DMN6040SSDQ-13

**DMN6040SSDQ** @. [ **DUAL N-CHANNEL ENHANCEMENT MODE MOSFET** 

## **Product Summary** 

|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|
|---|---|---|
||||
|**V(BR)DSS**|**RDS(ON)Max**|**ID**<br>**TA = +25°C**|
|60V|40mΩ @ VGS= 10V|5.0A|
||55mΩ @ VGS= 4.5V|4.4A|



## **Features and Benefits** 

- Low  Input Capacitance 

- Low On-Resistance 

- Fast Switching Speed 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

- **PPAP Capable (Note 4)** 

## **Description and Applications** 

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. 

## **Mechanical Data** 

   - Case: SO-8 

   - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity: Level 1 per J-STD-020 

- DC-DC Converters 

- Power Management Functions 

- Backlighting 

- Terminal Connections: See Diagram 

- Terminals: Finish – Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 at 

- Weight: 0.074 grams (Approximate) 

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SO-8 S1 =a TT D1 D1 D2<br>G1 D1<br>S2 co TT D2 G1 G2<br>cr TT<br>G2 mn = D2<br>S1 S2<br>Top View  Top View<br>Pin Configuration  Equivalent Circuit<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 5) 

|**Ordering Informationg Information Information** (Note 5)|||
|---|---|---|
|**Part Number**|**Case**|**Packaging**|
|DMN6040SSDQ-13|SO-8|2,500/Tape &Reel|



- Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

   2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

   3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

   4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html 

   5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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8 5<br>      = Manufacturer’s Marking<br>N6040SD = Product Type Marking Code<br>YYWW = Date Code Marking<br>N6040SD YY = Year (ex: 16 = 2016)<br>WW = Week (01 – 53)<br>YY WW<br>1 4<br>O. Lt} . LI  . Lo .<br>**----- End of picture text -----**<br>


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DMN6040SSDQ Document number: DS38509 Rev. 2 - 2 

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**DMN6040SSDQ** 

## **Maximum Ratings** (@TA = +25°C unless otherwise specified) 

|||||||
|---|---|---|---|---|---|
|**Characteristic**|||**Symbol**|**Value**|**Units**|
|Drain-Source Voltage|||VDSS|60|V|
|Gate-Source Voltage|||VGSS|±20|V|
|Continuous Drain Current (Note 7) VGS= 10V|Steady<br>State|TA= +25°C<br>TA= +70°C|ID|5.0<br>4.1|A|
||t<10s|TA= +25°C<br>TA= +70°C|ID|6.6<br>5.3|A|
|Maximum BodyDiode Forward Current(Note 7)|||IS|2.5|A|
|Pulsed Drain Current(10µs Pulse,DutyCycle = 1%)|||IDM|30|A|
|Pulsed BodyDiode Forward Current(10μspulse,dutycycle = 1%)|||ISM|30|A|
|Avalanche Current(Note 8)L = 0.1mH|||IAS|14.2|A|
|Avalanche Energy (Note 8)L = 0.1mH|||EAS|10|mJ|



## **Thermal Characteristics** (@TA = +25°C unless otherwise specified) 

|**Thermal Characteristics **(@TA = +25°C unless otherwise specified)@TA = +25°C unless otherwise specified)A = +25°C unless otherwise specified)= +25°C unless otherwise specified)|**Thermal Characteristics **(@TA = +25°C unless otherwise specified)@TA = +25°C unless otherwise specified)A = +25°C unless otherwise specified)= +25°C unless otherwise specified)||||
|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Value**|**Units**|
|Total Power Dissipation (Note 6)|TA= +25°C|PD|1.3|W|
||TA= +70°C||0.8||
|Thermal Resistance, Junction to Ambient (Note 6)|Steady State|RθJA|102|°C/W|
||t<10s||61||
|Total Power Dissipation (Note 7)|TA= +25°C|PD|1.7|W|
||TA= +70°C||1.1||
|Thermal Resistance, Junction to Ambient (Note 7)|Steady State|RθJA|75|°C/W|
||t<10s||50||
|Thermal Resistance,Junction to Case(Note 7)||RθJC|14.5||
|Operatingand Storage Temperature Range||TJ,TSTG|-55 to +150|°C|



**Electrical Characteristics** (@TA = 25°C unless otherwise specified) 

|**Electrical Characteristics** (@TA = 25°C unless otherwise specified)@TA = 25°C unless otherwise specified)A = 25°C unless otherwise specified)= 25°C unless otherwise specified)|**Electrical Characteristics** (@TA = 25°C unless otherwise specified)@TA = 25°C unless otherwise specified)A = 25°C unless otherwise specified)= 25°C unless otherwise specified)|**Electrical Characteristics** (@TA = 25°C unless otherwise specified)@TA = 25°C unless otherwise specified)A = 25°C unless otherwise specified)= 25°C unless otherwise specified)|**Electrical Characteristics** (@TA = 25°C unless otherwise specified)@TA = 25°C unless otherwise specified)A = 25°C unless otherwise specified)= 25°C unless otherwise specified)|**Electrical Characteristics** (@TA = 25°C unless otherwise specified)@TA = 25°C unless otherwise specified)A = 25°C unless otherwise specified)= 25°C unless otherwise specified)|**Electrical Characteristics** (@TA = 25°C unless otherwise specified)@TA = 25°C unless otherwise specified)A = 25°C unless otherwise specified)= 25°C unless otherwise specified)|**Electrical Characteristics** (@TA = 25°C unless otherwise specified)@TA = 25°C unless otherwise specified)A = 25°C unless otherwise specified)= 25°C unless otherwise specified)|
|---|---|---|---|---|---|---|
||||||||
|**Characteristic**<br>~~—~~|**Symbol**|**Min**<br>~~SS~~|**Typ**<br>~~SS~~|**Max**<br>~~SS~~|**Unit**<br>~~SS~~|**Test Condition**<br>~~SS~~|
|**OFF CHARACTERISTICS**(Note 9)<br>~~—~~<br>~~SS~~|||||||
|Drain-Source Breakdown Voltage<br>~~—~~|BVDSS|60<br>~~SS~~|<br>~~SS~~|<br>~~SS~~|V<br>~~SS~~|VGS= 0V,ID= 250µA<br>~~SS~~|
|Zero Gate Voltage Drain Current<br>~~—~~|IDSS|<br>~~SS~~|<br>~~SS~~|100<br>~~SS~~|nA<br>~~SS~~|VDS= 60V,VGS= 0V<br>~~SS~~|
|Gate-Source Leakage<br>~~—~~|IGSS|<br>~~SS~~|<br>~~SS~~|100<br>~~SS~~|nA<br>~~SS~~|VGS= ±20V,VDS= 0V<br>~~SS~~|
|**ON CHARACTERISTICS**(Note 9)<br>~~SE~~|||||||
|Gate Threshold Voltage<br>~~SE~~|VGS(TH)<br>~~SE~~|1<br>~~SE~~|<br>~~SE~~|3<br>~~SE~~|V<br>~~SE~~|VDS= VGS,ID= 250µA<br>~~SE~~|
|Static Drain-Source On-Resistance<br>~~SE~~|RDS(ON)<br>~~SE~~|<br>~~SE~~|30<br>~~SE~~|40<br>~~SE~~|mΩ<br>~~SE~~|VGS= 10V,ID= 4.5A<br>~~SE~~|
|||<br>~~SE~~|35<br>~~SE~~|55<br>~~SE~~||VGS= 4.5V,ID= 3.5A<br>~~SE~~|
|Forward Transfer Admittance||YFS|||4.5||S|VDS= 10V,ID= 4.3A|
|Diode Forward Voltage|VSD||0.7|1.2|V|VGS= 0V,IS= 1A|
|**DYNAMIC CHARACTERISTICS**(Note 10)|||||||
|Input Capacitance<br>~~ee~~|CISS<br>~~ee~~|<br>~~ee~~|1,287<br>~~ee~~|<br>~~ee~~|pF<br>~~ee~~|VDS= 25V, VGS= 0V<br>f = 1.0MHz<br>~~ee~~|
|Output Capacitance<br>~~ee~~|COSS<br>~~ee~~|<br>~~ee~~|57<br>~~ee~~|<br>~~ee~~|||
|Reverse Transfer Capacitance<br>~~ee~~|CRSS<br>~~ee~~|<br>~~ee~~|44<br>~~ee~~|<br>~~ee~~|||
|Gate Resistance<br>~~ee~~<br>~~————~~|RG<br>~~ee~~|<br>~~ee~~|1.2<br>~~ee~~|<br>~~ee~~<br>~~e~~|Ω<br>~~ee~~<br>~~e~~|VDS= 0V,VGS= 0V,f = 1.0MHz<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= 10V)<br>~~————~~|QG||22.4|<br>~~e~~|nC<br>~~e~~<br>~~ee~~|VDS= 30V, ID= 4.3A<br>~~ee~~<br>~~ee~~|
|Total Gate Charge(VGS= 4.5V)<br>~~————~~|QG||10.4|<br>~~e~~|||
|Gate-Source Charge<br>~~————~~|QGS||4.9|<br>~~e~~|||
|Gate-Drain Charge<br>~~————~~<br>~~————~~|QGD||3.0|<br>~~e~~<br>~~ee~~|||
|Turn-On DelayTime<br>~~————~~<br>~~————~~|tD(ON)||6.6|<br>~~e~~<br>~~ee~~|ns<br>~~e~~<br>~~ee~~|VGS= 10V, VDD= 30V, RG= 6Ω,<br>ID= 4.3A<br>~~ee~~<br>~~ee~~|
|Turn-On Rise Time<br>~~————~~|tR||8.1|<br>~~ee~~|||
|Turn-Off DelayTime<br>~~————~~|tD(OFF)||20.1|<br>~~ee~~|||
|Turn-Off Fall Time<br>~~————~~|tF||4.0|<br>~~ee~~|||
|BodyDiode Reverse RecoveryTime<br>~~————~~<br>~~ee~~|tRR<br>~~ee~~|<br>~~ee~~|18<br>~~ee~~|<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|IS= 4.3A,di/dt = 100A/μs<br>~~ee~~<br>~~ee~~|
|BodyDiode Reverse RecoveryCharge<br>~~ee~~|QRR<br>~~ee~~|<br>~~ee~~|11.9<br>~~ee~~|<br>~~ee~~|nC<br>~~ee~~|IS= 4.3A,di/dt = 100A/µs<br>~~ee~~|



8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 

9. Short duration pulse test used to minimize self-heating effect. 

10. Guaranteed by design. Not subject to product testing. 

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20 20<br>V DS = 5.0V<br>16 i/ohow 16 SgeeneeSonnsen<br>fee Seen<br>12 hee 12 ee |<br>2 ana Seen ino<br>8 Yr 8 Seeeee inn<br>TA = 150°C<br>4 | 4 a TA = 125°C fh T A  = 85°C<br>T A  = 25°C<br>|= fe<br>0 poe 0 sane TA = -55°C Jaen<br>0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5<br>VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE<br>Fig.1 Typical Output Characteristic Fig.2  Typical Transfer Characteristics<br>0.10 0.10<br>0.09<br>0.08 0.08<br>0.07 SnEEeEes ae AOR<br>0.06 FEEEEFEEEE 0.06 OLLIE<br>0.05 ID = 3.5A ID = 4.5A<br>0.04 SEER V GS = 4.5V HEE 0.04 a<br>fit ft Ke<br>0.03<br>VGS = 10V<br>0.02 0.02<br>0.01 PSE te sna<br>0 CEE CE ECE 0 LEE ELLE<br>0 4 8 12 16 20 0 1 2 3 4 5 6 7 8 9 10<br>ID, DRAIN-SOURCE CURRENT VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 3 Typical On-Resistance vs.  Fig. 4 Typical On-Resistance  vs.<br>Drain Current and Gate Voltage  Drain Current and Gate Voltage<br>0.10 2.4<br>0.09 VGS = 4.5V “CELE 2.2 a<br>2.0 V GS   10= V<br>0.08 TA = 150°C ID = 10A<br>Co 1.8 EEE<br>0.07<br>ee 1.6 FETE TAR<br>0.06 T A  = 125°C 1.4 VGS = 4.5V<br>0.05 aaaEEE TA = 85°C 1.2 TITSAAITA I D = 5A<br>0.04 PCO EL oo 1.0 Seat<br>0.03 oO or TA = 25°C 0.8 | [et TT<br>0.6<br>as Fo<br>0.02 T A  = -55°C 0.4<br>0.01 SPREE Lo 0.2 SEES<br>0 HEEEPEEEEr 0 FEET<br>0 4 8 12 16 20 50 -25 0 25 50 75 100 125 150<br>ID, DRAIN CURRENT TJ, JUNCTION TEMPERATURE (C)<br>Fig. 5 Typical On-Resistance vs.  Fig. 6 On-Resistance Variation with Temperature<br>Drain Current and Temperature<br>, DRAIN CURRENT (A)<br>D<br> I<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON)<br>R<br>, DRAIN-SOURCE<br>DS(ON)<br>R<br>ON-RESISTANCE (NORMALIZED)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br>, DRAIN CURRENT (A)<br>D<br> I<br>DS(ON)<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>**----- End of picture text -----**<br>


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0.10 4.0<br>3.5<br>0.08<br>3.0<br>0.06 ff | V GS = 4.5V Lv 2.5 Piet tt ft<br>ID = 500mA<br>pa 2.0 et ID = 1mA<br>Zz | | | |) | lf<br>0.04 a VGS  2.5= a V 1.5 ——_eee I D = 250µA<br>ID = 200mA<br>1.0<br>0.02 eS SSS<br>0.5<br>0 0<br>- 50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)<br>Fig. 7 On-Resistance Variation with Temperature Fig. 8 Gate Threshold Variation vs. Ambient Temperature<br>20<br>aa CCQa GQ QO<br>a GO|<br>16 PF | | | fe Se<br>4,000 |__| Ciss<br>12 T A = 25°C oo<br>8 ee ee a<br>ee o frs S [ee] eeS C | oss a<br>4 PF || || |[| ftfF |]| —————t+ f = 1MHz C rss -—|<br>| | I<br>0 | | | LY [| 10 = PF |ooft ft<br>0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 30<br>VSD, SOURCE-DRAIN VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig.9 Diode Forward Voltage vs. Current Fig. 10 Typical Junction Capacitance<br>100 EC<br>10 VDS = 30V | | YY | Se Ge Ee ca]Ee]<br>ID  4.3= A<br>98 _| | YZ | 10 —aS|foo aIL<br>7 eeeeee, See,8<br>1 DC<br>6 TT Yr we PW SARA  = 10s |<br>P W  = 1s<br>0.1<br>PW = 100ms<br>T J(m ax)  = 150°C PW = 10ms<br>7 a 0.01 TA = 25°C See PW = 1ms<br>ei<br>VGS = 10V PW = 100µs<br>Single Pulse<br>0 0.001 DUT on 1 * MRP Board ee<br>0 5 10 15 20 25<br>0.1 1 10 100<br>Qg [, TOTAL GATE CHARGE ] (nC)<br>V DS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 11 Gate Charge<br>Figure 12 SOA, Safe Operation Area<br>GS(th)<br>, GATE THRESHOLD VOLTAGE (V)<br>V<br>, JUNCTION CAPACITANCE (pF)<br>C<br>T<br>, SOURCE CURRENT (V)<br>IS<br>)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>R<br>DS(ON)<br> GATE THRESHOLD VOLTAGE (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>D<br>I<br>**----- End of picture text -----**<br>


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1 eS==.<br>nner D = 0.9 ee ee a —<br>eee D = 0.7<br>D = 0.5<br>FH te<br>D = 0.3 A cee |<br>PTTPETE LEANATLeer |  eIIN LUE EIN LET<br>0.1<br>D = 0.1<br>a OO OO 4 OO OOOO<br>Pa<br>D = 0.05<br>FEGr ATTICeT<br>Cr<br>D = 0.02<br>Fd<br>0.01 aeeSS 7AaGO 6aGS SG 0ae a a meee<br>Po D = 0.01 EH ee HH J * EHH<br>Se a Rthja(t)=r(t)   Rthja ati<br>D = 0.005 Rthja=100C/W<br>Eo TTI TTT LET<br>Duty Cycle, D=t1 /  t2<br>Single Pulse<br>0.001 ere2aT AA muH l l<br>0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t1, PULSE DURATION TIMES (sec)<br>Figure 13  Transient Thermal Resistance<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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**DMN6040SSDQ** 

## **Package Outline Dimensions** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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SO-8<br>SO-8<br>Dim  Min  Max  Typ<br>E<br>= A  1.40  1.50  1.45<br>A1  0.10 0.20 0.15<br>1 b  0.30 0.50 0.40<br>c  0.15 0.25 0.20<br>D  4.85 4.95 4.90<br>E  5.90  6.10  6.00<br>b E1  3.80  3.90  3.85<br>E1<br>E0  3.85  3.95  3.90<br>h e  --  --  1.27<br>Q<br>h  -  --  0.35<br>7°<br>L   0.62  0.82  0.72<br>c<br>Q 0.60  0.70  0.65<br>A 4°±3° All Dimensions in mm<br>G auge Plane<br>S eating Plane<br>L<br>e A1 Je E0<br>D<br>ggested Pad Layout ested Pad Layout yout out<br>Please see http://www.diodes.com/package-outlines.html for the latest version.<br>SO-8<br>X1<br>Dimensions Value (in mm)<br>poo C  1.27<br>Y1 X  0.802<br>X1  4.612<br>Y  1.505<br>Y1  6.50<br>Y<br>oe<br>Hae C X<br>9° (All sides)<br>R 0.1<br>45°<br>**----- End of picture text -----**<br>


## **Suggested Pad Layout ested Pad Layout yout out** 

Please see http://www.diodes.com/package-outlines.html for the latest version. 

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**DMN6040SSDQ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. 

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2016, Diodes Incorporated 

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