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FF1800R12IE5PBPSA1
IGBT Module, Dual, 1.8 kA, 1.7 V, 175 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: PrimePACK 3+B
- IGBT Technology: IGBT 5 [Trench/Field Stop]
- IGBT Termination: Tab
- Power Dissipation: -
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- DC Collector Current: 1.8kA
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 1.8kA
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.7V
- Collector Emitter Saturation Voltage Vce(on): 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 842.51 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
FF1800R12IE5P VCES = 1200V IC nom = 1800A / ICRM = 3600A アプリケーションの可能性 - UPSシステム - ソーラーアプリケーション - ハイパワーコンバータ - モーター駆動 - - - - 電気的特性 - T - T - • - 優れたロバスト性 - - • - 高い短絡耐量 - ## 機械的特性 - • - CTI(比較トラッキング指数）>400のモジュールパッケージ - • - 長い縁面/空間距離 - • - 高いパワー/サーマルサイクル耐量 - 高いパワー密度 • **Digit** Datasheet www.infineon.com 2020-06-17 ## FF1800R12IE5P **==> picture [86 x 38] intentionally omitted <==** ## IGBT-�インバータ�/�IGBT,Inverter 最大定格�/�Maximum�Rated�Values |最大定格/MaximumRatedValues||||||| |---|---|---|---|---|---|---| |コレクタ・エミッタ間電圧<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V| |連続DCコレクタ電流<br>ContinuousDCcollectorcurrent|TH= 50°C, Tvj max= 175°C|ICDC|1800|||A| |繰り返しピークコレクタ電流<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|3600|||A| |ゲート・エミッタ間ピーク電圧<br>Gate-emitterpeakvoltage||VGES|+/-20|||V| |電気的特性/CharacteristicValues|||min.|typ.|max.|| |コレクタ・エミッタ間飽和電圧<br>Collector-emittersaturationvoltage|IC= 1800 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,70<br>2,00<br>2,15|2,15<br>2,45<br>2,60|V<br>V<br>V| |ゲート・エミッタ間しきい値電圧<br>Gatethresholdvoltage|IC= 49,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,25|5,80|6,35|V| |ゲート電荷量<br>Gatecharge|VGE= -15 / 15 V|QG||8,65||µC| |内蔵ゲート抵抗<br>Internalgateresistor|Tvj= 25°C|RGint||0,5||Ω| |入力容量<br>Inputcapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||98,5||nF| |帰還容量<br>Reversetransfercapacitance|f = 1000 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||3,90||nF| |コレクタ・エミッタ間遮断電流<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V<br>Tvj= 25°C|ICES|||5,0|mA| |ゲート・エミッタ間漏れ電流<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||400|nA| |ターンオン遅れ時間（誘導負荷）<br>Turn-ondelaytime,inductiveload|IC= 1800 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,24<br>0,29<br>0,31||µs<br>µs<br>µs| |ターンオン上昇時間（誘導負荷）<br>Risetime,inductiveload|IC= 1800 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,19<br>0,20<br>0,20||µs<br>µs<br>µs| |ターンオフ遅れ時間（誘導負荷）<br>Turn-offdelaytime,inductiveload|IC= 1800 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,57<br>0,63<br>0,66||µs<br>µs<br>µs| |ターンオフ下降時間（誘導負荷）<br>Falltime,inductiveload|IC= 1800 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,10<br>0,12<br>0,14||µs<br>µs<br>µs| |ターンオンスイッチング損失<br>Turn-onenergylossperpulse|IC= 1800 A, VCE= 600 V, Lσ= 30 nH<br>di/dt = 8150 A/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGon= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||130<br>195<br>235||mJ<br>mJ<br>mJ| |ターンオフスイッチング損失<br>Turn-offenergylossperpulse|IC= 1800 A, VCE= 600 V, Lσ= 30 nH<br>du/dt = 2350 V/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGoff= 0,82Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||210<br>260<br>290||mJ<br>mJ<br>mJ| |短絡電流<br>SCdata|VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 175°C<br>tP ≤10 µs,|ISC||6800||A| |ジャンクション・ヒートシンク間熱抵抗<br>Thermalresistance,junctiontoheatsink|IGBT部（１素子当り）/perIGBT<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||27,1|K/kW| |動作温度<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C| 2 V�3.1 2020-06-17 Datasheet ## FF1800R12IE5P **==> picture [86 x 38] intentionally omitted <==** ## Diode、インバータ�/�Diode,�Inverter 最大定格�/�Maximum�Rated�Values |最大定格/MaximumRatedValues||||||| |---|---|---|---|---|---|---| |ピーク繰返し逆電圧<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|||V| |連続DC電流<br>ContinuousDCforwardcurrent||IF|1800|||A| |ピーク繰返し順電流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|3600|||A| |電流二乗時間積<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|760<br>720|||kA²s<br>kA²s| |電気的特性/CharacteristicValues|||min.|typ.|max.|| |順電圧<br>Forwardvoltage|IF= 1800 A, VGE= 0 V<br>IF= 1800 A, VGE= 0 V<br>IF= 1800 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,90<br>1,75<br>1,70|2,35<br>2,20<br>2,15|V<br>V<br>V| |ピーク逆回復電流<br>Peakreverserecoverycurrent|IF= 1800 A, - diF/dt = 8700 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||810<br>1150<br>1300||A<br>A<br>A| |逆回復電荷量<br>Recoveredcharge|IF= 1800 A, - diF/dt = 8700 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||175<br>330<br>435||µC<br>µC<br>µC| |逆回復損失<br>Reverserecoveryenergy|IF= 1800 A, - diF/dt = 8700 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||79,0<br>145<br>190||mJ<br>mJ<br>mJ| |ジャンクション・ヒートシンク間熱抵抗<br>Thermalresistance,junctiontoheatsink|/Diode（１素子当り）/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||38,7|K/kW| |動作温度<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C| ## NTC-サーミスタ�/�NTC-Thermistor 電気的特性�/�Characteristic�Values |NTC-サーミスタ/NTC-Thermistor<br>|NTC-サーミスタ/NTC-Thermistor<br>|||||| |---|---|---|---|---|---|---| |電気的特性/CharacteristicValues|||min.|typ.|max.|| |定格抵抗値<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ| |R100の偏差<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |損失<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW| |B-定数<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-定数<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-定数<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| 適切なアプリケーションノートによる仕様 Specification�according�to�the�valid�application�note. 3 V�3.1 2020-06-17 Datasheet ## FF1800R12IE5P **==> picture [86 x 38] intentionally omitted <==** ## モジュール�/�Module |モジュール/Module||||||| |---|---|---|---|---|---|---| |絶縁耐圧<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0<br>|||kV| |ベースプレート材質<br>Materialofmodulebaseplate|||Cu|||| |内部絶縁<br>Internalisolation|基礎絶縁(クラス1,IEC61140)<br>basicinsulation(class1,IEC61140)||Al2O3|||| |沿面距離<br>Creepagedistance|連絡方法-ヒートシンク/terminaltoheatsink<br>連絡方法-連絡方法/terminaltoterminal||36,0<br>28,0<br>|||mm| |空間距離<br>Clearance|連絡方法-ヒートシンク/terminaltoheatsink<br>連絡方法-連絡方法/terminaltoterminal||21,0<br>19,0<br>|||mm| |相対トラッキング指数<br>Comperativetrackingindex||CTI||> 400||| ||||min.|typ.|max.|| |内部インダクタンス<br>Strayinductancemodule||LsCE||10||nH| |パワーターミナル・チップ間抵抗<br>Moduleleadresistance,terminals-chip|TH=25°C,/スイッチ/perswitch|RCC'+EE'<br>RAA'+CC'||0,10<br>0,09||mΩ| |保存温度<br>Storagetemperature||Tstg|-40||150|°C| |最大ベース・プレート動作温度<br>Maximumbaseplateoperationtemperature||TBPmax|||150|°C| |取り付けネジ締め付けトルク<br>Mountingtorqueformodulmounting|取り付けネジM5<br>適切なアプリケーションノートによるマウンティング<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm| |主端子ネジ締め付けトルク<br>Terminalconnectiontorque|取り付けネジM4<br>適切なアプリケーションノートによるマウンティング<br>ScrewM4-Mountingaccordingtovalidapplicationnote<br>取り付けネジM8<br>適切なアプリケーションノートによるマウンティング<br>ScrewM8-Mountingaccordingtovalidapplicationnote|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm| |質量<br>Weight||G||1400||g| Lagerung und Transport von Modulen mit TIM: siehe AN2012-07 Storage and shipment of modules with TIM: see AN2012-07 V�3.1 2020-06-17 Datasheet 4 FF1800R12IE5P **==> picture [86 x 38] intentionally omitted <==** 出力特性�IGBT-�インバータ�(Typical) **output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V 出力特性�IGBT-�インバータ�(Typical) **output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�175°C **==> picture [484 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 3600 3600<br>3300 T T vj vj = 25°C = 125 ° C 3300 V V GE GE = 20V = 15V<br>Tvj = 175°C VGE = 12V<br>VGE = 10V<br>3000 3000 VGE = 9V<br>VGE = 8V<br>2700 2700<br>2400 2400<br>2100 2100<br>1800 1800<br>1500 1500<br>1200 1200<br>900 900<br>600 600<br>300 300<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br> 伝達特性�IGBT-�インバータ�(Typical) **transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V スイッチング損失�IGBT-�インバータ�(Typical) **switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) VGE�=�±15�V,�RGon�=�0.82� Ω ,�RGoff�=�0.82� Ω ,�VCE�=�600�V **==> picture [487 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 3600 800<br>3300 T T vj vj = 25°C = 125 ° C EEonon, T, Tvjvj = 125°C = 175°C<br>Tvj = 175°C 700 EEoffoff, T, Tvjvj = 125°C = 175°C<br>3000<br>2700 600<br>2400<br>500<br>2100<br>1800 400<br>1500<br>300<br>1200<br>900 200<br>600<br>100<br>300<br>0 0<br>5 6 7 8 9 10 11 12 13 0 600 1200 1800 2400 3000 3600<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> V�3.1 2020-06-17 Datasheet 5 FF1800R12IE5P **==> picture [485 x 309] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =+15V,1 C =1800A,V CE =600V<br>1400 100<br>Eon, Tvj = 125°C ZthJH : IGBT<br>1300 E on , T vj = 175°C<br>1200 EEoff off , T, Tvj vj = 125°C = 175°C<br>1100 n/a Siti ati tah at<br>|_| Se<br>1000<br>10<br>900<br>See AEE} PT<br>Pt TTT ALTT<br>800<br>/ SS<br>700 / nm)<br>600<br>500<br>1<br>400<br>ff ee a nN<br>300 fo PE A<br>200 i: 1 2 3 4<br>ri[K/kW]: 1,03 10,4 11,1 4,57<br>100 τ i[s]: 0,0015 0,033 0,162 0,963<br>SEES ON<br>0 0,1<br>0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/kW]<br>E [mJ]<br>thJH<br>Z<br>**----- End of picture text -----**<br> **==> picture [483 x 318] intentionally omitted <==** **----- Start of picture text -----**<br> reverse bias safe operating area IGBT,Inverter (RBSOA) gate charge characteristic IGBT,Inverter (typical)<br>IC CE) VGE G)<br>VGE - ss V,R Goff =0.82 Ω ,T vj =175°C IC = 1800 A,T vj =25°C<br>4000 15<br>IICC, Modul, Chip VCC = 600V<br>12<br>3500 Ee | =<br>9<br>3000<br>6<br>2500<br>3<br>2000 0<br>-3<br>1500<br>-6<br>1000<br>-9 BARRE<br>500<br>-12<br>0 -15<br>0 200 400 600 800 1000 1200 1400 0 1 2 3 4 5 6 7 8 9<br>VCE [V] QG [µC]<br> [V]<br> [A]<br>IC VGE<br>**----- End of picture text -----**<br> 6 Datasheet 2020-06-17 FF1800R12IE5P IF =f(V F)) **==> picture [487 x 656] intentionally omitted <==** **----- Start of picture text -----**<br> F =f(V F)) Erec =fi(l F)<br>RGon G32 Ω ,V CE =600V<br>3600 240<br>3300 T T vj vj = 25°C = 125 ° C 220 E E rec rec , T , T vj vj = 125°C = 175 ° C<br>Tvj = 175°C oe<br>Zz<br>3000 200<br>2700 180<br>2400 / 160<br>/I /<br>2100 140<br>1800 120<br>1500 100<br>1200 80<br>/<br>900 60 /<br>/<br>600 40<br>4<br>Y<br>300 Lo “7 WA 20<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 0 600 1200 1800 2400 3000 3600<br>VF [V] IF [A]<br>At IY FY TIBR Diode, 4 /\—2 (Typical) IBA YE—-AYZ Diode, 1Y/N—-%<br>switching losses Diode, Inverter (typical) transient thermal impedance Diode, Inverter<br>rec =f(R G)) ZthJHthJH =f(t<br>F = 1800 A, V CE = 600 V 600 V V ®<br>220 100<br>Erec, Tvj = 125°C ZthJH : Diode<br>200 — Erec, Tvj = 175°C | |. | p—t it | PT TT<br>180 \ RE<br>160<br>140<br>\ a a<br>120<br>10<br>100<br>an N /<br>. A<br>80 SY Hi<br>><br>60 NNa ~ ™ /<br>40<br>i: 1 2 3 4<br>ri[K/kW]: 1,17 13,8 18 5,73<br>20 τ i[s]: 0,000935 0,0281 0,146 1,1<br>0 PEE ET TToe 1 ||AUN o-oo<br>0 1 2 3 4 5 6 7 8 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [A]<br>IF E [mJ]<br> [K/kW]<br>E [mJ]<br>thJH<br>Z<br>**----- End of picture text -----**<br> **==> picture [263 x 17] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f(R G)) ZthJHthJH<br>IF = 1800 A, V CE = 600 V 600 V V<br>**----- End of picture text -----**<br> Datasheet 7 2020-06-17 FF1800R12IE5P **==> picture [86 x 38] intentionally omitted <==** ## NTC-サーミスタ�サーミスタの温度特性�� **NTC-Thermistor-temperature�characteristic�(typical)** R�=�f�(T) **==> picture [240 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>Rtyp<br>10000<br>1000<br>100<br>10<br>0 25 50 75 100 125 150 175<br>TNTC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br> 8 V�3.1 2020-06-17 Datasheet FF1800R12IE5P **==> picture [86 x 38] intentionally omitted <==** ## 回路図�/�Circuit�diagram **==> picture [99 x 145] intentionally omitted <==** ## パッケージ概要�/�Package�outlines **==> picture [490 x 347] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>screwing depth (247) m 0,35 A D E 26<br>max. 8mm 8x 8x (M4) 3 c0,1<br>8x max. (2)<br>E<br>36,5 recommended design height<br>m q0,35 A B C m 1,2 A D E<br>8x<br>2,50,50 Y X<br>screwing depthmax. 16mm 8x 8x max. (3)<br>36,5 recommended design heightm 0,8 A D E<br>14x q5,5 c0,1 m q0,5 A D E 8x<br>B 14x 38,25<br>D<br>117 8x (M8) m q1,8 A D E<br>m q0,35 A B C 8x<br>M 8x<br>A m q0,4 CZ A 8x q5<br>250 c1 ~ 8x<br>36,5<br>18,2 K<br>Y<br>0 X H ' K<br>g 0,2 A M-M<br>H<br>16,7<br>restricted area for Thermal Interface Material<br>36,5<br>232<br>Dimension in mounted condition ISO 10579<br>Terminal heights measurement at the end of bending radius<br>60 c,<br>(86) 89<br>36,5<br>5,5)<br>q( 117 111 103 93 92 78 59 53 41 39 25 14 4 0 33 39 70 78 107 117<br>124,7 103 92 53 25 14 0<br>60<br>**----- End of picture text -----**<br> 9 V�3.1 2020-06-17 Datasheet ## Trademarks ## 重要事項 ーズ（以下、「インフィニオン」）はここに、第三者の知的所有権の不侵害の保証を含むがこれに限らず、あらゆる種類の一切の保証およ び責任を否定いたします。 さらに、本文書に記載された一切の情報は、お客様の用途におけるお客様の製品およびインフィニオン製品の一切の使用に関し、本文 書に記載された義務ならびに一切の関連する法的要件、規範、および基準をお客様が遵守することを条件としています。 本文書に含まれるデータは、技術的訓練を受けた従業員のみを対象としています。本製品の対象用途への適合性、およびこれら用途 に関連して本文書に記載された製品情報の完全性についての評価は、お客様の技術部門の責任にて実施してください。 本製品、技術、納品条件、および価格についての詳しい情報は、インフィニオンの最寄りの営業所までお問い合わせください （www.infineon.com）。 ## 警告事項 技術的要件に伴い、製品には危険物質が含まれる可能性があります。当該種別の詳細については、インフィニオンの最寄りの営業所ま でお問い合わせください。 インフィニオンの正式代表者が署名した書面を通じ、インフィニオンによる明示の承認が存在する場合を除き、インフィニオンの製品は、 当該製品の障害またはその使用に関する一切の結果が、合理的に人的傷害を招く恐れのある一切の用途に使用することはできない こと予めご了承ください ## WARNINGS
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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