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BFP843FH6327XTSA1
Bipolar - RF Transistor, NPN, 2.6 V, 125 mW, 55 mA, TSFP
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- Manufacturer: INFINEON
- Product type: Bipolar RF Transistors
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.6V; Transition Frequency ft:-; Power Dissipation Pd:125mW; DC Collector Current:55mA; DC Current Gain hFE:150hFE; RF Tra
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 125mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: -
- Transistor Case Style: TSFP
- DC Current Gain hFE Min: 150hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 55mA
- Collector Emitter Voltage Max: 2.6V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.202 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## BFP843F Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor ## Data Sheet Revision 1.0, 2013-06-19 RF & Protection Devices ~~eee~~ ## **Edition 2013-06-19** **Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved.** ## **Legal Disclaimer** The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. ## **Information** For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( **www.infineon.com** ). ## **Warnings** Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. **BFP843F** **==> picture [131 x 63] intentionally omitted <==** ## **BFP843F, Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor** **Revision History: 2013-06-19, Revision 1.0** **Page Subjects (major changes since last revision)** ## **Trademarks of Infineon Technologies AG** AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. ## **Other Trademarks** Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Data Sheet 3 Revision 1.0, 2013-06-19 **BFP843F** **==> picture [131 x 63] intentionally omitted <==** **Table of Contents** ## **Table of Contents** ||**Table of Contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4| |---|---| ||**List of Figures**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| ||**List of Tables**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**1**|**Product Brief**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**2**|**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8| |**3**|**Maximum Ratings**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9| |**4**|**Thermal Characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10| |**5**|**Electrical Characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |5.1|DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |5.2|General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |5.3|Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |**6**|**Characteristic DC Diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15| |**7**|**Characteristic AC Diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18| |**8**|**Simulation Data**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24| |**9**|**Package Information TSFP-4-1**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25| Data Sheet Revision 1.0, 2013-06-19 4 **BFP843F** **==> picture [131 x 63] intentionally omitted <==** ## **List of Figures** ## **List of Figures** |Figure|4-1|Total Power Dissipation_P_tot=_f_(_T_s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10| |---|---|---| |Figure|5-1|BFP843F Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |Figure|6-1|Collector Current vs. Collector Emitter Voltage_I_C=_f_(_V_CE),_I_B= Parameter . . . . . . . . . . . . . . . . . 15| |Figure|6-2|DC Current Gain_h_FE=_f_(_I_C),_V_CE= 1.8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15| |Figure|6-3|Collector Current vs. Base Emitter Forward Voltage_I_C=_f_(_V_BE),_V_CE= 1.8 V . . . . . . . . . . . . . . . . 16| |Figure|6-4|Base Current vs. Base Emitter Forward Voltage_I_B=_f_(_V_BE),_V_CE= 1.8 V . . . . . . . . . . . . . . . . . . . 16| |Figure|6-5|Base Current vs. Base Emitter Reverse Voltage_I_B=_f_(_V_EB),_V_CE= 1.8 V . . . . . . . . . . . . . . . . . . . 17| |Figure|7-1|3rd Order Intercept Point at Output_OIP3_=_f_(_I_C),_Z_S=_Z_L= 50 Ω,_V_CE,_f_= Parameters . . . . . . . . 18| |Figure|7-2|3rd Order Intercept Point at Output_OIP3_[dBm] =_f_(_I_C,_V_CE),_Z_S=_Z_L= 50 Ω,_f_= 5.5 GHz . . . . . . 18| |Figure|7-3|Compression Point at Output_OP_1dB[dBm] =_f_(_I_C,_V_CE),_Z_S=_Z_L= 50 Ω,_f_= 5.5 GHz . . . . . . . . . . 19| |Figure|7-4|Gain_G_ma,_G_ms, I_S_21I² =_f_(_f_),_V_CE= 1.8 V,_I_C= 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19| |Figure|7-5|Maximum Power Gain_G_max=_f_(_I_C),_V_CE= 1.8 V,_f_= Parameter in GHz . . . . . . . . . . . . . . . . . . . . 20| |Figure|7-6|Maximum Power Gain_G_max=_f_(_V_CE),_I_C= 15 mA,_f_= Parameter in GHz . . . . . . . . . . . . . . . . . . . 20| |Figure|7-7|Input Reflection Coefficient_S_11=_f_(_f_),_V_CE= 1.8 V,_I_C= 8 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . 21| |Figure|7-8|Source Impedance for Minimum Noise Figure_Z_opt=_f_(_f_),_V_CE= 1.8 V,_I_C= 8 / 15 mA . . . . . . . . . 21| |Figure|7-9|Output Reflection Coefficient_S_22=_f_(_f_),_V_CE= 1.8 V,_I_C= 8 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . 22| |Figure|7-10|Noise Figure_NF_min=_f_(_f_),_V_CE= 1.8 V,_I_C= 8 / 15 mA,_Z_S=_Z_opt. . . . . . . . . . . . . . . . . . . . . . . . . . 22| |Figure|7-11|Noise Figure_NF_min=_f_(_I_C),_V_CE= 1.8 V,_Z_S=_Z_opt,_f_= Parameter in GHz . . . . . . . . . . . . . . . . . . . 23| |Figure|7-12|Noise Figure_NF_50=_f_(_I_C),_V_CE= 1.8 V,_Z_S= 50 Ω,_f_= Parameter in GHz. . . . . . . . . . . . . . . . . . . 23| |Figure|9-1|Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25| |Figure|9-2|Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25| |Figure|9-3|Marking Description (Marking BFP843F: T2s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25| |Figure|9-4|Tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25| Data Sheet Revision 1.0, 2013-06-19 5 **BFP843F** **==> picture [131 x 63] intentionally omitted <==** ## **List of Tables** ## **List of Tables** |Table|3-1|Maximum Ratings at_T_A= 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9| |---|---|---| |Table|4-1|Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10| |Table|5-1|DC Characteristics at_T_A= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |Table|5-2|General AC Characteristics at_T_A= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |Table|5-3|AC Characteristics,_V_CE= 1.8 V,_f_= 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |Table|5-4|AC Characteristics,_V_CE= 1.8 V,_f_= 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |Table|5-5|AC Characteristics,_V_CE= 1.8 V,_f_= 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13| |Table|5-6|AC Characteristics,_V_CE= 1.8 V,_f_= 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13| |Table|5-7|AC Characteristics,_V_CE= 1.8 V,_f_= 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13| |Table|5-8|AC Characteristics,_V_CE= 1.8 V,_f_= 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14| |Table|5-9|AC Characteristics,_V_CE= 1.8 V,_f_= 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14| |Table|5-10|AC Characteristics,_V_CE= 1.8 V,_f_= 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14| Data Sheet 6 Revision 1.0, 2013-06-19 **BFP843F** **==> picture [131 x 63] intentionally omitted <==** **Product Brief** ## **1 Product Brief** The BFP843F is a very low noise broadband NPN bipolar RF transistor. Its integrated feedback provides a broadband pre-match to 50 Ω at input and output and improves the stability against parasitic oscillations. These measures simplify the design of arbitrary LNA application circuits. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to _V_ CEO = 2.25 V and currents up to _I_ C = 55 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge (ESD) and against high levels of RF input power. The device is housed in an easy to use plastic thin flat package with visible leads. Data Sheet Revision 1.0, 2013-06-19 7 **BFP843F** ## **Features** ## **2 Features** - Low noise broadband NPN RF transistor based on Infineon´s reliable, high volume SiGe:C bipolar technology - High maximum RF input power and ESD robustness 20 dBm maximum RF input power, 1.5 KV HBM ESD hardness - Unique combination of high RF performance, robustness and ease of application circuit design - Low noise figure: _NF_ min = 0.95 dB at 2.4 GHz and 1.1 dB at 5.5 GHz, 1.8 V, 8 mA - High gain | _S_ 21|[2] = 21.5 dB at 2.4 GHz and 16.5 dB at 5.5 GHz, 1.8 V, 15 mA - _OIP_ 3 = 22.5 dBm at 2.4 GHz and 20 dBm at 5.5 GHz, 1.8 V, 15 mA - Ideal for low voltage applications e.g. _V_ CC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor) - Low power consumption, ideal for mobile applications - Thin small flat Pb-free (RoHS compliant) and halogen-free package with visible leads - Qualification report according to AEC-Q101 available ## **Applications** As Low Noise Amplifier (LNA) in - Wireless Communications: WLAN IEEE802.11b,g,n,a,ac single- and dual band applications, broadband LTE or WiMAX LNA - Satellite navigation systems (e.g. GPS, GLONASS, COMPASS...) and satellite C-band LNB (1st and 2nd stage LNA) - Broadband amplifiers: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz - ISM bands up to 10 GHz - Dedicated short range communication (DSRC) systems: WLAN IEEE802.11p ## _**Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions**_ |**Product Name**|**Package**|**Pin Configuration**|**Pin Configuration**|**Pin Configuration**|**Pin Configuration**|**Marking**| |---|---|---|---|---|---|---| |BFP843F|TSFP-4-1|1 = B|2 = E|3 = C|4 = E|T2s| Data Sheet 8 Revision 1.0, 2013-06-19 **BFP843F** **==> picture [131 x 63] intentionally omitted <==** ## **Maximum Ratings** ## **3 Maximum Ratings** **Table 3-1 Maximum Ratings at** _**T**_ **A = 25 °C (unless otherwise specified)** |**Parameter**|**Symbol**|**Values**|**Values**|**Unit**|**Note / Test Condition**| |---|---|---|---|---|---| |||**Min.**|**Max.**||| |Collector emitter voltage|_V_CEO|–|2.25<br>2.0|V|_T_A= 25 °C<br>_T_A= -55 °C<br>Open base| |Collector emitter voltage1)|_V_CES|–|2.25<br>2.0|V|_T_A= 25 °C<br>_T_A= -55 °C<br>E-B short circuited| |Collector base voltage2)|_V_CBO|–|2.9<br>2.6|V|_T_A=25 °C<br>_T_A= -55 °C<br>Open emitter| |Base current|_I_B|-5|5|mA|| |Collector current|_I_C|–|55|mA|| |RF input power|_P_RFin|–|20|dBm|| |ESD stress pulse|_V_ESD|-1.5|1.5|kV|HBM, all pins, acc. to<br>JESD22-A114| |Total power dissipation3)|_P_tot|–|125|mW|_T_S≤101 °C| |Junction temperature|_T_J|–|150|°C|| |Storage temperature|_T_Stg|-55|150|°C|| 1) _V_ CES is identical to _V_ CEO due to design - 2) _V_ CBO is similar to _V_ CEO due to design 3) _T_ S is the soldering point temperature _. T_ S is measured on the emitter lead at the soldering point of the pcb. _**Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.**_ Data Sheet 9 Revision 1.0, 2013-06-19 **BFP843F** **==> picture [131 x 63] intentionally omitted <==** ## **Thermal Characteristics** ## **4 Thermal Characteristics** ## **Table 4-1 Thermal Resistance** |**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note / Test Condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Junction - soldering point1)|_R_thJS|–|395|–|K/W|–| 1) For the definition of _R_ thJS please refer to Application Note AN077 (Thermal Resistance Calculation). **==> picture [356 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 130<br>120<br>110<br>100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 25 50 75 100 125 150<br>T [°C]<br>S<br> [mW]<br>tot<br>P<br>**----- End of picture text -----**<br> **Figure 4-1 Total Power Dissipation** _**P**_ **tot =** _**f**_ **(** _**T**_ **s)** Data Sheet 10 Revision 1.0, 2013-06-19 **BFP843F** **==> picture [131 x 63] intentionally omitted <==** ## **Electrical Characteristics** ## **5 Electrical Characteristics** ## **5.1 DC Characteristics** **Table 5-1 DC Characteristics at** _**T**_ **A = 25 °C** |**Table 5-1**<br>**DC Characteristics at****_T_A**|**= 25 °C**|||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**|||**Unit**|**Note / Test Condition**| |||**Min.**|**Typ.**|**Max.**||| |Collector emitter breakdown voltage|_V_(BR)CEO|2.25|2.6||V|_I_C= 1 mA,_I_B= 0<br>Open base| |Collector emitter leakage current|_I_CES|–|–|400|nA|_V_CE= 1.5 V,_V_BE= 0<br>E-B short circuited| |Collector base leakage current|_I_CBO|–|–|400|nA|_V_CB= 1.5 V,_I_E= 0<br>Open emitter| |Emitter base leakage current|_I_EBO|–|–|10|μA|_V_EB= 0.5 V,_I_C= 0<br>Open collector| |DC current gain|_h_FE|150|260|450||_V_CE= 1.8 V,_I_C= 15 mA<br>Pulse measured| ## **5.2 General AC Characteristics** **Table 5-2 General AC Characteristics at** _**T**_ **A = 25 °C** |**Table 5-2**<br>**General AC Characteristi**|**cs at****_T_A =**|**25 °C**|**25 °C**|**25 °C**||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**|||**Unit**|**Note / Test Condition**| |||**Min.**|**Typ.**|**Max.**||| |Collector base capacitance1)|_C_CB|–|5.23<br>0.06|–|pF|_f_= 1 MHz<br>_f_= 1 GHz<br>_V_CB= 1.8 V,_V_BE= 0<br>Emitter grounded| |Collector emitter capacitance|_C_CE|–|0.46|–|pF|_f_= 1 MHz<br>_V_CE= 1.8 V,_V_BE= 0<br>Base grounded| |Emitter base capacitance|_C_EB|–|0.70|–|pF|_f_= 1 MHz<br>_V_EB= 0.4 V,_V_CB= 0<br>Collector grounded| 1) Including integrated feedback capacitance Data Sheet 11 Revision 1.0, 2013-06-19 **BFP843F** **==> picture [131 x 63] intentionally omitted <==** ## **Electrical Characteristics** ## **5.3 Frequency Dependent AC Characteristics** Measurement setup is a test fixture with Bias T’s in a 50 Ω system, _T_ A = 25 °C **==> picture [462 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> VC<br>Top View<br>Bias-T<br>OUT<br>E C<br>VB<br>B E<br>Bias-T (Pin 1)<br>IN<br>**----- End of picture text -----**<br> **Figure 5-1 BFP843F Testing Circuit** **Table 5-3 AC Characteristics,** _**V**_ **CE = 1.8 V,** _**f**_ **= 450 MHz** |**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note / Test Condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |**Power Gain**<br>Maximum power gain<br>Transducer gain|_G_ma<br>|_S_21|2|–<br>–|25<br>24.5|–<br>–|dB|_I_C= 15 mA<br>_I_C = 15 mA| |**Minimum Noise Figure**<br>Minimum noise figure<br>Associated gain|_NF_min<br>_G_ass|–<br>–|0.8<br>22.5|–<br>–|dB|_I_C= 8 mA<br>_I_C = 8 mA| |**Linearity**<br>1 dB compression point at output<br>3rd order intercept point at output|_OP_1dB<br>_OIP3_|–<br>–|7<br>24.5|–<br>–|dBm|_Z_S=_Z_L= 50 Ω<br>_I_C= 15 mA<br>_I_C = 15 mA| ## **Table 5-4 AC Characteristics,** _**V**_ **CE = 1.8 V,** _**f**_ **= 900 MHz** |**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note / Test Condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |**Power Gain**<br>Maximum power gain<br>Transducer gain|_G_ma<br>|_S_21|2|–<br>–|24.5<br>24|–<br>–|dB|_I_C= 15 mA<br>_I_C = 15 mA| |**Minimum Noise Figure**<br>Minimum noise figure<br>Associated gain|_NF_min<br>_G_ass|–<br>–|0.8<br>22|–<br>–|dB|_I_C= 8 mA<br>_I_C = 8 mA| |**Linearity**<br>1 dB compression point at output<br>3rd order intercept point at output|_OP_1dB<br>_OIP3_|–<br>–|8<br>24|–<br>–|dBm|_Z_S=_Z_L= 50 Ω<br>_I_C= 15 mA<br>_I_C = 15 mA| Data Sheet 12 Revision 1.0, 2013-06-19 **BFP843F** **==> picture [131 x 63] intentionally omitted <==** **Electrical Characteristics** ## **Table 5-5 AC Characteristics,** _**V**_ **CE = 1.8 V,** _**f**_ **= 1.5 GHz** |**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note / Test Condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |**Power Gain**<br>Maximum power gain<br>Transducer gain|_G_ma<br>|_S_21|2|–<br>–|24<br>23|–<br>–|dB|_I_C= 15 mA<br>_I_C = 15 mA| |**Minimum Noise Figure**<br>Minimum noise figure<br>Associated gain|_NF_min<br>_G_ass|–<br>–|0.85<br>21|–<br>–|dB|_I_C= 8 mA<br>_I_C = 8 mA| |**Linearity**<br>1 dB compression point at output<br>3rd order intercept point at output|_OP_1dB<br>_OIP3_|–<br>–|7<br>23|–<br>–|dBm|_Z_S=_Z_L= 50 Ω<br>_I_C= 15 mA<br>_I_C = 15 mA| ## **Table 5-6 AC Characteristics,** _**V**_ **CE = 1.8 V,** _**f**_ **= 1.9 GHz** |**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note / Test Condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |**Power Gain**<br>Maximum power gain<br>Transducer gain|_G_ma<br>|_S_21|2|–<br>–|23.5<br>22.5|–<br>–|dB|_I_C= 15 mA<br>_I_C = 15 mA| |**Minimum Noise Figure**<br>Minimum noise figure<br>Associated gain|_NF_min<br>_G_ass|–<br>–|0.9<br>20.5|–<br>–|dB|_I_C= 8 mA<br>_I_C = 8 mA| |**Linearity**<br>1 dB compression point at output<br>3rd order intercept point at output|_OP_1dB<br>_OIP3_|–<br>–|7.5<br>23.5|–<br>–|dBm|_Z_S=_Z_L= 50 Ω<br>_I_C= 15 mA<br>_I_C = 15 mA| ## **Table 5-7 AC Characteristics,** _**V**_ **CE = 1.8 V,** _**f**_ **= 2.4 GHz** |**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note / Test Condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |**Power Gain**<br>Maximum power gain<br>Transducer gain|_G_ma<br>|_S_21|2|–<br>–|22.5<br>21.5|–<br>–|dB|_I_C= 15 mA<br>_I_C = 15 mA| |**Minimum Noise Figure**<br>Minimum noise figure<br>Associated gain|_NF_min<br>_G_ass|–<br>–|0.95<br>20|–<br>–|dB|_I_C= 8 mA<br>_I_C = 8 mA| |**Linearity**<br>1 dB compression point at output<br>3rd order intercept point at output|_OP_1dB<br>_OIP3_|–<br>–|6.5<br>22.5|–<br>–|dBm|_Z_S=_Z_L= 50 Ω<br>_I_C= 15 mA<br>_I_C = 15 mA| Data Sheet 13 Revision 1.0, 2013-06-19 **BFP843F** **==> picture [131 x 63] intentionally omitted <==** **Electrical Characteristics** **Table 5-8 AC Characteristics,** _**V**_ **CE = 1.8 V,** _**f**_ **= 3.5 GHz** |**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note / Test Condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |**Power Gain**<br>Maximum power gain<br>Transducer gain|_G_ma<br>|_S_21|2|–<br>–|21<br>19.5|–<br>–|dB|_I_C= 15 mA<br>_I_C = 15 mA| |**Minimum Noise Figure**<br>Minimum noise figure<br>Associated gain|_NF_min<br>_G_ass|–<br>–|1.0<br>18|–<br>–|dB|_I_C= 8 mA<br>_I_C = 8 mA| |**Linearity**<br>1 dB compression point at output<br>3rd order intercept point at output|_OP_1dB<br>_OIP3_|–<br>–|6<br>22|–<br>–|dBm|_Z_S=_Z_L= 50 Ω<br>_I_C= 15 mA<br>_I_C = 15 mA| ## **Table 5-9 AC Characteristics,** _**V**_ **CE = 1.8 V,** _**f**_ **= 5.5 GHz** |**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note / Test Condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |**Power Gain**<br>Maximum power gain<br>Transducer gain|_G_ma<br>|_S_21|2|–<br>–|18<br>16.5|–<br>–|dB|_I_C= 15 mA<br>_I_C = 15 mA| |**Minimum Noise Figure**<br>Minimum noise figure<br>Associated gain|_NF_min<br>_G_ass|–<br>–|1.1<br>15.5|–<br>–|dB|_I_C= 8 mA<br>_I_C = 8 mA| |**Linearity**<br>1 dB compression point at output<br>3rd order intercept point at output|_OP_1dB<br>_OIP3_|–<br>–|4.5<br>19.5|–<br>–|dBm|_Z_S=_Z_L= 50 Ω<br>_I_C= 15 mA<br>_I_C = 15 mA| ## **Table 5-10 AC Characteristics,** _**V**_ **CE = 1.8 V,** _**f**_ **= 10 GHz** |**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note / Test Condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |**Power Gain**<br>Maximum power gain<br>Transducer gain|_G_ma<br>|_S_21|2|–<br>–|13.5<br>10|–<br>–|dB|_I_C= 15 mA<br>_I_C = 15 mA| |**Minimum Noise Figure**<br>Minimum noise figure<br>Associated gain|_NF_min<br>_G_ass|–<br>–|1.7<br>10|–<br>–|dB|_I_C= 8 mA<br>_I_C = 8 mA| |**Linearity**<br>1 dB compression point at output<br>3rd order intercept point at output|_OP_1dB<br>_OIP3_|–<br>–|0.5<br>16.5|–<br>–|dBm|_Z_S=_Z_L= 50 Ω<br>_I_C= 15 mA<br>_I_C = 15 mA| > _Note: OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50_ Ω _from 0.2 MHz to 12 GHz._ Data Sheet 14 Revision 1.0, 2013-06-19 **BFP843F** **==> picture [131 x 63] intentionally omitted <==** ## **Characteristic DC Diagrams** ## **6** ## **Characteristic DC Diagrams** **==> picture [356 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 22<br>20<br>80µA<br>18 70µA<br>16 60µA<br>14 50µA<br>12<br>40µA<br>10<br>30µA<br>8<br>20µA<br>6<br>4 10µA<br>2<br>0<br>0 0.5 1 1.5 2 2.5<br>V [V]<br>CE<br> [mA]<br>IC<br>**----- End of picture text -----**<br> **Figure 6-1 Collector Current vs. Collector Emitter Voltage** _**I**_ **C =** _**f**_ **(** _**V**_ **CE),** _**I**_ **B = Parameter** **==> picture [356 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>10<br>2<br>10<br>−2 −1 0 1 2<br>10 10 10 10 10<br>I [mA]<br>c<br>FE<br>h<br>**----- End of picture text -----**<br> **Figure 6-2 DC Current Gain** _**h**_ **FE =** _**f**_ **(** _**I**_ **C),** _**V**_ **CE = 1.8 V** Data Sheet 15 Revision 1.0, 2013-06-19 **BFP843F** **==> picture [131 x 63] intentionally omitted <==** ## **Characteristic DC Diagrams** **==> picture [356 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>10<br>1<br>10<br>0<br>10<br>−1<br>10<br>−2<br>10<br>−3<br>10<br>−4<br>10<br>−5<br>10<br>0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9<br>VBE [V]<br> [mA]<br>IC<br>**----- End of picture text -----**<br> **Figure 6-3 Collector Current vs. Base Emitter Forward Voltage** _**I**_ **C =** _**f**_ **(** _**V**_ **BE),** _**V**_ **CE = 1.8 V** **==> picture [356 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 0<br>10<br>−1<br>10<br>−2<br>10<br>−3<br>10<br>−4<br>10<br>−5<br>10<br>−6<br>10<br>−7<br>10<br>0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9<br>VBE [V]<br> [mA]<br>IB<br>**----- End of picture text -----**<br> **Figure 6-4 Base Current vs. Base Emitter Forward Voltage** _**I**_ **B =** _**f**_ **(** _**V**_ **BE),** _**V**_ **CE = 1.8 V** Data Sheet 16 Revision 1.0, 2013-06-19 **BFP843F** **==> picture [131 x 63] intentionally omitted <==** ## **Characteristic DC Diagrams** **==> picture [356 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> −6<br>10<br>−7<br>10<br>−8<br>10<br>−9<br>10<br>−10<br>10<br>−11<br>10<br>0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7<br>VEB [V]<br> [A]<br>IB<br>**----- End of picture text -----**<br> **Figure 6-5 Base Current vs. Base Emitter Reverse Voltage** _**I**_ **B =** _**f**_ **(** _**V**_ **EB),** _**V**_ **CE = 1.8 V** Data Sheet 17 Revision 1.0, 2013-06-19 **BFP843F** **==> picture [131 x 63] intentionally omitted <==** ## **Characteristic AC Diagrams** ## **7** ## **Characteristic AC Diagrams** **==> picture [357 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 24<br>22<br>20<br>18<br>16<br>14<br>12<br>10<br>1.5V, 2400MHz<br>8 1.8V, 2400MHz<br>6 1.5V, 5500MHz<br>1.8V, 5500MHz<br>4<br>2<br>0<br>0 5 10 15 20 25 30 35<br>I [mA]<br>C<br> [dBm]<br>3<br>OIP<br>**----- End of picture text -----**<br> **Figure 7-1 3rd Order Intercept Point at Output** _**OIP3**_ **=** _**f**_ **(** _**I**_ **C),** _**Z**_ **S =** _**Z**_ **L = 50** Ω, _**V**_ **CE,** _**f**_ **= Parameters** **==> picture [356 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 35<br>30<br>25<br>20<br>15<br>10<br>19<br>17 1617<br>5 12 14 13 12 14 13 12<br>1 1.2 1.4 1.6 1.8 2<br>V [V]<br>CE<br>19 18 1820<br>16141513 1615 15<br>20<br>17 18<br>20<br>18<br>19<br>20<br>19<br>13 18<br>17<br>21<br>8 91011<br>12<br>20<br>19<br>1415 1617<br>13 18<br>19<br>91011<br>12<br>7<br>17<br>4<br>5 6<br>14<br>15<br>21<br>20<br>19<br>16<br>20<br>17<br>16<br> [mA] 18<br>IC<br>**----- End of picture text -----**<br> **Figure 7-2 3rd Order Intercept Point at Output** _**OIP3**_ **[dBm] =** _**f**_ **(** _**I**_ **C,** _**V**_ **CE),** _**Z**_ **S =** _**Z**_ **L = 50** Ω, _**f**_ **= 5.5 GHz** Data Sheet 18 Revision 1.0, 2013-06-19 **BFP843F** **==> picture [131 x 63] intentionally omitted <==** ## **Characteristic AC Diagrams** **==> picture [497 x 603] intentionally omitted <==** **----- Start of picture text -----**<br> 35<br>30<br>25<br>20<br>15<br>10<br>−3<br>−5<br>5<br>1 1.2 1.4 1.6 1.8 2<br>V [V]<br>CE<br>Figure 7-3 Compression Point at Output OP 1dB [dBm] = f ( I C, V CE), Z S = Z L = 50 Ω, f = 5.5 GHz<br>26<br>24<br>22<br>G<br>ma<br>20<br>18<br>16 |S21| [2]<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 1 2 3 4 5 6 7 8 9 10 11 12<br>f [GHz]<br>4<br>3<br>2<br>1<br>0<br>0<br>−1 −1<br>−2 −2 −2<br>−3 −3<br>−4 −5−4 −5−4<br>6<br>5<br>4<br>2<br>1<br>−1<br>0<br>6<br>2 3<br>1<br>3<br>5<br>4 5<br>−6 −4−3−2 1 2 6<br>7<br>−1 0 1 2<br>3<br>3<br>6<br>4<br>5<br>3<br>4<br>7<br> [mA]<br>IC<br>G [dB]<br>**----- End of picture text -----**<br> **Figure 7-4 Gain** _**G**_ **ma,** _**G**_ **ms, I** _**S**_ **21I² =** _**f**_ **(** _**f**_ **),** _**V**_ **CE = 1.8 V,** _**I**_ **C = 15 mA** Data Sheet 19 Revision 1.0, 2013-06-19 **BFP843F** **==> picture [131 x 63] intentionally omitted <==** ## **Characteristic AC Diagrams** **==> picture [356 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 28<br>26 0.45GHz<br> 0.90GHz<br>24 1.50GHz<br> 1.90GHz<br>22 2.40GHz<br>20<br> 3.50GHz<br>18<br>16 5.50GHz<br>14<br>12<br> 10.00GHz<br>10 12.00GHz<br>8<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25 30 35 40 45 50 55 60 65 70<br>I [mA]<br>C<br> [dB]<br>max<br>G<br>**----- End of picture text -----**<br> **Figure 7-5 Maximum Power Gain** _**G**_ **max =** _**f**_ **(** _**I**_ **C),** _**V**_ **CE = 1.8 V,** _**f**_ **= Parameter in GHz** **==> picture [356 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 28<br>26<br> 0.45GHz<br> 0.90GHz<br>24 1.50GHz<br> 1.90GHz<br> 2.40GHz<br>22<br> 3.50GHz<br>20<br>18 5.50GHz<br>16<br>14<br> 10.00GHz<br> 12.00GHz<br>12<br>10<br>0 0.5 1 1.5 2 2.5<br>V [V]<br>CE<br> [dB]<br>max<br>G<br>**----- End of picture text -----**<br> **Figure 7-6 Maximum Power Gain** _**G**_ **max =** _**f**_ **(** _**V**_ **CE),** _**I**_ **C = 15 mA,** _**f**_ **= Parameter in GHz** Data Sheet 20 Revision 1.0, 2013-06-19 **BFP843F** **==> picture [131 x 63] intentionally omitted <==** **Characteristic AC Diagrams** **==> picture [404 x 303] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>1.5<br>0.5 2<br>0.4<br>12.0 12.0 3<br>0.3 11.0 11.0<br>10.0 4<br>0.2 10.0 9.0 5<br>9.0 8.0 0.03 to 12 GHz<br>0.1 8.0 7.0 10<br>6.0<br>0 0.1 0.2 0.3 0.47.0 0.5 5.04.0 1 1.5 2 3 4 5<br>3.0 1.0<br>6.0 2.0<br>5.0<br>−0.1 1.0 −10<br>4.0<br>3.0 2.0 0.03<br>0.03<br>−0.2 −5<br>−4<br>−0.3<br>−3<br>−0.4<br>−0.5 −2<br>−1.5<br>8.0mA<br>−1 15mA<br>**----- End of picture text -----**<br> **Figure 7-7 Input Reflection Coefficient** _**S**_ **11 =** _**f**_ **(** _**f**_ **),** _**V**_ **CE = 1.8 V,** _**I**_ **C = 8 / 15 mA** **==> picture [404 x 304] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>1.5<br>0.5 2<br>0.4<br>3<br>0.3<br>4<br>0.2 5<br>0.45 to 10 GHz<br>0.1 10<br>3.5 2.4<br>1.9<br>0 0.1 0.2 0.3 0.4 0.5 5.5 1 0.91.50.45 2 3 4 5<br>0.45<br>5.5<br>−0.1 −10<br>10.0 10.0<br>−0.2 −5<br>−4<br>−0.3<br>−3<br>−0.4<br>−0.5 −2<br>−1.5<br> 8mA<br>−1 15mA<br>**----- End of picture text -----**<br> **Figure 7-8 Source Impedance for Minimum Noise Figure** _**Z**_ **opt =** _**f**_ **(** _**f**_ **),** _**V**_ **CE = 1.8 V,** _**I**_ **C = 8 / 15 mA** Data Sheet 21 Revision 1.0, 2013-06-19 **BFP843F** **==> picture [131 x 63] intentionally omitted <==** **Characteristic AC Diagrams** **==> picture [404 x 303] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>1.5<br>0.5 2<br>0.4<br>12.0 3<br>0.3 12.0 11.0<br>11.0<br>4<br>10.0 10.0<br>0.2 5<br>9.0 9.0 0.03 to 12 GHz<br>0.1 10<br>8.0<br>8.0<br>0 0.1 0.2 0.3 7.00.4 0.5 7.06.0 1 1.0 1.5 2 3 4 5<br>6.0 5.04.0 3.0 2.0<br>−0.1 5.0 1.0 −10<br>0.03<br>4.0 3.0 2.0 0.03<br>−0.2 −5<br>−4<br>−0.3<br>−3<br>−0.4<br>−0.5 −2<br>−1.5<br>8.0mA<br>−1 15mA<br>**----- End of picture text -----**<br> **Figure 7-9 Output Reflection Coefficient** _**S**_ **22 =** _**f**_ **(** _**f**_ **),** _**V**_ **CE = 1.8 V,** _**I**_ **C = 8 / 15 mA** **==> picture [356 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>1.8<br>1.6<br>1.4<br>1.2<br>1<br>0.8<br>I = 15mA<br>C<br>0.6<br>I = 8mA<br>C<br>0.4<br>0.2<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>f [GHz]<br> [dB]<br>min<br>NF<br>**----- End of picture text -----**<br> **Figure 7-10 Noise Figure** _**NF**_ **min =** _**f**_ **(** _**f**_ **),** _**V**_ **CE = 1.8 V,** _**I**_ **C = 8 / 15 mA,** _**Z**_ **S =** _**Z**_ **opt** Data Sheet 22 Revision 1.0, 2013-06-19 **BFP843F** **==> picture [131 x 63] intentionally omitted <==** ## **Characteristic AC Diagrams** **==> picture [356 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>f = 10GHz<br>2.8<br>f = 5.5GHz<br>2.6<br>2.4 f = 3.5GHz<br>2.2<br>f = 2.4GHz<br>2<br>f = 0.9GHz<br>1.8<br>1.6<br>1.4<br>1.2<br>1<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 5 10 15 20 25<br>I [mA]<br>C<br> [dB]<br>min<br>NF<br>**----- End of picture text -----**<br> **Figure 7-11 Noise Figure** _**NF**_ **min =** _**f**_ **(** _**I**_ **C),** _**V**_ **CE = 1.8 V,** _**Z**_ **S =** _**Z**_ **opt,** _**f**_ **= Parameter in GHz** **==> picture [356 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>f = 10GHz<br>3.5 f = 5.5GHz<br>f = 3.5GHz<br>3<br>f = 2.4GHz<br>2.5<br>f = 0.9GHz<br>2<br>1.5<br>1<br>0.5<br>0<br>0 5 10 15 20 25<br>I [mA]<br>C<br> [dB]<br>50<br>NF<br>**----- End of picture text -----**<br> **Figure 7-12 Noise Figure** _**NF**_ **50 =** _**f**_ **(** _**I**_ **C),** _**V**_ **CE = 1.8 V,** _**Z**_ **S = 50 Ω,** _**f**_ **= Parameter in GHz** _Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. T_ A = 25 °C. Data Sheet 23 Revision 1.0, 2013-06-19 **BFP843F** **==> picture [131 x 63] intentionally omitted <==** **Simulation Data** ## **8 Simulation Data** For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website. Please consult our website and download the latest versions before actually starting your design. You find the BFP843F SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 12 GHz using typical devices. The BFP843F SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted. Data Sheet 24 Revision 1.0, 2013-06-19 **BFP843F** **Package Information TSFP-4-1** ## **9 Package Information TSFP-4-1** **==> picture [189 x 135] intentionally omitted <==** **----- Start of picture text -----**<br> 1.4 ±0.05<br>0.2 ±0.05 0.55 ±0.04<br>4 3<br>:<br>1 2<br>0.2 ±0.05<br>a i<br>0.5 [±0.05] 0.15 ±0.05<br>|_|<br>0.5 [±0.05]<br>TSFP-4-1, -2-PO V04<br>±0.05<br>0.8<br>±0.05 ±0.05<br>1.2 0.2<br>10° MAX.<br>**----- End of picture text -----**<br> **Figure 9-1 Package Outline** **==> picture [98 x 120] intentionally omitted <==** **----- Start of picture text -----**<br> 0.35<br>|<br>|<br>0.5 0.5<br>o n 3<br>TSFP-4-1, -2-FP V04<br>0.45<br>0.9<br>**----- End of picture text -----**<br> **Figure 9-2 Package Footprint** **Figure 9-3 Marking Description (Marking BFP843F: T2s)** **==> picture [214 x 120] intentionally omitted <==** **----- Start of picture text -----**<br> 4 0.2<br>“(7 |<br>Ea<br>Pin 1 a 1.55 0.7<br>TSFP-4-1, -2-TP V05<br>1.4 8<br>**----- End of picture text -----**<br> **Figure 9-4 Tape dimensions** Data Sheet 25 Revision 1.0, 2013-06-19 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG
Updated at April 21, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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