FF900R12ME7B11BOSA1

IGBT Module, Dual, 900 A, 1.5 V, 175 °C, Module

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Manufacturer: INFINEON
Product type: IGBT Modules
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 11Pins
Product Range: EconoDUAL 3 TRENCHSTOP
IGBT Technology: IGBT 7
IGBT Termination: Stud
Power Dissipation: -
IGBT Configuration: Dual
Transistor Mounting: Panel
Transistor Polarity: Dual N Channel
DC Collector Current: 900A
Power Dissipation Pd: -
Transistor Case Style: Module
Operating Temperature Max: 175°C
Junction Temperature Tj Max: 175°C
Continuous Collector Current: 900A
Collector Emitter Voltage Max: 1.2kV
Collector Emitter Voltage V(br)ceo: 1.2kV
Collector Emitter Saturation Voltage: 1.5V
Collector Emitter Saturation Voltage Vce(on): 1.5V

Delivery and price
Units per pack	6
Price	178.18 €
Current stock	10+
Lead time	30 days

Datasheet

## FF900R12ME7_B11 

VCES = 1200V IC nom = 900A / ICRM = 1800A 

- Hochleistungsumrichter 

- • Hybrid-Nutzfahrzeuge • Motorantriebe • Servoumrichter • USV-Systeme 

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- Trenchstop[TM] 

- • VCEsat mit 

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- Standardgehäuse 

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- Trenchstop[TM] 

- VCEsat 

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**Digit** 

Datasheet www.infineon.com 

2019-12-20 

FF900R12ME7_B11 

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|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TC= 90°C, Tvj max= 175°C|ICDC|900|||A|
|GrenzeffektivstromderModulDC-Kontakte<br>MaximumRMSmoduleDC-terminalcurrent|TTerminal ≤90°C, TC= 90°C<br>TTerminal ≤105°C, TC= 90°C|ITRMS|580<br>565|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|1800|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 900 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,50<br>1,65<br>1,75|1,80|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 18,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,15|5,80|6,45|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||14,3||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,5||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||122||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,72||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V, Tvj= 25°C|ICES|||0,1|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 900 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,41<br>0,46<br>0,49||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 900 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,10<br>0,11<br>0,12||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 900 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,55<br>0,63<br>0,69||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 900 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,11<br>0,23<br>0,33||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 900 A, VCE= 600 V, Lσ= 25 nH<br>di/dt = 6200 A/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGon= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||89,0<br>138<br>170||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 900 A, VCE= 600 V, Lσ= 25 nH<br>du/dt = 3000 V/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGoff= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||89,0<br>130<br>158||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>Tvj= 175°C<br>tP ≤8 µs,<br>tP ≤6 µs,|ISC||3200<br>3000||A<br>A|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proIGBT/perIGBT|RthJC|||0,0452|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,0269||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|



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## **Diode,�Wechselrichter�/�Diode,�Inverter** 

## **Höchstzulässige�Werte�/�Maximum�Rated�Values** 

|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200|1200|V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|900|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1800|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|35000<br>30000<br>|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 900 A, VGE= 0 V<br>IF= 900 A, VGE= 0 V<br>IF= 900 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,80<br>1,70<br>1,65|2,05|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 900 A, - diF/dt = 6200 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||389<br>511<br>578||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 900 A, - diF/dt = 6200 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||65,0<br>127<br>171||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 900 A, - diF/dt = 6200 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||29,0<br>52,0<br>68,0||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,0868|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,0342||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|



## **NTC-Widerstand�/�NTC-Thermistor Charakteristische�Werte�/�Characteristic�Values** 

|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|



Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. 

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## **Modul�/�Module** 

|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min|VISOL|3,4<br>|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||15,0<br>13,0<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||12,5<br>10,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
|RelativerTemperaturindex(elektr.)<br>RTIElec.|Gehäuse<br>housing|RTI|140|||°C|
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||0,80||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,0|-|6,0|Nm|
|Gewicht<br>Weight||G||345||g|



Tvjop > 150 °C ist nur im Überlastbetrieb zulässig. Detailierte Angaben sind AN 2018-14 zu entnehmen. 

Tvjop > 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14. 

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**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V 

**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�175°C 

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1800 1800<br>Tvj = 25°C VGE = 19V<br>Tvj = 125°C VGE = 17V<br>Tvj = 175°C VGE = 15V<br>VGE = 13V<br>1500 1500 VGE = 11V<br>VGE = 9V<br>1200 1200<br>900 900<br>600 600<br>300 300<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A]  [A]<br>IC IC<br>**----- End of picture text -----**<br>


**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V 

## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) 

VGE�=�±15�V,�RGon�=�0.51� Ω ,�RGoff�=�0.51� Ω ,�VCE�=�600�V 

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1800 1000<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eon, Tvj = 175°C<br>Tvj = 175°C 900 E off , T vj  = 125°C<br>Eoff, Tvj = 175°C<br>1500<br>800<br>700<br>1200<br>600<br>900 500<br>400<br>600<br>300<br>200<br>300<br>100<br>0 0<br>4 5 6 7 8 9 10 11 12 13 14 0 300 600 900 1200 1500 1800<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>


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Eon =f(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l)t=f(l),t C r C doff =f(l),t C f =f(l C)<br>VGE =+15V,1 C =900A,V CE =600V VGE =415V,R Gon =051 Ω ,R Goff =051 Ω ,V CE =600V<br>600 10<br>Fe<br>tdon<br>550 t r<br>t doff<br>t f<br>/ 7, Ef<br>500<br>4 i<br>450 7 7 ee ee [ee] ee<br>400 1<br>/777 pesySALes<br>350 7 Po a enn nnn]<br>a<br>300<br>250 _— T ~ ~<br>— [aa]<br>200 0,1<br>Ay ——————<br>150 Seeeee es ><br>100 Eon, Tvj = 125 ° C<br>Eon, Tvj = 175°C<br>50 E E off off , T , T vj vj  = 125°C  = 175 ° C<br>0 0,01<br>0 1 2 3 4 5 6 0 300 600 900 1200 1500 1800<br>RG [ Ω ] IC [A]<br>Schaltzeiten IGBT,Wechselrichter (typisch) dv/dt IGBT,Wechselrichter (typisch)<br>switching times IGBT,Inverter (typical) dv/dt IGBT, Inverter (typical)<br>tdon =f(R),t=f(R),t G r G doff =f(R)t=f(R),t G r G doff =f(R),t=f(R G f G) dv/dt= f(R G)<br>VGE =+15V,1 C =900A,V CE =600V VGE =+15V, | c =900A,V CE =600V,T vj = 25°C<br>10 a a a a 7<br>a tdon ee dv/dt-on at 1/10 Ic<br>t r dv/dt-off at Ic<br>| a<br>t doff<br>———— t f 6<br>5<br>\<br>1<br>--a \\<br>4<br>3 ><br>eaee PAK<br>7 N<br>NX<br>0,1  N<br> N<br>2 N<br>==—=———— ~N; |<br>1<br>0,01 0<br>0 1 2 3 4 5 6 0 1 2 3 4 5 6<br>RG [ Ω ] RG [Ohm]<br>E [mJ] t [µs]<br>t [µs]<br>dv/dt [V/ns]<br>**----- End of picture text -----**<br>


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## **(RBSOA)** 

ZthJC 

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**----- Start of picture text -----**<br>
IC =f(V CE)<br>VGE =+15V,R Goff =051 Ω ,T vj =175°C<br>2200<br>IC, ModulC, Modul, Modul<br>2000 IC, ChipC, Chip, Chip Chipp<br>1800<br>1600<br>1400<br>1200<br>1000<br>800<br>600<br>400<br>200<br>0<br>0 200 400 600 800 1000 1200 1400<br>VCE  [V]CE  [V]  [V]<br> [A]ICC<br>ICC<br>**----- End of picture text -----**<br>


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0,1 2200<br>ZthJC : IGBT IC, ModulC, Modul, Modul<br>2000 IC, ChipC, Chip, Chip Chipp<br>1800<br>1600<br>1400<br>1200<br>0,01<br>1000<br>800<br>600<br>400<br>i: 1 2 3 4<br>ri[K/W]: 0,00322 0,0286 0,00758 0,00579<br>τ i[s]: 0,00181 0,0387 0,148 1,213 200<br>0,001 0<br>0,001 0,01 0,1 1 10 0 200 400 600 800 1000 1200<br>t [s] VCE  [V]CE  [V]  [V]<br>Kapazitats Charakteristik IGBT,Wechselrichter (typisch) Gateladungs Charakteristik IGBT,Wechselrichter (typisch)<br>capacity characteristic IGBT,Inverter (typical) gate charge characteristic IGBT,Inverter (typical)<br>C=fV CE)) VGE =f(Q G)<br>GE =0V,T vj = 25°C, f= 100kHz IC =900A,T vj = 25°C<br>1000 15<br>CC ies oes 13 VCE =  600 V<br>C res<br>11<br>100 a 9<br>7<br>po<br>5<br>10 3<br>a<br>(a a 1<br>a \ ~ -1<br>‘ 7S —<br>1 -3<br>Sr aaaa =e<br>-5<br>-7<br>0,1 -9<br>-11<br>-13<br>0,01 PtP ET -15<br>0 10 20 30 40 50 60 70 80 90 100 0 3 6 9 12 15<br>VCE [V] QG [µC]<br> [K/W]thJC  [A]ICC<br>Z<br> [V]<br>GE<br>C [nF] V<br>**----- End of picture text -----**<br>


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C=fV CE))<br>VGE =0V,T vj<br>**----- End of picture text -----**<br>


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IF =f(V F) Erec =fil F)<br>RGon =0.51 Ω ,V CE =600V<br>1800 80<br>Tvj = 25°C / [/] Erec, Tvj = 125°C<br>Tvj = 125°C | Erec, Tvj = 175°C<br>Tvj = 175°C i/i 70<br>/<br>1500<br>/ [/]<br>/<br>/ 60<br>///<br>/ /<br>1200 /<br>i/ /<br>// 50 /<br>// [/]<br>i /<br>900 ‘] 1 40 7<br>//<br>/ /<br>1/ /<br>// 30<br>7 7<br>600<br>20<br>300<br>10<br>0 aan 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0 300 600 900 1200 1500 1800<br>VF [V] IF [A]<br>Schaltverluste Diode, Wechselrichter (typisch) Transienter Warmewiderstand Diode, Wechselrichter<br>switching losses Diode, Inverter (typical) transient thermal impedance Diode, Inverter<br>Erec =f(R G) ZthJC =f (t)<br>IF =900A,V CE =600V<br>80 0,1 p—t iti | iTT<br>Erec, Tvj = 125°C ZthJC : Diode<br>Erec, Tvj = 175°C<br>70<br>\ “TH i aaa<br>60 \<br>\<br>\<br>\<br>50<br>N<br> N<br>~<br>40 ~ ~~ 0,01 A|<br>30<br>20<br>10 i: 1 2 3 4<br>ri[K/W]: 0,00619 0,0549 0,0146 0,0111<br>τ i[s]: 0,00181 0,0387 0,148 1,213<br>0 0,001<br>0 1 2 3 4 5 6 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [A]<br>IF E [mJ]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>


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**NTC-Widerstand-Temperaturkennlinie�(typisch) NTC-Thermistor-temperature�characteristic�(typical)** R�=�f�(TNTC) 

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100000<br>Rtyp<br>10000<br>1000<br>100<br>10<br>0 25 50 75 100 125 150 175<br>TNTC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>


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## **Schaltplan�/�Circuit�diagram** 

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## **Gehäuseabmessungen�/�Package�outlines** 

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10 

V�3.0 2019-12-20 

Datasheet 

## **Trademarks** 

## **WARNHINWEIS** 

## **WARNINGS**

Updated at April 28, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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