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BFP740FESDH6327XTSA1
Bipolar - RF Transistor, NPN, 4.2 V, 47 GHz, 160 mW, 45 mA, TSFP
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Bipolar RF Transistors
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4.2V; Transition Frequency ft:47GHz; Power Dissipation Pd:160mW; DC Collector Curre; Available until stocks are exhausted
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (21-Jan-2025)
- No. of Pins: 4Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 160mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 47GHz
- Transistor Case Style: TSFP
- DC Current Gain hFE Min: 160hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 45mA
- Collector Emitter Voltage Max: 4.2V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 0.358 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## BFP740FESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
## Data Sheet
Revision 1.2, 2012-10-11
RF & Protection Devices ~~eee~~
## **Edition 2012-10-11**
**Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved.**
## **Legal Disclaimer**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
## **Information**
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( **www.infineon.com** ).
## **Warnings**
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
**BFP740FESD**
**==> picture [131 x 63] intentionally omitted <==**
## **BFP740FESD, Robust Low Noise Silicon Germanium Bipolar RF Transistor**
## **Revision History: 2012-10-11. Revision 1.2**
|**Page**|**Subjects (major changes since last revision)**|
|---|---|
||This data sheet replaces the revision from 2010-06-29.<br>The product itself has not been changed and the device characteristics remain unchanged.<br>Only the product description and information available in the data sheet has been expanded<br>and updated.|
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## **Trademarks of Infineon Technologies AG**
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
## **Other Trademarks**
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.
Last Trademarks Update 2011-11-11
Data Sheet
3
Revision 1.2, 2012-10-11
**BFP740FESD**
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**Table of Contents**
## **Table of Contents**
||**Table of Contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4|
|---|---|
||**List of Figures**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5|
||**List of Tables**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6|
|**1**|**Product Brief**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7|
|**2**|**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8|
|**3**|**Maximum Ratings**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
|**4**|**Thermal Characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10|
|**5**|**Electrical Characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
|5.1|DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
|5.2|General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
|5.3|Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
|5.4|Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17|
|5.5|Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20|
|**6**|**Simulation Data**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26|
|**7**|**Package Information TSFP-4-1**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27|
Data Sheet
Revision 1.2, 2012-10-11
4
**BFP740FESD**
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## **List of Figures**
## **List of Figures**
|Figure|4-1|Total Power Dissipation_P_tot=_f_(_T_s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10|
|---|---|---|
|Figure|5-1|BFP740FESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
|Figure|5-2|Collector Current vs. Collector Emitter Voltage_I_C=_f_(VCE),_I_B= Parameter in µA. . . . . . . . . . . . . 17|
|Figure|5-3|DC Current Gain_h_FE=_f_(_I_C),_V_CE= 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17|
|Figure|5-4|Collector Current vs. Base Emitter Voltage_I_C=_f_(_V_BE),_V_CE= 2 V. . . . . . . . . . . . . . . . . . . . . . . . . 18|
|Figure|5-5|Base Current vs. Base Emitter Forward Voltage_I_B=_f_(_V_BE),_V_CE= 2 V . . . . . . . . . . . . . . . . . . . . 18|
|Figure|5-6|Base Current vs. Base Emitter Reverse Voltage_I_B=_f_(_V_EB),_V_CE= 2 V . . . . . . . . . . . . . . . . . . . . 19|
|Figure|5-7|Transition Frequency_f_T=_f_(_I_C),_f_= 1 GHz,_V_CE= Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 20|
|Figure|5-8|3rd Order Intercept Point_OIP_3=_f_(_I_C),_Z_S=_Z_L= 50 Ω,_V_CE,_f_= Parameters . . . . . . . . . . . . . . . . . 20|
|Figure|5-9|Collector Base Capacitance_C_CB_= f_(_V_CB),_f_= 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21|
|Figure|5-10|Gain_G_ma,_G_ms, I_S_21I² =_f_(_f_),_V_CE= 3 V,_I_C= 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21|
|Figure|5-11|Maximum Power Gain_G_max=_f_(_I_C),_V_CE= 3 V,_f_= Parameter in GHz. . . . . . . . . . . . . . . . . . . . . . 22|
|Figure|5-12|Maximum Power Gain_G_max=_f_(_V_CE),_I_C= 25 mA,_f_= Parameter in GHz . . . . . . . . . . . . . . . . . . . 22|
|Figure|5-13|Input Matching_S_11=_f_(_f_),_V_CE= 3 V,_I_C= 6 / 25 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23|
|Figure|5-14|Source Impedance for Minimum Noise Figure_Z_opt=_f_(_f_),_V_CE= 3 V,_I_C= 6 / 25 mA . . . . . . . . . . . 23|
|Figure|5-15|Output Matching_S_22=_f_(_f_),_V_CE= 3 V,_I_C= 6 / 25 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24|
|Figure|5-16|Noise Figure_NF_min=_f_(_f_),_V_CE= 3 V,_I_C= 6 / 25 mA,_Z_S=_Z_opt. . . . . . . . . . . . . . . . . . . . . . . . . . . 24|
|Figure|5-17|Noise Figure_NF_min=_f_(_I_C),_V_CE= 3 V,_Z_S=_Z_opt,_f_= Parameter in GHz. . . . . . . . . . . . . . . . . . . . . 25|
|Figure|5-18|Noise Figure_NF_50=_f_(_I_C),_V_CE= 3 V,_Z_S= 50 Ω,_f_= Parameter in GHz . . . . . . . . . . . . . . . . . . . . 25|
|Figure|7-1|Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27|
|Figure|7-2|Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27|
|Figure|7-3|Marking Description (Marking BFP740FESD: T7s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27|
|Figure|7-4|Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27|
Data Sheet
Revision 1.2, 2012-10-11
5
**BFP740FESD**
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**List of Tables**
## **List of Tables**
|Table|3-1|Maximum Ratings at_T_A= 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9|
|---|---|---|
|Table|4-1|Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10|
|Table|5-1|DC Characteristics at_T_A= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
|Table|5-2|General AC Characteristics at_T_A= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11|
|Table|5-3|AC Characteristics,_V_CE= 3 V,_f_= 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12|
|Table|5-4|AC Characteristics,_V_CE= 3 V,_f_= 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|Table|5-5|AC Characteristics,_V_CE= 3 V,_f_= 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13|
|Table|5-6|AC Characteristics,_V_CE= 3 V,_f_= 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14|
|Table|5-7|AC Characteristics,_V_CE= 3 V,_f_= 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14|
|Table|5-8|AC Characteristics,_V_CE= 3 V,_f_= 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15|
|Table|5-9|AC Characteristics,_V_CE= 3 V,_f_= 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15|
|Table|5-10|AC Characteristics,_V_CE= 3 V,_f_= 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16|
|Table|5-11|AC Characteristics,_V_CE= 3 V,_f_= 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16|
Data Sheet
6
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**BFP740FESD**
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**Product Brief**
## **1 Product Brief**
The BFP740FESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to _V_ CEO = 4.2 V and currents up to _I_ C = 45 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 47 GHz, hence the device offers high power gain at frequencies up to 12 GHz in amplifier applications. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge (ESD) and high levels of RF input power. The device is housed in a thin small flat plastic package with visible leads.
Data Sheet
Revision 1.2, 2012-10-11
7
**BFP740FESD**
**Features**
## **2 Features**
- Robust very low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology
- 2 kV ESD robustness (HBM) due to integrated protection circuits
- High maximum RF input power of 21 dBm
- 0.60 dB minimum noise figure typical at 2.4 GHz, 0.8 dB at 5.5 GHz, 6 mA
- 26 dB maximum gain _G_ ms typical at 2.4 GHz, 20.5 dB _G_ ma at 5.5 GHz, 25 mA
- 23.5 dBm _OIP_ 3 typical at 5.5 GHz, 25 mA
- Thin small flat Pb-free (RoHS compliant) and halogen-free package with visible leads
- Qualification report according to AEC-Q101 available
## **Applications**
As Low Noise Amplifier (LNA) in
- Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, Bluetooth
- Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
- Multimedia applications such as mobile/portable TV, CATV, FM Radio
- 3G/4G UMTS/LTE mobile phone applications
- ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier
## _**Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions**_
|**Product Name**|**Package**||**Pin Configuration**|**Pin Configuration**||**Marking**|
|---|---|---|---|---|---|---|
|BFP740FESD|TSFP-4-1|1 = B|2 = E|3 = C|4 = E|T7s|
Data Sheet
8
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**BFP740FESD**
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## **Maximum Ratings**
## **3 Maximum Ratings**
**Table 3-1 Maximum Ratings at** _**T**_ **A = 25 °C (unless otherwise specified)**
|**Parameter**|**Symbol**|**Values**|**Values**|**Unit**|**Note / Test Condition**|
|---|---|---|---|---|---|
|||**Min.**|**Max.**|||
|Collector emitter voltage|_V_CEO|–<br>–|4.2<br>3.7|V<br>V|Open base<br>_T_A= 25 °C<br>_T_A= -55 °C|
|Collector emitter voltage1)|_V_CBO|–<br>–|4.9<br>4.4|V<br>V|Open emitter<br>_T_A= 25 °C<br>_T_A= -55 °C|
|Collector emitter voltage2)|_V_CES|–<br>–|4.2<br>3.7|V<br>V|E-B short circuited<br>_T_A= 25 °C<br>_T_A= -55 °C|
|Base current3)|_I_B|-10|5|mA|–|
|Collector current|_I_C|–|45|mA|–|
|RF input power4)|_P_RFin|–|21|dBm|–|
|ESD stress pulse5)|_V_ESD|-2|2|kV|HBM, all pins, acc. to<br>JESD22-A114|
|Total power dissipation6)|_P_tot|–|160|mW|_T_S ≤100 °C|
|Junction temperature|_T_J|–|150|°C|–|
|Storage temperature|_T_Stg|-55|150|°C|–|
- 1) Low _V_ CBO due to integrated protection circuits
- 2) _V_ CES is identical to _V_ CEO due to integrated protection circuits.
3) Sustainable reverse bias current is high due to integrated protection circuits.
4) RF input power is high due to integrated protection circuits.
- 5) ESD robustness is high due to integrated protection circuits.
6) _T_ S is the soldering point temperature. _T_ S is measured on the emitter lead at the soldering point of the pcb.
_**Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.**_
Data Sheet
9
Revision 1.2, 2012-10-11
**BFP740FESD**
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## **Thermal Characteristics**
## **4 Thermal Characteristics**
## **Table 4-1 Thermal Resistance**
|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note / Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|Junction - soldering point1)|_R_thJS|–|315|–|K/W|–|
|1)For the definition of_R_thJsplease refer||to Application Note AN077 (Thermal Resistance Calculation)|||||
**==> picture [356 x 277] intentionally omitted <==**
**----- Start of picture text -----**<br>
180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 25 50 75 100 125 150<br>T [°C]<br>S<br>Ptot [mW]<br>**----- End of picture text -----**<br>
**Figure 4-1 Total Power Dissipation** _**P**_ **tot =** _**f**_ **(** _**T**_ **s)**
Data Sheet
10
Revision 1.2, 2012-10-11
**BFP740FESD**
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## **Electrical Characteristics**
## **5 Electrical Characteristics**
## **5.1 DC Characteristics**
**Table 5-1 DC Characteristics at** _**T**_ **A = 25 °C**
|**Table 5-1**<br>**DC Characteristics at****_T_A**|**= 25 °C**||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note / Test Condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Collector emitter breakdown voltage|_V_(BR)CEO|4.2|4.7|–|V|_I_C= 1 mA,_I_B= 0<br>Open base|
|Collector emitter leakage current|_I_CES|–|–|400|nA|_V_CE= 2 V,_V_BE= 0<br>E-B short circuited|
|Collector base leakage current|_I_CBO|–|–|400|nA|_V_CB= 2 V,_I_E= 0<br>Open emitter|
|Emitter base leakage current|_I_EBO|–|–|10|μA|_V_EB= 0.5 V,_I_C= 0<br>Open collector|
|DC current gain|_h_FE|160|250|400||_V_CE= 3 V,_I_C= 25 mA<br>Pulse measured|
## **5.2 General AC Characteristics**
**Table 5-2 General AC Characteristics at** _**T**_ **A = 25 °C**
|**Table 5-2**<br>**General AC Characterist**|**ics at****_T_A =**|**25 °C**|**25 °C**|**25 °C**|||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note / Test Condition**|
|||**Min.**|**Typ.**|**Max.**|||
|Transition frequency|_f_T|–|47|–|GHz|_V_CE= 3 V,_I_C= 25 mA<br>_f_= 1 GHz|
|Collector base capacitance|_C_CB|–|0.08|–|pF|_V_CB= 3 V,_V_BE= 0<br>_f_= 1 MHz<br>Emitter grounded|
|Collector emitter capacitance|_C_CE|–|0.4|–|pF|_V_CE= 3 V,_V_BE= 0<br>_f_= 1 MHz<br>Base grounded|
|Emitter base capacitance|_C_EB|–|0.5|–|pF|_V_EB= 0.4 V,_V_CB= 0<br>_f_= 1 MHz<br>Collector grounded|
Data Sheet
11
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**BFP740FESD**
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## **Electrical Characteristics**
## **5.3 Frequency Dependent AC Characteristics**
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, _T_ A = 25 °C
**==> picture [451 x 191] intentionally omitted <==**
**----- Start of picture text -----**<br>
VC<br>Top View<br>Bias-T<br>OUT<br>E C<br>VB<br>B E<br>Bias-T (Pin 1)<br>IN<br>**----- End of picture text -----**<br>
## **Figure 5-1 BFP740FESD Testing Circuit**
**Table 5-3 AC Characteristics,** _**V**_ **CE = 3 V,** _**f**_ **= 150 MHz**
|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note / Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|**Maximum power gain**<br>Low noise operation point<br>High linearity operation point|_G_ms<br>_G_ms|–<br>–|33.5<br>39|–<br>–|dB|_I_C= 6 mA<br>_I_C = 25 mA|
|**Transducer gain**<br>Low noise operation point<br>High linearity operation point|_S_21<br>_S_21|–<br>–|25<br>34|–<br>–|dB|_Z_S=_Z_L= 50 Ω<br>_I_C= 6 mA<br>_I_C = 25 mA|
|**Minimum noise figure**<br>Minimum noise figure<br>Associated gain|_NF_min<br>_G_ass|–<br>–|0.5<br>31|–<br>–|dB|_Z_S=_Z_opt<br>_I_C= 6 mA<br>_I_C = 6 mA|
|**Linearity**<br>1 dB gain compression point<br>3rd order intercept point|_OP_1dB<br>_OIP_3|–<br>–|10<br>23.5|–<br>–|dBm|_Z_S=_Z_L= 50 Ω<br>_I_C= 25 mA<br>_I_C = 25 mA|
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## **Electrical Characteristics**
**Table 5-4 AC Characteristics,** _**V**_ **CE = 3 V,** _**f**_ **= 450 MHz**
|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note / Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|**Maximum power gain**<br>Low noise operation point<br>High linearity operation point|_G_ms<br>_G_ms|–<br>–|29<br>34|–<br>–|dB|_I_C= 6 mA<br>_I_C = 25 mA|
|**Transducer gain**<br>Low noise operation point<br>High linearity operation point|_S_21<br>_S_21|–<br>–|24.5<br>32.5|–<br>–|dB|_Z_S=_Z_L= 50 Ω<br>_I_C= 6 mA<br>_I_C = 25 mA|
|**Minimum noise figure**<br>Minimum noise figure<br>Associated gain|_NF_min<br>_G_ass|–<br>–|0.5<br>29|–<br>–|dB|_Z_S=_Z_opt<br>_I_C= 6 mA<br>_I_C = 6 mA|
|**Linearity**<br>1 dB gain compression point<br>3rd order intercept point|_OP_1dB<br>_OIP_3|–<br>–|10<br>23.5|–<br>–|dBm|_Z_S=_Z_L= 50 Ω<br>_I_C= 25 mA<br>_I_C = 25 mA|
**Table 5-5 AC Characteristics,** _**V**_ **CE = 3 V,** _**f**_ **= 900 MHz**
|**Table 5-5**<br>**AC Characteristics,****_V_CE**|**= 3 V,****_f_ = 9**|**00 MHz**|**00 MHz**|**00 MHz**|||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note / Test Condition**|
|||**Min.**|**Typ.**|**Max.**|||
|**Maximum power gain**<br>Low noise operation point<br>High linearity operation point|_G_ms<br>_G_ms|–<br>–|26<br>30.5|–<br>–|dB|_I_C= 6 mA<br>_I_C = 25 mA|
|**Transducer gain**<br>Low noise operation point<br>High linearity operation point|_S_21<br>_S_21|–<br>–|24<br>29.5|–<br>–|dB|_Z_S=_Z_L= 50 Ω<br>_I_C= 6 mA<br>_I_C = 25 mA|
|**Minimum noise figure**<br>Minimum noise figure<br>Associated gain|_NF_min<br>_G_ass|–<br>–|0.55<br>26.5|–<br>–|dB|_Z_S=_Z_opt<br>_I_C= 6 mA<br>_I_C = 6 mA|
|**Linearity**<br>1 dB gain compression point<br>3rd order intercept point|_OP_1dB<br>_OIP_3|–<br>–|10<br>24|–<br>–|dBm|_Z_S=_Z_L= 50 Ω<br>_I_C= 25 mA<br>_I_C = 25 mA|
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## **Electrical Characteristics**
**Table 5-6 AC Characteristics,** _**V**_ **CE = 3 V,** _**f**_ **= 1.5 GHz**
|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note / Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|**Maximum power gain**<br>Low noise operation point<br>High linearity operation point|_G_ms<br>_G_ms|–<br>–|23.5<br>28|–<br>–|dB|_I_C= 6 mA<br>_I_C = 25 mA|
|**Transducer gain**<br>Low noise operation point<br>High linearity operation point|_S_21<br>_S_21|–<br>–|22<br>26|–<br>–|dB|_Z_S=_Z_L= 50 Ω<br>_I_C= 6 mA<br>_I_C = 25 mA|
|**Minimum noise figure**<br>Minimum noise figure<br>Associated gain|_NF_min<br>_G_ass|–<br>–|0.55<br>24|–<br>–|dB|_Z_S=_Z_opt<br>_I_C= 6 mA<br>_I_C = 6 mA|
|**Linearity**<br>1 dB gain compression point<br>3rd order intercept point|_OP_1dB<br>_OIP_3|–<br>–|10<br>24|–<br>–|dBm|_Z_S=_Z_L= 50 Ω<br>_I_C= 25 mA<br>_I_C = 25 mA|
**Table 5-7 AC Characteristics,** _**V**_ **CE = 3 V,** _**f**_ **= 1.9 GHz**
|**Table 5-7**<br>**AC Characteristics,****_V_CE**|**= 3 V,****_f_ = 1**|**.9 GHz**|**.9 GHz**|**.9 GHz**|||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note / Test Condition**|
|||**Min.**|**Typ.**|**Max.**|||
|**Maximum power gain**<br>Low noise operation point<br>High linearity operation point|_G_ms<br>_G_ms|–<br>–|22.5<br>27|–<br>–|dB|_I_C= 6 mA<br>_I_C = 25 mA|
|**Transducer gain**<br>Low noise operation point<br>High linearity operation point|_S_21<br>_S_21|–<br>–|21<br>24.5|–<br>–|dB|_Z_S=_Z_L= 50 Ω<br>_I_C= 6 mA<br>_I_C = 25 mA|
|**Minimum noise figure**<br>Minimum noise figure<br>Associated gain|_NF_min<br>_G_ass|–<br>–|0.55<br>22|–<br>–|dB|_Z_S=_Z_opt<br>_I_C= 6 mA<br>_I_C = 6 mA|
|**Linearity**<br>1 dB gain compression point<br>3rd order intercept point|_OP_1dB<br>_OIP_3|–<br>–|10<br>24.5|–<br>–|dBm|_Z_S=_Z_L= 50 Ω<br>_I_C= 25 mA<br>_I_C = 25 mA|
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## **Electrical Characteristics**
**Table 5-8 AC Characteristics,** _**V**_ **CE = 3 V,** _**f**_ **= 2.4 GHz**
|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note / Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|**Maximum power gain**<br>Low noise operation point<br>High linearity operation point|_G_ms<br>_G_ms|–<br>–|22<br>26|–<br>–|dB|_I_C= 6 mA<br>_I_C = 25 mA|
|**Transducer gain**<br>Low noise operation point<br>High linearity operation point|_S_21<br>_S_21|–<br>–|20<br>22.5|–<br>–|dB|_Z_S=_Z_L= 50 Ω<br>_I_C= 6 mA<br>_I_C = 25 mA|
|**Minimum noise figure**<br>Minimum noise figure<br>Associated gain|_NF_min<br>_G_ass|–<br>–|0.6<br>20.5|–<br>–|dB|_Z_S=_Z_opt<br>_I_C= 6 mA<br>_I_C = 6 mA|
|**Linearity**<br>1 dB gain compression point<br>3rd order intercept point|_OP_1dB<br>_OIP_3|–<br>–|10<br>24.5|–<br>–|dBm|_Z_S=_Z_L= 50 Ω<br>_I_C= 25 mA<br>_I_C = 25 mA|
**Table 5-9 AC Characteristics,** _**V**_ **CE = 3 V,** _**f**_ **= 3.5 GHz**
|**Table 5-9**<br>**AC Characteristics,****_V_CE**|**= 3 V,****_f_ = 3**|**.5 GHz**|**.5 GHz**|**.5 GHz**|||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note / Test Condition**|
|||**Min.**|**Typ.**|**Max.**|||
|**Maximum power gain**<br>Low noise operation point<br>High linearity operation point|_G_ms<br>_G_ms|–<br>–|20.5<br>24|–<br>–|dB|_I_C= 6 mA<br>_I_C = 25 mA|
|**Transducer gain**<br>Low noise operation point<br>High linearity operation point|_S_21<br>_S_21|–<br>–|17<br>19.5|–<br>–|dB|_Z_S=_Z_L= 50 Ω<br>_I_C= 6 mA<br>_I_C = 25 mA|
|**Minimum noise figure**<br>Minimum noise figure<br>Associated gain|_NF_min<br>_G_ass|–<br>–|0.65<br>17|–<br>–|dB|_Z_S=_Z_opt<br>_I_C= 6 mA<br>_I_C = 6 mA|
|**Linearity**<br>1 dB gain compression point<br>3rd order intercept point|_OP_1dB<br>_OIP_3|–<br>–|10<br>24.5|–<br>–|dBm|_Z_S=_Z_L= 50 Ω<br>_I_C= 25 mA<br>_I_C = 25 mA|
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## **Electrical Characteristics**
## **Table 5-10 AC Characteristics,** _**V**_ **CE = 3 V,** _**f**_ **= 5.5 GHz**
|**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note / Test Condition**|
|---|---|---|---|---|---|---|
|||**Min.**|**Typ.**|**Max.**|||
|**Maximum power gain**<br>Low noise operation point<br>High linearity operation point|_G_ms<br>_G_ma|–<br>–|19<br>20.5|–<br>–|dB|_I_C= 6 mA<br>_I_C = 25 mA|
|**Transducer gain**<br>Low noise operation point<br>High linearity operation point|_S_21<br>_S_21|–<br>–|13.5<br>15.5|–<br>–|dB|_Z_S=_Z_L= 50 Ω<br>_I_C= 6 mA<br>_I_C = 25 mA|
|**Minimum noise figure**<br>Minimum noise figure<br>Associated gain|_NF_min<br>_G_ass|–<br>–|0.8<br>14.5|–<br>–|dB|_Z_S=_Z_opt<br>_I_C= 6 mA<br>_I_C = 6 mA|
|**Linearity**<br>1 dB gain compression point<br>3rd order intercept point|_OP_1dB<br>_OIP_3|–<br>–|10<br>23.5|–<br>–|dBm|_Z_S=_Z_L= 50 Ω<br>_I_C= 25 mA<br>_I_C = 25 mA|
**Table 5-11 AC Characteristics,** _**V**_ **CE = 3 V,** _**f**_ **= 10 GHz**
|**Table 5-11 AC Characteristics,****_V_CE**|**= 3 V,****_f_ = 1**|**0 GHz**|**0 GHz**|**0 GHz**|||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|**Note / Test Condition**|
|||**Min.**|**Typ.**|**Max.**|||
|**Maximum power gain**<br>Low noise operation point<br>High linearity operation point|_G_ma<br>_G_ma|–<br>–|12.5<br>14|–<br>–|dB|_I_C= 6 mA<br>_I_C = 25 mA|
|**Transducer gain**<br>Low noise operation point<br>High linearity operation point|_S_21<br>_S_21|–<br>–|7<br>9|–<br>–|dB|_Z_S=_Z_L= 50 Ω<br>_I_C= 6 mA<br>_I_C = 25 mA|
|**Minimum noise figure**<br>Minimum noise figure<br>Associated gain|_NF_min<br>_G_ass|–<br>–|1.45<br>9|–<br>–|dB|_Z_S=_Z_opt<br>_I_C= 6 mA<br>_I_C = 6 mA|
|**Linearity**<br>1 dB gain compression point<br>3rd order intercept point|_OP_1dB<br>_OIP_3|–<br>–|8<br>21|–<br>–|dBm|_Z_S=_Z_L= 50 Ω<br>_I_C= 25 mA<br>_I_C = 25 mA|
## **Notes**
_1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k[2] -1)[1/2] ) for k > 1_
_2. In order to get the NF min values stated in this chapter the test fixture losses have been subtracted from all measured results._
_3. OIP 3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50_ Ω _from 0.2 MHz to 12 GHz._
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**Electrical Characteristics**
## **5.4 Characteristic DC Diagrams**
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**----- Start of picture text -----**<br>
50<br>IB = 225µA<br>40 IB = 205µA<br>IB = 185µA<br>IB = 165µA<br>30 IB = 145µA<br>IB = 125µA<br>IB = 105µA<br>20 IB = 85µA<br>IB = 65µA<br>IB = 45µA<br>10<br>IB = 25µA<br>IB = 5µA<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5<br>VCE [V]<br> [mA]<br>IC<br>**----- End of picture text -----**<br>
**Figure 5-2 Collector Current vs. Collector Emitter Voltage** _**I**_ **C =** _**f**_ **(VCE),** _**I**_ **B = Parameter in µA**
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**----- Start of picture text -----**<br>
1000<br>100<br>0.1 1 10 100<br>IC [mA]<br>FE<br>h<br>**----- End of picture text -----**<br>
**Figure 5-3 DC Current Gain** _**h**_ **FE =** _**f**_ **(** _**I**_ **C),** _**V**_ **CE = 3 V**
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## **Electrical Characteristics**
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100<br>10<br>1<br>0.1<br>0.01<br>0.001<br>0.0001<br>0.5 0.6 0.7 0.8 0.9<br>VBE [V]<br> [mA]<br>IC<br>**----- End of picture text -----**<br>
**Figure 5-4 Collector Current vs. Base Emitter Voltage** _**I**_ **C =** _**f**_ **(** _**V**_ **BE),** _**V**_ **CE = 2 V**
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1<br>0.1<br>0.01<br>0.001<br>0.0001<br>0.00001<br>0.5 0.6 0.7 0.8 0.9<br>VBE [V]<br> [mA]<br>IB<br>**----- End of picture text -----**<br>
**Figure 5-5 Base Current vs. Base Emitter Forward Voltage** _**I**_ **B =** _**f**_ **(** _**V**_ **BE),** _**V**_ **CE = 2 V**
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## **Electrical Characteristics**
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**----- Start of picture text -----**<br>
1.E-04<br>1.E-05<br>1.E-06<br>1.E-07<br>1.E-08<br>1.E-09<br>1.E-10<br>1.E-11<br>0.3 0.4 0.5 0.6 0.7 0.8<br>VEB [V]<br> [A]<br>IB<br>**----- End of picture text -----**<br>
**Figure 5-6 Base Current vs. Base Emitter Reverse Voltage** _**I**_ **B =** _**f**_ **(** _**V**_ **EB),** _**V**_ **CE = 2 V**
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## **Electrical Characteristics**
## **5.5 Characteristic AC Diagrams**
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**----- Start of picture text -----**<br>
50<br> 4.00V<br> 3.00V<br>45<br> 2.50V<br>40<br> 2.00V<br>35<br>30<br>25<br>20<br>15<br>10<br> 1.00V<br>5<br>0<br>0 5 10 15 20 25 30 35 40<br>I [mA]<br>C<br> [GHz]<br>fT<br>**----- End of picture text -----**<br>
**Figure 5-7 Transition Frequency** _**f**_ **T =** _**f**_ **(** _**I**_ **C),** _**f**_ **= 1 GHz,** _**V**_ **CE = Parameter in V**
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**----- Start of picture text -----**<br>
30<br>25<br>20<br>15<br>10<br>5 2V, 2.4GHz<br>3V, 2.4GHz<br>2V, 5.5GHz<br>0 3V, 5.5GHz<br>−5<br>0 5 10 15 20 25 30 35<br>I [mA]<br>C<br> [dBm]<br>3<br>OIP<br>**----- End of picture text -----**<br>
**Figure 5-8 3rd Order Intercept Point** _**OIP**_ **3 =** _**f**_ **(** _**I**_ **C),** _**Z**_ **S =** _**Z**_ **L= 50** Ω **,** _**V**_ **CE,** _**f**_ **= Parameters**
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## **Electrical Characteristics**
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**----- Start of picture text -----**<br>
0.2<br>0.18<br>0.16<br>0.14<br>0.12<br>0.1<br>0.08<br>0.06<br>0.04<br>0.02<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4<br>VCB [V]<br> [pF]<br>cb<br>C<br>**----- End of picture text -----**<br>
**Figure 5-9 Collector Base Capacitance** _**C**_ **CB** _**= f**_ **(** _**V**_ **CB),** _**f**_ **= 1 MHz**
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50<br>45<br>40<br>35<br>30<br>G<br>ms<br>25<br>G<br>ma<br>20<br>|S21| [2]<br>15<br>10<br>5<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>f [GHz]<br>G [dB]<br>**----- End of picture text -----**<br>
**Figure 5-10 Gain** _**G**_ **ma,** _**G**_ **ms, I** _**S**_ **21I² =** _**f**_ **(** _**f**_ **),** _**V**_ **CE = 3 V,** _**I**_ **C = 25 mA**
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## **Electrical Characteristics**
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**----- Start of picture text -----**<br>
44<br>41<br> 0.15GHz<br>38<br>35 0.45GHz<br>32 0.90GHz<br>29 1.50GHz<br> 1.90GHz<br> 2.40GHz<br>26<br> 3.50GHz<br>23<br>20 5.50GHz<br>17<br>14 10.00GHz<br>11<br>8<br>5<br>0 5 10 15 20 25 30 35 40 45<br>I [mA]<br>C<br>G [dB]<br>**----- End of picture text -----**<br>
**Figure 5-11 Maximum Power Gain** _**G**_ **max =** _**f**_ **(** _**I**_ **C),** _**V**_ **CE = 3 V,** _**f**_ **= Parameter in GHz**
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44<br>41<br> 0.15GHz<br>38<br>35<br> 0.45GHz<br>32<br> 0.90GHz<br>29<br> 1.50GHz<br> 1.90GHz<br>26 2.40GHz<br> 3.50GHz<br>23<br>5.50GHz<br>20<br>17<br>14 10.00GHz<br>11<br>8<br>5<br>0 1 2 3 4 5<br>V [V]<br>CE<br>G [dB]<br>**----- End of picture text -----**<br>
**Figure 5-12 Maximum Power Gain** _**G**_ **max =** _**f**_ **(** _**V**_ **CE),** _**I**_ **C = 25 mA,** _**f**_ **= Parameter in GHz**
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## **Electrical Characteristics**
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10 GHz<br>10 MHz<br>Ic = 6 mA<br>Step 1 GHz Ic = 25 mA<br>10<br>5<br>4<br>-0.2<br>3<br>-0.4<br>2<br>-0.6<br>-0.8<br>1<br>0.2 0.4 0.6 0.8 1 2 3 4 5 10<br>0<br>-1<br>0.8<br>0.6<br>-2<br>0.4<br>-3<br>-4<br>0.2<br>-5<br>-10<br>**----- End of picture text -----**<br>
**Figure 5-13 Input Matching** _**S**_ **11 =** _**f**_ **(** _**f**_ **),** _**V**_ **CE = 3 V,** _**I**_ **C = 6 / 25 mA**
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**----- Start of picture text -----**<br>
2.4 GHz<br>5.5 GHz<br>0.45 GHz<br>10 GHz<br>Ic = 6 mA<br>Ic = 25 mA<br>10<br>5<br>4<br>-0.2<br>3<br>-0.4<br>2<br>-0.6<br>-0.8<br>1<br>0.2 0.4 0.6 0.8 1 2 3 4 5 10<br>0<br>-1<br>0.8<br>0.6<br>-2<br>0.4<br>-3<br>-4<br>0.2<br>-5<br>-10<br>**----- End of picture text -----**<br>
**Figure 5-14 Source Impedance for Minimum Noise Figure** _**Z**_ **opt =** _**f**_ **(** _**f**_ **),** _**V**_ **CE = 3 V,** _**I**_ **C = 6 / 25 mA**
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## **Electrical Characteristics**
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10 GHz<br>10 MHz<br>Ic = 6mA<br>Step 1 GHz Ic = 25mA<br>Figure 5-15 Output Matching S 22 = f ( f ), V CE = 3 V, I C = 6 / 25 mA<br>2<br>1.8<br>1.6<br>1.4<br>1.2<br>1<br>0.8<br>0.6<br>I = 25mA<br>0.4 C<br>I = 6.0mA<br>C<br>0.2<br>0<br>0 2 4 6 8 10<br>f [GHz]<br>10<br>5<br>-0.2<br>4<br>3<br>-0.4<br>2<br>-0.6<br>-0.8<br>1<br>0.2 0.4 0.6 0.8 1 2 3 4 5 10<br>0<br>-1<br>NFmin [dB]<br>0.8<br>0.6<br>-2<br>0.4<br>-3<br>-4<br>0.2<br>-5<br>-10<br>**----- End of picture text -----**<br>
**Figure 5-16 Noise Figure** _**NF**_ **min =** _**f**_ **(** _**f**_ **),** _**V**_ **CE = 3 V,** _**I**_ **C = 6 / 25 mA,** _**Z**_ **S =** _**Z**_ **opt**
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## **Electrical Characteristics**
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3<br>2.8<br>2.6<br>2.4<br>f = 10GHz<br>2.2 f = 5.5GHz<br>f = 2.4GHz<br>2<br>f = 0.45GHz<br>1.8<br>1.6<br>1.4<br>1.2<br>1<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 5 10 15 20 25 30 35<br>I [mA]<br>c<br>NFmin [dB]<br>**----- End of picture text -----**<br>
**Figure 5-17 Noise Figure** _**NF**_ **min =** _**f**_ **(** _**I**_ **C),** _**V**_ **CE = 3 V,** _**Z**_ **S =** _**Z**_ **opt,** _**f**_ **= Parameter in GHz**
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6<br>5.6<br>5.2<br>4.8<br>4.4<br>4<br>f = 10GHz<br>3.6 f = 5.5GHz<br>f = 2.4GHz<br>3.2 f = 0.45GHz<br>2.8<br>2.4<br>2<br>1.6<br>1.2<br>0.8<br>0.4<br>0<br>0 5 10 15 20 25 30 35<br>I [mA]<br>c<br>NF50 [dB]<br>**----- End of picture text -----**<br>
**Figure 5-18 Noise Figure** _**NF**_ **50 =** _**f**_ **(** _**I**_ **C),** _**V**_ **CE = 3 V,** _**Z**_ **S = 50** Ω **,** _**f**_ **= Parameter in GHz**
_Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. T_ A = 25 °C
Data Sheet
25
Revision 1.2, 2012-10-11
**BFP740FESD**
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**Simulation Data**
## **6 Simulation Data**
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website: **www.infineon.com/rf.models** . Please consult our website and download the latest versions before actually starting your design.
You find the BFP740FESD SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device.
The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP740FESD SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted.
Data Sheet
26
Revision 1.2, 2012-10-11
**BFP740FESD**
**Package Information TSFP-4-1**
## **7 Package Information TSFP-4-1**
**Figure 7-1 Package Outline**
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1.4 ±0.05<br>0.2 ±0.05 0.55 ±0.04<br>4 3<br>+4<br>1 2<br>0.2 ±0.05<br>0.5 [±0.05] 0.15 ±0.05<br>0.5 [±0.05]<br>1<br>TSFP-4-1, -2-PO V04<br>0.35<br>{ /<br>i<br>0.5 0.5<br>Be<br>TSFP-4-1, -2-FP V04<br>±0.05<br>0.8<br>±0.05 ±0.05<br>1.2 0.2<br>10° MAX.<br>0.45<br>0.9<br>**----- End of picture text -----**<br>
**Figure 7-2 Package Footprint**
**Figure 7-3 Marking Description (Marking BFP740FESD: T7s)**
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4 0.2<br>= ¥<br>Pin 1 1.55 0.7<br>TSFP-4-1, -2-TP V05<br>1.4 8<br>**----- End of picture text -----**<br>
**Figure 7-4 Tape Dimensions**
Data Sheet
27
Revision 1.2, 2012-10-11
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
Updated at April 21, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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