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BDT65CX
Bipolar (BJT) Single Transistor, Darlington, NPN, 120 V, 12 A, 125 W, TO-220, Through Hole
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- Manufacturer: TT ELECTRONICS / SEMELAB
- Product type: Single Bipolar Junction Transistors - BJT
- No. of Pins: 3Pins
- Power Dissipation: 125W
- DC Current Gain hFE: 1000hFE
- Transistor Mounting: Through Hole
- Transistor Polarity: NPN
- Transistor Case Style: TO-220
- DC Current Gain hFE Min: 1000hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 12A
- Collector Emitter Voltage Max: 120V
| Delivery and price | |
|---|---|
| Units per pack | 900 |
| Price | 2.84 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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## BDT65; 65A BDT65B; 65C
## SILICON DARLINGTON POWER TRANSISTORS
N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220 plastic envelope. P-N-P complements are BDT64; BOT64A; BDT648 and BDT64C.
## QUICK REFERENCE DATA
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EEE<br>BOT6S | 654 | 658 | 65¢<br>Collector-base voltage (open emitter} VCBO max. 60 80 100 120 V<br>Collector-emitter voltage (open base) VCEO max. 60 80 | 100 | 120 Vv<br>Emitter-base voltage (open collector) VERO max. 5 5 | 5 | 5¥V<br>Collector current (peak value} lem max. 20 A<br>Total power dissipation up to Tmb = 25 °C Prot max. 125 W<br>Junction temperature Tj max. 150 ¢<br>D.C. current gain<br>Ic=SA;Vee=4V hee > 1000<br>eee<br>MECHANICAL DATA Dimensions in mm<br>Fig. 1 TO-220A8. lt mex | “ eee<br>Collector connected ! ~~ 36 ; 1,3 ~] a | '<br>to mounting base. Be ——!<br>rN ae H ; 59<br>VL 4 4 min<br>a 4 15.8<br>!I | |i r max<br>1 [fas] t--;--4 4 |<br>not3,5 tinnedmax Hal i as r| | _<br>‘3 a - t 12,7<br>mox ‘frit<br>(2x) j<br>bj] efi) @<br>od| ol|-0s max (3x) | +i 0,6<br>2,54 2,54=~ - ~—724<br>**----- End of picture text -----**<br>
BDT65; 65A
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Fig<br>rN.<br>agellgty<br>**----- End of picture text -----**<br>
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|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|CHARACTERISTICS|
|Tj|=|25|°C,|unless otherwise specified|
|Collector|cut-off|current|
|Vos|= VcBOmax’|le|=|0|ICBO|S|0,4|mA|
|Vee|= 4Vcpomax:|!e|=|0;|Tj|=|150 °C|lcgo|<|2|mA|
|lp|=|0; Vee|= 4VcEOmax|ICEO|<|T|mA|
|Emitter|cut-off|current|
|lc=O;Vepa5V|lego|<=|5|mA|
|D.C.|current|gain*|
|le=|1A;Vce=4V|hrE|typ.|1500|
|lc=|5A;|Vce=4V¥|hee|>|1000|
|Ic=12A;Vcp=4V|hre|typ.|1000|
|Base-emitter|voltage|
|Ic=|SA;Vce=4V|VBE|<=|2.5|Vv|
|Collector-emitter|saturation|valtage*|
|lc|=|10A;|lp|=100mA|VcEsat|=|3V|
|Diode,|forward|voltage|
|Ip=|5A|Ve|<|2|
|lp =12A|VE|typ.|2V|
|Collector|capacitance|at|f|=|1|MHz|
|Veg|=10V;le=!,=0|Ch|typ.|200|pF|
|Second-breakdown|collector|current|
|non-repetitive;|without|heatsink|
|Voce|= 60|V;t,|=0,1s|Isp|>|24|
|Turn-off|breakdown|energy|with|inductive|joad:|
|—lBotf|=|9;|lem|=6,3|A|
|L=5|mH|(see|Fig.|3)|Eigse}|>|100|mJ|
|Switching|times|(see|Figs 4|and|5)|
|ICon|=|5|A;|!Bon|=|—lBoft|=|20 mA|
|turn-on|.|typ.|1|ps|
|mt|time|tan|<|2,5|us|
|turn-off|time:|toff|2typ.|6,010|usus|
|small-signal|current|gain|
|Ic=5A; Vee =3V;f=1MHz|lhgal|typ.|20|
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* Measured under pulse conditions tp = 300 us; 6 < 2%,
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BDT65B; 65C
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t |i<br>' !<br>"<br>{_ R1 R2 ]<br>“°°~° °° | -<br>@<br>**----- End of picture text -----**<br>
Fig. 2 Circuit diagram. R1 typ. 5k; R2 typ. 80 2.
## RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
||||BDOT65|| 654 | 65B|| 654 | 65B|| 654 | 65B|||65C||
|---|---|---|---|---|---|---|---|---|---|
|Collector-basevoltage (open emitter)<br>Collector-emitter voltage(open base)<br>Emitter-base voltage (open collector)|VcBO<br>VCEQ<br>VeEBQ|max.<br>max.<br>max.|60<br>60<br>5||<br>||80<br>ao<br>5|| 100<br>| 100<br>|<br>5||<br>| <br>| <br>||120 <br> 120 <br>5|V<br> V<br> OV|
|Collector current (d.c.)|lc|max.||||12|||A|
|Vollector current (peak value)|lon|max.||||20|||A|
|Base current {d.c.}|Ip|max.||||500|||mA|
|Total power dissipation up toTmp = 25°C|Prot|max.||||125|||W|
|Storage temperature|Tste||—65 to +|||150|||oC|
|Junction temperature|qj|max.||||150|||oC|
|THERMAL RESISTANCE||||||||||
|Fromjunctiontomountingbase|Rthj-mb|=||||1|||KW|
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BDT65; 65A<br>BDT65B; 65C<br>**----- End of picture text -----**<br>
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S mH<br>vert.<br>oscilloscope<br>| 010 Vee7<br>ate<br>Ving Re (\\- r Fig. 3 Test circuit for turn-off<br>a | | | -— \hy Tus hor. breakdownVim = 12 V; energy.Rg =2709;<br>I<br>“ter | oscilloscope th = 1 ms; é = 1%.<br>sa TETIOGS 1<br>tr Torte ght<br>i<br>soy So peat — lace :<br>ig (9) | i<br>10 === = |<br>| | | t<br>i<br>| |<br>| ~~ “hott<br>| |<br>i —— Icon<br>Wroccp frat<br>| | |<br>iof4olvy| | | 1 | Fig. 4 Switching times waveforms.<br>0<br>=| la j —eltye- ot<br>Lon | tort ta<br>Yee<br>Vec = dV<br>. Vim = 16¥V .<br>R4 —Vep= 4V<br>Ri = 569<br>R2 =4100<br>Vinge:<br>mM iid R3 =5602<br>| | | | Re R4 = 62<br>| t tp = 10 ys<br>pee Ri RB Z T =500ps<br>—_—_7>—_<br>Fig. 5 Switching times test circuit.<br>g Ves<br>**----- End of picture text -----**<br>
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## BDT65; 65A BDT65B; 65C
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Fig. 6 Safe Operating ARea; Typ = 25 OC. | Region of permissible d.c. operation, Il Permissible extension for repetitive pulse operation.
(2) Second-breakdown limits (independent of temperature).
Li <8 ge 58
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> BDT65; 65A BDT65B; 65C
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Updated at February 9, 2023
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