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BFP196WNH6327XTSA1
Bipolar - RF Transistor, NPN, 12 V, 7.5 GHz, 700 mW, 150 mA, SOT-343
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- Manufacturer: INFINEON
- Product type: Bipolar RF Transistors
- Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:7.5GHz; Power Dissipation Pd:700mW; DC Collector Current:150mA; DC Current Gain hFE:70hFE
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 700mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 7.5GHz
- Transistor Case Style: SOT-343
- DC Current Gain hFE Min: 70hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 150mA
- Collector Emitter Voltage Max: 12V
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.097 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## **BFP196WN** ## **Low noise silicon bipolar RF transistor** ## **Product description** - NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchmark quality and reliability. ## **Features** - For high voltage applications VCE < 12 V - Maximal power Ptot = 700 mW - Transition frequency fT = 7.5 GHz - Noise figure NFmin = 1.3 dB at 900 MHz - Easy to use Pb-free (RoHS compliant) and halogen-free industry standard SOT343 package with visible leads **==> picture [38 x 63] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>3<br>1, 4<br>**----- End of picture text -----**<br> ## **Application** - GNSS active antenna - Amplifiers in antenna and telecommunications systems - CATV - Power amplifier for DECT and PCN systems ## **Product validation** Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 ## **Device information** _**Attention** :_ _**ESD (Electrostatic discharge) sensitive device, observe handling precautions**_ **Type / Ordering code Package Pin configuration Marking Related Links** BFP196WN / SOT343 1=E 2=C 3=B 4=E DAs see _**Package**_ BFP196WNH6327XTSA1 _**information SOT343**_ ~~a~~ Please read the Important Notice and Warnings at the end of this document Datasheet **www.infineon.com** Revision 1.1 2020-10-14 **BFP196WN Low noise silicon bipolar RF transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ## **Table of contents** ||**Product description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Application**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Device information**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Absolute maximum ratings**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**2**|**Thermal characteristics**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4| |**3**|**Electrical performance in test fixture**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |3.1|DC parameter table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |3.2|AC parameter tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |3.3|Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8| |3.4|Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |**4**|**Package information SOT343**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18| Datasheet Revision 1.1 2020-10-14 2 **BFP196WN Low noise silicon bipolar RF transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Absolute maximum ratings** ## **1 Absolute maximum ratings** |**1**<br>**Absolute maximum ratings**|**1**<br>**Absolute maximum ratings**|**1**<br>**Absolute maximum ratings**|**1**<br>**Absolute maximum ratings**|**1**<br>**Absolute maximum ratings**|**1**<br>**Absolute maximum ratings**| |---|---|---|---|---|---| |**Table 1**<br>**Absolute maximum ratings at TA = 25 °C (unless otherwise specified)**|||||| |**Parameter**|**Symbol**|**Values**||**Unit**|**Note or Test condition**| |||**Min.**|**Max.**||| |Collector emitter voltage|VCEO|–|12|V|Base open| |Collector emitter voltage|VCES|–|20|V|Emitter / base short circuited| |Collector base voltage|VCBO|–|20|V|Emitter open| |Emitter base voltage|VEBO|–|2|V|Collector open| |DC collector current|IC|–|150|mA|–| |DC base current|IB|–|15|mA|–| |Total power|Ptot|–|700|mW|–| |Junction temperature|TJ|–|150|°C|–| |Storage temperature|TStg|-55|150|°C|–| _**Attention** :_ _**Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings. Exceeding only one of these values may cause irreversible damage to the component.**_ Datasheet Revision 1.1 2020-10-14 3 **BFP196WN Low noise silicon bipolar RF transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Thermal characteristics** ## **2 Thermal characteristics** ## **Table 2 Thermal resistance** |**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note or Test Condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |Junction - soldering point|RthJS|–|115|–|K/W|**_1)_**| **==> picture [357 x 278] intentionally omitted <==** ## **Figure 1 Absolute maximum power dissipation Ptot vs. Ts** _Note: In the horizontal part of the above curve the junction temperature T_ J _is lower than T_ J,max _. In the declining slope it is T_ J _= T_ J,max _. P_ tot _has to be reduced according to the curve in order not to exceed T_ J,max _. It is T_ J,max _= T_ S _+ P_ tot _* R_ THJS _._ > 1 For the definition of RthJS please refer to the application note AN077 Datasheet Revision 1.1 2020-10-14 4 **BFP196WN Low noise silicon bipolar RF transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical performance in test fixture** ## **3 Electrical performance in test fixture** ## **3.1 DC parameter table** ## **DC characteristics at TA = 25 °C** |||||||| |---|---|---|---|---|---|---| |**Table 3**<br>**DC characteristics at TA = 25**||**°C**||||| |**Parameter**|**Symbol**|**Values**|||**Unit**|**Note or Test Condition**| |||**Min.**|**Typ.**|**Max.**||| |Collector emitter breakdown voltage|VCEO|12|–|–|V|IC= 1 mA, open base| |Collector emitter leakage current|ICES|–|–|100|μA|VCE= 20 V, VBE= 0 V<br>Emitter / base short<br>circuited| |Collector base leakage current|ICBO|–|–|100|nA|VCB= 10 V, VBE= 0<br>Open emitter| |Emitter base leakage current|IEBO|–|–|1|μA|VEB= 1 V, IC= 0<br>Open collector| |DC current gain|hFE|70|100|140||VCE= 8 V, IC= 50 mA<br>Pulse measured| ## **3.2 AC parameter tables** ## **General AC characteristics at TA = 25 °C** |**Table 4**<br>**General AC characteristics at TA = 25 °C**|**Table 4**<br>**General AC characteristics at TA = 25 °C**|**Table 4**<br>**General AC characteristics at TA = 25 °C**|**Table 4**<br>**General AC characteristics at TA = 25 °C**|**Table 4**<br>**General AC characteristics at TA = 25 °C**|**Table 4**<br>**General AC characteristics at TA = 25 °C**|**Table 4**<br>**General AC characteristics at TA = 25 °C**| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**|||**Unit**|**Note or test condition**| |||**Min.**|**Typ.**|**Max.**||| |Transition frequency|fT|5|7.5|–|GHz|VCE= 8 V, IC= 90 mA,<br>f=500 MHz| |Collector base capacitance|CCB|–|0.9|–|pF|VCB= 10 V, VBE= 0 V,<br>f = 1 MHz<br>Emitter grounded| |Collector emitter capacitance|CCE|–|0.35|–|pF|VCE= 10 V, VBE= 0 V,<br>f = 1 MHz<br>Base grounded| |Emitter base capacitance|CEB|–|3.8|–|pF|VEB= 0.5 V, VCB= 0 V,<br>f = 1 MHz<br>Collector grounded| Datasheet Revision 1.1 2020-10-14 5 **BFP196WN Low noise silicon bipolar RF transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical performance in test fixture** Measurement setup for the AC characteristics shown in the following tables is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C. |RFIN|RFIN|RFIN|4<br>3<br>Bias-T<br>VBE|4<br>3<br>Bias-T<br>VBE|Bias-T<br>GND<br>VCE<br>1<br>2|Bias-T<br>GND<br>VCE<br>1<br>2|Bias-T<br>GND<br>VCE<br>1<br>2|Bias-T<br>GND<br>VCE<br>1<br>2|RFOUT|RFOUT| |---|---|---|---|---|---|---|---|---|---|---| ||||Bias-T|||||||| |||||||||||| |**Figure 2**|**BFP196WN testing circuit**|||||||||| |**Table 5**|**AC characteristics, VCE = 8 V,**||||**f = 0.45 GHz**|||||| |**Parameter**||||**Symbol**|**Values**|||**Unit**||**Note or test condition**| ||||||**Min.**|**Typ.**|**Max.**|||| |**Power gain**<br>Maximum power gain<br>Transducer gain||||Gms<br>|S21|2|–<br>–|23.5<br>19.0|–<br>–|dB||IC= 50 mA<br>Zs= ZSopt, ZL= ZLopt<br>ZS=ZL=50 Ω| |**Minimum noise figure**||||NFmin|–|0.95|–|dB||IC= 20 mA, ZS= ZSopt| |**Linearity**<br>1 dB compression point at output<br>3rd order intercept point at output||||OP1dB<br>OIP3|–<br>–|19<br>32|–<br>–|dBm||IC= 50 mA<br>ZS=ZL=50 Ω| **Table 6** ## **AC characteristics, VCE = 8 V, f = 0.9 GHz** |**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note or test condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |**Power gain**<br>Maximum power gain<br>Transducer gain|Gms<br>|S21|2|–<br>–|17.0<br>13.0|–<br>–|dB|IC= 50 mA<br>Zs= ZSopt, ZL= ZLopt<br>ZS=ZL=50 Ω| |**Minimum noise figure**|NFmin|–|1.1|–|dB|IC= 20 mA, ZS= ZSopt| |**Linearity**<br>1 dB compression point at output<br>3rd order intercept point at output|OP1dB<br>OIP3|–<br>–|19<br>32|–<br>–|dBm|IC= 50 mA<br>ZS=ZL=50 Ω| **Table 7 AC characteristics, VCE = 8 V, f = 1.5 GHz** |**Parameter**|**Symbol**|**Values**|**Values**|**Values**|**Unit**|**Note or test condition**| |---|---|---|---|---|---|---| |||**Min.**|**Typ.**|**Max.**||| |**Power gain**<br>Maximum power gain<br>Transducer gain|Gms<br>|S21|2|–<br>–|12.5<br>8.5|–<br>–|dB|IC= 50 mA<br>Zs= ZSopt, ZL= ZLopt<br>ZS=ZL=50 Ω| Datasheet Revision 1.1 2020-10-14 6 **BFP196WN Low noise silicon bipolar RF transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical performance in test fixture** ## **AC characteristics, VCE = 8 V, f = 1.5 GHz (continued)** |**Table 7**<br>**AC characteristics, VCE = 8 V,**|**Table 7**<br>**AC characteristics, VCE = 8 V,**|**f = 1.5 GHz (continued)**|**f = 1.5 GHz (continued)**|**f = 1.5 GHz (continued)**|**f = 1.5 GHz (continued)**|**f = 1.5 GHz (continued)**| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**|||**Unit**|**Note or test condition**| |||**Min.**|**Typ.**|**Max.**||| |**Minimum noise figure**|NFmin|–|1.7|–|dB|IC= 20 mA, ZS= ZSopt| |**Linearity**<br>1 dB compression point at output<br>3rd order intercept point at output|OP1dB<br>OIP3|–<br>–|19<br>32|–<br>–|dBm|IC= 50 mA<br>ZS=ZL=50 Ω| |**Table 8**<br>**AC characteristics, VCE = 8 V,**|**Table 8**<br>**AC characteristics, VCE = 8 V,**|**f =1.9 GHz**|**f =1.9 GHz**|**f =1.9 GHz**|**f =1.9 GHz**|**f =1.9 GHz**| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**|||**Unit**|**Note or test condition**| |||**Min.**|**Typ.**|**Max.**||| |**Power gain**<br>Maximum power gain<br>Transducer gain|Gms<br>|S21|2|–<br>–|11<br>6.5|–<br>–|dB|IC= 50 mA<br>Zs= ZSopt, ZL= ZLopt<br>ZS=ZL=50 Ω| |**Minimum noise figure**|NFmin|–|2.1|–|dB|IC= 20 mA, ZS= ZSopt| |**Linearity**<br>1 dB compression point at output<br>3rd order intercept point at output|OP1dB<br>OIP3|–<br>–|19<br>32|–<br>–|dBm|IC= 50 mA<br>ZS=ZL=50 Ω| |**Table 9**<br>**AC characteristics, VCE = 5 V,**|**Table 9**<br>**AC characteristics, VCE = 5 V,**|**f = 2.4 GHz**|**f = 2.4 GHz**|**f = 2.4 GHz**|**f = 2.4 GHz**|**f = 2.4 GHz**| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Values**|||**Unit**|**Note or test condition**| |||**Min.**|**Typ.**|**Max.**||| |**Power gain**<br>Maximum power gain<br>Transducer gain|Gms<br>|S21|2|–<br>–|9.7<br>4.8|–<br>–|dB|IC= 50 mA<br>Zs= ZSopt, ZL= ZLopt<br>ZS=ZL=50 Ω| |**Minimum noise figure**|NFmin|–|2.5|–|dB|IC= 20 mA, ZS= ZSopt| |**Linearity**<br>1 dB compression point at output<br>3rd order intercept point at output|OP1dB<br>OIP3|–<br>–|19<br>32|–<br>–|dBm|IC= 50 mA<br>ZS=ZL=50 Ω| Datasheet Revision 1.1 2020-10-14 7 **BFP196WN Low noise silicon bipolar RF transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical performance in test fixture** ## **3.3 Characteristic DC diagrams** **==> picture [357 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>100 I B=853 µA<br>I B=768 µA<br>80 I B=682 µA<br>I B=597 µA<br>60 I B=512 µA<br>I B=427 µA<br>40 I B=341 µA<br>I B=256 µA<br>20 I B=171 µA<br>I B=85 µA<br>0<br>0 2 4 6 8 10<br>V [V]<br>CE<br> [mA]<br>C<br>I<br>**----- End of picture text -----**<br> **Figure 3 Collector current IC = f(VCE), IB = parameter** **==> picture [357 x 278] intentionally omitted <==** **----- Start of picture text -----**<br> 140<br>130<br>120<br>110<br>100<br>90<br>80<br>0 0.02 0.04 0.06 0.08 0.1<br>I [A]<br>C<br> hfe<br>**----- End of picture text -----**<br> **Figure 4 Current gain hFE= f(IC), VCE = 8 V** Datasheet Revision 1.1 2020-10-14 8 **BFP196WN Low noise silicon bipolar RF transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical performance in test fixture** **==> picture [357 x 278] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [-1]<br>10 [-2]<br>10 [-3]<br>10 [-4]<br>10 [-5]<br>10 [-6]<br>10 [-7]<br>0.5 0.55 0.6 0.65 0.7 0.75 0.8<br>V [V]<br>BE<br> [A]<br>C<br>I<br>**----- End of picture text -----**<br> **Figure 5 Collector current IC= f(VBE), VCE = 8 V** **==> picture [357 x 278] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [-3]<br>10 [-4]<br>10 [-5]<br>10 [-6]<br>10 [-7]<br>10 [-8]<br>10 [-9]<br>0.5 0.55 0.6 0.65 0.7 0.75 0.8<br>V [V]<br>BE<br> [A]<br>B<br>I<br>**----- End of picture text -----**<br> **Figure 6 Base current IB = f(VBE), VCE = 8 V** Datasheet Revision 1.1 2020-10-14 9 **BFP196WN Low noise silicon bipolar RF transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical performance in test fixture** **==> picture [357 x 278] intentionally omitted <==** **----- Start of picture text -----**<br> 1.8<br>1.6<br>1.4<br>1.2<br>1<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 2 4 6 8 10 12<br>V [V]<br>CB<br> [pF]<br>CB<br>C<br>**----- End of picture text -----**<br> **Figure 7 Collector-base capacitance** _**C**_ **cb=** _**f**_ **(** _**V**_ **CB),** _**V**_ **CE f= 1MHz** **==> picture [357 x 278] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [-9]<br>10 [-10]<br>10 [-11]<br>10 [-12]<br>10 [-13]<br>10 [-14]<br>0 0.5 1 1.5 2<br>V [V]<br>EB<br> [A]<br>B<br>I<br>**----- End of picture text -----**<br> **Figure 8 Base/emitter leakage current IB = f(VEB), VCE = 8 V** _Note: Regard absolute maximum ratings for I_ C _, V_ CE _and P_ tot _(see_ _**Table 1** )_ Datasheet Revision 1.1 2020-10-14 10 **BFP196WN Low noise silicon bipolar RF transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical performance in test fixture** ## **3.4 Characteristic AC diagrams** **==> picture [357 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>8V<br>7<br>6<br>5V<br>5<br>4<br>4V<br>3V<br>3<br>2V<br>2 1V<br>1<br>0<br>0 20 40 60 80 100 120 140 160 180<br>I [mA]<br>C<br> [GHz]<br>T<br>f<br>**----- End of picture text -----**<br> **Figure 9 Transition frequency fT = f(IC), VCE = parameter** **==> picture [357 x 278] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>25<br>Gms<br>20<br>15<br>10<br>Gma<br>5 |S21| [2]<br>0<br>0 1 2 3 4 5 6 7<br>f [GHz]<br>Gain [dB]<br>**----- End of picture text -----**<br> **Figure 10** **Gain Gms, Gma, IS21I[2] = f(f), IC = 50 mA, VCE = 8 V** Datasheet Revision 1.1 2020-10-14 11 **BFP196WN Low noise silicon bipolar RF transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical performance in test fixture** **==> picture [357 x 278] intentionally omitted <==** **----- Start of picture text -----**<br> 35<br> 0.15GHz<br>30<br>25<br> 0.45GHz<br>20<br> 0.90GHz<br>15<br> 1.50GHz<br> 1.90GHz<br>10 2.40GHz<br> 3.50GHz<br>5<br>0<br>0 20 40 60 80 100<br>I [mA]<br>C<br>Gma [dB]<br>**----- End of picture text -----**<br> **Figure 11 Maximum power gain Gmax = f(IC), VCE = 8 V, f = parameter** **==> picture [357 x 278] intentionally omitted <==** **----- Start of picture text -----**<br> 35<br> 0.15GHz<br>30<br>25<br> 0.45GHz<br>20<br> 0.90GHz<br>15<br> 1.50GHz<br> 1.90GHz<br>10 2.40GHz<br> 3.50GHz<br>5<br>0<br>0 2 4 6 8 10 12 14 16<br>V [V]<br>CE<br>Gma [dB]<br>**----- End of picture text -----**<br> **Figure 12** **Maximum power gain Gmax = f(VCE), IC = 50 mA, f = parameter** Datasheet Revision 1.1 2020-10-14 12 **BFP196WN Low noise silicon bipolar RF transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical performance in test fixture** **==> picture [331 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>1.5<br>0.5 2<br>0.4<br>3<br>0.3<br>4<br>0.2 5<br>0.01 to 6 GHz<br>6.0<br>0.1 5.0 10<br>6.0 4.0<br>0 0.1 0.2 0.3 0.45.0 0. 5 3.0 2.0 1 1.5 2 3 4 5<br>4.0 1.0 0.01<br>3.0<br>2.0 [1.] [0]<br>-0.1 0.01 -10<br>-0.2 -5<br>-4<br>-0.3<br>-3<br>-0.4<br>-0.5 -2<br>20mA<br>-1.5 50mA<br>-1<br>**----- End of picture text -----**<br> **Figure 13 Output reflection coefficient S22 = f(f) at VCE = 8 V, IC = 20, 50 mA** **==> picture [325 x 282] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>1.5<br>0.5 6.0 2<br>5.0<br>6.0<br>0.4 4.0 5.0<br>4 .0 3<br>0.3 3.0<br>3.0 4<br>0.2 2.0 5<br>2.0<br>0.01 to 6 GHz<br>0.1 10<br>1. 0<br>1.0<br>0.1 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5<br>0<br>0.01<br>-0.1 0 .01 -10<br>-0.2 -5<br>-4<br>-0.3<br>-3<br>-0.4<br>-0.5 -2 20mA<br>50mA<br>-1.5<br>-1<br>**----- End of picture text -----**<br> **Figure 14 Input reflection coefficient S11 = f(f) at VCE = 8 V, IC = 20, 50 mA** Datasheet Revision 1.1 2020-10-14 13 **BFP196WN Low noise silicon bipolar RF transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical performance in test fixture** **==> picture [512 x 594] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>1.5<br>0.5 2<br>0.4<br>3<br>0.3<br>4<br>0.2 5<br>0.45 to 2.4 GHz<br>0.1 10<br>0.45<br>0 0.1 0.2 0.450.3 0.4 0.9 0.5 1 1.5 2 3 4 5<br>0.9<br>−0.1 1.5 1.5 −10<br>1.9<br>−0.2 1.9 2.4 −5<br>2.4<br>−4<br>−0.3<br>−3<br>−0.4<br>−0.5 −2<br>20mA<br>−1.5 50mA<br>−1<br>Figure 15 Source impedance for minimum noise figure ZSopt = f(f), VCE = 8 V, IC = 20, 50 mA<br>2.8<br>2.6<br>2.4<br> 50mA<br>2.2<br>2<br> 20mA<br>1.8<br>1.6<br>1.4<br>1.2<br>1<br>0.8<br>0 0.5 1 1.5 2 2.5<br>f [GHz]<br> [dB]<br>min<br>NF<br>**----- End of picture text -----**<br> **Figure 16** **Noise figure NFmin = f(f), VCE = 8 V, IC = 20, 50mA, ZS = ZSopt** Datasheet Revision 1.1 2020-10-14 14 **BFP196WN Low noise silicon bipolar RF transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical performance in test fixture** **==> picture [357 x 278] intentionally omitted <==** **----- Start of picture text -----**<br> 3.5<br>2.4GHz<br>3 1.9GHz<br>2.5 1.5GHz<br>2 0.9GHz<br>0.45GHz<br>1.5<br>1<br>0.5<br>0<br>0 20 40 60 80 100<br>I [mA]<br>C<br> [dB]<br>min<br>NF<br>**----- End of picture text -----**<br> **Figure 17 Noise figure NFmin = f(IC), VCE = 8 V, f = parameter, ZS = ZSopt** **==> picture [357 x 278] intentionally omitted <==** **----- Start of picture text -----**<br> 5.5<br>5<br> 50mA<br>4.5<br>4<br>3.5 20mA<br>3<br>2.5<br>2<br>1.5<br>1<br>0 0.5 1 1.5 2 2.5<br>f [GHz]<br>NF50 [dB]<br>**----- End of picture text -----**<br> **Figure 18** **Noise figure NF50 = f(f), VCE = 8 V, IC = 20, 50 mA, ZS = 50 Ω** Datasheet Revision 1.1 2020-10-14 15 **BFP196WN Low noise silicon bipolar RF transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Electrical performance in test fixture** **==> picture [357 x 278] intentionally omitted <==** **----- Start of picture text -----**<br> 7<br>2.4GHz<br>6<br>1.9GHz<br>5<br>1.5GHz<br>4<br>0.9GHz<br>3 0.45GHz<br>2<br>1<br>0<br>0 20 40 60 80 100<br>I [mA]<br>C<br>NF50 [dB]<br>**----- End of picture text -----**<br> **Figure 19** **Noise figure NF50 = f(IC), VCE = 8 V, f = parameter, ZS = 50 Ω** _Note: The curves shown in this chapter_ _**Characteristic AC diagrams** have been generated using typical devices but shall not be understood as a guarantee that all devices have identical characteristic curves. T_ A _= 25 °C._ Datasheet Revision 1.1 2020-10-14 16 **BFP196WN Low noise silicon bipolar RF transistor** **==> picture [105 x 47] intentionally omitted <==** ## **Package information SOT343** ## **4 Package information SOT343** **==> picture [169 x 201] intentionally omitted <==** **----- Start of picture text -----**<br> 1.25±0.1<br>A<br>0.1 MIN. 0.1<br>2.1±0.1<br>0.2 A<br>±0.1<br>0.9<br>+0.10 -0.05 MAX.<br>0.15 0.1<br>0.1<br>0.15 3x<br>3 2<br>0.1<br>±0.2<br>2 1.3<br>4 1<br>+0.10 -0.05 +0.10 -0.05<br>0.6 0.3<br>**----- End of picture text -----**<br> MOLD FLASH, PROTRUSION OR GATE BURRS OF 0.2 MM MAXIMUM PER SIDE ARE NOT INCLUDED ALL DIMENSIONS ARE IN UNITS MM THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [ ] ## **Figure 20 SOT343 package** _Note: For package information including footprint, packing and assembly recommendation refer to:_ ## _**https://www.infineon.com/cms/en/product/packages/PG-SOT343/PG-SOT343-4-1**_ ## **Revision history** Major changes since previous revision |**Reference**|**Description**| |---|---| |Revision History: 2016-12-21, Revision 0.9|| |rev 0.9|Preliminary datasheet| |rev 1.1|final datasheet, correction of marking and version, additional capacitance curve, new<br>frontpage| Datasheet Revision 1.1 2020-10-14 17 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2020-10-14 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”) . **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2020 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-kst1478698311373** Infineon Technologies in customer’s applications. ## **WARNINGS** Due to technical requirements products may contain dangerous substances. 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Updated at April 21, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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