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BLF573
RF FET Transistor, 50 V, 42 A, 108 MHz, 225 MHz, SOT-502A
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- Manufacturer: NXP
- Product type: RF FETs
- Drain Source Voltage Vds:50V; Continuous Drain Current Id:42A; Power Dissipation Pd:-; Operating Frequency Min:108MHz; Operating Frequency Max:225MHz; RF Transistor Case:SOT-502A; No. of Pins
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Power Dissipation: -
- Transistor Mounting: Flange
- Transistor Case Style: SOT-502A
- Operating Frequency Max: 225MHz
- Operating Frequency Min: 108MHz
- Drain Source Voltage Vds: 50V
- Operating Temperature Max: 225°C
- Continuous Drain Current Id: 42A
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 92.23 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**BLF573; BLF573S HF / VHF power LDMOS transistor** **Product data sheet** **Rev. 3 — 8 July 2010** ## **1. Product profile** ## **1.1 General description** A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. **Table 1. Production test information** |**Mode of operation**|**f**|**VDS**|**PL**|**Gp**|η**D**| |---|---|---|---|---|---| ||**(MHz)**|**(V)**|**(W)**|**(dB)**|**(%)**| |CW|225|50|300|27.2|70| ## **CAUTION** **==> picture [40 x 35] intentionally omitted <==** This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. ## **1.2 Features and benefits** - Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: - Average output power = 300 W - Power gain = 27.2 dB - Efficiency = 70 % - Easy power control - Integrated ESD protection - Excellent ruggedness - High efficiency - Excellent thermal stability - Designed for broadband operation (HF and VHF band) - Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) ## **1.3 Applications** - Industrial, scientific and medical applications - Broadcast transmitter applications **==> picture [172 x 101] intentionally omitted <==** **BLF573 BLF573S ;** **NXP Semiconductors** **HF / VHF power LDMOS transistor** ## **2. Pinning information** **==> picture [396 x 194] intentionally omitted <==** **----- Start of picture text -----**<br> Table 2. Pinning<br>Pin Description Simplified outline Graphic symbol<br>BLF573 (SOT502A)<br>1 drain<br>1 1<br>2 gate<br>3<br>3 source [1]<br>2 2<br>3<br>sym112<br>BLF573S (SOT502B)<br>1 drain<br>1 1<br>2 gate<br>3<br>3 source [1]<br>2 2<br>3<br>sym112<br>**----- End of picture text -----**<br> [1] Connected to flange. ## **3. Ordering information** **Table 3. Ordering information** |**Type number**|**Package**|**Package**|**Package**| |---|---|---|---| ||**Name**|**Description**<br>|**Version**| |BLF573|-<br>flanged LDMOST ceramic package; 2 mounting holes; 2 leads<br>SOT502A||| |BLF573S|-<br>earless flanged LDMOST ceramic package, 2 leads<br>SOT502B||| ## **4. Limiting values** **Table 4. Limiting values** _In accordance with the Absolute Maximum Rating System (IEC 60134)._ |**Symbol**|**Parameter**|**Conditions**|**Min**|**Max**|**Unit**| |---|---|---|---|---|---| |VDS|drain-source voltage||-|110|V| |VGS|gate-source voltage||−0.5|+11|V| |ID|drain current||-|42|A| |Tstg|storage temperature||−65|+150|°C| |Tj|junction temperature||-|225|°C| ## **5. Thermal characteristics** **Table 5. Thermal characteristics** |**Symbol**|**Parameter**|**Conditions**||**Typ**|**Unit**| |---|---|---|---|---|---| |Rth(j-c)|thermal resistance from|Tcase= 80°C; PL= 300 W|[1]|0.21|K/W| ||junction to case||||| [1] Rth(j-c) is measured under RF conditions. All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. BLF573_BLF573S **Product data sheet** **Rev. 3 — 8 July 2010** **2 of 16** **BLF573 BLF573S ;** **NXP Semiconductors** **HF / VHF power LDMOS transistor** ## **6. Characteristics** ## **Table 6. DC characteristics** _Tj = 25_ ° _C unless otherwise specified._ |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |V(BR)DSS|drain-source breakdown voltage|VGS= 0 V; ID= 3.75 mA|110|-|-|V| |VGS(th)|gate-source threshold voltage|VDS= 10 V; ID= 375 mA|1.25|1.7|2.25|V| |VGSq|gate-source quiescent voltage|VDS= 50 V; ID= 900 mA|1.45|1.95|2.45|V| |IDSS|drain leakage current|VGS= 0 V; VDS= 50 V|-|-|4.2|μA| |IDSX|drain cut-off current|VGS= VGS(th)+ 3.75 V;|44|56|-|A| |||VDS= 10 V||||| |IGSS|gate leakage current|VGS= 11 V; VDS= 0 V|-|-|420|nA| |gfs|forward transconductance|VDS= 10 V; ID= 18.75 A|-|20|-|S| |RDS(on)|drain-source on-state resistance|VGS= VGS(th)+ 3.75 V;|-|0.09|-|Ω| |||ID= 12.49 A||||| |Crs|feedback capacitance|VGS= 0 V; VDS= 50 V;|-|2.3|-|pF| |||f = 1 MHz||||| |Ciss|input capacitance|VGS= 0 V; VDS= 50 V;|-|300|-|pF| |||f = 1 MHz||||| |Coss|output capacitance|VGS= 0 V; VDS= 50 V;|-|103|-|pF| |||f = 1 MHz||||| ## **Table 7. RF characteristics** _Mode of operation: CW; f = 225 MHz; RF performance at VDS = 50 V; IDq = 900 mA; Tcase = 25_ ° _C; unless otherwise specified; in a class-AB production test circuit._ |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |Gp|power gain|PL= 300 W|26|27.2|28.4|dB| |RLin|input return loss|PL= 300 W|10|13|-|dB| |ηD|drain efficiency|PL= 300 W|67|70|-|%| © NXP B.V. 2010. All rights reserved. BLF573_BLF573S **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 3 — 8 July 2010** **3 of 16** **BLF573 BLF573S ;** **NXP Semiconductors** **HF / VHF power LDMOS transistor** **==> picture [272 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> 001aaj141<br>800<br>Coss<br>(pF)<br>600<br>400<br>200<br>0<br>0 10 20 30 40 50<br>VDS (V)<br>VGS = 0 V; f = 1 MHz.<br>**----- End of picture text -----**<br> **Fig 1. Output capacitance as a function of drain-source voltage; capacitance value without internal matching** ## **6.1 Ruggedness in class-AB operation** The BLF573 and BLF573S are capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 900 mA; PL = 300 W; f = 225 MHz. ## **7. Application information** ## **7.1 Impedance information** **==> picture [179 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> Table 8. Typical impedance<br>Measured ZS and ZL test circuit impedances.<br>**----- End of picture text -----**<br> |**f**|**ZS**||**ZL**|| |---|---|---|---|---| |**MHz**|Ω||Ω|| |225|0.7|+ j2.0|1.95|+ j2.0| **==> picture [230 x 110] intentionally omitted <==** **----- Start of picture text -----**<br> drain<br>ZL<br>gate<br>ZS<br>001aaf059<br>Fig 2. Definition of transistor impedance<br>**----- End of picture text -----**<br> © NXP B.V. 2010. All rights reserved. BLF573_BLF573S **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 3 — 8 July 2010** **4 of 16** **BLF573 BLF573S ;** **NXP Semiconductors** **HF / VHF power LDMOS transistor** ## **7.2 Reliability** **==> picture [361 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 001aaj142<br>10 [5]<br>Years<br>(1) (2) (3) (4) (5) (6)<br>10 [4]<br>10 [3]<br>10 [2]<br>10<br>(7) (8) (9) (10) (11)<br>1<br>0 4 8 12 16 20<br>Idc (A)<br>**----- End of picture text -----**<br> TTF (0.1 % failure fraction). (1) Tj = 100 °C (2) Tj = 110 °C (3) Tj = 120 °C (4) Tj = 130 °C (5) Tj = 140 °C (6) Tj = 150 °C (7) Tj = 160 °C (8) Tj = 170 °C (9) Tj = 180 °C (10) Tj = 190 °C (11) Tj = 200 °C **Fig 3. BLF573 and BLF573S electromigration (ID, total device)** © NXP B.V. 2010. All rights reserved. BLF573_BLF573S **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 3 — 8 July 2010** **5 of 16** **BLF573 BLF573S ;** **NXP Semiconductors** **HF / VHF power LDMOS transistor** ## **8. Test information** ## **8.1 RF Performance** The following figures are measured in a class-AB production test circuit. ## **8.1.1 1-Tone CW** **==> picture [481 x 223] intentionally omitted <==** **----- Start of picture text -----**<br> 001aaj612 001aaj613<br>30 80 30<br>(dB)Gp (%)ηD (dB)Gp (7)(6)<br>(5)<br>28 60 28<br>Gp<br>(1)<br>26 ηD 40 26 (2)<br>(3)<br>(4)<br>24 20 24<br>22 0 22<br>0 100 200 300 400 0 100 200 300 400<br>PL (W) PL (W)<br>VDS = 50 V; IDq = 900 mA; f = 225 MHz. VDS = 50 V; f = 225 MHz.<br>(1) IDq = 500 mA<br>**----- End of picture text -----**<br> (2) IDq = 700 mA (3) IDq = 900 mA (4) IDq = 1100 mA (5) IDq = 1300 mA (6) IDq = 1500 mA (7) IDq = 1700 mA **Fig 4. Power gain and drain efficiency as functions Fig 5. Power gain as function of load power; typical of load power; typical values values** © NXP B.V. 2010. All rights reserved. BLF573_BLF573S **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 3 — 8 July 2010** **6 of 16** **BLF573 BLF573S ; HF / VHF power LDMOS transistor** **NXP Semiconductors** **==> picture [233 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> 001aaj614<br>60<br>PL<br>(dBm)<br>58 Ideal PL<br>(2)<br>56 (1)<br>PL<br>54<br>52<br>50<br>24 26 28 30 32 34<br>Pi (dBm)<br>**----- End of picture text -----**<br> VDS = 50 V; IDq = 900 mA; f = 225 MHz. - (1) PL(1dB) = 55.2 dBm (330 W) - (2) PL(3dB) = 55.8 dBm (380 W) **Fig 6. Load power as function of input power; typical values** © NXP B.V. 2010. All rights reserved. BLF573_BLF573S **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 3 — 8 July 2010** **7 of 16** **BLF573 BLF573S ;** **NXP Semiconductors** **HF / VHF power LDMOS transistor** ## **8.1.2 2-Tone CW** **==> picture [497 x 367] intentionally omitted <==** **----- Start of picture text -----**<br> 001aaj615 001aaj616<br>30 80 0<br>Gp ηD IMD3<br>(dB) (%) (dBc)<br>28 60 −20<br>Gp<br>26 ηD 40 −40<br>(1)<br>(2)<br>(3)<br>(8) (4)<br>24 20 −60 (7) (5)<br>(6)<br>22 0 −80<br>0 100 200 300 400 500 0 100 200 300 400 500<br>PL(PEP) (W) PL(PEP) (W)<br>VDS = 50 V; IDq = 900 mA; f1 = 224.95 MHz; VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz.<br>f2 = 225.05 MHz. (1) IDq = 500 mA<br>(2) IDq = 700 mA<br>(3) IDq = 900 mA<br>(4) IDq = 1100 mA<br>(5) IDq = 1300 mA<br>(6) IDq = 1500 mA<br>(7) IDq = 1700 mA<br>(8) IDq = 1800 mA<br>Fig 7. Power gain and drain efficiency as functions Fig 8. Third order intermodulation distortion as a<br>of peak envelope load power; typical values function of peak envelope load power; typical<br>values<br>**----- End of picture text -----**<br> ## **8.2 Test circuit** **Table 9. List of components** _For production test circuit, see Figure 9 and Figure 10._ _Printed-Circuit Board (PCB): Rogers 5880;_ ε _r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35_ μ _m._ |**Component**|**Description**|**Value**||**Remarks**| |---|---|---|---|---| |B1|ferrite SMD bead|100Ω; 100 MHz||Ferroxcube BDS3/3/8.9-4S2 or equivalent| |C1, C18|multilayer ceramic chip capacitor|100 pF|[1]|| |C2|multilayer ceramic chip capacitor|39 pF|[1]|| |C3, C4|multilayer ceramic chip capacitor|180 pF|[1]|| |C5, C6, C7|multilayer ceramic chip capacitor|220 pF|[1]|| |C8, C20|multilayer ceramic chip capacitor|1 nF|[1]|| |C9|multilayer ceramic chip capacitor|4.7μF||TDK C4532X7R1E475MT020U or equivalent| |C10|multilayer ceramic chip capacitor|30 pF|[1]|| |C11, C12, C13|multilayer ceramic chip capacitor|51 pF|[1]|| |C14|multilayer ceramic chip capacitor|43 pF|[1]|| All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. BLF573_BLF573S **Product data sheet** **Rev. 3 — 8 July 2010** **8 of 16** **BLF573 BLF573S ; HF / VHF power LDMOS transistor** **NXP Semiconductors** **Table 9. List of components** _…continued For production test circuit, see Figure 9 and Figure 10. Printed-Circuit Board (PCB): Rogers 5880;_ ε _r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35_ μ _m._ |**Component**|**Description**|**Value**||**Remarks**| |---|---|---|---|---| |C15|multilayer ceramic chip capacitor|33 pF|[1]|| |C16|multilayer ceramic chip capacitor|36 pF|[1]|| |C17|multilayer ceramic chip capacitor|16 pF|[1]|| |C19|electrolytic capacitor|220μF; 63 V||| |L1|2 turns enamelled copper wire|D = 3 mm;||| |||d = 1 mm;||| |||length = 2 mm;||| |||leads = 2×6 mm||| |L2|4 turns enamelled copper wire|D = 2 mm;||| |||d = 1 mm;||| |||length = 13 mm;||| |||leads = 2×5 mm||| |L3|stripline|-||(L×W) 96 mm×3 mm| |L4, L5|stripline|-||(L×W) 15 mm×8 mm| |L6|stripline|-||(L×W) 105 mm×6 mm| |L7|stripline|-||(L×W) 3 mm×6 mm| |L8|stripline|-||(L×W) 12 mm×6 mm| |R1|metal film resistor|100Ω; 0.6 W||| [1] American Technical Ceramics type 100B or capacitor of same quality. **==> picture [415 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> VDD<br>C19<br>VGG<br>C9<br>B1<br>C8 C20<br>R1 L1<br>C13 C14<br>input C3 C7 output<br>50 Ω C1 L3 L2 L7 L8 C18 50 Ω<br>L4 L5 L6<br>C2 C4 C10 C16 C17<br>C5 C6<br>C11 C12<br>C15<br>001aaj148<br>**----- End of picture text -----**<br> **Fig 9. Class-AB common-source production test circuit** © NXP B.V. 2010. All rights reserved. BLF573_BLF573S All information provided in this document is subject to legal disclaimers. **Rev. 3 — 8 July 2010** **Product data sheet** **9 of 16** **BLF573 BLF573S ;** **NXP Semiconductors** **HF / VHF power LDMOS transistor** **==> picture [467 x 189] intentionally omitted <==** **----- Start of picture text -----**<br> B1<br>C19<br>C9<br>C8 C20<br>C13 C14<br>C3 C7 L2<br>R1 L1<br>C1 C18<br>C2 C4 C5 C6<br>C17<br>C11 C12<br>C16<br>C10 C15<br>**----- End of picture text -----**<br> **==> picture [29 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> 001aaj149<br>**----- End of picture text -----**<br> **Fig 10. Component layout for class-AB production test circuit** All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. **Rev. 3 — 8 July 2010 10 of 16** BLF573_BLF573S **Product data sheet** **10 of 16** **BLF573 BLF573S ;** **NXP Semiconductors** **HF / VHF power LDMOS transistor** ## **9. Package outline** **Flanged LDMOST ceramic package; 2 mounting holes; 2 leads** ## **SOT502A** **==> picture [478 x 570] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>A<br>F<br>3<br>D1<br>U1 B<br>q C c<br>1<br>L<br>H U2 p E1 E<br>w1 M A M B M<br>A<br>2<br>b w2 M C M Q<br>0 5 10 mm<br>scale<br>DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)<br>UNIT A b c D D1 E E1 F H L p Q q U1 U2 w1 w2<br>4.72 12.83 0.15 20.02 19.96 9.50 9.53 1.14 19.94 5.33 3.38 1.70 34.16 9.91<br>mm 3.43 12.57 0.08 19.61 19.66 9.30 9.25 0.89 18.92 4.32 3.12 1.45 27.94 33.91 9.65 0.25 0.51<br>0.186 0.505 0.006 0.788 0.786 0.374 0.375 0.045 0.785 0.210 0.133 0.067 1.345 0.390<br>inches 1.100 0.01 0.02<br>0.135 0.495 0.003 0.772 0.774 0.366 0.364 0.035 0.745 0.170 0.123 0.057 1.335 0.380<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>99-12-28<br> SOT502A<br>03-01-10<br>**----- End of picture text -----**<br> **Fig 11. Package outline SOT502A** BLF573_BLF573S **Product data sheet** All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. **Rev. 3 — 8 July 2010** **11 of 16** **BLF573 BLF573S ;** **NXP Semiconductors** **HF / VHF power LDMOS transistor** ## **Earless flanged LDMOST ceramic package; 2 leads** ## **SOT502B** **==> picture [325 x 321] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>A<br>F<br>3<br>D1 D<br>U1 c<br>1<br>L<br>H U2 E1 E<br>2<br>b w2 M D M Q<br>0 5 10 mm<br>scale<br>**----- End of picture text -----**<br> **==> picture [458 x 141] intentionally omitted <==** **----- Start of picture text -----**<br> DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)<br>UNIT A b c D D1 E E1 F H L Q U1 U2 w2<br>4.72 12.83 0.15 20.02 19.96 9.50 9.53 1.14 19.94 5.33 1.70 20.70 9.91<br>mm 3.43 12.57 0.08 19.61 19.66 9.30 9.25 0.89 18.92 4.32 1.45 20.45 9.65 0.25<br>0.186 0.505 0.006 0.788 0.786 0.374 0.375 0.045 0.785 0.210 0.067 0.815 0.390<br>inches 0.010<br>0.135 0.495 0.003 0.772 0.774 0.366 0.364 0.035 0.745 0.170 0.057 0.805 0.380<br>OUTLINE REFERENCES EUROPEAN<br>ISSUE DATE<br>VERSION IEC JEDEC JEITA PROJECTION<br>03-01-10<br> SOT502B<br>07-05-09<br>**----- End of picture text -----**<br> All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. **Fig 12. Package outline SOT502B** BLF573_BLF573S **Product data sheet** **Rev. 3 — 8 July 2010** **12 of 16** **BLF573 BLF573S ;** **NXP Semiconductors** **HF / VHF power LDMOS transistor** ## **10. Abbreviations** ## **Table 10. Abbreviations** |**Acronym**|**Description**| |---|---| |CW|Continuous Wave| |EDGE|Enhanced Data rates for GSM Evolution| |GSM|Global System for Mobile communications| |HF|High Frequency| |LDMOS|Laterally Diffused Metal-Oxide Semiconductor| |LDMOST|Laterally Diffused Metal-Oxide Semiconductor Transistor| |RF|Radio Frequency| |SMD|Surface Mount Device| |TTF|Time To Failure| |VHF|Very High Frequency| |VSWR|Voltage Standing-Wave Ratio| ## **11. Revision history** **Table 11. Revision history** |**Document ID**|**Release date**|**Data sheet status**|**Change notice**|**Supersedes**| |---|---|---|---|---| |BLF573_BLF573S v.3|20100708|Product data sheet|-|BLF573S v.2| |Modifications:|**•** The document now describes both the eared and earless version of this product:|||| ||BLF573 and BLF573S respectively.|||| |BLF573S v.2|20090217|Product data sheet|-|BLF573S v.1| |BLF573S v.1|20081208|Preliminary data sheet|-|-| © NXP B.V. 2010. All rights reserved. BLF573_BLF573S **Product data sheet** All information provided in this document is subject to legal disclaimers. **Rev. 3 — 8 July 2010** **13 of 16** **BLF573 BLF573S ;** **NXP Semiconductors** **HF / VHF power LDMOS transistor** ## **12. Legal information** ## **12.1 Data sheet status** |**Document status[1]**<br>**[2]**|**Product statu**~~**s**~~**[3]**|**Definition**| |---|---|---| |Objective [short] data sheet|Development|This document contains data from the objective specification for product development.| |Preliminary [short] data sheet|Qualification|This document contains data from the preliminary specification.| |Product [short] data sheet|Production|This document contains the product specification.| [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. ## **12.2 Definitions** **Draft —** The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. **Short data sheet —** A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. **Product specification —** The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ## **12.3 Disclaimers** **Limited warranty and liability —** Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the _Terms and conditions of commercial sale_ of NXP Semiconductors. **Right to make changes —** NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. **Suitability for use —** NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. **Applications —** Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. **Limiting values —** Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. **Terms and conditions of commercial sale —** NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. **No offer to sell or license —** Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. **Export control —** This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. BLF573_BLF573S All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. **Product data sheet 14 of 16** **Rev. 3 — 8 July 2010** **14 of 16** **BLF573 BLF573S ;** **NXP Semiconductors** ## **HF / VHF power LDMOS transistor** **Non-automotive qualified products —** Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. ## **12.4 Trademarks** Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. ## **13. Contact information** For more information, please visit: **http://www.nxp.com** For sales office addresses, please send an email to: **salesaddresses@nxp.com** © NXP B.V. 2010. All rights reserved. BLF573_BLF573S All information provided in this document is subject to legal disclaimers. **Product data sheet** **Rev. 3 — 8 July 2010** **15 of 16** **BLF573 BLF573S ;** **NXP Semiconductors** **HF / VHF power LDMOS transistor** ## **14. Contents** |**1**|**Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1**| |---|---| |1.1|General description . . . . . . . . . . . . . . . . . . . . . 1| |1.2|Features and benefits. . . . . . . . . . . . . . . . . . . . 1| |1.3|Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |**2**|**Pinning information. . . . . . . . . . . . . . . . . . . . . . 2**| |**3**|**Ordering information. . . . . . . . . . . . . . . . . . . . . 2**| |**4**|**Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2**| |**5**|**Thermal characteristics . . . . . . . . . . . . . . . . . . 2**| |**6**|**Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3**| |6.1|Ruggedness in class-AB operation . . . . . . . . . 4| |**7**|**Application information. . . . . . . . . . . . . . . . . . . 4**| |7.1|Impedance information . . . . . . . . . . . . . . . . . . . 4| |7.2|Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**8**|**Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6**| |8.1|RF Performance . . . . . . . . . . . . . . . . . . . . . . . . 6| |8.1.1|1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |8.1.2|2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8| |8.2|Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8| |**9**|**Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11**| |**10**|**Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 13**| |**11**|**Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13**| |**12**|**Legal information. . . . . . . . . . . . . . . . . . . . . . . 14**| |12.1|Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14| |12.2|Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14| |12.3|Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14| |12.4|Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15| |**13**|**Contact information. . . . . . . . . . . . . . . . . . . . . 15**| |**14**|**Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16**| Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. **© NXP B.V. 2010.** **All rights reserved.** For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com **Date of release: 8 July 2010 Document identifier: BLF573_BLF573S**
Updated at April 10, 2026
NXP Semiconductors is a global leader in secure connectivity solutions, driving innovation across the automotive, industrial, IoT, mobile, and communications infrastructure markets. By developing advanced, purpose-built technologies, NXP enables devices to sense, think, connect, and act intelligently, delivering rigorously tested components that make the connected world safer and more efficient. Within the semiconductor space, NXP is highly regarded for its extensive range of high-performance integrated circuits and discrete devices. The brand's portfolio excels in drivers and interfaces, featuring a comprehensive selection of I/O expanders designed to streamline complex system architectures. For demanding high-frequency and wireless applications, NXP provides industry-leading RF FETs and RF/PIN diodes engineered to deliver exceptional signal integrity, efficiency, and reliability. The NXP product lineup further extends to essential discrete components, including versatile bipolar transistors, JFETs, and small signal diodes optimized for precision switching and amplification. Additionally, the portfolio supports advanced automation and smart applications with precision IC sensors, such as MEMS accelerometers, alongside specialized power management solutions like AC/DC LED driver ICs and single MOSFETs for cutting-edge electronics design.
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