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CS35-12IO4
Thyristor Module, Single, 120 A, 1.2 kV
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- Manufacturer: IXYS SEMICONDUCTOR
- Product type: Thyristors - SCR Modules
- Product Range: CS 35
- SCR Module Type: Single SCR
- Thyristor Mounting: Stud Mount
- Holding Current Max: 80mA
- On State RMS Current: 120A
- Thyristor Case Style: TO-208AC
- Average Forward Current: 69A
- Average On State Current: 69A
- Gate Trigger Current Max: 100mA
- Gate Trigger Voltage Max: 1.5V
- Operating Temperature Max: 125°C
- Repetitive Peak Reverse Voltage: 1.2kV
- Peak Non Repetitive Surge Current: 1.2kA
- Peak Repetitive Off State Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 21.68 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**CS 35** ## **Phase Control Thyristors VRRM = 800-1400 V I = 120 A T(RMS) I = 69 A T(AV)M** |**VRSM**|**VRRM**|**Type**| |---|---|---| |**VDSM**|**VDRM**|| |**V**|**V**|| |**900**|**800**|**CS 35-08io4**| |**1300**|**1200**|**CS 35-12io4**| |**1500**|**1400**|**CS 35-14io4**| **==> picture [241 x 111] intentionally omitted <==** **----- Start of picture text -----**<br> TO-208AC 2<br>1 2 (TO-65) 3<br>3 ty<br>1 ¼"-28 UNF-2 A<br>1 = Anode, 2 = Cathode, 3 = Gate<br>**----- End of picture text -----**<br> |**Symbol**|**Test Conditions**||**Maximum Ratings**|**Maximum Ratings**|**Features**| |---|---|---|---|---|---| |**IT(RMS)**<br>**IT(AV)M**|TVJ<br>= TVJM<br>Tcase = 85 C; 180 sine<br>Tcase = 80 C; 180 sine||120<br>63<br>69|A<br>A<br>A|G Thyristor for line frequencies<br>G International standard package<br>JEDEC TO-208AC<br>G Planar glassivated chip| |**ITSM**|TVJ= 45 C;<br>VR= 0|t = 10 ms (50 Hz), sine<br>t = 8.3 ms (60 Hz), sine|1200<br>1340|A<br>A|G Long-term stability of blocking<br>currents and voltages| ||TVJ= TVJM<br>VR= 0|t = 10 ms (50 Hz), sine<br>t = 8.3 ms (60 Hz), sine|1100<br>1250|A<br>A|**Applications**<br>G Motor control| |**I2t**|TVJ= 45 C<br>VR= 0|t = 10 ms (50 Hz), sine<br>t = 8.3 ms (60 Hz), sine|7200<br>7550|A2s<br>A2s|G Power converter<br>G AC power controller| ||TVJ= TVJM<br>VR= 0|t = 10 ms (50 Hz), sine<br>t = 8.3 ms (60 Hz), sine|6050<br>6500|A2s<br>A2s|**Advantages**<br>G Space and weight savings| |**(di/dt)cr**|TVJ= TVJM<br>f = 50 Hz, tP=200 s<br>VD= 2/3 VDRM<br>u|repetitive, IT= 150 A|150|A/ s<br>u|G Simple mounting<br>G Improved temperature and power<br>cycling| ||IG= 0.5 A|non repetitive, IT= IT(AV)M|400|A/ s<br>u|| |i|diG/dt = 0.5 A/ s||||| |**(dv/dt)cr**|TVJ= TVJM;<br>VDR= 2/3 VDRM<br>RGK= ; method 1 (linear voltage rise)<br>oe)||1000|V/ s<br>u|**Dimensions in mm (1 mm = 0.0394")**| |**PGM**|TVJ= TVJM<br>IT= IT(AV)M|tP=<br>30 s<br>tP= 500 s|10<br>5|W<br>W|3.| |**PG(AV)**<br>**VRGM**<br>**TVJ**<br>TS|||0.5<br>10<br>-40...+125|W<br>V<br>C<br><— <br>°|="<br>oo| |**TVJM**<br>**Tstg**<br>**Md**<br>**Weight**|Mounting torque||125<br>-40...+125<br>2.5<br>22<br>20|C<br>C<br>Nm<br>lb.in.<br>g|iis CTT<br>a<br>ry<br>T_<br>Li’| - G Thyristor for line frequencies - G International standard package JEDEC TO-208AC - G Planar glassivated chip - G Long-term stability of blocking currents and voltages - G Space and weight savings - G Improved temperature and power cycling ## **Dimensions in mm (1 mm = 0.0394")** Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 1 - 3 © 2000 IXYS All rights reserved **CS 35** |**Symbol**|**Test Conditions**<br>**Characteristic**|**Test Conditions**<br>**Characteristic**|**Test Conditions**<br>**Characteristic**|**Values**| |---|---|---|---|---| |**IR, ID**|TVJ = TVJM; VR= VRRM; VD= VDRM|�|10|mA| |**VT**|IT<br>= 150 A; TVJ= 25�C|�|1.5|V| |**VT0**|For power-loss calculations only (TVJ= 125�C)||0.85|V| |**rT**|||3.5|m�| |**VGT**|VD= 6 V;<br>TVJ= 25�C|�|1.5|V| ||TVJ= -40�C|�|1.9|V| |**IGT**|VD= 6 V;<br>TVJ= 25�C|�|100|mA| ||TVJ= -40�C|�|200|mA| |**VGD**|TVJ= TVJM;<br>VD= 2/3 VDRM|�|0.2|V| |**IGD**||�|1|mA| |**IL**|TVJ= 25�C; tP= 30�s|�|100|mA| ||IG= 0.1 A; diG/dt = 0.1 A/�s|||| |**IH**|TVJ= 25�C; VD= 6 V; RGK=�|�|80|mA| |**tgd**|TVJ= 25�C; VD= 1/2 VDRM|�|2|�s| ||IG= 0.1 A; diG/dt = 0.1 A/�s|||| |**tq**|TVJ= TVJM; IT= 50 A, tP= 200�s; di/dt = -10 A/�s|typ.|100|�s| ||VR= 100 V; dv/dt = 10 V/�s; VD= 2/3 VDRM|||| |**RthJC**|DC current||0.4|K/W| |**RthJH**|DC current||0.6|K/W| |**dS**|Creepage distance on surface||1.7|mm| |**dA**|Strike distance through air||1.7|mm| |**a**|Max. acceleration, 50 Hz||50|m/s2| **==> picture [333 x 233] intentionally omitted <==** **----- Start of picture text -----**<br> 10 500<br>V86 2: P1: PG(AV)GM= 5 W; t= 0.5 WG = 500 � s A typ. lim.<br>4 3: PGM= 10 W; tG = 30 � s 400 TTVJVJ= 25°C= 125°C<br>VG 2 3 IT<br>2<br>1 300<br>1 C<br>0.8<br>0.6 B 200<br>IGD: TVJ= -40°C<br>0.4 IGD: TVJ= 0°C<br>A IGD: TVJ= 25°C<br>100<br>0.2<br>IGD: TVJ= 25°C<br>IGD: TVJ=125°C 2 4 6 8<br>0.1 0<br>10 [0] 10 [1] 10 [2] 10 [3] mA 10 [4] 0 1 2 3 V 4<br>IG VT<br>Fig. 1 Gate trigger range Fig. 2 On-state characteristics<br>Triggering:<br>A = no; B = possible, C = safe<br>**----- End of picture text -----**<br> © 2000 IXYS All rights reserved 2 - 3 **CS 35** **==> picture [520 x 425] intentionally omitted <==** **----- Start of picture text -----**<br> 1200 10 [4] 150<br>A A [2] s VR = 0 V DC<br>1000 A 180° sin<br>120°<br>ITSM 50Hz, 80%VRRM I [2] t 6 TVJ = 45°C IT(AV)M 60°30°<br>800 TVJ = 45°C 4 TVJ = 125°C 100<br>TVJ = 125°C<br>600<br>400 50<br>2<br>200<br>0 10 [3] 0<br>10 [-3] 10 [-2] 10 [-1] 10 [0] s 10 [1] 1 2 3 4 5 6 7 ms8 910 0 50 100 °C 150<br>t t Tcase<br>Fig. 3 Surge overload current Fig. 4 I [2] t versus time (1-10 ms) Fig. 5 Maximum forward current at<br>ITSM: crest value, t: duration case temperature<br>200<br>W RthJA :<br>0.9 K/W<br>150<br>1.3 K/W<br>PT<br>1.6 K/W<br>3.3 K/W<br>100<br>DC<br>180° sin<br>120°<br>60°<br>30°<br>50<br>0<br>0 20 40 60 80 100 120A 1400 50 100 °C 150<br>IT(AV)M Tamb<br>**----- End of picture text -----**<br> Fig. 6 Power dissipation versus on-state current and ambient temperature **==> picture [513 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> RthJH for various conduction angles d:<br>0.8<br>30° d RthJH (K/W)<br>K/W 60°<br>120° DC 0.6<br>180° 180 � 0.65<br>0.6 DC 120 � 0.677<br>ZthJH 6030 �� 0.7250.775<br>0.4<br>Constants for ZthJH calculation:<br>0.2 i Rthi (K/W) ti (s)<br>1 0.01 0.001<br>2 0.09 0.013<br>3 0.30 0.3<br>0.0 4 0.20 0.9<br>10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1] s 10 [2]<br>t<br>**----- End of picture text -----**<br> Fig. 7 Transient thermal impedance junction to heatsink 3 - 3 © 2000 IXYS All rights reserved
Updated at February 9, 2023
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