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IHW20N120R3FKSA1
IGBT, 40 A, 1.48 V, 310 W, 1.2 kV, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- No. of Pins: 3Pins
- Power Dissipation: 310W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.48V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 1.92 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
# IHW20N120R3 IHW20N120R3 **==> picture [438 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>monolithic body diode with low forward voltage<br>for soft commutation only<br>_ technology applications offers:<br>tight parameter distribution<br>G<br>ruggedness, temperature stable behavior<br>E<br>CEsat<br>parallel switching capability due to positive<br>coefficient in V CEsat<br>EMI oe<br>according to JESD-022 for target applications Gi pp<br>lead plating; ROHS compliant 70.3, f0On<br>product spectrum and PSpice Models:<br>G<br>C<br>E<br>**----- End of picture text -----**<br> ## **Features:** http://www.infineon.com/igbt/ ## **Applications:** |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |IHW20N120R3|1200V|20A|1.48V|175°C|H20R1203|PG-TO247-3| 2 IHW20N120R3 **==> picture [146 x 65] intentionally omitted <==** ## Resonant�Switching�Series ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 3 Rev.�2.6,��2015-01-26 IHW20N120R3 Resonant�Switching�Series **==> picture [146 x 65] intentionally omitted <==** ## **Maximum�Ratings** **For�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emitter voltage|_V_CE||1200|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||40.0<br>20.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||60.0|A| |Turnoffsafeoperatingarea_V_CE≤1200V,_T_vj≤175°C|-||60.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||40.0<br>20.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||60.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,D<0.010)|_V_GE||±20<br>±25|V| |Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||310.0<br>155.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+175||°C| |Soldering temperature,<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| ## **Thermal�Resistance** |**ThermalResistance**|||||| |---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**| |**Characteristic**|||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.48|K/W| |Diode thermal resistance,<br>junction - case|_R_th(j-c)|||0.48|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)|||40|K/W| Rev.�2.6,��2015-01-26 4 IHW20N120R3 **==> picture [146 x 65] intentionally omitted <==** ## Resonant�Switching�Series ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.50mA|1200|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.48<br>1.70<br>1.80|1.70<br>-<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.55<br>1.70<br>1.80|1.75<br>-<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|5.1|5.8|6.4|V| |Zero gate voltage collector current|_I_CES|_V_CE=1200V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|100.0<br>2500.0|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=20.0A|-|18.3|-|S| |Integratedgate resistor|_r_G|||none||Ω| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1503|-|pF| |Output capacitance|_C_oes||-|50|-|| |Reverse transfer capacitance|_C_res||-|42|-|| |Gate charge|_Q_G|_V_CC=960V,_I_C=20.0A,<br>_V_GE=15V|-|211.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-off delaytime|_t_d(off)|_T_vj=25°C,<br>_V_CC=600V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=180nH,_C_σ=39pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|387|-|ns| |Fall time|_t_f||-|25|-|ns| |Turn-off energy|_E_off||-|0.95|-|mJ| Rev.�2.6,��2015-01-26 5 IHW20N120R3 **==> picture [146 x 65] intentionally omitted <==** ## Resonant�Switching�Series ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=175°C**||||||| |Turn-off delaytime|_t_d(off)|_T_vj=175°C,<br>_V_CC=600V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=180nH,_C_σ=39pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|454|-|ns| |Fall time|_t_f||-|84|-|ns| |Turn-off energy|_E_off||-|1.65|-|mJ| 6 Rev.�2.6,��2015-01-26 IHW20N120R3 **==> picture [466 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>rr<br>P| VST OPS TT MIR [rT]<br>60<br>| a SON Se ee<br>: SETI TIEEM TI = ee FPEertis tp=1µs oe ‘ ON<br>= MEE<br>: mo & 10 LOIN 5µs<br>iww TC=80° aN TH) iww poaSf RNa _)SN<br>a 40 TC=110° Wil oe | | 20µs ter A CTP TI<br>2 \ a ee ee eS<br>t TL | | 3 eee 100µs<br>2 li es ee 1ms Sh<br>: TINE & EE 10ms CRSSCT<br>a WT a 1 CST]TIS Lr<br>8 20 Wi 8 Eat DC<br>- E a<br>vAmPAI \ - SS<br>eA TN\\ \ PTPTpTTTTPSSTATT TT RTT TT<br>0 0.1<br>0.01 0.1 1 10 100 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T j 175°C; V GE=15V)<br>( T j ≤ 175°C, D =0.5, V CE =600V, V GE=0/15V,<br>R G=15 Ω )<br>I C I C<br>**----- End of picture text -----**<br> **==> picture [474 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 350<br>300<br>40<br>250 N x<br>= \ NY<br>- iad t<br>fe)PP Ng\ i NEEL\<br>200<br>x . s \<br>2) ad<br>150<br>d \ : ’<br>20<br>= \ ut \<br>100<br>LE ‘ TEEN<br>50<br>LUN TTT<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>P tot I C<br>**----- End of picture text -----**<br> > Figure 3. Power **temperature** ( _T_ j ≤ 175°C) Figure 4. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ j ≤ 175°C) 7 IHW20N120R3 **==> picture [469 x 302] intentionally omitted <==** **----- Start of picture text -----**<br> 60 60<br>VGE=20V VGE=20V<br>50 50<br>17V 17V<br>15V 15V<br>_ 40 13V _ _ 40 13V Hy) /<br>oc 11V sf oc 11V i /<br>9V 9V<br>30 30<br>7V 7V<br>5V 5V<br>Xt<br>20 20<br>Nn e |<br>Oo Oo<br>10 10<br>i Gee <ceee<br>0 0<br>0 1 2 3 0 1 2 3 4<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T j=25°C) ( T j=175°C)<br>I C I C<br>**----- End of picture text -----**<br> **==> picture [474 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>j Peers<br>25°C IC=10A<br>Tj=175°C IC=20A<br>EJ]: ‘ S I IC=40A |(ns rsnsee ee<br>60 S jiu— f e<br>S) a es ee ee ee<br>2.5<br>x 50 x a ee<br>5 = a ee ee ee ee e e ee<br>oY3 40 Lux aa eaeee ee ee ee<br>O = 2.0 a ee ee ee ee<br>30<br>6 a pe | |<br>a O ee ee ee ee ee ee<br>Ss) 20 Wy a ed ee<br>1.5<br>/ 9 a A<br>/ ° a es<br>10<br>ee ee ee ee eee<br>a<br>a<br>0 1.0<br>0 2 4 6 8 10 12 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br> Figure 7. Typical ( _V_ CE=20V) Figure 8. ( _V_ GE=15V) 8 IHW20N120R3 **==> picture [230 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> td(off)<br>tf<br>1000<br>a<br>a<br>a Se<br>a ee<br>ee ee<br>z eeeee<br>a Os<br>Ww<br>a<br>oO<br>Zz<br>5 100 a es<br>E ee<br>= a a<br>ao a rs<br>ee ee ee ee<br>10<br>0 10 20 30 40<br>I C , COLLECTOR CURRENT [A]<br>t<br>**----- End of picture text -----**<br> Figure 9. **==> picture [175 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> (ind. load, T j =175°C, V CE =600V, V GE=0/15V,<br>R G(on)=15 ; R G(off)=15 Ω , test circuit in Fig. E)<br>**----- End of picture text -----**<br> **==> picture [230 x 309] intentionally omitted <==** **----- Start of picture text -----**<br> td(off)<br>tf<br>1000<br>a<br>ee<br>a se<br>re ee ee eee<br>rr a ee ee<br>Pom<br>OO<br>Ww<br>oO<br>Zz<br>5 100 a<br>[_<br>aS<br>ee es es<br>ee eeee<br>10<br>10 20 30 40 50<br>R G , GATE RESISTANCE [ Ω ]<br>Figure 10. Typical switching times as a function of<br>resistance<br>(ind. load, T j =175°C, V CE =600V, V GE=0/15V,<br>I C =20A, test circuit in Fig. E)<br>t<br>**----- End of picture text -----**<br> **==> picture [489 x 274] intentionally omitted <==** **----- Start of picture text -----**<br> td(off) typ.<br>1000 tf min.<br>aeESqe. eeese Ww 7 fe max. )<br>a a © )<br>S aeeS E EL<br>eee ee 6 L<br>><br>< a -.<br>v7 Py e e ee<br>Pog 5 p<br>WwSo 100 SS]A Tr6 ~~ 7. >be ———_——<br>- a se ed es ee ee Lu ys<br>5> aseaaee ee ee ee ee x 4 tee = ™ J<br>= poje-v | fT | mee<br>Se=ee = 3 ~<br>° 10 a a ee ee uw<br>——aee ee ee ee ee eee en b 2<br>a6<br>a a©)<br>1<br>PEPEEE EP<br>1 0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 11. Figure 12. **==> picture [166 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> (ind. load, V CE =600V, V GE =0/15V, I C=20A,<br>R G(on)=15 ; R G(off)=15 Ω , test circuit in Fig.<br>**----- End of picture text -----**<br> ( _I_ C=0.5mA) 9 IHW20N120R3 **==> picture [471 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>3 Eoff Eoff<br>a ee A<br>ee ee ee ee<br>a<br>33<br>DD 2<br>2<br>eeeo |ee| | Yl | g oe<br>Oo | | YY | +} g<br>Ts<br>a ee<br>z | | 7 | | | 2<br>1<br>5 1 | |f7 | | 4}<br>FE6 |[yyfi) |||}||<br>a 2 ee ee<br>0 es ee ee ee 0<br>0 10 20 30 40 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]<br>E E<br>**----- End of picture text -----**<br> Figure 13. (ind. load, _T_ j =175°C, _V_ CE =600V, _V_ GE=0/15V, _R_ G(on) =15, _R_ G(off)=15 Ω , test circuit in Fig. E) Figure 14. (ind. load, _T_ j =175°C, _V_ CE =600V, _V_ GE=15/0V, test circuit in Fig. E) **==> picture [249 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>Eoff<br>yy<br>ee ee ee ee ee<br>ee eeeeee<br>a a e e<br>e a ee<br>on |. | | | 2-7 |<br>WW a eeee ee<br>% a ee ee ee<br>= po |<br>0 Pe<br>Ooraor 1 cePoe eeee|ee<br>ee<br>Zz cy<br>5 ee;<br>= a a ee ee ee ee =<br>a aee ee<br>ee<br>ee eeeeee<br>a a ee ee ee ee<br>ee<br>0 ee ee e e<br>25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C]<br>E E<br>**----- End of picture text -----**<br> **==> picture [235 x 275] intentionally omitted <==** **----- Start of picture text -----**<br> 2.2<br>Eoff<br>2.0<br>Gg<br>ee<br>1.8<br>1.6<br>=<br>ee<br>1.4<br>1.2<br>400 500 600 700 800 900 1000<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E<br>**----- End of picture text -----**<br> Figure 15. Typical switching energy losses as a function of junction temperature (ind load, _V_ CE =600V, _V_ GE =0/15V, _I_ C=20A, _R_ G(on)=15 ; _R_ G(off)=15 Ω , test circuit in Fig. **==> picture [206 x 38] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 16. Typical switching energy losses as a<br>function of collector emitter voltage<br>(ind. load, T j =175°C, V GE =150/V, I C=20A,<br>R G(on)=15 ; R G(off)=15 Ω , test circuit in Fig.<br>**----- End of picture text -----**<br> 10 IHW20N120R3 **==> picture [471 x 312] intentionally omitted <==** **----- Start of picture text -----**<br> 15.0<br>240V<br>960V<br>12.5 / |; a<br>s<br>= ar. / 1000 = |<br>Cies<br>< 10.0 4 L aCs Coes —7<br>Cres<br>B | | | lA , 2 a |<br>S / WW e e<br>et 7.5 " S f<br>a SS<br>100<br>Lu<x= 5.0 FEEEELL EL oOa- a a |; a<br>- a ee ee<br>ae eee<br>2.5 ee ee<br>0.0 10<br>0 40 80 120 160 200 0 10 20 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of<br>( I C=20A) collector-emitter voltage<br>( V GE =0V, f=1MHZz)<br>C<br>GE<br>V<br>**----- End of picture text -----**<br> **==> picture [475 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 1 1<br>a =eeet<br>PT ee ee i PT Ee ee<br>ro ro<br>= | FC<br>6 a a ee eee ee = eee ee<br>Copa<br>D=0.5 D=0.5<br>rm— Z 4 —8 COEoT SaeT)<br>0.2 0.2<br>gL Hin set HUTT rm SSEHUIISBniiiemae ate UTI<br>LUee 0.1 eresyaul I 0.1 S|= 0.1 UINNIeeLeeATL 0.1 (|<br>C ee J eee Pot LU et eee |<br>0.05 0.05<br>= AEey eer Trnn = Seeesmeee 7aee eet oA|el<br>0.02 0.02<br>7 Hn. TT 7 i Ae. CCI<br>< PN A ee Wi ET) = Ty a TTT<br>aa ZaoAS 0.01 0.01<br>single pulse single pulse<br>us aT Coe PP, if > =<br>-<br>- ante ul at ee<br>Se ANN) ANN =a EN<br>Z— 0.01 Ly0Sp| i | e s Z— 0.01 Ln<br>D)Zz ose ee 0Se| se| aheee||<br>is Ce | Re iy Z ee Re Mil<br>fe MYAA ~~ (OMiois MOY6| -- Ii l l l]<br>: A || MT TIM TTI | csc eves cotter I<br>A OT rT EE TTT | LOOCT<br>i: 1 2 3 4 5 6 i: 1 2 3 4 5 6<br>ri[K/W]: 9.8E-3 0.01407993 0.0698 0.1158 0.1569 0.1137 ri[K/W]: 9.8E-3 0.0141 0.0698 0.1158 0.1569 0.1137<br>τ i[s]: 2.8E-5 4.7E-5 2.0E-4 1.2E-3 9.9E-3 0.08835259 τ i[s]: 2.8E-5 4.7E-5 2.0E-4 1.2E-3 9.9E-3 0.08835259<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br> > Figure 19. IGBT ( _D_ = _t_ p/T) Figure 20. Diode function ( _D_ = _t_ p/T) 11 IHW20N120R3 **==> picture [490 x 276] intentionally omitted <==** **----- Start of picture text -----**<br> 40 3<br>Tj=25°C IF=10A<br>Tj=175°C IF=20A<br>IF=40A<br>30<br>kK LW 2<br>Zz Oo<br>im <x<br>E 3<br>3B ><br>20<br>0 xQ<br>= <x<br>%j ©PET<br>1<br>10<br>0 0<br>0 1 2 3 0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br> Figure 21. Typical diode forward current as a function Figure 22. 12 IHW20N120R3 Resonant�Switching�Series **==> picture [146 x 65] intentionally omitted <==** ## PG-TO247-3 13 Rev.�2.6,��2015-01-26 IHW20N120R3 **==> picture [146 x 65] intentionally omitted <==** ## Resonant�Switching�Series **==> picture [481 x 318] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>GE (t)<br>**----- End of picture text -----**<br> **==> picture [252 x 287] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> Figure D. **==> picture [102 x 46] intentionally omitted <==** CC Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 14 Rev.�2.6,��2015-01-26 IHW20N120R3 **==> picture [146 x 65] intentionally omitted <==** ## Resonant Switching Series ## Revision History IHW20N120R3 Revision: 2015-01-26, Rev. 2.6 |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects(major changes since last revision)| |1.1|2008-05-06|-| |1.2|2008-07-11|-| |2.3|2008-07-29|-| |2.4|2009-04-01|-| |2.5|2013-02-12|Layout change| |2.6|2015-01-26|Minor changes| ## We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2015 Infineon Technologies AG All Rights Reserved. ## Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). ## Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.6, 2015-01-26 15
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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