FT1216MH00TU

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HIGH COMMUTATION TRIAC<br>On-State Current Gate Trigger Current<br>TO-220AB 12 Amp <50mA<br>Off-State Voltage<br>400 V + 800 V<br>FEATURES<br>e Glass/passivated die junctions<br>2 e¢ MediumLow thermalcurrentresist Tri a ncec x)<br>e High commutation<br>e High surge current capability<br>1 5 e Low forward voltage drop<br>3 e Solder dip 260°C, 10s RoHS<br>¢ Component in accordance to RoHS 2011/65/EU COMPLIANT<br>and WEEE 2002/96/EC<br>e Meets MSL level 3, per J-STD-020, LF maximum<br>peak of 260° C<br>MECHANICAL DATA<br>e Case: TO-220AB. Epoxy meets UL 94V-0 flammability<br>rating.<br>MT1 (1) e Polarity: As marked on the body.<br>G (8) ¢ Terminals: Matte tin plated leads, solderable per<br>MIL-STD-750 Method 2026, J-STD-002 and JESD22-B102.<br>Consumer grade, meets JESD 201 class 1A whisker test.<br>TYPICAL APPLICATIONS<br>e Used on inductive loads, thanks to their high commutation<br>MT? (2)<br>performances.<br>Maximun Ratings and Electrical Characteristics at 25°C<br>SYMBOL PARAMETER CONDITIONS Value Unit<br>It(RMs) RMS On-state Current (full sine wave) | All Conduction Angle, To = 105 °C 12 A<br>ltsm Non-repetitive On-State Current Full Cycle, 60 Hz (t = 16.7 ms) 110 A<br>Itsm Non-repetitive On-State Current Full Cycle, 50 Hz (t = 20 ms) 100 A<br>I*t Fusing Current to = 10 ms, Half Cycle 50 A’s<br>lem Peak Gate Current 20 us max. Tj = 125°C 4 A<br>Peavy Average Gate Power Dissipation Tj = 125 °C 1 W<br>dl/dt Critical rate of rise of on-state current | Io = 2x let, tr <100ns 50 A/us<br>f = 120 Hz, Tj = 125 °C<br>iF Operating Temperature (-40 +125) XC<br>T stg Storage Temperature (-40 +150) °C<br>Tsig Soldering Temperature 10s max 260 %C<br>SYMBOL PARAMETER VOLTAGE Unit<br>ee<br>www.fagorelectronica.com Revision: 2 Version: Jul-13<br>Document Name: ft12hhc Page Number: 1/6<br>**----- End of picture text -----**<br>


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HIGH COMMUTATION TRIAG 

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## Electrical Characteristics at Tamb = 25 °C 

|SYMBOL<br>ler)<br>Vet<br>Veo<br>Iq)<br>IL<br>dv/at °°) |<br>(di/dt)c °) <br>Vim — |<br>Vi(o) |<br>rg)<br>loaw/larm |<br>Rini(j-c)<br>Rih(-a)|PARAMETER<br>Gate Trigger Current<br>GateTrigger Voltage<br>Gate NonTrigger Voltage<br>Holding Current<br>Latching Current<br>| Critical Rate ofVoltage Rise |<br> | Critical Rate ofCurrent Rise} <br>|On-state Voltage<br>|ThresholdVoltage<br>Dynamic resistance<br>|Off-State Leakage Current<br>|<br>Thermal Resistance<br>Junction-Case<br>Thermal Resistance<br>Junction-Ambient|CONDITIONS<br>Vp = 12 Voc, Re = 33Q,<br>Tj = 25 °C |<br>Vp = 12Voc, RL = 330, Tj = 25 °C|<br>Vp =Vorm, RL = 3.3 KQ, Tj = 125 °C|<br>lr =100 mA,Gate open, T; = 25 °C<br>Ig = 1.2 let, Tj<br>= 25°C<br>|Vp = 0.67 xVprw, Gateopen<br>Tj = 125 °C<br> (dv/dt)c =0.1V/us = T;<br>= 125 °C<br>(dv/dt)c = 10 V/us<br>Tj = 125 °C<br>without snubber<br>T, = 125 °C<br>lr= 17Amp, tp = 380 us,T; = 25 °C<br>T, = 125 °C<br>Tj = 125 °C<br>|Vp =Vor,<br>Tj = 125 °C<br>Ve =Vern,<br>T; = 25°C<br>forAC 360° conduction angle|Quadrant<br>|Q1+=Q3}MAX}<br>|Q1+Q3|<br>|Q1=Q3|<br>Q1,Q3<br>Q2|Q1+=Q3}MAX}<br>|MAX<br>| MIN<br>MAX}<br>|MAX|<br>|MAX}<br>MIN |<br>MIN|<br>MIN]<br>MIN}<br>MAX<br>MAX<br>MAX<br>MAX<br>MAX|SENSITIVITY<br>aaa<br>ba|Unit<br>| mA<br>V<br>V<br>| mA<br>| mA<br>| mA<br>} V/us<br>|Alms<br>Vv<br>V<br>moa<br>mA<br>UA<br>°C/W<br>°C/W|
|---|---|---|---|---|---|---|
||||||aaa<br>ba<br>25 | 35 |50 |<br>1.3<br>0.2<br>25 | 35 |50 |<br>40 | 50 | 70 |<br>50]<br>60 | 80 |<br>| 200}<br>500 |1000}<br>- |<br>- |<br>-<br>|<br>-<br>-<br>-<br>5.3]<br>6.5 | 12<br>1.55<br>0.85<br>35<br>1<br>5<br>1.4<br>60||



www.fagorelectronica.com Document Name: ft12hhc 

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## Ordering information 

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PREFERRED P/N PACKAGE CODE DELIVERY MODE BASE QUANTITY UNIT WEIGHT (g)<br>**----- End of picture text -----**<br>


Package Outline Dimensions: (mm) _TO-220AB 

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A<br>oP E At |DIMENSIONSDIMENSIONS<br>REF<br>D Q Q—— U| Formatsenana typecou -H- 44 A I 41 . 41 7 41 . 63 7<br>D1 @ MC | Year code A2 2.52 2.82<br>XXXH*|| b 0.71 0.91<br>AW. | b2 1.17 1.37<br>Test sort name L1 C 0.31 0.53<br>Week code D 14.65 15.35<br>b2 L D1 8.50 8.90<br>| | eE 102 5 . 0 1 102 . 3657<br>TT el 4.98 5.18<br>b | | c H1 6.15 6.45<br>— — L 13.40 13.96<br>L1 3.56 3.96<br>e Ae p 3.735 3.935<br>aet Q 2.59 2.89<br>**----- End of picture text -----**<br>


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## Ratings and Characteristics (Ta 25 °C unless otherwise noted) 

Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle) 

Fig. 2: RMS on-state current versus case temperature (full cycle) 

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P (W) IT(RMS)(A)<br>wa STCH 184a<br>Cr a<br>eoLo Se<br>LA to<br>EET TTT TT TET TA 10ge<br>OTT/ sreeeo<br>e CO i<br>BEGRRUGRREH00E) 40000000 (===<br>6 CHA =<br>LETTE a<br>4 HEAT 4} +} ++}<br>LETT TTSo AR EE a eeee<br>>» COAT en<br>C o |<br>9 STU0123456789ETT TTT1011 12 tamsyea) a0 25 50 75a100 125 Te (°C)<br>**----- End of picture text -----**<br>


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Fig. 3: : Relative variation of thermal Fig. 4: On-state characteristics (maximum<br>impedance versus pulse duration values)<br>K=[Zth / Rth] ITM (A)<br>1640 200<br>a |<br>Coo ooo LETT] | Fatma’ [EET TTT<br>ani) APQ 100 EERE RESieeet et<br>HOTT EECCA EEE EEE<br>BF AN A SERRE ASEH<br>vey UCootAW EUVMM AUTH TWHAIL vo ALL TAT LHTT<br>EHH aha) AE Ee = 25°C<br>Set tot 2th-a) PASH | [| Figy | Pt yt<br>ST RUD RUT HARE EEE EE<br>TT CT Bee eee<br>HTT FP<br>veo BN)UML aTIMI BN sTvaiTNsaiii<br>1E3 162 161 140TMT1+TIMLTH1E+2 5642 ul05 10 15 20 25 30 35 40LLL45 vem<br>**----- End of picture text -----**<br>


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Fig. 5: Surge peak on-state current versus Fig. 6: Non repetitive surge peak on-state<br>number of cycles current for a sinusoidal pulse with width:<br>tp < 10 ms, and corresponding value of |t.<br>ITSM ITsm(A). It (A2s)<br>‘607 T_T HI Tj initial = 25 °C<br>rao} FINI TIM l l<br>Ne e — al<br>yoo LUI TTT il<br>a<br>100 LOTCPU ETE 1000 ———={$S——eeee oeSSoe oe SEEoe<br>go  NonCD epestive st} | UIT —— ™| FTA<br>Lu iintar= 250 (TTA | ——~~_| Pt tt<br>60} ETT Po EST<br>a a pT|| PL~<br>Pes a<br>0PN =a SSE<br>oo LETLUA TTTETT ETT es a eeee ee<br>o LLUVUET TTT ETT! Number of cycles wlEEEE TTT toms)<br>1 10 100 1000 1 10<br>**----- End of picture text -----**<br>


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Ratings and Characteristics (Ta 25 °C unless otherwise noted) 

Fig. 7: Relative variation of gate trigger current, holding current and latching versus junction temperature (typical values) 

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55 IGT IH ILITIVIGT IH IL-[Ti=25°C]<br>TETMEET<br>20 [\]<br>A \Pee CCT<br>wsNQUTT TT<br>TTT<br>BSSELECT<br>as TEESEEEEELELL SSSCETEL. | 1]<br>o LLLLE TLL nec)<br>-40-20 0 20 40 60 80 100120140<br>**----- End of picture text -----**<br>


Fig. 8: Relative variation of critical rate of decrease of main current versus junction temperature 

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(dl/dt)c [Tj]/(dl/dc)c [Tj specified]<br>6 FATTTY Tt<br>ACT<br>PALL EP<br>4 aAUaieeeee\<br>PIN TTT<br>\<br>LtCOCO tit<br>NIT<br>EEREPPP TPTss<br>ee)<br>0 25 50 75 100 125<br>**----- End of picture text -----**<br>


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|HIGH COMMUTATION TRIAC|
|Revision|History|
|10-May-2013|Change|values|of:|Iams)/|Irom|/|I?t|/ Vim|/|Veco)|/|fal|Rini-c)|

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