
V�2.1 2018-01-11
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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