BSZ0909NDXTMA1

Dual MOSFET, N Channel, 30 V, 30 V, 20 A, 20 A, 0.018 ohm

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Manufacturer: INFINEON
Product type: Dual MOSFETs
Transistor Polarity:Dual N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0145ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vg
MSL: MSL 1 - Unlimited
SVHC: No SVHC (27-Jun-2018)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: -
Qualification: -
Transistor Case Style: WISON
Operating Temperature Max: 150°C
Power Dissipation N Channel: 17W
Power Dissipation P Channel: 17W
Drain Source Voltage Vds N Channel: 30V
Drain Source Voltage Vds P Channel: 30V
Continuous Drain Current Id N Channel: 20A
Continuous Drain Current Id P Channel: 20A
Drain Source On State Resistance N Channel: 0.018ohm
Drain Source On State Resistance P Channel: -

Delivery and price
Units per pack	1
Price	0.264 €
Current stock	10+
Lead time	30 days

Datasheet

**BSZ0909ND** 

## **MOSFET** 

## **Features** 

|**Parameter**|**Value**|**Unit**|
|---|---|---|
|_V_DS|30|V|
|_R_DS(on),max|18|mΩ|
|_I_D|20|A|
|_Q_OSS|2.3|nC|
|_Q_G(0V..4.5V)|1.8|nC|



|~~Type/OrderingCode~~<br>~~|~~|**Package**<br>~~|~~<br>~~|~~|**Marking**|~~RelatedLinks~~|
|---|---|---|---|
|BSZ0909ND<br>~~Type/OrderingCode~~<br>~~|~~|PG-WISON-8<br>~~|~~<br>~~|~~|0909ND|-<br>~~Related Links~~|



Final Data Sheet 

1 

**PowerStage�3x3 BSZ0909ND** 

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## **Table�of�Contents** 

Description   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 

Final Data Sheet 

2 

Rev.�2.0,��2016-12-05 

**PowerStage�3x3 BSZ0909ND** 

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**1�����Maximum�ratings** at� _T_ j=25�°C,�unless�otherwise�specified,�one�transistor�active 

## **Table�2�����Maximum�ratings** 

|**Table2Maximumratings**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Continuous drain current|_I_D|-<br>-<br>-<br>-|-<br>-<br>-<br>-|20<br>8.1<br>5.5<br>4.1|A|_V_GS=10V,_T_C=25°C<br>_V_GS=10V,_T_A=25°C1)<br>_V_GS=4.5V,_T_A=70°C1)<br>_V_GS=4.5V,_T_A=25°C2)|
|Pulsed drain current3)|_I_D,pulse|-|-|40|A|_T_C=25°C|
|Avalanche energy, single pulse|_E_AS|-|-|4|mJ|_I_D=9A,_R_GS=25Ω|
|Gate source voltage|_V_GS|-20|-|20|V|-|
|Power dissipation|_P_tot|-<br>-|17<br>1.9|-<br>-|W|_T_C=25°C<br>_T_A=25°C,_R_thJA=65°C/W1)|
|Operating and storage temperature|_T_j,_T_stg|-55|-|150|°C|IEC climatic category;<br>DIN IEC 68-1: 55/150/56|



## **2�����Thermal�characteristics** 

## **Table�3�����Thermal�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Thermal resistance,junction - case|_R_thJC|-|-|7.5|°C/W|-|
|Device on PCB,<br>minimal footprint|_R_thJA|-|-|180|°C/W|-|
|Device on PCB,<br>6 cm2cooling area|_R_thJA|-|-|65|°C/W|-|



> 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 

> 2) device mounted on a minimum pad (one layer, 70 µm thick) 

> 3) See Diagram 3 for more detailed information 

Final Data Sheet 

3 

Rev.�2.0,��2016-12-05 

**PowerStage�3x3 BSZ0909ND** 

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## **3�����Electrical�characteristics** 

## **Table�4�����Static�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Drain-source breakdown voltage|_V_(BR)DSS|30|-|-|V|_V_GS=0V,_I_D=1mA|
|Gate threshold voltage|_V_GS(th)|1.2|1.6|2|V|_V_DS=_V_GS,_I_D=250µA|
|Zero gate voltage drain current|_I_DSS|-<br>-|-<br>-|1<br>100|µA|_V_DS=30V,_V_GS=0V,_T_j=25°C<br>_V_DS=30V,_V_GS=0V,_T_j=150°C|
|Gate-source leakage current|_I_GSS|-|-|100|nA|_V_GS=20V,_V_DS=0V|
|Drain-source on-state resistance|_R_DS(on)|-<br>-|20<br>14.5|25<br>18|mΩ|_V_GS=4.5V,_I_D=9A<br>_V_GS=10V,_I_D=9A|
|Gate resistance1)|_R_G|3.5|7|14|Ω|-|
|Transconductance|_g_fs|-|22|-|S||_V_DS|>2|_I_D|_R_DS(on)max,_I_D=9A|



## **Table�5�����Dynamic�characteristics** 

|**Parameter**|**Symbol**||**Values**|**Values**|**Unit**|**Note/TestCondition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Input capacitance1)|_C_iss|-|270|360|pF|_V_GS=0V,_V_DS=15V,_f_=1MHz|
|Output capacitance1)|_C_oss|-|88|120|pF|_V_GS=0V,_V_DS=15V,_f_=1MHz|
|Reverse transfer capacitance|Crss|-|11|-|pF|_V_GS=0V,_V_DS=15V,_f_=1MHz|
|Turn-on delay time|_t_d(on)|-|5|-|ns|_V_DD=15V,_V_GS=10V,_I_D=9A,<br>_R_G,ext=6Ω|
|Rise time|_t_r|-|2.5|-|ns|_V_DD=15V,_V_GS=10V,_I_D=9A,<br>_R_G,ext=6Ω|
|Turn-off delay time|_t_d(off)|-|15|-|ns|_V_DD=15V,_V_GS=10V,_I_D=9A,<br>_R_G,ext=6Ω|
|Fall time|_t_f|-|2|-|ns|_V_DD=15V,_V_GS=10V,_I_D=9A,<br>_R_G,ext=6Ω|



## **Table�6�����Gate�charge�characteristics[2)]** 

|**Table6Gatechargecharacte**|**ristics2)**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Gate to source charge|_Q_gs|-|0.8|-|nC|_V_DD=15V,_I_D=9A,_V_GS=0to4.5V|
|Gate charge at threshold|_Q_g(th)|-|0.4|-|nC|_V_DD=15V,_I_D=9A,_V_GS=0to4.5V|
|Gate to drain charge|_Q_gd|-|0.5|-|nC|_V_DD=15V,_I_D=9A,_V_GS=0to4.5V|
|Switchingcharge|_Q_sw|-|0.8|-|nC|_V_DD=15V,_I_D=9A,_V_GS=0to4.5V|
|Gate charge total|_Q_g|-|1.8|2.6|nC|_V_DD=15V,_I_D=9A,_V_GS=0to4.5V|
|Gate plateau voltage|_V_plateau|-|2.8|-|V|_V_DD=15V,_I_D=9A,_V_GS=0to4.5V|
|Gate charge total|_Q_g|-|3.7|5.2|nC|_V_DD=15V,_I_D=9A,_V_GS=0to10V|
|Gate charge total, sync. FET|_Q_g(sync)|-|1.5|-|nC|_V_DS=0.1V,_V_GS=0to4.5V|
|Output charge|_Q_oss|-|2.3|-|nC|_V_DD=15V,_V_GS=0V|



> 1) Defined by design. Not subject to production test. 

> 2) See ″ Gate charge waveforms ″ for parameter definition Final Data Sheet 

Rev.�2.0,��2016-12-05 

4 

**PowerStage�3x3 BSZ0909ND** 

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## **Table�7�����Reverse�diode** 

|**Table7Reversediode**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**||**Values**||**Unit**|**Note/TestCondition**|
|||**Min.**|**Typ.**|**Max.**|||
|Diode continuous forward current|_I_S|-|-|17|A|_T_C=25°C|
|Diode pulse current|_I_S,pulse|-|-|40|A|_T_C=25°C|
|Diode forward voltage|_V_SD|-|0.92|1.2|V|_V_GS=0V,_I_F=9A,_T_j=25°C|
|Reverse recoverycharge|_Q_rr|-|5|-|nC|_V_R=15V,_I_F=9A,d_i_F/d_t_=400A/µs|



Final Data Sheet 

Rev.�2.0,��2016-12-05 

5 

**BSZ0909ND** 

**==> picture [528 x 633] intentionally omitted <==**

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Final Data Sheet 

6 

**BSZ0909ND** 

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Final Data Sheet 

7 

**BSZ0909ND** 

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**----- Start of picture text -----**<br>
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Final Data Sheet 

8 

**BSZ0909ND** 

**==> picture [524 x 634] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 [1] 12<br>15 V<br>10<br>25 °C 6 V<br>NUM eco | oe<br>100 °C 24 V<br>NUN TINE tT y 4,<br>8<br>UN 125 °C ONHIING TTT Sea<br>10 [0] 6<br>c WWN ONL fe SO<br>EHP<br>4<br>LUCoMPETTINGSSSTENTNu || = EL LSY v<br>2<br>Ni Y T) ft ty<br>10 [-1] 0<br>\ fi | | | | | | |<br>10 [0] 10 [1] 10 [2] 10 [3] 0 1 2 3 4<br>t AV [us] Q gate [nC]<br>I AS=f( t AV )} R GS =25 Ω  ; parameter: T j(start) V GS=f( Q gate ); I D =9 A pulsed; parameter: V DD<br>Plagram 1; Drain-source breakdown voltage pT Gate charge waveforms<br>34<br>i<br>a a Ves<br>32 ia<br>ii Q Q<br>cl<br>30<br>a<br>iI cs sO<br>28 ce<br>aa<br>a<br>a<br>26<br>i<br>a<br>a<br>i<br>24<br>a<br>i<br>22 aa re; Qgae<br>a<br>a<br>20 = Qys Oye<br>-60 -20 20 60 100 140 180<br>T j<br>V BR(DSS)=f( T j I D po<br>I AV V GS<br>BR(DSS)<br>V<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
pT Gate charge waveforms<br>**----- End of picture text -----**<br>


Final Data Sheet 

9 

**BSZ0909ND** 

Final Data Sheet 

10 

**BSZ0909ND** 

## BSZ0909ND 

|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects (major changes since last revision)|
|2.0|2016-12-05|Release of final version|



## **erratum@infineon.com** 

## **Information** 

**www.infineon.com** ). 

## **Warnings** 

Final Data Sheet 

11

Updated at April 13, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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