FFB20UP20STM

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## Ultrafast Diode 200 V, 20 A FFB20UP20S 

## **Description** 

The FFB20UP20S is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial applications as welder application. 

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2<br>1<br>3<br>D [2] PAK<br>3−LEAD<br>CASE 418AJ<br>**----- End of picture text -----**<br>


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1. Anode<br>**----- End of picture text -----**<br>


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2. Cathode<br>**----- End of picture text -----**<br>


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3. Anode<br>**----- End of picture text -----**<br>


## **Features** 

- Ultrafast Recovery, trr = 45 ns (@ IF = 20 A) 

## **MARKING DIAGRAM** 

- Max Forward Voltage, VF = 1.15 V (@ TC = 25°C) 

- Reverse Voltage, VRRM = 200 V 

- Avalanche Energy Rated 

- RoHS Compliant 

## **Applications** 

- Output Rectifiers 

- SMPS, Welder, UPS 

- Free−Wheeling Diode for Motor Application 

- Power Switching Circuits 

## **ABSOLUTE MAXIMUM RATINGS** 

F20UP20SG AYWW F20UP20S = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package 

TC = 25 ° C unless otherwise noted 

|**Symbol**|**Parameter**|**Rating**|**Unit**|
|---|---|---|---|
|VRRM|Peak Repetitive Reverse Voltage|200|V|
|VRWM|Working Peak Reverse Voltage|200|V|
|VR|DC Blocking Voltage|200|V|
|IF(AV)|Average Rectified Forward Current<br>@ TC= 115°C|20|A|
|IFSM|Non−repetitive Peak Surge Current<br>60 Hz Single Half−Sine Wave|200|A|
|TJ,TSTG|Operating Junction and Storage<br>Temperature Range|−65 to<br>+175|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2006 **February, 2022 − Rev. 3** 

**FFB20UP20S/D** 

**FFB20UP20S** 

## **THERMAL CHARACTERISTICS** TC = 25 ° C unless otherwise noted 

|**Symbol**|**Parameter**|**Max**|**Unit**|
|---|---|---|---|
|RθJC|Maximum Thermal Resistance, Junction−to−Case|2.0|°C/W|



## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Part Number**|**Top Mark**|**Package**|**Packing Method**|**Reel Size**|**Tape Width**|**Quantity**|
|---|---|---|---|---|---|---|
|FFB20UP20STM|F20UP20S|D2PAK|Reel|13″Dia|N/A|800|



## **ELECTRICAL CHARACTERISTICS** TC = 25 ° C unless otherwise noted 

|**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**TC = 25C = 25= 25°C unless otherwise noted|**ELECTRICAL CHARACTERISTICS**TC = 25C = 25= 25°C unless otherwise noted|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Conditions**||**Min**|**Typ**|**Max**|**Unit**|
|VF<br>(Note 1)|Forward Voltage<br>IF= 20 A<br>IF= 20 A|TC= 25°C<br>TC= 100°C|−<br>−|−<br>−|1.15<br>1.0|V|
|IR<br>(Note 1)|Reverse Current<br>VR= 200 V<br>VR= 200 V|TC= 25°C<br>TC= 100°C|−<br>−|−<br>−|100<br>500|A|
|trr|IF= 1 A, diF/dt = 100 A/ s, VR= 30 V<br>IF= 20 A, diF/dt = 200 A/ s, VR= 130 V<br>u<br>u|TC= 25°C|−<br>−|−<br>−|35<br>45|ns|
|ta<br>tb<br>Qrr|IF= 20 A, diF/dt = 200 A/ s, VR= 130 V|TC= 25°C|−<br>−<br>−|11<br>13<br>21|−<br>−<br>−|ns<br>ns<br>nC|
|WAVL|Avalanche Energy (L = 40 mH)||20|−|−|mJ|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2% u 

## **Test Circuit and Waveforms** 

**Figure 1. Diode Reverse Recovery Test Circuit & Waveform** 

**Figure 2. Unclamped Inductive Switching Test Circuit & Waveform** 

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**FFB20UP20S** 

## **TYPICAL CHARACTERISTICS** 

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100<br>T C  = 75 oC<br>10<br>TC = 125o C<br>T C  = 25 oC<br>1<br>0.1<br>0.4 0.6 0.8 1.0 1. 2 1.4 1.6<br>FORWARD VOLTAGE, VF [V]<br> [A]<br> F<br>FORWARD CURRENT, I<br>**----- End of picture text -----**<br>


**Figure 3. Typical Forward Voltage Drop** 

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10<br>TC = 125 oC<br>1<br>TC  = 100 o C<br>0.1<br>TC = 75 o C<br>TC = 25 o C<br>0.01<br>1E−3<br>0 50 100 150 200<br>REVERSE VOLTAGE, V R [V]<br>A]<br>�<br> [<br>REVERSE CURRENT,  IR<br>**----- End of picture text -----**<br>


**Figure 4. Typical Reverse Current** 

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400<br>f = 1MHz<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0.1 1 10 100<br>REVERSE VOLTAGE, V R [V] R [V] [V]<br> [pF]JUNCTION CAPACITANCE,  CJ<br>**----- End of picture text -----**<br>


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f = 1MHz<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0.1 1 10<br>REVERSE VOLTAGE, V R [V] R [V] [V]<br>Figure 5. Typical Junction Capacitance<br>12<br>IF = 20A<br>10<br>8<br>TC = 125 o C<br>6<br>TC = 75 o C<br>4<br>T C  = 25 o C<br>2<br>0<br>100 200 300 400 500<br>di F/dt [A/ μ s]<br>J<br>REVERSE RECOVERY CURRENT, Irr [A]<br>**----- End of picture text -----**<br>


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52<br>I F  = 20A<br>48<br>44<br>40 TC = 125 o C<br>36<br>32 T C  = 75 o C<br>28<br>24 T C  = 25 o C<br>20<br>100 200 300 400 500<br>di F/dt [A / μ s]<br>Figure 6. Typical Reverse Recovery Time<br>30<br>25<br>20<br>15 DC<br>10<br>5<br>0<br>100 110 120 130 140 150<br>CASE TEMPERATURE, TC [ [o] C]<br>rr [ns]<br> T<br>REVERSE RECOVERY TIME,<br> [A]<br> F(AV)<br>AVERAGE FORWARD CURRENT, I<br>**----- End of picture text -----**<br>


**Figure 7. Typical Reverse Recovery Current** 

**Figure 8. Forward Current Derating Curve** 

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**FFB20UP20S** 

## **PACKAGE DIMENSIONS** 

**D[2] PAK−3 (TO−263, 3−LEAD)** CASE 418AJ ISSUE F 

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