BZD27C200P
Zener Single Diode, 200 V, 800 mW, SMD, 2 Pins, 175 °C, Surface Mount
- Manufacturer: VISHAY
- Product type: Zener Single Diodes
- Zener Voltage Vz Typ:200V; Power Dissipation Pd:800mW; Diode Case Style:SMD; Zener Tolerance ±:-; No. of Pins:2Pins; Operating Temperature Max:175°C; Product Range:BZD27 Series; Automotive Qualificati
- SVHC: Lead (04-Feb-2026)
- No. of Pins: 2Pins
- Product Range: BZD27
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: SMD
- Power Dissipation: 800mW
- Zener Voltage Nom: 200V
- Operating Temperature Max: 175°C
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.206 € |
| Current stock | 1000+ |
| Lead time | 30 days |
**BZD27C3V6P to BZD27C200P** **==> picture [58 x 49] intentionally omitted <==** # **Vishay Semiconductors** ## **Zener Diodes with Surge Current Specification** **==> picture [34 x 89] intentionally omitted <==** ## **Features** - Sillicon planar Zener diodes - Low profile surface-mount package - Zener and surge current specification - Low leakage current - Excellent stability - High temperature soldering: 260 °C/10 s at terminals - AEC-Q101 qualified - Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC **==> picture [230 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 17249<br>**----- End of picture text -----**<br> ## **Mechanical Data** **Case:** DO-219AB (SMF) **Weight:** approx. 15 mg ## **Packaging codes/options:** GS18/10 k per 13 " reel (8 mm tape), 10 k/box GS08/3 k per 7 " reel (8 mm tape), 15 k/box ## **Absolute Maximum Ratings** Tamb = 25 °C, unless otherwise specified |Parameter|Test condition|Symbol|Value|Unit| |---|---|---|---|---| |Power dissipation|TL= 80 °C|Ptot|2.3|W| ||TA= 25 °C|Ptot|0.81)|W| |Non-repetitive peak pulse power<br>dissipation|100 µs square pulse2)|PZSM|300|W| ||10/1000 µs waveform (BZD27-C7V5P to BZD27-C100P)2)|PRSM|150|W| ||10/1000 µs waveform (BZD27-C110P to BZD27-C200P)2)|PRSM|100|W| ## **Notes** 1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick) 2) TJ = 25 °C prior to surge ## **Thermal Characteristics** Tamb = 25 °C, unless otherwise specified |Parameter|Test condition|Symbol|Value|Unit| |---|---|---|---|---| |Thermal resistancejunction to ambient air1)||RthJA|180|K/W| |Thermal resistance junction to lead||RthJL|30|K/W| |Maximum junction temperature||Tj|150|°C| |Storage temperature range||TS|- 55 to + 150|°C| ## **Note** - 1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (≥ 40 µm thick) Document Number 85810 For technical questions within your region, please contact one of the following: Rev. 2.0, 15-Sep-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 **BZD27C3V6P to BZD27C200P** ## **Vishay Semiconductors** **==> picture [59 x 49] intentionally omitted <==** ## **Electrical Characteristics** Maximum VF = 1.2 V, at IF = 0.2 A (TJ = 25 °C, unless otherwise specified) |Part number|Marking<br>code|Working voltage1)|Working voltage1)|Differential<br>resistance|Differential<br>resistance|Temperature<br>coefficient|Temperature<br>coefficient|Test<br>current|Reverse current at<br>reverse voltage|Reverse current at<br>reverse voltage| |---|---|---|---|---|---|---|---|---|---|---| |||VZat IZT||rdifat IZ||αZat IZ||IZT|IR|VR| |||V||Ω||%/°C||mA|µA|V| |||min.|max.|typ.|max.|min.|max.||max.|| |BZD27C3V6P|D0|3.4|3.8|4|8|- 0.14|- 0.04|100|100|1| |BZD27C3V9P|D1|3.7|4.1|4|8|- 0.14|- 0.04|100|50|1| |BZD27C4V3P|D2|4|4.6|4|7|- 0.12|- 0.02|100|25|1| |BZD27C4V7P|D3|4.4|5|3|7|- 0.1|0|100|10|1| |BZD27C5V1P|D4|4.8|5.4|3|6|- 0.08|0.02|100|5|1| |BZD27C5V6P|D5|5.2|6|2|4|- 0.04|0.04|100|10|2| |BZD27C6V2P|D6|5.8|6.6|2|3|- 0.01|0.06|100|5|2| |BZD27C6V8P|D7|6.4|7.2|1|3|0|0.07|100|10|3| |BZD27C7V5P|D8|7|7.9|1|2|0|0.07|100|50|3| |BZD27C8V2P|D9|7.7|8.7|1|2|0.03|0.08|100|10|3| |BZD27C9V1P|E0|8.5|9.6|2|4|0.03|0.08|50|10|5| |BZD27C10P|E1|9.4|10.6|2|4|0.05|0.09|50|7|7.5| |BZD27C11P|E2|10.4|11.6|4|7|0.05|0.1|50|4|8.2| |BZD27C12P|E3|11.4|12.7|4|7|0.05|0.1|50|3|9.1| |BZD27C13P|E4|12.4|14.1|5|10|0.05|0.1|50|2|10| |BZD27C15P|E5|13.8|15.6|5|10|0.05|0.1|50|1|11| |BZD27C16P|E6|15.3|17.1|6|15|0.06|0.11|25|1|12| |BZD27C18P|E7|16.8|19.1|6|15|0.06|0.11|25|1|13| |BZD27C20P|E8|18.8|21.2|6|15|0.06|0.11|25|1|15| |BZD27C22P|E9|20.8|23.3|6|15|0.06|0.11|25|1|16| |BZD27C24P|F0|22.8|25.6|7|15|0.06|0.11|25|1|18| |BZD27C27P|F1|25.1|28.9|7|15|0.06|0.11|25|1|20| |BZD27C30P|F2|28|32|8|15|0.06|0.11|25|1|22| |BZD27C33P|F3|31|35|8|15|0.06|0.11|25|1|24| |BZD27C36P|F4|34|38|21|40|0.06|0.11|10|1|27| |BZD27C39P|F5|37|41|21|40|0.06|0.11|10|1|30| |BZD27C43P|F6|40|46|24|45|0.07|0.12|10|1|33| |BZD27C47P|F7|44|50|24|45|0.07|0.12|10|1|36| |BZD27C51P|F8|48|54|25|60|0.07|0.12|10|1|39| |BZD27C56P|F9|52|60|25|60|0.07|0.12|10|1|43| |BZD27C62P|G0|58|66|25|80|0.08|0.13|10|1|47| |BZD27C68P|G1|64|72|25|80|0.08|0.13|10|1|51| |BZD27C75P|G2|70|79|30|100|0.08|0.13|10|1|56| |BZD27C82P|G3|77|87|30|100|0.08|0.13|10|1|62| |BZD27C91P|G4|85|96|60|200|0.08|0.13|5|1|68| |BZD27C100P|G5|94|106|60|200|0.09|0.13|5|1|75| |BZD27C110P|G6|104|116|80|250|0.09|0.13|5|1|82| |BZD27C120P|G7|114|127|80|250|0.09|0.13|5|1|91| |BZD27C130P|G8|124|141|110|300|0.09|0.13|5|1|100| |BZD27C150P|G9|138|156|130|300|0.09|0.13|5|1|110| |BZD27C160P|H0|153|171|150|350|0.09|0.13|5|1|120| |BZD27C180P|H1|168|191|180|400|0.09|0.13|5|1|130| |BZD27C200P|H2|188|212|200|500|0.09|0.13|5|1|150| ## **Note** > 1) Pulse test: t ≤ 5 ms p Document Number 85810 For technical questions within your region, please contact one of the following: Rev. 2.0, 15-Sep-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 2 **BZD27C3V6P to BZD27C200P** **==> picture [58 x 49] intentionally omitted <==** ## **Vishay Semiconductors** ## **Electrical Characteristics** Maximum VF = 1.2 V, at IF = 0.2 A (TJ = 25 °C, unless otherwise specified) |Part number|Rev.<br>breakdown<br>voltage|Test current|Temperature coefficient|Temperature coefficient|Clamping voltage|Clamping voltage|Reverse current at<br>stand-off voltage|Reverse current at<br>stand-off voltage| |---|---|---|---|---|---|---|---|---| ||V(BR)Rat<br>Itest|Itest|αZat Itest||VC|at IRSM<br>1)|IR|at VWM| ||V|mA|%/°C||V|A|µA|V| ||min.||min.|max.|max .||max.|| |BZD27C7V5P|7|100|0|0.07|11.3|13.3|1500|6.2| |BZD27C8V2P|7.7|100|0.03|0.08|12.3|12.2|1200|6.8| |BZD27C9V1P|8.5|50|0.03|0.08|13.3|11.3|100|7.5| |BZD27C10P|9.4|50|0.05|0.09|14.8|10.1|20|8.2| |BZD27C11P|10.4|50|0.05|0.1|15.7|9.6|5|9.1| |BZD27C12P|11.4|50|0.05|0.1|17|8.8|5|10| |BZD27C13P|12.4|50|0.05|0.1|18.9|7.9|5|11| |BZD27C15P|13.8|50|0.05|0.1|20.9|7.2|5|12| |BZD27C16P|15.3|25|0.06|0.11|22.9|6.6|5|13| |BZD27C18P|16.8|25|0.06|0.11|25.6|5.9|5|15| |BZD27C20P|18.8|25|0.06|0.11|28.4|5.3|5|16| |BZD27C22P|20.8|25|0.06|0.11|31|4.8|5|18| |BZD27C24P|22.8|25|0.06|0.11|33.8|4.4|5|20| |BZD27C27P|25.1|25|0.06|0.11|38.1|3.9|5|22| |BZD27C30P|28|25|0.06|0.11|42.2|3.6|5|24| |BZD27C33P|31|25|0.06|0.11|46.2|3.2|5|27| |BZD27C36P|34|10|0.06|0.11|50.1|3|5|30| |BZD27C39P|37|10|0.06|0.11|54.1|2.8|5|33| |BZD27C43P|40|10|0.07|0.12|60.7|2.5|5|36| |BZD27C47P|44|10|0.07|0.12|65.5|2.3|5|39| |BZD27C51P|48|10|0.07|0.12|70.8|2.1|5|43| |BZD27C56P|52|10|0.07|0.12|78.6|1.9|5|47| |BZD27C62P|58|10|0.08|0.13|86.5|1.7|5|51| |BZD27C68P|64|10|0.08|0.13|94.4|1.6|5|56| |BZD27C75P|70|10|0.08|0.13|103.5|1.5|5|62| |BZD27C82P|77|10|0.08|0.13|114|1.3|5|68| |BZD27C91P|85|5|0.09|0.13|126|1.2|5|75| |BZD27C100P|94|5|0.09|0.13|139|1.1|5|82| |BZD27C110P|104|5|0.09|0.13|139|0.72|5|91| |BZD27C120P|114|5|0.09|0.13|152|0.65|5|100| |BZD27C130P|124|5|0.09|0.13|169|0.59|5|110| |BZD27C150P|138|5|0.09|0.13|187|0.53|5|120| |BZD27C160P|153|5|0.09|0.13|205|0.48|5|130| |BZD27C180P|168|5|0.09|0.13|229|0.43|5|150| |BZD27C200P|188|5|0.09|0.13|254|0.39|5|160| ## **Note** 1) Non-repetitive peak reverse current in accordance with “IEC 60-1, section 8” (10/1000 ms pulse); see fig. 5 Document Number 85810 For technical questions within your region, please contact one of the following: Rev. 2.0, 15-Sep-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 **BZD27C3V6P to BZD27C200P** ## **Vishay Semiconductors** **==> picture [59 x 49] intentionally omitted <==** ## **Typical Characteristics** Tamb = 25 °C, unless otherwise specified **==> picture [163 x 355] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>Max. VF<br>Typ. VF<br>1<br>0.1<br>0.6 0.8 1.0 1.2 1.4 1.6<br>17411 VF - Forward Voltage (V)<br>Figure 1. Forward Current vs. Forward Voltage<br>10 000<br>C5V1P C6V8P C12P C18P<br>1000<br>100<br>C27P<br>C51P<br>C200P<br>10<br>0 0.5 1.0 1.5 2.0 2.5 3.0<br>17412 VR - Reverse Voltage (V)<br> - Forward Current (A)<br>IF<br> - Typ. Junction Capacitance (pF)<br>D<br>C<br>**----- End of picture text -----**<br> Figure 1. Forward Current vs. Forward Voltage Figure 2. Typ. Diode Capacitance vs. Reverse Voltage **==> picture [164 x 153] intentionally omitted <==** **----- Start of picture text -----**<br> 160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 50 100 150 200<br>17414 VZnom - Zener Voltage (V)<br> - Max. Pulse Power Dissipation (W)<br>RSM<br>P<br>**----- End of picture text -----**<br> Figure 4. Maximum Pulse Power Dissipation vs. Zener Voltage **==> picture [178 x 141] intentionally omitted <==** **----- Start of picture text -----**<br> IRSM<br>(%)<br>t1 = 10 µs<br>100 t2 = 1000 µs<br>90<br>50<br>10<br>t<br>t1<br>17415 t 2<br>**----- End of picture text -----**<br> Figure 5. Non-Repetitive Peak Reverse Current Pulse Definition **==> picture [163 x 153] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>2.5 Tie point temperature<br>2.0<br>1.5<br>1.0 Ambient temperature<br>0.5<br>0<br>0 25 50 75 100 125 150<br>17413 Tamb - Ambient Temperature (°C)<br> - Power Dissipation (W)<br>tot<br>P<br>**----- End of picture text -----**<br> Figure 3. Power Dissipation vs. Ambient Temperature Document Number 85810 For technical questions within your region, please contact one of the following: Rev. 2.0, 15-Sep-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 4 **BZD27C3V6P to BZD27C200P** **==> picture [58 x 49] intentionally omitted <==** ## **Vishay Semiconductors** ## **Package Dimensions** in millimeters (inches): **DO219-AB (SMF)** **==> picture [353 x 411] intentionally omitted <==** **----- Start of picture text -----**<br> 0.85 (0.033)<br>0.35 (0.014)<br> Detail Z<br> enlarged<br>1.08 (0.043)<br>2.9 (0.114)<br>0.88 (0.035)<br>2.7 (0.106)<br>3.9 (0.154)<br>3.5 (0.138)<br>Foot print recommendation:<br>1.3 (0.051) 1.3 (0.051)<br>Created - Date: 15. February 2005<br>Rev. 3 - Date: 13. March 2007<br>Document no.:S8-V-3915.01-001 (4) 2.9 (0.114)<br>17247<br>5<br>5<br>0.25 (0.010) 0.05 (0.002) 0.1 (0.004) 0 (0.000)<br>1.2 (0.047) 0.8 (0.031)<br>1.9 (0.075) 1.7 (0.067)<br>1.4 (0.055)<br>**----- End of picture text -----**<br> Document Number 85810 For technical questions within your region, please contact one of the following: Rev. 2.0, 15-Sep-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 **BZD27C3V6P to BZD27C200P** ## **Vishay Semiconductors** **==> picture [59 x 49] intentionally omitted <==** ## **Blistertape Dimensions for SMF** in millimeters **==> picture [376 x 513] intentionally omitted <==** **----- Start of picture text -----**<br> PS<br>Document-No.: S8-V-3717.02-001 (3)<br>18513<br>**----- End of picture text -----**<br> Document Number 85810 For technical questions within your region, please contact one of the following: Rev. 2.0, 15-Sep-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 6 **Legal Disclaimer Notice** Vishay **==> picture [59 x 48] intentionally omitted <==** ## **Disclaimer** ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1
Updated at April 28, 2026
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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