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GH50H65DRB2-7AG
AUTOMOTIVE-GRADE POWER MOSFET
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: STMICROELECTRONICS
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.19 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**GH50H65DRB2-7AG** Datasheet **==> picture [62 x 34] intentionally omitted <==** Automotive-grade trench gate field-stop 650 V, 50 A high-speed HB2 series IGBT featuring freewheeling diode in an H²PAK-7 package ## **Features** **==> picture [63 x 57] intentionally omitted <==** **----- Start of picture text -----**<br> TAB<br>7<br>1<br>**----- End of picture text -----**<br> - AEC-Q101 qualified - Maximum junction temperature: TJ = 175 °C - High speed switching series **==> picture [34 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> H [2] PAK-7<br>**----- End of picture text -----**<br> - Minimized tail current - Low VCE(sat) = 1.6 V (typ.) @ IC = 50 A - Tight parameter distribution **==> picture [142 x 145] intentionally omitted <==** **----- Start of picture text -----**<br> C(TAB)<br>G(1)<br>K(2)<br>E(3, 4, 5, 6, 7)<br>IGBTG1K2E34567CTAB<br>**----- End of picture text -----**<br> - Low thermal resistance - Positive VCE(sat) temperature coefficient - Co-packed with high ruggedness rectifier diode - Excellent switching performance thanks to the extra driving kelvin pin ## **Application** - On board charger (OBC) - PFC converter - single phase input ## **Description** The newest IGBT 650 HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. **==> picture [159 x 35] intentionally omitted <==** **----- Start of picture text -----**<br> Product status link<br>GH50H65DRB2-7AG<br>**----- End of picture text -----**<br> ## **Product summary** |**Product summary**|**Product summary**| |---|---| |**Order code**<br>GH|50H65DRB2-7AG| |**Marking**|G50H65RB2A| |**Package**|H²PAK-7| |**Packing**|Tape and reel| **DS14757** - **Rev 3** - **May 2025** For further information, contact your local STMicroelectronics sales office. www.st.com **GH50H65DRB2-7AG Electrical ratings** ## **1 Electrical ratings** **Table 1. Absolute maximum ratings** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |VCES|Collector-emitter voltage (VGE= 0 V)|650|V| |IC|Continuous collector current at TC= 25 °C|108(1)|A| ||Continuous collector current at TC= 100 °C|68|| |ICP(2)|Pulsed collector current (tp≤ 1 μs, TJ< 175 °C)|200|A| |VGE|Gate-emitter voltage|±20|V| ||Transient gate-emitter voltage (tp≤ 10 μs)|±30|| |IF|Continuous forward current at TC= 25 °C|50(1)|A| ||Continuous forward current at TC= 100 °C|30|| |IFP(2)|Pulsed forward current|120|A| |PTOT|Total power dissipation at TC= 25 °C|385|W| |TSTG|Storage temperature range|-55 to 150|°C| |TJ|Operating junction temperature range|-55 to 175|°C| _1. Limited by package._ _2. Defined by RthJC and limited by maximum junction temperature, not tested in production._ ## **Table 2. Thermal data** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |RthJC|Thermal resistance, junction-to-case, IGBT|0.39|°C/W| ||Thermal resistance, junction-to-case, diode|0.75|| |RthJA|Thermal resistance, junction-to-ambient|50|°C/W| **DS14757** - **Rev 3** **page 2/15** **GH50H65DRB2-7AG Electrical characteristics** ## **2 Electrical characteristics** TJ = 25 °C unless otherwise specified. **Table 3. Static characteristics** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |V(BR)CES|Collector-emitter breakdown<br>voltage|VGE= 0 V, IC= 1 mA|650|||V| |VCE(sat)|Collector-emitter saturation<br>voltage|VGE= 15 V, IC= 50 A||1.6|2.0|V| |||VGE= 15 V, IC= 50 A, TJ= 125 °C||1.8||| |||VGE= 15 V, IC= 50 A, TJ= 175 °C||1.9||| |VF|Forward on-voltage|IF= 30 A||1.05||V| |||IF= 30 A, TJ= 175 °C||0.93||| |VGE(th)|Gate threshold voltage|VCE= VGE, IC= 1 mA|5|6|7|V| |ICES|Collector cut-off current|VGE= 0 V, VCE= 650 V|||25|µA| |IGES|Gate-emitter leakage current|VCE= 0 V, VGE= ±20 V|||±100|nA| **Table 4. Dynamic characteristics** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |Cies|Input capacitance|VCE= 25 V, f = 1 MHz, VGE= 0 V|-|2918|-|pF| |Coes|Output capacitance||-|129|-|pF| |Cres|Reverse transfer capacitance||-|75|-|pF| |Qg|Total gate charge|VCC= 520 V, IC= 50 A, VGE= 0 to 15 V<br>(seeFigure 22. Gate charge test circuit)|-|152|-|nC| |Qge|Gate-emitter charge||-|21|-|nC| |Qgc|Gate-collector charge||-|70|-|nC| **DS14757** - **Rev 3** **page 3/15** **GH50H65DRB2-7AG Electrical characteristics** **Table 5. IGBT switching characteristics (inductive load)** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |td(off)|Turn-off delay time|VCE= 400 V, IC= 50 A, VGE= 15 V,<br>RG= 4.7 Ω (seeFigure 21. Test circuit for<br>inductive load switching)|-|117|-|ns| |tf|Current fall time||-|30|-|ns| |Eoff(1)|Turn-off switching energy||-|557|-|μJ| |td(off)|Turn-off delay time|VCE= 400 V, IC= 50 A, VGE= 15 V,<br>RG= 4.7 Ω, TJ= 175 °C (seeFigure 21. Test<br>circuit for inductive load switching)|-|138|-|ns| |tf|Current fall time||-|73|-|ns| |Eoff(1)|Turn-off switching energy||-|964|-|μJ| _1. Including the tail of the collector current._ **Table 6. Diode switching characteristics (inductive load)** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |trr|Reverse recovery time|IF= 30 A, VR= 400 V, VGE= 15 V,<br>di/dt = 200 A/µs(1)(seeFigure 21. Test circuit<br>for inductive load switching)|-|912|-|ns| |Qrr|Reverse recovery charge||-|23|-|nC| |Irrm|Reverse recovery current||<br>-|53.6|-|A| |dIrr/dt|Peak rate of fall of reverse<br>recovery current during tb||<br>-|71|-|A/µs| |Err|Reverse recovery energy||-|2.6|-|µJ| |trr|Reverse recovery time|IF= 30 A, VR= 400 V, VGE= 15 V,<br>di/dt = 200 A/µs(1), TJ= 175 °C<br>(seeFigure 21. Test circuit for inductive load<br>switching)|-|1016|-|ns| |Qrr|Reverse recovery charge||-|69|-|nC| |Irrm|Reverse recovery current||-|57|-|A| |dIrr/dt|Peak rate of fall of reverse<br>recovery current during tb||-|69|-|A/µs| |Err|Reverse recovery energy||-|3.1|-|µJ| _1. Maximum recommended value_ **DS14757** - **Rev 3** **page 4/15** **GH50H65DRB2-7AG Electrical characteristics** ## **2.1 Electrical characteristics (curves)** **==> picture [513 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 1. Total power dissipation vs temperature Figure 2. Collector current vs temperature<br>PTOT GPDP150720241557PDT IC GPDP150720241603CCT<br>(W) (A)<br>360<br>100<br>300<br>80<br>240<br>60<br>180<br>40<br>120<br>VGE ≥ 15 V, TJ ≤ 175 °C 20 VGE ≥ 15 V, TJ ≤ 175 °C<br>60<br>0 0<br>-75 -25 25 75 125 175 TC (° C) -75 -25 25 75 125 175 TC (° C)<br>**----- End of picture text -----**<br> **==> picture [513 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 3. Typical output characteristics (TJ = 25 °C) Figure 4. Typical output characteristics (TJ = 175 °C)<br>IC GPDP080820241103OC25 IC GPDP080820241103OC175<br> (A) VGE= 12,13,14,15 V (A)<br>180 180 VGE= 12,13,14,15 V 11 V<br>11 V<br>160 10 V 160<br>140 140<br>10 V<br>120 120<br>100 100<br>80 9 V 80 9 V<br>60 60<br>40 40 8 V<br>8 V<br>20 20<br>7 V<br>0 0<br>0 1 2 3 4 VCE (V) 0 1 2 3 4 VCE (V)<br>**----- End of picture text -----**<br> **==> picture [513 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 5. Typical transfer characteristics Figure 6. Typical VCE(sat) vs temperature<br>IC GPDP080820241105TCH VCE(sat) GPDP150720241635VCET<br> (A) VCE= 5 V (V)<br>180 3.5 VGE = 15 V IC = 150 A<br>160 TJ= 25 °C<br>3.0<br>140 IC = 100 A<br>TJ= 175 °C<br>120 2.5<br>100 2.0 IC = 50 A<br>80<br>1.5<br>60<br>1.0 IC = 25 A<br>40<br>20 0.5<br>0 0.0<br>3 5 7 9 11 13 VGE (V) -75 -25 25 75 125 175 TJ (°C)<br>**----- End of picture text -----**<br> **DS14757** - **Rev 3** **page 5/15** **GH50H65DRB2-7AG Electrical characteristics** **==> picture [513 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 7. Typical VCE(sat) vs collector current Figure 8. Forward bias safe operating area<br>VCE(sat) GPDP080820241104VCEC IC GPDP150720241651FSOA<br>(V) (A)<br>3.2 VGE= 15 V<br>2.8<br>2.4 TJ= 25 °C 10 [2 ]<br>2.0 TJ= 175 °C<br>1.6 TJ= -55 °C<br>1.2 10 [1 ]<br>0.8<br>T C = 25 °C<br>0.4 T J ≤ 175 °C, V GE = 15 V<br>0.0 10 [0 ] tp = 1 µs<br>0 20 40 60 80 100 120 140 IC (A) 10 [0 ] 10 [1 ] 10 [2 ] VCE (V)<br>**----- End of picture text -----**<br> **==> picture [513 x 411] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 9. Diode typical forward characteristics Figure 10. Normalized gate threshold vs temperature<br>VF GPDP090820240901DVF VGE(th) GPDP150720241700NVGE<br> (V) (Norm.)<br>VCE = VGE , IC = 1mA<br>2.0 1.2<br>TJ= -55 °C<br>1.5 1.0<br>TJ= 25 °C<br>1.0 0.8<br>TJ= 175 °C<br>0.5 0.6<br>0.0 0.4<br>0 20 40 60 80 100 IF (A) -75 -25 25 75 125 175 TJ (°C)<br>Figure 11. Typical capacitance characteristics Figure 12. Typical gate charge characteristics<br>C GPDP080820241110CVR VGE GADG150720241713GCGE<br>(pF) (V) VCC = 520 V, IC = 50 A, IG = 8 mA<br>10 [4] 20<br>Cies<br>10 [3] 15<br>10 [2] 10<br>Coes<br>f = 1 MHz Cres<br>10 [1] 5<br>10 [0] 0<br>10 [-1] 100 10 [1] 10 [2] VCE (V) 0 40 80 120 160 200 Qg (nC)<br>**----- End of picture text -----**<br> **DS14757** - **Rev 3** **page 6/15** **GH50H65DRB2-7AG Electrical characteristics** **==> picture [513 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 13. Typical switching energy vs collector current Figure 14. Typical switching energy vs temperature<br>E GPDP080820241111SLC E GPDP080820241117SLT<br>(mJ) VCC = 400 V 4.7 (mJ) VCC = 400 V, IC = 50 A, RG = 4.7 Ω,<br>VGE = 15 V<br>2.0<br>0.8<br>1.6<br>Eoff<br>0.6<br>1.2 Eoff<br>0.4<br>0.8<br>0.2<br>0.4<br>0.0 0.0<br>0 20 40 60 80 100 IC (A) 0 50 100 150 TJ (°C)<br>**----- End of picture text -----**<br> **==> picture [513 x 411] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 15. Typical switching energy vs supply voltage Figure 16. Typical switching energy vs gate resistance<br>E GPDP080820241118SLV E GPDP080820241118SLG<br>(mJ) IC = 50 A, RG = 4.7 Ω, VGE = 15 V (mJ) VCC = 400 V, VGE = 15 V,<br>TJ = 175 ℃ IC = 50 A, TJ = 175 °C<br>1.2<br>1.2<br>1.0 Eoff<br>Eoff<br>0.8<br>0.8<br>0.6<br>0.4<br>0.4<br>0.2<br>0.0 0.0<br>100 200 300 400 500 VCE (V) 0 10 20 30 40 RG (Ω)<br>Figure 17. Typical switching times vs collector current Figure 18. Typical switching times vs gate resistance<br>t GPDP090820241010STC t GPDP090820240900STR<br>(ns) (ns)<br>4.7 5<br>td(off)<br>td(off)<br>10 [2]<br>t f 10 [2]<br>10 [1]<br>tf<br>10 [0] 10 [1]<br>0 20 40 60 80 100 IC (A) 0 10 20 30 40 RG (Ω)<br>**----- End of picture text -----**<br> **DS14757** - **Rev 3** **page 7/15** **GH50H65DRB2-7AG Electrical characteristics** **Figure 19. IGBT maximum transient thermal impedance** **Figure 20. Diode maximum transient thermal impedance** **==> picture [439 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> ZthJC GPDP080820241120ZTH_IGBT ZthJC GPDP080820241127ZTH_diode<br>(°C/W) (°C/W) 4<br>enPo| SES,Prepo duty=0.5 Ynig TeTEager<br>ie duty=0.5 Sell OB<br>Lgeeeert eee LUN TTT SerueentiieceAMIN MON<br>10 [-1] Ill 10 [-1]<br>SerrPe maMDO: Sep: anu 4 Ih lotCOBAINLyTIMI\ A<br>0.05 3<br>| 0.1ARTISRe NSS 3 oo eaeNtSta HertStaraCHT<br>0.05 HT Sn PO. Cir eT a 2<br>OeSTRiii 2 A LYST AT LETT ET<br>10 [-2] EAHi Sin tnNH gle pulse AT RthJCdu MAIN =ty 0.39 = t on °/C/W T Et 10 [-2] PaNN) Single pulse SaatLUDA RthJCdu=ty 0.75 = t A on ° I /C/W T EHH<br>t on t on<br>T T<br>10 [-3] 10 [-3]<br>10 PATI [-6] 10 [-5] AIT 10 [-4] 10 [-3] 10 [-2] 10 [-1] ll tp (s) 10 PUM [-6] 10 [-5] 10 [-4] 10 [-3] TTT 10 [-2] 10 [-1] tp (s)<br>**----- End of picture text -----**<br> **DS14757** - **Rev 3** **page 8/15** **GH50H65DRB2-7AG Test circuits** ## **3 Test circuits** **==> picture [513 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 21. Test circuit for inductive load switching Figure 22. Gate charge test circuit<br>A A<br>C<br>L=100 μH<br>G<br>E B<br>B<br>C 3.3μF 1000μF VCC<br>G D.U.T<br>RG<br>K E<br>GND1 GND2<br>(signal ground) (power ground) HB650_4_leads GADG030820201115SA<br>**----- End of picture text -----**<br> **==> picture [513 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 23. Switching waveform Figure 24. Diode reverse recovery waveform<br>90%<br>VG 10%<br>90%<br>VCE tr(Voff) 10%<br>tcross<br>90% 10<br>IC td(on)ton tr(Ion) td(off)toff tf 10%<br>AM01506v1<br>GADG140820170937SA<br>**----- End of picture text -----**<br> **DS14757** - **Rev 3** **page 9/15** **GH50H65DRB2-7AG Package information** ## **4 Package information** To meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions, and product status are available at: www.st.com. ECOPACK is an ST trademark. ## **4.1 H²PAK-7 package information** **Figure 25. H²PAK-7 package outline** **==> picture [147 x 147] intentionally omitted <==** **==> picture [44 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> DM00249216_6<br>**----- End of picture text -----**<br> **DS14757** - **Rev 3** **page 10/15** **GH50H65DRB2-7AG Package information** **Table 7. H²PAK-7 package mechanical data** |**Dim**|**mm**|**mm**| |---|---|---| |**.**|**Min.**|**Max.**| |A|4.30|4.80| |A1|0.03|0.20| |C|1.17|1.37| |e|2.34|2.74| |e1|4.88|5.28| |e2|7.42|7.82| |E|0.45|0.60| |F|0.50|0.70| |H|10.00|10.40| |H1|7.40|8.00| |L|14.75|15.25| |L1|1.27|1.40| |L2|4.35|4.95| |L3|6.85|7.25| |M|1.90|2.50| |R|0.20|0.60| |V|0°|8°| **Figure 26. H²PAK-7 recommended footprint** _Note: Dimensions are in mm._ footprint_DM00249216_6 **DS14757** - **Rev 3** **page 11/15** **GH50H65DRB2-7AG Package information** ## **4.2 H²PAK-7 packing information** ## **Figure 27. H²PAK-7 tape drawing (dimensions are in mm)** **==> picture [44 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> DM01095771_1<br>**----- End of picture text -----**<br> **DS14757** - **Rev 3** **page 12/15** **GH50H65DRB2-7AG** ## **Revision history** **Table 8. Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |16-Aug-2024|1|First release.| |17-Jan-2025|2|Updated_Table 3. Static characteristics_.| |12-May-2025|3|UpdatedSection 4.2: H²PAK-7 packing information.| **DS14757** - **Rev 3** **page 13/15** **GH50H65DRB2-7AG Contents** |**Contents**|**Contents**| |---|---| |**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**| |**2**|**Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3**| ||**2.1**<br>Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**3**|**Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9**| |**4**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10**| ||**4.1**<br>H²PAK-7 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10| ||**4.2**<br>H²PAK-7 packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12| |**Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13**|| **DS14757** - **Rev 3** **page 14/15** **GH50H65DRB2-7AG** ## **IMPORTANT NOTICE – READ CAREFULLY** STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. - © 2025 STMicroelectronics – All rights reserved **DS14757** - **Rev 3** **page 15/15**
Updated at April 21, 2026
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