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IGP20N60H3XKSA1
IGBT, 40 A, 1.95 V, 170 W, 600 V, TO-220, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- Available until stocks are exhausted
- MSL: -
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 170W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-220
- Operating Temperature Max: 175°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.95V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 0.733 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## IGBT
IGP20N60H3
IGP20N60H3
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Features: C<br>TRENCHSTOP [TM] technology offering<br>¢ very low turn-off energy<br>low V CEsat<br>* low EMI<br>* maximum junction temperature 175°C G<br>* qualified according to JEDEC for target applications E<br>¢ Pb-free lead plating, halogen-free mould compound, RoHS<br>compliant<br>C<br>* complete product spectrum and PSpice Models: :<br>http://www.infineon.com/igbt/ , ‘dj<br>Applications:<br>* uninterruptible power supplies Fj Pa<br>* welding converters Gf<br>* converters with high switching frequency f ff<br>G<br>C<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|IGP20N60H3|600V|20A|1.95V|175°C|G20H603|PG-TO220-3|
2
IGP20N60H3
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## High�speed�switching�series�third�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
3
Rev.�2.2,��2014-03-11
IGP20N60H3
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## High�speed�switching�series�third�generation
## **Maximum�ratings**
|**Maximumratings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||40.0<br>20.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||80.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||80.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||170.0<br>85.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>wave soldering1.6 mm(0.063 in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**||||||
|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**|**Max.Value**||**Unit**|
|**Characteristic**||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)|||0.88|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)|||62|K/W|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=2.00mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.95<br>2.30<br>2.50|2.40<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.29mA,_V_CE=_V_GE|4.1|5.1|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>-|40.0<br>1500.0|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=20.0A|-|10.9|-|S|
Rev.�2.2,��2014-03-11
4
IGP20N60H3
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## High�speed�switching�series�third�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1100|-|pF|
|Output capacitance|_C_oes||-|70|-||
|Reverse transfer capacitance|_C_res||-|32|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=20.0A,<br>_V_GE=15V|-|120.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|120|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=14.6Ω,_L_σ=75nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode (IKP20N60H3) reverse<br>recovery.|-|16|-|ns|
|Rise time|_t_r||-|20|-|ns|
|Turn-off delaytime|_t_d(off)||-|194|-|ns|
|Fall time|_t_f||-|11|-|ns|
|Turn-on energy|_E_on||-|0.45|-|mJ|
|Turn-off energy|_E_off||-|0.24|-|mJ|
|Total switchingenergy|_E_ts||-|0.69|-|mJ|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_r_G=14.6Ω,_L_σ=75nH,<br>_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode (IKP20N60H3) reverse<br>recovery.|-|16|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|227|-|ns|
|Fall time|_t_f||-|14|-|ns|
|Turn-on energy|_E_on||-|0.60|-|mJ|
|Turn-off energy|_E_off||-|0.36|-|mJ|
|Total switchingenergy|_E_ts||-|0.96|-|mJ|
Rev.�2.2,��2014-03-11
5
High speed switching series third generation IGP20N60H3
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60 100<br>XN po NN eS TT<br>50 TINIEST<br>\. CT = ESP Spear<br>PI N E ae tp=1µs NS et el<br>| NU Nee eC ae Alli<br>ST b 40 - Xx NUIIKOIN SIIIN LEM E= 10 10µs TNTWeirs<br>6 | UWE<br>\ aati<br>oe WCAC) € = 50µs Sesn TTT<br>ra al \ DN oe a a ee ON EE<br>Ss TC=80° x \ y 5 lz 0 ee ee<br>a 30 Pomc IMI) ¢ Rott 100µs eaeeSe se<br>AN<br>GS]i eT TC=110° Sie = ani 4 HT) & © aFE 200µs |NSS<br>ie TC=80° Patil GHTIL rn (a ‘<br>500µs<br>= 20 eee TC=110° Hi ret Sh| = 1 DC |CoML\<br>‘ NaN > — a<br>©- TMI TIMES NN © EBS [SSS] sees<br>yp vO \ \ a a ee<br>10 AE ALLE OR ANN a |<br>PSS 0<br>aI : aX ell<br>ren e COMM TT | |TV<br>0 0.1<br>VV EE<br>1 10 100 1000 1 10 100 1000<br>f , SWITCHING FREQUENCY [kHz] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area<br>frequency ( D =0, T C =25°C, T j 175°C; V GE=15V)<br>( T j ≤ 175°C, D =0.5, V CE =400V, V GE=15/0V,<br>r G=14,6 Ω )<br>180 40<br>Ket<br>160<br>35<br>T EP A<br>140<br>30<br>120<br>25<br>Kk TY ,<br>eLTXTT< 100 \ kKE<br>ee eee:<br>2) ao 20<br>Q O<br>80<br>15<br>5 WwW5 \<br>60<br>10<br>40<br>"PTT PRET EPP EA<br>5<br>20<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>I C I C<br>P tot I C<br>**----- End of picture text -----**<br>
> Figure 3. Power **temperature** ( _T_ j ≤ 175°C)
Figure 4. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ j ≤ 175°C)
6
IGP20N60H3 High speed switching series third generation
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80 80<br>70 VGE=20V 70 VGE=20V<br>Wy a / adBae?fl |<br>17V 17V<br>60 60<br>15V | 15V Ul |<br>13V 13V<br>50 50<br>a 11V a 11V<br>9V 9V<br>40 40<br>SHE de LR<br>7V 7V<br>EL 30 5V ANE 30 Lee 5V<br>as Naa<br>20 20<br>><br>10 10<br>F R PARE<br>pA S S OLA<br>0 0<br>0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 8<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 5. Typical output characteristic Figure 6. Typical output characteristic<br>( T j=25°C) ( T j=175°C)<br>70 4.0<br>Tj=25°C IC=10A<br>Tj=175°C IC=20A<br>IC=40A<br>60 EJ))) ye. 6] iv<br>3.5<br>-<br>I E<br>50<br>, [V e er<br>3.0<br>40<br>ao / = 2.5 7<br>30<br>S /,eV ° 2.0 he<br>; 20 fo)<br>oY) Pe 1.5<br>10<br>0 1.0<br>5 IVT 6 7 8 9 TT 10 11 } 12 0 LETT 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>I C I C<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
( _V_ GE=15V)
7
~~High speed switching series third generation~~ IGP20N60H3
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**----- Start of picture text -----**<br>
1000<br>| of | | UT a r| a td(off) ee a ee<br>tf<br>| | | | fon td(on) FS<br>Pot tr ee<br>i I p oe<br>j td(off) e t || o e<br>tf + | | | pee tt<br>td(on)<br>Z tr Efi4 |<br>= 100 p o =<br>9 og<br>oO [oop] oO 100<br>Z a eeee ee<br>6 for. |) | | | GB<br>PE PREP) & Ee<br>= . = ee ee ee ee ee<br>a<br>PSN er} Pe<br>J e e<br>10 a ~ 10 L ee<br>0 5 10 15 20 25 30 35 40 5 10 15 20 25 30 35 40 45 50<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of<br>collector current resistor<br>(ind. load, T j =175°C, V CE =400V, V GE=15/0V, (ind. load, T j =175°C, V CE =400V, V GE=15/0V,<br>r G=14,6 , test circuit in Fig. E) I C =20A, test circuit in Fig. E)<br>6.0<br>typ.<br>min.<br>ee 5.5 max.<br>Zz ee ee ee<br>Oo<br>100 e ttd(off)f Ssv es EWw< 5.0 — RE ss,<br>— tt td(on) a aee O> NN<br>tr<br>Be P N<br>o SSS a es 5 4.5 ~<br>oc ~ -<br>4.0<br>| 10 S a eeeyss ) Ee 3.5 | SS*<br>a ~<br>- a “ae<br>a N<br>po 3.0 a<br>2.5<br>1 2.0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>Figure 11. Typical switching times as a function of Figure 12. Gate-emitter threshold voltage as a<br>junction temperature of junction temperature<br>(ind. load, V CE =400V, V GE =15/0V, I C=20A, ( I C=0.29mA)<br>r G=14,6 , test circuit in Fig. E)<br>t t<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
8
IGP20N60H3
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**----- Start of picture text -----**<br>
2.5 2.00<br>Eoff Eoff<br>Eon Eon<br>Ets 1.75 Ets<br>2.0<br>1.50<br>Ww Ww<br>7) 7)<br>o o<br>@) 4 @) 1.25<br>_ 1.5 é aa) oe<br>O 7 O a oT<br>w , ¢ ag a Daa<br>Ww / ’ Ww 1.00 2 =<br>Zz a y Z wo Uee<br>1.0<br>x e “ x 0.75 wie 7 |<br>0.50<br>0.5<br>0.25<br>; EET TT EberTT tt<br>0.0 0.00<br>4 8 12 16 20 24 28 32 36 40 5 10 15 20 25 30 35 40 45 50<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(ind. load, T j =175°C, V CE =400V, V GE=15/0V, (ind. load, T j =175°C, V CE =400V, V GE=15/0V,<br>r G=14,6 , test circuit in Fig. E) I C =20A, test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
1.0 1.50<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>1.25<br>oe 0.8 e re<br>pole d g :<br>Ww uw a<br>ep)7) 7)ep) 1.00 ? “<br>ef—! 0.6 | | —!<br>O O<br>waPB fee ] a8 ,<br>im wi 0.75 7<br>Z Z a<br>pov | s “ -<br>0.4<br>0.50<br>eee: =<br>pe Ta foe<br>ee 0.2<br>0.25<br>0.0 0.00<br>25 50 75 100 125 150 175 200 250 300 350 400 450<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical switching energy losses as a Figure 16. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(ind load, V CE =400V, V GE =15/0V, I C=20A, (ind. load, T j =175°C, V GE =15/0V, I C=20A,<br>r G=14,6 , test circuit in Fig. E) r G=14,6 , test circuit in Fig. E)<br>E E<br>**----- End of picture text -----**<br>
9
IGP20N60H3
**==> picture [471 x 275] intentionally omitted <==**
**----- Start of picture text -----**<br>
16<br>120V<br>480V<br>14<br>7/ 1000 a a<br>12<br>Ww fo Ce ee Cies az<br>) J _ a Coes ||<br>Cres<br>i 10 / ra Fs i |<br>eee Ww<br>ui 8 Pt 2 x a —eee eee<br>100<br>in & pd<br>uw 6 Oo po SE<br>E . a<br><x po<br>4<br>2<br>0 10<br>0 20 40 60 80 100 120 140 0 10 20 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 17. Typical ( _I_ C=20A)
Figure 18.
( _V_ GE
**==> picture [471 x 275] intentionally omitted <==**
**----- Start of picture text -----**<br>
300 15<br>ee eee<br>: {tii<br>250 12<br>fiia | | ya ti ee<br>3 F= ~~IN<br>Bite EN<br>200 9<br>5Ww / i ™ ~<br>Pt tiie ye LEE ENE<br>C E<br>e tities EEE EEN<br>150 6<br>esO {4 °Kb N<br>G ZL o ><br>E/§<br>100 3<br>“tttVA EEE EEE LEEEEE EE<br>40 eee<br>50 0<br>10 12 14 16 18 20 10 11 12 13 14 15<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>I C(SC) t SC<br>**----- End of picture text -----**<br>
Figure 19.
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**----- Start of picture text -----**<br>
( V CE 400V, start at T j=25°C)<br>**----- End of picture text -----**<br>
Figure 20. Short circuit withstand time gate-emitter voltage ( _V_ CE 400V, start at _T_ j 150°C)
10
IGP20N60H3 High speed switching series third generation
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**----- Start of picture text -----**<br>
1<br>TT<br>_ A<br>S TT AS<br>D=0.5<br>y ST ge<br>geZWW 0.1 LOUPe eeWTEE 0.20.10.05<br>= ed dealer ee ee<br>0.02<br>= na<br>=z et eee Secmatill 1II<br>a ee 0.01<br>single pulse<br>us il<br>aa<br>0.01<br>B eana a<br>Z 0 Re Tn<br>< CA on] -- 1<br>& PANT TT TTT IMI<br>- ST OT TT eres cael<br>i: 1 2 3 4<br>ri[K/W]: 0.07041042 0.3070851 0.3198984 0.1871538<br>a τ i[s]: 9.6E-5 6.8E-4 0.01084623 0.06925485 [|]<br>0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p ,PULSE WIDTH [s]<br>Figure 21. IGBT transient thermal impedance<br>( D = t p/T)<br>thJC<br>Z<br>**----- End of picture text -----**<br>
11
IGP20N60H3
**==> picture [146 x 65] intentionally omitted <==**
High�speed�switching�series�third�generation
## PG-TO220-3
12
Rev.�2.2,��2014-03-11
IGP20N60H3
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## High�speed�switching�series�third�generation
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**----- Start of picture text -----**<br>
v GE (t)<br>90% V GE<br>t<br>i C (t)<br>90% I C 90% I C<br>10% I C 10% I C t<br>v CE (t)<br>t<br>t d(off) t f t d(on) t r<br>v GE (t)<br>90% V GE<br>10% V GE t<br>i C (t)<br>2% I C t<br>v CE (t)<br>2% V CE t<br>t 1 t 2 t 3 t 4<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
a b<br>a b<br>**----- End of picture text -----**<br>
t
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13
Rev.�2.2,��2014-03-11
IGP20N60H3
## IGP20N60H3
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|1.1|2010-02-01|-|
|1.2|2010-07-26|Preliminarydatasheet|
|2.1|2013-12-09|New value IRmax limit at 175°C|
|2.2|2014-03-11|Max ratings Vce, Tvj ≥25°C|
## **Information**
## **Warnings**
endangered.
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Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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