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IHW40N135R5XKSA1
IGBT, 80 A, 1.65 V, 394 W, 1.35 kV, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:394W; Collector Emitter Voltage V(br)ceo:1.35kV; Transistor Case Style:TO-247; No. of Pi
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 394W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 1.35kV
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.63 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
IHW40N135R5
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C<br>monolithic body diode with low forward voltage<br>for soft commutation<br>_ technology offering:<br>tight parameter distribution<br>G<br>ruggedness, temperature stable behavior<br>E<br>CEsat<br>parallel switching capability due to positive<br>coefficient in V CEsat<br>EMI<br>according to JESD-022 for target applications 2<br>lead plating; ROHS compliant a,<br>free (according to IEC 61249-2-21) rp tinegy<br>product spectrum and PSpice Models: “Sg<br>cooking<br>ovens G<br>C<br>E<br>**----- End of picture text -----**<br>
## **Features:**
http://www.infineon.com/igbt/
## **Applications:**
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IHW40N135R5|1350V|40A|1.65V|175°C|H40PR5|PG-TO247-3|
Datasheet www.infineon.com
2018-09-17
IHW40N135R5
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## Resonant�Switching�Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
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Datasheet
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## Resonant�Switching�Series
## **Maximum�Ratings**
**For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||1350|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||80.0<br>40.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤1350V,_T_vj≤175°C,_t_p=1µs|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||80.0<br>40.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||120.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±25|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||394.0<br>197.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.38|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.38|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
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## Resonant�Switching�Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1350|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.95<br>2.05|1.95<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.95<br>2.30<br>2.40|2.15<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.00mA,_V_CE=_V_GE|5.1|5.8|6.4|V|
|Zero gate voltage collector current|_I_CES|_V_CE=1350V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>850|100<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|30.0|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2360|-|pF|
|Output capacitance|_C_oes||-|70|-||
|Reverse transfer capacitance|_C_res||-|60|-||
|Gate charge|_Q_G|_V_CC=1080V,_I_C=40.0A,<br>_V_GE=15V|-|305.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=25°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=175nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|410|-|ns|
|Fall time|_t_f||-|90|-|ns|
|Turn-off energy|_E_off||-|2.00|-|mJ|
|Turn-off energy, soft switching|_E_off|_dv/dt_=200.0V/µs|-|0.30|-|mJ|
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## Resonant�Switching�Series
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-off delaytime|_t_d(off)|_T_vj=175°C,<br>_V_CC=600V,_I_C=40.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.0Ω,_R_G(off)=10.0Ω,<br>_L_σ=175nH,_C_σ=40pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|480|-|ns|
|Fall time|_t_f||-|220|-|ns|
|Turn-off energy|_E_off||-|3.70|-|mJ|
|Turn-off energy, soft switching|_E_off|_dv/dt_=200.0V/µs|-|0.85|-|mJ|
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400<br>100 | 360 ON<br>eeee<br>i a ee 320 N<br>not for linear use<br>—=< (LA F alk To Lut)Ue = 280 Py IN\ ET EE<br>Se ioe 10 eee je)Bb 240 Ne\<br>BOOFSa SALYrGREER ESSEi}SHS 200 PET TEAL\ TLL}<br>S CIP<br>CeCeri ein) 9 160 PET TEEN | | | | 4<br>5)s- 1 ———LUMSs a&@° 120 EEN \ EL<br>a<br>CTa 80 PET TT EL LIN\ YI<br>I SRRReeEERNG<br>40<br>0.1 0<br>1 10 100 1000 25 50 75 100 125 150 175<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] T C , CASE TEMPERATURE [°C]<br>Figure 1. Forward bias safe operating area Figure 2. Power dissipation as a function of case<br>( D =0, T C =25°C, T vj 175°C; V GE =15V; t p=1µs) temperature<br>( T vj ≤ 175°C)<br>I C P tot<br>**----- End of picture text -----**<br>
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80 120<br>100<br>VGE=20V<br>60<br>< \ 17V +f /<br>5 \ <5 80 all; /<br>15V<br>13V<br>DD<br>:ag ag f<br>:w 40 \\ :3w 60 11V HT}|Aa<br>FE FE 9V<br>O \ O |/<br>5 O 7V | |<br>40<br>fe) fe) |<br>5V<br>20 \ 20 Ne<br>0 0<br>25 50 75 100 125 150 175 0 1 2 3 4 5<br>T C , CASE TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Collector current as a function of case Figure 4. Typical output characteristic<br>temperature ( T vj=25°C)<br>( V GE ≥ 15V, T vj ≤ 175°C)<br>I C I C<br>**----- End of picture text -----**<br>
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IHW40N135R5
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120 7 120 Ld<br>VGE=20V Tvj = 25°C<br>Tvj =175°C<br>17V<br>100 15V \ / 100 |<br>13V<br>11V<br>-E 80 \\ A - i 80<br>oc 9V oc /<br>2 WA g I<br>a) 7V a)<br>60 60<br>(e)S 5V \ Mi / (e)S |<br>==<br>Ww3 40 Uf Ww 40<br>Wy |<br>: __ 3<br>WY :<br>20 20<br>Jv |<br>0 0<br>0 1 2 3 4 5 0 2 4 6 8 10 12 14<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 5. Typical output characteristic Figure 6. Typical ( _T_ vj=175°C) ( _V_ CE=20V)
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3.5<br>IC = 20A<br>IC = 40A<br>IC = 80A<br>= 3.0 elo 27<br>5= oe<br>Ee oa<br>oa<br>Ee ue<br>2.5<br>Bo er<br>WW<br>or(oe) 2.0 _ — —_—<br>5 ae<br>lu= a _e<br>9<br>1.5<br>1.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 7. Typical a function ( _V_ GE=15V)
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td(off)<br>tf<br>1000 Ti A<br>I i |<br>a<br>= e<br>ory a S e ee ee e e ee<br>ef |---+-+-4<br>7<br>EeoO 100 A<br>= a<br>. Eea ee ee ee ee<br>a ee ee ee ee eee<br>10<br>0 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A]<br>t<br>**----- End of picture text -----**<br>
Figure 8.
(inductive load, _T_ vj =175°C, _V_ CE=600V, _V_ GE =0/15V, _r_ G=10 Ω , Dynamic test Figure E)
Datasheet
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1E+4 1000<br>1 se ttd(off)f a a I ttd(off)f a ee ee<br>ee a<br>I e e<br>z = Pict} | Ty tt yy<br>1000 a —o te {ttee<br>ip) ee ee _<br>im a esce ee ee ee ip) - -_<br>-7<br>2 100<br>: ee ee 2S<br>EF = Th EF2<br>z 100 ee = ft [tPrrprry]<br>ens ee dOyt<br>a eeee<br>es ee ee ee ee<br>10 10<br>0 10 20 30 40 50 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of gate Figure 10. Typical switching times as a function of<br>resistor junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =40A,Dynamic test circuit in I C =40A, r G=10 ,Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>
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7.0 7.0<br>Eoff<br>typ.<br>min.<br>max. 6.0<br>: =e ]} Fly<br>6.2 Ss<br>Qa):> >SSS . op)aa 5.0 / Va<br>ce) 5.4 ~ SSae (op)g<br>4.0<br>i > = Z<br>aa . wa VA<br>WwoE= 4.6 ~N ~ S SN SNG S WwOZz5 3.0 WA<br>ti aw . FE 2.0 /<br>S \ é<br>0) 3.8 Z -<br>NX 1.0 y<br>3.0 0.0<br>25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80<br>T vj , JUNCTION TEMPERATURE [°C] I C , COLLECTOR CURRENT [A]<br>Figure 11. Gate-emitter threshold voltage as a function Figure 12. Typical switching energy losses as a<br>of junction temperature function of collector current<br>( I C=1mA) T j V CE=600V,<br>V tote GE = oat; R G=10 tee, Ω , Dynamicic testtest circuitcircuit in<br>Figure E)<br>E<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
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6.0 4.0<br>Eoff Eoff<br>—— =)<br>5.5<br>3.5<br>Ww Ww<br>Pre)g “| Lae4 Cy/<br>5.0<br>éa] v1)—! 3.0 tityZ|<br>g: LLy ge TL A<br>4.5<br>: / Se<br>2 2.5<br>5<br>4.0<br>—=; / ( Z Be—= F ZO<br>2.0<br>| p ee ae<br>3.5<br>PC<br>3.0 1.5<br>0 10 20 30 40 50 25 50 75 100 125 150 175<br>r G , GATE RESISTOR [ Ω ] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of gate resistor function of junction temperature<br>(inductive load, T vj =175°C, V CE=600V, (inductive load, V CE =600V, V GE=0/15V,<br>V GE =0/15V, I C =40A, Dynamic test circuit in I C =40A, r G=10 ,Dynamic test circuit in<br>Figure E) Figure E)<br>5.5 2.0<br>Eoff Tvj = 25°C<br>1.8 Tvj = 175°C<br>5.0 — y EJ), /<br>1.6<br>op) or) /<br>Ww Ww 1.4<br>2 4.5 é2<br>g<br>—! 1.2<br>>>—! / g /<br>2<br>eT tit<br>4.0 1.0<br>s c s iy |<br>: / SY<br>22II= 0.8 /<br>3.5<br>0.6<br>; Zona<br>0.4<br>3.0<br>aA | a a<br>0.2<br>wia | | | |<br>2.5 0.0<br>400 500 600 700 800 900 1000 0 10 20 30 40 50 60 70 80<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] I C , COLLECTOR CURRENT [A]<br>E E<br>E E<br>**----- End of picture text -----**<br>
Figure 15.
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**----- Start of picture text -----**<br>
(inductive load, T vj =175°C, V GE=0/15V,<br>I C =40A, r G=10 ,Dynamic test circuit in<br>Figure E)<br>**----- End of picture text -----**<br>
Figure 16.
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**----- Start of picture text -----**<br>
V CE =600V, V GE=0/15V,<br>**----- End of picture text -----**<br>
_R_ G=10
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**----- Start of picture text -----**<br>
16 1E+4 aa<br>14 —- VV CCCC = =1080V / y7, 1 H I{ CCCiesoesres aaaa aaaee ee ee<br>y, a<br>/ | T T<br>S 12<br>1000<br>4 J / , | | | ft |<br>a 10 i a ee ee ee ee<br>fe) | Sf y Ww a<br>S oO Bh aee<br>owWW: 8 PF | Zero) ee ee ee<br>in: 6 2°< ikSanSS<br>100<br>O po ee<br>- EO<br>4 a ee=<br>a es<br>2<br>a a<br>0 10<br>0 62 124 186 248 310 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of<br>( I C=40A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
1 | 1 TT Ee<br>| | | | | | |<br>PT TT TT PT TT<br>CC ooo oo oon CC oo oo<br>PTE TT ||<br>_= Pf Ey = Pf i t<br>zg. ae a cael ema zg. I ect TT<br>ieee 0 s e e<br>D = 0.5<br>F 0.1 bZ F 0.1 WAI<br>UAC @ = COI<br>7) eri 0.2<br>Ww mmm eS /A ee | Ww aeme a TE Ht|<br>cE D = 0.5 HE = SS 0.1<br>z EIS 0.2 CM TM = eer TTT 0.05 1I<br>0.1 0.02<br>= ae eles L LUI EI) Ae eat 1<br>0.05<br>Bet Wa eh bei ese 0.01<br>0.02<br>single pulse<br>aLoO 0.01 B=7Vi AMUN)seaeRe 0.01 YAHE |HHH] Ea5 0.01 a)BKPe aac/HHI<br>single pulse<br>Zz eS Zz TAT<br>sean ACEly TT| TET [oo s PAV7A eo Tn PTT pe<br>/ ~<br>~ mnt Gage RO<br>PAI | UM gees — [I AIM (EITM UMM tosis carter Il<br>i: 1 2 3 4 i: 1 2 3 4<br>ri[K/W]: 6.6E-3 0.108909 0.154872 0.109704 ri[K/W]: 0.03881 0.08583 0.11772 0.13766<br>τ i[s]: 1.1E-5 2.9E-4 3.5E-3 0.02156 τ i[s]: 7.0E-5 1.0E-4 2.7E-3 0.02792<br>0.001 Nh ee| 0.001 f Hl PE ET<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]]<br>Figure 19. IGBT transient thermal resistance Figure 20. Diode transient thermal impedance as a<br>( D = t p/T) function of pulse width<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
( _D_ = _t_ p/T)
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120 Ld 4.0 a<br>Tvj = 25°C IF = 20A<br>Tvj = 175°C IF = 40A<br>IF = 80A<br>100 || | / 3.5 T T je"<br>= 80 uw 3.0 7<br>iM // iv)< - pe<br>ag / re} 7<br>3Q 60 / > 2.5<br>aw ce _<br><x = _<br>= 5 _<br>a _<br>oO oO<br>rm 40 f LL 2.0<br>| /‘ . ann<br>20 1.5<br>0 1.0<br>0 1 2 3 4 5 6 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 21.
Figure 22.
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## Resonant�Switching�Series
## **Package Drawing PG-TO247-3**
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Datasheet
IHW40N135R5
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## Resonant�Switching�Series
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
13
V�2.2 2018-09-17
Datasheet
IHW40N135R5
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## Resonant�Switching�Series
## **Revision�History**
IHW40N135R5
## **Revision:�2018-09-17,�Rev.�2.2**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2018-04-17|FINAL DATASHEET|
|2.2|2018-09-17|Added thermal network on Fig.19 & 20|
14
V�2.2 2018-09-17
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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