FDPC4044

## **FDPC4044** 

## **Common Drain N-Channel PowerTrench[®] MOSFET** 

## **30 V, 27 A, 4.3 m** Ω 

## **General Description** 

This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow. FDPC4044 combines ON Semiconductor’s advanced PowerTrench[®] process with state of the art  packaging process to minimize the on-state resistance. 

## **Features** 

Max rS1S2(on)  = 4.3 mΩ at VGS = 10 V, IS1S2 = 27 A Max rS1S2(on)  = 6.4 mΩ at VGS = 4.5 V, IS1S2  = 23 A Pakage size/height: 3.3 x 3.3 x 0.8 mm 

Low inductance packaging shortens rise/fall times, resulting in lower switching losses 

## **Applications** 

MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing 

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Battery management<br>inductance and reduced switch node ringing<br>Load switch<br>Battery protection<br>S1<br>S2 Pin 1<br>S2<br>S2 S1 S1 G1<br>S1<br>G2<br>D2<br>D1<br>G1 Pin 1 G2<br>Bottom Top<br>S2<br>Power Clip 33<br>**----- End of picture text -----**<br>


RoHS Compliant 

## **MOSFET Maximum Ratings** TA = 25 °C unless otherwise noted 

|**Symbol**<br>**Parameter**|||**Ratings**||**Units**|
|---|---|---|---|---|---|
|VS1S2<br>Source1 to Source2 Voltage|||30||V|
|VGS<br>Gate to Source Voltage|(Note 3)||±20||V|
|IS1S2<br>Source1 to Source2 Current    -Continuous    TA= 25 °C<br>-Pulsed|(Note 1a)<br> (Note 2)||27<br>120||A|
|PD<br>Power Dissipation<br>TA= 25 °C<br>Power Dissipation<br>TA= 25 °C|= 25 °C<br> (Note 1a)<br> (Note 1b)||2.7<br>1||W|
|TJ, TSTG<br>Operatingand Storage Junction Temperature Range|||-55 to +150||°C|
|**Thermal Characteristics**||||||
|**Package Marking and Ordering Information**<br>RθJA<br>Thermal Resistance, Junction to Ambient<br> (Note 1a)<br>47<br>°C/W<br>RθJA<br>Thermal Resistance, Junction to Ambient<br> (Note 1b)<br>127<br>~~ye_~~||||||
|**Device Marking**<br>**Device**<br>**Package**<br>**Reel Size**<br>**Tape Width**<br>**Quantity**<br>40CF<br>FDPC4044<br>Power Clip33<br>13 ”<br>12 mm<br>3000 units<br>~~ee~~||||||



©2013 Semiconductor Components Industries, LLC August-2017, Rev.3 

Publication Order Number: FDPC4044/D 

## **Electrical Characteristics** TJ = 25 °C unless otherwise noted 

**Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics** Zero Gate Voltage Source1 to Source2 IS1S2 Current VS1S2 = 24 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = 20 V, VS1S2 = 0 V 100 nA **On Characteristics** VGS(th) Gate to Source Threshold Voltage VGS = VS1S2, IS1S2 = 250 μA 1.2 1.5 3 V VGS =10 V, IS1S2 = 27 A 3.2 4.3 r Static Source1 to Source2 On Resistance VGS = 4.5 V, IS1S2 = 23 A 4.6 6.4 mΩ S1S2(on) VGS = 10 V, IS1S2 = 27 A, 4.5 7 TJ = 125[o] C gFS Forward Transconductance VS1S2 = 10 V, IS1S2 = 27 A 150 S **Dynamic Characteristics** CCiossss InOutput Caput Capacitancepacitance f = 1 MHzVS1S2 = 15 V, VGS = 0 V, 2295627 3215880 ppFF Crss Reverse Transfer Capacitance 66 95 pF **Switching Characteristics** td(on) Turn-On Delay Time 8.5 17 ns ~~OO~~ tr Rise Time VS1S2 = 15 V, IS1S2 = 27 A, 4.8 10 ns td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 32 52 ns tf Fall Time 5.2 10 ns QQggs Total Gate CharGate to Source1 Gate Charge ge VVS1S2G1S1 = 15 V, I = 10 V, VS1S2G2S2 = 27 A, = 0 V 5.735 49 nCnC Qgd Gate to Source2 “Miller” Charge 4.7 nC **Source1 to Source2 Diode Characteristics** Ifss Maximum Continuous Source1 to Source2 Diode Forward Current 1 A ~~ee~~ Vfss Source1 to Source2 Diode Forward       Voltage IVfssG1S1 = 27 A   = 0 V, VG2S2 = 4.5 V,             (Note 2) 0.8 1.2 V **Notes:** 1. RθJA is determined with the device mounted on a 1 in[2] pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b.127  °C/W when mounted on  a a. 47 °C/W when mounted   on minimum pad of 2 oz copper. a 1 in[2 ] pad of  2 oz  copper. 

2. Pulse Test: Pulse Width < 300 us, Duty cycle < 2.0%. 

3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. 

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**Typical Characteristics** TJ = 25 °C unless otherwise noted 

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120 120<br>VG1S1 = 10 V VGS = 10 V<br>VG1S1VG1S1 =  = 4 V4.5 V VGS =  4.5 V<br>80 VG1S1 = 3.5 V 80 VGS = 4 V<br>VGS = 3.5 V<br>VG1S1 = 3 V<br>40 40<br>PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX μ s VGS =  3 V<br>VG2S2 = 4.5 V PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX μ s<br>0 0<br>0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0<br>VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)<br>Figure 1.  On-Region Characteristics Figure 2.  On-Region Characteristics<br>3 4<br>VG1S1 = 3 V 3 VGS =  3 V<br>2<br>VG1S1 = 3.5V VG1S1 = 4 V VG1S1 = 4.5 V 2 VGS = 3.5 V V GS  = 4 V<br>1<br>VGS = 4.5 V<br>PULSE DURATION = 80  μ s VG1S1 = 10 V 1<br>DUTY CYCLE = 0.5% MAXVG2S2 = 4.5 V PULSE DURATION = 80DUTY CYCLE = 0.5% MAX  μ s VGS =  10 V<br>0 0<br>0 40 80 120 0 40 80 120<br>IS1S2, SOURCE1 TO SOURCE2 CURRENT (A) IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)<br>Figure 3.  Normalized On-Resistance vs Source1          Figure 4.  Normalized On-Resistance vs Source1<br>to Source2 Current and Gate Voltage  to Source2 Current and Gate Voltage<br>1.6 20<br>IS1S2 = 27 A PULSE DURATION = 80  μ s<br>VGS = 10 V DUTY CYCLE = 0.5% MAX<br>1.4<br>15<br>IS1S2 = 27 A<br>1.2<br>10<br>1.0<br>TJ = 125  [o] C<br>5<br>0.8<br>TJ = 25  [o] C<br>0.6 0<br>-75 -50 -25 0 25 50 75 100 125 150 2 4 6 8 10<br>TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 5.  Normalized  On- Resistance              Figure 6.   On-Resistance vs  Gate to<br>vs Junction Temperature Source Voltage<br>SOURCE1 TO SOURCE2 CURRENT (A)IS1S2,  ISOURCE1 TO SOURCE2 CURRENT (A)S1S2,<br>NORMALIZED NORMALIZED<br>SOURCE1 TO SOURCE2 ON-RESISTANCE SOURCE1 TO SOURCE2 ON-RESISTANCE<br>) Ω<br>m<br>SOURCE1 TO   (<br>,<br>NORMALIZED<br>rS1S2(on)<br>SOURCE2 ON-RESISTANCE<br> SOURCE1 TO SOURCE2 ON-RESISTANCE<br>**----- End of picture text -----**<br>


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## **Typical Characteristics** TJ = 25 °C unless otherwise noted 

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120 100<br>PULSE DURATION = 80  μ s VG1S1 = 0 V, VG2S2 = 4.5 V<br>DUTY CYCLE = 0.5% MAX<br>VS1S2 = 5 V 10<br>80 T J  = 150 [o] C<br>TJ = 150  [o] C 1<br>TJ = 25  [o] C 0.1<br>40 TJ = 25 [ o] C<br>0.01<br>TJ = -55  [o] C TJ = -55  [o] C<br>0 0.001<br>1 2 3 4 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VGS, GATE TO SOURCE VOLTAGE (V) Vfss, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 7.  Transfer Characteristics Figure 8.    Source1  to  Source2  Diode<br>Forward Voltage vs Source Current<br>10 10000<br>vG2S2 = 0 V, IS1S2 = 27 A<br>Ciss<br>8<br>VS1S2 = 10 V<br>1000<br>6 Coss<br>VS1S2 = 15 V<br>4<br>VS1S2 = 20 V 100 C rss<br>2<br>f = 1 MHz<br>VGS = 0 V<br>0 10<br>0 10 20 30 40 0.1 1 10 30<br>Qg, GATE CHARGE (nC) VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)<br>Figure 9.  Gate Charge Characteristics Figure 10. Capacitance vs Source1<br>to Source2 Voltage<br>200 2000<br>100 1000 SINGLE PULSE<br>100 us R θ JA = 127  [o] C/W<br>10 T A = 25  [o] C<br>100<br>1 1 ms<br>THIS AREA IS  10 ms<br>LIMITED BY r 100 ms 10<br>DS(on)<br>0.1 1 s<br>SINGLE PULSE<br>10 s<br>TJ = MAX RATED DC 1<br>0.01 R θ JA = 127 [ o] C/W CURVE BENT TO<br>TA = 25  [o] C MEASURED DATA<br>0.001 0.1<br>0.01 0.1 1 10 100200 10-4 10-3 10-2 10-1 1 10 100 1000<br>VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V) t, PULSE WIDTH (sec)<br>Figure 11.  Forward Bias Safe     Figure 12.  Single  Pulse  Maximum<br>Operating Area Power Dissipation<br>CURRENT (A)<br>SOURCE1 TO SOURCE2 CURRENT (A),  , REVERSE SOURCE1 TO SOURCE2 Ifss<br>IS1S2<br>CAPACITANCE (pF)<br>, GATE1 TO SOURCE1 VOLTAGE (V)<br>G1S1<br>V<br>PEAK TRANSIENT POWER (W)<br>SOURCE1 TO SOURCE2 CURRENT (A),  P)(PK,<br>IS1S2<br>**----- End of picture text -----**<br>


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Typical Characteristics  TJ = 25 °C unless otherwise noted<br>2<br>DUTY CYCLE-DESCENDING ORDER<br>1<br>D = 0.5<br>   0.2<br>0.1<br>   0.1<br>   0.05 PDM<br>   0.02<br>   0.01<br>t1<br>0.01 SINGLE PULSE t2<br>R θ JA = 127  [o] C/W NOTES:DUTY FACTOR: D = t 1 /t 2<br>(Note 1b) PEAK T J  = P DM  x Z θJA  x R θJA  + T A<br>0.001<br>10-4 10-3 10-2 10-1 1 10 100 1000<br>t, RECTANGULAR PULSE DURATION (sec)<br>Figure 13.  Junction-to-Ambient Transient Thermal Response Curve<br>Z JA θ<br>IMPEDANCE,<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br>


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## **Dimensional Outline and Pad Layout** 

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