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DMC4040SSDQ-13
Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 6.8 A, 6.8 A, 0.025 ohm
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- Manufacturer: DIODES INC.
- Product type: Dual MOSFETs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: AEC-Q101
- Transistor Case Style: SOIC
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.8W
- Power Dissipation P Channel: 1.8W
- Drain Source Voltage Vds N Channel: 40V
- Drain Source Voltage Vds P Channel: 40V
- Continuous Drain Current Id N Channel: 6.8A
- Continuous Drain Current Id P Channel: 6.8A
- Drain Source On State Resistance N Channel: 0.025ohm
- Drain Source On State Resistance P Channel: 0.025ohm
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.375 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**DMC4040SSDQ** ## **40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET** ## **Product Summary** |**Product Summaryy**|**Product Summaryy**|**Product Summaryy**|**Product Summaryy**| |---|---|---|---| ||||| |**Device**|**V(BR)DSS**|**RDS(on)**max|**ID **max<br>**TA = +25**°**C**<br>**(Note 7 & 9)**| |Q1|40V|25mΩ @VGS= 10V|7.5A| |||40mΩ @VGS= 4.5V|6.2A| |Q2|-40V|25mΩ @VGS= -10V|-7.3A| |||45mΩ @VGS= -4.5V|-5.7A| ## **Features and Benefits** - Reduced Footprint with Two Discrete Devices in Single SO-8 - • Low On-Resistance - Fast Switching Speed - Low Input/Output Leakage - **Lead-Free Finish; RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** - **Qualified to AEC-Q101 Standards for High Reliability** - **PPAP Available (Note 4)** ## **Description and Applications** This MOSFET has been designed to ensure that RDS(on) of N and P channel FET are matched to minimize losses in both arms of the bridge. The DMC4040SSDQ is optimized for use in 3 phases brushless DC motor circuits (BLDC), CCFL backlighting. - 3 phases BLDC motor - CCFL backlighting ## **Mechanical Data** - Case: SO-8 - Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals Connections: See diagram below - Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 © **e3** - • Weight: 0.074 grams (approximate) **==> picture [427 x 127] intentionally omitted <==** **----- Start of picture text -----**<br> SO-8 D1 D2<br>S1 =a TT D1<br>|<br>G1 D1 G1 G2<br>S2 D2<br>S1 S2<br>G2 D2<br>Q1 N-Channel Q2 P-Channel<br>Top View Top viewTop View Equivalent Circuit<br>**----- End of picture text -----**<br> ## **Ordering Information** (Note 4 & 5) |**Ordering Informationg Information Information** (Note 4 & 5)|(Note 4 & 5)||| |---|---|---|---| |**Part Number**|**Compliance**|**Case**|**Packaging**| |DMC4040SSDQ-13|Automotive|SO-8|2,500/Tape&Reel| - Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. ## **Marking Information** **==> picture [289 x 87] intentionally omitted <==** **----- Start of picture text -----**<br> 8 5<br> = Manufacturer’s Marking<br>C4040SD = Product Type Marking Code<br>C4040SD YYWW = Date Code Marking<br>YY = Year (ex: 13 = 2013)<br>YY WW WW = Week (01 - 53)<br>1 4<br>PT LILI<br>**----- End of picture text -----**<br> 1 of 11 **www.diodes.com** DMC4040SSDQ Document number: DS37235 Rev. 2 - 2 May 2014 © Diodes Incorporated **DMC4040SSDQ** **Maximum Ratings** (@TA = +25°C, unless otherwise specified.) ||**Characteristic**<br>**Symbol**<br>**N-Channel - Q1**<br>**P-Channel - Q2**<br>**Units**<br>~~Ge~~| |---|---| ||Drain-Source Voltage<br>VDSS<br>40<br>-40<br>V<br>~~Ge~~| |Gate-Source Voltage<br>VGSS<br>±20<br>±20<br>V<br>Continuous Drain Current<br>VGS= 10V<br>(Notes 7 & 9)<br>ID<br>7.5<br>-7.5<br>A<br>TA= +70°C(Notes 7 & 9)<br>5.8<br>-5.8<br>(Notes 6 & 9)<br>5.7<br>-5.7<br>(Notes 6 & 10)<br>6.8<br>-6.8<br>Pulsed Drain Current<br>VGS= 10V<br>(Notes 8 & 9)<br>IDM<br>29.0<br>-29.0<br>A<br>Continuous Source Current (Body diode)<br>(Notes 7 & 9)<br>IS<br>3.0<br>-3.0<br>A<br>Pulsed Source Current (Body diode)<br>(Notes 8 & 9)<br>ISM<br>29.0<br>-29.0<br>A<br>**Thermal Characteristics **(@TA= +25°C, unless otherwise specified.)<br>**Characteristic**<br>**Symbol**<br>**N-Channel - Q1**<br>**P-Channel - Q2**<br>**Unit**<br>Power Dissipation<br>Linear Derating Factor<br>(Notes 6 & 9)<br>PD<br>1.25<br>10<br>W<br>mW/°C<br>(Notes 6 & 10)<br>1.8<br>14.3<br>~~GO~~<br>~~—~~<br>~~|~~<br>~~|ees~~<br>~~Pp~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee ee ee~~|| ||(Notes 7 & 9)<br>2.14<br>17.2| ||(Notes 6 & 9)<br>100| ||Thermal Resistance, Junction to Ambient<br>RθJA<br>°C/W<br>(Notes 6 & 10)<br>70<br>(Notes 7 & 9)<br>58| ||Thermal Resistance, Junction to Lead<br>(Notes 9 & 11)<br>RθJL<br>51| ||Operating and Storage Temperature Range<br>TJ, TSTG<br>-55 to +150<br>°C| Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 7. Same as note (6), except the device is measured at t ≤ 10 sec. 8. Same as note (6), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 9. For a dual device with one active die. 10. For a device with two active die running at equal power. 11. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 11 **www.diodes.com** DMC4040SSDQ Document number: DS37235 Rev. 2 - 2 May 2014 © Diodes Incorporated **DMC4040SSDQ** [ ## **Thermal Characteristics** **==> picture [209 x 328] intentionally omitted <==** **----- Start of picture text -----**<br> = Ss<br>RDS(ON)<br>DS(ON)<br>10 Limited<br>1 DC<br>1s<br>100ms<br>100m eee 10ms LTS NS<br>Single Pulse 1ms<br>Tamb= 25°Camb= 25°C= 25°C°CC 100us<br>10m One active die Tira,ay|ay|<br>0.1 1 10<br>-VDS Drain-Source Voltage (V)DS Drain-Source Voltage (V) Drain-Source Voltage (V)<br>P-channel Safe Operating Area<br>2.0 TTT TTT<br>TITIITILo£<br>1.5 PS Two active die a<br>NN<br>One active die<br>1.0 NX r<br>PNG | |<br>PINON<br>NN<br>0.5<br>PNR<br>PONPRSXAA SXAA<br>0.0 PRSXAA<br>0 25 50 75 100 125 150<br> Drain Current (A)-ID<br>D<br>-ID<br> Max Power Dissipation (W)<br>**----- End of picture text -----**<br> **==> picture [431 x 354] intentionally omitted <==** **----- Start of picture text -----**<br> R DS(ON) RDS(ON)<br>10 Limited 10 Limited<br>1 DC 1 DC<br>1s 1s<br>100ms 100ms<br>100m || fl 10ms 27a, <—h- I 100m eee 10ms LTS<br>Single Pulse 1ms Single Pulse 1ms<br>T amb = 25 ° C 100us Tamb= 25°Camb= 25°C= 25°C°CC 100us<br>10m One active die TTTay od | 10m One active die Tira,ay|ay|<br>0.1 1 10 0.1 1 10<br>VDS Drain-Source Voltage (V) -VDS Drain-Source Voltage (V)DS Drain-Source Voltage (V) Drain-Source Voltage (V)<br>N-channel Safe Operating Area P-channel Safe Operating Area<br>2.0<br>100 R(theta junction-to-ambient), R θ JA mM TTT TTT<br>One active die L TITIITILo£<br>80 WAT 1.5 PS Two active die<br>PEM me" Ml NN<br>60 D=0.5 One active die<br>A 1.0 NX r<br>Se TN FCM Ta PNG |<br>tM PINON<br>40<br>CTT gC NN<br>D=0.2 Single Pulse<br>0.5<br>20 pe D=0.05 Ih PNR<br>0 CTeeeeaneAA UL D=0.1 oldELTTi| 0.0 PONPRSXAA<br>100µ 1m 10m 100m 1 10 100 1k 0 25 50 75 100 125 150<br>Pulse Width (s) Temperature (°C)<br>Transient Thermal Impedance Derating Curve<br> Drain Current (A)ID Drain Current (A)-ID<br>Thermal Resistance (°C/W) Max Power Dissipation (W)<br>**----- End of picture text -----**<br> **==> picture [216 x 143] intentionally omitted <==** **----- Start of picture text -----**<br> Single Pulse<br>100 AUBND), SN TTUTTATATT T amb = 25°C | Hi<br>One active die<br>FHI eK HHI<br>PTI TETAS TTT TTT TTT<br>|e TE PNET qe AG<br>10 UTI IN IMSS TTI ETT CUI<br>See|,<n tt mmet<br>aya a eh, | ||<br>Ll<br>El<br>1 ETT TUT LTT TieH0\tmaronasia<br>100µ 1m 10m 100m 1 10 100 1k<br>Pulse Width (s)<br>Maximum Power (W)<br>**----- End of picture text -----**<br> **Pulse Power Dissipation** 3 of 11 **www.diodes.com** DMC4040SSDQ Document number: DS37235 Rev. 2 - 2 May 2014 © Diodes Incorporated **DMC4040SSDQ** ## **Electrical Characteristics – Q1 N-Channel** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics – Q1 N-Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q1 N-Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q1 N-Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q1 N-Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q1 N-Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q1 N-Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q1 N-Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q1 N-Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---|---| ||||||||| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|| |**OFF CHARACTERISTICS**<br>~~ee~~|||||||| |Drain-Source Breakdown Voltage<br>~~ee~~|BVDSS<br>~~ee~~|40<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|V<br>~~ee~~|ID= 250µA, VGS= 0V<br>~~ee~~|| |Zero Gate Voltage Drain Current<br>~~ee~~|IDSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|1.0<br>~~ee~~|µA<br>~~ee~~|VDS= 40V, VGS= 0V<br>~~ee~~|| |Gate-Source Leakage<br>~~ee~~|IGSS<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|±100<br>~~ee~~|nA<br>~~ee~~|VGS=±20V, VDS= 0V<br>~~ee~~|| |**ON CHARACTERISTICS**<br>~~GOGO~~|||||||| |Gate Threshold Voltage<br>~~Ps~~|VGS(th)<br>~~Ps~~|0.8<br>~~Ps~~|1.3<br>~~Ps~~<br>~~GO~~|1.8<br>~~Ps~~<br>~~GO~~|V<br>~~Ps~~<br>~~GO~~|ID= 250µA, VDS= VGS<br>~~Ps~~<br>~~GO~~|| |Static Drain-Source On-Resistance (Note 12)<br>~~oe~~|RDS (ON)<br>~~oe~~|—<br>~~oe~~|0.013<br>~~GO~~<br>~~oe~~|0.025<br>~~GO ~~<br>~~oe~~|Ω<br> ~~GO~~<br>~~oe~~|VGS= 10V, ID= 3A<br>~~GO~~<br>~~oe~~|| ||||0.028<br>~~oe~~|0.040<br>~~oe~~||VGS= 4.5V, ID= 3A<br>~~oe~~|| |Forward Transconductance (Notes 12 & 13)<br>~~a~~|gfs<br>~~a~~|—<br>~~a~~|12.6<br>~~a~~|—<br>~~a~~|S<br>~~a~~|VDS= 5V, ID= 3A<br>~~a~~|| |Diode Forward Voltage (Note 8)<br>~~a~~<br>~~——~~|VSD<br>~~a~~<br>~~——~~|—<br>~~a~~|0.7<br>~~a~~|1.0<br>~~a~~|V<br>~~a~~<br>~~ee~~|IS= 1A, VGS= 0V<br>~~a~~<br>~~ee~~|| |**DYNAMIC CHARACTERISTICS(Note 13)**<br>~~——~~<br>~~ee~~|||||||| |Input Capacitance<br>~~——~~|Ciss<br>~~——~~|—|1790|—|pF<br>~~ee~~|VDS= 20V, VGS= 0V<br>F = 1MHz<br>~~ee~~<br>~~ee~~|| |Output Capacitance<br>~~——~~|Coss<br>~~——~~|—|160|—|pF<br>~~ee~~||| |Reverse Transfer Capacitance<br>~~——~~<br>~~——_—_~~|Crss<br>~~——~~<br>~~ss~~<br>~~——_—_~~|—<br>~~ss~~|120<br>~~QQ~~|—<br>~~QQ~~|pF<br>~~ee~~<br>~~QQ~~<br>~~e~~||| |Gate Resistance<br>~~——~~<br>~~en~~<br>~~——_—_~~|Rg<br>~~——~~<br>~~en~~<br>~~ss~~<br>~~——_—_~~|—<br>~~en~~<br>~~ss~~|1.03<br>~~en~~<br>~~QQ~~|—<br>~~en~~<br>~~QQ~~|Ω<br>~~ee~~<br>~~en~~<br>~~QQ~~<br>~~e~~|VDS= 0V, VGS= 0V, f = 1MHz<br>~~ee~~<br>~~en~~<br>~~ee~~|| |Total Gate Charge (Note 14)<br>~~——~~<br>~~——_—_~~|Qg<br>~~——~~<br>~~ss~~<br>~~——_—_~~|—<br>~~ss ~~|16.0<br> ~~QQ~~|—<br>~~QQ~~|nC<br>~~ee~~<br>~~QQ~~<br>~~e~~|VGS= 4.5V<br>~~ee~~<br>~~ee~~|VDS= 20V<br>ID= 3A<br>~~ee~~<br>~~e~~| |Total Gate Charge (Note 14)<br>~~——_—_~~|Qg<br>~~——_—_~~|—|37.6|—|nC<br>~~e~~|VGS= 10V<br>~~ee~~|| |Gate-Source Charge (Note 14)<br>~~——_—_~~<br>~~———~~|Qgs<br>~~——_—_~~<br>~~ee~~|—<br>~~ee~~|7.8|—|nC<br>~~e~~||| |Gate-Drain Charge (Note 14)<br>~~——_—_~~<br>~~———~~|Qgd<br>~~——_—_~~<br>~~ee~~|—<br>~~ee~~|6.6|—|nC<br>~~e~~||| |Turn-On Delay Time (Note 14)<br>~~——_—_~~<br>~~———~~<br>~~———~~|tD(on)<br>~~——_—_~~<br>~~ee~~<br>~~———~~|—<br>~~ee~~<br>~~———~~|8.1<br>~~———~~|—<br>~~———~~|ns<br>~~e~~<br>~~———~~|VDD= 20V, VGS= 10V<br>ID= 3A<br>~~ee~~<br>~~———~~|| |Turn-On Rise Time (Note 14)<br>~~———~~<br>~~———~~|tr<br>~~ee~~<br>~~———~~|—<br>~~ee~~<br>~~———~~|15.1<br>~~———~~|—<br>~~———~~|ns<br>~~———~~||| |Turn-Off Delay Time (Note 14)<br>~~———~~<br>~~———~~|tD(off)<br>~~ee~~<br>~~———~~|—<br>~~ee~~<br>~~———~~|24.3<br>~~———~~|—<br>~~———~~|ns<br>~~———~~||| |Turn-Off Fall Time (Note 14)<br>~~———~~|tf<br>~~———~~|—<br>~~———~~|5.3<br>~~———~~|—<br>~~———~~|ns<br>~~———~~||| Notes: 12. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2% 13. For design aid only, not subject to production testing. 14. Switching characteristics are independent of operating junction temperatures. ## **Typical Characteristics – Q1 N-Channel** **==> picture [205 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>25 VGS = 8.0V<br>20 V GS = 4.5V<br>15<br>VGS = 4.0V<br>10<br>VGS = 3.5V<br>5<br>VGS = 2.5V VGS = 3.0V<br>0<br>0 0.5 1 1.5 2<br>VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 1 Typical Output Characteristic<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [204 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>25 VDS = 5V<br>20<br>15<br>10<br>5 TA = 125°CTA = 150°C TA = 25°CT A = 85°C<br>TA = -55°C<br>0<br>0 1 2 3 4 5<br>VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 2 Typical Transfer Characteristic<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br> 4 of 11 **www.diodes.com** DMC4040SSDQ Document number: DS37235 Rev. 2 - 2 May 2014 © Diodes Incorporated **DMC4040SSDQ** **==> picture [481 x 664] intentionally omitted <==** **----- Start of picture text -----**<br> 0.06 0.04<br>VGS = 10V<br>0.05<br>0.03<br>0.04<br>TA = 150°C<br>0.03 0.02<br>VGS = 4.5V TA = 125°C<br>TA = 85 ° C<br>0.02<br>TA = 25°C<br>0.01<br>0.01 VGS = 10V TA = -55°C<br>0 0<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)<br>Fig. 3 Typical On-Resistance Fig. 4 Typical On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.7 0.06<br>1.5 V GS = 10V 0.05<br>ID = 20A<br>1.3 0.04<br>1.1 VIGSD = 10A = 4.5V 0.03 V IGSD = 10A = 4.5V<br>0.9 0.02<br>7 EEE<br>0.7 0.01 sapeeeee V GS = 10V<br>ID = 20A<br>0.5 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Fig. 5 On-Resistance Variation with Temperature<br>Fig. 6 On-Resistance Variation with Temperature<br>3.0 20<br>2.7 18<br>2.4 16<br>2.1 14 TA = 25 ° C<br>1.8 12<br>1.5 ID = 1mA 10<br>1.2 8<br>0.9 ID = 250µA 6<br>0.6 4<br>0.3 2<br>0 ae 0 |<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2<br>TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>)Ω<br>, DRAIN-SOURCE<br>DSON<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DSON<br>R<br>, SOURCE CURRENT (A)<br>, GATE THRESHOLD VOLTAGE (V)GS(TH) IS<br>V<br>**----- End of picture text -----**<br> 5 of 11 **www.diodes.com** DMC4040SSDQ Document number: DS37235 Rev. 2 - 2 May 2014 © Diodes Incorporated **DMC4040SSDQ** **==> picture [478 x 220] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000 10,000<br>A Ciss 1,000 ae TA = 150°C<br>1,000<br>T A = 125°C<br>100<br>Coss<br>Se ae<br>100 Crss | EERE T A = 85°C<br>10 i_aeweeoe<br>T A = 25°C<br>f = 1MHz<br>10 1<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40<br>VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 9 Typical Total Capacitance Fig. 10 Typical Leakage Current<br>vs. Drain-Source Voltage<br>C, CAPACITANCE (pF) , LEAKAGE CURRENT (nA)<br>IDSS<br>**----- End of picture text -----**<br> **==> picture [203 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>8 VDS = 20V<br>ID = 12A<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25 30 35 40<br>Qg, TOTAL GATE CHARGE (nC)<br>Fig. 11 Gate-Charge Characteristics<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br> 6 of 11 **www.diodes.com** DMC4040SSDQ Document number: DS37235 Rev. 2 - 2 May 2014 © Diodes Incorporated ## **DMC4040SSDQ** ## **Electrical Characteristics – Q2 P-Channel** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics – Q2 P-Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q2 P-Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q2 P-Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q2 P-Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q2 P-Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q2 P-Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q2 P-Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics – Q2 P-Channel** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)| |---|---|---|---|---|---|---|---| ||||||||| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|**Test Condition**|| |**OFF CHARACTERISTICS**|||||||| |Drain-Source Breakdown Voltage|BVDSS|-40|—|—|V|ID= -250µA, VGS= 0V|| |Zero Gate Voltage Drain Current|IDSS|—|—|-1.0|µA|VDS= -40V, VGS= 0V|| |Gate-Source Leakage|IGSS|—|—|±100|nA|VGS=±20V, VDS= 0V|| |**ON CHARACTERISTICS**|||||||| |Gate Threshold Voltage|VGS(th)|-0.8|-1.3|-1.8|V|ID= -250µA, VDS= VGS|| |Static Drain-Source On-Resistance (Note 15)|RDS (ON)|—|0.018|0.025|Ω|VGS= -10V, ID= -3A|| ||||0.030|0.045||VGS= -4.5V, ID= -3A|| |Forward Transconductance (Notes 15 & 16)|gfs|—|16.6|—|S|VDS= -5V, ID= -3A|| |Diode Forward Voltage (Note 15)|VSD|—|-0.7|-1.0|V|IS= -1A, VGS= 0V|| |**DYNAMIC CHARACTERISTICS(Note 16)**|||||||| |Input Capacitance|Ciss|—|1643|—|pF|VDS= -20V, VGS= 0V<br>F = 1MHz|| |Output Capacitance|Coss|—|179|—|pF||| |Reverse Transfer Capacitance|Crss|—|128|—|pF||| |Gate Resistance|Rg|—|6.43|—|Ω|VDS= 0V, VGS= 0V, f = 1MHz|| |Total Gate Charge (Note 17)|Qg|—|14.0|—|nC|VGS= -4.5V|VDS= -20V<br>ID= -3A| |Total Gate Charge (Note 17)|Qg|—|33.7|—|nC|VGS= -10V|| |Gate-Source Charge (Note 17)|Qgs|—|5.5|—|nC||| |Gate-Drain Charge (Note 17)|Qgd|—|7.3|—|nC||| |Turn-On Delay Time (Note 17)|tD(on)|—|6.9|—|ns|VDD= -20V, VGS= -10V<br>ID= -3A|| |Turn-On Rise Time (Note 17)|tr|—|14.7|—|ns||| |Turn-Off Delay Time (Note 17)|tD(off)|—|53.7|—|ns||| |Turn-Off Fall Time (Note 17)|tf|—|30.9|—|ns||| Notes: 15. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2% 16. For design aid only, not subject to production testing. 17. Switching characteristics are independent of operating junction temperatures ## **Typical Characteristics – Q2 P-Channel** **==> picture [465 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> 30 30<br>Veg = - 10V |<br>gs Veg = - 4.5V<br>25 Veg = -4.0V 25 VDS = -5V TA = 85°C f T A = 150°C<br>20 20 T A = 25°C TA = 125 ° C<br>Veg = - 3 . 5V TA = -55°C<br>15 15<br>10 Veg = -3.0V 10<br>5 5<br>Y<br>Veg =-2.0V Vag =-2.2Ny Ves =-25V J<br>0 0<br>0 0.5 1 1.5 2 0 1 2 3 4 5<br>-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V)<br>Fig. 13 Typical Output Characteristic Fig. 14 Typical Transfer Characteristic<br>, DRAIN CURRENT (A)-ID , DRAIN CURRENT (A)-ID<br>**----- End of picture text -----**<br> 7 of 11 **www.diodes.com** DMC4040SSDQ Document number: DS37235 Rev. 2 - 2 May 2014 © Diodes Incorporated **==> picture [550 x 696] intentionally omitted <==** **----- Start of picture text -----**<br> DMC4040SSDQ<br>0.05 0.04<br>V GS = -10V<br>0.04<br>0.03<br>TA = 150°C<br>0.03 V GS = -4.5V TA = 125°C<br>TA = 85°C<br>0.02<br>0.02 TA = 25°C<br>VGS = -10V TA = -55°C<br>0.01<br>0.01<br>0 0<br>0 5 10 15 20 25 30 0 5 10 15 20 25 30<br>-ID, DRAIN-SOURCE CURRENT (A) -ID, DRAIN CURRENT (A)<br>Fig. 15 Typical On-Resistance Fig. 16 Typical On-Resistance<br>vs. Drain Current and Gate Voltage vs. Drain Current and Temperature<br>1.7 0.06<br>1.5 V GS = -10V 0.05<br>ID = -20A<br>| a Ee<br>1.3 0.04<br>VGS = -4.5V<br>ID = -10A<br>1.1 0.03 VGS = -4.5V<br>ID = -10A<br>0.9 0.02<br>VGS = -10V<br>ID = -20A<br>0.7 ee 0.01 secasere<br>0.5 0<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)<br>Fig. 17 On-Resistance Variation with Temperature Fig. 18 On-Resistance Variation with Temperature<br>2.0 20<br>18<br>16<br>1.5<br>14 T A = 25°C<br>12<br>1.0 ID = -1mA 10<br>8<br>ID = -250µA<br>6<br>0.5<br>4<br>2<br>0 SEIT 0 |<br>-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2<br>TA, AMBIENT TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)<br>Fig. 19 Gate Threshold Variation vs. Ambient Temperature Fig. 20 Diode Forward Voltage vs. Current<br>)Ω )Ω<br>, DRAIN-SOURCE ON-RESISTANCE ( , DRAIN-SOURCE ON-RESISTANCE (<br>DS(ON) DS(ON)<br>R R<br>NEW PRODUCT<br>NEW PRODUCT )<br>Ω<br>, DRAIN-SOURCE<br>DSON<br>R<br>ON-RESISTANCE (NORMALIZED)<br>, DRAIN-SOURCE ON-RESISTANCE (<br>DSON<br>R<br>, SOURCE CURRENT (A)<br>, GATE THRESHOLD VOLTAGE (V)GS(TH) -IS<br>-V<br>**----- End of picture text -----**<br> 8 of 11 **www.diodes.com** DMC4040SSDQ Document number: DS37235 Rev. 2 - 2 May 2014 © Diodes Incorporated **DMC4040SSDQ** **==> picture [217 x 438] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000<br>T_T Ciss<br>1,000<br>—_—§<br>C oss<br>100 ee Crss<br>10<br>0 5 10 15 20 25 30<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 21 Typical Total Capacitance<br>10<br>8 V DS = -20V<br>ID = -12A<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25 30 35 40<br>Qg, TOTAL GATE CHARGE (nC)<br>Fig. 23 Gate-Charge Characteristics<br>C, CAPACITANCE (pF)<br>, GATE-SOURCE VOLTAGE (V)<br>GS<br>-V<br>**----- End of picture text -----**<br> **==> picture [216 x 219] intentionally omitted <==** **----- Start of picture text -----**<br> 10,000<br>TA = 150°C<br>1,000<br>a<br>(ae T A = 125°C ee<br>100<br>TA = 85°C<br>Jobe<br>10<br>TA = 25°C<br>1<br>0 = 5 10 15 20 25 Ps 30 35 40<br>-VDS, DRAIN-SOURCE VOLTAGE (V)<br>Fig. 22 Typical Leakage Current<br>vs. Drain-Source Voltage<br>, LEAKAGE CURRENT (nA)<br>DSS<br>-I<br>**----- End of picture text -----**<br> 9 of 11 **www.diodes.com** DMC4040SSDQ Document number: DS37235 Rev. 2 - 2 May 2014 © Diodes Incorporated **DMC4040SSDQ** ## **Package Outline Dimensions** Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. **==> picture [245 x 127] intentionally omitted <==** **----- Start of picture text -----**<br> E1 E<br>Gauge Plane<br>A1 Seating Plane<br>L<br>Detail ‘A’<br>h 7°~9°<br>45°<br>Detail ‘A’<br>A2 A A3<br>e b<br>D<br>0.254<br>**----- End of picture text -----**<br> |**SO-8**|**SO-8**|**SO-8**| |---|---|---| |**Dim**|**Min**|**Max**| |**A**|-|1.75| |**A1**|0.10|0.20| |**A2**|1.30|1.50| |**A3**|0.15|0.25| |**b**|0.3|0.5| |**D**|4.85|4.95| |**E**|5.90|6.10| |**E1**|3.85|3.95| |**e**|1.27 Typ|| |**h**|-|yp<br>0.35| |**L**|0.62|0.82| |θ|0°|8°| |All Dimensions in mm||| ## **Suggested Pad Layout** Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. **==> picture [94 x 113] intentionally omitted <==** **----- Start of picture text -----**<br> X<br>Wea eh<br>C1<br>C2<br>Y<br>t f [Hao] |<br>**----- End of picture text -----**<br> |**Dimensions**|**Value(in mm)**| |---|---| |**X**|0.60| |**Y**|1.55| |**C1**|5.4| |**C2**|1.27| 10 of 11 **www.diodes.com** DMC4040SSDQ Document number: DS37235 Rev. 2 - 2 May 2014 © Diodes Incorporated **DMC4040SSDQ** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: - A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated **www.diodes.com** 11 of 11 **www.diodes.com** DMC4040SSDQ Document number: DS37235 Rev. 2 - 2 May 2014 © Diodes Incorporated
Updated at June 9, 2026
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