BFP410H6327XTSA1

Bipolar - RF Transistor, NPN, 4.5 V, 25 GHz, 150 mW, 40 mA, SOT-343

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Manufacturer: INFINEON
Product type: Bipolar RF Transistors
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:4.5V; Transition Frequency ft:25GHz; Power Dissipation Pd:150mW; DC Collector Current:40mA; DC Current Gain hFE:60hFE;
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 4Pins
Product Range: -
Qualification: AEC-Q101
Power Dissipation: 150mW
Transistor Mounting: Surface Mount
Transistor Polarity: NPN
Transition Frequency: 25GHz
Transistor Case Style: SOT-343
DC Current Gain hFE Min: 60hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 40mA
Collector Emitter Voltage Max: 4.5V

Delivery and price
Units per pack	5000
Price	0.19 €
Current stock	50+
Lead time	30 days

Datasheet

**BFP410** 

## **Low Noise Silicon Bipolar RF Transistor** 

- Low current device suitable e.g. for handhelds 

- For high frequency oscillators e.g. DRO for LNB 

- For ISM band applications like 

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(=,<br>3<br>2<br>4<br>fA 1<br>**----- End of picture text -----**<br>


Automatic Meter Reading, Sensors etc. 

- Transit frequency _f_ T = 25 GHz 

- Pb-free (RoHS compliant) and halogen-free package 

- with visible leads 

- Qualification report according to AEC-Q101 available 

|**Maximum Ratings**at_T_A= 25 °C, unless otherwise specified|= 25 °C, unless otherwise specified|= 25 °C, unless otherwise specified||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Collector-emitter voltage<br>_T_A= 25 °C<br>_T_A= -55 °C|_V_CEO<br>Pf|4.5<br>4.1<br>Pf|V|
|Collector-emitter voltage|_V_CES<br>ee|13<br>ee||
|Collector-base voltage|_V_CBO<br>es<br>eeeee|13<br>es<br>eee||
|Emitter-base voltage|_V_EBO<br>eeeee|1.5<br>eee||
|Collector current|_I_C<br>eeeee<br>es|40<br>eee<br>es|mA|
|Base current|_I_B<br>es|6<br>es||
|Total power dissipation1)<br>_T_S ≤100 °C|_P_tot<br>||150<br>||mW|
|Junction temperature|_T_J<br>es|150<br>es|°C|
|Storage temperature|_T_Stg<br>ee|-55 ... 150<br>ee||



> 1 _T_ S is measured on the emitter lead at the soldering point to the pcb 

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**BFP410** 

|**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**|**Thermal Resistance**|
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Junction - soldering point1)|_R_thJS|335|K/W|



**Electrical Characteristics** at _T_ A = 25 °C, unless otherwise specified 

|**Electrical Characteristics**at_T_A= 25 °C,unless|otherwise s|pecified|pecified|pecified||
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**DC Characteristics**||||||
|Collector-emitter breakdown voltage<br>_I_C= 1 mA,_I_B= 0|_V_(BR)CEO|4.5|5|-|V|
|Collector-emitter cutoff current<br>_V_CE= 2 V,_V_BE= 0<br>_V_CE= 5 V,_V_BE= 0 ,_T_A= 85 °C<br>(verified by random sampling)|_I_CES|-<br>-|1<br>2|30<br>50|nA|
|Collector-base cutoff current<br>_V_CB= 2 V,_I_E= 0|_I_CBO|-|1|30||
|Emitter-base cutoff current<br>_V_EB= 0.5 V,_I_C= 0|_I_EBO|-|0.001|0.6|µA|
|DC current gain<br>_I_C= 13 mA,_V_CE= 2 V, pulse measured|_h_FE|60|95|130|-|



> 1For the definition of _R_ thJS please refer to Application Note AN077 (Thermal Resistance Calculation) 

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**BFP410** 

|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|**Electrical Characteristics**at_T_A= 25 °C, unless otherwise specified|
|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Values**|||**Unit**|
|||**min.**|**typ.**|**max.**||
|**AC Characteristics**(verified by random sampling)||||||
|Transition frequency<br>_I_C= 20 mA,_V_CE= 2 V,_f_= 2 GHz|_f_T|18|25|-|GHz|
|Collector-base capacitance<br>_V_CB= 2 V,_f_= 1 MHz,_V_BE= 0 ,<br>emitter grounded|_C_cb|-|0.09|0.17|pF|
|Collector emitter capacitance<br>_V_CE= 2 V,_f_= 1 MHz,_V_BE= 0 ,<br>base grounded|_C_ce|-|0.35|-||
|Emitter-base capacitance<br>_V_EB= 0.5 V,_f_= 1 MHz,_V_CB= 0 ,<br>collector grounded|_C_eb|-|0.45|-||
|Minimum noise figure<br>_I_C= 2 mA,_V_CE= 2 V,_f_= 2 GHz,_Z_S=_Z_Sopt|_NF_min|-|1.2|-|dB|
|Power gain, maximum stable1)<br>_I_C= 20 mA,_V_CE= 2 V,_Z_S=_Z_Sopt,<br>_Z_L=_Z_Lopt,_f_= 2 GHz|_G_ms|-|21.5|-|dB|
|Insertion power gain<br>_V_CE= 2 V,_I_C= 20 mA,_f_= 2 GHz,<br>_Z_S=_Z_L= 50Ω||_S_21|2|-|18.5|-||
|Third order intercept point at output2)<br>_V_CE= 2 V,_I_C= 20 mA,_f_= 2 GHz,<br>_Z_S=_Z_L= 50Ω|_IP3_|-|23.5|-|dBm|
|1dB compression point at output<br>_I_C= 20 mA,_V_CE= 2 V,_Z_S=_Z_L= 50Ω,<br>_f_= 2 GHz|_P_-1dB|-|10.5|-||



> 1 _G_ ms = | _S_ 21 / _S_ 12| 

2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 

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**BFP410** 

## **Total power dissipation** _P_ tot = ƒ( _T_ S) 

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180<br>mW<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 20 40 60 80 100 120 °C 160<br>T S<br>tot<br>P<br>**----- End of picture text -----**<br>


## **Transition frequency** _f_ T = ƒ( _I_ C) 

## _f_ = 2 GHz 

**Collector-base capacitance** _C_ cb= ƒ( _V_ CB) _f_ = 1MHz 

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0.3<br>pF<br>0.2<br>0.15<br>0.1<br>0.05<br>0<br>0 0.5 1 1.5 2 2.5 3 V 4<br>V CB<br>CB<br>C<br>**----- End of picture text -----**<br>


**Power gain** _G_ ma, _G_ ms, | _S_ 21|[2] = ƒ ( _f_ ) _V_ CE = 2 V, _I_ C = 13 mA 

## _V_ CE = parameter in V 

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26<br>3 to 4V<br>GHz<br>2V<br>22 1V<br>20<br>18<br>16<br>14<br>0.5V<br>12<br>10<br>8<br>6<br>4<br>2<br>0 4 8 12 16 20 24 mA 32<br>I C<br>f T<br>**----- End of picture text -----**<br>


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45<br>dB<br>35<br>30<br>Gms<br>25<br>20<br>15<br>|S21|² Gma<br>10<br>5<br>0<br>0 2 4 6 GHz 10<br>f<br>G<br>**----- End of picture text -----**<br>


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4 

**BFP410** 

**Power gain** _G_ ma, _G_ ms =  ƒ ( _I_ C) 

_V_ = 2V CE 

## _f_ = parameter in GHz 

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40<br>0.15GHz<br>dB<br>0.45GHz<br>32<br>0.9GHz<br>28<br>1.5GHz<br>24<br>1.9GHz<br>20 2.4GHz<br>16 3.5GHz<br>12 5.5GHz<br>8<br>10GHz<br>4<br>0<br>0 4 8 12 16 20 24 28 mA 36<br>I C<br>G<br>**----- End of picture text -----**<br>


**Noise figure** _F_ =  ƒ( _I_ C) _V_ CE = 2 V, _Z_ S _= Z_ Sopt 

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4.5<br>dB<br>3.5<br>3<br>2.5<br>2<br>1.5<br>f= 10.0   GHz<br>f=   5.5   GHz<br>1<br>f=   2.4   GHz<br>f=   1.8   GHz<br>0.5 f=   0.9   GHz<br>f=   0.45 GHz<br>0<br>0 4 8 12 16 20 24 mA 30<br>I C<br>min<br>F<br>**----- End of picture text -----**<br>


**Power gain** _G_ ma, _G_ ms = ƒ ( _V_ CE) _I_ C = 13 mA 

_f_ = parameter in GHz 

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40<br>dB<br>0.15GHz<br>32 0.45GHz<br>28 0.9GHz<br>1.5GHz<br>24<br>1.9GHz<br>2.4GHz<br>20<br>16 3.5GHz<br>12 5.5GHz<br>8<br>10GHz<br>4<br>0<br>0 1 2 3 4 V 6<br>V CE<br>G<br>**----- End of picture text -----**<br>


**Noise figure** _F_ = ƒ( _I_ C) _V_ CE = 2 V, _f_ = 2 GHz 

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4<br>dB<br>3<br>2.5<br>2<br>1.5<br>1 ZS=50Ohm<br>ZS=ZSopt<br>0.5<br>0<br>0 4 8 12 16 mA 24<br>I C<br>F<br>**----- End of picture text -----**<br>


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**BFP410** 

## **Collector current** _I_ C =  ƒ( _V_ BE) _V_ =2 V CE 

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10 2<br>mA<br>10 1<br>10 0<br>10 -1<br>10 -2<br>10 -3<br>10 -4<br>0.2 0.4 0.6 0.8 V 1.2<br>V BE<br>I C<br>**----- End of picture text -----**<br>


## **Collector current** _I_ C =  ƒ( _V_ CE) Parameter _I_ B 

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25<br>mA<br>160µA<br>15<br>90µA<br>10<br>5<br>20µA<br>0<br>0 1 2 3 V 5<br>V CE<br>I C<br>**----- End of picture text -----**<br>


## **DC current gain** _h_ FE = ƒ( _I_ C) 

## _V_ = 2 V CE 

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10 3<br>10 2<br>10 1<br>10 0<br>10  [-1 ] 10  [0 ] 10  [1 ] mA 10  [2 ]<br>I C<br>FE<br>h<br>**----- End of picture text -----**<br>


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**Package SOT343** 

**BFP410** 

2013-08-16 

7 

**BFP410** 

## **Edition 2009-11-16** 

**Published by Infineon Technologies AG 81726 Munich, Germany** 

##  **2009 Infineon Technologies AG All Rights Reserved.** 

## **Legal Disclaimer** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 

## **Information** 

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). 

## **Warnings** 

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 

Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 

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Updated at April 21, 2026

Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.

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