BFU580QX

Bipolar - RF Transistor, NPN, 12 V, 10.5 GHz, 1 W, 30 mA, SOT-89

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Manufacturer: NXP
Product type: Bipolar RF Transistors
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:10.5GHz; Power Dissipation Pd:1W; DC Collector Current:30mA; DC Current Gain hFE:95hFE; RF T
MSL: MSL 1 - Unlimited
SVHC: No SVHC (27-Jun-2024)
No. of Pins: 3Pins
Product Range: BFU580Q
Qualification: AEC-Q101
Power Dissipation: 1W
Transistor Mounting: Surface Mount
Transistor Polarity: NPN
Transition Frequency: 10.5GHz
Transistor Case Style: SOT-89
DC Current Gain hFE Min: 95hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 30mA
Collector Emitter Voltage Max: 12V

Delivery and price
Units per pack	500
Price	0.433 €
Current stock	200+
Lead time	7 days

Datasheet

Updated at March 18, 2026