FDME1024NZT

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## **FDME1024NZT** 

## **Dual N-Channel PowerTrench[®] MOSFET 20 V, 3.8 A, 66 m** Ω 

## **Features** 

Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A 

Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A Low profile:  0.55 mm maximum in the new package MicroFET 1.6x1.6 **Thin** 

Free from halogenated compounds and antimony oxides HBM ESD protection level > 1600 V (Note 3) RoHS Compliant 

## **General Description** 

This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. 

The MicroFET 1.6x1.6 **Thin** package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications. 

## **Applications** 

Baseband Switch 

Load Switch 

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D2<br>G1<br>S1 D2<br>Pin 1<br>D1<br>S2<br>G2<br>D1<br>**----- End of picture text -----**<br>


## **BOTTOM** 

## **TOP** 

## **MicroFET 1.6x1.6 Thin** 

**MOSFET Maximum Ratings** TA = 25 °C unless otherwise noted 

|**Symbol**|**Parameter**||||**Ratings**|**Ratings**|||**Units**|
|---|---|---|---|---|---|---|---|---|---|
|VDS|Drain to Source Voltage|||||20|||V|
|VGS|Gate to Source Voltage|||||±8|||V|
|ID|Drain Current   -Continuous                           TA= 25 °C<br>-Pulsed|= 25 °C|= 25 °C(Note 1a)|||3.8<br>6|||A|
|PD|Power Dissipation for Single Operation        TA= 25 °C<br>Power Dissipation for Single Operation        TA= 25 °C|= 25 °C<br>= 25 °C|= 25 °C(Note 1a)<br>= 25 °C(Note 1b)|||1.4<br>0.6|||W|
|TJ, TSTG|Operatingand Storage Junction Temperature Range||||-55 to +150|-55 to +150|||°C|
|**Thermal Characteristics**||||||||||
|RθJA|Thermal Resistance, Junction to Ambient(Single Operation)||(Note 1a)|||90|||°C/W|
|RθJA|Thermal Resistance, Junction to Ambient(Single Operation)||(Note 1b)|||195||||
|**Package Marking and Ordering Information**||||||||||
|**Device Marking**<br>**Device**<br>**Package**|||**Reel Size**||**Tape Width**|||**Quantity**||
|4T|FDME1024NZT<br>MicroFET 1.6x1.6**Thin**||7 ’’||8 mm|||5000 units||



## **Thermal Characteristics** 

## **Package Marking and Ordering Information** 

www.fairchildsemi.com 

©2010 Fairchild Semiconductor Corporation FDME1024NZT Rev.C1 

**1** 

**Electrical Characteristics** TJ = 25 °C unless otherwise noted 

|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= 250μA, VGS= 0 V<br>20<br>V<br>ΔBVDSS<br>ΔTJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250μA, referenced to 25 °C<br>16<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 16 V, VGS = 0 V<br>1<br>μA<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±8 V, VDS = 0 V<br>±10<br>μA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= 250μA<br>0.4<br>0.7<br>1.0<br>V<br>ΔVGS(th)<br>ΔTJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= 250μA, referenced to 25 °C<br>-3<br>mV/°C<br>rDS(on)<br>Static Drain to Source On Resistance<br>VGS= 4.5 V,  ID= 3.4 A<br>55<br>66<br>mΩ<br>VGS= 2.5 V,  ID= 2.9 A<br>68<br>86<br>VGS= 1.8 V,  ID= 2.5 A<br>85<br>113<br>VGS= 1.5 V,  ID= 2.1 A<br>106<br>160<br>VGS= 4.5 V,  ID= 3.4 A, TJ= 125 °C<br>76<br>112<br>gFS<br>Forward Transconductance<br>VDD= 4.5 V,  ID= 3.4 A<br>9<br>S<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= 10 V, VGS= 0 V,<br>f = 1 MHz<br>225<br>300<br>pF<br>Coss<br>Output Capacitance<br>40<br>55<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>25<br>40<br>pF<br>**Switching Characteristics**<br>~~a~~<br>~~DO~~<br>~~— fo es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~eG~~|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= 250μA, VGS= 0 V<br>20<br>V<br>ΔBVDSS<br>ΔTJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250μA, referenced to 25 °C<br>16<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 16 V, VGS = 0 V<br>1<br>μA<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±8 V, VDS = 0 V<br>±10<br>μA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= 250μA<br>0.4<br>0.7<br>1.0<br>V<br>ΔVGS(th)<br>ΔTJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= 250μA, referenced to 25 °C<br>-3<br>mV/°C<br>rDS(on)<br>Static Drain to Source On Resistance<br>VGS= 4.5 V,  ID= 3.4 A<br>55<br>66<br>mΩ<br>VGS= 2.5 V,  ID= 2.9 A<br>68<br>86<br>VGS= 1.8 V,  ID= 2.5 A<br>85<br>113<br>VGS= 1.5 V,  ID= 2.1 A<br>106<br>160<br>VGS= 4.5 V,  ID= 3.4 A, TJ= 125 °C<br>76<br>112<br>gFS<br>Forward Transconductance<br>VDD= 4.5 V,  ID= 3.4 A<br>9<br>S<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= 10 V, VGS= 0 V,<br>f = 1 MHz<br>225<br>300<br>pF<br>Coss<br>Output Capacitance<br>40<br>55<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>25<br>40<br>pF<br>**Switching Characteristics**<br>~~a~~<br>~~DO~~<br>~~— fo es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~eG~~|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= 250μA, VGS= 0 V<br>20<br>V<br>ΔBVDSS<br>ΔTJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250μA, referenced to 25 °C<br>16<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 16 V, VGS = 0 V<br>1<br>μA<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±8 V, VDS = 0 V<br>±10<br>μA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= 250μA<br>0.4<br>0.7<br>1.0<br>V<br>ΔVGS(th)<br>ΔTJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= 250μA, referenced to 25 °C<br>-3<br>mV/°C<br>rDS(on)<br>Static Drain to Source On Resistance<br>VGS= 4.5 V,  ID= 3.4 A<br>55<br>66<br>mΩ<br>VGS= 2.5 V,  ID= 2.9 A<br>68<br>86<br>VGS= 1.8 V,  ID= 2.5 A<br>85<br>113<br>VGS= 1.5 V,  ID= 2.1 A<br>106<br>160<br>VGS= 4.5 V,  ID= 3.4 A, TJ= 125 °C<br>76<br>112<br>gFS<br>Forward Transconductance<br>VDD= 4.5 V,  ID= 3.4 A<br>9<br>S<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= 10 V, VGS= 0 V,<br>f = 1 MHz<br>225<br>300<br>pF<br>Coss<br>Output Capacitance<br>40<br>55<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>25<br>40<br>pF<br>**Switching Characteristics**<br>~~a~~<br>~~DO~~<br>~~— fo es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~eG~~|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= 250μA, VGS= 0 V<br>20<br>V<br>ΔBVDSS<br>ΔTJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250μA, referenced to 25 °C<br>16<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 16 V, VGS = 0 V<br>1<br>μA<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±8 V, VDS = 0 V<br>±10<br>μA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= 250μA<br>0.4<br>0.7<br>1.0<br>V<br>ΔVGS(th)<br>ΔTJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= 250μA, referenced to 25 °C<br>-3<br>mV/°C<br>rDS(on)<br>Static Drain to Source On Resistance<br>VGS= 4.5 V,  ID= 3.4 A<br>55<br>66<br>mΩ<br>VGS= 2.5 V,  ID= 2.9 A<br>68<br>86<br>VGS= 1.8 V,  ID= 2.5 A<br>85<br>113<br>VGS= 1.5 V,  ID= 2.1 A<br>106<br>160<br>VGS= 4.5 V,  ID= 3.4 A, TJ= 125 °C<br>76<br>112<br>gFS<br>Forward Transconductance<br>VDD= 4.5 V,  ID= 3.4 A<br>9<br>S<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= 10 V, VGS= 0 V,<br>f = 1 MHz<br>225<br>300<br>pF<br>Coss<br>Output Capacitance<br>40<br>55<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>25<br>40<br>pF<br>**Switching Characteristics**<br>~~a~~<br>~~DO~~<br>~~— fo es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~eG~~|**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min**<br>**Typ**<br>**Max**<br>**Units**<br>**Off Characteristics**<br>BVDSS<br>Drain to Source Breakdown Voltage<br>ID= 250μA, VGS= 0 V<br>20<br>V<br>ΔBVDSS<br>ΔTJ<br>Breakdown Voltage Temperature<br>Coefficient<br>ID= 250μA, referenced to 25 °C<br>16<br>mV/°C<br>IDSS<br>Zero Gate Voltage Drain Current<br>VDS= 16 V, VGS = 0 V<br>1<br>μA<br>IGSS<br>Gate to Source Leakage Current<br>VGS= ±8 V, VDS = 0 V<br>±10<br>μA<br>**On Characteristics**<br>VGS(th)<br>Gate to Source Threshold Voltage<br>VGS= VDS,  ID= 250μA<br>0.4<br>0.7<br>1.0<br>V<br>ΔVGS(th)<br>ΔTJ<br>Gate to Source Threshold Voltage<br>Temperature Coefficient<br>ID= 250μA, referenced to 25 °C<br>-3<br>mV/°C<br>rDS(on)<br>Static Drain to Source On Resistance<br>VGS= 4.5 V,  ID= 3.4 A<br>55<br>66<br>mΩ<br>VGS= 2.5 V,  ID= 2.9 A<br>68<br>86<br>VGS= 1.8 V,  ID= 2.5 A<br>85<br>113<br>VGS= 1.5 V,  ID= 2.1 A<br>106<br>160<br>VGS= 4.5 V,  ID= 3.4 A, TJ= 125 °C<br>76<br>112<br>gFS<br>Forward Transconductance<br>VDD= 4.5 V,  ID= 3.4 A<br>9<br>S<br>**Dynamic Characteristics**<br>Ciss<br>Input Capacitance<br>VDS= 10 V, VGS= 0 V,<br>f = 1 MHz<br>225<br>300<br>pF<br>Coss<br>Output Capacitance<br>40<br>55<br>pF<br>Crss<br>Reverse Transfer Capacitance<br>25<br>40<br>pF<br>**Switching Characteristics**<br>~~a~~<br>~~DO~~<br>~~— fo es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~eG~~|
|---|---|---|---|---|
|td(on)<br>Turn-On DelayTime|4.5<br>10||ns||
|tr<br>Rise Time|VDD= 10 V, ID= 1 A,<br>2<br>10||ns||
|td(off)<br>Turn-Off DelayTime|VGS= 4.5 V, RGEN= 6Ω<br>15<br>27||ns||
|tf<br>Fall Time|1.7<br>10||ns||
|Qg<br>Total Gate Charge<br>Qgs<br>Gate to Source Gate Charge<br>Qgd<br>Gate to Drain “Miller” Charge|VDD= 10 V, ID= 3.4 A,<br>VGS= 4.5 V<br>3<br>4.2<br>0.4<br>0.6||nC<br>nC<br>nC||
|**Drain-Source Diode Characteristics**|||||
|VSD<br>Source to Drain Diode  Forward Voltage|VGS = 0 V, IS = 0.9 A(Note 2)<br>0.7<br>1.2||V||
|trr<br>Reverse RecoveryTime<br>Qrr<br>Reverse RecoveryCharge|IF= 3.4 A, di/dt = 100 A/μs<br>8.5<br>17<br>1.4<br>10||ns<br>nC||



NOTES: 

1. RθJA is determined with the device mounted on a 1 in[2] pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 

a. 90 °C/W when mounted   on b. 195 °C/W when mounted on  a a 1 in[2  ] pad of  2 oz  copper. minimum pad of 2 oz copper. 

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 

3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. 

FDME1024NZT Rev.C1 

www.fairchildsemi.com 

**2** 

**Typical Characteristics** TJ = 25 °C unless otherwise noted 

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6 3.0<br>VVGSGS = 3 V = 4.5 V PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX μ s<br>VGS = 2.5 V 2.5<br>VGS = 1.8 V<br>4<br>2.0 V GS  = 1.5 V<br>VGS = 1.5 V<br>VGS = 1.8 V<br>1.5<br>2 VGS = 2.5 V VGS = 3 V<br>PULSE DURATION = 80  μ s 1.0<br>DUTY CYCLE = 0.5% MAX VGS = 4.5 V<br>0 0.5<br>0.0 0.5 1.0 1.5 0 2 4 6<br>VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 1.  On-Region Characteristics Figure 2.  Normalized On-Resistance<br>vs Drain Current and Gate Voltage<br>1.6 300<br>ID = 3.4 A PULSE DURATION = 80  μ s<br>1.4 VGS = 4.5 V 250 DUTY CYCLE = 0.5% MAX<br>ID = 3.4 A<br>200<br>1.2<br>150<br>1.0 TJ = 125  [o] C<br>100<br>0.8<br>50<br>TJ = 25  [o] C<br>0.6 0<br>-75 -50 -25 0 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>TJ, JUNCTION TEMPERATURE ( [o] C) VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 3.  Normalized  On- Resistance                                         Figure 4.   On-Resistance vs  Gate to<br>vs Junction Temperature Source Voltage<br>6 10<br>PULSE DURATION = 80  μ s VGS = 0 V<br>DUTY CYCLE = 0.5% MAX<br>VDS = 5 V 1<br>4 TJ = 150  [o] C<br>0.1 TJ = 25 [ o] C<br>TJ = 150  [o] C<br>2<br>TJ = 25  [o] C 0.01 TJ = -55 [o] C<br>TJ = -55  [o] C<br>0 0.001<br>0.0 0.5 1.0 1.5 2.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 5.  Transfer Characteristics Figure 6.    Source to Drain  Diode<br>Forward Voltage vs Source Current<br>NORMALIZED<br>DRAIN CURRENT (A)<br>,<br>ID<br>DRAIN TO SOURCE ON-RESISTANCE<br>)<br>Ω<br>m<br>(<br>DRAIN TO<br>NORMALIZED rDS(on),<br>SOURCE ON-RESISTANCE<br> DRAIN TO SOURCE ON-RESISTANCE<br>, DRAIN CURRENT (A)<br>ID<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


FDME1024NZT Rev.C1 

www.fairchildsemi.com 

**3** 

**Typical Characteristics** TJ = 25 °C unless otherwise noted 

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4.5 500<br>ID = 3.4 A Ciss<br>VDD = 8 V<br>3.0<br>VDD = 10 V 100<br>VDD = 12 V C oss<br>1.5<br>f = 1 MHz C rss<br>VGS = 0 V<br>0.0 10<br>0 1 2 3 0.1 1 10 20<br>Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>Figure 7.  Gate Charge Characteristics Figure 8.  Capacitance   vs  Drain<br>to Source Voltage<br>10<br>10-1<br>100  μ s<br>10-2 VGS = 0 V<br>1 1 ms 10-3<br>10 ms 10-4<br>THIS AREA IS<br>LIMITED BY r DS(on) 100 ms 10-5 T J  = 125 [ o] C<br>0.1 SINGLE PULSE 1 s 10-6<br>TJ = MAX RATED 10 s<br>R θ JA = 195  [o] C/W DC 10-7<br>TA = 25  [o] C 10-8 TJ = 25  [o] C<br>0.01<br>0.1 1 10 50 10-9<br>0 3 6 9 12 15<br>VDS, DRAIN to SOURCE VOLTAGE (V)<br>VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 9.  Forward Bias Safe Operating Area    Figure 10.  Gate Leakage Current vs<br>Gate to Source Voltage<br>100<br>SINGLE PULSE<br>R θ JA  = 195  [o] C/W<br>TA = 25  [o] C<br>10<br>1<br>0.5<br>10-4 10-3 10-2 10-1 1 10 100 1000<br>t, PULSE WIDTH (s)<br>Figure 11.  Single Pulse Maximum Power Dissipation<br>CAPACITANCE (pF)<br>, GATE TO SOURCE VOLTAGE (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>GATE LEAKAGE CURRENT (A)<br>,<br>Ig<br>, PEAK TRANSIENT POWER (W)<br>(PK)<br>P<br>**----- End of picture text -----**<br>


FDME1024NZT Rev.C1 

www.fairchildsemi.com 

**4** 

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Typical Characteristics  TJ = 25 °C unless otherwise noted<br>2<br>DUTY CYCLE-DESCENDING ORDER<br>1<br>D = 0.5<br>      0.2<br>      0.1<br>      0.05<br>      0.02 PDM<br>0.1<br>0.01<br>t 1<br>t 2<br>NOTES:<br>SINGLE PULSE DUTY FACTOR: D = t1/t2<br>0.01 R θ JA = 195  [o] C/W PEAK TJ = PDM x Z θJA  x R θJA  + TA<br>0.005<br>10-4 10-3 10-2 10-1 1 10 100 1000<br>t, RECTANGULAR PULSE DURATION (sec)<br>Figure 12.  Junction-to-Ambient Transient Thermal Response Curve<br>Z JA θ<br>IMPEDANCE,<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br>


FDME1024NZT Rev.C1 

www.fairchildsemi.com 

**5** 

## **Dimensional Outline and Pad Layout** 

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FDME1024NZT Rev.C1 

www.fairchildsemi.com 

**6** 

## **TRADEMARKS** 

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 

AccuPower™ F-PFS™ Power-SPM™ ®* Auto-SPM™ FRFET[®] PowerTrench[®] [ GENERALSYSTEM Build it Now™ Global Power Resource[SM] PowerXS™ The Power Franchise[®] CorePLUS™ Green FPS™ Programmable Active Droop™ 0 ® CorePOWER™ Green FPS™ e-Series™ QFET[®] wer _CROSSVOLT_ ™ G _max_ ™ QS™ Pave CTL™ GTO™ Quiet Series™ TinyBoost™ Current Transfer Logic™DEUXPEED[®] IntelliMAX™ISOPLANAR™ RapidConfigure™™ TinyBuck™TinyCalc™ Dual Cool™ MegaBuck™ TinyLogicTINYOPTO™[®] EcoSPARK[®] MICROCOUPLER™ Saving our world, 1mW/W/kW at a time™ EfficentMax™ MicroFET™ SignalWise™ TinyPower™ ESBC™ MicroPak™ SmartMax™ TinyPWM™ ® MicroPak2™ SMART START™ TinyWire™TriFault Detect™ MillerDrive™ SPM[®] TRUECURRENT™* FairchildFairchild Semiconductor[®][®] MotionMax™Motion-SPM™ STEALTH™SuperFET™ μSerDes™ TZ, FACT Quiet Series™ OptiHiT™ SuperSOT™-3 FACT[®] OPTOLOGIC[®] SuperSOT™-6 1Z.... FAST[®] OPTOPLANAR[®] SuperSOT™-8 UHC[®] FastvCore™ ® SupreMOS™ Ultra FRFET™ FETBench™ SyncFET™ UniFET™ FlashWriter[® ] * PDP SPM™ Sync-Lock™ VCX™VisualMax™ FPS™ XS™ 

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 

## **DISCLAIMER** 

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 

## **LIFE SUPPORT POLICY** 

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 

As used here in: 

1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. 

## **ANTI-COUNTERFEITING POLICY** 

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. 

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. 

## **PRODUCT STATUS DEFINITIONS** 

## **Definition of Terms** 

|**Definition of Terms**|||
|---|---|---|
|**Datasheet Identification**|**Product Status**|**Definition**|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications<br>may change in any manner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later<br>date. Fairchild Semiconductor reserves the right to make changes at any time without<br>notice to improve design.|
|No Identification Needed|Full Production|Datasheet contains final specifications. Fairchild Semiconductor reserves the right to<br>make changes at any time without notice to improve the design.|
|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild<br>Semiconductor. The datasheet is for reference information only.|



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