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FS3L30R07W2H3FB11BPSA2
IGBT Module, Twelve Pack, 30 A, 1.5 V, 135 W, 175 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Available until stocks are exhausted Alternative available
- SVHC: No SVHC (27-Jun-2018)
- Product Range: EasyPACK CoolSiC
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 135W
- IGBT Configuration: Twelve Pack
- Transistor Mounting: Panel
- DC Collector Current: 30A
- Power Dissipation Pd: 135W
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 30A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.5V
- Collector Emitter Saturation Voltage Vce(on): 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 31.69 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-模块 IGBT-modules FS3L30R07W2H3F_B11
NTC
**==> picture [2 x 2] intentionally omitted <==**
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VCES = 650V IC nom = 30A / ICRM = 60A
**典型应用**
- 三电平应用
- • 电机传动 • 太阳能应用 • UPS系统
- 3-Level-Applications
-
-
-
## **电气特性**
-
- 低开关损耗
-
-
-
- H
## **机械特性**
- 2O3
- 紧凑型设计
-
- Al2O3
-
-
- 集成的安装夹使安装坚固 • Rugged mounting due to integrated mounting clamps
1
## 技术信息�/�Technical�Information
IGBT-模块 IGBT-modules FS3L30R07W2H3F_B11
**==> picture [86 x 38] intentionally omitted <==**
## **初步数据 Preliminary�Data**
## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values**
|技术信息/TechnicalInformation<br>FS3L30R07W2H3F_B11<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:CD<br>approvedby:MB<br>dateofpublication:2013-06-27<br>revision:2.0<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj= 175°C<br>TC= 25°C, Tvj= 175°C<br>IC nom<br>IC<br>30<br>45<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>60<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj= 175°C<br>Ptot<br>135<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>VCE sat<br>1,50<br>1,70<br>1,80<br>1,90<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 0,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,30<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,65<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,051<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 33Ω<br>td on<br>0,042<br>0,044<br>0,044<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 33Ω<br>tr<br>0,038<br>0,044<br>0,044<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 33Ω<br>td off<br>0,26<br>0,28<br>0,285<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 33Ω<br>tf<br>0,042<br>0,06<br>0,065<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 30 A, VCE= 300 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 800 A/µs (Tvj=150°C)<br>RGon= 33Ω<br>Eon<br>0,88<br>1,10<br>1,15<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 30 A, VCE= 300 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3700 V/µs (Tvj=150°C)<br>RGoff= 33Ω<br>Eoff<br>0,67<br>0,84<br>0,91<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>160<br>A<br>Tvj= 150°C<br>tP ≤5 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>1,05<br>1,10<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>1,10<br>K/W||
|preparedby:CD|dateofpublication:2013-06-27|
|---|---|
|approvedby:MB|revision:2.0|
2
## 技术信息�/�Technical�Information
IGBT-模块 IGBT-modules FS3L30R07W2H3F_B11
**==> picture [86 x 38] intentionally omitted <==**
## **初步数据 Preliminary�Data**
## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values**
|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|650||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|30|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|60|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>82,0|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,60<br>1,55<br>1,50|2,00|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 30 A, - diF/dt = 800 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||15,5<br>20,5<br>22,0||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 30 A, - diF/dt = 800 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,10<br>1,90<br>2,20||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 30 A, - diF/dt = 800 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,18<br>0,34<br>0,41||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC||1,25|1,35|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||1,35||K/W|
prepared�by:�CD approved�by:�MB
date�of�publication:�2013-06-27 revision:�2.0
3
## 技术信息�/�Technical�Information
IGBT-模块 IGBT-modules FS3L30R07W2H3F_B11
**==> picture [86 x 38] intentionally omitted <==**
## **初步数据 Preliminary�Data**
## **IGBT,�三电平�/�IGBT,3-Level 最大额定值�/�Maximum�Rated�Values**
|技术信息/TechnicalInformation<br>FS3L30R07W2H3F_B11<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:CD<br>approvedby:MB<br>dateofpublication:2013-06-27<br>revision:2.0<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,三电平/IGBT,3-Level**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj= 175°C<br>TC= 25°C, Tvj= 175°C<br>IC nom<br>IC<br>30<br>50<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>60<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj= 175°C<br>Ptot<br>135<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,80<br>1,85<br>1,95<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 0,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,30<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,65<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,051<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 20Ω<br>td on<br>0,03<br>0,03<br>0,031<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 20Ω<br>tr<br>0,035<br>0,036<br>0,05<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 20Ω<br>td off<br>0,175<br>0,19<br>0,20<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 20Ω<br>tf<br>0,019<br>0,038<br>0,043<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 30 A, VCE= 300 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 830 A/µs (Tvj=150°C)<br>RGon= 20Ω<br>Eon<br>0,38<br>0,40<br>0,41<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 30 A, VCE= 300 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 5400 V/µs (Tvj=150°C)<br>RGoff= 20Ω<br>Eoff<br>0,42<br>0,64<br>0,71<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>160<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>1,05<br>1,10<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>1,10<br>K/W||
|preparedby:CD|dateofpublication:2013-06-27|
|---|---|
|approvedby:MB|revision:2.0|
4
## 技术信息�/�Technical�Information
IGBT-模块 IGBT-modules FS3L30R07W2H3F_B11
**==> picture [86 x 38] intentionally omitted <==**
**初步数据 Preliminary�Data**
## **二极管,�三电平�/�Diode,�3-Level 最大额定值�/�Maximum�Rated�Values**
|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|V|
|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|8|A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|16|A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|8,00<br>|A²s|
## **特征值�/�Characteristic�Values**
||||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 8 A, VGE= 0 V<br>IF= 8 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||1,50<br>1,65|1,70|V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 8 A, - diF/dt = 400 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||6,30<br>6,80||A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 8 A, - diF/dt = 400 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||0,22<br>0,37||µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 8 A, - diF/dt = 400 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||0,01<br>0,01||mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC||2,40|2,60|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||2,60||K/W|
## **负温度系数热敏电阻�/�NTC-Thermistor**
## **特征值�/�Characteristic�Values**
|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||
prepared�by:�CD date�of�publication:�2013-06-27 approved�by:�MB revision:�2.0
5
## 技术信息�/�Technical�Information
## IGBT-模块 IGBT-modules FS3L30R07W2H3F_B11
**==> picture [86 x 38] intentionally omitted <==**
## **初步数据 Preliminary�Data**
## **模块�/�Module**
|**模块/Module**|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|内部绝缘<br>Internalisolation|基本绝缘(class1,IEC61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|爬电距离<br>Creepagedistance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||11,5<br>6,3|||mm|
|电气间隙<br>Clearance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||10,0<br>5,0|||mm|
|相对电痕指数<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|杂散电感,模块<br>Strayinductancemodule||LsCE||45||nH|
|最大结温<br>Maximumjunctiontemperature|逆变器,制动-斩波器/inverter,brake-chopper|Tvj max|||175|°C|
|在开关状态下温度<br>Temperatureunderswitchingconditions|逆变器,制动-斩波器/inverter,brake-chopper|Tvj op|-40||150|°C|
|储存温度<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|40|-|80|N|
|重量<br>Weight||G||39||g|
Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25A rms per connector pin Designed for storage conditions according to Infineon TR14 (Application Note “Storage of Products” Supplied by Infineon Technologies) Designed for climate conditions without condensation or precipitation
prepared�by:�CD date�of�publication:�2013-06-27 approved�by:�MB revision:�2.0
6
## IGBT-模块 IGBT-modules
## FS3L30R07W2H3F_B11
## **初步数据**
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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>60 60<br>S T S vj = 25°C | / / es VGE = 19V | :<br>Tvj = 125°C VGE = 17V<br>Tvj = 150°C VGE = 15V<br>50 eSo o ee‘ / 50 VGE = 13V ’ )’<br>VGE = 11V<br>VGE = 9V<br>40 40<br>oe / ; ’<br>30 30<br>20 20<br>f 4<br>10 f 10 hl.<br>0 0<br>0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 0,0 1,0 2,0 3,0 4,0 5,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (BB) FFHIRE IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =33 Ω ,R Goff =33 Ω ,V CE =300V<br>60 3,0<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>50 2,5 Eoff, Tvj = 150°C<br>40 2,0<br>30 1,5<br>20 1,0<br>sii<br>10 0,5<br>w ts} LEee<br>0 0,0<br>5 6 7 8 9 10 11 12 0 10 20 30 40 50 60<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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IGBT-模块 IGBT-modules FS3L30R07W2H3F_B11
## **初步数据**
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Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =+15V,1 C =30A,V CE =300V<br>8 —_— Eon, Tvj = 125°C 7 10 S ZthJH : IGBT one<br>Eoff, Tvj = 125°C / H— Fe e ee<br>7 | Eon, Tvj = 150°C BaELa ooo TTT ee<br>a Eoff, Tvj = 150°C Va ee ee<br>J AY a<br>6<br>Vara pee ae<br>1<br>5 T a e) Ge e<br>4 eee<br>rT TTT re<br>4 PLL | er yy YTTTTETT<br>3 P| | YTZ | | | y | Eta |maaan<br>0,1<br>ot PE<br>2 ATT TE ZC LIMITE VIL LU<br>1 BapeastanteennPy | | AEEes R i: ri[K/W]: 1 0,0423 2 0,2043 ttt 3 0,4249 4 1,4785<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>0 0,01<br>ee ee a llie<br>0 40 80 120 160 200 240 280 320 360 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>**----- End of picture text -----**<br>
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IF =f(V F) Erec =f(l F)<br>RGon = 33, V CE =300V<br>60 0,5<br>Tvj = 25°C Erec, Tvj = 125°C<br>Tvj = 125°C Erec, Tvj = 150°C<br>Tvj = 150°C<br>50<br>0,4<br>40<br>EeZaGn<br>0,3<br>30<br>0,2<br>20<br>0,1<br>10<br>0 0,0<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 0 10 20 30 40 50 60<br>VF [V] IF [A]<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>
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## IGBT-模块 IGBT-modules FS3L30R07W2H3F_B11
## **初步数据**
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Erec =f(R G) ZthJH =f(t<br>IF 30 nV CE = 300 V 0<br>0,5 Es 10 ee<br>| TE<br>Erec, Tvj = 125°C ZthJH : Diode<br>Erec, Tvj = 150°C<br>TY H— SE<br>En e J y yyy eio o ors a i<br>0,4<br>PU LI ETE TT<br>: UAAr E TTT<br>\ EAE Li o<br>0,3 | 1 wail<br>. HEHt EH HHH<br>\ rT Titi TET TTT]<br>0,2<br>200 |<br>SSoS PTee TTTT|<br>0,1<br>=~ PALICr EICEE i: 1 CECI 2 ETT 3 4 CE E<br>ri[K/W]: 0,1999 0,4286 0,8282 1,1437<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>0,0 0,1<br>0 40 80 120 160 200 240 280 320 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RW StE IGBT, =F ( #22!) Ra tStE IGBT, =F ( #22)<br>output characteristic IGBT,3-Level (typical) output characteristic IGBT,3-Level (typical)<br>IC =f(V CE) IC =f(V CE)<br>VGE De V Tvj = {50°C<br>60 a | / Cf 60 | ; i 7<br>Tvj = 25°C VGE = 19 V<br>Tvj = 125°C VGE = 17 V<br>50 Tvj —EE = 150°C | : af‘ 50 VVGEGE = 15 V = 13 V if; / —L -——<br>VGE = 11 V<br>ie / L a<br>VGE = 9 V<br>EJ / aa<br>40 40<br>’<br>30 30<br>YW ‘yf<br>/ “oe /:1p \f<br>20 20<br>7 -<br>10 10<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 1,0 2,0 3,0 4,0 5,0<br>VCE [V] VCE [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br>
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I transfer C GE characteristic ) IGBT,3-Level(typical) E switching on C losses off IGBT,3-Level C) (typical)<br>VCE soy VGE woe R Gon | 820 Ω »,R Goff =20 Ω ,V CE =300V<br>60 a | 1,5 |<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>50 El Eoff, Tvj = 150°C<br>| Pl) A EeLL.<br>Ay<br>aa a [A a<br>40 1,0<br>/<br>A] LL Ley<br>30<br>20 i/| 0,5 eeaa<br>ey) LE<br>10 SZ)o“erY7 LAZA Varx 7 /<br>0 0,0<br>| [A<br>5 6 7 8 9 10 11 0 10 20 30 40 50 60<br>VGE [V] IC [A]<br>FX IGBT, =H ( HAH) IBAIRIRHL IGBT, = 857<br>switching losses IGBT,3-Level (typical) transient thermal impedance IGBT,3-Level<br>Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =30A,V CE =300V<br>6 SS 10 __—____ ee<br>Eon, Tvj = 125°C ZthJC : IGBT<br>EEoffon, T, Tvjvj = 125°C = 150°C P r<br>5 Eoff, Tvj = 150°C<br>PT Ce<br>1<br>4 TT Y| «=eTTT PP e o<br>ae<br>yt LK LL ac Ce<br>3 / 0,1 AC<br>2<br>Zw oe<br>0,01<br>f Pt ie pa<br>1<br>i: 1 2 3 4<br>ri[K/W]: 0,0423 0,2043 0,4249 1,4785<br>ana atin τ i[s]: 0,0005 0,005 0,05 0,2 tt<br>0 PTT TTL TL d- 0,001 PLETTT pTT<br>0 20 40 60 80 100 120 140 160 180 200 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [A]<br>IC E [mJ]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>
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## IGBT-模块 IGBT-modules FS3L30R07W2H3F_B11
## **初步数据**
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IF =f(V F) Erec =fil F)<br>RGon = So Ω ,V CE =300V<br>16 0,015<br>Tvj = 25°C Erec, Tvj = 125°C<br>Tvj = 125°C<br>14 EJ<br>12<br>Pt [Jf 4 o ><br>0,010<br>10 P| || | ye chy]aopee<br>8<br>6<br>0,005<br>4<br>ScepAca ET<br>2<br>0 0,000<br>0,0 0,4 0,8 1,2 1,6 2,0 2,4 0 2 4 6 8 10 12 14 16<br>VF [V] IF [A]<br>FRE RE, = ( BB) RAR —hE, = BF<br>switching losses Diode, 3-Level (typical) transient thermal impedance Diode, 3-Level<br>Erec =f(R G) ZthJH =f<br>IF -paly CE = 300 V 0<br>0,015 SS 10 ee<br>I— Erec, Tvj = 125°C A| ZthJH : Diode Se co e e<br>Ey} y| fy eV a |<br>|<br>PTTr ITI I FT<br>0,010 TNA<br>EEN EM<br>Ml<br>1<br>rT ATT TT Titi Tf Tt TTT TTT]<br>YT 7I Tt oT TTTETT<br>A\ ATTT<br>0,005<br>NO 7<br>ALT NETLNN | CCIEa aeEEE PT| Fr||| |<br>i: 1 2 3 4<br>ri[K/W]: 0,2211 1,3414 1,8834 1,553<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>Th OT<br>0,000 0,1<br>0 20 40 60 80 100 120 140 160 180 200 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [A]<br>IF E [mJ]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>**----- End of picture text -----**<br>
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## IGBT-模块 IGBT-modules FS3L30R07W2H3F_B11
## **初步数据**
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100000<br>Rtyp<br>H— = (| —<br>Ras ce<br>e e<br>e a e ssee<br>10000 | | |<br>nt [i] ee ee<br>———<br>ER Ne es es es es es<br>a Ne eses<br>P|NNee<br>pp Nf<br>1000 ERNE<br>————a<br>poNN<br>sea es<br>a ee eee<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>
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## 技术信息�/�Technical�Information
IGBT-模块 IGBT-modules FS3L30R07W2H3F_B11
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## **初步数据 Preliminary�Data**
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prepared�by:�CD date�of�publication:�2013-06-27 approved�by:�MB revision:�2.0
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IGBT-模块 IGBT-modules FS3L30R07W2H3F_B11
## **初步数据**
## **使用条件和条款**
使用条件和条款
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Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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