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IHW25N120R2FKSA1
IGBT, 50 A, 1.6 V, 365 W, 1.2 kV, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 365W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 50A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 3.73 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IHW25N120R2 Soft Switching Series ## Cinfineon ## Reverse Conducting IGBT with monolithic body diode **Features:** - Powerful monolithic Body Diode with very low forward voltage - Body diode clamps negative voltages - Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) - Low EMI - Qualified according to JEDEC[1] for target applications C G g E PG-TO-247-3 - Pb-free lead plating; RoHS compliant - Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ ## **Applications:** - Inductive Cooking - Soft Switching Applications |**Maximum Ratings **<br>~~FE~~|~~FE~~|~~J~~|~~J~~| |---|---|---|---| |**Parameter**|**Symbol**<br>~~—---—~~|**Value**<br>~~—---—~~|**Unit**| |Collector-emitter voltage|_V_C E<br>~~—---—~~|1200<br>~~—---—~~|V| |DC collector current<br>_T_C= 25°C<br>_T_C= 100°C|_I_C<br>~~—---—~~<br>~~pf~~|50<br>25<br>~~—---—~~<br>~~pf~~|A<br>~~ee~~| |Pulsed collector current,_t_plimited by _T_jmax|_I_C p u l s<br>~~pf~~<br>~~ee~~|75<br>~~pf~~<br>~~ee~~|| |Turn off safe operatingarea(_V_CE≤1200V,_T_j ≤175°C)|_-_<br>~~ee~~|75<br>~~ee~~|| |Diode forward current<br>_T_C= 25°C<br>_T_C= 100°C|_I_F<br>~~ee~~<br>~~pf~~|50<br>25<br>~~ee~~<br>~~pf~~|| |Diodepulsed current,_t_plimited by _T_jmax|_I_Fpu l s<br>~~pf~~|75<br>~~pf~~|| |Diode surge non repetitive current,_t_plimited by_T_jmax<br>_T_C= 25°C,_t_p= 10ms, sine halfwave<br>_T_C= 25°C,_t_p ≤2.5µs, sine halfwave<br>_T_C= 100°C,_t_p ≤2.5µs, sine halfwave<br>~~__}~~|_I_F S M<br>~~pf~~<br>~~ef~~<br>~~__}~~|50<br>130<br>120<br>~~pf~~<br>~~ef~~<br>~~__}__~~|| |Gate-emitter voltage<br>Transient Gate-emitter voltage (_t_p< 10 µs, D < 0.01)<br>~~__}~~|_V_G E<br>~~__}~~|±20<br>±25<br>~~__}__~~|V| |Power dissipation_T_C= 25°C<br>~~__}~~|_P_to t<br>~~__}~~|365<br>~~__}__~~|W| |Operating junction temperature<br>~~__}~~|_T_ j <br>~~__}~~<br>~~—_~~|-40...+175<br>~~__} __~~<br>~~—_~~|°C<br>~~eee~~| |Storage temperature|_T_stg<br>~~—_~~<br>~~ee~~|-55...+175<br>~~—_~~<br>~~eee~~|| |Solderingtemperature, 1.6mm(0.063 in.)from case for 10s|-<br>~~ee~~|260<br>~~eee~~|| 1 J-STD-020 and JESD-022 Rev. 2.3 Nov. 09 Power Semiconductors IHW25N120R2 Soft Switching Series ## **Thermal Resistance** |**Thermal Resistance**||||| |---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**|**Max. Value**|**Unit**| |**Characteristic**||||| |IGBT thermal resistance,<br>junction – case|_R_t h JC||0.41|K/W| |Diode thermal resistance,<br>junction – case|_R_t h JC D||0.41|| |Thermal resistance,<br>junction – ambient|_R_t h JA||40|| ## **Electrical Characteristic,** at _T_ j = 25 °C, unless otherwise specified |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**Typ.**|**max.**|| |**Static Characteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR )C ES|_V_G E=0V,_I_C=500µA|1200|-|-|V| |Collector-emitter saturation voltage|_V_C E(sa t )|_V_G E= 15V,_I_C=25A<br>_T_j=25°C<br>_T_j=150°C<br>_T_ j=175°C|-<br>-<br>-|1.6<br>1.95<br>2.0|1.8<br>-<br>-|| |Diode forward voltage|_V_F|_V_G E=0V,_I_F=25A<br>_T_j=25°C<br>_T_j=150°C<br>_T_j=175°C|-<br>-<br>-|1.5<br>1.75<br>1.8|1.75<br>-<br>-|| |Gate-emitter threshold voltage|_V_G E( th )|_I_C=0.58mA,<br>_V_C E=_V_G E|5.1|5.8|6.4|| |Zero gate voltage collector current|_I_C ES|_V_C E=1200V,<br>_V_G E=0V<br>_T_j=25°C<br>_T_ j=175°C|-<br>-|-<br>-|4<br>2500|µA| |Gate-emitter leakage current|_I_G E S|_V_C E=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_f s|_V_C E=20V,_I_C=25A|-|16.3|-|S| |Integratedgate resistor|_R G i n t_|||none||Ω| 2 Rev. 2.3 Nov. 09 Power Semiconductors Soft Switching Series ## IHW25N120R2 ## **Dynamic Characteristic** |**Dynamic Characteristic**||||||| |---|---|---|---|---|---|---| |Input capacitance|_C_i s s|_V_C E=25V,<br>_V_G E=0V,<br>_f_=1MHz|-|2342|-|pF| |Output capacitance|_C_o s s||-|68.7|-|| |Reverse transfer capacitance|_C_r s s||-|55.5|-|| |Gate charge|_Q_Ga te|_V_C C=960V,_I_C=25A<br>_V_G E=15V|-|60.7|-|nC| |Internal emitter inductance<br>measured 5mm(0.197 in.)from case|_L_E||-|13|-|nH| ## **Switching Characteristic, Inductive Load,** at _T_ j=25 °C |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ. **|**max.**|| |**IGBT Characteristic**||||||| |Turn-off delaytime|_t_d(o f f)|_T_j=25°C,<br>_V_C C=600V,_I_C=25A<br>_V_G E=0 /15V,<br>_R_G=10Ω,|-|324|-|ns| |Fall time|_t_f||-|55.8|-|| |Turn-on energy|_E_o n||-|-|-|| |Turn-off energy|_E_o ff||-|1.59|-|| |Total switchingenergy|_E_t s||-|1.59|-|mJ| ## **Switching Characteristic, Inductive Load,** at _T_ j=175 °C |**Parameter**|**Symbol**|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**Typ. **|**max.**|| |**IGBT Characteristic**||||||| |Turn-off delaytime|_t_d(o f f)|_T_j=175°C<br>_V_C C=600V,_I_C=25A,<br>_V_G E= 0 /15V,<br>_R_G= 10Ω,|-|373|-|ns| |Fall time|_t_f||-|90.6|-|| |Turn-on energy|_E_o n||-|-|-|| |Turn-off energy|_E_o ff||-|2.54|-|| |Total switchingenergy|_E_t s||-|2.54|-|mJ| 3 Rev. 2.3 Nov. 09 Power Semiconductors IHW25N120R2 Soft Switching Series **==> picture [220 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 60A T C=80°C<br>T C=110°C<br>40A<br>Ic<br>20A<br>0A<br>10Hz 100Hz 1kHz 10kHz 100kHz<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br> **==> picture [102 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> f , SWITCHING FREQUENCY<br>**----- End of picture text -----**<br> **Figure 1. Collector current as a function of switching frequency for hard switching (turn-off)** **==> picture [217 x 224] intentionally omitted <==** **----- Start of picture text -----**<br> t p=1µs<br>10µs<br>20µs<br>10A<br>50µs<br>1A 500µs<br>5ms<br>DC<br>1V 10V 100V 1000V<br>V CE, COLLECTOR-EMITTER VOLTAGE<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br> **Figure 2. IGBT Safe operating area** ( _D =_ 0, _T_ C = 25°C, _T_ j ≤175°C; _V_ GE=15V) ( _T_ j ≤ 175°C, _D =_ 0.5, _V_ CE = 600V, - _V_ GE = 0/+15V, _R_ G = 10Ω) **==> picture [217 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> 350W<br>300W<br>250W<br>200W<br>150W<br>100W<br>50W<br>0W<br>25°C 50°C 75°C 100°C 125°C 150°C<br>DISSIPATED POWER<br>,<br>tot<br>P<br>**----- End of picture text -----**<br> _T_ C, CASE TEMPERATURE **Figure 3. Power dissipation as a function of case temperature** ( _T_ j ≤ 175°C) **==> picture [215 x 203] intentionally omitted <==** **----- Start of picture text -----**<br> 50A<br>40A<br>30A<br>20A<br>10A<br>0A<br>25°C 50°C 75°C 100°C 125°C 150°C<br>COLLECTOR CURRENT<br>,<br>I C<br>**----- End of picture text -----**<br> _T_ C, CASE TEMPERATURE **Figure 4. DC Collector current as a function of case temperature** ( _V_ GE ≥ 15V, _T_ j ≤ 175°C) Rev. 2.3 Nov. 09 4 Power Semiconductors ## IHW25N120R2 ## Soft Switching Series **==> picture [449 x 519] intentionally omitted <==** **----- Start of picture text -----**<br> 70A 70A<br>60A V GE=20V 60A V GE=20V<br>15V<br>15V<br>50A 50A 13V<br>13V<br>11V<br>11V<br>40A 40A<br>9V<br>9V<br>7V<br>30A 7V 30A<br>20A 20A<br>10A 10A<br>0A 0A<br>0V 1V 2V 0V 1V 2V 3V<br>V CE, COLLECTOR-EMITTER VOLTAGE V CE, COLLECTOR-EMITTER VOLTAGE<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T j = 25°C) ( T j = 175°C)<br>70A<br>2.5V IC =50A<br>60A<br>2.0V<br>50A<br>IC =25A<br>40A 1.5V<br>IC =12.5A<br>30A<br>1.0V<br>20A T J=175°C<br>25°C 0.5V<br>10A<br>0A 0.0V<br>0V 2V 4V 6V 8V 10V 0°C 50°C 100°C 150°C<br>V GE, GATE-EMITTER VOLTAGE T J, JUNCTION TEMPERATURE<br>COLLECTOR CURRENT COLLECTOR CURRENT<br>, ,<br>I C I C<br>EMITT SATURATION VOLTAGE<br>-<br>COLLECTOR CURRENT<br>,<br>I C<br>COLLECTOR<br>CE(sat),<br>V<br>**----- End of picture text -----**<br> **==> picture [184 x 21] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 7. Typical transfer characteristic<br>(VCE=20V)<br>**----- End of picture text -----**<br> **Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature** **==> picture [47 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> ( V GE =15V)<br>**----- End of picture text -----**<br> Rev. 2.3 Nov. 09 5 Power Semiconductors IHW25N120R2 Soft Switching Series **==> picture [216 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>d(off)<br>100ns<br>t f<br>10ns<br>0A 10A 20A 30A 40A 50A 60A 70A<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br> **==> picture [98 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> IC , COLLECTOR CURRENT<br>**----- End of picture text -----**<br> **Figure 9. Typical switching times as a function of collector current** (inductive load, _T_ J=175°C, _V_ CE=600V, VGE=0/15V, _R_ G=10Ω, Dynamic test circuit in Figure E) **==> picture [220 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>d(off)<br>100ns t f<br>10ns<br>25°C 50°C 75°C 100°C 125°C 150°C<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br> ## _T_ J, JUNCTION TEMPERATURE **Figure 11. Typical switching times as a function of junction temperature** (inductive load, _V_ CE=600V, VGE=0/15V, _I_ C=25A, _R_ G=10Ω, Dynamic test circuit in Figure E) **==> picture [221 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> 1000ns t d(off)<br>100ns t f<br>10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω<br>SWITCHING TIMES<br>t,<br>**----- End of picture text -----**<br> ## _R_ G, GATE RESISTOR **Figure 10. Typical switching times as a function of gate resistor** (inductive load, _T_ J=175°C, _V_ CE=600V, VGE=0/15V, _I_ C=25A, Dynamic test circuit in Figure E) **==> picture [218 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> 6V<br>max.<br>5V<br>typ.<br>4V<br>min.<br>3V<br>2V<br>-50°C 0°C 50°C 100°C<br>EMITT TRSHOLD VOLTAGE<br>-<br>GATE<br>) GE(th,<br>V<br>**----- End of picture text -----**<br> **==> picture [112 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> T J, JUNCTION TEMPERATURE<br>**----- End of picture text -----**<br> **Figure 12. Gate-emitter threshold voltage as a function of junction temperature** ( _I_ C = 0.6mA) 6 Rev. 2.3 Nov. 09 Power Semiconductors ## IHW25N120R2 ## Soft Switching Series **==> picture [219 x 200] intentionally omitted <==** **----- Start of picture text -----**<br> 6.0mJ<br>5.0mJ<br>E off<br>4.0mJ<br>3.0mJ<br>2.0mJ<br>1.0mJ<br>0.0mJ<br>0A 10A 20A 30A 40A 50A 60A 70A<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br> ## _IC_ , COLLECTOR CURRENT **Figure 13. Typical turn-off energy as a function of collector current** (inductive load, _T_ J=175°C, _V_ CE=600V, VGE=0/15V, _R_ G=10Ω, Dynamic test circuit in Figure E) **==> picture [222 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 4.0mJ E off<br>3.0mJ<br>2.0mJ<br>1.0mJ<br>0.0mJ<br>10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω 80Ω<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br> ## _R_ G, GATE RESISTOR **Figure 14. Typical turn-off energy as a function of gate resistor** (inductive load, _T_ J=175°C, _V_ CE=600V, VGE=0/15V, _I_ C=25A, Dynamic test circuit in Figure E) **==> picture [222 x 202] intentionally omitted <==** **----- Start of picture text -----**<br> E off<br>2.5mJ<br>2.0mJ<br>1.5mJ<br>1.0mJ<br>0.5mJ<br>0.0mJ<br>25°C 50°C 75°C 100°C 125°C 150°C<br>SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br> ## _T_ J, JUNCTION TEMPERATURE **Figure 15. Typical turn-off energy as a function of junction temperature** (inductive load, _V_ CE=600V, VGE=0/15V, _I_ C=25A, _R_ G=10Ω, Dynamic test circuit in Figure E) **==> picture [201 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5mJ E off<br>2.0mJ<br>1.5mJ<br>1.0mJ<br>0.5mJ<br>0.0mJ<br>600V 650V 700V 750V<br>**----- End of picture text -----**<br> **==> picture [9 x 122] intentionally omitted <==** **----- Start of picture text -----**<br> SWITCHING ENERGY LOSSES<br>,<br>E<br>**----- End of picture text -----**<br> **==> picture [141 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> VCE , COLLECTOR-EMITTER VOLTAGE<br>**----- End of picture text -----**<br> **Figure 16. Typical turn-off energy as a function of collector emitter voltage** (inductive load, _T_ J=175°C, VGE=0/15V, _I_ C=20A, _R_ G=10Ω, Dynamic test circuit in Figure E) Rev. 2.3 Nov. 09 7 Power Semiconductors IHW25N120R2 ## Soft Switching Series **==> picture [217 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> 15V<br>240V<br>960V<br>10V<br>5V<br>0V<br>0nC 25nC 50nC 75nC<br>Q GE, GATE CHARGE<br>EMITTER VOLTAGE<br>-<br>GATE<br>,<br>GE<br>V<br>**----- End of picture text -----**<br> **Figure 17. Typical gate charge** ( _I_ C=25 A) **==> picture [216 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> C iss<br>1nF<br>100pF<br>C oss<br>C rss<br>0V 10V 20V<br>CAPACITANCE<br>c,<br>**----- End of picture text -----**<br> **==> picture [141 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> V CE, COLLECTOR-EMITTER VOLTAGE<br>**----- End of picture text -----**<br> **Figure 18. Typical capacitance as a function of collector-emitter voltage** ( _V_ GE=0V, _f_ = 1 MHz) **==> picture [215 x 223] intentionally omitted <==** **----- Start of picture text -----**<br> D =0.5<br>-1 0.2<br>10 K/W<br>0.1<br>0.05<br>R , ( K / W ) τ , ( s )<br>0.02 0.0183 6.66*10-2<br>0.1313 2.85*10-2<br>10-2K/W 0.01 0.1358 5.49*10-3<br>0.1257 4.51*10-4<br>R 1 R 2<br>single pulse<br>C 1= τ1/ R 1 C 2= τ2/ R 2<br>10-3K/W<br>10µs 100µs 1ms 10ms 100ms<br>t P, PULSE WIDTH<br>TRANSIENT THERMAL RESISTANCE<br>,<br>thJC<br>Z<br>**----- End of picture text -----**<br> **Figure 19. IGBT transient thermal resistance** ( _D = t_ p / _T_ ) **==> picture [218 x 207] intentionally omitted <==** **----- Start of picture text -----**<br> D =0.5<br>-1 0.2<br>10 K/W<br>R , ( K / W ) τ , ( s )<br>-2<br>0.079 7.66*10<br>0.1 0.1708 1.24*10-2<br>0.1263 8.56*10-4<br>0.05 0.035 7.52*10-5<br>0.02 R 1 R 2<br>0.01<br>C 1 = τ1/ R 1 C 2 = τ2/ R 2<br>10-2K/W<br>single pulse<br>10µs 100µs 1ms 10ms 100ms<br>TRANSIENT THERMAL RESISTANCE<br>,<br>thJC<br>Z<br>**----- End of picture text -----**<br> **==> picture [64 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> t P, PULSE WIDTH<br>**----- End of picture text -----**<br> **Figure 20. Diode transient thermal impedance as a function of pulse width** ( _D_ = _t_ P/ _T_ ) 8 Rev. 2.3 Nov. 09 Power Semiconductors Soft Switching Series ## IHW25N120R2 **==> picture [221 x 205] intentionally omitted <==** **----- Start of picture text -----**<br> 45A<br>40A<br>35A<br>30A<br>25A<br>20A TJ =25°C<br>175°C<br>15A<br>10A<br>5A<br>0A<br>0.0V 0.5V 1.0V 1.5V 2.0V<br>FORWARD CURRENT<br>,<br>I F<br>**----- End of picture text -----**<br> **==> picture [92 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> V F, FORWARD VOLTAGE<br>**----- End of picture text -----**<br> **Figure 21. Typical diode forward current as a function of forward voltage** **==> picture [218 x 223] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0V IF =50A<br>25A<br>1.5V<br>12.5A<br>1.0V<br>0.5V<br>0.0V<br>0°C 50°C 100°C 150°C<br>T J, JUNCTION TEMPERATURE<br>FORWARD VOLTAGE<br>,<br>F<br>V<br>**----- End of picture text -----**<br> **Figure 22. Typical diode forward voltage as a function of junction temperature** 9 Rev. 2.3 Nov. 09 Power Semiconductors Soft Switching Series ## IHW25N120R2 **==> picture [55 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> PG-TO247-3<br>**----- End of picture text -----**<br> 10 Rev. 2.3 Nov. 09 Power Semiconductors ## IHW25N120R2 ## Soft Switching Series **==> picture [267 x 267] intentionally omitted <==** **Figure A. Definition of switching times** **==> picture [178 x 308] intentionally omitted <==** **----- Start of picture text -----**<br> i,v<br>di F /dt t r r =t S + t F<br>Q r r =Q S + Q F<br>t<br>r r<br>I F t S t F<br>I Q S Q F 10% I r r m t<br>r r m 90% I di r r /dt V R<br>r r m<br>Figure C. Definition of diodes<br>switching characteristics<br>τ1 τ2 τn<br>r1 r 2 r n<br>Tj (t)<br>p(t) r1 r 2 r n<br>TC<br>**----- End of picture text -----**<br> **Figure D. Thermal equivalent circuit** **Figure B. Definition of switching losses** **Figure E. Dynamic test circuit** 11 Rev. 2.3 Nov. 09 Power Semiconductors IHW25N120R2 Soft Switching Series ## **Edition 2006-01** ## **Published by Infineon Technologies AG 81726 München, Germany** ## **© Infineon Technologies AG 11/19/09. All Rights Reserved.** ## **Attention please!** The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( **www.infineon.com** ). ## **Warnings** Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 12 Rev. 2.3 Nov. 09 Power Semiconductors
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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